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Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
Authors:
Sergio Fernández-Garrido,
Xiang Kong,
Tobias Gotschke,
Raffaella Calarco,
Lutz Geelhaar,
Achim Trampert,
Oliver Brandt
Abstract:
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(000$\bar{1}$) substrates to ensure a well-defined polarity and an absence of structural and morphological defects.…
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We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(000$\bar{1}$) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si$_{x}$N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance.
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Submitted 30 January, 2024;
originally announced February 2024.
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ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
Authors:
Philipp John,
Achim Trampert,
Duc Van Dinh,
Domenik Spallek,
Jonas Lähnemann,
Vladimir Kaganer,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congrue…
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We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congruent, low-symmetry GaN/ScN interface. The 13.1 % uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN($1\bar{1}00$) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures made of closely lattice-matched GaN, ScN, HfN and ZrN compounds.
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Submitted 1 February, 2024;
originally announced February 2024.
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Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
Authors:
S. Fernández-Garrido,
A. Redondo-Cubero,
R. Gago,
F. Bertram,
J. Christen,
E. Luna,
A. Trampert,
J. Pereiro,
E. Muñoz,
E. Calleja
Abstract:
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuousl…
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Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that Indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodo-luminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.
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Submitted 30 January, 2024;
originally announced February 2024.
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Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Authors:
Sergio Fernández-Garrido,
Manfred Ramsteiner,
Guanhui Gao,
Lauren A. Galves,
Bharat Sharma,
Pierre Corfdir,
Gabriele Calabrese,
Ziani de Souza Schiaber,
Carsten Pfüller,
Achim Trampert,
João Marcelo J. Lopes,
Oliver Brandt,
Lutz Geelhaar
Abstract:
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N expos…
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We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nanowire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based devices. The nanowires nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates.
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Submitted 30 January, 2024;
originally announced January 2024.
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Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Authors:
Johannes K. Zettler,
Pierre Corfdir,
Christian Hauswald,
Esperanza Luna,
Uwe Jahn,
Timur Flissikowski,
Emanuel Schmidt,
Carsten Ronning,
Achim Trampert,
Lutz Geelhaar,
Holger T. Grahn,
Oliver Brandt,
Sergio Fernández-Garrido
Abstract:
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative s…
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The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which is potentially much stronger, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.
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Submitted 30 January, 2024;
originally announced January 2024.
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Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
Authors:
M Gómez Ruiz,
Aron Castro,
Jesús Herranz,
Alessandra da Silva,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar,
Jonas Lähnemann
Abstract:
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In,Ga)As nanow…
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(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In,Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) fl ux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In,Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms.
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Submitted 9 October, 2023;
originally announced October 2023.
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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Authors:
Philipp John,
Mikel Gómez Ruiz,
Len van Deurzen,
Jonas Lähnemann,
Achim Trampert,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of…
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We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of the nanowire elongation rate measured at different temperatures shows that the Al adatom diffusion length is maximised at 1150 °C, which appears to be the optimum growth temperature. However, analysis of the nanowire luminescence shows a steep increase in the deep-level signal already above 1050 °C, associated with O incorporation from the Al$_2$O$_3$ substrate. Comparison with AlN nanowires grown on Si, MgO and SiC substrates suggests that heavy doping of Si and O by interdiffusion from the TiN/substrate interface increases the nanowire internal quantum efficiency, presumably due to the formation of a SiN$_x$ or AlO$_x$ passivation shell. The outdiffusion of Si and O would also cause the formation of the inversion domains observed in the nanowires. It follows that for optoelectronic and piezoelectric applications, optimal AlN nanowire ensembles should be prepared at 1150 °C on TiN/SiC substrates and will require an ex situ surface passivation.
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Submitted 1 February, 2024; v1 submitted 15 June, 2023;
originally announced June 2023.
