Showing 1–50 of 56 results for author: Richter, C

Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures

Authors: Son T. Le, Thuc T. Mai, Maria F. Munoz, Angela R. Hight Walker, Curt A. Richter, Aubrey T. Hanbicki, Adam L. Friedman

Abstract: Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, mag… ▽ More Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, magnetotransport measurements including quantum Hall measurements are performed to characterize the device performance. In the unipolar (p+-p-p+ and n-n+-n) configurations, we observe quantization of the longitudinal resistance, proving well-defined doped regions and interfaces that are further analyzed by Landauer-Buttiker modeling. Our unique measurements and modeling of these optically doped devices reveal a complete separation of the p- and n-Landau level edge states. The non-interaction of the edge states results in an observed "insulating" state in devices with a bi-polar p-n-p configuration that is uncommon and has not been measured previously in graphene devices. This insulating state could be utilized in high-performance graphene electrical switches. These quantitative magnetotransport measurements confirm that these doping techniques can be applied to any 2D materials encapsulated within hBN layers, enabling versatile, rewritable circuit elements for future computing and memory applications. △ Less

Submitted 3 June, 2024; v1 submitted 4 March, 2024; originally announced March 2024.

Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$

Authors: Fatima Alarab, Karol Hricovini, Berengar Leikert, Christine Richter, Thorsten Schmitt, Michael Sing, Ralph Claessen, Ján Minár, Vladimir N. Strocov

Abstract: Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (… ▽ More Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (MES). Thereby, the in-plane dxy-derived bands reduce the embedded electron density, as evidenced by progressive reduction of their Fermi momentum with the Ni concentration, and the out-of-plane dxz/yz-derived bands depopulate, making the MES purely two-dimensional. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum, and decipher the full spectrum of the VO-induced in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may help development of this material towards its device applications associated with the reduced optical band gap. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Ultrafast Hidden Spin Polarization Dynamics of Bright and Dark Excitons in 2H-WSe$_2$

Authors: Mauro Fanciulli, David Bresteau, Jérome Gaudin, Shuo Dong, Romain Géneaux, Thierry Ruchon, Olivier Tcherbakoff, Ján Minár, Olivier Heckmann, Maria Christine Richter, Karol Hricovini, Samuel Beaulieu

Abstract: We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin p… ▽ More We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin polarization of bright and momentum-forbidden dark excitons. Our results reveal efficient chiroptical control of bright excitons' hidden spin polarization. Following optical photoexcitation, intervalley scattering between nonequivalent K-K' valleys leads to a decay of bright excitons' hidden spin polarization. Conversely, the ultrafast formation of momentum-forbidden dark excitons acts as a local spin polarization reservoir, which could be used for spin injection in van der Waals heterostructures involving multilayer transition metal dichalcogenides. △ Less

Submitted 18 July, 2023; v1 submitted 6 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. Lett. 131, 066402 (2023)

Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices

Authors: C. Corley-Wiciak, M. H. Zoellner, I. Zaitsev, K. Anand, E. Zatterin, Y. Yamamoto, A. A. Corley-Wiciak, F. Reichmann, W. Langheinrich, L. R. Schreiber, C. L. Manganelli, M. Virgilio, C. Richter, G. Capellini

Abstract: The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in… ▽ More The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices. △ Less

Submitted 18 April, 2023; originally announced April 2023.

Comments: 16 pages, 6 figures

Journal ref: Phys. Rev. Applied 20, 024056, 2023

Asymmetrical contact scaling and measurements in MoS2 FETs

Authors: Zhihui Cheng, Jonathan Backman, Huairuo Zhang, Hattan Abuzaid, Guoqing Li, Yifei Yu, Linyou Cao, Albert V. Davydov, Mathieu Luisier, Curt A. Richter, Aaron D. Franklin

Abstract: Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be… ▽ More Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be investigated. The channel scalability of 2D materials has been thoroughly investigated, confirming their resilience to short-channel effects. However, systematic studies on contact scalability remain rare and the current understanding of contact scaling in 2D FET is inconsistent and oversimplified. Here we combine physically scaled contacts and asymmetrical contact measurements to investigate the contact scaling behavior in 2D field-effect transistors (FETs). The asymmetrical contact measurements directly compare electron injection with different contact lengths while using the exact same channel, eliminating channel-to-channel variations. Compared to devices with long contact lengths, devices with short contact lengths (scaled contacts) exhibit larger variation, smaller drain currents at high drain-source voltages, and a higher chance of showing early saturation and negative differential resistance. Quantum transport simulations show that the transfer length of Ni-MoS2 contacts can be as short as 5 nm. Our results suggest that charge injection at the source contact is different from injection at the drain side: scaled source contacts can limit the drain current, whereas scaled drain contacts cannot. Furthermore, we clearly identified that the transfer length depends on the quality of the metal-2D interface. The asymmetrical contact measurements proposed here will enable further understanding of contact scaling behavior at various interfaces. △ Less

Submitted 24 September, 2022; v1 submitted 9 September, 2022; originally announced September 2022.

X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy

Authors: Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese, David van Treeck, Albert Kwasniewski, Carsten Richter, Sergio Fernández-Garrido, Oliver Brandt

Abstract: GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate bet… ▽ More GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al$_{2}$O$_{3}$ and GaN. These topotaxial crystallites in Ti film, formed due to interfacial reactions and N exposure, possess fairly little misorientation with respect to Al$_{2}$O$_{3}$. As a result, GaN NWs grow on the top TiN layer possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modeled by the Monte Carlo method taking into account the orientational distributions of NWs, a variety of their cross-sectional shapes and sizes, and roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of $(1\bar{1}00)$ and $(11\bar{2}0)$ side facets are determined. △ Less

Submitted 11 July, 2022; originally announced July 2022.

