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Valley-Polarized quantum Hall phase in a strain-controlled Dirac system
Authors:
G. Krizman,
J. Bermejo-Ortiz,
T. Zakusylo,
M. Hajlaoui,
T. Takashiro,
M. Rosmus,
N. Olszowska,
J. J. Kolodziej,
G. Bauer,
Y. Guldner,
G. Springholz,
L. -A. de Vaulchier
Abstract:
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band g…
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In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band gap, we observe a bipolar QH phase, heralded by the coexistence of hole and electron chiral edge states at distinct valleys in the same quantum well. This suggests that spatially overlaid counter-propagating chiral edge states emerging at different valleys do not interfere with each other.
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Submitted 4 January, 2024;
originally announced January 2024.
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3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
Authors:
Jakub Polaczyński,
Gauthier Krizman,
Alexandr Kazakov,
Bartłomiej Turowski,
Joaquín Bermejo Ortiz,
Rafał Rudniewski,
Tomasz Wojciechowski,
Piotr Dłużewski,
Marta Aleszkiewicz,
Wojciech Zaleszczyk,
Bogusława Kurowska,
Zahir Muhammad,
Marcin Rosmus,
Natalia Olszowska,
Louis-Anne De Vaulchier,
Yves Guldner,
Tomasz Wojtowicz,
Valentine V. Volobuev
Abstract:
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α…
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$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
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Submitted 13 June, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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Enhanced Dirac node separation in strained Cd3As2 topological semimetal
Authors:
Gauthier Krizman,
Joaquin Bermejo-Ortiz,
Manik Goyal,
Alexander C. Lygo,
Jiashu Wang,
Zhan Zhang,
Badih A. Assaf,
Susanne Stemmer,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasi-relativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination…
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In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasi-relativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination of magnetooptical infrared spectroscopy and high-resolution X-ray diffraction studies performed on epitaxial films. In these thin films, we observe a giant enhancement of the node separation in momentum space by close to a factor of 4. A combination of experimental measurements and theoretical modelling allows relate the origin of this enhancement to a strengthening of the topological band inversion driven by lattice strain. Our results demonstrate how strain can be used as a knob to tune the topological properties of semimetals and to potentially enhance their performance and response for various applications.
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Submitted 20 September, 2022;
originally announced September 2022.
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Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions
Authors:
J. Bermejo-Ortiz,
G. Krizman,
R. Jakiela,
Z. Khosravizadeh,
M. Hajlaoui,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in solid state, which allows to experimentally probe and explore fundamental relativistic theories. Here we show that on smooth interfaces between a trivial and a topological material, massless Weyl and massive Dirac fermions…
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Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in solid state, which allows to experimentally probe and explore fundamental relativistic theories. Here we show that on smooth interfaces between a trivial and a topological material, massless Weyl and massive Dirac fermions intrinsically coexist. The emergence of the latter, known as Volkov-Pankratov states, is directly revealed by magneto-optical spectroscopy, evidencing that their energy spectrum is perfectly controlled by the smoothness of topological interface. Simultaneously, we reveal the optical absorption of the zero-energy chiral Weyl state, whose wavefunction is drastically transformed when the topological interface is smooth. Artificial engineering of the topology profile thus provides a novel textbook system to explore the rich relativistic energy spectra in condensed matter heterostructures.
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Submitted 19 July, 2022;
originally announced July 2022.
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Energy gap of topological surface states in proximity to a magnetic insulator
Authors:
Jiashu Wang,
Tianyi Wang,
Mykhaylo Ozerov,
Zhan Zhang,
Joaquin Bermejo-Ortiz,
Seul-Ki Bac,
Hoai Trinh,
Maksym Zhukovskyi,
Tatyana Orlova,
Haile Ambaye,
Jong Keum,
Louis-Anne de Vaulchier,
Yves Guldner,
Dmitry Smirnov,
Valeria Lauter,
Xinyu Liu,
Badih A. Assaf
Abstract:
Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topolo…
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Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.
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Submitted 13 September, 2023; v1 submitted 15 July, 2022;
originally announced July 2022.
