Showing 1–34 of 34 results for author: Isella, G

Strong Charge-Photon Coupling in Planar Germanium Enabled by Granular Aluminium Superinductors

Authors: Marián Janík, Kevin Roux, Carla Borja Espinosa, Oliver Sagi, Abdulhamid Baghdadi, Thomas Adletzberger, Stefano Calcaterra, Marc Botifoll, Alba Garzón Manjón, Jordi Arbiol, Daniel Chrastina, Giovanni Isella, Ioan M. Pop, Georgios Katsaros

Abstract: High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is… ▽ More High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here we have integrated a granular aluminium resonator, having a characteristic impedance exceeding the resistance quantum, with a germanium double quantum dot and demonstrate strong charge-photon coupling with a rate of $g_\text{c}/2π= (566 \pm 2)$ MHz. This was achieved due to the realisation of a wireless ohmmeter, which allows \emph{in situ} measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 k$Ω$ (1 nH per square) is now possible. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates. △ Less

Submitted 3 July, 2024; originally announced July 2024.

A gate tunable transmon qubit in planar Ge

Authors: Oliver Sagi, Alessandro Crippa, Marco Valentini, Marian Janik, Levon Baghumyan, Giorgio Fabris, Lucky Kapoor, Farid Hassani, Johannes Fink, Stefano Calcaterra, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junctio… ▽ More Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Strong hole-photon coupling in planar Ge: probing the charge degree and Wigner molecule states

Authors: Franco De Palma, Fabian Oppliger, Wonjin Jang, Stefano Bosco, Marián Janík, Stefano Calcaterra, Georgios Katsaros, Giovanni Isella, Daniel Loss, Pasquale Scarlino

Abstract: Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling.… ▽ More Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in a planar Ge, and microwave photons in a high-impedance ($Z_\mathrm{r} = 1.3 ~ \mathrm{k}Ω$) superconducting quantum interference device (SQUID) array resonator. Our investigation reveals vacuum-Rabi splittings with coupling strengths up to $g_{0}/2π= 260 ~ \mathrm{MHz}$, and a cooperativity of $C \sim 100$, dependent on DQD tuning, confirming the strong charge-photon coupling regime within planar Ge. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strongly-correlated Wigner molecule (WM) states that emerge in Ge QDs. The observed enhanced coherence of the WM excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: 22 pages, 12 figures

Automated long-range compensation of an rf quantum dot sensor

Authors: Joseph Hickie, Barnaby van Straaten, Federico Fedele, Daniel Jirovec, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Georgios Katsaros, Natalia Ares

Abstract: Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an appro… ▽ More Charge sensing is a sensitive technique for probing quantum devices, of particular importance for spin qubit readout. To achieve good readout sensitivities, the proximity of the charge sensor to the device to be measured is a necessity. However, this proximity also means that the operation of the device affects, in turn, the sensor tuning and ultimately the readout sensitivity. We present an approach for compensating for this cross-talk effect allowing for the gate voltages of the measured device to be swept in a 1 V x 1 V window while maintaining a sensor configuration chosen by a Bayesian optimiser. Our algorithm is a key contribution to the suite of fully automated solutions required for the operation of large quantum device architectures. △ Less

Submitted 3 October, 2023; originally announced October 2023.

Parity-conserving Cooper-pair transport and ideal superconducting diode in planar Germanium

Authors: Marco Valentini, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, Juan Aguilera Servin, Kushagra Aggarwal, Marian Janik, Thomas Adletzberger, Rubén Seoane Souto, Martin Leijnse, Jeroen Danon, Constantin Schrade, Erik Bakkers, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the… ▽ More Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $\sin \left( 2 \varphi \right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform. △ Less

Submitted 16 November, 2023; v1 submitted 12 June, 2023; originally announced June 2023.