Journal ref: J. Appl. Cryst. 56, 439-448 (2023)

Coexistence of local structural heterogeneities and long-range ferroelectricity in Pb-free (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 ceramics

Authors: Koushik Dey, Abdul Ahad, Kamini Gautam, Abinash Tripathy, Sofi Suhail Majid, Sonia Francoual, Carsten Richter, MN Singh, Archna Sagdeo, Edmund Welter, Naratip Vittayakorn, Vasant G. Sathe, Rajeev Rawat, Dinesh Kumar Shukla

Abstract: Environmentally benign (1-x)Ba(Ti$_{0.8}$Zr$_{0.2}$)O$_3$-x(Ba$_{0.7}$Ca$_{0.3}$)TiO$_3$ (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In this Letter, by focusing on local and average structure in combination with macroscopic electromechanical and dielectric measurements we demonstrate the structur… ▽ More Environmentally benign (1-x)Ba(Ti$_{0.8}$Zr$_{0.2}$)O$_3$-x(Ba$_{0.7}$Ca$_{0.3}$)TiO$_3$ (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In this Letter, by focusing on local and average structure in combination with macroscopic electromechanical and dielectric measurements we demonstrate the structure property relationship in the tetragonal BZT-BCT ceramic. During high-temperature cubic to tetragonal phase transformation, polar nanoregions are manifested through the spontaneous volume ferroelectrostriction at temperatures below $\sim$ 477 K. Temperature-dependent local structural investigations across the Zr K edge extended x-ray absorption fine structure spectroscopy reveal an anomalous collaboration between the ZrO$_{6}$ and TiO$_6$ octahedra. These octahedra compromise their individuality during polarization development. The presence of domains of submicron size embedded inside the macroscopic ferroelectric regions below T$_{m}$, as well as their hierarchical arrangement, is observed by piezo-response force microscopy. Effects of the existence of the structural/polar heterogeneities below T$_{m}$ are observed also when polarizibilities of the poled and the unpoled samples are compared; the poled sample is found to be more susceptible to the electric field. In addition, by using electric field dependent x-ray diffraction studies we also show that this ceramic under field exhibits reduction of tetragonal distortion, which is consistent with earlier reports. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Comments: 9 pages, 6 figures

How to Report and Benchmark Emerging Field-Effect Transistors

Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Abstract: Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc… ▽ More Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully. △ Less

Submitted 4 August, 2022; v1 submitted 30 March, 2022; originally announced March 2022.

Comments: 15 pages, 3 figures

Journal ref: Nature Electronics 5 (2022) 416-423

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy

Authors: Carsten Richter, Vladimir M. Kaganer, Armelle Even, Amélie Dussaigne, Pierre Ferret, Frédéric Barbier, Yves-Matthieu Le Vaillant, Tobias U. Schülli

Abstract: Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this wo… ▽ More Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this work, we demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy. We develope a formalism to extract all components of strain and orientation from a set of scanning diffraction measurements and apply the technique to a patterned In$_x$Ga$_{1-x}$N double layer to study strain relaxation and indium incorporation phenomena. The contributions due to varying indium content and threading dislocations are separated and analyzed. △ Less

Submitted 28 March, 2022; originally announced March 2022.

Geometric interference in a high-mobility graphene annulus p-n junction device

Authors: Son T. Le, Albert F. Rigosi, Joseph A. Hagmann, Christopher Gutierrez, Ji Ung Lee, Curt A. Richter

Abstract: The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Ahar… ▽ More The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring. △ Less

Submitted 29 December, 2021; originally announced December 2021.

Towards Exotic Layered Materials: 2D Cuprous Iodide

Authors: Kimmo Mustonen, Christoph Hofer, Peter Kotrusz, Alexander Markevich, Martin Hulman, Clemens Mangler, Toma Susi, Timothy J. Pennycook, Karol Hricovini, Christine M. Richter, Jannik C. Meyer, Jani Kotakoski, Viera Skakalova

Abstract: Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the lar… ▽ More Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist in other temperatures and pressures. Here, we demonstrate how these structures can be stabilized in 2D van der Waals stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, we produce an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K. Our results establish a route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient. △ Less

Submitted 3 December, 2021; v1 submitted 17 September, 2021; originally announced September 2021.

Comments: 15 pages, 6 figures, separate supplementary material included

Piezoelectricity in hafnia

Authors: Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek, Claudia Richter, Hugo Aramberri, Haidong Lu, Uwe Schroeder, Emmanuel Defay, Alexei Gruverman, Jorge Íñiguez

Abstract: Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, wh… ▽ More Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material. △ Less

Submitted 15 July, 2021; originally announced July 2021.

Comments: 11 pages, 9 figures

Vesicle dynamics in large amplitude oscillatory extensional flow

Authors: Charlie Lin, Dinesh Kumar, Channing M. Richter, Shiyan Wang, Charles M. Schroeder, Vivek Narsimhan

