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Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound
Authors:
E. Longo,
A. Markou,
C. Felser,
M. Belli,
A. Serafini,
P. Targa,
D. Codegoni,
M. Fanciulli,
R. Mantovan
Abstract:
Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compou…
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Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compound MnPtSb with thickness (t) in the range from 1 to 6 nm. A combination of X-ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non-centrosymmetric MnPtSb films, with a clear (111)-orientation obtained on top of (0001) single-crystal sapphire substrates. The study of the thickness (t)-dependent magnetization dynamics of the MnPtSb(t)/Co(5nm)/Au(5nm) heterostructure revealed that the MnPtSb compound can be used as an efficient spin current generator, even at film thicknesses as low as 1 nm. By making use of spin pumping FMR, we measure a remarkable t-dependent spin-charge conversion in the MnPtSb layers, which clearly demonstrate the interfacial origin of the conversion. When interpreted as arising from the inverse Edelstein effect (IEE), the spin-charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches λIEE~3 nm, representing an extremely high spin-charge conversion efficiency at room temperature. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discover of their outstanding functionality are two ingredients which demonstrate the potentiality of such materials for future applications in spintronics.
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Submitted 26 July, 2023;
originally announced July 2023.
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Ultrafast Hidden Spin Polarization Dynamics of Bright and Dark Excitons in 2H-WSe$_2$
Authors:
Mauro Fanciulli,
David Bresteau,
Jérome Gaudin,
Shuo Dong,
Romain Géneaux,
Thierry Ruchon,
Olivier Tcherbakoff,
Ján Minár,
Olivier Heckmann,
Maria Christine Richter,
Karol Hricovini,
Samuel Beaulieu
Abstract:
We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin p…
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We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin polarization of bright and momentum-forbidden dark excitons. Our results reveal efficient chiroptical control of bright excitons' hidden spin polarization. Following optical photoexcitation, intervalley scattering between nonequivalent K-K' valleys leads to a decay of bright excitons' hidden spin polarization. Conversely, the ultrafast formation of momentum-forbidden dark excitons acts as a local spin polarization reservoir, which could be used for spin injection in van der Waals heterostructures involving multilayer transition metal dichalcogenides.
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Submitted 18 July, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
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Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion
Authors:
E. Longo,
L. Locatelli,
P. Tsipas,
A. Lintzeris,
A. Dimoulas,
M. Fanciulli,
M. Longo,
R. Mantovan
Abstract:
Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (…
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Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. In order to exploit such ideal topologically-protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and spin-charge conversion (SCC) is probed by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature, which is interpreted within the inverse Edelstein effect (IEE), thus resulting in a conversion efficiency lambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.
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Submitted 21 April, 2023;
originally announced April 2023.
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Collective topological spin dynamics in a correlated spin glass
Authors:
Juraj Krempaský,
Gunther Springholz,
Sunil Wilfred D'Souza,
Ondřej Caha,
Martin Gmitra,
Andreas Ney,
Carlos Antonio Fernandez Vaz,
Cinthia Piamonteze,
Mauro Fanciulli,
Dominik Kriegner,
Jonas A. Krieger,
Thomas Prokscha,
Zaher Salman,
Jan Minár,
J. Hugo Dil
Abstract:
The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric…
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The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric semiconductor is found to reverse with current pulses six orders of magnitude lower as for typical spin-orbit torque systems. Upon a switching event, the magnetic order spreads coherently and collectively over macroscopic distances through a correlated spin-glass state. Lastly, we present a novel methodology to controllably harness this stochastic magnetization dynamics, allowing us to detect spatiotemporal nucleation of topological spin textures we term ``skyrmiverres''.
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Submitted 23 December, 2022;
originally announced December 2022.