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Large-area synthesis of ferromagnetic Fe$_{5-x}$GeTe$_{2}$/graphene van der Waals heterostructures with Curie temperature above room temperature
Authors:
H. Lv,
A. da Silva,
A. I. Figueroa,
C. Guillemard,
I. Fernández Aguirre,
L. Camosi,
L. Aballe,
M. Valvidares,
S. O. Valenzuela,
J. Schubert,
M. Schmidbauer,
J. Herfort,
M. Hanke,
A. Trampert,
R. Engel-Herbert,
M. Ramsteiner,
J. M. J. Lopes
Abstract:
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly…
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Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly uniform heterostructures with well-defined interfaces between different 2D layered materials. It also requires that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, we demonstrate large-area growth of Fe$_{5-x}$GeTe$_{2}$/graphene heterostructures achieved by vdW epitaxy of Fe$_{5-x}$GeTe$_{2}$ on epitaxial graphene. Structural characterization confirmed the realization of a continuous vdW heterostructure film with a sharp interface between Fe$_{5-x}$GeTe$_{2}$ and graphene. Magnetic and transport studies revealed that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond non-scalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.
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Submitted 17 March, 2023;
originally announced March 2023.
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Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
Authors:
E. Cheah,
D. Z. Haxell,
R. Schott,
P. Zeng,
E. Paysen,
S. C. ten Kate,
M. Coraiola,
M. Landstetter,
A. B. Zadeh,
A. Trampert,
M. Sousa,
H. Riel,
F. Nichele,
W. Wegscheider,
F. Krizek
Abstract:
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures a…
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In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. We present a study of Al films on shallow InAs two-dimensional electron gas systems grown by molecular beam epitaxy, with focus on control of the Al crystal structure. We identify the dominant grain types present in our Al films and show that the formation of grain boundaries can be significantly reduced by controlled roughening of the epitaxial interface. Finally, we demonstrate that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system.
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Submitted 17 January, 2023;
originally announced January 2023.
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Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Authors:
Kingsley Egbo,
Esperanza Luna,
Jonas Lähnemann,
Georg Hoffmann,
Achim Trampert,
Jona Grümbel,
Elias Kluth,
Martin Feneberg,
Rüdiger Goldhahn,
Oliver Bierwagen
Abstract:
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn o…
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By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450°C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
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Submitted 23 September, 2022;
originally announced September 2022.
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Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Authors:
Thomas Auzelle,
Chiara Sinito,
Jonas Lähnemann,
Guanhui Gao,
Timur Flissikowski,
Achim Trampert,
Sergio Fernández-Garrido,
Oliver Brandt
Abstract:
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially ident…
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We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially identical quantum well widths and Al content. Regardless of the crystal orientation, the exciton decay in the MQWs at 10 K is dominantly radiative and the photoluminescence (PL) energy follows the quantum confined Stark effect (QCSE) for different quantum well widths. A prominent free-to-bound transition involving interface shallow donors is, however, visible for the N-polar MQWs. At room-temperature, in contrast, the exciton decay in all samples is dominated by nonradiative recombination taking place at point defects, presumably Ca or V N located at the bottom QW interface. Remarkably, the N-polar MQWs exhibit a higher PL intensity and longer decay times than the Ga-polar MQWs at room-temperature. This improved internal quantum efficiency is attributed to the beneficial orientation of the internal electric field that effectively reduces the capture rate of minority carriers by interface trap states.
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Submitted 13 May, 2022; v1 submitted 25 November, 2021;
originally announced November 2021.
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Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells
Authors:
Hanno Küpers,
Ryan B. Lewis,
Pierre Corfdir,
Michael Niehle,
Timur Flissikowski,
Holger T. Grahn,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell qu…
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Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, i. e. when As and the group-III metals essentially do not impinge at the same time, is more than two orders of magnitude higher than for shell quantum wells prepared with substantially overlapping fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the materials properties of nanowire shells. We expect that this finding holds also for other alloy nanowire shells.
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Submitted 23 June, 2021;
originally announced June 2021.
