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Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures
Authors:
T. Schumann,
T. Kleinke,
L. Braun,
N. Meyer,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
E. Schmoranzerova,
K. Olejník,
H. Reichlová,
C. Heiliger,
C. Denker,
J. Walowski,
T. Kampfrath,
M. Münzenberg
Abstract:
We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiment…
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We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.
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Submitted 3 February, 2022;
originally announced February 2022.
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Topological surface states in strained Dirac semimetal thin films
Authors:
Pablo Villar Arribi,
Jian-Xin Zhu,
Timo Schumann,
Susanne Stemmer,
Anton A. Burkov,
Olle Heinonen
Abstract:
We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd$_3$A$_2$ as a model system, and include perturbations that break the $C_4$ symmetry and inversion symmetry. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. The Fermi arc states persist down…
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We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd$_3$A$_2$ as a model system, and include perturbations that break the $C_4$ symmetry and inversion symmetry. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. The Fermi arc states persist down to very thin films, thinner than presently measured experimentally, but are affected by breaking the symmetry of the Hamiltonian. Our findings are compatible with experimental observations of transport in Cd$_3$As$_2$, and also suggest that symmetry-breaking terms that preserve the Fermi arc states nevertheless can have a profound effect in the thin film limit.
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Submitted 17 June, 2020;
originally announced June 2020.
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Possible signatures of mixed-parity superconductivity in doped polar SrTiO3 films
Authors:
Timo Schumann,
Luca Galletti,
Hanbyeol Jeong,
Kaveh Ahadi,
William M. Strickland,
Salva Salmani-Rezaie,
Susanne Stemmer
Abstract:
Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to b…
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Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to becoming superconducting. We show that some films show signatures of an unusual superconducting state, such as an in-plane critical field that is higher than both the paramagnetic and orbital pair breaking limits. Moreover, nonreciprocal transport, which reflects the ratio of odd versus even pairing interactions, is observed. Together, these characteristics indicate that these films provide a tunable platform for investigations of unconventional superconductivity.
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Submitted 23 March, 2020;
originally announced March 2020.
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Probing charge pumping and relaxation of the chiral anomaly in a Dirac semimetal
Authors:
Bing Cheng,
Timo Schumann,
Susanne Stemmer,
N. P. Armitage
Abstract:
The linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or anti-parallel locking of electron spin to its momentum. Such materials are believed to exhibit a ${\bf E} \cdot {\bf B}$ chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial Cd$_3$As$_2$ f…
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The linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or anti-parallel locking of electron spin to its momentum. Such materials are believed to exhibit a ${\bf E} \cdot {\bf B}$ chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial Cd$_3$As$_2$ films and extract their conductivities $σ(ω)$ as a function of ${\bf E} \cdot {\bf B}$. As field is applied, we observe a remarkably sharp Drude response that rises out of the broader background. Its appearance is a definitive signature of a new transport channel and consistent with the chiral response, with its spectral weight a measure of the net chiral charge and width a measure of the scattering rate between chiral species. The field independence of the chiral relaxation establishes that it is set by the approximate conservation of the isospin that labels the crystalline point-group representations.
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Submitted 31 May, 2021; v1 submitted 30 October, 2019;
originally announced October 2019.
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Determination of the crystal field splitting energy in Cd3As2 using magnetooptics
Authors:
G. Krizman,
T. Schumann,
S. Tchoumakov,
B. A. Assaf,
S. Stemmer,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy…
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Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy. By combining angular dependent cyclotron resonance with Landau level spectroscopy measurements in the Faraday geometry, we determine that δ is positive and equal to 15+/-5 meV in Cd3As2. Our results lead to a more accurate knowledge of the details of the band structure of this Dirac semimetal such as the position its Dirac nodes in momentum space and their splitting into Weyl nodes under a magnetic field.
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Submitted 2 October, 2019;
originally announced October 2019.
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Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal Cd3As2
Authors:
Bing Cheng,
Natsuki Kanda,
Tatsuhiko N. Ikeda,
Takuya Matsuda,
Peiyu Xia,
Timo Schumann,
Susanne Stemmer,
Jiro Itatani,
N. P. Armitage,
Ryusuke Matsunaga
Abstract:
We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahe…
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We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahertz spectroscopy and calculations also clarify the microscopic mechanism of the nonlinearity originating in the coherent acceleration of Dirac electrons in momentum space. Our results provide clear insights for nonlinear current of Dirac electrons driven by terahertz field under an influence of scattering, paving the way toward novel devices for high-speed electronics and photonics based on topological semimetals.
