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Probing Berry curvature in magnetic topological insulators through resonant infrared magnetic circular dichroism
Authors:
Seul-Ki Bac,
Florian le Mardelé,
Jiashu Wang,
Mykhaylo Ozerov,
Kota Yoshimura,
Ivan Mohelský,
Xingdan Sun,
Benjamin Piot,
Stefan Wimmer,
Andreas Ney,
Tatyana Orlova,
Maksym Zhukovskyi,
Günther Bauer,
Gunther Springholz,
Xinyu Liu,
Milan Orlita,
Kyungwha Park,
Yi-Ting Hsu,
Badih A. Assaf
Abstract:
Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can ide…
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Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can identify the bands and momenta responsible for the underlying Berry Curvature (BC). Detecting BC through MCD faces two challenges: First, the relevant inter-band transitions usually generate MCD in the infrared (IR) range, requiring large samples with high quality. Second, while most magnetic materials are metallic, the relation between MCD and BC in metals remains unclear. Here, we report the observation of MCD in the IR range along with the anomalous Hall effect in thin film MnBi2Te4. Both phenomena emerge with a field-driven phase transition from an antiferromagnet to a canted ferromagnet. By theoretically relating the MCD to the anomalous Hall effect via BC in a metal, we show that this transition accompanies an abrupt onset of BC, signaling a topological phase transition from a topological insulator to a doped Chern insulator. Our density functional theory calculation suggests the MCD signal mainly originates from an optical transition at the Brillouin zone edge, hinting at a potential new source of BC away from the commonly considered Γ point. Our findings demonstrate a novel experimental approach for detecting BC and identifying the responsible bands and momenta, generally applicable to magnetic materials.
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Submitted 24 May, 2024;
originally announced May 2024.
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MBE growth of axion insulator candidate EuIn2As2
Authors:
Muhsin Abdul Karim,
Jiashu Wang,
David Graf,
Kota Yoshimura,
Sara Bey,
Tatyana Orlova,
Maksym Zhukovskyi,
Xinyu Liu,
Badih A. Assaf
Abstract:
The synthesis of thin films of magnetic topological materials is necessary to achieve novel quantized Hall effects and electrodynamic responses. EuIn2As2 is a recently predicted topological axion insulator that has an antiferromagnetic ground state and an inverted band structure, but that has only been synthesized and studied as a single crystal. We report on the synthesis of c-axis oriented EuIn2…
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The synthesis of thin films of magnetic topological materials is necessary to achieve novel quantized Hall effects and electrodynamic responses. EuIn2As2 is a recently predicted topological axion insulator that has an antiferromagnetic ground state and an inverted band structure, but that has only been synthesized and studied as a single crystal. We report on the synthesis of c-axis oriented EuIn2As2 films on sapphire substrates by molecular beam epitaxy. By carefully tuning the substrate temperature during growth, we stabilize the Zintl phase of EuIn2As2 expected to be topologically non-trivial. The magnetic properties of these films reproduce those seen in single crystals, but their resistivity is enhanced when grown at lower temperatures. We additionally find that the magnetoresistance of EuIn2As2 is negative even up to fields as high as 31T. while it is highly anisotropic at low fields, it becomes nearly isotropic at high magnetic fields above 5T. Overall, the transport characteristics of EuIn2As2 appear similar to those of chalcogenide topological insulators, motivating the development of devices to gate tune the Fermi energy and reveal topological features in quantum transport.
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Submitted 13 September, 2023; v1 submitted 17 July, 2023;
originally announced July 2023.
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Discovery of a high-temperature antiferromagnetic state and transport signatures of exchange interactions in a Bi2Se3/EuSe heterostructure
Authors:
Ying Wang,
Valeria Lauter,
Olga Maximova,
Shiva T. Konakanchi,
Pramey Upadhyaya,
Jong Keum,
Haile Ambaye,
Jiashu Wang,
Maksym Zhukovskyi,
Tatyana A. Orlova,
Badih A. Assaf,
Xinyu Liu,
Leonid P. Rokhinson
Abstract:
Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSS has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lifts th…
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Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSS has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lifts the time-reversal symmetry. Here we report an experimental evidence of exchange interaction between a topological insulator Bi2Se3 and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of SQUID magnetometry and Hall measurements points to the formation of an antiferromagnetic layer with at least five-fold enhancement of Néel's temperature. Abrupt resistance changes in high magnetic fields indicate interfacial exchange coupling that affects transport in a TSS. High temperature local control of TSS with zero net magnetization unlocks new opportunities for the design of electronic, spintronic and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits.
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Submitted 2 November, 2022;
originally announced November 2022.