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Superconducting microresonators for electron spin resonance, the good, the bad, and the future
Authors:
Yaron Artzi,
Yakir Yishay,
Marco Fanciulli,
Moamen Jbara,
Aharon Blank
Abstract:
The field of electron spin resonance is in constant need to improve its capabilities. Among other things, this means having better resonators which would provide improved spin sensitivity, as well as enable larger microwave magnetic field power conversion factors. Surface micro resonators, made of small metallic patches on a dielectric substrate, provide very good absolute spin sensitivity and hig…
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The field of electron spin resonance is in constant need to improve its capabilities. Among other things, this means having better resonators which would provide improved spin sensitivity, as well as enable larger microwave magnetic field power conversion factors. Surface micro resonators, made of small metallic patches on a dielectric substrate, provide very good absolute spin sensitivity and high conversion factors due to their very small mode volume. However, such resonators suffer from having a relatively low quality factor, which offsets some of their significant potential advantages. The use of superconducting patches to replace the metallic layer seems like a reasonable and straightforward solution to the quality factor issue, at least for measurements carried out at cryogenic temperatures. Nevertheless, superconducting materials are not easily incorporated into setups requiring high magnetic fields, due to electric current vortices generated in the latter's surface. This makes the transition from normal conducing materials to superconductors highly nontrivial. Here we present the design, fabrication, and testing results of surface micro resonators made of yttrium barium copper oxide (YBCO) superconducting material. We show that with a unique experimental setup, these resonators can be made to operate well even at high fields of about 1.2 T. Furthermore, we analyze the effect of current vortices on the ESR signal and the spins' coherence times. Finally, we provide a head to head comparison of YBCO vs copper resonators of the same dimensions, which clearly shows their pros and cons and directs us to future potential developments and improvements in this field.
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Submitted 27 August, 2021; v1 submitted 8 June, 2021;
originally announced June 2021.
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Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
Authors:
Emanuele Longo,
Matteo Belli,
Mario Alia,
Martino Rimoldi,
Raimondo Cecchini,
Massimo Longo,
Claudia Wiemer,
Lorenzo Locatelli,
Gianluca Gubbiotti,
Marco Fanciulli,
Roberto Mantovan
Abstract:
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2T…
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Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.
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Submitted 16 April, 2021;
originally announced April 2021.
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Triple point fermions in ferroelectric GeTe
Authors:
Juraj Krempaský,
Laurent Nicolaï,
Martin Gmitra,
Houke Chen,
Mauro Fanciulli,
Eduardo B. Guedes,
Marco Caputo,
Milan Radović,
V. V. Volobuev,
Ondrej Caha,
Gunther Springholz,
Jan Minár,
J. Hugo Dil
Abstract:
Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory,…
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Ferroelectric GeTe is unveiled to exhibit an intriguing multiple non-trivial topology of the electronic band structure due to the existence of triple-point and type-II Weyl fermions, which goes well beyond the giant Rashba spin splitting controlled by external fields as previously reported. Using spin- and angle-resolved photoemission spectroscopy combined with ab initio density functional theory, the unique spin texture around the triple point caused by the crossing of one spin degenerate and two spin-split bands along the ferroelectric crystal axis is derived. This consistently reveals spin winding numbers that are coupled with time reversal symmetry and Lorentz invariance, which are found to be equal for both triple-point pairs in the Brillouin zone. The rich manifold of effects opens up promising perspectives for studying non-trivial phenomena and multi-component fermions in condensed matter systems.
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Submitted 3 December, 2020;
originally announced December 2020.
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Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films
Authors:
F. Alarab,
K. Hricovini,
B. Leikert,
L. Nicolai,
M. Fanciulli,
O. Heckmann,
M. Richter,
L. Prušakova,
Z. Jansa,
P. Šutta,
J. Rault,
P. Lefevre,
M. Muntwiller,
R. Claessen,
J. Minár
Abstract:
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high…
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We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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Submitted 25 November, 2020;
originally announced November 2020.
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Electromagnetic theory of Helicoidal Dichroism in reflection from magnetic structures
Authors:
Mauro Fanciulli,
David Bresteau,
Mekha Vimal,
Martin Luttmann,
Maurizio Sacchi,
Thierry Ruchon
Abstract:
We present the classical electromagnetic theory framework of reflection of a light beam carrying Orbital Angular Momentum (OAM) by an in-plane magnetic structure with generic symmetry. Depending on the magnetization symmetry, we find a change in the OAM content of the reflected beam due to magneto-optic interaction and an asymmetric far-field intensity profile. This leads to three types of Magneti…
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We present the classical electromagnetic theory framework of reflection of a light beam carrying Orbital Angular Momentum (OAM) by an in-plane magnetic structure with generic symmetry. Depending on the magnetization symmetry, we find a change in the OAM content of the reflected beam due to magneto-optic interaction and an asymmetric far-field intensity profile. This leads to three types of Magnetic Helicoidal Dichroism (MHD), observed when switching the OAM of the incoming beam, the magnetization sign, or both. In cases of sufficient symmetries, we establish analytical formulas which link an experimentally accessible MHD signal up to $10\%$ to the Magneto-Optical Kerr Effect (MOKE) constants. Magnetic vortices are particularly enlightening and promising targets, for which we explore the implications of our theory in the joint publication XX XXX XXXXXX.