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Submitted 24 March, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction
Authors:
Honggyu Kim,
Manik Goyal,
Salva Salmani-Rezaie,
Timo Schumann,
Tyler N. Pardue,
Jian-Min Zuo,
Susanne Stemmer
Abstract:
Cadmium arsenide (Cd3As2) is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room temperature crystal structures of Cd3As2 reported differ subtly in the way the Cd vacancies are arranged within its antifluorite-derived structure, which determines if an inversion center is present and if Cd3As2 is a Dirac or Weyl semimetal. He…
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Cadmium arsenide (Cd3As2) is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room temperature crystal structures of Cd3As2 reported differ subtly in the way the Cd vacancies are arranged within its antifluorite-derived structure, which determines if an inversion center is present and if Cd3As2 is a Dirac or Weyl semimetal. Here, we apply convergent beam electron diffraction (CBED) to determine the point group of Cd3As2 thin films grown by molecular beam epitaxy. Using CBED patterns from multiple zone axes, high-angle annular dark-field images acquired in scanning transmission electron microscopy, and Bloch wave simulations, we show that Cd3As2 belongs to the tetragonal 4/mmm point group, which is centrosymmetric. The results show that CBED can distinguish very subtle differences in the crystal structure of a topological semimetal, a capability that will be useful for designing materials and thin film heterostructures with topological states that depend on the presence of certain crystal symmetries.
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Submitted 15 August, 2019;
originally announced August 2019.
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Soft phonons and ultralow lattice thermal conductivity in the Dirac semimetal Cd3As2
Authors:
Shengying Yue,
Hamid T. Chorsi,
Manik Goyal,
Timo Schumann,
Runqing Yang,
Tashi Xu,
Bowen Deng,
Susanne Stemmer,
Jon A. Schuller,
Bolin Liao
Abstract:
Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combi…
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Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combine first-principles lattice dynamics calculations and temperature-dependent high-resolution Raman spectroscopy of high-quality single-crystal thin films grown by molecular beam epitaxy to reveal the existence of a group of soft optical phonon modes at the Brillouin zone center of Cd3As2. These soft phonon modes significantly increase the scattering phase space of heat-carrying acoustic phonons and are the origin of the low lattice thermal conductivity of Cd3As2. Furthermore, we show that the interplay between the phonon-phonon Umklapp scattering rates and the soft optical phonon frequency explains the unusual non-monotonic temperature dependence of the lattice thermal conductivity of Cd3As2. Our results further suggest that the soft phonon modes are potentially induced by a Kohn anomaly associated with the Dirac nodes, in analogy to similar, nonetheless weaker, effects in graphene and Weyl semimetals.
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Submitted 10 August, 2019;
originally announced August 2019.
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Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$
Authors:
Hamid T. Chorsi,
Shengying Yue,
Prasad P. Iyer,
Manik Goyal,
Timo Schumann,
Susanne Stemmer,
Bolin Liao,
Jon A. Schuller
Abstract:
In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demons…
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In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas.
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Submitted 28 July, 2019;
originally announced July 2019.
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A Large Effective Phonon Magnetic Moment in a Dirac Semimetal
Authors:
Bing Cheng,
T. Schumann,
Y. C. Wang,
X. S. Zhang,
D. Barbalas,
S. Stemmer,
N. P. Armitage
Abstract:
We investigated the magnetoterahertz response of the Dirac semimetal Cd$_3$As$_2$ and observed a particularly low frequency optical phonon, as well as a very prominent and field sensitive cyclotron resonance. As the cyclotron frequency is tuned with field to pass through the phonon, the phonon become circularly polarized as shown by a notable splitting in their response to right- and left-hand pol…
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We investigated the magnetoterahertz response of the Dirac semimetal Cd$_3$As$_2$ and observed a particularly low frequency optical phonon, as well as a very prominent and field sensitive cyclotron resonance. As the cyclotron frequency is tuned with field to pass through the phonon, the phonon become circularly polarized as shown by a notable splitting in their response to right- and left-hand polarized light. This splitting can be expressed as an effective phonon magnetic moment that is approximately 2.7 times the Bohr magneton, which is almost four orders of magnitude larger than ab initio calculations predict for phonon magnetic moments in nonmagnetic insulators. This exceedingly large value is due to the coupling of the phonons to the cyclotron motion and is controlled directly by the electron-phonon coupling constant. This field tunable circular-polarization selective coupling provides new functionality for nonlinear optics to create light-induced topological phases in Dirac semimetals.
