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Direct observation of charge order in underdoped and optimally doped Bi$_{2}$(Sr,La)$_{2}$CuO$_{6+δ}$ by resonant inelastic x-ray scattering
Authors:
Y. Y. Peng,
M. Salluzzo,
X. Sun,
A. Ponti,
D. Betto,
A. M. Ferretti,
F. Fumagalli,
K. Kummer,
M. Le Tacon,
X. J. Zhou,
N. B. Brookes,
L. Braicovich,
G. Ghiringhelli
Abstract:
Charge order in underdoped and optimally doped high-$T_\mathrm{c}$ superconductors Bi$_{2}$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) is investigated by Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS). We have directly observed charge density modulation in the optimally doped Bi2201 at momentum transfer $Q_{\|} \simeq 0.23$ rlu, with smaller intensity and correlation length with respect to the…
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Charge order in underdoped and optimally doped high-$T_\mathrm{c}$ superconductors Bi$_{2}$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) is investigated by Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS). We have directly observed charge density modulation in the optimally doped Bi2201 at momentum transfer $Q_{\|} \simeq 0.23$ rlu, with smaller intensity and correlation length with respect to the underdoped sample. This demonstrates that short-range charge order in Bi2201 persists up to optimal doping, as in other hole-doped cuprates. We explored the nodal (diagonal) direction and found no charge order peak, confirming that charge order modulates only along the Cu-O bond directions. We measured the out-of-plane dependence of charge order, finding a flat response and no maxima at half integer \emph{L} values. This suggests there is no out-of-plane phase correlation in single layer Bi2201, at variance from YBa$_2$Cu$_3$O$_{6+x}$ and La$_{2-x}$(Ba,Sr)$_x$CuO$_4$. Combining our results with data from the literature we assess that charge order in Bi2201 exists in a large doping range across the phase diagram, i.e. $0.07 \lesssim p \lesssim 0.16$, demonstrating thereby that it is intimately entangled with the antiferromagnetic background, the pseudogap and superconductivity.
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Submitted 6 October, 2016;
originally announced October 2016.
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Few simple rules governing hydrogenation of graphene dots
Authors:
Matteo Bonfanti,
Simone Casolo,
Gian Franco Tantardini,
Alessandro Ponti,
Rocco Martinazzo
Abstract:
We investigated binding of hydrogen atoms to small Polycyclic Aromatic Hydrocarbons (PAHs) - i.e. graphene dots with hydrogen-terminated edges - using density functional theory and correlated wavefunction techniques. We considered a number of PAHs with 3 to 7 hexagonal rings and computed binding energies for most of the symmetry unique sites, along with the minimum energy paths for significant cas…
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We investigated binding of hydrogen atoms to small Polycyclic Aromatic Hydrocarbons (PAHs) - i.e. graphene dots with hydrogen-terminated edges - using density functional theory and correlated wavefunction techniques. We considered a number of PAHs with 3 to 7 hexagonal rings and computed binding energies for most of the symmetry unique sites, along with the minimum energy paths for significant cases. The chosen PAHs are small enough to not present radical character at their edges, yet show a clear preference for adsorption at the edge sites which can be attributed to electronic effects. We show how the results, as obtained at different level of theory, can be rationalized in detail with the help of few simple concepts derivable from a tight-binding model of the $π$ electrons.
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Submitted 21 July, 2011;
originally announced July 2011.
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Electron spin echo relaxation and envelope modulation of phosphorus shallow donors in silicon
Authors:
A. Ferretti,
M. Fanciulli,
A. Ponti,
A. Schweiger
Abstract:
Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments a…
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Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon, since quantum computation can be realized through the manipulation of electron and/or nuclear spins. We here report on two-pulse electron spin echo experiments on phosphorus shallow donors in natural and 28Si-enriched silicon epilayers doped with 10^16 cm-3 P donors. The experiments address the spin-spin relaxation times and mechanisms and provide, through the electron spin echo envelope modulation (ESEEM) effect, information on the donor electron wave function. Experiments performed as a function of the pulse turning angle allowed us to measure the exponential relaxation and spectral diffusion times depurated by instantaneous diffusion. According to these results, isotopically purified samples are necessary to reduce the spectral diffusion contribution and the P shallow donors concentration plays a fundamental role in determining the intrinsic phase memory time. ESEEM peaks have been assigned to hyperfine-coupled silicon-29 nuclei at specific crystallographic positions on the basis of a spectral fit procedure including instrumental distortions.
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Submitted 19 October, 2005;
originally announced October 2005.