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Submitted 25 May, 2020; v1 submitted 17 May, 2020;
originally announced May 2020.
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Magnetic helicoidal dichroism in reflection by magnetic vortices
Authors:
Thierry Ruchon,
Mauro Fanciulli
Abstract:
Identifying and imaging spin textures of ever more complex magnetic structures has become a major challenge in the past decade, especially at ultrashort timescales. Most of current approaches are based on the analysis of their polarization and magnetization-dependent reflectivities. Based on our joint publication XXX XX XXXXXX, we introduce a different concept, centered on the coupling of magnetic…
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Identifying and imaging spin textures of ever more complex magnetic structures has become a major challenge in the past decade, especially at ultrashort timescales. Most of current approaches are based on the analysis of their polarization and magnetization-dependent reflectivities. Based on our joint publication XXX XX XXXXXX, we introduce a different concept, centered on the coupling of magnetic structures with light beams carrying orbital angular momentum (OAM). Upon reflection by a magnetic vortex, an incoming beam with a unique value $\ell$ of OAM gets enriched in the neighboring OAM modes $\ell\pm 1$. It results in anisotropic far-field images, which are identified as a Magnetic Helicoidal Dichroism (MHD) signal. Their analysis allow to retrieve the complex magneto-optical constants with excellent precision. This method, which does not require any polarization-resolved analysis, is promising for a quick identification of spin textures, including with attosecond to femtosecond time resolutions.
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Submitted 25 May, 2020; v1 submitted 17 May, 2020;
originally announced May 2020.
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Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Saumya Mukherjee,
Mauro Fanciulli,
Jakub Schusser,
Olivier Heckmann,
Christine Richter,
Ján Minár,
Karol Hricovini,
Matthew D. Watson,
Cephise Cacho
Abstract:
The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-…
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The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.
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Submitted 7 June, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Spin-, time- and angle-resolved photoemission spectroscopy on WTe$_2$
Authors:
Mauro Fanciulli,
Jakub Schusser,
Min-I Lee,
Zakariae El Youbi,
Olivier Heckmann,
Maria Christine Richter,
Cephise Cacho,
Carlo Spezzani,
David Bresteau,
Jean-François Hergott,
Pascal D'Oliveira,
Olivier Tcherbakoff,
Thierry Ruchon,
Jan Minár,
Karol Hricovini
Abstract:
We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoe…
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We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoemission calculations provide insight into the spin polarization of electrons above the Fermi level in the region where Weyl points of WTe$_2$ are expected. We observe a spin accumulation above the Weyl points region, that is consistent with a spin-selective bottleneck effect due to the presence of spin polarized cone-like electronic structure. Our results support the feasibility of STARPES with HHG, which despite being experimentally challenging provides a unique way to study spin dynamics in photoemission.
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Submitted 13 December, 2019;
originally announced December 2019.
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Single spin-polarised Fermi surface in SrTiO$_3$ thin films
Authors:
Eduardo B. Guedes,
Stefan Muff,
Mauro Fanciulli,
Andrew P. Weber,
Marco Caputo,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radović,
J. Hugo Dil
Abstract:
The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growi…
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The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growing thin SrTiO$_3$ films on Nb doped SrTiO$_3$(001) substrates. This results in a single spin-polarised 2D Fermi surface, which bears potential as platform for Majorana physics. Based on our results it can furthermore be concluded that the 2DEG does not extend more than 2 unit cells into the film and that its properties depend on the amount of SrO$_x$ at the surface and possibly the dielectric response of the system.
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Submitted 25 May, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO$_2$ interface
Authors:
M. Belli,
M. Fanciulli,
R. de Sousa
Abstract:
The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here we present an experiment that uses the spin relaxation of dangling bonds at the S…
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The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO$_2$ interface as a probe of TLSs. We introduce a model that is able to explain the observed non-exponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy and its temperature dependence.
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Submitted 24 April, 2020; v1 submitted 3 April, 2019;
originally announced April 2019.
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Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
Authors:
E. Ferraro,
M. Fanciulli,
M. De Michielis
Abstract:
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employi…
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We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e. the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.
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Submitted 22 July, 2019; v1 submitted 3 April, 2019;
originally announced April 2019.
