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Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm$^2$/Vs at a perovskite oxide interface
Authors:
Georg Hoffmann,
Martina Zupancic,
Aysha A. Riaz,
Curran Kalha,
Christoph Schlueter,
Andrei Gloskovskii,
Anna Regoutz,
Martin Albrecht,
Johanna Nordlander,
Oliver Bierwagen
Abstract:
In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimensional electron gas (2DEG) with possible applications in, e.g., high-electronmobility transistors and ferroelectric field-effect transistors. So far, t…
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In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimensional electron gas (2DEG) with possible applications in, e.g., high-electronmobility transistors and ferroelectric field-effect transistors. So far, the realization of oxide 2DEGs is, however, largely limited to the interface between the single-crystal substrate and epitaxial film, preventing their deliberate placement inside a larger device architecture. Additionally, the substrate-limited quality of perovskite oxide interfaces hampers room-temperature 2DEG performance due to notoriously low electron mobility. In this work, we demonstrate the controlled creation of an interfacial 2DEG at the epitaxial interface between perovskite oxides BaSnO$_3$ and LaInO$_3$ with enhanced room-temperature electron mobilities up to 119 cm$^2$/Vs - the highest room-temperature value reported so far for a perovskite oxide 2DEG. Using a combination of state-of-the-art deposition modes during oxide molecular beam epitaxy, our approach opens up another degree of freedom in optimization and $in$-$situ$ control of the interface between two epitaxial oxide layers away from the substrate interface. We thus expect our approach to apply to the general class of perovskite oxide 2DEG systems and to enable their improved compatibility with novel device concepts and integration across materials platforms.
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Submitted 14 August, 2024;
originally announced August 2024.
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Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
Authors:
Wenshan Chen,
Kingsley Egbo,
Huaide Zhang,
Andrea Ardenghi,
Oliver Bierwagen
Abstract:
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of oxygen for the growth temperature calibration (by determining the adsorption temperature of the elements) and in-situ etching of oxide layers (e. g., Ga2O3 etc…
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The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of oxygen for the growth temperature calibration (by determining the adsorption temperature of the elements) and in-situ etching of oxide layers (e. g., Ga2O3 etched by Ga). These elemental fluxes may, however, leave unwanted cation adsorbates or droplets on the surface, which traditionally require removal by in-situ superheating or ex-situ wet-chemical etching with potentially surface-degrading effects. This study demonstrates a universal in-situ approach to remove the residual cation elements from the surface via conversion into a volatile suboxide by a molecular O2-flux in an MBE system followed by suboxide evaporation at temperatures significantly below the elemental evaporation temperature. We experimentally investigate the in-situ etching of Ga and Ge cation layers and their etching efficiency using in-situ line-of-sight quadrupole mass spectrometry (QMS) and reflection high-energy electron diffraction (RHEED). The application of this process is demonstrated by the in-situ removal of residual Ga droplets from a SiO2 mask after structuring a Ga2O3 layer by in-situ Ga-etching. This approach can be generally applied in MBE and MOCVD to remove residual elements with vapor pressure lower than that of their suboxides, such as B, In, La, Si, Sn, Sb, Mo, Nb, Ru, Ta, V, and W.
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Submitted 14 January, 2024;
originally announced January 2024.
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Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
Authors:
A. Ardenghi,
O. Bierwagen,
J. Lähnemann,
J. Kler,
A. Falkenstein,
M. Martin,
P. Mazzolini
Abstract:
Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandgap. In this work, we provide a guideline to achieve single phase $κ$-, $β$-Ga$_2$O$_3$ as well as their (In$_x$Ga$_{1-x}$)$_2$O$_3$ alloys up to x = 0.14 and x =…
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Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandgap. In this work, we provide a guideline to achieve single phase $κ$-, $β$-Ga$_2$O$_3$ as well as their (In$_x$Ga$_{1-x}$)$_2$O$_3$ alloys up to x = 0.14 and x = 0.17 respectively, using In-mediated metal exchange catalysis in plasma assisted molecular beam epitaxy (MEXCAT-MBE). The polymorph transition from $κ$ to $β$ is also addressed, highlighting the fundamental role played by the thermal stability of the $κ$-Ga$_2$O$_3$. Additionally, we also demonstrate the possibility to grow ($\bar{2}$01) $β$-Ga$_2$O$_3$ on top of $α$-Al$_2$O$_3$ (0001) at temperatures at least 100 °C above those achievable with conventional non-catalyzed MBE, opening the road for increased crystal quality in heteroepitaxy. The role of the substrate, as well as strain and structural defects in the growth of $κ$-Ga$_2$O$_3$ is also investigated by growing simultaneously on three different materials: (i) $α$-Al$_2$O$_3$ (0001), (ii) 20 nm of ($\bar{2}$01) $β$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$ (0001) and (iii) ($\bar{2}$01) $β$-Ga$_2$O$_3$ single crystal.
