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Plasmonic superchiral lattice resonances in the mid-infrared
Authors:
Francesco Mattioli,
Giuseppe Mazzeo,
Giovanna Longhi,
Sergio Abbate,
Giovanni Pellegrini,
Michele Celebrano,
Marco Finazzi,
Lamberto Duò,
Chiara Zanchi,
Matteo Tommasini,
Marialilia Pea,
Sara Cibella,
Filippo Sciortino,
Leonetta Baldassarre,
Alessandro Nucara,
Michele Ortolani,
Paolo Biagioni
Abstract:
Recent efforts in the field of surface-enhanced spectroscopies have focused on the paradigm of superchirality, entailing the engineering of the local electromagnetic fields to boost the enantiospecific interaction between light and chiral molecules. In this framework, approaches based on both metallic and dielectric nanostructures have been proposed and have also recently been extended to vibratio…
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Recent efforts in the field of surface-enhanced spectroscopies have focused on the paradigm of superchirality, entailing the engineering of the local electromagnetic fields to boost the enantiospecific interaction between light and chiral molecules. In this framework, approaches based on both metallic and dielectric nanostructures have been proposed and have also recently been extended to vibrational circular dichroism in the mid-infrared. In this work, we design, fabricate and characterize arrays of chiral plasmonic slits featuring enhanced chiral fields in the mid-infrared. We exploit collective lattice resonances to further enhance the local intensity and to generate sharp features in the circular dichroism spectra of the platform. Such features are ideally suited to test the superchiral coupling with the vibrational resonances of chiral molecules.
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Submitted 8 July, 2019;
originally announced July 2019.
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Valley blockade and multielectron spin-valley Kondo effect in silicon
Authors:
A. Crippa,
M. L. V. Tagliaferri,
D. Rotta,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
R. Wacquez,
M. Vinet,
E. Prati
Abstract:
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation…
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We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.
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Submitted 29 April, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
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Effective Hamiltonian for the hybrid double quantum dot qubit
Authors:
E. Ferraro,
M. De Michielis,
G. Mazzeo,
M. Fanciulli,
E. Prati
Abstract:
Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector opera…
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Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behaviour of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.
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Submitted 12 June, 2013; v1 submitted 5 April, 2013;
originally announced April 2013.
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Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon
Authors:
G. Mazzeo,
E. Prati,
M. Belli,
G. Leti,
S. Cocco,
M. Fanciulli,
F. Guagliardo,
G. Ferrari
Abstract:
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magneti…
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We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states.
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Submitted 23 March, 2012;
originally announced March 2012.
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Germanium electrostatic quantum dot with integrated charge detector in an MOS structure
Authors:
G. Mazzeo,
E. Yablonovitch,
H. W. Jiang
Abstract:
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the Germanium and an hybrid design with an electron quantum dot and hole transistor for the charge detection. The hole transistor, using with NiGe source and drain contacts…
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We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the Germanium and an hybrid design with an electron quantum dot and hole transistor for the charge detection. The hole transistor, using with NiGe source and drain contacts, despite the modest low temperature carrier mobility of 450 cm2/Vs, has shown a sensitivity to the dot electric potential sufficient to detect single charges tunneling in and out of the quantum dot. The device is realized with a two level gate stack, with the top level used to attract electrons and the lower one to define the electron confinement potential and accumulate the hole transistor. The possibility to improve the device operation using a Al2O3/SiGe/Ge multilayer for the confinement of electrons at a smoother interface is discussed.
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Submitted 30 August, 2010;
originally announced August 2010.
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Kuehn and Mazzeo Reply
Authors:
Reimer Kuehn,
Giorgio Mazzeo
Abstract:
We reply to a comment of Van Enter, Kuelske and Maes (cond-mat/0005176) on our letter "Critical Behavior of the Randomly Spin-Diluted 2-d Ising Model - A Grand Ensemble Approach", Phys. Rev. Lett. {\bf 73}, 2268-2271 (1994).
We reply to a comment of Van Enter, Kuelske and Maes (cond-mat/0005176) on our letter "Critical Behavior of the Randomly Spin-Diluted 2-d Ising Model - A Grand Ensemble Approach", Phys. Rev. Lett. {\bf 73}, 2268-2271 (1994).
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Submitted 10 May, 2000;
originally announced May 2000.
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Critical behaviour of the 2d spin diluted Ising model via the equilibrium ensemble approach
Authors:
Giorgio Mazzeo,
Reimer Kuehn
Abstract:
The equilibrium ensemble approach to disordered systems is used to investigate the critical behaviour of the two dimensional Ising model in presence of quenched random site dilution. The numerical transfer matrix technique in semi- infinite strips of finite width, together with phenomenological renormalization and conformal invariance, is particularly suited to put the equilibrium ensemble appro…
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The equilibrium ensemble approach to disordered systems is used to investigate the critical behaviour of the two dimensional Ising model in presence of quenched random site dilution. The numerical transfer matrix technique in semi- infinite strips of finite width, together with phenomenological renormalization and conformal invariance, is particularly suited to put the equilibrium ensemble approach to work. A new method to extract with great precision the critical temperature of the model is proposed and applied. A more systematic finite-size scaling analysis than in previous numerical studies has been performed. A parallel investigation, along the lines of the two main scenarios currently under discussion, namely the logarithmic correction scenario (with critical exponents fixed in the Ising universality class) versus the weak universality scenario (critical exponents varying with the degree of disorder), is carried out. In interpreting our data, maximum care is costantly taken to be open in both directions. A critical discussion shows that, still, an unambiguous discrimination between the two scenarios is not possible on the basis of the available finite-size data.
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Submitted 19 July, 1999;
originally announced July 1999.
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A Transfer Matrix study of the staggered BCSOS model
Authors:
Enrico Carlon,
Giorgio Mazzeo,
Henk van Beijeren
Abstract:
The phase diagram of the staggered six vertex, or body centered solid on solid model, is investigated by transfer matrix and finite size scaling techniques. The phase diagram contains a critical region, bounded by a Kosterlitz-Thouless line, and a second order line describing a deconstruction transition. In part of the phase diagram the deconstruction line and the Kosterlitz-Thouless line approa…
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The phase diagram of the staggered six vertex, or body centered solid on solid model, is investigated by transfer matrix and finite size scaling techniques. The phase diagram contains a critical region, bounded by a Kosterlitz-Thouless line, and a second order line describing a deconstruction transition. In part of the phase diagram the deconstruction line and the Kosterlitz-Thouless line approach each other without merging, while the deconstruction changes its critical behaviour from Ising-like to a different universality class. Our model has the same type of symmetries as some other two-dimensional models, such as the fully frustrated XY model, and may be important for understanding their phase behaviour. The thermal behaviour for weak staggering is intricate. It may be relevant for the description of surfaces of ionic crystals of CsCl structure.
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Submitted 17 October, 1996;
originally announced October 1996.