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Interaction between interface and massive states in multivalley topological heterostructures
Authors:
Gauthier Krizman,
Badih A. Assaf,
Milan Orlita,
Guenther Bauer,
Gunther Springholz,
Robson Ferreira,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau level spectroscopy up to 34 teslas. We characterize the topological interface states emerging from the distinct L-valleys in Pb1-xSnxSe multi quantum wells grown al…
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Topological interface states in multivalley systems are studied to unravel their valley sensitivity. For this purpose, multivalley IV-VI topological crystalline insulator (TCI) heterostructures are explored using magneto-optical Landau level spectroscopy up to 34 teslas. We characterize the topological interface states emerging from the distinct L-valleys in Pb1-xSnxSe multi quantum wells grown along the [111] direction. It is shown that the shape of the 2D Fermi surfaces of topological interface states residing at the TCI/trivial insulator interfaces are strongly affected by the valley anisotropy of topologically trivial Pb1-yEuySe barriers. This phenomenon is shown to be due to the deep penetration of the topological interface states into the barriers. For the valleys tilted with respect to the confinement direction, a significant interaction between topological states and the conventional massive quantum well states is observed, evidenced by the resulting large anti-crossings between Landau levels. These are theoretically well-described by a k.p model that takes into account tilt and anisotropy of the valleys in two dimensions. Therefore, our work provides a precise characterization of the topological interface state valley splitting, as well as an accurate determination of the anisotropy of their Dirac cone dispersion.
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Submitted 11 February, 2022;
originally announced February 2022.
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Fermi level tuning and band alignment in Mn doped InAs/GaSb
Authors:
Logan Riney,
Joaquin Bermejo-Ortiz,
Gauthier Krizman,
Seul-Ki Bac,
Jiashu Wang,
Maksym Zhukovskyi,
Tatyana Orlova,
Louis Anne de Vaulchier,
Yves Guldner,
Roland Winkler,
Jacek K. Furdyna,
Xinyu Liu,
Badih A. Assaf
Abstract:
InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band ali…
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InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.
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Submitted 29 November, 2021;
originally announced November 2021.
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Miniband engineering and topological phase transitions in topological - normal insulator superlattices
Authors:
G. Krizman,
B. A. Assaf,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Periodic stacking of topologically trivial and non-trivial layers with opposite symmetry of the valence and conduction bands induces topological interface states that, in the strong coupling limit, hybridize both across the topological and normal insulator layers. Using band structure engineering, such superlattices can be effectively realized using the IV-VI lead tin chalcogenides. This leads to…
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Periodic stacking of topologically trivial and non-trivial layers with opposite symmetry of the valence and conduction bands induces topological interface states that, in the strong coupling limit, hybridize both across the topological and normal insulator layers. Using band structure engineering, such superlattices can be effectively realized using the IV-VI lead tin chalcogenides. This leads to emergent minibands with a tunable topology as demonstrated both by theory and experiments. The topological minibands are proven by magneto-optical spectroscopy, revealing Landau level transitions both at the center and edges of the artificial superlattice mini Brillouin zone. Their topological character is identified by the topological phase transitions within the minibands observed as a function of temperature. The critical temperature of this transition as well as the miniband gap and miniband width can be precisely controlled by the layer thicknesses and compositions. This witnesses the generation of a new fully tunable quasi-3D topological state that provides a template for realization of magnetic Weyl semimetals and other strongly interacting topological phases.
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Submitted 30 May, 2021;
originally announced May 2021.
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Determination of the crystal field splitting energy in Cd3As2 using magnetooptics
Authors:
G. Krizman,
T. Schumann,
S. Tchoumakov,
B. A. Assaf,
S. Stemmer,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy…
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Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy. By combining angular dependent cyclotron resonance with Landau level spectroscopy measurements in the Faraday geometry, we determine that δ is positive and equal to 15+/-5 meV in Cd3As2. Our results lead to a more accurate knowledge of the details of the band structure of this Dirac semimetal such as the position its Dirac nodes in momentum space and their splitting into Weyl nodes under a magnetic field.
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Submitted 2 October, 2019;
originally announced October 2019.
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Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy
Authors:
G. Krizman,
B. A. Assaf,
T. Phuphachong,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental mapping of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-clo…
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Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental mapping of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-closure of the energy gap is evidenced in the vicinity of this phase transition. Using magnetooptical Landau level spectroscopy, we determine the energy gap, Dirac velocity, anisotropy factor and topological character of Pb1-xSnxSe epilayers grown by molecular beam epitaxy on BaF2 (111). Our results are evidence that Pb1-xSnxSe is a model system to study topological phases and the nature of the phase transition.
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Submitted 24 October, 2018;
originally announced October 2018.
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Avoided level crossing at the magnetic field induced topological phase transition due to spin-orbital mixing
Authors:
G. Krizman,
B. A. Assaf,
M. Orlita,
T. Phuphachong,
G. Bauer,
G. Springholz,
G. Bastard,
R. Ferreira,
L. A. de Vaulchier,
Y. Guldner
Abstract:
In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnet…
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In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnetic field is swept through the critical field. We attribute this anticrossing to orbital parity and spin mixing of the N=0 levels. Concurrently, we observe no gap closure at the topological phase transition versus temperature suggesting that the anticrossing is a generic property of topological phase transitions.
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Submitted 9 August, 2018;
originally announced August 2018.