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Energy gap of topological surface states in proximity to a magnetic insulator
Authors:
Jiashu Wang,
Tianyi Wang,
Mykhaylo Ozerov,
Zhan Zhang,
Joaquin Bermejo-Ortiz,
Seul-Ki Bac,
Hoai Trinh,
Maksym Zhukovskyi,
Tatyana Orlova,
Haile Ambaye,
Jong Keum,
Louis-Anne de Vaulchier,
Yves Guldner,
Dmitry Smirnov,
Valeria Lauter,
Xinyu Liu,
Badih A. Assaf
Abstract:
Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topolo…
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Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.
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Submitted 13 September, 2023; v1 submitted 15 July, 2022;
originally announced July 2022.
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When bubbles are not spherical: artificial intelligence analysis of ultrasonic cavitation bubbles in solutions of varying concentrations
Authors:
Ilya Korolev,
Timur Aliev,
Tetiana Orlova,
Sviatlana A. Ulasevich,
Michael Nosonovsky,
Ekaterina V. Skorb
Abstract:
Ultrasonic irradiation of liquids, such as water-alcohol solutions, results in cavitation or the formation of small bubbles. Cavitation bubbles are generated in real solutions without the use of optical traps making our system as close to real conditions as possible. Under the action of the ultrasound, bubbles can grow, oscillate, and eventually, they collapse or decompose. We apply the mathematic…
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Ultrasonic irradiation of liquids, such as water-alcohol solutions, results in cavitation or the formation of small bubbles. Cavitation bubbles are generated in real solutions without the use of optical traps making our system as close to real conditions as possible. Under the action of the ultrasound, bubbles can grow, oscillate, and eventually, they collapse or decompose. We apply the mathematical method of separation of motions to interpret the acoustic effect on the bubbles. While in most situations, the spherical shape of a bubble is the most energetically profitable as it minimizes the surface energy, when the acoustic frequency is in resonance with the natural frequency of the bubble, shapes with the dihedral symmetry emerge. Some of these resonance shapes turn unstable, so the bubble decomposes. It turns out that bubbles in the solutions of different concentrations (with different surface energies and densities) attain different evolution paths. While it is difficult to obtain a deterministic description of how the solution concentration affects bubble dynamics, it is possible to separate images with different concentrations by applying the Artificial Neural Network (ANN) algorithm. An ANN was trained to detect the concentration of alcohol in a water solution based on the bubble images. This indicates that Artificial Intelligence (AI) methods can complement deterministic analysis in non-equilibrium, near-unstable situations.
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Submitted 4 January, 2022; v1 submitted 30 December, 2021;
originally announced December 2021.
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Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films
Authors:
Jiashu Wang,
William Powers,
Zhan Zhang,
Michael Smith,
Bradlee J. McIntosh,
Seul-Ki Bac,
Logan Riney,
Maksym Zhukovskyi,
Tatyana Orlova,
Leonid P. Rokhinson,
Yi-Ting Hsu,
Xinyu Liu,
Badih A. Assaf
Abstract:
Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and supercond…
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Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and superconducting fluctuations above the critical temperature Tc. An analysis of the normal state magnetoresistance reveals these effects. Weak localization is consistently observed in superconducting samples, indicating that superconductivity originates dominantly from trivial valence band states that may be strongly spin-orbit split. A large enhancement of the conductivity is observed above Tc, indicating that quantum coherent quasiparticle effects coexist with superconducting fluctuations. Our results motivate a re-examination of the debated pairing symmetry of this material when subjected to quantum confinement and lattice strain.
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Submitted 2 December, 2021;
originally announced December 2021.
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Fermi level tuning and band alignment in Mn doped InAs/GaSb
Authors:
Logan Riney,
Joaquin Bermejo-Ortiz,
Gauthier Krizman,
Seul-Ki Bac,
Jiashu Wang,
Maksym Zhukovskyi,
Tatyana Orlova,
Louis Anne de Vaulchier,
Yves Guldner,
Roland Winkler,
Jacek K. Furdyna,
Xinyu Liu,
Badih A. Assaf
Abstract:
InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band ali…
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InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.
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Submitted 29 November, 2021;
originally announced November 2021.
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Structural heterogeneity: a topological characteristic to track the time evolution of soft matter systems
Authors:
Ingrid Membrillo Solis,
Tetiana Orlova,
Karolina Bednarska,
Piotr Lesiak,
Tomasz R. Woliński,
Giampaolo D'Alessandro,
Jacek Brodzki,
Malgosia Kaczmarek
Abstract:
We introduce structural heterogeneity, a new topological characteristic for semi-ordered materials that captures their degree of organisation at a mesoscopic level and tracks their time-evolution, ultimately detecting the order-disorder transition at the microscopic scale. Such quantitative characterisation of a complex, soft matter system has not yet been achieved with any other method. We show t…
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We introduce structural heterogeneity, a new topological characteristic for semi-ordered materials that captures their degree of organisation at a mesoscopic level and tracks their time-evolution, ultimately detecting the order-disorder transition at the microscopic scale. Such quantitative characterisation of a complex, soft matter system has not yet been achieved with any other method. We show that structural heterogeneity can track structural changes in a liquid crystal nanocomposite, reveal the effect of confined geometry on the nematic-isotropic and isotropic-nematic phase transitions, and uncover physical differences between these two processes. The system used in this work is representative of a class of composite nanomaterials, partially ordered and with complex structural and physical behaviour, where their precise characterisation poses significant challenges. Our newly developed analytic framework can provide both a qualitative and a quantitative characterisations of the dynamical behaviour of a wide range of semi-ordered soft matter systems.
