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An accurate and transferable machine learning interatomic potential for equimolar and non-equimolar high-entropy diborides
Authors:
Hong Meng,
Yiwen Liu,
Hulei Yu,
Lei Zhuang,
Yanhui Chu
Abstract:
Machine learning interatomic potentials have become a powerful tool to achieve molecular dynamics (MD) simulations with the accuracy of ab initio methods while beyond their length and timescale limitations. Here, we develop an efficient moment tensor potential (MTP) for high-entropy diborides (HEBs) based on unary and binary diborides with Ti-V-Cr-Zr-Nb-Mo-Hf-Ta-W principal elements. Notably, the…
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Machine learning interatomic potentials have become a powerful tool to achieve molecular dynamics (MD) simulations with the accuracy of ab initio methods while beyond their length and timescale limitations. Here, we develop an efficient moment tensor potential (MTP) for high-entropy diborides (HEBs) based on unary and binary diborides with Ti-V-Cr-Zr-Nb-Mo-Hf-Ta-W principal elements. Notably, the trained MTP exhibits exceptional generalization across both equimolar and non-equimolar HEBs, with testing errors in energy and force of 2.6 meV/atom and 155 meV/Å for equimolar HEBs, and 3.7 meV/atom and 172 meV/Å for non-equimolar HEBs, respectively, indicating its remarkable accuracy and transferability. The reliability of the established MTP is further confirmed by a comparative analysis with first-principles calculations, where our MTP accurately reproduces the structural and mechanical properties of various HEBs. The work presents a significant advancement in the simulation of high-entropy ceramics with enhanced efficiency and accuracy.
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Submitted 12 June, 2024;
originally announced June 2024.
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An efficient strategy to construct general machine learning potentials for high-entropy ceramics
Authors:
Yiwen Liu,
Hong Meng,
Zijie Zhu,
Hulei Yu,
Lei Zhuang,
Yanhui Chu
Abstract:
Molecular dynamics (MD) simulations are considered an efficient and low-cost means to develop remarkable properties of high-entropy ceramics with vast composition space, yet the lack of general potentials severely limits their applications. Herein, taking high-entropy carbides (HECs) as the model, we propose a strategy to efficiently construct a general neuroevolution potential (NEP) with broad co…
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Molecular dynamics (MD) simulations are considered an efficient and low-cost means to develop remarkable properties of high-entropy ceramics with vast composition space, yet the lack of general potentials severely limits their applications. Herein, taking high-entropy carbides (HECs) as the model, we propose a strategy to efficiently construct a general neuroevolution potential (NEP) with broad compositional applicability for HECs. Specifically, the small dataset comprising unary and binary carbides with ten transition metal principal elements is first identified as the most efficient choice to train the general NEP for HECs, and then a highly accurate and transferable NEP is constructed. Further MD predictions on structural, mechanical, and thermal properties of HECs using the established NEP show good agreement with the results of first-principles calculations and experimental measurements, validating the accuracy, generalization, and reliability of our developed NEP. Our work provides an efficient solution to accelerating the MD simulations searching for high-entropy ceramics with desirable properties.
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Submitted 18 June, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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The effect of niobium thin film structure on losses in superconducting circuits
Authors:
Maxwell Drimmer,
Sjoerd Telkamp,
Felix L. Fischer,
Ines C. Rodrigues,
Clemens Todt,
Filip Krizek,
Dominik Kriegner,
Christoph Müller,
Werner Wegscheider,
Yiwen Chu
Abstract:
The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the…
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The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over one million at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and demonstrate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors.
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Submitted 18 March, 2024;
originally announced March 2024.
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Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice
Authors:
Yalong Yuan,
Le Liu,
Jundong Zhu,
Jingwei Dong,
Yanbang Chu,
Fanfan Wu,
Luojun Du,
Kenji Watanabe,
Takashi Taniguchi,
Dongxia Shi,
Guangyu Zhang,
Wei Yang
Abstract:
Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer graphene (TDBG). We observe two different QOs at low temperature, one with a periodicity in carrier density (n), i.e. Shubnikov de Haas oscillation (SdHO) due to Landa…
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Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer graphene (TDBG). We observe two different QOs at low temperature, one with a periodicity in carrier density (n), i.e. Shubnikov de Haas oscillation (SdHO) due to Landau quantization, and the other one in displacement field (D), resulting a grid pattern. We quantify the interlayer coupling strength by measuring the interlayer capacitance from the grid pattern with a capacitance model, revealing an electron hole asymmetry. At high temperature when SdHO are thermal smeared, we observe resistance peaks when LLs from two minivalleys in the moiré Brillion zone are aligned, regardless of carrier density; eventually, it results in a two fold increase of oscillating frequency in D, serving as a smoking gun evidence of the magneto intersubband oscillations (MISO) in a double layer system. The temperature dependence of MISO suggests electron-electron interaction between two minivalleys play a crucial rule in the scattering, and the scattering times obtained from MISO thermal damping are found to be correlated with the interlayer coupling strength. Our study reveals an intriguing interplay among Landau quantization, moiré band structure, and scatterings.
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Submitted 22 January, 2024;
originally announced January 2024.
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Unrevealing hardening and strengthening mechanisms in high-entropy ceramics from lattice distortion
Authors:
Yiwen Liu,
Haifeng Tang,
Mengdong Ma,
Hulei Yu,
Zhongyu Tang,
Yanhui Chu
Abstract:
Revealing the hardening and strengthening mechanisms is crucial for facilitating the design of superhard and high-strength high-entropy ceramics (HECs). Here, we take high-entropy diborides (HEB$_2$) as the prototype to thoroughly investigate the hardening and strengthening mechanisms of HECs. Specifically, the equiatomic 4- to 9-cation single-phase HEB$_2$ ceramics (4-9HEB$_2$) are fabricated by…
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Revealing the hardening and strengthening mechanisms is crucial for facilitating the design of superhard and high-strength high-entropy ceramics (HECs). Here, we take high-entropy diborides (HEB$_2$) as the prototype to thoroughly investigate the hardening and strengthening mechanisms of HECs. Specifically, the equiatomic 4- to 9-cation single-phase HEB$_2$ ceramics (4-9HEB$_2$) are fabricated by an ultra-fast high-temperature sintering method. The as-fabricated 4-9HEB$_2$ samples possess similar grain sizes, comparable relative densities (up to ~98%), uniform compositions, and clean grain boundaries without any impurities. The experimental results show that the hardness and flexural strength of the as-fabricated 4-9HEB$_2$ samples have an increasing tendency with the increase of metal components. The first-principles calculations find that lattice distortion is essential to the hardness and strength of HEB$_2$. With the increase of metal components, an aggravation of lattice distortion accompanied by B-B bond strengthening is determined, resulting in the enhancement of the hardness and flexural strength. Moreover, the correlation between other potential indicators and the hardness/flexural strength of HEB$_2$ has been disproved, including valence electron concentration, electronegativity mismatch, and metallic states. Our results unravel the hardening and strengthening mechanisms of HECs by intensifying lattice distortion, which may provide guidance for developing superhard and high-strength HECs.
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Submitted 15 December, 2023;
originally announced December 2023.
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Giant X-ray circular dichroism in a time-reversal invariant altermagnet
Authors:
Jun Okamoto,
Ru-Pan Wang,
Yen-Yi Chu,
Hung-Wei Shiu,
Amol Singh,
Hsiao-Yu Huang,
Chung-Yu Mou,
Sucitto Teh,
Horng-Tay Jeng,
Kai Du,
Xianghan Xu,
Sang-Wook Cheong,
Chao-Hung Du,
Chien-Te Chen,
Atsushi Fujimori,
Di-Jing Huang
Abstract:
X-ray circular dichroism, arising from the contrast in X-ray absorption between opposite photon helicities, serves as a spectroscopic tool to measure the magnetization of ferromagnetic materials and identify the handedness of chiral crystals. Antiferromagnets with crystallographic chirality typically lack X-ray magnetic circular dichroism because of time-reversal symmetry, yet exhibit weak X-ray n…
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X-ray circular dichroism, arising from the contrast in X-ray absorption between opposite photon helicities, serves as a spectroscopic tool to measure the magnetization of ferromagnetic materials and identify the handedness of chiral crystals. Antiferromagnets with crystallographic chirality typically lack X-ray magnetic circular dichroism because of time-reversal symmetry, yet exhibit weak X-ray natural circular dichroism. Here, we report the observation of giant natural circular dichroism in the Ni $L_3$-edge X-ray absorption of Ni$_3$TeO$_6$, a polar and chiral antiferromagnet with effective time-reversal symmetry. To unravel this intriguing phenomenon, we propose a phenomenological model that classifies the movement of photons in a chiral crystal within the same symmetry class as that of a magnetic field. The coupling of X-ray polarization with the induced magnetization yields giant X-ray natural circular dichroism, revealing the altermagnetism of Ni$_3$TeO$_6$. Our findings provide evidence for the interplay between magnetism and crystal chirality in natural optical activity. Additionally, we establish the first example of a new class of magnetic materials exhibiting circular dichroism with time-reversal symmetry.