Abstract: Although the behavior of fluid-filled vesicles in steady flows has been extensively studied, far less is understood regarding the shape dynamics of vesicles in time-dependent oscillatory flows. Here, we investigate the nonlinear dynamics of vesicles in large amplitude oscillatory extensional (LAOE) flows using both experiments and boundary integral (BI) simulations. Our results characterize the tr… ▽ More Although the behavior of fluid-filled vesicles in steady flows has been extensively studied, far less is understood regarding the shape dynamics of vesicles in time-dependent oscillatory flows. Here, we investigate the nonlinear dynamics of vesicles in large amplitude oscillatory extensional (LAOE) flows using both experiments and boundary integral (BI) simulations. Our results characterize the transient membrane deformations, dynamical regimes, and stress response of vesicles in LAOE in terms of reduced volume (vesicle asphericity), capillary number ($\Ca$, dimensionless flow strength), and Deborah number ($\De$, dimensionless flow frequency). Results from single vesicle experiments are found to be in good agreement with BI simulations across a wide range of parameters. Our results reveal three distinct dynamical regimes based on vesicle deformation: pulsating, reorienting, and symmetrical regimes. We construct phase diagrams characterizing the transition of vesicle shapes between pulsating, reorienting, and symmetrical regimes within the two-dimensional Pipkin space defined by $\De$ and $\Ca$. Contrary to observations on clean Newtonian droplets, vesicles do not reach a maximum length twice per strain rate cycle in the reorienting and pulsating regimes. The distinct dynamics observed in each regime result from a competition between the flow frequency, flow time scale, and membrane deformation timescale. By calculating the particle stresslet, we quantify the nonlinear relationship between average vesicle stress and strain rate. Additionally, we present results on tubular vesicles that undergo shape transformation over several strain cycles. Broadly, our work provides new information regarding the transient dynamics of vesicles in time-dependent flows that directly informs bulk suspension rheology. △ Less

Submitted 17 February, 2021; originally announced February 2021.

Comments: 28 pages, 14 figures

Journal ref: J. Fluid Mech. 929 (2021) A43

Fermiology and electron-phonon coupling in the 2H and 3R polytypes of NbS$\boldsymbol{_2}$

Authors: Zakariae El Youbi, Sung Won Jung, Christine Richter, Karol Hricovini, Cephise Cacho, Matthew D. Watson

Abstract: We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that t… ▽ More We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that the stoichiometry, rather than the stacking arrangement, is the most important factor in the difference in electronic and physical properties of the two phases. Our high resolution data on the 2H phase shows kinks in the spectral function that are fingerprints of the electron-phonon coupling. However, the strength of the coupling is found to be much larger for the the sections of bands with Nb 4$d_{x^2-y^2,xy}$ character than for the Nb 4$d_{3z^2-r^2}$. Our results provide an experimental framework for interpreting the two-gap superconductivity and "latent" charge density wave in 2H-NbS$_2$. △ Less

Submitted 30 March, 2021; v1 submitted 23 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 155105 (2021)

Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$

Authors: Zakariae El Youbi, Sung Won Jung, Saumya Mukherjee, Mauro Fanciulli, Jakub Schusser, Olivier Heckmann, Christine Richter, Ján Minár, Karol Hricovini, Matthew D. Watson, Cephise Cacho

Abstract: The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-… ▽ More The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES. △ Less

Submitted 7 June, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Double-mode relaxation of highly deformed vesicles

Authors: Dinesh Kumar, Channing M. Richter, Charles M. Schroeder

Abstract: Lipid vesicles are known to undergo complex conformational transitions, but it remains challenging to systematically characterize non-equilibrium membrane shape dynamics. Here, we report the direct observation of lipid vesicle relaxation from highly deformed shapes using a Stokes trap. Vesicle shape relaxation is described by two distinct characteristic time scales governed by the bending modulus… ▽ More Lipid vesicles are known to undergo complex conformational transitions, but it remains challenging to systematically characterize non-equilibrium membrane shape dynamics. Here, we report the direct observation of lipid vesicle relaxation from highly deformed shapes using a Stokes trap. Vesicle shape relaxation is described by two distinct characteristic time scales governed by the bending modulus and membrane tension. Interestingly, experimental results are consistent with a viscoelastic model of a deformed membrane. Overall, these results show that vesicle relaxation is governed by an interplay between membrane elastic moduli, surface tension, and vesicle deflation. △ Less

Submitted 27 February, 2020; originally announced March 2020.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. E 102, 010605 (2020)

Spin-, time- and angle-resolved photoemission spectroscopy on WTe$_2$

Authors: Mauro Fanciulli, Jakub Schusser, Min-I Lee, Zakariae El Youbi, Olivier Heckmann, Maria Christine Richter, Cephise Cacho, Carlo Spezzani, David Bresteau, Jean-François Hergott, Pascal D'Oliveira, Olivier Tcherbakoff, Thierry Ruchon, Jan Minár, Karol Hricovini

Abstract: We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoe… ▽ More We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoemission calculations provide insight into the spin polarization of electrons above the Fermi level in the region where Weyl points of WTe$_2$ are expected. We observe a spin accumulation above the Weyl points region, that is consistent with a spin-selective bottleneck effect due to the presence of spin polarized cone-like electronic structure. Our results support the feasibility of STARPES with HHG, which despite being experimentally challenging provides a unique way to study spin dynamics in photoemission. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Research 2, 013261 (2020)

Photoexcited organic molecules $en~route$ to highly efficient autoionization

Authors: Sesha Vempati, Lea Bogner, Clemens Richter, Jan-Christoph Deinert, Laura Foglia, Lukas Gierster, Julia Stähler

Abstract: The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, af… ▽ More The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, after initial ultrafast relaxation on fs and ps timescales, an optically dark state is populated, likely the SP6 triplet (T) state, that undergoes Dexter-type energy transfer ($r_{\mathrm{Dex}} = 1.3~\mathrm{nm}$) and exhibits a long decay time of 0.1 s. Because of this long lifetime a photostationary state with average T-T distances below 2 nm is established at excitation densities in the $10^{20}~\mathrm{cm}^{-2}~\mathrm{s}^{-1}$ range. This large density enables decay by T-T annihilation (TTA) mediating autoionization despite an extremely low TTA rate of $k_{\mathrm{TTA}} = 4.5~10^{-26}~\mathrm{m}^3~\mathrm{s}^{-1}$. The large external quantum efficiency of the autoionization process (up to 15 %) and photocurrent densities in the \mathrm{mA}~\mathrm{cm}^{-2}$ range offer great potential for light-harvesting applications. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Rapid, Quantitative Therapeutic Screening for Alzheimer's Enzymes Enabled by Optimal Signal Transduction with Transistors