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Spin-resolved electronic response to the phase transition in MoTe$_2$
Authors:
Andrew P. Weber,
Philipp Rüßmann,
Nan Xu,
Stefan Muff,
Mauro Fanciulli,
Arnaud Magrez,
Philippe Bugnon,
Helmuth Berger,
Nicholas C. Plumb,
Ming Shi,
Stefan Blügel,
Phivos Mavropoulos,
J. Hugo Dil
Abstract:
The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of mom…
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The semimetal MoTe$_2$ is studied by spin- and angle- resolved photoemission spectroscopy to probe the detailed electronic structure underlying its broad range of response behavior. A novel spin-texture is uncovered in the bulk Fermi surface of the non-centrosymmetric structural phase that is consistent with first-principles calculations. The spin-texture is three-dimensional, both in terms of momentum dependence and spin-orientation, and is not completely suppressed above the centrosymmetry-breaking transition temperature. Two types of surface Fermi arc are found to persist well above the transition temperature. The appearance of a large Fermi arc depends strongly on thermal history, and the electron quasiparticle lifetimes are greatly enhanced in the initial cooling. The results indicate that polar instability with strong electron-lattice interactions exists near the surface when the bulk is largely in a centrosymmetric phase.
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Submitted 1 July, 2018;
originally announced July 2018.
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Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
Authors:
E. Ferraro,
M. Fanciulli,
M. De Michielis
Abstract:
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences t…
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A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.
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Submitted 30 October, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Determination of the time scale of photoemission from the measurement of spin polarization
Authors:
Mauro Fanciulli,
J. Hugo Dil
Abstract:
The Eisenbud-Wigner-Smith (EWS) time delay of photoemission depends on the phase term of the matrix element describing the transition. Because of an interference process between partial channels, the photoelectrons acquire a spin polarization which is also related to the phase term. The analytical model for estimating the time delay by measuring the spin polarization is reviewed in this manuscript…
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The Eisenbud-Wigner-Smith (EWS) time delay of photoemission depends on the phase term of the matrix element describing the transition. Because of an interference process between partial channels, the photoelectrons acquire a spin polarization which is also related to the phase term. The analytical model for estimating the time delay by measuring the spin polarization is reviewed in this manuscript. In particular, the distinction between scattering EWS and interfering EWS time delay will be introduced, providing an insight in the chronoscopy of photoemission. The method is applied to the recent experimental data for Cu(111) presented in M. Fanciulli et al., PRL 118, 067402 (2017), allowing to give better upper and lower bounds and estimates for the EWS time delays.
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Submitted 22 November, 2018; v1 submitted 15 June, 2018;
originally announced June 2018.
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Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises
Authors:
E. Ferraro,
M. Fanciulli,
M. De Michielis
Abstract:
The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control and manipulation in view of implementat…
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The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control and manipulation in view of implementation of fast single and two qubit operations through only electrical tuning. The presence of the environmental noise due to nuclear spins and charge traps, in addition to fluctuations in the applied magnetic field and charge fluctuations on the electrostatic gates adopted to confine the electrons, is taken into account including random magnetic field and random coupling terms in the Hamiltonian. The behavior of the return probability as a function of time for initial conditions of interest is presented. Moreover, through an envelope-fitting procedure on the return probabilities, coherence times are extracted when model parameters take values achievable experimentally in semiconducting devices.
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Submitted 16 April, 2018; v1 submitted 27 October, 2017;
originally announced October 2017.
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Observation of Wannier-Stark localization at the surface of BaTiO$_3$ films by photoemission
Authors:
Stefan Muff,
Nicolas Pilet,
Mauro Fanciulli,
Andrew P. Weber,
Christian Wessler,
Zoran Ristic,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radovic,
J. Hugo Dil
Abstract:
Observation of Bloch oscillations and Wannier-Stark localization of charge carriers is typically impossible in single-crystals, because an electric field higher than the breakdown voltage is required. In BaTiO$_3$ however, high intrinsic electric fields are present due to its ferroelectric properties. With angle-resolved photoemission we directly probe the Wannier-Stark localized surface states of…
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Observation of Bloch oscillations and Wannier-Stark localization of charge carriers is typically impossible in single-crystals, because an electric field higher than the breakdown voltage is required. In BaTiO$_3$ however, high intrinsic electric fields are present due to its ferroelectric properties. With angle-resolved photoemission we directly probe the Wannier-Stark localized surface states of the BaTiO$_3$ film-vacuum interface and show that this effect extends to thin SrTiO$_3$ overlayers. The electrons are found to be localized along the in-plane polarization direction of the BaTiO$_3$ film.
