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Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
Authors:
E. Ferraro,
M. Fanciulli,
M. De Michielis
Abstract:
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employi…
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We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e. the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.
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Submitted 22 July, 2019; v1 submitted 3 April, 2019;
originally announced April 2019.
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Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
Authors:
E. Ferraro,
M. Fanciulli,
M. De Michielis
Abstract:
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences t…
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A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.
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Submitted 30 October, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises
Authors:
E. Ferraro,
M. Fanciulli,
M. De Michielis
Abstract:
The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control and manipulation in view of implementat…
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The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control and manipulation in view of implementation of fast single and two qubit operations through only electrical tuning. The presence of the environmental noise due to nuclear spins and charge traps, in addition to fluctuations in the applied magnetic field and charge fluctuations on the electrostatic gates adopted to confine the electrons, is taken into account including random magnetic field and random coupling terms in the Hamiltonian. The behavior of the return probability as a function of time for initial conditions of interest is presented. Moreover, through an envelope-fitting procedure on the return probabilities, coherence times are extracted when model parameters take values achievable experimentally in semiconducting devices.
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Submitted 16 April, 2018; v1 submitted 27 October, 2017;
originally announced October 2017.
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Valley blockade and multielectron spin-valley Kondo effect in silicon
Authors:
A. Crippa,
M. L. V. Tagliaferri,
D. Rotta,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
R. Wacquez,
M. Vinet,
E. Prati
Abstract:
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation…
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We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.
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Submitted 29 April, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
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Coherent Tunneling by Adiabatic Passage of an exchange-only spin qubit in a double quantum dot chain
Authors:
E. Ferraro,
M. De Michielis,
M. Fanciulli,
E. Prati
Abstract:
A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuab…
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A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuable architecture in the field of quantum computing for the implementation of quantum algorithms. The effect of the external control parameters as well as the effect of the dephasing on the coherent tunneling in the chain is studied. During adiabatic transport, within a constant energy degenerate eigenspace, the states in the double quantum dots internal to the chain are not populated, while transient populations of the mixed states in the external ones are predicted.
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Submitted 3 March, 2015; v1 submitted 5 September, 2014;
originally announced September 2014.
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Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture
Authors:
Davide Rotta,
Marco De Michielis,
Elena Ferraro,
Marco Fanciulli,
Enrico Prati
Abstract:
Scalability from single qubit operations to multi-qubit circuits for quantum information processing requires architecture-specific implementations. Semiconductor hybrid qubit architecture is a suitable candidate to realize large scale quantum information processing, as it combines a universal set of logic gates with fast and all-electrical manipulation of qubits. We propose an implementation of hy…
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Scalability from single qubit operations to multi-qubit circuits for quantum information processing requires architecture-specific implementations. Semiconductor hybrid qubit architecture is a suitable candidate to realize large scale quantum information processing, as it combines a universal set of logic gates with fast and all-electrical manipulation of qubits. We propose an implementation of hybrid qubits, based on Si Metal-Oxide-Semiconductor (MOS) quantum dots, compatible with the CMOS industrial technologic standards. We discuss the realization of multi-qubit circuits capable of fault-tolerant computation and quantum error correction, by evaluating the time and space resources needed for their implementation. As a result, the maximum density of quantum information is extracted from a circuit including 8 logical qubits encoded by the [[7,1,3]] Steane code. The corresponding surface density of logical qubits is 2.6 Mqubit/cm$^2$.
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Submitted 5 June, 2014;
originally announced June 2014.
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Effective Hamiltonian for the hybrid double quantum dot qubit
Authors:
E. Ferraro,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
E. Prati
Abstract:
Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector opera…
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Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behaviour of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.
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Submitted 12 June, 2013; v1 submitted 5 April, 2013;
originally announced April 2013.
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Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Authors:
Enrico Prati,
Marco De Michielis,
Matteo Belli,
Simone Cocco,
Marco Fanciulli,
Dharmraj Kotekar-Patil,
Matthias Ruoff,
Dieter P. Kern,
David A. Wharam,
Arjan Verduijn,
Giuseppe Tettamanzi,
Sven Rogge,
Benoit Roche,
Romain Wacquez,
Xavier Jehl,
Maud Vinet,
Marc Sanquer
Abstract:
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr…
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We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.
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Submitted 20 March, 2012;
originally announced March 2012.