Authors: Son T. Le, Michelle A. Morris, Antonio Cardone, Nicholas B. Guros, Jeffery B. Klauda, Brent A. Sperling, Curt A. Richter, Harish C. Pant, Arvind Balijepalli

Abstract: We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to… ▽ More We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to measure the change in solution pH arising from the activity of a pathological form of the kinase Cdk5, an enzyme implicated in Alzheimer's disease, and showed quantitative agreement with previous measurements. The improved pH resolution was realized while the devices were operated in a remote sensing configuration with the pH sensing element off-chip and connected electrically to the FET gate terminal. We compared these results with those measured by using a custom-built dual-gate 2D field-effect transistor (dg2DFET) fabricated with 2D semi-conducting MoS2 channels and a moderate device gain, alpha=8. Under identical solution conditions the pH resolution of the nFETs was only 2-fold worse than the dg2DFETs pH resolution of (3.9+/-0.7)x10^-3. Finally, using the nFETs, we demonstrated the effectiveness of a custom polypeptide, p5, as a therapeutic agent in restoring the function of Cdk5. We expect that the straight-forward modifications to commercially sourced nFETs demonstrated here will lower the barrier to widespread adoption of these remote-gate devices and enable sensitive bioanalytical measurements for high throughput screening in drug discovery and precision medicine applications. △ Less

Submitted 21 October, 2019; originally announced October 2019.

Conformational dynamics and phase behavior of lipid vesicles in a precisely controlled extensional flow

Authors: Dinesh Kumar, Channing M. Richter, Charles M. Schroeder

Abstract: Lipid vesicles play a key role in fundamental biological processes. Despite recent progress, we lack a complete understanding of the non-equilibrium dynamics of vesicles due to challenges associated with long-time observation of shape fluctuations in strong flows. In this work, we present a flow-phase diagram for vesicle shape and conformational transitions in planar extensional flow using a Stoke… ▽ More Lipid vesicles play a key role in fundamental biological processes. Despite recent progress, we lack a complete understanding of the non-equilibrium dynamics of vesicles due to challenges associated with long-time observation of shape fluctuations in strong flows. In this work, we present a flow-phase diagram for vesicle shape and conformational transitions in planar extensional flow using a Stokes trap, which enables control over the center-of-mass position of single or multiple vesicles in precisely defined flows [Shenoy, Rao, Schroeder, \textit{PNAS}, 113(15):3976-3981, 2016]. In this way, we directly observe the non-equilibrium conformations of lipid vesicles as a function of reduced volume $ν$, capillary number $Ca$, and viscosity contrast $λ$. Our results show that vesicle dynamics in extensional flow are characterized by the emergence of three distinct shape transitions, including a tubular to symmetric dumbbell transition, a spheroid to asymmetric dumbbell transition, and quasi-spherical to ellipsoid transition. The experimental phase diagram is in good agreement with recent predictions from simulations [Narsimhan, Spann, Shaqfeh, \textit{J. Fluid Mech.}, 2014, \textbf{750}, 144]. We further show that the phase boundary of vesicle shape transitions is independent of the viscosity contrast. Taken together, our results demonstrate the utility of the Stokes trap for the precise quantification of vesicle stretching dynamics in precisely defined flows. △ Less

Submitted 14 October, 2019; originally announced October 2019.

Comments: 12 pages, 6 figures

Strong equilibration of Landau levels edge-states at the graphene edge

Authors: Son T. Le, Joseph A. Hagmann, Nikolai Klimov, David Newell, Ji Ung Lee, Jun Yan, Curt A. Richter

Abstract: We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Me… ▽ More We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Measurements show that while the lowest LL edge-state is decoupled from the other LLs along the electrostatic junction, all the edge-states strongly equilibrate at the graphene physical edge despite the relatively short distance that they travel along the edge in our device. These findings are fundamental for the engineering of future high-performance graphene field-effect transistors based upon electron optics. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

Authors: Nicholas B. Guros, Son T. Le, Siyuan Zhang, Brent A. Sperling, Jeffery B. Klauda, Curt A. Richter, Arvind Balijepalli

Abstract: Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to rea… ▽ More Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area (~5000 um2) monolayer MoS2 with a yield of 85 %. A central element of this process is an exposed material forming gas anneal (EM-FGA) that results in uniform FET performance metrics (i.e., field-effect mobilities, threshold voltages, and contact performance). Complementary analytical measurements show that the EM-FGA process reduces deleterious channel doping effects by decreasing organic contamination, while also reducing the prevalence of insulating molybdenum oxide, effectively improving the MoS2-gate oxide interface. The uniform FET performance metrics and high device yield achieved by applying the EM-FGA technique on large-area 2D material flakes will help advance the fabrication of complex 2D nanoelectronics devices and demonstrates the need for improved engineering of the 2D material-gate oxide interface. △ Less

Submitted 3 April, 2019; originally announced April 2019.

Uncovering the (un-)occupied electronic structure of a buried hybrid interface

Authors: S. Vempati, J. -C. Deinert, L. Gierster, L. Bogner, C. Richter, N. Mutz, S. Blumstengel, A. Zykov, S. Kowarik, Y. Garmshausen, J. Hildebrandt, S. Hecht, J. Stähler

Abstract: The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determi… ▽ More The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(10-10). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level $E_\text{F}$. Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above $E_\text{F}$, which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces. △ Less

Submitted 2 November, 2018; originally announced November 2018.