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Submitted 6 October, 2017;
originally announced October 2017.
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Spin-resolved electronic structure of ferroelectric α-GeTe and multiferroic Ge1-xMnxTe
Authors:
J. Krempasky,
M. Fanciulli,
J. Minár,
W. Khan,
M. Muntwiler,
F. Bertran,
S. Muff,
A. P. Weber,
V. N. Strocov,
V. V. Volobuiev,
G. Springholz,
J. H. Dil
Abstract:
Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the e…
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Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results, we derive a comprehensive model of the α-GeTe surface electronic structure which fits experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields.
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Submitted 14 August, 2017;
originally announced August 2017.
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Operando imaging of all-electric spin texture manipulation in ferroelectric and multiferroic Rashba semiconductors
Authors:
J. Krempaský,
S. Muff,
J. Minár,
N. Pilet,
M. Fanciulli,
A. P. Weber,
V. V. Volobuiev,
M. Gmitra,
C. A. F. Vaz,
V. Scagnoli,
G. Springholz,
J. H. Dil
Abstract:
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconducto…
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The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-xMnxTe operando SARPES reveals switching of the perpendicular spin component due to electric field induced magnetization reversal. This provides firm evidence of effective multiferroic coupling which opens up magnetoelectric functionality with a multitude of spin-switching paths in which the magnetic and electric order parameters are coupled through ferroelastic relaxation paths. This work thus provides a new type of magnetoelectric switching entangled with Rashba-Zeeman splitting in a multiferroic system.
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Submitted 26 July, 2017;
originally announced July 2017.
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Universal response of the type-II Weyl semimetals phase diagram
Authors:
P. Rüßmann,
A. P. Weber,
F. Glott,
N. Xu,
M. Fanciulli,
S. Muff,
A. Magrez,
P. Bugnon,
H. Berger,
M. Bode,
J. H. Dil,
S. Blügel,
P. Mavropoulos,
P. Sessi
Abstract:
The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic…
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The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic effects, such as the chiral anomaly, make Weyl semimetals a promising platform to develop radically new technology. Fully exploiting their potential requires going beyond the mere identification of materials and calls for a detailed characterization of their functional response, which is severely complicated by the coexistence of surface- and bulk-derived topologically protected quasiparticles, i.e., Fermi arcs and Weyl points, respectively. Here, we focus on the type-II Weyl semimetal class where we find a stoichiometry-dependent phase transition from a trivial to a non-trivial regime. By exploring the two extreme cases of the phase diagram, we demonstrate the existence of a universal response of both surface and bulk states to perturbations. We show that quasi-particle interference patterns originate from scattering events among surface arcs. Analysis reveals that topologically non-trivial contributions are strongly suppressed by spin texture. We also show that scattering at localized impurities generate defect-induced quasiparticles sitting close to the Weyl point energy. These give rise to strong peaks in the local density of states, which lift the Weyl node significantly altering the pristine low-energy Weyl spectrum. Visualizing the microscopic response to scattering has important consequences for understanding the unusual transport properties of this class of materials. Overall, our observations provide a unifying picture of the Weyl phase diagram.
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Submitted 1 June, 2017;
originally announced June 2017.
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Observation of a two-dimensional electron gas at CaTiO$_3$ film surfaces
Authors:
Stefan Muff,
Mauro Fanciulli,
Andrew P. Weber,
Nicolas Pilet,
Zoran Ristic,
Zhiming Wang,
Nicholas C. Plumb,
Milan Radovic,
J. Hugo Dil
Abstract:
The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO$_3$, grown by pulsed laser deposition, by means of angular-resolved photoelectron spectroscopy. The films show a c(4x2) surface reconstruction after the growth tha…
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The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO$_3$, grown by pulsed laser deposition, by means of angular-resolved photoelectron spectroscopy. The films show a c(4x2) surface reconstruction after the growth that is reduced to a p(2x2) reconstruction under UV-light. At the CaTiO$_3$ film surface, a two-dimensional electron gas (2DEG) is found with an occupied band width of 400 meV. With our findings CaTiO$_3$ is added to the group of oxides with a 2DEG at their surface. Our study widens the phase space to investigate strontium and barium doped CaTiO$_3$ and the interplay of ferroelectric properties with the 2DEG at oxide surfaces. This could open up new paths to tailor two-dimensional transport properties of these systems towards possible applications.
