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Large-area synthesis of ferromagnetic Fe$_{5-x}$GeTe$_{2}$/graphene van der Waals heterostructures with Curie temperature above room temperature
Authors:
H. Lv,
A. da Silva,
A. I. Figueroa,
C. Guillemard,
I. Fernández Aguirre,
L. Camosi,
L. Aballe,
M. Valvidares,
S. O. Valenzuela,
J. Schubert,
M. Schmidbauer,
J. Herfort,
M. Hanke,
A. Trampert,
R. Engel-Herbert,
M. Ramsteiner,
J. M. J. Lopes
Abstract:
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly…
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Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly uniform heterostructures with well-defined interfaces between different 2D layered materials. It also requires that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, we demonstrate large-area growth of Fe$_{5-x}$GeTe$_{2}$/graphene heterostructures achieved by vdW epitaxy of Fe$_{5-x}$GeTe$_{2}$ on epitaxial graphene. Structural characterization confirmed the realization of a continuous vdW heterostructure film with a sharp interface between Fe$_{5-x}$GeTe$_{2}$ and graphene. Magnetic and transport studies revealed that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond non-scalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.
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Submitted 17 March, 2023;
originally announced March 2023.
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Experimental demonstration of a magnetically induced warping transition in a topological insulator mediated by rare-earth surface dopants
Authors:
Beatriz Muñiz Cano,
Yago Ferreiros,
Pierre A. Pantaleón,
Ji Dai,
Massimo Tallarida,
Adriana I. Figueroa,
Vera Marinova,
Kevin García Díez,
Aitor Mugarza,
Sergio O. Valenzuela,
Rodolfo Miranda,
Julio Camarero,
Francisco Guinea,
Jose Angel Silva-Guillén,
Miguel A. Valbuena
Abstract:
Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the T…
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Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type doping of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.
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Submitted 3 February, 2023;
originally announced February 2023.
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Magnetic Order in 3D Topological Insulators -- Wishful Thinking or Gateway to Emergent Quantum Effects?
Authors:
A. I. Figueroa,
T. Hesjedal,
N. -J. Steinke
Abstract:
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This topological surface state crosses the bandgap of the TI, and lives at the interface between the topological and a trivial material, such as vacuum. Despite its balance…
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Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This topological surface state crosses the bandgap of the TI, and lives at the interface between the topological and a trivial material, such as vacuum. Despite its balanced perfection, it is rather useless for any practical applications. Instead, it takes the breaking of time-reversal symmetry (TRS), and the appearance of an exchange gap to unlock hidden quantum states. The quantum anomalous Hall effect, which has first been observed in Cr-doped (Sb,Bi)$_2$Te$_3$, is an example of such a state in which two edge channels are formed at zero field, crossing the magnetic exchange gap. The breaking of TRS can be achieved by magnetic doping of the TI with transition metal or rare earth ions, modulation doping to keep the electronically active channel impurity free, or by proximity coupling to a magnetically ordered layer or substrate, in heterostructures or superlattices. We review the challenges these approaches are facing in the famous 3D TI (Sb,Bi)$_2$(Se,Te)$_3$ family, and try to answer the question whether these materials can live up to the hype surrounding them.
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Submitted 2 May, 2021;
originally announced May 2021.
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Large-area van der Waals epitaxy and magnetic characterization of Fe$_3$GeTe$_2$ films on graphene
Authors:
J. Marcelo J. Lopes,
Dietmar Czubak,
Eugenio Zallo,
Adriana I. Figueroa,
Charles Guillemard,
Manuel Valvidares,
Juan Rubio Zuazo,
Jesús López-Sanchéz,
Sergio O. Valenzuela,
Michael Hanke,
Manfred Ramsteiner
Abstract:
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe$_3$GeTe$_2$ - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism - directly on…
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Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe$_3$GeTe$_2$ - a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism - directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous Fe$_3$GeTe$_2$/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and X-ray magnetic circular dichroism investigations confirmed a robust out-of-plane ferromagnetism in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining Fe$_3$GeTe$_2$ with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices.
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Submitted 19 April, 2021;
originally announced April 2021.
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arXiv:2102.02644
[pdf]
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.str-el
cond-mat.supr-con
quant-ph
The 2021 Quantum Materials Roadmap
Authors:
Feliciano Giustino,
Jin Hong Lee,
Felix Trier,
Manuel Bibes,
Stephen M Winter,
Roser Valentí,
Young-Woo Son,
Louis Taillefer,
Christoph Heil,
Adriana I. Figueroa,
Bernard Plaçais,
QuanSheng Wu,
Oleg V. Yazyev,
Erik P. A. M. Bakkers,
Jesper Nygård,
Pol Forn-Diaz,
Silvano De Franceschi,
J. W. McIver,
L. E. F. Foa Torres,
Tony Low,
Anshuman Kumar,
Regina Galceran,
Sergio O. Valenzuela,
Marius V. Costache,
Aurélien Manchon
, et al. (4 additional authors not shown)
Abstract:
In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi…
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In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.
