Showing 1–11 of 11 results for author: Roche, B

Readout of relaxation rates by nonadiabatic pumping spectroscopy

Authors: Roman-Pascal Riwar, Benoît Roche, Xavier Jehl, Janine Splettstoesser

Abstract: We put forward nonadiabatic charge pumping as a method for accessing the different charge relaxation rates as well as the relaxation rates of excited orbital states in double-quantum-dot setups, based on extremely size-limited quantum dots and dopant systems. The rates are obtained in a well-separated manner from plateaus, occurring when comparing the steady-state current for reversed driving cycl… ▽ More We put forward nonadiabatic charge pumping as a method for accessing the different charge relaxation rates as well as the relaxation rates of excited orbital states in double-quantum-dot setups, based on extremely size-limited quantum dots and dopant systems. The rates are obtained in a well-separated manner from plateaus, occurring when comparing the steady-state current for reversed driving cycles. This yields a reliable readout independent of any fitting parameters. Importantly, the nonadiabatic pumping spectroscopy essentially exploits the same driving scheme as the operation of these devices generally employs. We provide a detailed analysis of the working principle of the readout scheme as well as of possible errors, thereby demonstrating its broad applicability. The precise knowledge of relaxation rates is highly relevant for the implementation of time-dependently operated devices, such as electron pumps for metrology or qubits in quantum information. △ Less

Submitted 9 February, 2016; originally announced February 2016.

Comments: 14 pages, 5 figures

Journal ref: Phys. Rev. B 93, 235401 (2016)

Intrinsic and extrinsic decay of edge magnetoplasmons in graphene

Authors: N. Kumada, P. Roulleau, B. Roche, M. Hashisaka, H. Hibino, I. Petkovic, D. C. Glattli

Abstract: We investigate intrinsic and extrinsic decay of edge magnetoplasmons (EMPs) in graphene quantum Hall (QH) systems by high-frequency electronic measurements. From EMP resonances in disk shaped graphene, we show that the dispersion relation of EMPs is nonlinear due to interactions, giving rise to intrinsic decay of EMP wavepacket. We also identify extrinsic dissipation mechanisms due to interaction… ▽ More We investigate intrinsic and extrinsic decay of edge magnetoplasmons (EMPs) in graphene quantum Hall (QH) systems by high-frequency electronic measurements. From EMP resonances in disk shaped graphene, we show that the dispersion relation of EMPs is nonlinear due to interactions, giving rise to intrinsic decay of EMP wavepacket. We also identify extrinsic dissipation mechanisms due to interaction with localized states in bulk graphene from the decay time of EMP wavepackets. We indicate that, owing to the unique linear and gapless band structure, EMP dissipation in graphene can be lower than that in GaAs systems. △ Less

Submitted 16 July, 2014; originally announced July 2014.

Comments: 5 pages

Journal ref: Phys. Rev. Lett. 113, 266601 (2014)

A hybrid metal/semiconductor electron pump for quantum metrology

Authors: X. Jehl, B. Voisin, T. Charron, P. Clapera, S. Ray, B. Roche, M. Sanquer, S. Djordjevic, L. Devoille, R. Wacquez, M. Vinet

Abstract: Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck cons… ▽ More Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck constant, to voltage, resistance and current. We present here single-island hybrid metal/semiconductor transistor pumps which combine the simplicity and efficiency of Coulomb blockade in metals with the unsurpassed performances of silicon switches. Robust and simple pumping at 650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the calculated value, well within the 1.5e-3 uncertainty of the measurement setup. Multi-charge pumping can be performed. The simple design fully integrated in an industrial CMOS process makes it an ideal candidate for national measurement institutes to realize and share a future quantum ampere. △ Less

Submitted 26 March, 2013; v1 submitted 26 February, 2013; originally announced February 2013.