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GaSbBi alloys and heterostructures: fabrication and properties
Authors:
O. Delorme,
L. Cerutti,
R. Kudrawiec,
Esperanza Luna,
J. Kopaczek,
M. Gladysiewicz,
A. Trampert,
E. Tournié,
J. -B. Rodriguez
Abstract:
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $μ$m). However, due to its large size, Bi does not readily incorporate into III…
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Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 $μ$m). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.
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Submitted 24 October, 2019;
originally announced October 2019.
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Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Authors:
Mani Azadmand,
Tomas Auzelle,
Jonas Lähnemann,
Guanhui Gao,
Lars Nicolai,
Manfred Ramsteiner,
Achim Trampert,
Stefano Sanguinetti,
Oliver Brandt,
Lutz Geelhaar
Abstract:
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the subst…
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We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.
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Submitted 16 October, 2019;
originally announced October 2019.
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Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Authors:
Jesús Herranz,
Pierre Corfdir,
Esperanza Luna,
Uwe Jahn,
Ryan B. Lewis,
Lutz Schrottke,
Jonas Lähnemann,
Abbes Tahraoui,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar
Abstract:
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonic…
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Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 $μ$m in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 $μ$m.
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Submitted 18 December, 2019; v1 submitted 27 August, 2019;
originally announced August 2019.
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Characterization of L21 order in Co2FeSi thin films on GaAs
Authors:
B Jenichen,
T Hentschel,
J Herfort,
X Kong,
A Trampert,
I Zizak
Abstract:
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21 and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneiti…
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Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21 and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L21 ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio.
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Submitted 11 July, 2019;
originally announced July 2019.
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Long-range order and thermal stability of thin Co$_{2}$FeSi films on GaAs(111)B
Authors:
B Jenichen,
J Herfort,
K Kumakura,
A Trampert
Abstract:
Co$_{2}$FeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The Co$_{2}$FeSi films grow in an island growth mode at substrate temperatures $T_{S}$ between $T_{S}$~=~100$\thinspace^{\circ}$C and 425$\thinspace^{\circ}$C. The structures have a stable interface up to $T_{S}=275~^{\circ}$C. The films c…
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Co$_{2}$FeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The Co$_{2}$FeSi films grow in an island growth mode at substrate temperatures $T_{S}$ between $T_{S}$~=~100$\thinspace^{\circ}$C and 425$\thinspace^{\circ}$C. The structures have a stable interface up to $T_{S}=275~^{\circ}$C. The films contain fully ordered $L2_{1}$ and partially ordered $B2$ phases. The spatial distribution of long-range order in Co$_{2}$FeSi is characterized using a comparison of TEM images taken with superlattice reflections and the corresponding fundamental reflections. The spatial inhomogeneities of long-range order can be explained by local non-stoichiometry due to lateral segregation or stress relaxation without formation of extended defects.
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Submitted 11 July, 2019;
originally announced July 2019.
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Structural properties of Co$_{2}$TiSi films on GaAs(001)
Authors:
B Jenichen,
J Herfort,
M Hanke,
U Jahn,
X Kong,
M T Dau,
A Trampert,
H Kirmse,
S C Erwin
Abstract:
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is foun…
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Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13~nm these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found \textit{L$2_1$} and \textit{B}2 ordered regions, however the [Co]/[Ti]--ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic \textit{B}2--ordering with the best order parallel to the axes of the columns.
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Submitted 11 July, 2019;
originally announced July 2019.
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Ordered structure of FeGe$_2$ formed during solid-phase epitaxy
Authors:
B Jenichen,
M Hanke,
S Gaucher,
A Trampert,
J Herfort,
H Kirmse,
B Haas,
E Willinger,
X Huang,
S C Erwin
Abstract:
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does…
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Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by solid phase epitaxy of Ge on Fe$_{3}$Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.
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Submitted 11 July, 2019;
originally announced July 2019.