Bi monocrystal formation on InAs(111)A and B substrates

Authors: L. Nicolaï, J. -M. Mariot, U. Djukic, W. Wang, O. Heckmann, M. C. Richter, J. Kanski, M. Leandersson, J. Sadowski, T. Balasubramanian, I. Vobornik, J. Fujii, J. Braun, H. Ebert, J. Minár, K. Hricovini

Abstract: The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi gro… ▽ More The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations. △ Less

Submitted 1 July, 2018; originally announced July 2018.

Comments: 7 pages, 7 figures

Study and characterization of SrTiO3 surface

Authors: F. Alarab, J. Minar, P. Sutta, L. Prusakova, R. Medlın, O. Heckmann, C. Richter, K. Hricovini

Abstract: The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a cl… ▽ More The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a clean SrTiO3(001) surface where it is formed due to oxygen vacancies. However, these 2DEG systems have been until now found mostly on atomically perfect crystalline samples usually grown by pulsed laser deposition or molecular beam epitaxy i.e. samples which are difficult to be prepared and require specific experimental conditions. Here, we report on the fabrication of SrTiO3 thin films deposited by magnetron sputtering which is suitable for mass-production of samples adapted for nanoelectronic applications. The characterization of their structural and electronic properties was done and compared to those of SrTiO3 single crystals. XRD patterns and SEM micrography show that the deposited films are amorphous and their structure changes to polycrystalline by heating them at 900 °C. Photoemission spectroscopy (XPS and UPS) was used to study the electronic properties of the films and the crystal. In both, we observe the 2DEG system at Fermi level and the formation of Ti3+ states after heating the surface at 900 °C. △ Less

Submitted 30 June, 2018; originally announced July 2018.

Comments: 6 pages, 3 figures

High quality cobalt ferrite ultrathin films with large inversion parameter grown in epitaxy on Ag(001)

Authors: M. De Santis, A. Bailly, I. Coates, S. Grenier, O. Heckmann, K. Hricovini, Y. Joly, V. Langlais, A. Y. Ramos, M. C. Richter, X. Torrelles. S. Garaudée, O. Geaymond, O. Ulrich

Abstract: Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. T… ▽ More Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. The epitaxial orientation, the surface, interface and film structure were resolved combining LEED, STM, Auger and in situ GIXRD. A slight tetragonal distortion was observed, that should drive the easy magnetization axis in plane due to the large magneto-elastic coupling of such a material. The so-called inversion parameter, i.e. the Co fraction occupying octahedral sites in the ferrite spinel structure, is a key element for its spin-dependent electronic gap. It was obtained through in-situ x-ray resonant diffraction measurements collected at both the Co and Fe K edges. The data analysis was performed using the FDMNES code and showed that Co ions are predominantly located at octahedral sites with an inversion parameter of 0.88 +- 0.05. Ex-situ XPS gave an estimation in accordance with the values obtained through diffraction analysis. △ Less

Submitted 29 June, 2018; originally announced July 2018.

Comments: 17 pages, 9 figures, 3 tables

A topological material in the III-V family: heteroepitaxial InBi on InAs

Authors: Laurent Nicolaï, Ján Minár, Maria Christine Richter, Uros Djukic, Olivier Heckmann, Jean-Michel Mariot, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini

Abstract: InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradic… ▽ More InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture. △ Less

Submitted 31 July, 2024; v1 submitted 8 June, 2018; originally announced June 2018.

Comments: 5 figures, 12 pages (+ Sup.)

Resonant photoemission with circular polarized light on magnetized LSMO

Authors: M. C. Richter, O. Heckmann, B. S. Mun, C. S. Fadley, B. Mercey, K. Hricovini

Abstract: We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the posit… ▽ More We have used resonant photoemission with circular polarized light as a new tool to obtain information about the electronic structure of half-metals. After careful sample surface preparation of La0.7Sr0.3MnO3, we have obtained a dichroic signal for the L2,3 absorption of Mn. Working with a magnetized sample and circular polarized light we observe a clear effect of the helicity of light on the position of the resonant Raman-Auger photoelectrons from the Mn 2p3p3d decay. These results allow us to achieve a rough estimate of the half-metallic spin half-gap. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Comments: 4 figures

Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface

Authors: Olivier Heckmann, Maria Christine Richter, Jean-Michel Mariot, Laurent Nicolaï, Ivana Vobornik, Weimin Wang, Uros Djukic, Karol Hricovini

Abstract: Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) int… ▽ More Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present ARPES studies of Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi-nanolines. We found that the building up of the interface does affect the electronic structure of the substrate. As a consequence of weak interaction, bismuth states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality. △ Less

Submitted 23 June, 2018; v1 submitted 4 June, 2018; originally announced June 2018.

Comments: 6 pages, 4 figures

Distinctive Picosecond Spin Polarization Dynamics in Bulk Half-Metals

Authors: M. Battiato, J. Minar, W. Wang, W. Ndiaye, M. C. Richter, O. Heckmann, J. -M. Mariot, F. Parmigiani, K. Hricovini, C. Cacho

Abstract: Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conducti… ▽ More Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conduction and majority valence electrons respectively. Remarkably, these distributions have the same temperature but different chemical potentials. This unusual thermodynamics state causes a persistent non-equilibrium spin polarization only well above the Fermi energy. Femtosecond spin dynamics experiments performed on Fe$_3$O$_4$ by time-, spin-, and angle-resolved photoelectron spectroscopy confirm our model. Furthermore, the spin polarization response proves to be very robust and it can be adopted to selectively test the bulk HM character in a wide range of compounds. △ Less

Submitted 28 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. Lett. 121, 077205 (2018)