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Submitted 22 November, 2023;
originally announced November 2023.
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In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Authors:
Wenshan Chen,
Kingsley Egbo,
Hans Tornatzky,
Manfred Ramsteiner,
Markus R. Wagner,
Oliver Bierwagen
Abstract:
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is a well-suited thin film growth technique. In this study, we investigate the reaction kinetics of GeO…
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Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is a well-suited thin film growth technique. In this study, we investigate the reaction kinetics of GeO2 during plasma-assisted MBE using elemental Ge and plasma-activated oxygen fluxes. The growth rate as a function of oxygen flux is measured in-situ by laser reflectometry at different growth temperatures. A flux of the suboxide GeO desorbing off the growth surface is identified and quantified in-situ by the line-of-sight quadrupole mass spectrometry. Our measurements reveal that the suboxide formation and desorption limits the growth rate under metal-rich or high temperature growth conditions, and leads to etching of the grown GeO2 layer under Ge flux in the absence of oxygen. The quantitative results fit the sub-compound mediated reaction model, indicating the intermediate formation of the suboxide at the growth front. This model is further utilized to delineate the GeO2-growth window in terms of oxygen-flux and substrate temperature. Our study can serve as a guidance for the thin film synthesis of GeO2 and defect-free mesa etching in future GeO2-device processing.
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Submitted 27 April, 2023; v1 submitted 21 April, 2023;
originally announced April 2023.
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Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3(110): Growth window, strain relaxation, and domain pattern
Authors:
Georg Hoffmann,
Martina Zupancic,
Detlef Klimm,
Robert Schewski,
Martin Albrecht,
Manfred Ramsteiner,
Oliver Bierwagen
Abstract:
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimental growth window was found to be significantly narrower than the predicted one. We found the critical th…
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We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermodynamics of MBE (TOMBE) diagram, the experimental growth window was found to be significantly narrower than the predicted one. We found the critical thickness for strain relaxation of the LaInO3 layer (lattice mismatch $\approx$ -4$\%$) to be of 1 nm using in-situ RHEED analysis. Substrate and film possess an orthorhombic crystal structure which can be approximated by a pseudo-cubic lattice. X-ray-diffraction (XRD) analysis revealed the pseudo-cube-on-pseudo-cube epitaxial relationship ofthe LaInO3 films to the DyScO3 substrates. This relation was confirmed by transmission electron microscopy (TEM), which further resolved the presence of rotational orthorhombic domains - the majority of which have coinciding c-axis with that of the substrate. Raman spectroscopy further confirmed the presence of a LaInO3 layer. Our findings open up the possibility for 2-dimensional electron gases at the MBE-grown heterointerface with BaSnO3.
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Submitted 22 December, 2022;
originally announced December 2022.
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Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Authors:
Kingsley Egbo,
Jonas Lähnemann,
Andreas Falkenstein,
Joel Varley,
Oliver Bierwagen
Abstract:
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to $2\times10^{21}$cm$^{-3}$. In this concentration range, the incorporation of Ga into SnO was limited by the formation of secondary phases observed at $1.2\times10^{21}$cm$^{-3}$…
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(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to $2\times10^{21}$cm$^{-3}$. In this concentration range, the incorporation of Ga into SnO was limited by the formation of secondary phases observed at $1.2\times10^{21}$cm$^{-3}$ Ga, while the incorporation of La showed a lower solubility limit. Transport measurements on the doped samples reveal that Ga acts as an acceptor and La as a compensating donor. While Ga doping led to an increase of the hole concentration from $1\times10^{18}$cm$^{-3}-1\times10^{19}$cm$^{-3}$ for unintentionally (UID) SnO up to $5\times10^{19}$cm$^{-3}$, La-concentrations well in excess of the UID acceptor concentration resulted in semi-insulating films without detectable $n$-type conductivity. Ab-initio calculations qualitatively agree with our dopant assignment of Ga and La, and further predict In$_\text{Sn}$ to act as an acceptor as well as Al$_\text{Sn}$ and B$_\text{Sn}$ as donor. These results show the possibilities of controlling the hole concentration in $p$-type SnO, which can be useful for a range of optoelectronic and gas-sensing applications.