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Submitted 26 May, 2017;
originally announced May 2017.
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Selective probing of hidden spin-polarized states in inversion-symmetric bulk MoS2
Authors:
E. Razzoli,
T. Jaouen,
M. -L. Mottas,
B. Hildebrand,
G. Monney,
A. Pisoni,
S. Muff,
M. Fanciulli,
N. C. Plumb,
V. A. Rogalev,
V. N. Strocov,
J. Mesot,
M. Shi,
J. H. Dil,
H. Beck,
P. Aebi
Abstract:
Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer…
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Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer-locked spin-polarized electronic states can be selectively addressed by circularly-polarized light, therefore providing a novel route to probe these hidden spin-polarized states in inversion-symmetric systems as predicted by Zhang et al. [Nature Physics 10, 387 (2014)].
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Submitted 24 January, 2017;
originally announced January 2017.
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Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors
Authors:
J. Krempasky,
S. Muff,
F. Bisti,
M. Fanciulli,
H. Volfová,
A. Weber,
N. Pilet,
P. Warnicke,
H. Ebert,
J. Braun,
F. Bertran,
V. V. Volobuev,
J. Minár,
G. Springholz,
J. H. Dil,
V. N. Strocov
Abstract:
The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Her…
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The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Here we show that multiferroic (GeMn)Te inherits from its parent ferroelectric α-GeTe compound a giant Rashba splitting of three-dimensional bulk states which competes with the Zeeman spin splitting induced by the magnetic exchange interactions. The collinear alignment of ferroelectric and ferromagnetic polarization leads to an opening of a tunable Zeeman gap of up to 100 meV around the Dirac point of the Rashba bands, coupled with a change in spin texture by entanglement of magnetic and spin-orbit order. Through applications of magnetic fields, we demonstrate manipulation of spin- texture by spin resolved photoemission experiments, which is also expected for electric fields based on the multiferroic coupling. The control of spin helicity of the bands and its locking to ferromagnetic and ferroelectric order opens fascinating new avenues for highly multifunctional multiferroic Rashba devices suited for reprogrammable logic and/or nonvolatile memory applications.
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Submitted 5 June, 2016; v1 submitted 1 June, 2016;
originally announced June 2016.
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Giant g factor tuning of long-lived electron spins in Ge
Authors:
Anna Giorgioni,
Stefano Paleari,
Stefano Cecchi,
Emanuele Grilli,
Giovanni Isella,
Wolfgang Jantsch,
Marco Fanciulli,
Fabio Pezzoli
Abstract:
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prom…
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Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits in the mature framework of Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome such fundamental limitations by investigating a two dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally long spin relaxation and coherence times, eventually unveiling the potential of Ge in bridging the gap between spintronic concepts and semiconductor device physics. In particular, by tuning spin-orbit interaction via quantum confinement we demonstrate that the electron Landé g factor and its anisotropy can be engineered in our scalable and CMOS-compatible architectures over a range previously inaccessible for Si spintronics.
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Submitted 29 March, 2016;
originally announced March 2016.
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Spin polarization and attosecond time delay in photoemission from spin degenerate states of solids
Authors:
Mauro Fanciulli,
Henrieta Volfová,
Stefan Muff,
Jürgen Braun,
Hubert Ebert,
Jan Minár,
Ulrich Heinzmann,
J. Hugo Dil
Abstract:
After photon absorption, electrons from a dispersive band of a solid require a finite time in the photoemission process before being photoemitted as free particles, in line with recent attosecondresolved photoemission experiments. According to the Eisenbud-Wigner-Smith model, the time delay is due to a phase shift of different transitions that occur in the process. Such a phase shift is also at th…
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After photon absorption, electrons from a dispersive band of a solid require a finite time in the photoemission process before being photoemitted as free particles, in line with recent attosecondresolved photoemission experiments. According to the Eisenbud-Wigner-Smith model, the time delay is due to a phase shift of different transitions that occur in the process. Such a phase shift is also at the origin of the angular dependent spin polarization of the photoelectron beam, observable in spin degenerate systems without angular momentum transfer by the incident photon. We propose a semi-quantitative model which permits to relate spin and time scales in photoemission from condensed matter targets and to better understand spin- and angle-resolved photoemission spectroscopy (SARPES) experiments on spin degenerate systems. We also present the first experimental determination by SARPES of this time delay in a dispersive band, which is found to be greater than 26 as for electrons emitted from the sp-bulk band of the model system Cu(111).