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Submitted 9 July, 2020; v1 submitted 1 May, 2019;
originally announced May 2019.
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Basal-plane growth of cadmium arsenide by molecular beam epitaxy
Authors:
David A. Kealhofer,
Honggyu Kim,
Timo Schumann,
Manik Goyal,
Luca Galletti,
Susanne Stemmer
Abstract:
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surf…
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(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm-thick films is found to be 9300 cm2/Vs at 2 K, comparable to the highest-quality films grown in the conventional (112) orientation. This work demonstrates a simple experimental framework for exploring topological phases that are predicted to exist in proximity to the three-dimensional Dirac semimetal phase.
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Submitted 30 March, 2019;
originally announced April 2019.
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Absence of signatures of Weyl orbits in the thickness dependence of quantum transport in cadmium arsenide
Authors:
Luca Galletti,
Timo Schumann,
David A. Kealhofer,
Manik Goyal,
Susanne Stemmer
Abstract:
In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscil…
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In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscillations and quantum Hall plateaus in (112)-oriented Cd3As2 thin films grown by molecular beam epitaxy. We compare quantum transport in films of varying thickness at apparently identical gate-tuned carrier concentrations and find no clear dependence of the relative phase of the quantum oscillations on the sample thickness. We show that small variations in carrier densities, difficult to detect in low-field Hall measurements, lead to shifts in quantum oscillations that are commensurate with previously reported phase shifts. Future claims of Weyl orbits based on the thickness dependence of quantum transport data require additional studies that demonstrate that these competing effects have been disentangled.
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Submitted 30 March, 2019;
originally announced April 2019.
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Observation of spin Nernst photocurrents in topological insulators
Authors:
T. Schumann,
N. Meyer,
G. Mussler,
J. Kampmeier,
D. Grützmacher,
E. Schmoranzerova,
L. Braun,
T. Kampfrath,
J. Walowski,
M. Münzenberg
Abstract:
The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bu…
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The theoretical prediction of topological insulators in 2007 triggered tremendous interest. They are of fundamental interest because of their topological twist in k-space, which comes along with unidirectional, spin-polarized surface-state currents, required for spin-optoelectronics. This property makes topological insulators on one hand perfect materials for optically generated, ultrafast spin-bunches spin-current sources for the generation of THz radiation. On the other hand, those spin-polarized surface-state currents when generated by a voltage lead to large spin Hall effects, or when generated by a temperature gradient to the thermal analogue, the spin Nernst effect. Both mutually convert charge/ heat currents into transverse spin currents leading to spin accumulations. By connecting both research fields, we show the evidence of heat-transport related spin Hall effects that can be extracted from opto-transport experiments. This heat-driven spin Nernst effect drives a transverse spin-current and affects the optical spin-orientation in the three-dimensional topological insulator. This manifests as a modification of the circular polarization-dependent photocurrent. We illuminate the detailed thermocurrent distribution, including the influence of edges and contacts, in spatially resolved current maps.
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Submitted 30 October, 2018;
originally announced October 2018.
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Two-Dimensional Dirac Fermions in Thin Films of Cd3As2
Authors:
Luca Galletti,
Timo Schumann,
Omor F. Shoron,
Manik Goyal,
David A. Kealhofer,
Honggyu Kim,
Susanne Stemmer
Abstract:
Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neu…
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Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neutrality point and the presence of a zero energy Landau level, all of which indicate topologically non-trivial states. The resistance at the charge neutrality point is approximately h/e2 and increases rapidly under the application of a magnetic field. The results open many possibilities for gate-tunable topological devices and for the exploration of novel physics in the zero energy Landau level.
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Submitted 26 February, 2018;
originally announced February 2018.
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Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
Authors:
Timo Schumann,
Luca Galletti,
David A. Kealhofer,
Honggyu Kim,
Manik Goyal,
Susanne Stemmer
Abstract:
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall e…
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The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.
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Submitted 21 November, 2017;
originally announced November 2017.
