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Large-area synthesis of ferromagnetic Fe$_{5-x}$GeTe$_{2}$/graphene van der Waals heterostructures with Curie temperature above room temperature
Authors:
H. Lv,
A. da Silva,
A. I. Figueroa,
C. Guillemard,
I. Fernández Aguirre,
L. Camosi,
L. Aballe,
M. Valvidares,
S. O. Valenzuela,
J. Schubert,
M. Schmidbauer,
J. Herfort,
M. Hanke,
A. Trampert,
R. Engel-Herbert,
M. Ramsteiner,
J. M. J. Lopes
Abstract:
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly…
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Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly uniform heterostructures with well-defined interfaces between different 2D layered materials. It also requires that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, we demonstrate large-area growth of Fe$_{5-x}$GeTe$_{2}$/graphene heterostructures achieved by vdW epitaxy of Fe$_{5-x}$GeTe$_{2}$ on epitaxial graphene. Structural characterization confirmed the realization of a continuous vdW heterostructure film with a sharp interface between Fe$_{5-x}$GeTe$_{2}$ and graphene. Magnetic and transport studies revealed that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond non-scalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.
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Submitted 17 March, 2023;
originally announced March 2023.
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Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons
Authors:
Daniel Rosenbach,
Kristof Moors,
Abdur R. Jalil,
Jonas Kölzer,
Erik Zimmermann,
Jürgen Schubert,
Soraya Karimzadah,
Gregor Mussler,
Peter Schüffelgen,
Detlev Grützmacher,
Hans Lüth,
Thomas Schäpers
Abstract:
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berr…
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Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices.
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Submitted 8 February, 2022; v1 submitted 7 April, 2021;
originally announced April 2021.
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a-axis YBa2Cu3O7-x/PrBa2Cu3O7-x/YBa2Cu3O7-x trilayers with subnanometer rms roughness
Authors:
Y. Eren Suyolcu,
Jiaxin Sun,
Berit H. Goodge,
Jisung Park,
Jürgen Schubert,
Lena F. Kourkoutis,
Darrell G. Schlom
Abstract:
We demonstrate a-axis YBa2Cu3O7-x/PrBa2Cu3O7-x/YBa2Cu3O7-x trilayers grown on (100) LaAlO3 substrates with improved interface smoothness. The trilayers are synthesized by ozone-assisted molecular-beam epitaxy. The thickness of the PrBa2Cu3O7-x layer is held constant at 8 nm and the thickness of the YBa2Cu3O7-x layers is varied from 24 nm to 100 nm. X-ray diffraction measurements show all trilayers…
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We demonstrate a-axis YBa2Cu3O7-x/PrBa2Cu3O7-x/YBa2Cu3O7-x trilayers grown on (100) LaAlO3 substrates with improved interface smoothness. The trilayers are synthesized by ozone-assisted molecular-beam epitaxy. The thickness of the PrBa2Cu3O7-x layer is held constant at 8 nm and the thickness of the YBa2Cu3O7-x layers is varied from 24 nm to 100 nm. X-ray diffraction measurements show all trilayers to have >95% a-axis content. The rms roughness of the thinnest trilayer is < 0.7 nm and this roughness increases with the thickness of the YBa2Cu3O7-x layers. The thickness of the YBa2Cu3O7-x layers also affects the transport properties: while all samples exhibit an onset of the superconducting transition at and above 85 K, the thinner samples show wider transition widths, ΔTc. High-resolution scanning transmission electron microscopy reveals coherent and chemically sharp interfaces, and that growth begins with a cubic (Y,Ba)CuO3-x perovskite phase that transforms into a-axis oriented YBa2Cu3O7-x as the substrate temperature is ramped up.
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Submitted 23 October, 2020;
originally announced October 2020.
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Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise
Authors:
Felix Jekat,
Benjamin Pestka,
Diana Car,
Saša Gazibegović,
Kilian Flöhr,
Sebastian Heedt,
Jürgen Schubert,
Marcus Liebmann,
Erik P. A. M. Bakkers,
Thomas Schäpers,
Markus Morgenstern
Abstract:
We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to…
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We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.
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Submitted 22 June, 2020; v1 submitted 23 January, 2020;
originally announced January 2020.
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Electric-field control of magnetism in iron oxide nanoparticle / BaTiO3 film composites
Authors:
L. -M. Wang,
O. Petracic,
J. Schubert,
Th. Brückel
Abstract:
We study composites of monodisperse ferrimagnetic nanoparticles (NPs) embedded into ferroelectric barium titanate (BTO) films. The BTO films were prepared by pulsed laser deposition. The composite consists of a stack of two BTO films sandwiching one monolayer of iron oxide NPs. We observe a magnetoelectric coupling due to strain and interface charge co-mediation between the BTO and the NPs. This i…
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We study composites of monodisperse ferrimagnetic nanoparticles (NPs) embedded into ferroelectric barium titanate (BTO) films. The BTO films were prepared by pulsed laser deposition. The composite consists of a stack of two BTO films sandwiching one monolayer of iron oxide NPs. We observe a magnetoelectric coupling due to strain and interface charge co-mediation between the BTO and the NPs. This is demonstrated by measurements of the magnetization as function of DC and AC electric fields.