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Submitted 23 February, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Quasiparticle dynamics in a superconducting qubit irradiated by a localized infrared source
Authors:
Rodrigo Benevides,
Maxwell Drimmer,
Giacomo Bisson,
Francesco Adinolfi,
Uwe von Lüpke,
Hugo Michiel Doeleman,
Gianluigi Catelani,
Yiwen Chu
Abstract:
A known source of decoherence in superconducting qubits is the presence of broken Cooper pairs, or quasiparticles. These can be generated by high-energy radiation, either present in the environment or purposefully introduced, as in the case of some hybrid quantum devices. Here, we systematically study the properties of a transmon qubit under illumination by focused infrared radiation with various…
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A known source of decoherence in superconducting qubits is the presence of broken Cooper pairs, or quasiparticles. These can be generated by high-energy radiation, either present in the environment or purposefully introduced, as in the case of some hybrid quantum devices. Here, we systematically study the properties of a transmon qubit under illumination by focused infrared radiation with various powers, durations, and spatial locations. Despite the high energy of incident photons, our observations agree well with a model of low-energy quasiparticle dynamics dominated by trapping. This technique can be used for understanding and potentially mitigating the effects of high-energy radiation on superconducting circuits with a variety of geometries and materials.
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Submitted 10 December, 2023;
originally announced December 2023.
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Room-temperature correlated states in twisted bilayer MoS$_2$
Authors:
Fanfan Wu,
Qiaoling Xu,
Qinqin Wang,
Yanbang Chu,
Lu Li,
Jian Tang,
Jieying Liu,
Jinpeng Tian,
Yiru Ji,
Le Liu,
Yalong Yuan,
Zhiheng Huang,
Jiaojiao Zhao,
Xiaozhou Zan,
Kenji Watanabe,
Takashi Taniguchi,
Dongxia Shi,
Gangxu Gu,
Yang Xu,
Lede Xian,
Wei Yang,
Luojun Du,
Guangyu Zhang
Abstract:
Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator i…
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Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator in AB-stacked MoS$_2$ homo-bilayer moiré superlattices. Correlated insulating states at moiré band filling factors v = 1, 2, 3 are unambiguously established in twisted bilayer MoS$_2$. Remarkably, the correlated electronic states can persist up to a record-high critical temperature of over 285 K. The realization of room-temperature correlated states in twisted bilayer MoS$_2$ can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large non-linear Hall responses up to room-temperature are uncovered near correlated insulating states, demonstrating the quantum geometry of moiré flat conduction band.
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Submitted 28 November, 2023;
originally announced November 2023.
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Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy
Authors:
Mateus G. Masteghin,
Toussaint Gervais,
Steven K. Clowes,
David C. Cox,
Veronika Zelyk,
Ajith Pattammattel,
Yong S. Chu,
Nikola Kolev,
Taylor Z. Stock,
Neil Curson,
Paul G. Evans,
Michael Stuckelberger,
Benedict N. Murdin
Abstract:
We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very high sensitivity and resolution. We investigated gallium (Ga) dopants in silicon (Si) produced by a focused ion beam (FIB). These dopants might provide 3/2-spin qubits or p-type electrical contacts and quantum dots. We find…
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We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very high sensitivity and resolution. We investigated gallium (Ga) dopants in silicon (Si) produced by a focused ion beam (FIB). These dopants might provide 3/2-spin qubits or p-type electrical contacts and quantum dots. We find that the ion beam spot is somewhat larger than expected, and the technique provides a useful calibration for the resolution of FIBs. Enticingly, we demonstrate that with a single shot detection of 1 second integration time, the sensitivity of the XRF would be sufficient to find amongst background a single isolated inclusion of unknown location comprising only 3000 Ga impurities (a mass of just 350 zg) without any need for specialized nm-thickness lamellae, and down from >105 atoms in previous reports of similar work. With increased integration we were able to detect 650 impurities. The results show that planned facility upgrades might achieve single atom sensitivity with a generally applicable, non-destructive technique in the near future.
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Submitted 5 October, 2023;
originally announced October 2023.
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Observation of first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene
Authors:
Le Liu,
Xin Lu,
Yanbang Chu,
Guang Yang,
Yalong Yuan,
Fanfan Wu,
Yiru Ji,
Jinpeng Tian,
Kenji Watanabe,
Takashi Taniguchi,
Luojun Du,
Dongxia Shi,
Jianpeng Liu,
Jie Shen,
Li Lu,
Wei Yang,
Guangyu Zhang
Abstract:
Twisted graphene multilayers are highly tunable flatband systems for developing new phases of matter. Thus far, while orbital ferromagnetism has been observed in valley polarized phases, the long-range orders of other correlated phases as well as the quantum phase transitions between different orders mostly remain unknown. Here, we report an observation of Coulomb interaction driven first-order qu…
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Twisted graphene multilayers are highly tunable flatband systems for developing new phases of matter. Thus far, while orbital ferromagnetism has been observed in valley polarized phases, the long-range orders of other correlated phases as well as the quantum phase transitions between different orders mostly remain unknown. Here, we report an observation of Coulomb interaction driven first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene (TDBG). At zero magnetic field, the transitions are revealed in a series of step-like abrupt resistance jumps with prominent hysteresis loop when either the displacement field (D) or the carrier density (n) is tuned across symmetry-breaking boundary near half filling, indicating a formation of ordered domains. It is worth noting that the good turnability and switching of these states gives a rise to a memory performance with a large on/off ratio. Moreover, when both spin and valley play the roles at finite magnetic field, we observe abundant first-order quantum phase transitions among normal metallic states from charge neutral point, orbital ferromagnetic states from quarter filling, and spin-polarized states from half filling. We interpret these first-order phase transitions in the picture of phase separations and spin domain percolations driven by multi-field tunable Coulomb interactions, in agreement with Lifshitz transition from Hartree-Fock calculations. The observed multi-filed tunable domain structure and its hysteresis resembles the characteristics of multiferroics, revealing intriguing magnetoelectric properties. Our result enriches the correlated phase diagram in TDBG for discovering novel exotic phases and quantum phase transitions, and it would benefit other twisted moiré systems as well.
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Submitted 24 June, 2023;
originally announced June 2023.
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Initial value formulation of a quantum damped harmonic oscillator
Authors:
Nishant Agarwal,
Yi-Zen Chu
Abstract:
The in-in formalism and its influence functional generalization are widely used to describe the out-of-equilibrium dynamics of unitary and open quantum systems, respectively. In this paper, we build on these techniques to develop an effective theory of a quantum damped harmonic oscillator and use it to study initial state-dependence, decoherence, and thermalization. We first consider a Gaussian in…
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The in-in formalism and its influence functional generalization are widely used to describe the out-of-equilibrium dynamics of unitary and open quantum systems, respectively. In this paper, we build on these techniques to develop an effective theory of a quantum damped harmonic oscillator and use it to study initial state-dependence, decoherence, and thermalization. We first consider a Gaussian initial state and quadratic influence functional and obtain general equations for the Green's functions of the oscillator. We solve the equations in the specific case of time-local dissipation and use the resulting Green's functions to obtain the purity and unequal-time two-point correlations of the oscillator. We find that the dynamics must include a non-vanishing noise term to yield physical results for the purity and that the oscillator decoheres in time such that the late-time density operator is thermal. We show that the frequency spectrum or unequal-time correlations can, however, distinguish between the damped oscillator and an isolated oscillator in thermal equilibrium, and obtain a generalized fluctuation-dissipation relation for the damped oscillator. We briefly consider time-nonlocal dissipation as well, to show that the fluctuation-dissipation relation is satisfied for a specific choice of dissipation kernels. Lastly, we develop a double in-out path integral approach to go beyond Gaussian initial states and show that our equal-time results for time-local dissipation are in fact non-perturbative in the initial state.
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Submitted 6 May, 2024; v1 submitted 8 March, 2023;
originally announced March 2023.