Journal ref: Phys. Rev. X 3, 021012 (2013)

A two-atom electron pump

Authors: B. Roche, R. -P. Riwar, B. Voisin, E. Dupont-Ferrier, R. Wacquez, M. Vinet, M. Sanquer, J. Splettstoesser, X. Jehl

Abstract: The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising functionalities for future nanoelectronics consists in manipulating a single electron over two dopants. Here we demonstrate electron pumping through two phosphorus donors in… ▽ More The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising functionalities for future nanoelectronics consists in manipulating a single electron over two dopants. Here we demonstrate electron pumping through two phosphorus donors in series implanted in a silicon nanowire. While quantized pumping is achieved in the low frequency adiabatic regime, we observe remarkable features at higher frequency when the charge transfer is limited by the different tunneling rates. The transitions between quantum states are modeled involving a Landau-Zener transition, allowing to reproduce in detail the characteristic signatures observed in the non-adiabatic regime. △ Less

Submitted 5 December, 2012; originally announced December 2012.

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Authors: Benoit Roche, Eva Dupont-Ferrier, Benoit Voisin, Manuel Cobian, Xavier Jehl, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Marc Sanquer

Abstract: We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors… ▽ More We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO$_2$ interface and electric field in the wire show that the values found are consistent with the device geometry. △ Less

Submitted 12 July, 2012; originally announced July 2012.

Journal ref: Phys. Rev. Lett. 108, 206812 (2012)

Coupling and coherent electrical control of two dopants in a silicon nanowire

Authors: E. Dupont-Ferrier, B. Roche, B. Voisin, X. Jehl, R. Wacquez, M. Vinet, M. Sanquer, S. De Franceschi

Abstract: Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we… ▽ More Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we can electrically couple two donors embedded in a multi-gate silicon transistor, and induce coherent oscillations in their charge states by means of microwave signals. We measure single-electron tunneling across the two donors, which reveals their energy spectrum. The lowest energy states, corresponding to a single electron located on either of the two donors, form a two-level system (TLS) well separated from all other electronic levels. Gigahertz driving of this TLS results in a quantum interference pattern associated with the absorption or the stimulated emission of up to ten microwave photons. We estimate a charge dephasing time of 0.3 nanoseconds, consistent with other types of charge quantum bits. Here, however, the relatively short coherence time can be counterbalanced by fast operation signals (in principle up to 1 terahertz) as allowed by the large empty energy window separating ground and excited states in donor atoms. The demonstrated coherent coupling of two donors constitutes an essential step towards donor-based quantum computing devices in silicon. △ Less

Submitted 8 July, 2012; originally announced July 2012.

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

Authors: Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P. Kern, David A. Wharam, Arjan Verduijn, Giuseppe Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet, Marc Sanquer

Abstract: We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr… ▽ More We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices. △ Less

Submitted 20 March, 2012; originally announced March 2012.

Comments: 4 Figures

A tunable, dual mode field-effect or single electron transistor

Authors: Benoît Roche, Benoit Voisin, Xavier Jehl, Romain Wacquez, Marc Sanquer, Maud Vinet, Veeresh Deshpande, Bernard Previtali

Abstract: A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative… ▽ More A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel. △ Less

Submitted 18 January, 2012; originally announced January 2012.

Journal ref: Appl. Phys. Lett. 100, 032107 (2012)

Single-dopant resonance in a single-electron transistor

Authors: V. N. Golovach, X. Jehl, M. Houzet, M. Pierre, B. Roche, M. Sanquer, L. I. Glazman

Abstract: Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic in… ▽ More Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate equations theory developed in parallel with the experiment. △ Less

Submitted 26 December, 2010; originally announced December 2010.

Comments: 16 pages, 8 figures

Journal ref: Phys. Rev. B 83, 075401 (2011)

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

Authors: Mathieu Pierre, Benoît Roche, Romain Wacquez, Xavier Jehl, Marc Sanquer, Maud Vinet

Abstract: We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by th… ▽ More We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realisation of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances towards the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire. △ Less

Submitted 2 May, 2011; v1 submitted 1 June, 2010; originally announced June 2010.

Comments: 7 pages, 6 figures

Journal ref: Journal of Applied Physics 109, 084346 (2011)

Compact silicon double and triple dots realized with only two gates

Authors: Mathieu Pierre, Romain Wacquez, Benoit Roche, Xavier Jehl, Marc Sanquer, Maud Vinet, Enrico Prati, Matteo Belli, Marco Fanciulli

Abstract: We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The m… ▽ More We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted. △ Less

Submitted 31 May, 2010; originally announced May 2010.

Comments: 3 pages, 4 figures

Journal ref: Applied Physics Letters 95, 242107 (2009)