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Submitted 9 October, 2019;
originally announced October 2019.
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Local Photothermal Control of Phase Transitions for On-demand Room-temperature Rewritable Magnetic Patterning
Authors:
Antonio B. Mei,
Isaiah Gray,
Yongjian Tang,
Jurgen Schubert,
Don Werder,
Jason Bartell,
Daniel C. Ralph,
Gregory D. Fuchs,
Darrell G. Schlom
Abstract:
The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices, allow the creation of artificial spin-ice lattices and enable the study of magnon propagation. Here, we report a novel approach for magnetic patterning that all…
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The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices, allow the creation of artificial spin-ice lattices and enable the study of magnon propagation. Here, we report a novel approach for magnetic patterning that allows repeated creation and erasure of arbitrary shapes of thin-film ferromagnetic structures. This strategy is enabled by epitaxial Fe$_{0.52}$Rh$_{0.48}$ thin films designed so that both ferromagnetic and antiferromagnetic phases are bistable at room temperature. Starting with the film in a uniform antiferromagnetic state, we demonstrate the ability to write arbitrary patterns of the ferromagnetic phase by local heating with a focused laser. If desired, the results can then be erased by cooling with a thermoelectric cooler and the material repeatedly re-patterned.
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Submitted 17 June, 2019;
originally announced June 2019.
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Structural properties and anisotropic electronic transport in SrIrO3 films
Authors:
K. R. Kleindienst,
K. Wolff,
J. Schubert,
R. Schneider,
D. Fuchs
Abstract:
Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like orthorhombic structure. However, film deposition on cubic (001) SrTiO3 induces a twinned growth of SIO. Resistance measurements on the SIO films reveal only we…
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Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like orthorhombic structure. However, film deposition on cubic (001) SrTiO3 induces a twinned growth of SIO. Resistance measurements on the SIO films reveal only weak temperature dependence, where the resistance R increases with decreasing temperature T. Hall measurements show dominant electron-like transport throughout the temperature range from 2 K to 300 K. At 2 K, the electron concentration and resistivity for SIO on STO amount to ne = 1.4*10^20 cm-3 and 1 mohmcm. Interestingly, the film resistance of untwinned SIO on DSO along the [1-10] and the [001] direction differs by up to 25% indicating pronounced anisotropic electronic transport. The anisotropy of the resistance increases with decreasing T and displays a distinct maximum around 86 K. The specific T-dependence is similar to that of the structural anisotropy sqrt(a2+b2)/c of bulk SIO. Therefore, anisotropic electronic transport in SIO is very likely induced by the orthorhombic distortion. Consequently, for twinned SIO films on STO anisotropy vanishes nearly completely. The experimental results show that structural changes are very likely responsible for the observed anisotropic electronic transport. The strong sensitivity of the electronic transport in SIO films may be explained in terms of the narrow electron-like bands in SIO caused by spin-orbit-coupling and orthorhombic distortion.
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Submitted 29 August, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Engineering of Neutral Excitons and Exciton Complexes in Transition Metal Dichalcogenide Monolayers through External Dielectric Screening
Authors:
Sven Borghardt,
Jhih-Sian Tu,
Florian Winkler,
Jürgen Schubert,
Willi Zander,
Kristján Lesson,
Beata E. Kardynał
Abstract:
In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding materia…
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In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding materials. For the realization of this non-invasive approach, an in-depth understanding of such dielectric effects is required. We report on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environments including low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for the optical band gaps of WSe 2 and MoSe 2 MLs and relative tuning ranges on the order of 30% for the binding energies of neutral excitons in WSe 2 MLs. The findings suggest the possibility to reduce the electronic band gap of WSe 2 MLs by 120 meV, paving the way towards dielectrically defined lateral heterojunctions.
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Submitted 29 May, 2017;
originally announced May 2017.
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Signatures of interaction-induced helical gaps in nanowire quantum point contacts
Authors:
S. Heedt,
N. Traverso Ziani,
F. Crépin,
W. Prost,
St. Trellenkamp,
J. Schubert,
D. Grützmacher,
B. Trauzettel,
Th. Schäpers
Abstract:
Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Her…
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Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Here, we report the first direct experimental observations of the reentrant conductance feature, which reveals the formation of a helical liquid, in the lowest 1D subband of an InAs nanowire. Surprisingly, the feature is very prominent also in the absence of magnetic fields. This behaviour suggests that exchange interaction exhibits substantial impact on transport in our device. We attribute the opening of the pseudogap to spin-flipping two-particle backscattering. The all-electric origin of the ideal helical transport bears momentous implications for topological quantum computing.
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Submitted 29 January, 2017;
originally announced January 2017.