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Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2
Authors:
Timo Schumann,
Manik Goyal,
David A. Kealhofer,
Susanne Stemmer
Abstract:
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative l…
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Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd3As2, a three-dimensional Dirac semimetal. Quasi-linear positive transverse magnetoresistance and negative longitudinal magnetoresistance are observed. By evaluating films of different thickness and by correlating the temperature dependence of the carrier density and mobility with the magnetoresistance characteristics, we demonstrate that both the quasi-linear positive and the negative magnetoresistance are caused by conductivity fluctuations. Chiral anomaly is not needed to explain the observed features.
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Submitted 9 June, 2017;
originally announced June 2017.
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Pumping laser excited spins through MgO barriers
Authors:
Ulrike Martens,
Jakob Walowski,
Thomas Schumann,
Maria Mansurova,
Alexander Boehnke,
Torsten Huebner,
Günter Reiss,
Andy Thomas,
Markus Münzenberg
Abstract:
We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how b…
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We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how both, the TMS voltage and the TMS effect, depend on the size, position and intensity of the applied laser spot. For this study, a large variety of different temperature distributions was created across the junction. We recorded two-dimensional maps of voltages generated by heating in dependence of the laser spot position and the corresponding calculated TMS values. The voltages change in value and sign, from large positive values when heating the MTJ directly in the centre to small values when heating the junction on the edges and even small negative values when heating the sample away from the junction. Those zero crossings lead to very high calculated TMS ratios. Our systematic analysis shows, that the distribution of the temperature gradient is essential, to achieve high voltage signals and reasonable resulting TMS ratios. Furthermore, artefacts on the edges produce misleading results, but also open up further possibilities of more complex heating scenarios for spincaloritronics in spintronic devices.
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Submitted 16 February, 2017;
originally announced February 2017.
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Ultrafast photocurrents at the surface of the three-dimensional topological insulator $\mathrm{Bi}_2\mathrm{Se}_3$
Authors:
Lukas Braun,
Gregor Mussler,
Andrzej Hruban,
Marcin Konczykowski,
Martin Wolf,
Thomas Schumann,
Markus Münzenberg,
Luca Perfetti,
Tobias Kampfrath
Abstract:
Topological insulators constitute a new and fascinating class of matter with insulating bulk yet metallic surfaces that host highly mobile charge carriers with spin-momentum locking. Remarkably, the direction and magnitude of surface currents can be controlled with tailored light beams, but the underlying mechanisms are not yet well understood. To directly resolve the "birth" of such photocurrents…
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Topological insulators constitute a new and fascinating class of matter with insulating bulk yet metallic surfaces that host highly mobile charge carriers with spin-momentum locking. Remarkably, the direction and magnitude of surface currents can be controlled with tailored light beams, but the underlying mechanisms are not yet well understood. To directly resolve the "birth" of such photocurrents we need to boost the time resolution to the scale of elementary scattering events ($\sim$ 10 fs). Here, we excite and measure photocurrents in the three-dimensional model topological insulator $\mathrm{Bi}_2\mathrm{Se}_3$ with a time resolution as short as 20 fs by sampling the concomitantly emitted broadband THz electromagnetic field from 1 to 40 THz. Remarkably, the ultrafast surface current response is dominated by a charge transfer along the Se-Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to have orders of magnitude smaller magnitude than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are also of direct relevance for optoelectronic devices based on topological-insulator surface currents.
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Submitted 11 November, 2015; v1 submitted 2 November, 2015;
originally announced November 2015.
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Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
Authors:
S. Nakhaie,
J. M. Wofford,
T. Schumann,
U. Jahn,
M. Ramsteiner,
M. Hanke,
J. M. J. Lopes,
H. Riechert
Abstract:
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morpholog…
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Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.
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Submitted 28 May, 2015; v1 submitted 26 January, 2015;
originally announced January 2015.
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The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
Authors:
Timo Schumann,
Martin Dubslaff,
Myriano H. Oliveira Jr.,
Michael Hanke,
J. Marcelo J. Lopes,
Henning Riechert
Abstract:
Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with…
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Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with high precision by GID. The BL possesses a different lattice parameter and corrugation when it is uncovered or beneath MLG. Our results demonstrate that the interfacial BL is the main responsible for the strain in MLG. By promoting its decoupling from the substrate via intercalation, it turns into graphene, leading to a simultaneous relaxation of the MLG and formation of a quasi-free-standing BLG.
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Submitted 24 June, 2014;
originally announced June 2014.
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Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates
Authors:
S. Tongay,
T. Schumann,
A. F. Hebard
Abstract:
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow…
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We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.
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Submitted 4 October, 2009;
originally announced October 2009.