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Unified simulation methods for quantum acoustic devices
Authors:
Hugo Banderier,
Maxwell Drimmer,
Yiwen Chu
Abstract:
In circuit quantum acoustodynamics (cQAD), superconducting circuits are combined with acoustic resonators to create and control non-classical states of mechanical motion. Simulating these systems is challenging due to the extreme difference in scale between the microwave and mechanical wavelengths. All existing techniques simulate the electromagnetic and mechanical subsystems separately. However,…
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In circuit quantum acoustodynamics (cQAD), superconducting circuits are combined with acoustic resonators to create and control non-classical states of mechanical motion. Simulating these systems is challenging due to the extreme difference in scale between the microwave and mechanical wavelengths. All existing techniques simulate the electromagnetic and mechanical subsystems separately. However, this approach may not be adequate for all cQAD devices. Here, we demonstrate a single simulation of a superconducting qubit coupled to an acoustic and a microwave resonator and introduce two methods for using this simulation to predict the frequencies, coupling rates, and energy-participation ratios of the electromechanical modes of the hybrid system. We also discuss how these methods can be used to investigate important dissipation channels and quantify the nontrivial effects of mode hybridization in our device. Our methodology is flexible and can be extended to other acoustic resonators and quantum degrees of freedom, providing a valuable new tool for designing hybrid quantum systems.
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Submitted 12 January, 2023;
originally announced January 2023.
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An emergent quasi-2D metallic state derived from the Mott insulator framework
Authors:
P. -C. Chiang,
S. C. Lin,
C. -Y. Chiang,
C. -S. Ku,
S. W. Huang,
J. M. Lee,
Y. -D. Chuang,
H. J. Lin,
Y. F. Liao,
C. -M. Cheng,
S. C. Haw,
J. M. Chen,
Y. -H. Chu,
T. H. Do,
C. W. Luo,
J. -Y. Juang,
K. H. Wu,
Y. -W. Chang,
J. -C. Yang,
J. -Y. Lin
Abstract:
Recent quasi-2D systems with judicious exploitation of the atomic monolayer or few-layer architecture exhibit unprecedented physical properties that challenge the conventional wisdom on the condensed matter physics. Here we show that the infinite layer SrCuO2 (SCO), a topical cuprate Mott insulator in the bulk form, can manifest an unexpected metallic state in the quasi-2D limit when SCO is grown…
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Recent quasi-2D systems with judicious exploitation of the atomic monolayer or few-layer architecture exhibit unprecedented physical properties that challenge the conventional wisdom on the condensed matter physics. Here we show that the infinite layer SrCuO2 (SCO), a topical cuprate Mott insulator in the bulk form, can manifest an unexpected metallic state in the quasi-2D limit when SCO is grown on TiO2-terminated SrTiO3 (STO) substrates. Hard x-ray core-level photoemission spectra demonstrate a definitive Fermi level that resembles the hole doped metal. Soft x-ray absorption spectroscopy also reveals features analogous to those of a hole doped Mott insulator. Based on these results, we conclude that the hole doping does not occur at the interfaces between SCO and STO; instead, it comes from the transient layers between the chain type and the planar type structures within the SCO slab. The present work reveals a novel metallic state in the infinite layer SCO and invites further examination to elucidate the spatial extent of this state.
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Submitted 14 December, 2022;
originally announced December 2022.
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Schrödinger cat states of a 16-microgram mechanical oscillator
Authors:
Marius Bild,
Matteo Fadel,
Yu Yang,
Uwe von Lüpke,
Phillip Martin,
Alessandro Bruno,
Yiwen Chu
Abstract:
The superposition principle is one of the most fundamental principles of quantum mechanics. According to the Schrödinger equation, a physical system can be in any linear combination of its possible states. While the validity of this principle is routinely validated for microscopic systems, it is still unclear why we do not observe macroscopic objects to be in superpositions of states that can be d…
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The superposition principle is one of the most fundamental principles of quantum mechanics. According to the Schrödinger equation, a physical system can be in any linear combination of its possible states. While the validity of this principle is routinely validated for microscopic systems, it is still unclear why we do not observe macroscopic objects to be in superpositions of states that can be distinguished by some classical property. Here we demonstrate the preparation of a mechanical resonator with an effective mass of 16.2 micrograms in Schrödinger cat states of motion, where the constituent atoms are in a superposition of oscillating with two opposite phases. We show control over the size and phase of the superposition and investigate the decoherence dynamics of these states. Apart from shedding light at the boundary between the quantum and the classical world, our results are of interest for quantum technologies, as they pave the way towards continuous-variable quantum information processing and quantum metrology with mechanical resonators.
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Submitted 1 November, 2022;
originally announced November 2022.
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Simultaneous Brillouin and piezoelectric coupling to a high-frequency bulk acoustic resonator
Authors:
Taekwan Yoon,
David Mason,
Vijay Jain,
Yiwen Chu,
Prashanta Kharel,
William H. Renninger,
Liam Collins,
Luigi Frunzio,
Robert J Schoelkopf,
Peter T Rakich
Abstract:
Bulk acoustic resonators support robust, long-lived mechanical modes, capable of coupling to various quantum systems. In separate works, such devices have achieved strong coupling to both superconducting qubits, via piezoelectricity, and optical cavities, via Brillouin interactions. In this work, we present a novel hybrid microwave/optical platform capable of coupling to bulk acoustic waves throug…
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Bulk acoustic resonators support robust, long-lived mechanical modes, capable of coupling to various quantum systems. In separate works, such devices have achieved strong coupling to both superconducting qubits, via piezoelectricity, and optical cavities, via Brillouin interactions. In this work, we present a novel hybrid microwave/optical platform capable of coupling to bulk acoustic waves through cavity-enhanced piezoelectric and photoelastic interactions. The modular, tunable system achieves fully resonant and well-mode-matched interactions between a 3D microwave cavity, a high-frequency bulk acoustic resonator, and a Fabry Perot cavity. We realize this piezo-Brillouin interaction in x-cut quartz, demonstrating the potential for strong optomechanical interactions and high cooperativity using optical cavity enhancement. We further show how this device functions as a bidirectional electro-opto-mechanical transducer, with quantum efficiency exceeding $10^{-8}$, and a feasible path towards unity conversion efficiency. The high optical sensitivity and ability to apply large resonant microwave field in this system also offers a new tool for probing anomalous electromechanical couplings, which we demonstrate by investigating (nominally-centrosymmetric) CaF$_2$ and revealing a parasitic piezoelectricity of 83 am/V. Such studies are an important topic for emerging quantum technologies, and highlight the versatility of this new hybrid platform.
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Submitted 30 January, 2023; v1 submitted 12 August, 2022;
originally announced August 2022.
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Moiré exciton condensate: nonlinear Dirac point, broken-symmetry Bloch waves and unusual optical selection rules
Authors:
Sha Deng,
Yichen Chu,
Qizhong Zhu
Abstract:
Moiré exciton features tunable Dirac dispersion and spatially dependent optical selection rules. With the long lifetime due to its interlayer nature, it is promising to realize a Bose-Einstein condensation of moiré excitons. Here we study the properties of moiré exciton condensate within the mean-field theory, with special focus on exciton-exciton interaction effect on the nonlinear Bloch band and…
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Moiré exciton features tunable Dirac dispersion and spatially dependent optical selection rules. With the long lifetime due to its interlayer nature, it is promising to realize a Bose-Einstein condensation of moiré excitons. Here we study the properties of moiré exciton condensate within the mean-field theory, with special focus on exciton-exciton interaction effect on the nonlinear Bloch band and Bloch waves of exciton condensate in moiré potential. We find the nonlinear dispersion of the moiré exciton condensate exhibits complex loop structure induced by exciton-exciton interaction. A nonlinear Dirac cone emerges at $\boldsymbolΓ$ point of the Bloch band, with a three-fold degenerate nonlinear Dirac point. Each degenerate Bloch wave at nonlinear Dirac point spontaneously breaks $C3$ rotational symmetry of the moiré potential, and themselves differ by $C3$ rotations. Since they reside in the light cone, these nontrivial Bloch band structure and broken-symmetry Bloch waves can be experimentally detected by examining light emission from those states. Symmetry breaking of Bloch states implies unusual optical selection rules compared with single exciton case: moiré exciton condensate at $\boldsymbolΓ$ point emits light with all three components of polarization instead of only left or right circular polarization. We further propose that, by applying in-plane electric field on one layer to drive an initially optically dark exciton condensate towards light cone, the light polarization of final states as well as their dependence on field direction serves as the smoking gun for experimental observation.
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Submitted 5 July, 2022;
originally announced July 2022.
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Experimental demonstration of topological bounds in quantum metrology
Authors:
Min Yu,
Xiangbei Li,
Yaoming Chu,
Bruno Mera,
F. Nur Ünal,
Pengcheng Yang,
Yu Liu,
Nathan Goldman,
Jianming Cai
Abstract:
Quantum metrology is deeply connected to quantum geometry, through the fundamental notion of quantum Fisher information. Inspired by advances in topological matter, it was recently suggested that the Berry curvature and Chern numbers of band structures can dictate strict lower bounds on metrological properties, hence establishing a strong connection between topology and quantum metrology. In this…
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Quantum metrology is deeply connected to quantum geometry, through the fundamental notion of quantum Fisher information. Inspired by advances in topological matter, it was recently suggested that the Berry curvature and Chern numbers of band structures can dictate strict lower bounds on metrological properties, hence establishing a strong connection between topology and quantum metrology. In this work, we provide a first experimental verification of such topological bounds, by performing optimal quantum multi-parameter estimation and achieving the best possible measurement precision. By emulating the band structure of a Chern insulator, we experimentally determine the metrological potential across a topological phase transition, and demonstrate strong enhancement in the topologically non-trivial regime. Our work opens the door to metrological applications empowered by topology, with potential implications for quantum many-body systems.