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Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
Authors:
C. Weyrich,
M. Drögeler,
J. Kampmeier,
M. Eschbach,
G. Mussler,
T. Merzenich,
T. Stoica,
I. E. Batov,
J. Schubert,
L. Plucinski,
B. Beschoten,
C. M. Schneider,
C. Stampfer,
D. Grützmacher,
Th. Schäpers
Abstract:
Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the…
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Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.
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Submitted 18 October, 2016; v1 submitted 3 November, 2015;
originally announced November 2015.
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Epitaxial Growth of VO$_{2}$ by Periodic Annealing
Authors:
J. W. Tashman,
J. H. Lee,
H. Paik,
J. A. Moyer,
R. Misra,
J. A. Mundy,
T. Spila,
T. A. Merz,
J. Schubert,
D. A. Muller,
P. Schiffer,
D. G. Schlom
Abstract:
We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 wa…
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We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.
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Submitted 27 January, 2014; v1 submitted 18 October, 2013;
originally announced October 2013.
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LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Authors:
M. P. Warusawithana,
C. Richter,
J. A. Mundy,
P. Roy,
J. Ludwig,
S. Paetel,
T. Heeg,
A. A. Pawlicki,
L. F. Kourkoutis,
M. Zheng,
M. Lee,
B. Mulcahy,
W. Zander,
Y. Zhu,
J. Schubert,
J. N. Eckstein,
D. A. Muller,
C. Stephen Hellberg,
J. Mannhart,
D. G. Schlom
Abstract:
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the…
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Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery.
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Submitted 20 March, 2013;
originally announced March 2013.
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Linear and Nonlinear Optical constants of BiFeO_3
Authors:
Amit Kumar,
R. Rai,
Nikolas Podraza,
Sava Denev,
Mariola Ramirez,
Ying-Hao Chu,
Jon Ihlefeld,
Tassilo Heeg,
Jurgen Schubert,
Darrell Schlom,
Joseph Orenstein,
R. Ramesh,
Robert Collins,
Janice Musfeldt,
Venkatraman Gopalan
Abstract:
Using spectroscopic ellipsometry, the refractive index and absorption versus wavelength of the ferroelectric antiferromagnet Bismuth Ferrite, BiFeO_3 is reported. The material has a direct band-gap at 442 nm wavelength (2.81 eV). Using optical second harmonic generation, the nonlinear optical coefficients were determined to be d_15/d_22 = 0.20 +/- 0.01, d_31/d_22 = 0.35 +/- 0.02, d_33/d_22 = -11…
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Using spectroscopic ellipsometry, the refractive index and absorption versus wavelength of the ferroelectric antiferromagnet Bismuth Ferrite, BiFeO_3 is reported. The material has a direct band-gap at 442 nm wavelength (2.81 eV). Using optical second harmonic generation, the nonlinear optical coefficients were determined to be d_15/d_22 = 0.20 +/- 0.01, d_31/d_22 = 0.35 +/- 0.02, d_33/d_22 = -11.4 +/- 0.20 and |d_22| = 298.4 +/- 6.1 pm/V at a fundamental wavelength of 800 nm.
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Submitted 10 January, 2008;
originally announced January 2008.
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Energy gap and London penetration depth of MgB_2 films determined by microwave resonator measurement
Authors:
N. Klein,
B. B. Jin,
J. Schubert,
M. Schuster,
H. R. Yi,
A. Pimenov,
A. Loidl,
S. I. Krasnosvobodtsev
Abstract:
We have measured the temperature dependence of the microwave surface impedance Z_s = R_s + iΩμ_0 of a MgB2 film at a frequency Ω/2Πof 18 GHz employing a dielectric resonator technique. We found that the temperature dependence of the magnetic field penetration depth \Lamda can be fitted by \Lamda(T)= \Lamda(0) [1-(T/Tc)^2] ^(-1/2) with \Lamda(0)=(260 +/- 20)nm. The absolute value of \Lamda(0) was…
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We have measured the temperature dependence of the microwave surface impedance Z_s = R_s + iΩμ_0 of a MgB2 film at a frequency Ω/2Πof 18 GHz employing a dielectric resonator technique. We found that the temperature dependence of the magnetic field penetration depth \Lamda can be fitted by \Lamda(T)= \Lamda(0) [1-(T/Tc)^2] ^(-1/2) with \Lamda(0)=(260 +/- 20)nm. The absolute value of \Lamda(0) was confirmed by direct measurements employing submillimeter wave transmission spectroscopy at 430 GHz. The analysis of the \Lamda(T) data below Tc/2 revealed significant deviations from the quadratic temperature dependence. In contrast, we found that an exponential temperature dependence fits the experimental data within the statistical measurement error for temperature changes of \Lamda of +/- 0.4 nm. This observation indicates thermal excitation of quasiparticles over a finite energy gap of (3.3 +/- 0.3) meV corresponding to Δ/kTc = 1.2 +/- 0.1. Our results strongly supports a multipgap or a strongly anisotropic gap and the absence of nodes in the gap function.
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Submitted 12 July, 2001;
originally announced July 2001.