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Submitted 12 December, 2022;
originally announced December 2022.
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Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Authors:
Kingsley Egbo,
Esperanza Luna,
Jonas Lähnemann,
Georg Hoffmann,
Achim Trampert,
Jona Grümbel,
Elias Kluth,
Martin Feneberg,
Rüdiger Goldhahn,
Oliver Bierwagen
Abstract:
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn o…
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By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450°C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
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Submitted 23 September, 2022;
originally announced September 2022.
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Tackling Disorder in $γ$-Ga$_2$O$_3$
Authors:
Laura E. Ratcliff,
Takayoshi Oshima,
Felix Nippert,
Benjamin M. Janzen,
Elias Kluth,
Rüdiger Goldhahn,
Martin Feneberg,
Piero Mazzolini,
Oliver Bierwagen,
Charlotte Wouters,
Musbah Nofal,
Martin Albrecht,
Jack E. N. Swallow,
Leanne A. H. Jones,
Pardeep K. Thakur,
Tien-Lin Lee,
Curran Kalha,
Christoph Schlueter,
Tim D. Veal,
Joel B. Varley,
Markus R. Wagner,
Anna Regoutz
Abstract:
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent…
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Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Submitted 9 May, 2022;
originally announced May 2022.
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Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3
Authors:
A. Ardenghi,
O. Bierwagen,
A. Falkenstein,
G. Hoffmann,
J. Lähnemann,
M. Martin,
P. Mazzolini
Abstract:
The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux ($Φ_{SiO}$) from the source at different temperatures ($T_{SiO}$) confirmed SiO molecules to sublime with an activa…
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The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux ($Φ_{SiO}$) from the source at different temperatures ($T_{SiO}$) confirmed SiO molecules to sublime with an activation energy of 3.3eV. The $T_{SiO}$-dependent $Φ_{SiO}$ was measured in vacuum before and after subjecting the source material to an O$_{2}$-background of $10^{-5}$ mbar (typical oxide MBE regime). The absence of a significant $Φ_{SiO}$ difference indicates negligible source oxidation in molecular O$_{2}$. Mounted in an oxygen plasma-assisted MBE, Si-doped $β$-Ga2O3 layers were grown using this source. The $Φ_{SiO}$ at the substrate was evaluated [from 2.9x10$^{9}$ cm$^{-2}$s$^{-1}$ ($T_{SiO}$=700°C) to 5.5x10$^{13}$ cm$^{-2}$s$^{-1}$ (T$_{SiO}$=1000°C)] and Si-concentration in the $β$-Ga2O3 layers measured by secondary ion mass spectrometry highlighting unprecedented control of continuous Si-doping for oxide MBE, i.e., $N_{Si}$ from 4x10$^{17}$ cm$^{-3}$ ($T_{SiO}$=700°C) up to 1.7x10$^{20}$ cm$^{-3}$ ($T_{SiO}$=900°C). For a homoepitaxial $β$-Ga2O3 layer an Hall charge carrier concentration of 3x10$^{19}$ cm$^{-3}$ in line with the provided $Φ_{SiO}$ ($T_{SiO}$=800°C) is demonstrated. No SiO-incorporation difference was found between $β$-Ga2O3(010) layers homoepitaxially grown at 750°C and $β$-Ga2O3(-201) layers heteroepitaxially grown at 550°C. The presence of activated oxygen (plasma) resulted in partial source oxidation and related decrease of doping concentration (particularly at $T_{SiO}$<800°C) which has been tentatively explained with a simple model. Degassing the source at 1100°C reverted the oxidation.
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Submitted 11 February, 2022;
originally announced February 2022.