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Submitted 19 November, 2022; v1 submitted 1 June, 2022;
originally announced June 2022.
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Quantum oscillations in field-induced correlated insulators of a moiré superlattice
Authors:
Le Liu,
Yanbang Chu,
Guang Yang,
Yalong Yuan,
Fanfan Wu,
Yiru Ji,
Jinpeng Tian,
Rong Yang,
Kenji Watanabe,
Takashi Taniguchi,
Gen Long,
Dongxia Shi,
Jianpeng Liu,
Jie Shen,
Li Lu,
Wei Yang,
Guangyu Zhang
Abstract:
We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ~10 K, and above 12 K, the insulating behaviors ar…
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We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ~10 K, and above 12 K, the insulating behaviors are dominant. The QOs of the insulator are strongly D dependent: the carrier density extracted from the 1/B periodicity decreases almost linearly with D from -0.7 to -1.1 V/nm, suggesting a reduced Fermi surface; the effective mass from Lifshitz-Kosevich analysis depends nonlinearly on D, reaching a minimal value of 0.1 me at D = ~ -1.0 V/nm. Similar observations of QOs are also found at v = 2, as well as in other devices without graphite gate. We interpret the D sensitive QOs of the correlated insulators in the picture of band inversion. By reconstructing an inverted band model with the measured effective mass and Fermi surface, the density of state at the gap, calculated from thermal broadened Landau levels, agrees qualitatively with the observed QOs in the insulators. While more theoretical understandings are needed in the future to fully account for the anomalous QOs in this moiré system, our study suggests that TDBG is an excellent platform to discover exotic phases where correlation and topology are at play.
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Submitted 14 May, 2023; v1 submitted 20 May, 2022;
originally announced May 2022.
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Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers
Authors:
Qinqin Wang,
Jian Tang,
Xiaomei Li,
Jinpeng Tian,
Jing Liang,
Na Li,
Depeng Ji,
Lede Xian,
Yutuo Guo,
Lu Li,
Qinghua Zhang,
Yanbang Chu,
Zheng Wei,
Yanchong Zhao,
Luojun Du,
Hua Yu Xuedong Bai,
Lin Gu,
Kaihui Liu,
Wei Yang,
Rong Yang,
Dongxia Shi,
Guangyu Zhang
Abstract:
Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and cur…
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Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT μFE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mAμm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.
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Submitted 17 March, 2022;
originally announced March 2022.
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Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene
Authors:
Le Liu,
Shihao Zhang,
Yanbang Chu,
Cheng Shen,
Yuan Huang,
Yalong Yuan,
Jinpeng Tian,
Jian Tang,
Yiru Ji,
Rong Yang,
Kenji Watanabe,
Takashi Taniguchi,
Dongxia Shi,
Jianpeng Liu,
Wei Yang,
Guangyu Zhang
Abstract:
New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition betw…
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New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. The valley Chern insulator with C = 2 is evident from a well quantized Hall conductance plateau at 2e^2/h and correspondingly a vanishing longitudinal component. The valley polarized Fermi surface is topologically trivial with C = 0, and it shows a series of quantized Landau levels with v_LL = 0, 1, 2, 3, 4 and others. These observations are in good agreements with our band and topology calculations. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.
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Submitted 15 December, 2021;
originally announced December 2021.
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Electric-field control of the nucleation and motion of isolated three-fold polar vertices
Authors:
Mingqiang Li,
Tiannan Yang,
Pan Chen,
Yongjun Wang,
Ruixue Zhu,
Xiaomei Li,
Ruochen Shi,
Heng-Jui Liu,
Yen-Lin Huang,
Xiumei Ma,
Jingmin Zhang,
Xuedong Bai,
Long-Qing Chen,
Ying-Hao Chu,
Peng Gao
Abstract:
Recently various topological polar structures have been discovered in oxide thin films. Despite the increasing evidence of their switchability under electrical and/or mechanical fields, the dynamic property of isolated ones, which is usually required for applications such as data storage, is still absent. Here, we show the controlled nucleation and motion of isolated three-fold vertices under an a…
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Recently various topological polar structures have been discovered in oxide thin films. Despite the increasing evidence of their switchability under electrical and/or mechanical fields, the dynamic property of isolated ones, which is usually required for applications such as data storage, is still absent. Here, we show the controlled nucleation and motion of isolated three-fold vertices under an applied electric field. At the PbTiO3/SrRuO3 interface, a two-unit-cell thick SrTiO3 layer provides electrical boundary conditions for the formation of three-fold vertices. Utilizing the SrTiO3 layer and in situ electrical testing system, we find that isolated three-fold vertices can move in a controllable and reversible manner with a velocity up to ~629 nm s-1. Microstructural evolution of the nucleation and propagation of isolated three-fold vertices is further revealed by phase-field simulations. This work demonstrates the ability to electrically manipulate isolated three-fold vertices, shedding light on the dynamic property of isolated topological polar structures.
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Submitted 26 October, 2022; v1 submitted 28 September, 2021;
originally announced September 2021.
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Quantum fluctuations of charge order induce phonon softening in a superconducting cuprate
Authors:
H. Y. Huang,
A. Singh,
C. Y. Mou,
S. Johnston,
A. F. Kemper,
J. van den Brink,
P. J. Chen,
T. K. Lee,
J. Okamoto,
Y. Y. Chu,
J. H. Li,
S. Komiya,
A. C. Komarek,
A. Fujimori,
C. T. Chen,
D. J. Huang
Abstract:
Quantum phase transitions play an important role in shaping the phase diagram of high-temperature cuprate superconductors. These cuprates possess intertwined orders which interact strongly with superconductivity. However, the evidence for the quantum critical point associated with the charge order in the superconducting phase remains elusive. Here we show the short-range charge orders and the spec…
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Quantum phase transitions play an important role in shaping the phase diagram of high-temperature cuprate superconductors. These cuprates possess intertwined orders which interact strongly with superconductivity. However, the evidence for the quantum critical point associated with the charge order in the superconducting phase remains elusive. Here we show the short-range charge orders and the spectral signature of the quantum fluctuations in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) near the optimal doping using high-resolution resonant inelastic X-ray scattering. On performing calculations through a diagrammatic framework, we discovered that the charge correlations significantly soften several branches of phonons. These results elucidate the role of charge order in the LSCO compound, providing evidence for quantum critical scaling and discommensurations associated with charge order.
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Submitted 26 September, 2021; v1 submitted 25 August, 2021;
originally announced August 2021.
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Spatially indirect intervalley excitons in bilayer WSe2
Authors:
Zhiheng Huang,
Yanchong Zhao,
Tao Bo,
Yanbang Chu,
Jinpeng Tian,
Le Liu,
Yalong Yuan,
Fanfan Wu,
Jiaojiao Zhao,
Lede Xian,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Dongxia Shi,
Luojun Du,
Zhipei Sun,
Sheng Meng,
Wei Yang,
Guangyu Zhang
Abstract:
Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon repli…
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Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/Γ valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics.
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Submitted 20 August, 2021;
originally announced August 2021.
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Proton distribution visualization in perovskite nickelate devices utilizing nanofocused X-rays
Authors:
Ivan A. Zaluzhnyy,
Peter O. Sprau,
Richard Tran,
Qi Wang,
Hai-Tian Zhang,
Zhen Zhang,
Tae Joon Park,
Nelson Hua,
Boyan Stoychev,
Mathew J. Cherukara,
Martin V. Holt,
Evgeny Nazarertski,
Xiaojing Huang,
Hanfei Yan,
Ajith Pattammattel,
Yong S. Chu,
Shyue Ping Ong,
Shriram Ramanathan,
Oleg G. Shpyrko,
Alex Frano
Abstract:
We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small latti…
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We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO$_3$-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory (DFT) simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small lattice distortion in the doped regions. Together, our results directly show that the knob which proton doping modifies is the electronic valency, and not the crystal lattice. The studies are relevant to on-going efforts to disentangle structural and electronic effects across metal-insulator phase transitions in correlated oxides.
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Submitted 13 August, 2021;
originally announced August 2021.