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Lattice matched Volmer-Weber growth of Fe$_3$Si on GaAs(001) -- the influence of the growth rate
Authors:
B Jenichen,
Z Cheng,
M Hanke,
J Herfort,
A Trampert
Abstract:
We investigate the formation of lattice matched single-crystalline Fe$_3$Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe$_3$Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe$_3$Si/GaAs-interfa…
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We investigate the formation of lattice matched single-crystalline Fe$_3$Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe$_3$Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe$_3$Si/GaAs-interface for higher growth rates, whereas they are fully ordered for lower growth rates.
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Submitted 27 August, 2019; v1 submitted 11 July, 2019;
originally announced July 2019.
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Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Authors:
Ryan B. Lewis,
Achim Trampert,
Esperanza Luna,
Jesús Herranz,
Carsten Pfüller,
Lutz Geelhaar
Abstract:
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D) Frank-van der Merwe to Stranski-Krastanov, resulting in the formation of three-dimensional (3D) InAs islands on the surface. Furthermore, exposing static InAs 2D l…
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We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D) Frank-van der Merwe to Stranski-Krastanov, resulting in the formation of three-dimensional (3D) InAs islands on the surface. Furthermore, exposing static InAs 2D layers to Bi induces a rearrangement of the strained layer into 3D islands. We explore the effect of varying the InAs thickness and Bi flux for these two growth approaches, observing a critical thickness for 3D island formation in both cases. Characterization of (110) InAs quantum dots with high-resolution transmission electron microscopy reveals that larger islands grown by the Stranski-Krastanov mode are plastically relaxed, while small islands grown by the on-demand approach are coherent. Strain relaxation along the [1-10] direction is achieved by 90 degree pure-edge dislocations with dislocation lines running along [001]. In contrast, strain relief along [001] is by 60 degree misfit dislocations. This behaviour is consistent with observations of planar (In,Ga)As/GaAs(110) layers. These results illustrate how surfactant Bi can provoke and control quantum dot formation where it normally does not occur.
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Submitted 13 May, 2019;
originally announced May 2019.
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Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Authors:
Carsten Pfüller,
Pierre Corfdir,
Christian Hauswald,
Timur Flissikowski,
Xiang Kong,
Johannes K. Zettler,
Sergio Fernández-Garrido,
Pınar Doğan,
Holger T. Grahn,
Achim Trampert,
Lutz Geelhaar,
Oliver Brandt
Abstract:
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of sho…
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We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of short ones. Cathodoluminescence intensity maps reveal the 3.45-eV band to originate primarily from the long nanowires. Transmission electron microscopy shows that these long nanowires are either Ga polar and are joined by an inversion domain boundary with their short N-polar neighbors, or exhibit a Ga-polar core surrounded by a N-polar shell with a tubular inversion domain boundary at the core/shell interface. For samples grown at high temperatures, which exhibit a uniform nanowire morphology, the 3.45-eV band is also found to originate from particular nanowires in the ensemble and thus presumably from inversion domain boundaries stemming from the coexistence of N- and Ga-polar nanowires. For several of the investigated samples, the 3.45-eV band splits into a doublet. We demonstrate that the higher-energy component of this doublet arises from the recombination of two-dimensional excitons free to move in the plane of the inversion domain boundary. In contrast, the lower-energy component of the doublet originates from excitons localized in the plane of the inversion domain boundary. We propose that this in-plane localization is due to shallow donors in the vicinity of the inversion domain boundaries.
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Submitted 19 October, 2016; v1 submitted 14 July, 2016;
originally announced July 2016.
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Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Authors:
Gabriele Calabrese,
Pierre Corfdir,
Guanhui Gao,
Carsten Pfüller,
Achim Trampert,
Oliver Brandt,
Lutz Geelhaar,
Sergio Fernández-Garrido
Abstract:
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepa…
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We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.
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Submitted 19 February, 2016;
originally announced February 2016.