All rf-based tuning algorithm for quantum devices using machine learning

Authors: Barnaby van Straaten, Federico Fedele, Florian Vigneau, Joseph Hickie, Daniel Jirovec, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Georgios Katsaros, Natalia Ares

Abstract: Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurem… ▽ More Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurements. We demonstrate an algorithm that automatically tunes double quantum dots using only radio-frequency reflectometry. Exploiting the high bandwidth of radio-frequency measurements, the tuning was completed within a few minutes without prior knowledge about the device architecture. Our results show that it is possible to eliminate the need for transport measurements for quantum dot tuning, paving the way for more scalable device architectures. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Optical manipulation of the Rashba effect in germanium quantum wells

Authors: S. Rossi, E. Talamas Simola, M. Raimondo, M. Acciarri, J. Pedrini, A. Balocchi, X. Marie, G. Isella, F. Pezzoli

Abstract: The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. T… ▽ More The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a threefold enhancement of the circular polarization degree of the direct transition is obtained by increasing the pump power over a 2kW/cm$^2$ range. This marked variation reflects an efficient modulation of the spin population and is further supported by dedicated investigations of the indirect gap transition. This study demonstrates a viable strategy to engineer the spin-orbit Hamiltonian through contactless optical excitation and opens the way towards the electro-optical manipulation of spins in quantum devices based on group-IV heterostructures. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Journal ref: Adv. Optical Mater. 2022, 2201082

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Authors: Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella, Abderraouf Boucherif

Abstract: A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patt… ▽ More A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface. △ Less

Submitted 28 March, 2022; originally announced March 2022.

Comments: 27 pages and 4 figures along with 11 figures in supplementary information

Dynamics of hole singlet triplet qubits with large g-factor differences

Authors: Daniel Jirovec, Philipp M. Mutter, Andrea Hofmann, Josip Kukucka, Alessandro Crippa, Frederico Martins, Andrea Ballabio, Daniel Chrastina, Giovanni Isella, Guido Burkard, Georgios Katsaros

Abstract: The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener… ▽ More The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

Authors: B. Severin, D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M. J. Carballido, S. Svab, A. V. Kuhlmann, F. R. Braakman, S. Geyer, F. N. M. Froning, H. Moon, M. A. Osborne, D. Sejdinovic, G. Katsaros, D. M. Zumbühl, G. A. D. Briggs, N. Ares

Abstract: The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scra… ▽ More The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning. △ Less

Submitted 27 July, 2021; originally announced July 2021.

A singlet triplet hole spin qubit in planar Ge

Authors: Daniel Jirovec, Andrea Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, Josip Kukucka, Oliver Sagi, Frederico Martins, Jaime Saez-Mollejo, Ivan Prieto, Maksim Borovkov, Jordi Arbiol, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the c… ▽ More Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $μ$s which we extend beyond 150 $μ$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies. △ Less

Submitted 7 April, 2021; v1 submitted 27 November, 2020; originally announced November 2020.

Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states

Authors: T. Guillet, C. Zucchetti, A. Marty, G. Isella, C. Vergnaud, Q. Barbedienne, H. Jaffrès, N. Reyren, J. -M. George, A. Fert, M. Jamet

Abstract: The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in m… ▽ More The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states. △ Less

Submitted 31 October, 2020; originally announced November 2020.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 103, 064411 (2021)

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Authors: Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napoltani, Jacopo Frigerio, Andrea Ballabio, Giovani Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou

Abstract: The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen… ▽ More The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Comments: 19 pages, 5 figures, to be published at New J. Phys

Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits

Authors: Andrea Hofmann, Daniel Jirovec, Maxim Borovkov, Ivan Prieto, Andrea Ballabio, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, Georgios Katsaros

Abstract: We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In… ▽ More We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit. △ Less

Submitted 13 October, 2019; originally announced October 2019.

Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)

Authors: T. Guillet, C. Zucchetti, Q. Barbedienne, A. Marty, G. Isella, L. Cagnon, C. Vergnaud, N. Reyren, J. -M. George, A. Fert, M. Jamet

Abstract: Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, henc… ▽ More Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term which is linear in current density j and magnetic field B, hence odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I = 10 $μ$A (or j = 0.33 A/m) and B = 1 T, it represents 0.5 % of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance. We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than $\sim$58 k$_B$. The highly developed technologies on semiconductor platforms would allow the rapid optimization of devices based on this phenomenon. △ Less

Submitted 11 June, 2019; originally announced June 2019.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 124, 027201 (2020)

Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime

Authors: I. L. Drichko, A. A. Dmitriev, V. A. Malysh, I. Yu. Smirnov, Yu. M. Galperin, H. von Känel, M. Kummer, G. Isella, D. Chrastina