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Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2
Authors:
Yanchong Zhao,
Luojun Du,
Shiqi Yang,
Jinpeng Tian,
Xiaomei Li,
Cheng Shen,
Jian Tang,
Yanbang Chu,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Dongxia Shi,
Zhipei Sun,
Yu Ye,
Wei Yang,
Guangyu Zhang
Abstract:
Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized ph…
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Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bilayer MoS2 show a near-unity, but negative circular polarization. Significantly, by breaking time-reversal symmetry with an out-of-plane magnetic field, a record level of spontaneous valley polarization (7.7%/Tesla) is identified for interlayer excitons in bilayer MoS2. The giant valley polarization of the interlayer excitons in bilayer MoS2, together with the feasibility of electrical/optical/magnetic control and strong oscillator strength, provides a firm basis for the development of next-generation electronic and optoelectronic applications.
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Submitted 1 June, 2021;
originally announced June 2021.
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Temperature-linear Resistivity in Twisted Double Bilayer Graphene
Authors:
Yanbang Chu,
Le Liu,
Cheng Shen,
Jinpeng Tian,
Jian Tang,
Yanchong Zhao,
Jieying Liu,
Yalong Yuan,
Yiru Ji,
Rong Yang,
Kenji Watanabe,
Takashi Taniguchi,
Dongxia Shi,
Fengcheng Wu,
Wei Yang,
Guangyu Zhang
Abstract:
We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreas…
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We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreases with increasing of n, in agreement with acoustic phonon scattering model semi-quantitatively. The slope of T-linear resistivity is non-monotonically dependent on the displacement field with a single peak structure. For device with θ~1.23° at which correlated states emerge, the slope of T-linear resistivity is found maximum (~100Ω/K) at the boundary of the halo structure where phase transition occurs, with signatures of continuous phase transition, Planckian dissipation, and the diverging effective mass; these observations are in line with quantum critical behaviors, which might be due to the symmetry-breaking instability at the critical points. Our results shed new light on correlated physics in TDBG and other twisted moiré systems.
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Submitted 27 June, 2022; v1 submitted 12 April, 2021;
originally announced April 2021.
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Emergence of Chern insulating states in non-Magic angle twisted bilayer graphene
Authors:
Cheng Shen,
Jianghua Ying,
Le Liu,
Jianpeng Liu,
Na Li,
Shuopei Wang,
Jian Tang,
Yanchong Zhao,
Yanbang Chu,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Dongxia Shi,
Fanming Qu,
Li Lu,
Wei Yang,
Guangyu Zhang
Abstract:
Twisting two layers into a magic angle (MA) of ~1.1° is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less ex…
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Twisting two layers into a magic angle (MA) of ~1.1° is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle θ changes from 1.25° at one end to 1.43° at the other. For θ=1.25°, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moiré unite cell. When θ>1.25°, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moiré unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.
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Submitted 11 March, 2021; v1 submitted 8 October, 2020;
originally announced October 2020.
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Superconductivity in twisted multilayer graphene: a smoking gun in recent condensed matter physics
Authors:
Yonghuan Chu,
Fangduo Zhu,
Linzhi Wen,
Wanying Chen,
Qiaoni Chen,
Tianxing Ma
Abstract:
In this article, we review the recent discoveries of exotic phenomena in graphene, especially superconductivity. It has been theoretically suggested for more than one decade that superconductivity may emerge in doped graphene-based materials. For single-layer graphene, there are theoretical predictions that spin-singlet $d+id$ pairing superconductivity is present when the filling is around the Dir…
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In this article, we review the recent discoveries of exotic phenomena in graphene, especially superconductivity. It has been theoretically suggested for more than one decade that superconductivity may emerge in doped graphene-based materials. For single-layer graphene, there are theoretical predictions that spin-singlet $d+id$ pairing superconductivity is present when the filling is around the Dirac point. If the Fermi level is doped to the Van Hove singularity where the density of states diverges, then unconventional superconductivity with other pairing symmetry would appear. However, the experimental perspective was a bit disappointing. Despite extensive experimental efforts, superconductivity was not found in monolayer graphene. Recently, unconventional superconductivity was found in "magic-angle" twisted bilayer graphene. Superconductivity was also found in ABC stacked trilayer graphene and other systems. In this article, we review the unique properties of superconducting states in graphene, experimentally controlling the superconductivity in twisted bilayer graphene, as well as a gate-tunable Mott insulator, and the superconductivity in trilayer graphene. These discoveries have attracted the attention of a large number of physicists. The study of the electronic correlated states in twisted multilayer graphene serves as a smoking gun in recent condensed matter physics.
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Submitted 26 October, 2020; v1 submitted 30 July, 2020;
originally announced July 2020.
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Spatially correlated incommensurate lattice modulations in an atomically thin high-temperature Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} superconductors
Authors:
Nicola Poccia,
Shu Yang Frank Zhao,
Hyobin Yoo,
Xiaojing Huang,
Hanfei Yan,
Yong S. Chu,
Ruidan Zhong,
Genda Gu,
Claudio Mazzoli,
Kenji Watanabe,
Takashi Taniguchi,
Gaetano Campi,
Valerii M. Vinokur,
Philip Kim
Abstract:
Strong variations in superconducting critical temperatures in different families of the cuprate perovskites, even with similar hole doping in their copper-oxygen planes, suggest the importance of lattice modulation effects. The one-dimensional incommensurate lattice modulation (ILM) of Bi_2Sr_2CaCu_2O_{8+y}, with the average atomic positions perturbed beyond the unit cell, offers an ideal test gro…
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Strong variations in superconducting critical temperatures in different families of the cuprate perovskites, even with similar hole doping in their copper-oxygen planes, suggest the importance of lattice modulation effects. The one-dimensional incommensurate lattice modulation (ILM) of Bi_2Sr_2CaCu_2O_{8+y}, with the average atomic positions perturbed beyond the unit cell, offers an ideal test ground for studying the interplay between superconductivity and the long-range incommensurate lattice fluctuations. Here we report Scanning nano X-ray Diffraction (SnXRD) imaging of incommensurate lattice modulations in Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} Van der Waals heterostructures of thicknesses down to two-unit cells. Using SnXRD, we probe that the long-range and short-range incommensurate lattice modulations in bulk sample surface with spatial resolution below 100 nm. We find that puddle-like domains of ILM of size uniformly evolving with dimensionality. In the 2-unit cell thin sample, it is observed that the wavevectors of the long- and short-range orders become anti-correlated with emerging spatial patterns having a directional gradient. The emerging patterns, originated by tiny tuning of lattice strain, induce static mesoscopic charge density waves. Our findings thus demonstrate that the strain can be used to tune and control the electromagnetic properties of two-dimensional high-temperature superconductors.
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Submitted 7 August, 2020; v1 submitted 27 July, 2020;
originally announced July 2020.
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Development of the Soft X-ray AGM-AGS RIXS Beamline at Taiwan Photon Source
Authors:
A. Singh,
H. Y. Huang,
Y. Y. Chu,
C. Y. Hua,
S. W. Lin,
H. S. Fung,
H. W. Shiu,
J. Chang,
J. H. Li,
J. Okamoto,
C. C. Chiu,
C. H. Chang,
W. B. Wu,
S. Y. Perng,
S. C. Chung,
K. Y. Kao,
S. C. Yeh,
H. Y. Chao,
J. H. Chen,
D. J. Huang,
C. T. Chen
Abstract:
We report on the development of a high-resolution and highly efficient beamline for soft-X-ray resonant inelastic X-ray scattering (RIXS) located at Taiwan Photon Source. This beamline adopts an optical design that uses an active grating monochromator (AGM) and an active grating spectrometer (AGS) to implement the energy compensation principle of grating dispersion. Active gratings are utilized to…
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We report on the development of a high-resolution and highly efficient beamline for soft-X-ray resonant inelastic X-ray scattering (RIXS) located at Taiwan Photon Source. This beamline adopts an optical design that uses an active grating monochromator (AGM) and an active grating spectrometer (AGS) to implement the energy compensation principle of grating dispersion. Active gratings are utilized to diminish defocus, coma and higher-order aberrations as well as to decrease the slope errors caused by thermal deformation and optical polishing. The AGS is mounted on a rotatable granite platform to enable momentum-resolved RIXS measurements with scattering angle over a wide range. Several high-precision instruments developed in house for this beamline are briefly described. The best energy resolution obtained from this AGM-AGS beamline was 12.4 meV at 530 eV, achieving a resolving power 42,000, while the bandwidth of the incident soft X-rays was kept at 0.5 eV. To demonstrate the scientific impacts of high-resolution RIXS, we present an example of momentum-resolved RIXS measurements on a high-temperature superconducting cuprate, La$_{2-x}$Sr$_x$CuO$_4$. The measurements reveal the A$_{1g}$ apical oxygen phonons in superconducting cuprates, opening a new opportunity to investigate the coupling between these phonons and charge density waves.