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Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires
Authors:
Thilo Krause,
Michael Hanke,
Oliver Brandt,
Achim Trampert
Abstract:
We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity theory, we study the dependence of the strain field on the ratio of segment length and nanowire radius. Contrary to intuition, the out-of-plane-component of the elastic strain tensor is found to assume large negative valu…
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We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity theory, we study the dependence of the strain field on the ratio of segment length and nanowire radius. Contrary to intuition, the out-of-plane-component of the elastic strain tensor is found to assume large negative values for a length-to-radius ratio close to one. We show that this unexpected effect is a direct consequence of the deformation of the nanowire at the free sidewalls and the associated large shear strain components. Simulated reciprocal space maps of a single (In,Ga)N/GaN nanowire demonstrate that nanofocus x-ray diffraction is a suitable technique to assess this peculiar strain state experimentally.
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Submitted 10 February, 2016;
originally announced February 2016.
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Diffraction at GaAs/Fe$_{3}$Si core/shell nanowires: the formation of nanofacets
Authors:
Bernd Jenichen,
Michael Hanke,
Maria Hilse,
Jens Herfort,
Achim Trampert,
Steven C. Erwin
Abstract:
GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets consist of well pronounced Fe$_3$Si{111} planes. Density functional theory reveals that the Si-terminated Fe$_3$Si{111} surface has the lowest energy in agreeme…
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GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets consist of well pronounced Fe$_3$Si{111} planes. Density functional theory reveals that the Si-terminated Fe$_3$Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe$_3$Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1$\overline{1}$0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe$_{3}$Si shells and GaAs cores occurring at increased growth temperatures.
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Submitted 13 April, 2016; v1 submitted 7 December, 2015;
originally announced December 2015.
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Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)
Authors:
Bernd Jenichen,
Maria Hilse,
Jens Herfort,
Achim Trampert
Abstract:
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy. The surfaces of the original GaAs NWs are completely covered by magnetic Fe3Si exhibiting nanofacets and an enhanced surface roughness compared to the bare GaAs NWs. Shell growth at a substrate temperature of T{S} =…
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GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy. The surfaces of the original GaAs NWs are completely covered by magnetic Fe3Si exhibiting nanofacets and an enhanced surface roughness compared to the bare GaAs NWs. Shell growth at a substrate temperature of T{S} = 200 °C leads to regular nanofacetted Fe3Si shells. These facets, which lead to thickness inhomogeneities of the shells, consist mainly of well pronounced Fe3Si(111) planes. The crystallographic orientation of core and shell coincide, i.e. they are pseudomorphic. The nanofacetted Fe3Si shells found in the present work are probably the result of the Vollmer-Weber island growth mode of Fe3Si on the {110} side facets of the GaAs NWs.
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Submitted 30 June, 2015; v1 submitted 6 November, 2014;
originally announced November 2014.
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Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
Authors:
Mattia Musolino,
Abbes Tahraoui,
Sergio Fernández-Garrido,
Oliver Brandt,
Achim Trampert,
Lutz Geelhaar,
Henning Riechert
Abstract:
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these laye…
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AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was investigated by scanning electron microscopy and line-of-sight quadrupole mass spectrometry, respectively. We observed that the alignment of the NWs grown on these layers improves with increasing layer thickness while their nucleation time decreases. Our results show that 4 nm is the smallest thickness of the AlN layer that allows the growth of well-aligned NWs with short nucleation time. Such an AlN buffer layer was successfully employed, together with a patterned SiOx mask, for the selective-area growth (SAG) of vertical GaN NWs. In addition, we fabricated light-emitting diodes (LEDs) from NW ensembles that were grown by means of self-organization phenomena on bare and on AlN-buffered Si substrates. A careful characterization of the optoelectronic properties of the two devices showed that the performance of NW-LEDs on bare and AlN-buffered Si is similar. Electrical conduction across the AlN buffer is facilitated by a high number of grain boundaries that were revealed by transmission electron microscopy. These results demonstrate that grainy AlN buffer layers on Si are compatible both with the SAG of GaN NWs and LED operation. Therefore, this study is a first step towards the fabrication of LEDs on Si substrates based on homogeneous NW ensembles.
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Submitted 28 October, 2014;
originally announced October 2014.