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Authors: Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri, Jonathan Wyrick, Kai Li, Roy E. Murray, Alline Myers, Frederick Misenkosen, M. D. Stewart, Jr., Curt A. Richter, Richard M. Silver

Abstract: Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deter… ▽ More Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deterministic placement of single dopants. However, dopant segregation, diffusion, surface roughening, and defect formation during the encapsulation overgrowth introduce large uncertainties to the exact dopant placement and activation ratio. In this study, we develop a unique method by combining dopant segregation/diffusion models with sputter profiling simulation to monitor and control, at the atomic scale, dopant movement using room-temperature grown locking layers (LL). We explore the impact of LL growth rate, thickness, rapid thermal anneal, surface accumulation, and growth front roughness on dopant confinement, local crystalline quality, and electrical activation within Si:P 2-D systems. We demonstrate that dopant movement can be more efficiently suppressed by increasing the LL growth rate than by increasing LL thickness. We find that the dopant segregation length can be suppressed below a single Si lattice constant by increasing LL growth rates at room temperature while maintaining epitaxy. Although dopant diffusivity within the LL is found to remain high even below the hydrogen desorption temperature, we demonstrate that exceptionally sharp dopant confinement with high electrical quality within Si:P monolayers can be achieved by combining a high LL growth rate with a low-temperature LL rapid thermal anneal. △ Less

Submitted 9 November, 2017; originally announced November 2017.

In-gap features in superconducting LaAlO$_3$-SrTiO$_3$ interfaces observed by tunneling spectroscopy

Authors: Lukas Kuerten, Christoph Richter, Narayan Mohanta, Thilo Kopp, Arno Kampf, Jochen Mannhart, Hans Boschker

Abstract: We identified quasiparticle states at well-defined energies inside the superconducting gap of the electron system at the LaAlO$_3$-SrTiO$_3$ interface using tunneling spectroscopy. The states are found only in a number of samples and depend upon the thermal-cycling history of the samples. The states consist of a peak at zero energy and other peaks at finite energies, symmetrically placed around ze… ▽ More We identified quasiparticle states at well-defined energies inside the superconducting gap of the electron system at the LaAlO$_3$-SrTiO$_3$ interface using tunneling spectroscopy. The states are found only in a number of samples and depend upon the thermal-cycling history of the samples. The states consist of a peak at zero energy and other peaks at finite energies, symmetrically placed around zero energy. These peaks disappear, together with the superconducting gap, with increasing temperature and magnetic field. We discuss the likelihood of various physical mechanisms that are known to cause in-gap states in superconductors and conclude that none of these mechanisms can easily explain the results. The conceivable scenarios are the formation of Majorana bound states, Andreev bound states, or the presence of an odd-frequency spin triplet component in the superconducting order parameter. △ Less

Submitted 7 April, 2017; originally announced April 2017.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. B 96, 014513 (2017)

Artificial piezoelectricity in centrosymmetric SrTiO3

Authors: B. Khanbabaee, E. Mehner, C. Richter, J. Hanzig, M. Zschornak, U. Pietsch, H. Stöcker, T. Leisegang, D. C. Meyer, S. Gorfman

Abstract: Defect engineering is an effective and powerful tool to control existing material properties and create completely new ones, which are symmetry-forbidden in a defect-free crystal. This letter reports on the creation of piezoelectrically active near-surface layer of centrosymmetric SrTiO3, modified by the electric field-induced migration of oxygen vacancies. We provide the unequivocal proof of piez… ▽ More Defect engineering is an effective and powerful tool to control existing material properties and create completely new ones, which are symmetry-forbidden in a defect-free crystal. This letter reports on the creation of piezoelectrically active near-surface layer of centrosymmetric SrTiO3, modified by the electric field-induced migration of oxygen vacancies. We provide the unequivocal proof of piezoelectricity through the stroboscopic time-resolved X-ray diffraction under alternating electric field. The magnitude of the discovered piezoelectric effect is comparable with the bulk piezoelectric effect in commercial ferroelectric materials. Such artificially formed defect-mediated piezoelectricity can be important as an alternative road for smart materials design. △ Less

Submitted 24 May, 2016; originally announced May 2016.

Comments: 10 pages, 4 figures

Evidence for Superconducting Phase Coherence in the Metallic/Insulating Regime of the LaAlO3-SrTiO3 Interface Electron System

Authors: E. Fillis-Tsirakis, C. Richter, J. Mannhart, H. Boschker

Abstract: A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition into a metallic/insulating state that is still characterized by a gap in the spectral density of states. Measuring and analyzing the critical field of this gap,… ▽ More A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition into a metallic/insulating state that is still characterized by a gap in the spectral density of states. Measuring and analyzing the critical field of this gap, we provide evidence that macroscopically phase-coherent Cooper pairs are present in the metallic/insulating state. This is characterized by fluctuating vortex-antivortex pairs, and not by individual, immobile Cooper pairs. The measurements furthermore yield the carrier-density dependence of the superconducting coherence length of the two-dimensional system. △ Less

Submitted 18 December, 2015; originally announced December 2015.