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Submitted 24 June, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Topological Hall effect in single thick SrRuO3 layers induced by defect engineering
Authors:
Changan Wang,
Ching-Hao Chang,
Andreas Herklotz,
Chao Chen,
Fabian Ganss,
Ulrich Kentsch,
Deyang Chen,
Xingsen Gao,
Yu-Jia Zeng,
Olav Hellwig,
Manfred Helm,
Sibylle Gemming,
Ying-Hao Chu,
Shengqiang Zhou
Abstract:
The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by in…
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The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.
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Submitted 23 April, 2020;
originally announced April 2020.
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Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport
Authors:
Kuang-Chung Wang,
Roberto Grassi,
Yuanchen Chu,
Shree Hari Sureshbabu,
Junzhe Geng,
Prasad Sarangapani,
Xinchen Guo,
Mark Townsend,
Tillmann Kubis
Abstract:
State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in opt…
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State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in optoelectronic nanodevices represent an immense numerical challenge when solved within NEGF. In this work, the numerically efficient Büttiker-probe model is expanded to include electron-hole recombination and generation in the NEGF framework. Benchmarks of the new multiple-particle Büttiker probe method against state-of-the-art quantum-corrected DD models show quantitative agreements except in cases of pronounced tunneling and interference effects.
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Submitted 9 January, 2020;
originally announced January 2020.
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Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall
Authors:
Yen-Lin Huang,
Lu Zheng,
Peng Chen,
Xiaoxing Cheng,
Shang-Lin Hsu,
Tiannan Yang,
Xiaoyu Wu,
Louis Ponet,
Ramamoorthy Ramesh,
Long-Qing Chen,
Sergey Artyukhin,
Ying-Hao Chu,
Keji Lai
Abstract:
Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103…
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Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103 S/m is observed in certain BiFeO3 DWs, which is about 100,000 times greater than the carrier-induced dc conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the ac conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for RF applications.
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Submitted 6 January, 2020;
originally announced January 2020.
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Complete Strain Mapping of Nanosheets of Tantalum Disulfide
Authors:
Yue Cao,
Tadesse Assefa,
Soham Banerjee,
Andrew Wieteska,
Dennis Wang,
Abhay Pasupathy,
Xiao Tong,
Yu Liu,
Wenjian Lu,
Yu-Ping Sun,
Yan He,
Xiaojing Huang,
Hanfei Yan,
Yong S. Chu,
Simon J. L. Billinge,
Ian K. Robinson
Abstract:
Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization…
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Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 $μ$m on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a $\sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.
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Submitted 27 August, 2020; v1 submitted 5 January, 2020;
originally announced January 2020.
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Chrysanthemum-like high-entropy diboride nanoflowers: A new class of high-entropy nanomaterials
Authors:
Da Liu,
Honghua Liu,
Shanshan Ning,
Yanhui Chu
Abstract:
High-entropy nanomaterials have been arousing considerable interest in recent years due to their huge composition space, unique microstructure, and adjustable properties. Previous studies focused mainly on high-entropy nanoparticles, while other high-entropy nanomaterials were rarely reported. Herein, we reported a new class of high-entropy nanomaterials, namely (Ta0.2Nb0.2Ti0.2W02Mo0.2)B2 high-en…
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High-entropy nanomaterials have been arousing considerable interest in recent years due to their huge composition space, unique microstructure, and adjustable properties. Previous studies focused mainly on high-entropy nanoparticles, while other high-entropy nanomaterials were rarely reported. Herein, we reported a new class of high-entropy nanomaterials, namely (Ta0.2Nb0.2Ti0.2W02Mo0.2)B2 high-entropy diboride (HEB-1) nanoflowers, for the first time. The formation possibility of HEB-1 was first theoretically analyzed from two aspects of lattice size difference and chemical reaction thermodynamics. We then successfully synthesized HEB-1 nanoflowers by a facile molten salt synthesis method at 1473 K. The as-synthesized HEB-1 nanoflowers showed an interesting chrysanthemum-like morphology assembled from numerous well-aligned nanorods with the diameters of 20-30 nm and lengths of 100-200 nm. Meanwhile, these nanorods possessed a single-crystalline hexagonal structure of metal diborides and highly compositional uniformity from nanoscale to microscale. In addition, the formation of the as-synthesized HEB-1 nanoflowers could be well interpreted by a classical surface-controlled crystal growth theory. This work not only enriches the categories of high-entropy nanomaterials but also opens up a new research field on the high-entropy diboride nanomaterials.
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Submitted 14 November, 2019;
originally announced November 2019.
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Atomic-environment-dependent thickness of ferroelastic domain walls
Authors:
Mingqiang Li,
Xiaomei Li,
Yuehui Li,
Heng-Jui Liu,
Ying-Hao Chu,
Peng Gao
Abstract:
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thick…
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Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in experimental characterization. Here, we determine the atomic structure of ferroelastic domain walls and precisely measure the polarization and domain wall thickness at picometer scale using annular bright field imaging in an aberration-corrected scanning transmission electron microscope. We find that the domain wall thickness in PbZr0.2Ti0.8O3 and PbTiO3 thin films is typically about one-unit cell, across which the oxygen octahedron distortion behavior is in excellent agreement with first principles calculations. Remarkably, wider domain walls about two-unit cells in thickness are also observed for those domains walls are coupled with dislocations and underwent a compressive strain. These results suggest that the thickness of ferroelastic domain walls highly depends on their atomic environments. This study can help us to understand the past debatable experimental results and provide further insights into control of domain walls via strain engineering for their possible applications in nanoelectronics.
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Submitted 6 October, 2019;
originally announced October 2019.
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Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co$_2$MnGa
Authors:
Anastasios Markou,
Dominik Kriegner,
Jacob Gayles,
Liguo Zhang,
Yi-Cheng Chen,
Benedikt Ernst,
Yu-Hong Lai,
Walter Schnelle,
Ying-Hao Chu,
Yan Sun,
Claudia Felser
Abstract:
Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the rol…
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Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13 %, which is comparatively larger than topologically trivial metals. There is a good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggest that the effect is intrinsic. Thus, the Co$_2$MnGa compound manifests as a promising material towards topologically-driven spintronic applications.
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Submitted 7 August, 2019; v1 submitted 25 April, 2019;
originally announced April 2019.
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Non-equilibrium Green's function predictions of band tails and band gap narrowing in III-V semiconductors and nanodevices
Authors:
Prasad Sarangapani,
Yuanchen Chu,
James Charles,
Tillmann Kubis
Abstract:
High-doping induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes. In this work, Urbach tails and band gap narrowing values are calculated explicitly for GaAs, InAs, GaSb and GaN as well as ultra-thin bodies and nanowir…
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High-doping induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes. In this work, Urbach tails and band gap narrowing values are calculated explicitly for GaAs, InAs, GaSb and GaN as well as ultra-thin bodies and nanowires of the same. Electrons are solved in the non-equilibrium Green's function method in multi-band atomistic tight binding. Scattering on polar optical phonons and charged impurities is solved in the self-consistent Born approximation. The corresponding nonlocal scattering self-energies as well as their numerically efficient formulations are introduced for ultra-thin bodies and nanowires. Predicted Urbach band tails and conduction band gap narrowing agree well with experimental literature for a range of temperatures and doping concentrations. Polynomial fits of the Urbach tail and band gap narrowing as a function of doping are tabulated for quick reference.
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Submitted 16 April, 2019;
originally announced April 2019.
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Correlated states in twisted double bilayer graphene
Authors:
Cheng Shen,
Yanbang Chu,
QuanSheng Wu,
Na Li,
Shuopei Wang,
Yanchong Zhao,
Jian Tang,
Jieying Liu,
Jinpeng Tian,
Kenji Watanabe,
Takashi Taniguchi,
Rong Yang,
Zi Yang Meng,
Dongxia Shi,
Oleg V. Yazyev,
Guangyu Zhang
Abstract:
Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a "magic angle", flat band and strong many-body effects lead to correlated insulating states and superconductivity. In contrast to monolayer graphene, the band s…
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Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a "magic angle", flat band and strong many-body effects lead to correlated insulating states and superconductivity. In contrast to monolayer graphene, the band structure of untwisted bilayer graphene can be further tuned by a displacement field, providing an extra degree of freedom to control the flat band that should appear when two bilayers are stacked on top of each other. Here, we report the discovery and characterization of such displacement-field tunable electronic phases in twisted double bilayer graphene. We observe insulating states at a half-filled conduction band in an intermediate range of displacement fields. Furthermore, the resistance gap in the correlated insulator increases with respect to the in-plane magnetic fields and we find that the g factor according to spin Zeeman effect is ~2, indicating spin polarization at half filling. These results establish the twisted double bilayer graphene as an easily tunable platform for exploring quantum many-body states.
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Submitted 2 April, 2020; v1 submitted 16 March, 2019;
originally announced March 2019.