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The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer
Authors:
Alexandra Papadogianni,
Takahiro Nagata,
Oliver Bierwagen
Abstract:
The alloying of the group-III transparent semiconducting sesquioxides In$_2$O$_3$ and Ga$_2$O$_3$ can lead to a modulation of the properties of the parent compounds, e.g., the shallow- and deep-donor character of the oxygen vacancy or the presence and absence of a surface electron accumulation layer, respectively. In this work, we investigate the effect of alloying on the electron transport proper…
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The alloying of the group-III transparent semiconducting sesquioxides In$_2$O$_3$ and Ga$_2$O$_3$ can lead to a modulation of the properties of the parent compounds, e.g., the shallow- and deep-donor character of the oxygen vacancy or the presence and absence of a surface electron accumulation layer, respectively. In this work, we investigate the effect of alloying on the electron transport properties of unintentionally-doped single-crystalline and textured bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ thin films annealed in oxygen and vacuum with Ga contents up to $x$=0.18. Hall effect measurements demonstrate a surprising increase in electron density due to native defects with added Ga. This increase may be related to the incorporation of Ga-interstitials or oxygen vacancies induced by Ga-related unit-cell distortions. A combined investigation based on hard and soft x-ray photoelectron spectroscopy measurements demonstrates the existence of the surface electron accumulation layer for all alloy films and, hence, no depletion up to $x$=0.18. Finally, we additionally demonstrate a single-crystalline (In$_{0.92}$Ga$_{0.08}$)$_2$O$_3$:Sn film, as a possible transparent conductive oxide with a wider band gap than that of (Sn-doped) In$_2$O$_3$.
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Submitted 27 September, 2021;
originally announced September 2021.
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Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources
Authors:
Georg Hoffmann,
Zongzhe Cheng,
Oliver Brandt,
Oliver Bierwagen
Abstract:
In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources, but is enhanced by several orders of magnitude for low source temperatures. Using line-of-sight quadrupole mass spectrometry, we identify the dominant contribution to the total flux emanating from Sn and Ga sources at these temperatures t…
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In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources, but is enhanced by several orders of magnitude for low source temperatures. Using line-of-sight quadrupole mass spectrometry, we identify the dominant contribution to the total flux emanating from Sn and Ga sources at these temperatures to be due to the unintentional formation and evaporation of the respective suboxides SnO and Ga$_{2}$O. We quantitatively describe this phenomenon by a rate-equation model that takes into account the O background pressure, the resulting formation of the suboxides via oxidation of the metal source, and their subsequent thermally activated evaporation. As a result, the total flux composed of the metal and the suboxide fluxes exhibit an \textsf{S}-shape temperature dependence instead of the expected linear one in an Arrhenius plot, in excellent agreement with the available experimental data. Our model reveals that the thermally activated regimes at low and high temperatures are almost exclusively due to suboxide and metal evaporation, respectively, joined by an intermediate plateau-like regime in which the flux is limited by the available amount of O. An important suboxide contribution is expected for all elemental sources whose suboxide exhibits a higher vapor pressure than the element, such as B, Ga, In, La, Si, Ge, Sn, Sb, Mo, Nb, Ru, Ta, V, and W. This contribution can play a decisive role in the molecular beam epitaxy of oxides, including multicomponent or complex oxides, from elemental sources. Finally, our model predicts suboxide-dominated growth in low-pressure chemical vapor deposition of Ga$_{2}$O$_{3}$ and In$_{2}$O$_{3}$.
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Submitted 2 September, 2021;
originally announced September 2021.
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Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity
Authors:
Alexandra Papadogianni,
Charlotte Wouters,
Robert Schewski,
Johannes Feldl,
Jonas Lähnemann,
Takahiro Nagata,
Elias Kluth,
Martin Feneberg,
Rüdiger Goldhahn,
Manfred Ramsteiner,
Martin Albrecht,
Oliver Bierwagen
Abstract:
In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy under various growth conditions. A pure In$_2$O$_3$ buffer layer between the substrate and (In$_{1-x}$Ga$_x$)$_2$O$_3$ alloy is shown to result in smoother film surfaces and significant…
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In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular beam epitaxy under various growth conditions. A pure In$_2$O$_3$ buffer layer between the substrate and (In$_{1-x}$Ga$_x$)$_2$O$_3$ alloy is shown to result in smoother film surfaces and significantly improved crystallinity. Symmetric out-of-plane 2$θ- ω$ x-ray diffraction scans show a single (111) crystal orientation and transmission electron microscopy confirms the single-crystallinity up to $x = 0.18$ and only slight film quality deterioration with increasing Ga content. Partially relaxed layers are demonstrated via reciprocal space mapping with lattice parameters fitting well to Vegard's law. However, the Ga cations are not evenly distributed within the films containing nominally $x > 0.11$: inclusions with high Ga density up to $x = 0.50$ are observed within a "matrix" with $x \approx 0.08$. The cubic bixbyite phase is preserved, in both the "matrix" and the inclusions. Moreover, for $x \geq 0.11$, both the Raman phonon lines as well as the optical absorption onset remain nearly constant. Hard x-ray photoelectron spectroscopy measurements also indicate a widening of the band gap and exhibit similar saturation of the Ga 2p core level position for high Ga contents. This saturation behavior of the spectroscopic properties further supports the limited Ga incorporation into the "matrix" of the film.