Electron-phonon Coupling and the Superconducting Phase Diagram of the LaAlO3-SrTiO3 Interface

Authors: Hans Boschker, Christoph Richter, Evangelos Fillis-Tsirakis, Christof W. Schneider, Jochen Mannhart

Abstract: The superconductor at the LaAlO3-SrTiO3 interface provides a model system for the study of two-dimensional superconductivity in the dilute carrier density limit. Here we experimentally address the pairing mechanism in this superconductor. We extract the electron-phonon spectral function from tunneling spectra and conclude, without ruling out contributions of further pairing channels, that electron… ▽ More The superconductor at the LaAlO3-SrTiO3 interface provides a model system for the study of two-dimensional superconductivity in the dilute carrier density limit. Here we experimentally address the pairing mechanism in this superconductor. We extract the electron-phonon spectral function from tunneling spectra and conclude, without ruling out contributions of further pairing channels, that electron-phonon mediated pairing is strong enough to account for the superconducting critical temperatures. Furthermore, we discuss the electron-phonon coupling in relation to the superconducting phase diagram. The electron-phonon spectral function is independent of the carrier density, except for a small part of the phase diagram in the underdoped region. The tunneling measurements reveal that the increase of the chemical potential with increasing carrier density levels off and is zero in the overdoped region of the phase diagram. This indicates that the additionally induced carriers do not populate the band that hosts the superconducting state and that the superconducting order parameter therefore is weakened by the presence of charge carriers in another band. △ Less

Submitted 3 May, 2015; v1 submitted 16 April, 2015; originally announced April 2015.

Journal ref: Scientific Reports 5, 12309 (2015)

Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions

Authors: Wei Li, Qin Zhang, R. Bijesh, Oleg A. Kirillov, Yiran Liang, Igor Levin, Lian-Mao Peng, Curt A. Richter, Xuelei Liang, S. Datta, David J. Gundlach, N. V. Nguyen

Abstract: The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect t… ▽ More The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the heterojunction interface. We report here on experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode in a traditional internal photoemission measurement, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al2O3/InAs/GaSb layer structure, the barrier height from the top of InAs and GaSb valence band to the bottom of Al2O3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of Al2O3 valence band to the bottom of InAs and GaSb conduction band. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted model of electron quantum tunneling efficiency and transistor performance. △ Less

Submitted 4 October, 2014; originally announced October 2014.

Comments: 6 figures

Ultrafast exciton formation at the ZnO(10${\overline{\textbf{1}}}$0) surface

Authors: J. -C. Deinert, D. Wegkamp, M. Meyer, C. Richter, M. Wolf, J. Stähler

Abstract: We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces… ▽ More We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces the SX formation probability at high excitation densities near the Mott limit. Located just below the surface, the SX are stable with regard to hydrogen-induced work function modifications and thus the ideal prerequisite for resonant energy transfer applications. △ Less

Submitted 30 September, 2014; originally announced September 2014.

Journal ref: Phys. Rev. Lett. 113, 057602 (2014)

Momentum resolved spin dynamics of bulk and surface excited states in the topological insulator $\mathrm{Bi_{2}Se_{3}}$

Authors: C. Cacho, A. Crepaldi, M. Battiato, J. Braun, F. Cilento, M. Zacchigna, M. C. Richter, O. Heckmann, E. Springate, Y. Liu, S. S. Dhesi, H. Berger, Ph. Bugnon, K. Held, M. Grioni, H. Ebert, K. Hricovini, J. Minár, F. Parmigiani

Abstract: The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it p… ▽ More The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only by measuring the spin intensity signal over several order of magnitude in spin, time and angle resolved photoemission spectroscopy (STAR-PES) experiments is it possible to comprehensively describe the optically excited electronic states in TIs materials. The experiments performed on $\mathrm{Bi_{2}Se_{3}}$ reveal the existence of a Surface-Resonance-State in the 2nd bulk band gap interpreted on the basis of fully relativistic ab-initio spin resolved photoemission calculations. Remarkably, the spin dependent relaxation of the hot carriers is well reproduced by a spin dynamics model considering two non-interacting electronic systems, derived from the excited surface and bulk states, with different electronic temperatures. △ Less

Submitted 17 September, 2014; originally announced September 2014.

Comments: 5 pages and 4 figures

Journal ref: Phys. Rev. Lett. 114, 097401 (2015)

Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Authors: Wei Li, A. Glen Birdwell, Matin Amani, Robert A. Burke, Xi Ling, Yi-Hsien Lee, Xuelei Liang, Lianmao Peng, Curt A. Richter, Jing Kong, David J. Gundlach, N. V. Nguyen

Abstract: Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a… ▽ More Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical points.These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 6 figures

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

Authors: Beena Kalisky, Eric M. Spanton, Hilary Noad, John R. Kirtley, Katja C. Nowack, Christopher Bell, Hiroki K. Sato, Masayuki Hosoda, Yanwu Xie, Yasuyuki Hikita, Carsten Woltmann, Georg Pfanzelt, Rainer Jany, Christoph Richter, Harold Y. Hwang, Jochen Mannhart, Kathryn A. Moler

Abstract: The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the int… ▽ More The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures. △ Less

Submitted 11 December, 2013; originally announced December 2013.

Journal ref: Nature Materials 12, 1091-1095 (2013)

LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces

Authors: M. P. Warusawithana, C. Richter, J. A. Mundy, P. Roy, J. Ludwig, S. Paetel, T. Heeg, A. A. Pawlicki, L. F. Kourkoutis, M. Zheng, M. Lee, B. Mulcahy, W. Zander, Y. Zhu, J. Schubert, J. N. Eckstein, D. A. Muller, C. Stephen Hellberg, J. Mannhart, D. G. Schlom

Abstract: Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the… ▽ More Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators LaAlO3 and SrTiO3 distinguish this rich system from conventional two-dimensional electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated with focus on the role of defects in the SrTiO3 while the LaAlO3 has been assumed perfect. Our experiments and first principles calculations show that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. While extrinsic defects including oxygen deficiency are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects, an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides a roadmap for identifying other interfaces where emergent behaviors await discovery. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Highly reproducible metal/graphene contacts and stable electrical performance by UV-Ozone treatment

Authors: Wei Li, Christina A. Hacker, Yiran Liang, Curt A. Richter, David J. Gundlach, Xuelei Liang, Lianmao Peng

Abstract: Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stabl… ▽ More Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stable and highly reproducible low contact resistance between metal and graphene is obtained without affecting the electrical properties of the graphene channel itself. △ Less

Submitted 29 May, 2013; v1 submitted 6 March, 2013; originally announced March 2013.