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3D visualizations of nano-scale phase separation and ultrafast dynamic correlation between phases in (Na0.32K0.68)0.95Fe1.75Se2
Authors:
P. C. Cheng,
W. Y. Tzeng,
Y. J. Chu,
C. W. Luo,
A. A. Zhukov,
J. Whittaker,
J. -Y. Lin,
K. H. Wu,
J. Y. Juang,
M. Liu,
I. V. Morozov,
A. I. Boltalin,
A. N. Vasiliev
Abstract:
Phase separation of metallic and antiferromagnetic (AFM) insulating phases in alkaline iron selenides (AxFe2-ySe2) continues to attract intense interest because the relationship between two peculiar features probably is a key to clarifying the pairing mechanism of AxFe2-ySe2 superconductors. Here we report that the 3D visualizations of nano-scale phase separation in (Na0.32K0.68)0.95Fe1.75Se2 sing…
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Phase separation of metallic and antiferromagnetic (AFM) insulating phases in alkaline iron selenides (AxFe2-ySe2) continues to attract intense interest because the relationship between two peculiar features probably is a key to clarifying the pairing mechanism of AxFe2-ySe2 superconductors. Here we report that the 3D visualizations of nano-scale phase separation in (Na0.32K0.68)0.95Fe1.75Se2 single crystals are revealed by hybrid focused-ion-beam scanning electron microscopy and the superconducting paths are fully percolative in 3D. Moreover, the phase-related ultrafast dynamics in (Na0.32K0.68)0.95Fe1.75Se2 is studied by dual-color pump-probe spectroscopy. The anomalous changes in the electron and acoustic phonon components of transient reflectivity change (ΔR/R) identify two characteristic temperatures T*~100 K (the onset temperature of coupling between nano-metallic and AFM phases) and TH~230 K (the onset temperature of metallic-interface-phase). An energy-transfer channel between the nano-metallic and AFM phases is inferred. This proposed channel provides a new insight into the pairing mechanism of alkaline iron selenide superconductors.
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Submitted 13 March, 2019;
originally announced March 2019.
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Metal-insulator transition and dominant $d+id$ pairing symmetry in twisted bilayer graphene
Authors:
Wanying Chen,
Yonghuan Chu,
Tongyun Huang,
Tianxing Ma
Abstract:
Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the superconducting pairing correlation within a two-orbital Hubbard model on an emergent honeycomb lattice. The evaluation of the temperature dependence of the conduct…
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Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the superconducting pairing correlation within a two-orbital Hubbard model on an emergent honeycomb lattice. The evaluation of the temperature dependence of the conductivity demonstrates that there is a metal-insulator transition, and the Mott phase at strong coupling is accompanied by antiferromagnetic order. The electronic correlation drives a $d+id$ superconducting pairing to be dominant over a wide filling region. All of the dc conductivity, the spin correlation and the superconductivity are suppressed as the interlayer coupling strength increases, and the critical $U_c$ for the metal-insulator transition is also reduced. Our intensive numerical results reveal that twisted bilayer graphene should be a uniquely tunable platform for exploring strongly correlated phenomena.
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Submitted 31 March, 2020; v1 submitted 5 March, 2019;
originally announced March 2019.
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Synthesis of superfine high-entropy metal diboride powders
Authors:
Da Liu,
Tongqi Wen,
Beilin Ye,
Yanhui Chu
Abstract:
High-purity and superfine high-entropy metal diboride powders, namely (Hf0.2Zr0.2Ta0.2Nb0.2Ti0.2)B2, were successfully synthesized via a facile borothermal reduction method at 1973 K for the first time. The as-synthesized powders with an average particle size of ~ 310 nm had a single-crystalline hexagonal structure of metal diborides and simultaneously possessed high compositional uniformity from…
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High-purity and superfine high-entropy metal diboride powders, namely (Hf0.2Zr0.2Ta0.2Nb0.2Ti0.2)B2, were successfully synthesized via a facile borothermal reduction method at 1973 K for the first time. The as-synthesized powders with an average particle size of ~ 310 nm had a single-crystalline hexagonal structure of metal diborides and simultaneously possessed high compositional uniformity from nanoscale to microscale. In addition, their formation mechanisms were well interpreted by analyzing the thermodynamics of the possible chemical reactions based on the first principles calculations. This work will open up a new research field on the synthesis of high-entropy metal diboride powders.
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Submitted 28 February, 2019;
originally announced February 2019.
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First-principles study, fabrication and characterization of (Zr0.25Nb0.25Ti0.25V0.25)C high-entropy ceramic
Authors:
Beilin Ye,
Tongqi Wen,
Manh Cuong Nguyen,
Luyao Hao,
Cai-Zhuang Wang,
Yanhui Chu
Abstract:
The formation possibility of a new (Zr0.25Nb0.25Ti0.25V0.25)C high-entropy ceramic (ZHC-1) was first analyzed by the first-principles calculations and thermodynamical analysis and then it was successfully fabricated by hot pressing sintering technique. The first-principles calculation results showed that the mixing enthalpy of ZHC-1 was 5.526 kJ/mol and the mixing entropy of ZHC-1 was in the range…
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The formation possibility of a new (Zr0.25Nb0.25Ti0.25V0.25)C high-entropy ceramic (ZHC-1) was first analyzed by the first-principles calculations and thermodynamical analysis and then it was successfully fabricated by hot pressing sintering technique. The first-principles calculation results showed that the mixing enthalpy of ZHC-1 was 5.526 kJ/mol and the mixing entropy of ZHC-1 was in the range of 0.693R-1.040R. The thermodynamical analysis results showed that ZHC-1 was thermodynamically stable above 959 K owing to its negative mixing Gibbs free energy. The experimental results showed that the as-prepared ZHC-1 (95.1% relative density) possessed a single rock-salt crystal structure, some interesting nanoplate-like structures and high compositional uniformity from nanoscale to microscale. By taking advantage of these unique features, compared with the initial metal carbides (ZrC, NbC, TiC and VC), it showed a relatively low thermal conductivity of 15.3 + - 0.3 W/(m.K) at room temperature, which was due to the presence of solid solution effects, nanoplates and porosity. Meanwhile, it exhibited the relatively high nanohardness of 30.3 + - 0.7 GPa and elastic modulus of 460.4 + - 19.2 GPa and the higher fracture toughness of 4.7 + - 0.5 MPa.m1/2, which were attributed to the solid solution strengthening mechanism and nanoplate pullout and microcrack deflection toughening mechanism.
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Submitted 28 February, 2019;
originally announced February 2019.
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High-Performance Multi-Mode Ptychography Reconstruction on Distributed GPUs
Authors:
Zhihua Dong,
Yao-Lung L. Fang,
Xiaojing Huang,
Hanfei Yan,
Sungsoo Ha,
Wei Xu,
Yong S. Chu,
Stuart I. Campbell,
Meifeng Lin
Abstract:
Ptychography is an emerging imaging technique that is able to provide wavelength-limited spatial resolution from specimen with extended lateral dimensions. As a scanning microscopy method, a typical two-dimensional image requires a number of data frames. As a diffraction-based imaging technique, the real-space image has to be recovered through iterative reconstruction algorithms. Due to these two…
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Ptychography is an emerging imaging technique that is able to provide wavelength-limited spatial resolution from specimen with extended lateral dimensions. As a scanning microscopy method, a typical two-dimensional image requires a number of data frames. As a diffraction-based imaging technique, the real-space image has to be recovered through iterative reconstruction algorithms. Due to these two inherent aspects, a ptychographic reconstruction is generally a computation-intensive and time-consuming process, which limits the throughput of this method. We report an accelerated version of the multi-mode difference map algorithm for ptychography reconstruction using multiple distributed GPUs. This approach leverages available scientific computing packages in Python, including mpi4py and PyCUDA, with the core computation functions implemented in CUDA C. We find that interestingly even with MPI collective communications, the weak scaling in the number of GPU nodes can still remain nearly constant. Most importantly, for realistic diffraction measurements, we observe a speedup ranging from a factor of $10$ to $10^3$ depending on the data size, which reduces the reconstruction time remarkably from hours to typically about 1 minute and is thus critical for real-time data processing and visualization.
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Submitted 30 August, 2018;
originally announced August 2018.
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Broad-Band Negative Refraction via Simultaneous Multi-Electron Transitions
Authors:
Jing-Jing Cheng,
Ying-Qi Chu,
Tao Liu,
Jie-Xing Zhao,
Fu-Guo Deng,
Qing Ai,
Franco Nori
Abstract:
We analyze different factors which influence the negative refraction in solids and multi-atom molecules. We find that this negative refraction is significantly influenced by simultaneous multi-electron transitions with the same transition frequency and dipole redistribution over different eigenstates. We show that these simultaneous multi-electron transitions and enhanced transition dipole broaden…
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We analyze different factors which influence the negative refraction in solids and multi-atom molecules. We find that this negative refraction is significantly influenced by simultaneous multi-electron transitions with the same transition frequency and dipole redistribution over different eigenstates. We show that these simultaneous multi-electron transitions and enhanced transition dipole broaden the bandwidth of the negative refraction by at least one order of magnitude. This work provides additional connection between metamaterials and Mobius strips.