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Submitted 17 June, 2021;
originally announced June 2021.
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Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)$_2$O$_3$ alloy films
Authors:
Johannes Feldl,
Martin Feneberg,
Alexandra Papadogianni,
Jonas Lähnemann,
Takahiro Nagata,
Oliver Bierwagen,
Rüdiger Goldhahn,
Manfred Ramsteiner
Abstract:
The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronic and vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloy films grown by molecular beam epitaxy. Using spectroscopic ellipsometry, a linear dependence of the absorption onset on the Ga content $x$ is found with a blueshift of up to 150 meV for $x = 0.1$. Consistently, the fundamental band gap exhibits a…
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The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronic and vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloy films grown by molecular beam epitaxy. Using spectroscopic ellipsometry, a linear dependence of the absorption onset on the Ga content $x$ is found with a blueshift of up to 150 meV for $x = 0.1$. Consistently, the fundamental band gap exhibits a blueshift as determined by hard X-ray photoelectron spectroscopy. The dependence of the absorption onset and the effective electron mass on the electron concentration is derived from the infrared dielectric functions for a Sn doped alloy film. The influence of alloying on phonon modes is analyzed on the basis of Raman spectroscopic measurements. The frequencies of several phonon modes are identified as sensitive measures for the spectroscopic determination of the Ga content.
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Submitted 20 August, 2021; v1 submitted 16 April, 2021;
originally announced April 2021.
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Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
Authors:
Patrick Vogt,
Felix V. E. Hensling,
Kathy Azizie,
Celesta S. Chang,
David Turner,
Jisung Park,
Jonathan P. McCandless,
Hanjong Paik,
Brandon J. Bocklund,
Georg Hoffman,
Oliver Bierwagen,
Debdeep Jena,
Huili G. Xing,
Shin Mou,
David A. Muller,
Shun-Li Shang,
Zi-Kui Liu,
Darrell G. Schlom
Abstract:
This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a…
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This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices.
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Submitted 30 October, 2020;
originally announced November 2020.
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Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO$_2$(101)
Authors:
Cristian Simion,
Federico Schipani,
Alexandra Papadogianni,
Adelina Stanoiu,
Melanie Budde,
Alexandru Oprea,
Udo Weimar,
Oliver Bierwagen,
Nicolae Barsan
Abstract:
Semiconducting metal oxide (SMOX)-based gas sensors are indispensable for safety and health applications, e.g. explosive, toxic gas alarms, controls for intake into car cabins and monitor for industrial processes. In the past, the sensor community has been studying polycrystalline materials as sensors where the porous and random microstructure of the SMOX does not allow a separation of the phenome…
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Semiconducting metal oxide (SMOX)-based gas sensors are indispensable for safety and health applications, e.g. explosive, toxic gas alarms, controls for intake into car cabins and monitor for industrial processes. In the past, the sensor community has been studying polycrystalline materials as sensors where the porous and random microstructure of the SMOX does not allow a separation of the phenomena involved in the sensing process. This lead to conduction models that can model and predict the behavior of the overall response, but they were not capable of giving fundamental information regarding the basic mechanisms taking place. The study of epitaxial layers is the definite prove to clarify the different aspects and contributions of the sensing mechanisms that are not possible to do by studying a polycrystalline sample. A detailed analytical model for n and p-type single-crystalline/compact metal oxide gas sensors was developed that directly relates the conductance of the sample with changes in the surface electrostatic potential. Combined DC resistance and work function measurements were used in a compact SnO2 (101) layer in operando conditions that allowed us to check the validity of our model in the region where Boltzmann approximation holds to determine surface and bulk properties of the material.