Abstract: The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi structures with quantum wells in a wide frequency range (30-1200 MHz). The experimental frequency dependences of the real part of ac conductance $σ_1$ h… ▽ More The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi structures with quantum wells in a wide frequency range (30-1200 MHz). The experimental frequency dependences of the real part of ac conductance $σ_1$ have been interpreted on the basis of the model presuming hops between localized electronic states belonging to isolated clusters. At high frequencies, dominating clusters are pairs of close states; upon a decrease in frequency, large clusters that merge into an infinite percolation cluster as the frequency tends to zero become important. In this case, the frequency dependences of the ac conductance can be represented by a universal curve. The scaling parameters and their magnetic-field dependence have been determined. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Comments: 9 pages, 12 figures, 1 table

Journal ref: JETP 126, 246 (2018)

Magnetotransport in Bi$_2$Se$_3$ thin films epitaxially grown on Ge(111)

Authors: T. Guillet, A. Marty, C. Beigné, C. Vergnaud, M. -T. Dau, P. Noël, J. Frigerio, G. Isella, M. Jamet

Abstract: Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to… ▽ More Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aim at combining the long spin diffusion length of Ge with the spin-momentum locking at the surface of Bi$_2$Se$_3$. We first performed a thorough structural analysis of Bi$_2$Se$_3$ films using electron and x-ray diffraction as well as atomic force microscopy. Then, magnetotransport measurements at low temperature showed the signature of weak antilocalization as a result of two-dimensional transport in the topologically protected surface states of Bi$_2$Se$_3$. Interestingly, the magnetotransport measurements also point out that the conduction channel can be tuned between the Bi$_2$Se$_3$ film and the Ge layer underneath by means of the bias voltage or the applied magnetic field. This result suggests that the Bi$_2$Se$_3$/Ge junction is a promising candidate for tuning spin-related phenomena at interfaces between TIs and semiconductors. △ Less

Submitted 2 August, 2018; originally announced August 2018.

Comments: 18 pages, 8 figures

Journal ref: AIP Adv. 8, 115125 (2018)

Effective g factor of 2D holes in strained Ge quantum wells

Authors: I. L. Drichko, A. A. Dmitriev, V. A. Malysh, I. Yu. Smirnov, H. von Känel, M. Kummer, D. Chrastina, G. Isella

Abstract: The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the… ▽ More The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 \times 10^{11}$~to $6.2 \times 10^{11}~\text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the $\mathrm{g}_{\perp}$-factor of each sample was determined. The $\mathrm{g}_{\perp}$-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band. △ Less

Submitted 11 April, 2018; originally announced April 2018.

Comments: 4 pages, 5 figures

Mid Infrared Nonlinear Plasmonics using Germanium Nanoantennas on Silicon Substrates

Authors: Marco P. Fischer, Aaron Riede, Kevin Gallacher, Jacopo Frigerio, Giovanni Pellegrini, Michele Ortolani, Douglas J. Paul, Giovanni Isella, Alfred Leitenstorfer, Paolo Biagioni, Daniele Brida

Abstract: We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light source tunable between 3 and 5 micrometer wavelength on a silicon substrate. To observe nonlinearity in this challenging spectral region, a high-power femtoseco… ▽ More We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light source tunable between 3 and 5 micrometer wavelength on a silicon substrate. To observe nonlinearity in this challenging spectral region, a high-power femtosecond laser system equipped with parametric frequency conversion in combination with an all-reflective confocal microscope setup is employed. We show spatially resolved maps of the linear scattering cross section and the nonlinear emission of single isolated antenna structures. A clear third order power dependence as well as the mid-infrared emission spectra prove the nonlinear nature of the light emission. Simulations support the observed resonance length of the double rod antenna and demonstrate that the field enhancement inside the antenna material is responsible for the nonlinear frequency mixing. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Enhancement of Spin Currents in a Lattice near the Curie Point

Authors: Marco Finazzi, Federico Bottegoni, Carlo Zucchetti, Giovanni Isella, Franco Ciccacci

Abstract: We show that pure spin currents carried by conduction electrons injected into a paramagnetic lattice of mutually interacting localized magnetic moments can be enhanced close to the Curie temperature by the exchange interaction between the lattice sites and the non vanishing spin density associated with the spin current. The latter partially aligns the magnetic moments of the lattice, generating a… ▽ More We show that pure spin currents carried by conduction electrons injected into a paramagnetic lattice of mutually interacting localized magnetic moments can be enhanced close to the Curie temperature by the exchange interaction between the lattice sites and the non vanishing spin density associated with the spin current. The latter partially aligns the magnetic moments of the lattice, generating a flow of paramagnons that contribute to the total spin current. △ Less

Submitted 6 July, 2018; v1 submitted 17 January, 2018; originally announced January 2018.