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Submitted 4 February, 2021;
originally announced February 2021.
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Absence of magnetic-proximity effect at the interface of Bi$_2$Se$_3$ and (Bi,Sb)$_2$Te$_3$ with EuS
Authors:
A. I. Figueroa,
F. Bonell,
M. G. Cuxart,
M. Valvidares,
P. Gargiani,
G. van der Laan,
A. Mugarza,
S. O. Valenzuela
Abstract:
We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism withi…
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We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of $\sim\!10^{-3}$ $μ_\mathrm{B}$/at.
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Submitted 26 November, 2020;
originally announced November 2020.
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Control of spin-orbit torques by interface engineering in topological insulator heterostructures
Authors:
Frédéric Bonell,
Minori Goto,
Guillaume Sauthier,
Juan F. Sierra,
Adriana I. Figueroa,
Marius V. Costache,
Shinji Miwa,
Yoshishige Suzuki,
Sergio O. Valenzuela
Abstract:
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at…
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(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss.
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Submitted 17 September, 2020;
originally announced September 2020.
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Microscopic effects of Dy-doping in the topological insulator Bi2Te3
Authors:
L. B. Duffy,
N. -J. Steinke,
J. A. Krieger,
A. I. Figueroa,
K. Kummer,
T. Lancaster,
S. R. Giblin,
F. L. Pratt,
S. J. Blundell,
T. Prokscha,
A. Suter,
S. Langridge,
V. N. Strocov,
Z. Salman,
G. van der Laan,
T. Hesjedal
Abstract:
Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. Ho…
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Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room-temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy:Bi2Te3 remained elusive. Here, we present an X-ray magnetic circular dichroism, polarized neutron reflectometry, muon spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition metal-doped layers. However, the introduction of some charge carriers by the dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these rare earth doped samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition metal doped topological insulators.
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Submitted 6 August, 2018;
originally announced August 2018.
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Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure
Authors:
A. I. Figueroa,
S. L. Zhang,
A. A. Baker,
R. Chalasani,
A. Kohn,
S. C. Speller,
D. Gianolio,
C. Pfleiderer,
G. van der Laan,
T. Hesjedal
Abstract:
We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~Å) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the mag…
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We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~Å) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature $T_\mathrm{c}$ assumes a thickness-independent enhanced value of $\geq$43~K as compared with that of bulk MnSi, where $T_\mathrm{c} \approx 29~{\rm K}$. A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111]-direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi --- except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.
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Submitted 23 November, 2016;
originally announced November 2016.
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Parimagnetism in RCo$_2$ series (R=Dy, Ho, and Tm)
Authors:
C. M. Bonilla,
J. Herrero-Albillos,
A. I. Figueroa,
C. Castan-Guerrero,
J. Bartolome,
I. Calvo-Almazan,
D. Schmitz,
E. Weschke,
L. M. García,
F. Bartolome
Abstract:
X-ray circular magnetic dichroism (XMCD), longitudinal ($χ_{ac}$) and transverse (TS) ac magnetic susceptibility have been measured in several members of the $R$Co$_2$ series ($R$ = Dy, Ho, and Tm) as a function of temperature and applied magnetic field. We show that parimagnetism is a general behavior along the $R$Co$_2$ ferrimagnetic series ($R$ being a heavy rare earth ion). XMCD results eviden…
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X-ray circular magnetic dichroism (XMCD), longitudinal ($χ_{ac}$) and transverse (TS) ac magnetic susceptibility have been measured in several members of the $R$Co$_2$ series ($R$ = Dy, Ho, and Tm) as a function of temperature and applied magnetic field. We show that parimagnetism is a general behavior along the $R$Co$_2$ ferrimagnetic series ($R$ being a heavy rare earth ion). XMCD results evidence the presence of two compensation temperatures, defining two different parimagnetic configurations, which is a fully unexpected result. The inverse $χ_{ac}$ curve exhibits a deviation from Curie-Weiss behavior which is recovered under applied magnetic field. The large excess of polarizability above the critical temperature proves the existence of an enhanced effective moment due to the presence of short range magnetic correlations, which are also observed in TS measurements. The combination of TS and XMCD measurements allows to depict new magnetic phase diagrams for the $R$Co$_2$ series. A new scenario allowing to understand the observed phenomenology as a Griffiths phase-like behavior is proposed, where the amorphous $R$Co$_2$ represents the undiluted system case.
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Submitted 4 February, 2013;
originally announced February 2013.