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Real structure of lattice matched GaAs-Fe3Si core-shell nanowires
Authors:
Bernd Jenichen,
Maria Hilse,
Jens Herfort,
Achim Trampert
Abstract:
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were formed on the oxide surface, and the semiconducting GaAs nanowires grew epitaxially via the vapor-liquid-solid mechanism as single-crystals from holes in the oxide f…
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GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were formed on the oxide surface, and the semiconducting GaAs nanowires grew epitaxially via the vapor-liquid-solid mechanism as single-crystals from holes in the oxide film. We observed two stages of growth of the GaAs nanowires, first the regular growth and second the residual growth after the Ga supply was finished. The magnetic Fe3Si shells were deposited in an As-free chamber. They completely cover the GaAs cores although they consist of small grains. High-resolution TEM micrographs depict the differently oriented grains in the Fe3Si shells. Selected area diffraction of electrons and XRD gave further evidence that the shells are textured and not single crystals. Facetting of the shells was observed, which lead to thickness inhomogeneities of the shells.
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Submitted 6 November, 2014; v1 submitted 13 May, 2014;
originally announced May 2014.
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Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
Authors:
E Luna,
J Grandal,
E Gallardo,
J M Calleja,
M A Sánchez-García,
E Calleja,
A Trampert
Abstract:
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specific…
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We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3 nm thick) around the InN NWs. The shell layer is composed of bcc-In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3 <110> || InN <11-20>.
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Submitted 29 September, 2014; v1 submitted 17 December, 2013;
originally announced December 2013.
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Current path in light emitting diodes based on nanowire ensembles
Authors:
Friederich Limbach,
Christian Hauswald,
Jonas Lähnemann,
Martin Wölz,
Oliver Brandt,
Achim Trampert,
Michael Hanke,
Uwe Jahn,
Raffaella Calarco,
Lutz Geelhaar,
Henning Riechert
Abstract:
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $μ$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescen…
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Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $μ$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In,Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.
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Submitted 26 October, 2012;
originally announced October 2012.
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Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces
Authors:
Esperanza Luna,
Álvaro Guzmán,
Achim Trampert,
Gabriel Álvarez
Abstract:
We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by two-dimensional island…
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We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by two-dimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.
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Submitted 10 October, 2012; v1 submitted 29 June, 2012;
originally announced June 2012.
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Macro- and micro-strain in GaN nanowires on Si(111)
Authors:
Bernd Jenichen,
Oliver Brandt,
Carsten Pfueller,
Pinar Dogan,
Mathias Knelangen,
Achim Trampert
Abstract:
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from +-0.015% to +-0.03%.This micro-strain contributes to the linewidth ob…
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We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from +-0.015% to +-0.03%.This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra.
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Submitted 12 June, 2012;
originally announced June 2012.
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Residual disorder and diffusion in thin Heusler alloy films
Authors:
Bernd Jenichen,
Jens Herfort,
Thomas Hentschel,
Andrei Nikulin,
Xiang Kong,
Achim Trampert,
Ivo Zizak
Abstract:
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and X-ray diffraction. The films contained inhomogeneous distributions of ordered L2_1 and B2 phases. The average stoichiometry was controlled by lattice parameter measurements, however diffusion processes lead to inhomogeneities of the atomic…
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Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and X-ray diffraction. The films contained inhomogeneous distributions of ordered L2_1 and B2 phases. The average stoichiometry was controlled by lattice parameter measurements, however diffusion processes lead to inhomogeneities of the atomic concentrations and the degradation of the interface, influencing long-range order. An average long-range order of 30-60% was measured by grazing-incidence X-ray diffraction, i.e. the as-grown Co2FeSi films were highly but not fully ordered. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were found using dark-field TEM images taken with superlattice reflections.
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Submitted 11 June, 2012;
originally announced June 2012.