Non-local opto-electrical spin injection and detection in germanium at room temperature

Authors: Fabien Rortais, Carlo Zucchetti, Lavinia Ghirardini, Alberto Ferrari, Céline Vergnaud, Julie Widiez, Alain Marty, Jean-Philippe Attané, Henri Jaffrès, Jean-Marie George, Michele Celebrano, Giovanni Isella, Franco Ciccacci, Marco Finazzi, Federico Bottegoni, Matthieu Jamet

Abstract: Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best… ▽ More Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Comments: 14 pages and 5 figures

Giant g factor tuning of long-lived electron spins in Ge

Authors: Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli

Abstract: Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prom… ▽ More Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits in the mature framework of Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome such fundamental limitations by investigating a two dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally long spin relaxation and coherence times, eventually unveiling the potential of Ge in bridging the gap between spintronic concepts and semiconductor device physics. In particular, by tuning spin-orbit interaction via quantum confinement we demonstrate that the electron Landé g factor and its anisotropy can be engineered in our scalable and CMOS-compatible architectures over a range previously inaccessible for Si spintronics. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Journal ref: Nature Communications 7, 13886 (2016)

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

Authors: F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, Leo Miglio

Abstract: We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the… ▽ More We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Journal ref: Appl. Phys. Lett. 108, 262103 (2016)

Optical Activation of Germanium Plasmonic Antennas in the Mid Infrared

Authors: Marco P. Fischer, Christian Schmidt, Emilie Sakat, Johannes Stock, Antonio Samarelli, Jacopo Frigerio, Michele Ortolani, Douglas J. Paul, Giovanni Isella, Alfred Leitenstorfer, Paolo Biagioni, Daniele Brida

Abstract: Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recomb… ▽ More Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination red-shifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas. △ Less

Submitted 10 June, 2016; v1 submitted 21 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. Lett. 117, 047401 (2016)

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Authors: Jacopo Frigerio, Andrea Ballabio, Giovanni Isella, Emilie Sakat, Paolo Biagioni, Monica Bollani, Enrico Napolitani, Costanza Manganelli, Michele Virgilio, Alexander Grupp, Marco P. Fischer, Daniele Brida, Kevin Gallacher, Douglas J. Paul, Leonetta Baldassarre, Paolo Calvani, Valeria Giliberti, Alessandro Nucara, Michele Ortolani

Abstract: Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, f… ▽ More Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 - 4800 cm$^{-1}$ range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pumping in the near-infrared, we found weak but significant dependence of relaxation times on the static doping level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in n-type germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature. △ Less

Submitted 20 January, 2016; originally announced January 2016.

Comments: 18 pages, 10 figures

Journal ref: Phys. Rev. B 94, 085202 (2016)

Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates

Authors: E. Vitiello, M. Virgilio, A. Giorgioni, J. Frigerio, E. Gatti, S. De Cesari, E. Bonera, E. Grilli, G. Isella, F. Pezzoli

Abstract: The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a l… ▽ More The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a low temperature circular polarization degree of about 85% despite an off-resonance excitation of more than 300 meV. By photoluminescence (PL) measurements and tight binding calculations we show that this exceptionally high value is due to the peculiar energy dependence of the optically-induced electron spin population. Finally, our observation of the direct gap doublet clarifies that the light hole contribution, previously considered to be negligible, can dominate the room temperature PL even at low tensile strain values of about 0.2%. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. B 92, 201203(R) (2015)

Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers

Authors: Leonetta Baldassarre, Eugenio Calandrini, Antonio Samarelli, Kevin Gallacher, Douglas J. Paul, Jacopo Frigerio, Giovanni Isella, Emilie Sakat, Marco Finazzi, Paolo Biagioni, Michele Ortolani

Abstract: The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the differ… ▽ More The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film. △ Less

Submitted 20 February, 2015; originally announced February 2015.