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Submitted 29 September, 2016; v1 submitted 27 January, 2016;
originally announced January 2016.
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Valley blockade and multielectron spin-valley Kondo effect in silicon
Authors:
A. Crippa,
M. L. V. Tagliaferri,
D. Rotta,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
R. Wacquez,
M. Vinet,
E. Prati
Abstract:
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation…
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We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.
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Submitted 29 April, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
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Coherent Tunneling by Adiabatic Passage of an exchange-only spin qubit in a double quantum dot chain
Authors:
E. Ferraro,
M. De Michielis,
M. Fanciulli,
E. Prati
Abstract:
A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuab…
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A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuable architecture in the field of quantum computing for the implementation of quantum algorithms. The effect of the external control parameters as well as the effect of the dephasing on the coherent tunneling in the chain is studied. During adiabatic transport, within a constant energy degenerate eigenspace, the states in the double quantum dots internal to the chain are not populated, while transient populations of the mixed states in the external ones are predicted.
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Submitted 3 March, 2015; v1 submitted 5 September, 2014;
originally announced September 2014.
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Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture
Authors:
Davide Rotta,
Marco De Michielis,
Elena Ferraro,
Marco Fanciulli,
Enrico Prati
Abstract:
Scalability from single qubit operations to multi-qubit circuits for quantum information processing requires architecture-specific implementations. Semiconductor hybrid qubit architecture is a suitable candidate to realize large scale quantum information processing, as it combines a universal set of logic gates with fast and all-electrical manipulation of qubits. We propose an implementation of hy…
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Scalability from single qubit operations to multi-qubit circuits for quantum information processing requires architecture-specific implementations. Semiconductor hybrid qubit architecture is a suitable candidate to realize large scale quantum information processing, as it combines a universal set of logic gates with fast and all-electrical manipulation of qubits. We propose an implementation of hybrid qubits, based on Si Metal-Oxide-Semiconductor (MOS) quantum dots, compatible with the CMOS industrial technologic standards. We discuss the realization of multi-qubit circuits capable of fault-tolerant computation and quantum error correction, by evaluating the time and space resources needed for their implementation. As a result, the maximum density of quantum information is extracted from a circuit including 8 logical qubits encoded by the [[7,1,3]] Steane code. The corresponding surface density of logical qubits is 2.6 Mqubit/cm$^2$.
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Submitted 5 June, 2014;
originally announced June 2014.
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Effective Hamiltonian for the hybrid double quantum dot qubit
Authors:
E. Ferraro,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
E. Prati
Abstract:
Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector opera…
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Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behaviour of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.
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Submitted 12 June, 2013; v1 submitted 5 April, 2013;
originally announced April 2013.
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Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet
Authors:
E. Cinquanta,
E. Scalise,
D. Chiappe,
C. Grazianetti,
B. van den Broek,
M. Houssa,
M. Fanciulli,
A. Molle
Abstract:
By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form of silicon characterized by a vertically distorted honeycomb lattice. We show that 2D sp2-sp3 Si NSs are qualified by a prevailing Raman peak which can be assigned to a graphene-like E2g vibrational mode and that highly…
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By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form of silicon characterized by a vertically distorted honeycomb lattice. We show that 2D sp2-sp3 Si NSs are qualified by a prevailing Raman peak which can be assigned to a graphene-like E2g vibrational mode and that highly distorted superstructures are semiconductive whereas low distorted ones behave as semimetals.
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Submitted 2 May, 2013; v1 submitted 21 December, 2012;
originally announced December 2012.
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Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon
Authors:
G. Mazzeo,
E. Prati,
M. Belli,
G. Leti,
S. Cocco,
M. Fanciulli,
F. Guagliardo,
G. Ferrari
Abstract:
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magneti…
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We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states.
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Submitted 23 March, 2012;
originally announced March 2012.
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Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Authors:
Enrico Prati,
Marco De Michielis,
Matteo Belli,
Simone Cocco,
Marco Fanciulli,
Dharmraj Kotekar-Patil,
Matthias Ruoff,
Dieter P. Kern,
David A. Wharam,
Arjan Verduijn,
Giuseppe Tettamanzi,
Sven Rogge,
Benoit Roche,
Romain Wacquez,
Xavier Jehl,
Maud Vinet,
Marc Sanquer
Abstract:
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr…
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We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.