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Submitted 6 October, 2020;
originally announced October 2020.
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Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors
Authors:
Somayeh Saadat Niavol,
Melanie Budde,
Alexandra Papadogianni,
Martin Heilmann,
Hossain Milani Moghaddam,
Celso M. Aldao,
Giovanni Ligorio,
Emil J. W. List-Kratochvil,
Joao Marcelo J. Lopes,
Nicolae Barsan,
Oliver Bierwagen,
Federico Schipani
Abstract:
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the…
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Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases.
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Submitted 6 October, 2020;
originally announced October 2020.
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Offcut-related step-flow and growth rate enhancement during (100) $β$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
Authors:
Piero Mazzolini,
Andreas Falkenstein,
Zbigniew Galazka,
Manfred Martin,
Oliver Bierwagen
Abstract:
In this work we investigate the growth of $β$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth rates by non-catalyzed MBE in the past. We demonstrate that the proper tuning of the MEXCAT growth parameters and the choice of a proper substrate offcut allow for…
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In this work we investigate the growth of $β$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth rates by non-catalyzed MBE in the past. We demonstrate that the proper tuning of the MEXCAT growth parameters and the choice of a proper substrate offcut allow for the deposition of thin films with high structural quality via step-flow growth mechanism at relatively high growth rates for $β$-Ga2O3 homoepitaxy (i.e., around 1.5 nm/min, $\approx$45% incorporation of the incoming Ga flux), making MBE growth on this orientation feasible. Moreover, through the employment of the investigated four different (100) substrate offcuts along the [00-1] direction (i.e., 0$^\circ$, 2$^\circ$, 4$^\circ$, 6$^\circ$) we give experimental evidence on the fundamental role of the (-201) step edges as nucleation sites for growth of (100)-oriented Ga2O3 films by MBE.
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Submitted 1 October, 2020;
originally announced October 2020.
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SnO/$β$-Ga2O3 vertical $pn$ heterojunction diodes
Authors:
Melanie Budde,
Daniel Splith,
Piero Mazzolini,
Abbes Tahraoui,
Johannes Feldl,
Manfred Ramsteiner,
Holger von Wenckstern,
Marius Grundmann,
Oliver Bierwagen
Abstract:
Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without…
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Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high leakage) electrical characterization by current-voltage and capacitance-voltage measurement was performed. The results reveal a type-I band alignment and junction transport by thermionic emission in forward bias. A rectification of $2\times10^{8}$ at $\pm1$V, an ideality factor of 1.16, differential specific on-resistance of 3.9m$Ω\thinspace$cm$^{2}$, and built-in voltage of 0.96V were determined. The $pn$-junction isolation prevented parallel conduction in the highly-conductive Ga$_{2}$O$_{3}$ substrate (sheet resistance $R_{S}\approx3\thinspaceΩ$) during van-der-Pauw Hall measurements of the SnO layer on top ($R_{S}\approx150$k$Ω$, $p\approx2.5\times10^{18}$cm$^{-3}$, Hall mobility $\approx1$cm$^{2}$/Vs). The measured maximum reverse breakdown voltage of the diodes was 66V, corresponding to a peak breakdown field 2.2MV/cm in the Ga$_{2}$O$_{3}$-depletion region. Higher breakdown voltages that are required in high-voltage devices could be achieved by reducing the donor concentration in the $β$-Ga$_{2}$O$_{3}$ to increase the depletion width as well as improving the contact geometry to reduce field crowding.
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Submitted 1 October, 2020;
originally announced October 2020.