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Tunable Dirac interface states in topological superlattices
Authors:
G. Krizman,
B. A. Assaf,
T. Phuphachong,
G. Bauer,
G. Springholz,
G. Bastard,
R. Ferreira,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the m…
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Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the massless Dirac states that occur at material surfaces. In this work, we experimentally and theoretically introduce a platform where this hybridization can be continuously tuned: the Pb1-xSnxSe topological superlattice. In this system, topological Dirac states occur at the interfaces between a topological crystalline insulator Pb1-xSnxSe and a trivial insulator, realized in the form of topological quantum wells (TQW) epitaxially stacked on top of each other. Using magnetooptical transmission spectroscopy on high quality MBE grown Pb1-xSnxSe superlattices, we show that the penetration depth of the TQW interface states and therefore their Dirac mass is continuously tunable with temperature. This presents a new pathway to engineer the Dirac mass of topological systems and paves the way towards the realization of emergent quantum states of matter using Pb1-xSnxSe topological superlattices.
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Submitted 9 August, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials
Authors:
B. A. Assaf,
T. Phuphachong,
E. Kampert,
V. V. Volobuev,
P. S. Mandal,
J. Sánchez-Barriga,
O. Rader,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when…
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Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter.
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Submitted 11 August, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
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Magnetooptical determination of a topological index
Authors:
Badih A. Assaf,
Thanyanan Phuphachong,
Valentine V. Volobuev,
Guenther Bauer,
Gunther Springholz,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
When a Dirac fermion system acquires an energy-gap, it is said to have either trivial (positive energy-gap) or non-trivial (negative energy-gap) topology, depending on the parity ordering of its conduction and valence bands. The non-trivial regime is identified by the presence of topological surface or edge-state dispersing in the energy gap of the bulk and is attributed a non-zero topological ind…
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When a Dirac fermion system acquires an energy-gap, it is said to have either trivial (positive energy-gap) or non-trivial (negative energy-gap) topology, depending on the parity ordering of its conduction and valence bands. The non-trivial regime is identified by the presence of topological surface or edge-state dispersing in the energy gap of the bulk and is attributed a non-zero topological index. In this work, we show that such topological indices can be determined experimentally via an accurate measurement of the effective velocity of bulk massive Dirac fermions. We demonstrate this analytically starting from the Bernevig-Hughes-Zhang Hamiltonian (BHZ) to show how the topological index depends on this velocity. We then experimentally extract the topological index in Pb1-xSnxSe and Pb1-xSnxTe using infrared magnetooptical Landau level spectroscopy. This approach is argued to be universal to all material classes that can be described by a BHZ-like model and that host a topological phase transition.
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Submitted 5 April, 2017; v1 submitted 31 August, 2016;
originally announced August 2016.
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Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption
Authors:
B. A. Assaf,
T. Phuphachong,
V. V. Volobuev,
A. Inhofer,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk st…
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Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.
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Submitted 12 January, 2016; v1 submitted 5 October, 2015;
originally announced October 2015.
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Disorder-perturbed Landau levels in high electron mobility epitaxial graphene
Authors:
Simon Maëro,
Abderrezak Torche,
Thanyanan Phuphachong,
Emiliano Pallecchi,
Abdelkarim Ouerghi,
Robson Ferreira,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such…
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We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments.
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Submitted 16 October, 2014;
originally announced October 2014.
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Direct surface cyclotron resonance terahertz emission from a quantum cascade structure
Authors:
François-Régis Jasnot,
Louis-Anne De Vaulchier,
Yves Guldner,
Gérald Bastard,
Angela Vasanelli,
Christophe Manquest,
Carlo Sirtori,
Mattias Beck,
Jérôme Faist
Abstract:
A strong magnetic field applied along the growth direction of a semiconductor quantum well gives rise to a spectrum of discrete energy states, the Landau levels. By combining quantum engineering of a quantum cascade structure with a static magnetic field, we can selectively inject electrons into the excited Landau level of a quantum well and realize a tunable surface emitting device based on cyclo…
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A strong magnetic field applied along the growth direction of a semiconductor quantum well gives rise to a spectrum of discrete energy states, the Landau levels. By combining quantum engineering of a quantum cascade structure with a static magnetic field, we can selectively inject electrons into the excited Landau level of a quantum well and realize a tunable surface emitting device based on cyclotron emission. By applying the appropriate magnetic field between 0 and 12 T, we demonstrate emission from a single device over a wide range of frequencies (1-2 THz and 3-5 THz).
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Submitted 23 March, 2012;
originally announced March 2012.
