Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Authors:
Enrico Prati,
Marco De Michielis,
Matteo Belli,
Simone Cocco,
Marco Fanciulli,
Dharmraj Kotekar-Patil,
Matthias Ruoff,
Dieter P. Kern,
David A. Wharam,
Arjan Verduijn,
Giuseppe Tettamanzi,
Sven Rogge,
Benoit Roche,
Romain Wacquez,
Xavier Jehl,
Maud Vinet,
Marc Sanquer
Abstract:
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electr…
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We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.
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Submitted 20 March, 2012;
originally announced March 2012.