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Direct experimental determination of the spontaneous polarization of GaN
Authors:
Jonas Lähnemann,
Oliver Brandt,
Uwe Jahn,
Carsten Pfüller,
Claudia Roder,
Pinar Dogan,
Frank Grosse,
Abderrezak Belabbes,
Friedhelm Bechstedt,
Achim Trampert,
Lutz Geelhaar
Abstract:
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN micro-crystals. By…
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We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN micro-crystals. By treating the polarization sheet charges associated with these stacking faults as a plate capacitor, Psp can be obtained from the observed transition energies with no additional assumptions. Self-consistent Poisson-Schroedinger calculations, aided by the microscopic electrostatic potential computed using density-functional theory, lead to nearly identical values for Psp. Our recommended value for Psp of GaN is -0.022+/-0.007 C/m^{2}.
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Submitted 6 August, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
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Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Authors:
Jonas Lähnemann,
Oliver Brandt,
Carsten Pfüller,
Timur Flissikowski,
Uwe Jahn,
Esperanza Luna,
Michael Hanke,
Matthias Knelangen,
Achim Trampert,
Holger T. Grahn
Abstract:
We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated by a green luminescence band that is strongly blueshifted with increasing excitation density. In conjunction with finite-element simulations of the structure to obtain the piezoelectric polarization, these results demon…
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We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated by a green luminescence band that is strongly blueshifted with increasing excitation density. In conjunction with finite-element simulations of the structure to obtain the piezoelectric polarization, these results demonstrate that our (In,Ga)N/GaN nanowire heterostructures are subject to the quantum-confined Stark effect. Additional sharp peaks in the spectra, which do not shift with excitation density, are attributed to emission from localized states created by compositional fluctuations in the ternary (In,Ga)N alloy.
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Submitted 27 September, 2011;
originally announced September 2011.
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Clustering in a precipitate free GeMn magnetic semiconductor
Authors:
D. Bougeard,
S. Ahlers,
A. Trampert,
N. Sircar,
G. Abstreiter
Abstract:
We present the first study relating structural parameters of precipitate free Ge0.95Mn0.05 films to magnetisation data. Nanometer sized clusters - areas with increased Mn content on substitutional lattice sites compared to the host matrix - are detected in transmission electron microscopy (TEM) analysis. The films show no overall spontaneous magnetisation at all down to 2K. The TEM and magnetisa…
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We present the first study relating structural parameters of precipitate free Ge0.95Mn0.05 films to magnetisation data. Nanometer sized clusters - areas with increased Mn content on substitutional lattice sites compared to the host matrix - are detected in transmission electron microscopy (TEM) analysis. The films show no overall spontaneous magnetisation at all down to 2K. The TEM and magnetisation results are interpreted in terms of an assembly of superparamagnetic moments developing in the dense distribution of clusters. Each cluster individually turns ferromagnetic below an ordering temperature which depends on its volume and Mn content.
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Submitted 9 November, 2006;
originally announced November 2006.
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Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets
Authors:
S. Ahlers,
D. Bougeard,
N. Sircar,
G. Abstreiter,
A. Trampert,
M. Opel,
R. Gross
Abstract:
We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-lo…
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We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) analysis of the films identifies the inclusions as precipitates of the ferromagnetic compound Mn_5Ge_3. The volume and amount of these precipitates decreases with decreasing T_S. Magnetometry of the films containing precipitates reveals distinct temperature ranges: Between the characteristic ferromagnetic transition temperature of Mn_5Ge_3 at approximately room temperature and a lower, T_S dependent blocking temperature T_B the magnetic properties are dominated by superparamagnetism of the Mn_5Ge_3 precipitates. Below T_B, the magnetic signature of ferromagnetic precipitates with blocked magnetic moments is observed. At the lowest temperatures, the films show features characteristic for a metastable state.
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Submitted 9 November, 2006;
originally announced November 2006.
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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
Authors:
V. M. Kaganer,
O. Brandt,
A. Trampert,
K. H. Ploog
Abstract:
We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The $q^{-3}$ decay typical for random dislocations is observed in double-crystal rocking curves. The entire profile is well fitted by a restr…
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We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The $q^{-3}$ decay typical for random dislocations is observed in double-crystal rocking curves. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained.
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Submitted 20 October, 2004;
originally announced October 2004.