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Evidence for excitonic polarons in InAs/GaAs quantum dots
Authors:
Vanessa Preisler,
Thomas Grange,
Robson Ferreira,
Louis-Anne De Vaulchier,
Yves Guldner,
Fransisco José Teran,
Marek Potemski,
Aristide Lemaître
Abstract:
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixe…
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We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons.
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Submitted 20 September, 2006;
originally announced September 2006.
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Hole-LO phonon interaction in InAs/GaAs quantum dots
Authors:
Vanessa Preisler,
Robson Ferreira,
Sophie Hameau,
Louis-Anne De Vaulchier,
Yves Guldner,
Marcin L Sadowski,
Aristide Lemaître
Abstract:
We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fröhlich Hamiltonian, from which we determine the polaron states as wel…
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We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the experimental data. We calculate the coupling between the mixed hole LO-phonon states using the Fröhlich Hamiltonian, from which we determine the polaron states as well as the energies and oscillator strengths of the valence intraband transitions. The good agreement between the experiments and calculations provides strong evidence for the existence of hole-polarons and demonstrates that the intraband magneto-optical transitions occur between polaron states.
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Submitted 31 January, 2006;
originally announced January 2006.
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Low temperature penetration depth and the effect of quasi-particle scattering measured by millimeter wave transmission in YBaCuO thin films
Authors:
S. Djordjevic,
L. A. de Vaulchier,
N. Bontemps,
J. P. Vieren,
Y. Guldner,
S. Moffat,
J. Preston,
X. Castel,
M. Guilloux-Viry,
A. Perrin
Abstract:
Measurement of the penetration depth as a function of temperature using millimeter wave transmission in the range 130-500GHz are reported for three YBCO thin films. The experiment provides the absolute value for the penetration depth at low temperature: the derivation from the transmission data and the experimental uncertainty are discussed. We find a zero temperature penetration depth of 199+/-…
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Measurement of the penetration depth as a function of temperature using millimeter wave transmission in the range 130-500GHz are reported for three YBCO thin films. The experiment provides the absolute value for the penetration depth at low temperature: the derivation from the transmission data and the experimental uncertainty are discussed. We find a zero temperature penetration depth of 199+/-20nm, 218+/-20nm and 218+/-20nm, for YBCO-50nm/LaAlO3 (pristine), YBCO-130nm/MgO and YBCO-50nm/LaAlO3 (irradiated) respectively. The penetration depth exhibits a different behavior for the three films. In the pristine sample, it shows a clear temperature and frequency dependence, namely the temperature dependence is consistent with a linear variation, whose slope decreases with frequency: this is considered as an evidence for the scattering rate being of the order of the measuring frequency. A two fluids analysis yields 1.7 10^{12} s^{-1}. In the two other samples, the penetration depth does not display any frequency dependence, suggesting a significantly larger scattering rate. The temperature dependence is different in these latter samples. It is consistent with a linear variation for the YBCO/MgO sample, not for the YBCO/LaAlO3 irradiated one, which exhibits a T^2 dependence up to 40K. We have compared our data to the predictions of the d-wave model incorporating resonant scattering and we do not find a satisfactory agreement. However, the large value of the penetration depth at zero Kelvin in the pristine sample is a puzzle and sheds some doubt on a straightforward comparison with the theory of data from thin films, considered as dirty d-wave superconductors.
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Submitted 23 January, 1998;
originally announced January 1998.
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Linear Temperature Variation of the Penetration Depth in YBCO Thin Films
Authors:
L. A. de Vaulchier,
J. P. Vieren,
Y. Guldner,
N. Bontemps,
R. Combescot,
Y. Lemaitre,
J. C. Mage
Abstract:
We have measured the penetration depth $λ(T)$ on $\rm YBa_{2}Cu_{3}O_{7}$ thin films from transmission at 120, 330 and 510~GHz, between 5 and 50~K. Our data yield simultaneously the absolute value and the temperature dependence of $λ(T)$. In high quality films $λ(T)$ exhibits the same linear temperature dependence as single crystals, showing its intrinsic nature, and $λ(0)=1750\,{\rm Å}$. In a l…
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We have measured the penetration depth $λ(T)$ on $\rm YBa_{2}Cu_{3}O_{7}$ thin films from transmission at 120, 330 and 510~GHz, between 5 and 50~K. Our data yield simultaneously the absolute value and the temperature dependence of $λ(T)$. In high quality films $λ(T)$ exhibits the same linear temperature dependence as single crystals, showing its intrinsic nature, and $λ(0)=1750\,{\rm Å}$. In a lower quality one, the more usual $T^2$ dependence is found, and $λ(0)=3600\,{\rm Å}$. This suggests that the $T^2$ variation is of extrinsic origin. Our results put the $d$-wave like interpretation in a much better position.
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Submitted 14 April, 1995;
originally announced April 1995.