Comments: Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Spin photovoltaic cell

Authors: F. Bottegoni, M. Celebrano, M. Bollani, P. Biagioni, G. Isella, F. Ciccacci, M. Finazzi

Abstract: Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be powered by a spin voltage generator able to drive spins out of equilibrium and produce two spatially well-separated populations with opposite spin orientation. S… ▽ More Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be powered by a spin voltage generator able to drive spins out of equilibrium and produce two spatially well-separated populations with opposite spin orientation. Such a generator should work at room temperature, be highly integrable with existing semiconductor technology, and work with neither ferromagnetic materials nor externally applied magnetic fields. We have matched these requirements by realizing the spintronic equivalent of a photovoltaic cell. While the latter spatially separates photoexcited electron and hole charges, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite spin. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). This allows creating a light diffraction pattern with spatially-modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules. △ Less

Submitted 1 April, 2014; originally announced April 2014.

Germanium crystals on silicon show their light

Authors: F. Pezzoli, F. Isa, G. Isella, C. V. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Kaenel, Leo Miglio

Abstract: Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to extend Si functionalities, as exemplified by lasing action of strained-Ge on Si substrates, has brought the material back to attention. Yet despite these advances, n… ▽ More Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to extend Si functionalities, as exemplified by lasing action of strained-Ge on Si substrates, has brought the material back to attention. Yet despite these advances, non-radiative transitions, induced by crystal defects originating from the Ge/Si interface, continue to be a serious bottleneck. Here we demonstrate the drastic emission enhancement achieved via control and mitigation over the parasitic activity of defects in micronscale Ge/Si crystals. We unravel how defects affect interband luminescence and minimize their influence by controlling carrier diffusion with band-gap-engineered reflectors. We finally extended this approach designing efficient quantum well emitters. Our results pave the way for the large-scale implementation of advanced electronic and photonic structures unaffected by the ubiquitous presence of defects developed at epitaxial interfaces. △ Less

Submitted 21 June, 2013; originally announced June 2013.

Journal ref: Phys. Rev. Applied 1, 044005 (2014)

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Authors: G. M. Vanacore, M. Chaigneau, N. Barrett, M. Bollani, F. Boioli, M. Salvalaglio, F. Montalenti, N. Manini, L. Caramella, P. Biagioni, D. Chrastina, G. Isella, O. Renault, M. Zani, R. Sordan, G. Onida, R. Ossikovski, H. -J. Drouhin, A. Tagliaferri

Abstract: Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio c… ▽ More Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function mapping, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale. △ Less

Submitted 6 June, 2013; originally announced June 2013.

Comments: 40 pages, 11 figures, submitted to Physical Review B

Journal ref: Physical Review B 88, 115309 (2013)

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Authors: F. Pezzoli, L. Qing, A. Giorgioni, G. Isella, E. Grilli, M. Guzzi, H. Dery

Abstract: Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal betw… ▽ More Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right- and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime. △ Less

Submitted 17 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. B 88, 045204 (2013)

Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature

Authors: Federico Bottegoni, Alberto Ferrari, Stefano Cecchi, Marco Finazzi, Franco Ciccacci, Giovanni Isella

Abstract: We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong Γ to L scattering whi… ▽ More We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong Γ to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is in good agreement with the electron spin polarization expected for optical orientation at the direct gap of Ge. △ Less

Submitted 12 February, 2013; v1 submitted 8 February, 2013; originally announced February 2013.

Optical spin injection and spin lifetime in Ge heterostructures

Authors: F. Pezzoli, F. Bottegoni, D. Trivedi, F. Ciccacci, A. Giorgioni, P. Li, S. Cecchi, E. Grilli, Y. Song, M. Guzzi, H. Dery, G. Isella

Abstract: We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yieldi… ▽ More We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is found to be ~0.5 ps and it is governed by transitions between heavy and light hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoretical analysis of the electrons spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime. △ Less

Submitted 22 November, 2011; originally announced November 2011.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 108, 156603 (2012)

Strain selectivity of SiGe wet chemical etchants

Authors: M. Stoffel, A. Malachias, T. Merdzhanova, F. Cavallo, G. Isella, D. Chrastina, H. von Kaenel, A. Rastelli, O. G. Schmidt

Abstract: We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants… ▽ More We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets. △ Less

Submitted 28 January, 2008; originally announced January 2008.

Comments: 13 pages, 4 figures, regular paper