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Isotopic study of Raman active phonon modes in $β$-Ga$_{2}$O$_{3}$
Authors:
Benjamin M. Janzen,
Piero Mazzolini,
Roland Gillen,
Andreas Falkenstein,
Manfred Martin,
Hans Tornatzky,
Oliver Bierwagen,
Markus R. Wagner
Abstract:
Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $β$-Ga$_{2}$O$_{3}$ provides insights into fundamental material properties such as crystal structure and orientation and can contribute to the identification of dopants and point defects. We investigate…
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Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $β$-Ga$_{2}$O$_{3}$ provides insights into fundamental material properties such as crystal structure and orientation and can contribute to the identification of dopants and point defects. We investigate the Raman active phonon modes of $β$-Ga$_{2}$O$_{3}$ in two different oxygen isotope compositions ($^{16}$O,$^{18}$O) by experiment and theory: By carrying out polarized micro-Raman spectroscopy measurements on the (010) and ($\bar{2}$01) planes, we determine the frequencies of all 15 Raman active phonons for both isotopologues. The measured frequencies are compared with the results of density functional perturbation theory (DFPT) calculations. In both cases, we observe a shift of Raman frequencies towards lower energies upon substitution of $^{16}$O with $^{18}$O. By quantifying the relative frequency shifts of the individual Raman modes, we identify the atomistic origin of all modes (Ga-Ga, Ga-O or O-O) and present the first experimental confirmation of the theoretically calculated energy contributions of O lattice sites to Raman modes. We find that oxygen substitution on the O$_{\mathrm{II}}$ site leads to an elevated relative frequency shift compared to O$_{\mathrm{I}}$ and O$_{\mathrm{III}}$ sites. This study presents a blueprint for the future identification of different point defects in Ga$_{2}$O$_{3}$ by Raman spectroscopy.
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Submitted 7 September, 2020; v1 submitted 17 August, 2020;
originally announced August 2020.
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Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Authors:
Melanie Budde,
Piero Mazzolini,
Johannes Feldl,
Christian Golz,
Takahiro Nagata,
Shigenori Ueda,
Georg Hoffmann,
Manfred Ramsteiner,
Oliver Bierwagen
Abstract:
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100cm^2/Vs p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) hole mobilities…
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Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100cm^2/Vs p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility, lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by its metastability with respect to SnO2 and Sn, requiring epitaxy for the realization of single crystalline material typically required for high-end applications. Here, we give a comprehensive account on the epitaxial growth of SnO, its (meta)stability, and its thermoelectric transport properties in the context of the present literature. Textured and single-crystalline, unintentionally-doped p-type SnO(001) films are grown by plasma-assisted molecular beam epitaxy. The metastability of this semiconducting oxide is addressed theoretically through an equilibrium phase diagram. Experimentally, the related SnO growth window is rapidly determined by an in-situ growth kinetics study as function of Sn-to-O-plasma flux ratio and growth temperature. The presence of secondary Sn and SnOx (1 < x <= 2) phases is comprehensively studied by different methods, indicating the presence of Sn3O4 or Sn as major secondary phases, as well as a fully oxidized SnO2 film surface. The hole transport properties, Seebeck coefficient, and density-of-states effective mass are determined and critically discussed in the context of the present literature on SnO, considering its anisotropic hole-effective mass.
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Submitted 3 August, 2020; v1 submitted 27 July, 2020;
originally announced July 2020.
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Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy
Authors:
J. Feldl,
M. Budde,
C. Tschammer,
O. Bierwagen,
M. Ramsteiner
Abstract:
Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For the determination of the Néel temperature, we demonstrate a reliable approach by analyzing the temperature dependence of the Raman peak originating from second-order scattering by magnons. The antiferromagnetic coupling s…
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Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For the determination of the Néel temperature, we demonstrate a reliable approach by analyzing the temperature dependence of the Raman peak originating from second-order scattering by magnons. The antiferromagnetic coupling strength is found to be strongly influenced by the growth conditions. The low-temperature magnon frequency and the Néel temperature are demonstrated to depend on the biaxial lattice strain and the degree of structural disorder which is dominated by point defects.
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Submitted 23 July, 2020;
originally announced July 2020.
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Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$
Authors:
Jack E. N. Swallow,
Christian Vorwerk,
Piero Mazzolini,
Patrick Vogt,
Oliver Bierwagen,
Alexander Karg,
Martin Eickhoff,
Jörg Schörmann,
Markus R. Wagner,
Joseph W. Roberts,
Paul R. Chalker,
Matthew J. Smiles,
Philip A. E. Murgatroyd,
Sara A. Razek,
Zachary W. Lebens-Higgins,
Louis F. J. Piper,
Leanne A. H. Jones,
Pardeep Kumar Thakur,
Tien-Lin Lee,
Joel B. Varley,
Jürgen Furthmüller,
Claudia Draxl,
Tim D. Veal,
Anna Regoutz
Abstract:
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ra…
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The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga$_2$O$_3$ polymorphs as materials at the heart of future electronic device generations.