Comments: This paper has been withdrawn by the author due to the change of Figure 1 and we want to add more content

Direct k-space mapping of the electronic structure in an oxide-oxide interface

Authors: G. Berner, M. Sing, H. Fujiwara, A. Yasui, Y. Saitoh, A. Yamasaki, Y. Nishitani, A. Sekiyama, N. Pavlenko, T. Kopp, C. Richter, J. Mannhart, S. Suga, R. Claessen

Abstract: The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron s… ▽ More The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir. △ Less

Submitted 18 June, 2013; v1 submitted 13 January, 2013; originally announced January 2013.

Comments: 8 pages, 6 figures, incl. Supplemental Information

Journal ref: Phys. Rev. Lett. 110, 247601 (2013)

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

Authors: Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James Basham, Alex Boosalis, Xuelei Liang, Debdeep Jena, Curt A. Richter, Alan Seabaugh, David J. Gundlach, Huili G. Xing, N. V. Nguyen

Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detectin… ▽ More The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization. △ Less

Submitted 5 August, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Comments: 15 pages, 5 figures

Journal ref: Applied Physics Letters Applied Physics Letters Applied Physics Letters 102 12 123106-123106-5 (2013)

UV/Ozone treatment to reduce metal-graphene contact resistance

Authors: Wei Li, Yiran Liang, Dangmin Yu, Lianmao Peng, Kurt P. Pernstich, Tian Shen, A. R. Hight Walker, Guangjun Cheng, Christina A. Hacker, Curt A. Richter, Qiliang Li, David J. Gundlach, Xuelei Liang

Abstract: We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was foun… ▽ More We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Ω μm was achieved, while not significantly altering the electrical properties of the graphene channel region of devices. △ Less

Submitted 4 December, 2012; originally announced December 2012.

Comments: 17 pages, 5 figures

Electric-field-induced pyroelectric order and localization of the confined electrons in LaAlO3/SrTiO3 heterostructures

Authors: M. Rössle, K. W. Kim, A. Dubroka, P. Marsik, C. N. Wang, R. Jany, C. Richter, J. Mannhart, C. W. Schneider, A. Frano, P. Wochner, Y. Lu, B. Keimer, D. K. Shukla, J. Strempfer, C. Bernhard

Abstract: With infrared ellipsometry, x-ray diffraction, and electric transport measurements we investigated the electric-field-effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at low temperature and negative gate voltage is induced, or at least strongly enhanced, by a pyroelectric phase transition in SrTiO3 which strongly reduces t… ▽ More With infrared ellipsometry, x-ray diffraction, and electric transport measurements we investigated the electric-field-effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at low temperature and negative gate voltage is induced, or at least strongly enhanced, by a pyroelectric phase transition in SrTiO3 which strongly reduces the lattice polarizability and the subsequent Coulomb screening. In particular, we show that the charge localisation and the polar order of SrTiO3 both develop below about 50 K and exhibit similar, unipolar hysteresis loops as a function of the gate voltage. Our findings suggest that the pyroelectric order also plays an important role in the quantum phase transition at very low temperatures where superconductivity is suppressed by an electric field. △ Less

Submitted 21 September, 2012; originally announced September 2012.

Comments: 5 pages, 4 figures, supplementary material

Journal ref: Phys. Rev. Lett. 110, 136805 (2013)

Large Negative Electronic Compressibility of LaAlO3-SrTiO3 Interfaces with Ultrathin LaAlO3 Layers

Authors: V. Tinkl, M. Breitschaft, C. Richter, J. Mannhart

Abstract: A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be negative for carrier densities of \approx10^13/cm^2. At even smaller densities, a metal-to-insulator transition occurs. These local measurements… ▽ More A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility is found to be negative for carrier densities of \approx10^13/cm^2. At even smaller densities, a metal-to-insulator transition occurs. These local measurements corroborate earlier measurements of the electronic compressibility of LaAlO3-SrTiO3 interfaces obtained by measuring the capacitance of macroscopic metal-LaAlO3-SrTiO3 capacitors. △ Less

Submitted 27 July, 2012; originally announced July 2012.

Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces

Authors: B. Förg, C. Richter, J. Mannhart

Abstract: Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 1… ▽ More Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,°C. △ Less

Submitted 28 January, 2012; originally announced January 2012.

Comments: to be published in Applied Physics Letters

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Authors: Tian Shen, Wei Wu, Qingkai Yu, Curt A Richter, Randolph Elmquist, David Newell, Yong P. Chen

Abstract: We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated… ▽ More We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene. △ Less

Submitted 30 September, 2011; originally announced September 2011.

Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO$_3$/SrTiO$_3$ Interfaces

Authors: Lu Li, C. Richter, J. Mannhart, R. C. Ashoori

Abstract: A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-… ▽ More A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on growth conditions. We combine transport measurements with high-resolution magnetic torque magnetometry and report here evidence of magnetic ordering of the two-dimensional electron liquid at the interface. The magnetic ordering exists from well below the superconducting transition to up to 200 K, and is characterized by an in-plane magnetic moment. Our results suggest that there is either phase separation or coexistence between magnetic and superconducting states. The coexistence scenario would point to an unconventional superconducting phase in the ground state. △ Less

Submitted 1 May, 2011; originally announced May 2011.

Comments: 10 pages, 4 figures

Journal ref: Nature Physics 7, 762 (2011)