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Submitted 6 July, 2018;
originally announced July 2018.
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Tunable disorder and localization in the rare-earth nickelates
Authors:
Changan Wang,
Ching-Hao Chang,
Angus Huang,
Pei-Chun Wang,
Ping-Chun Wu,
Lin Yang,
Chi Xu,
Parul Pandey,
Min Zeng,
Roman Böttger,
Horng-Tay Jeng,
Yu-Jia Zeng,
Manfred Helm,
Ying-Hao Chu,
R. Ganesh,
Shengqiang Zhou
Abstract:
The rare-earth nickelates are a rich playground for transport properties, known to host non-Fermi liquid character, resistance saturation and metal-insulator transitions. We report a study of transport in LaNiO3 in the presence of tunable disorder induced by irradiation. While pristine LaNiO3 samples are metallic, highly irradiated samples show insulating behaviour at all temperatures. Using irrad…
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The rare-earth nickelates are a rich playground for transport properties, known to host non-Fermi liquid character, resistance saturation and metal-insulator transitions. We report a study of transport in LaNiO3 in the presence of tunable disorder induced by irradiation. While pristine LaNiO3 samples are metallic, highly irradiated samples show insulating behaviour at all temperatures. Using irradiation fluence as a tuning handle, we uncover an intermediate region hosting a metal-insulator transition. This transition falls within the Mott-Ioffe-Regel regime wherein the mean free path is comparable to lattice spacing. In the high temperature metallic regime, we find a transition from non-Fermi liquid to a Fermi-liquid-like character. On the insulating side of the metal-insulator transition, we find behaviour that is consistent with weak localization. This is reflected in magnetoresistance that scales with the square of the field and in resistivity. In the highly irradiated insulating samples, we find good agreement with variable range hopping, consistent with Anderson localization. We find qualitatively similar behaviour in thick PrNiO3 films as well. Our results demonstrate that ion irradiation can be used to tailor transport, serving as an excellent tool to study the physics of localization.
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Submitted 20 June, 2018;
originally announced June 2018.
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Strong localization of oxidized Co3+ state in cobalt-hexacyanoferrate
Authors:
Hideharu Niwa,
Masamitsu Takachi,
Jun Okamoto,
Wen-Bin Wu,
Yen-Yi Chu,
Amol Singh,
Di-Jing Huang,
Yutaka Moritomo
Abstract:
Secondary batteries are important energy storage devices for a mobile equipment, an electric car, and a large-scale energy storage. Nevertheless, variation of the local electronic state of the battery materials in the charge (or oxidization) process are still unclear. Here, we investigated the local electronic state of cobalt-hexacyanoferrate (Na$_x$Co[Fe(CN)$_6$]$_{0.9}$), by means of resonant in…
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Secondary batteries are important energy storage devices for a mobile equipment, an electric car, and a large-scale energy storage. Nevertheless, variation of the local electronic state of the battery materials in the charge (or oxidization) process are still unclear. Here, we investigated the local electronic state of cobalt-hexacyanoferrate (Na$_x$Co[Fe(CN)$_6$]$_{0.9}$), by means of resonant inelastic X-ray scattering (RIXS) with high energy resolution (~100 meV). The L-edge RIXS is one of the most powerful spectroscopic technique with element- and valence-selectivity. We found that the local electronic state around Co$^{2+}$ in the partially-charged Na$_{1.1}$Co$^{2+}$$_{0.5}$Co$^{3+}$$_{0.5}$[Fe$^{2+}$(CN)$_6$]$_{0.9}$ film (x = 1.1) is the same as that of the discharged Na$_{1.6}$Co$^{2+}$[Fe$^{2+}$(CN)$_6$]$_{0.9}$ film (x = 1.6) within the energy resolution, indicating that the local electronic state around Co$^{2+}$ is invariant against the partial oxidization. In addition, the local electronic state around the oxidized Co$^{3+}$ is essentially the same as that of the fully-charged film Co$^{3+}$[Fe$^{2+}$(CN)$_6$]$_{0.3}$[Fe$^{3+}$(CN)$_6$]$_{0.6}$ (x = 0.0) film. Such a strong localization of the oxidized Co$^{3+}$ state is advantageous for the reversibility of the redox process, since the localization reduces extra reaction within the materials and resultant deterioration.
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Submitted 24 October, 2017;
originally announced October 2017.
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Dark State Polarizing a Nuclear Spin in the Vicinity of a Nitrogen-Vacancy Center
Authors:
Yang-Yang Wang,
Jing Qiu,
Ying-Qi Chu,
Mei Zhang,
Jianming Cai,
Qing Ai,
Fu-Guo Deng
Abstract:
The nuclear spin in the vicinity of a nitrogen-vacancy (NV) center possesses of long coherence time and convenient manipulation assisted by the strong hyperfine interaction with the NV center. It is suggested for the subsequent quantum information storage and processing after appropriate initialization. However, current experimental schemes are either sensitive to the inclination and magnitude of…
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The nuclear spin in the vicinity of a nitrogen-vacancy (NV) center possesses of long coherence time and convenient manipulation assisted by the strong hyperfine interaction with the NV center. It is suggested for the subsequent quantum information storage and processing after appropriate initialization. However, current experimental schemes are either sensitive to the inclination and magnitude of the magnetic field or require thousands of repetitions to achieve successful realization. Here, we propose polarizing a 13C nuclear spin in the vicinity of an NV center via a dark state. We demonstrate theoretically that it is robust to polarize various nuclear spins with different hyperfine couplings and noise strengths.
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Submitted 28 August, 2017; v1 submitted 17 August, 2017;
originally announced August 2017.
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Coulomb correlations intertwined with spin and orbital excitations in LaCoO$_3$
Authors:
K. Tomiyasu,
J. Okamoto,
H. Y. Huang,
Z. Y. Chen,
E. P. Sinaga,
W. B. Wu,
Y. Y. Chu,
A. Singh,
R. -P. Wang,
F. M. F. de Groot,
A. Chainani,
S. Ishihara,
C. T. Chen,
D. J. Huang
Abstract:
We carried out temperature-dependent (20 - 550 K) measurements of resonant inelastic X-ray scattering on LaCoO$_3$ to investigate the evolution of its electronic structure across the spin-state crossover. In combination with charge-transfer multiplet calculations, we accurately quantized the renormalized crystal-field excitation energies and spin-state populations. We show that the screening of th…
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We carried out temperature-dependent (20 - 550 K) measurements of resonant inelastic X-ray scattering on LaCoO$_3$ to investigate the evolution of its electronic structure across the spin-state crossover. In combination with charge-transfer multiplet calculations, we accurately quantized the renormalized crystal-field excitation energies and spin-state populations. We show that the screening of the on-site Coulomb interaction of 3d electrons is orbital selective and coupled to the spin-state crossover in LaCoO$_3$. The results establish that the gradual spin-state crossover is associated with a relative change of Coulomb energy versus bandwidth, leading to a Mott-type insulator-to-metal transition.
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Submitted 15 August, 2017;
originally announced August 2017.
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Formation of the $n=0$ Landau level in hybrid graphene
Authors:
P. Cadden-Zimansky,
M. Shinn,
G. T. Myers,
Y. Chu,
M. J. Dalrymple,
H. C. Travaglini
Abstract:
The minimum of 4-terminal conductance occurring at its charge neutral point has proven to be a robust empirical feature of graphene, persisting with changes to temperature, applied magnetic field, substrate, and layer thickness, though the theoretical mechanisms involved in transport about this point -- vanishing density of states, conventional band gap opening, and broken symmetry quantum Hall mo…
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The minimum of 4-terminal conductance occurring at its charge neutral point has proven to be a robust empirical feature of graphene, persisting with changes to temperature, applied magnetic field, substrate, and layer thickness, though the theoretical mechanisms involved in transport about this point -- vanishing density of states, conventional band gap opening, and broken symmetry quantum Hall mobility gaps -- vary widely depending on the regime. In this paper, we report on observations of a regime where the 4-terminal conductance minimum ceases to exist: transport in monolayer graphene connected to bilayer graphene during the onset of the quantum Hall effect. As monolayer and bilayer graphene have distinct zero-energy Landau levels that form about the charge neutral point, our observations suggest that competitions between the differing many-body orderings of these states as they emerge may underlie this anomalous conductance.
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Submitted 13 July, 2017;
originally announced July 2017.