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Submitted 24 June, 2021;
originally announced June 2021.
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Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations
Authors:
Ying Wang,
Xinyu Liu,
Seul-Ki Bac,
Jacek K. Furdyna,
Badih A. Assaf,
Maksym Zhukovskyi,
Tatyana Orlova,
Neil R Dilley,
Leonid P. Rokhinson
Abstract:
We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements re…
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We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.
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Submitted 17 June, 2021;
originally announced June 2021.
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Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting
Authors:
S. -K. Bac,
K. Koller,
F. Lux,
J. Wang,
L. Riney,
K. Borisiak,
W. Powers,
M. Zhukovskyi,
T. Orlova,
M. Dobrowolska,
J. K. Furdyna,
N. R. Dilley,
L. P. Rokhinson,
Y. Mokrousov,
R. J. McQueeney,
O. Heinonen,
X. Liu,
B. A. Assaf
Abstract:
Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecul…
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Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.
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Submitted 20 April, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells
Authors:
Jiashu Wang,
X. Liu,
C. Bunker,
L. Riney,
B. Qing,
S. K. Bac,
M. Zhukovskyi,
T. Orlova,
S. Rouvimov,
M. Dobrowolska,
J. K. Furdyna,
B. A. Assaf
Abstract:
We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and b…
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We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and become comparable to the magnetic length. In this transport regime, the Hikami-Larkin-Nagaoka model is no longer valid. We employ the model of Wittmann and Schmid to extract the coherence time from the magnetoresistance. We find that despite our improved transport characteristics, the coherence time may be limited by scattering channels that are not strongly carrier dependent, such as electron-phonon or defect scattering.
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Submitted 5 October, 2020;
originally announced October 2020.
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Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Authors:
Priti Gupta,
A. A. Rahman,
Shruti Subramanian,
Shalini Gupta,
Arumugam Thamizhavel,
Tatyana Orlova,
Sergei Rouvimov,
Suresh Vishwanath,
Vladimir Protasenko,
Masihhur R. Laskar,
Huili Grace Xing,
Debdeep Jena,
Arnab Bhattacharya
Abstract:
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfo…
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Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS$_2$ and MoS$_2$ by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area epitaxial growth of GaN on CVD MoS$_2$. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.
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Submitted 28 September, 2015;
originally announced September 2015.
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Light-induced pitch transitions in photosensitive cholesteric liquid crystals: Effects of anchoring energy
Authors:
Tetiana N. Orlova,
Roman I. Iegorov,
Alexei D. Kiselev
Abstract:
We experimentally study how the cholesteric pitch, $P$, depends on the equilibrium one, $P_0$, in planar liquid crystal (LC) cells with both strong and semistrong anchoring conditions. The cholesteric phase was induced by dissolution in the nematic LC the right-handed chiral dopant 7-DHC (7-dehydrocholesterol, provitamin $D_3$) which transforms to left-handed tachysterol under the action of UV irr…
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We experimentally study how the cholesteric pitch, $P$, depends on the equilibrium one, $P_0$, in planar liquid crystal (LC) cells with both strong and semistrong anchoring conditions. The cholesteric phase was induced by dissolution in the nematic LC the right-handed chiral dopant 7-DHC (7-dehydrocholesterol, provitamin $D_3$) which transforms to left-handed tachysterol under the action of UV irradiation at the wavelength of 254 nm. By using the model of photoreaction kinetics we obtain dependencies of isomers concentrations and thus the equilibrium pitch on UV irradiation dose. The cholesteric pitch was measured as a function of irradiation time using the polarimetry method. In this method, the pitch is estimated from the experimental data on the irradiation time dependence of the ellipticity of light transmitted through the LC cells. It is found that the resulting dependence of the twist parameter, $2 D/P$ ($D$ is the cell thickness), on the free twisting number parameter, $2 D/P_0$, shows the jump-like behaviour and agrees well with the known theoretical results for the anchoring potential of the Rapini-Papoular form.
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Submitted 11 January, 2014; v1 submitted 15 October, 2013;
originally announced October 2013.