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Submitted 20 March, 2012;
originally announced March 2012.
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Adiabatic Charge Control in a Single Donor Atom Transistor
Authors:
Enrico Prati,
Matteo Belli,
Simone Cocco,
Guido Petretto,
Marco Fanciulli
Abstract:
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of…
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We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of their energy spectrum as a function of the back gate voltage, causing the crossing of the energy levels. We observe the sequential tunneling through the $D^{2-}$ and the $D^{3-}$ energy levels of the donor hybridized at the oxide interface at 4.2 K. Their respective states form an honeycomb pattern with the quantum dot states. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor, thus realizing a physical qubit for quantum information processing applications.
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Submitted 10 August, 2010; v1 submitted 18 May, 2010;
originally announced June 2010.
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Compact silicon double and triple dots realized with only two gates
Authors:
Mathieu Pierre,
Romain Wacquez,
Benoit Roche,
Xavier Jehl,
Marc Sanquer,
Maud Vinet,
Enrico Prati,
Matteo Belli,
Marco Fanciulli
Abstract:
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The m…
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We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
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Submitted 31 May, 2010;
originally announced May 2010.
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Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics
Authors:
Enrico Prati,
Matteo Belli,
Marco Fanciulli,
Giorgio Ferrari
Abstract:
We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in S…
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We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble model applies, the time domain charge fluctuation in the defect is used to determine the temperature of the few electron gas in the channel.
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Submitted 4 February, 2010; v1 submitted 29 January, 2010;
originally announced February 2010.
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Microwave Assisted Transport in a Single Donor Silicon Quantum Dot
Authors:
Enrico Prati,
Rossella Latempa,
Marco Fanciulli
Abstract:
Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunnel…
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Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunneling and microwave induced electron pumping regimes are revealed respectively at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first excited energy level of the $D_0$ energy of the donor. Such microwave assisted transport at zero bias enhances the resolution in the spectroscopy of the energy levels of the donor.
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Submitted 11 September, 2009; v1 submitted 31 July, 2008;
originally announced July 2008.
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Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation
Authors:
Enrico Prati,
Marco Fanciulli,
Alessandro Calderoni,
Giorgio Ferrari,
Marco Sampietro
Abstract:
Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface de…
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Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.
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Submitted 10 December, 2007;
originally announced December 2007.
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Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
Authors:
Enrico Prati,
Marco Fanciulli,
Alessandro Calderoni,
Giorgio Ferrari,
Marco Sampietro
Abstract:
We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. From t…
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We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. From the dc current excited into the MOSFET by the microwave field we determine the corresponding equivalent drain voltage. The RTS experimental data are in agreement with the prediction obtained with the model, making use of the voltage data measured with the independent dc microwave induced current. We conclude that when operating a MOSFET under microwave irradiation, as in single spin resonance detection, one has to pay attention into the effects related to microwave irradiation dependent RTS changes.
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Submitted 28 September, 2006;
originally announced September 2006.
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Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
Authors:
Enrico Prati,
Marco Fanciulli,
Giorgio Ferrari,
Marco Sampietro
Abstract:
We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and $^{3}$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is eithe…
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We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and $^{3}$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is either in-plane or perpendicular to the two dimensional electron gas. The experimental data can be explained by considering a model which includes the triplet state of the trapping center and the polarization of the channel electron gas.
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Submitted 28 December, 2005;
originally announced December 2005.
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Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon
Authors:
A. Ferretti,
M. Fanciulli,
A. Ponti,
A. Schweiger
Abstract:
Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments a…
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Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments address the spin-spin relaxation times and mechanisms and provide, through the electron spin echo envelope modulation (ESEEM) effect, information on the donor electron wave function. Experiments performed as a function of the pulse turning angle allowed us to measure the exponential relaxation and spectral diffusion times depurated by instantaneous diffusion. According to these results, isotopically purified samples are necessary to reduce the spectral diffusion contribution and the P shallow donors concentration plays a fundamental role in determining the intrinsic phase memory time. ESEEM peaks have been assigned to hyperfine-coupled silicon-29 nuclei at specific crystallographic positions on the basis of a spectral fit procedure including instrumental distortions.
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Submitted 19 October, 2005;
originally announced October 2005.
