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Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
Authors:
Sara Varotto,
Luca Nessi,
Stefano Cecchi,
Jagoda Sławińska,
Paul Noël,
Simone Petrò,
Federico Fagiani,
Alessandro Novati,
Matteo Cantoni,
Daniela Petti,
Edoardo Albisetti,
Marcio Costa,
Raffaella Calarco,
Marco Buongiorno Nardelli,
Manuel Bibes,
Silvia Picozzi,
Jean-Philippe Attané,
Laurent Vila,
Riccardo Bertacco,
Christian Rinaldi
Abstract:
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit…
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Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material.
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Submitted 13 March, 2021;
originally announced March 2021.
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Mapping the band structure of GeSbTe phase change alloys around the Fermi level
Authors:
Jens Kellner,
Gustav Bihlmayer,
Marcus Liebmann,
Sebastian Otto,
Christian Pauly,
Jos Emiel Boschker,
Valeria Bragaglia,
Stefano Cecchi,
Rui Ning Wang,
Volker L. Deringer,
Philipp Küppers,
Priyamvada Bhaskar,
Evangelos Golias,
Jaime Sánchez-Barriga,
Richard Dronskowski,
Thomas Fauster,
Oliver Rader,
Raffaella Calarco,
Markus Morgenstern
Abstract:
Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence…
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Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.
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Submitted 17 January, 2018; v1 submitted 29 August, 2017;
originally announced August 2017.
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Ferroelectric control of the spin texture in germanium telluride
Authors:
C. Rinaldi,
S. Varotto,
M. Asa,
J. Slawinska,
J. Fujii,
G. Vinai,
S. Cecchi,
R. Calarco,
I. Vobornik,
G. Panaccione,
S. Picozzi,
R. Bertacco
Abstract:
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted…
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The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or outwards ferroelectric polarizations display opposite sense of circulation of spin in bulk Rashba bands, as seen by spin and angular resolved photoemission experiments. Our results represent the first experimental demonstration of ferroelectric control of the spin texture in a semiconductor, a fundamental milestone towards the exploitation of the non-volatile electrically switchable spin texture of GeTe in spintronic devices.
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Submitted 21 July, 2017;
originally announced July 2017.
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Giant g factor tuning of long-lived electron spins in Ge
Authors:
Anna Giorgioni,
Stefano Paleari,
Stefano Cecchi,
Emanuele Grilli,
Giovanni Isella,
Wolfgang Jantsch,
Marco Fanciulli,
Fabio Pezzoli
Abstract:
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prom…
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Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits in the mature framework of Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome such fundamental limitations by investigating a two dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally long spin relaxation and coherence times, eventually unveiling the potential of Ge in bridging the gap between spintronic concepts and semiconductor device physics. In particular, by tuning spin-orbit interaction via quantum confinement we demonstrate that the electron Landé g factor and its anisotropy can be engineered in our scalable and CMOS-compatible architectures over a range previously inaccessible for Si spintronics.
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Submitted 29 March, 2016;
originally announced March 2016.
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Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature
Authors:
Federico Bottegoni,
Alberto Ferrari,
Stefano Cecchi,
Marco Finazzi,
Franco Ciccacci,
Giovanni Isella
Abstract:
We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong Γ to L scattering whi…
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We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong Γ to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is in good agreement with the electron spin polarization expected for optical orientation at the direct gap of Ge.
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Submitted 12 February, 2013; v1 submitted 8 February, 2013;
originally announced February 2013.
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Optical spin injection and spin lifetime in Ge heterostructures
Authors:
F. Pezzoli,
F. Bottegoni,
D. Trivedi,
F. Ciccacci,
A. Giorgioni,
P. Li,
S. Cecchi,
E. Grilli,
Y. Song,
M. Guzzi,
H. Dery,
G. Isella
Abstract:
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yieldi…
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We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is found to be ~0.5 ps and it is governed by transitions between heavy and light hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoretical analysis of the electrons spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime.
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Submitted 22 November, 2011;
originally announced November 2011.