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Submitted 22 September, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio
Authors:
Piero Mazzolini,
Oliver Bierwagen
Abstract:
Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3/(AlxGa1-x)2O3 heterostructures, whose roughness is ruled by that of the Ga2O3 layer, can enable higher mobility 2DEGs by reducing interface roughness scattering. To this end we experimentally prove that a substrate offc…
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Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3/(AlxGa1-x)2O3 heterostructures, whose roughness is ruled by that of the Ga2O3 layer, can enable higher mobility 2DEGs by reducing interface roughness scattering. To this end we experimentally prove that a substrate offcut along the [001] direction allows to obtain smooth beta-Ga2O3 layers in (010)-homoepitaxy under metal-rich conditions. Applying In-mediated metal-exchange catalysis (MEXCAT) in molecular beam epitaxy at high substrate temperatures (Tg = 900 °C) we compare the morphology of layers grown on (010)-oriented substrates with different unintentional offcuts. The layer roughness is generally ruled by (i) (110) and (-110)-facets visible as elongated features along the [001] direction (rms < 0.5 nm), and (ii) trenches (5-10 nm deep) orthogonal to [001]. We show that an unintentional substrate offcut of only 0.1° almost oriented along the [001] direction suppresses these trenches resulting in a smooth morphology with a roughness exclusively determined by the facets, i.e., rms 0.2 nm. Since we found the facet-and-trench morphology in layers grown by MBE with and without MEXCAT, we propose that the general growth mechanism for (010)-homoepitaxy is ruled by island growth whose coalescence results in the formation of the trenches. The presence of a substrate offcut in the [001] direction can allow for step-flow growth or island nucleation at the step edges, which prevents the formation of trenches. Moreover, we give experimental evidence for a decreasing surface diffusion length or increasing nucleation density with decreasing metal-to-oxygen flux ratio. Based on our results we can rule-out step bunching as cause of the trench formation as well as a surfactant-effect of indium during MEXCAT.
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Submitted 12 March, 2020;
originally announced March 2020.
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The electrical conductivity tensor of $β$-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries
Authors:
Christian Golz,
Vanesa Hortelano,
Fariba Hatami,
W. Ted Masselink,
Zbigniew Galazka,
Oliver Bierwagen
Abstract:
The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differentl…
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The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differently-oriented high-quality bulk samples and the comparison to finite element simulations we precisely determine the ratio of all elements of the $β$-Ga$_{2}$O$_{3}$ 3-dimensional electrical conductivity tensor. Despite the structural anisotropy a nearly isotropic conductivity at and above room temperature was found with the principal conductivities deviating from each other by less than 6% and the off-diagonal element being $\approx3$% of the diagonal ones. Analysis of the temperature dependence of the anisotropy and mobility of differently doped samples allows us to compare the anisotropy for dominant phonon-scattering to that for dominant ionized-impurity scattering. For both scattering mechanisms, the conductivites along the $a$ and $b$-direction agree within 2%. In contrast, the conductivity along $c$-direction amounts to $0.96\times$ and up to $1.12\times$ that along the $b$-direction for phonon and ionized impurity scattering, respectively. The determined transport anisotropies are larger than the theoretically predicted effective mass anisotropy, suggesting slightly anisotropic scattering mechanisms. We demonstrate that significantly higher anisotropies can be caused by oriented extended structural defects in the form of low-angle grain boundaries for which we determined energy barriers of multiple 10 meV.
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Submitted 12 March, 2019; v1 submitted 21 June, 2018;
originally announced June 2018.
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Revisiting the origin of satellites in core level photoemission of transparent conducting oxides: the case of $n$-doped SnO$_2$
Authors:
F. Borgatti,
J. A. Berger,
D. Céolin,
J. S. Zhou,
J. J. Kas,
M. Guzzo,
C. F. McConville,
F. Offi,
G. Panaccione,
A. Regoutz,
D. J. Payne,
J. -P. Rueff,
O. Bierwagen,
M. E. White,
J. S. Speck,
M. Gatti,
R. G. Egdell
Abstract:
The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by co…
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The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by coupling of the Sn core hole to the plasma oscillations of the free electrons introduced by doping. Within the same theoretical framework, spectral changes of the valence band spectra are also related to dynamical screening effects. These results demonstrate that, for the interpretation of electron correlation features in the core level photoelectron spectra of such narrow-band materials, going beyond the homogeneous electron gas electron-plasmon coupling model is essential.
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Submitted 24 October, 2017;
originally announced October 2017.
