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Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces
Authors:
Julien Bréhin,
Luis M. Vicente Arche,
Sara Varotto,
Srijani Mallik,
Jean-Philippe Attané,
Laurent Vila,
Agnès Barthélémy,
Nicolas Bergeal,
Manuel Bibes
Abstract:
The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashb…
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The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashba spin-orbit coupling. It is then coined the Edelstein effect (EE), by which a bias voltage -- generating a charge current -- produces a transverse spin density, i.e. a magnetization. Interestingly, 2D systems are sensitive to voltage gating, which provides an extra handle to control the EE. Here, we show that the sign of the EE in a SrTiO$_3$ 2DEG can be controlled by a gate voltage. We propose various logic devices harnessing the dual control of the spin density by current and gate voltages and discuss the potential of our findings for gate-tunable non-reciprocal electronics.
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Submitted 2 October, 2023;
originally announced October 2023.
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All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases
Authors:
Fernando Gallego,
Felix Trier,
Srijani Mallik,
Julien Bréhin,
Sara Varotto,
Luis Moreno Vicente-Arche,
Tanay Gosavy,
Chia-Ching Lin,
Jean-René Coudevylle,
Lucía Iglesias,
Félix Casanova,
Ian Young,
Laurent Vila,
Jean-Philippe Attané,
Manuel Bibes
Abstract:
The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large sp…
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The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures.
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Submitted 25 September, 2023;
originally announced September 2023.
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Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
Authors:
S. Teresi,
N. Sebe,
T. Frottier,
J. Patterson,
A. Kandazoglou,
P. Noël,
P. Sgarro,
D. Térébénec,
N. Bernier,
F. Hippert,
J. -P. Attané,
L. Vila,
P. Noé,
M. Cosset-Chéneau
Abstract:
Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniq…
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Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques which are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials has also proven difficult due to their fragile structure and low spin conductance. We present the fabrication of a spin-orbit readout device from the topological insulator Sb2Te3 deposited by large-scale industrial magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, we measured a sizeable output voltage that can be unambiguously ascribed to a spin-charge interconversion process.
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Submitted 23 June, 2023; v1 submitted 18 April, 2023;
originally announced April 2023.
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Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes
Authors:
Dhananjay Tiwari,
Martin Christoph Scheuerlein,
Mahdi Jaber,
Eric Gautier,
Laurent Vila,
Jean-Philippe Attané,
Michael Schöbitz,
Aurélien Masseboeuf,
Tim Hellmann,
Jan P. Hofmann,
Wolfgang Ensinger,
Olivier Fruchart
Abstract:
We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate porous templates, with lengths several tens of micrometers, diameters from 100nm to 500nm and wall thicknesses from 10nm to 80nm. The resistivity is…
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We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate porous templates, with lengths several tens of micrometers, diameters from 100nm to 500nm and wall thicknesses from 10nm to 80nm. The resistivity is $\sim 1.5\times10^{-6}\mathrm{Ω/m}$, and the anisotropic magnetoresistance~(AMR) of 0.2-0.3%, one order of magnitude larger~(resp. smaller) than in the bulk material, which we attribute to the resistance at grain boundaries. We determined the azimuthal anisotropy field from M(H) AMR loops of single tubes contacted electrically. Its magnitude is around 10mT, and tends to increase with the tube wall thickness, as well as the Co content. However, surprisingly it does not dependent much on the diameter nor on the curvature.
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Submitted 10 February, 2023;
originally announced February 2023.
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Non-local magnon transconductance in extended magnetic insulating films.\\ Part I: spin diode effect
Authors:
Ryuhei Kohno,
Kyongmo An,
Eric Clot,
Vladimir V. Naletov,
Nicolas Thiery,
Laurent Vila,
Richard Schlitz,
Nathan Beaulieu,
Jamal Ben Youssef,
Madjid Anane,
Vincent Cros,
Hugo Merbouche,
Thomas Hauet,
Vladislav E. Demidov,
Sergej O. Demokritov,
Gregoire de Loubens,
Olivier Klein
Abstract:
This review provides a comprehensive study of the nonlinear transport properties of magnons, which are electrically emitted or absorbed inside extended YIG films by spin transfer effects via a YIG$\vert$Pt interface. Our purpose is to experimentally elucidate the pertinent picture behind the asymmetric electrical variation of the magnon transconductance analogous to an electric diode. The feature…
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This review provides a comprehensive study of the nonlinear transport properties of magnons, which are electrically emitted or absorbed inside extended YIG films by spin transfer effects via a YIG$\vert$Pt interface. Our purpose is to experimentally elucidate the pertinent picture behind the asymmetric electrical variation of the magnon transconductance analogous to an electric diode. The feature is rooted in the variation of the density of low-lying spin excitations via an electrical shift of the magnon chemical potential. As the intensity of the spin transfer increases in the forward direction (regime of magnon emission), the transport properties of low-energy magnon go through 3 distinct regimes: \textit{i)} at low currents, where the spin current is a linear function of the electrical current, the spin transport is ballistic and set by the film thickness; \textit{ii)} for amplitudes of the order of the damping compensation threshold, it switches to a highly correlated regime limited by magnon-magnon relaxation process and marked by a saturation of the magnon transconductance. Here the main bias, that controls the magnon density, are thermal fluctuations beneath the emitter. \textit{iii)} As the temperature under the emitter approaches the Curie temperature, scattering with high-energy magnons dominates, leading to diffusive transport. We note that such sequence of transport regimes bears analogy with electron hydrodynamic transport in ultra-pure media predicted by Radii Gurzhi. This study restricted to low energy part of the magnon manifold complements part II of this review\cite{kohno_2F}, which concentrates instead on the whole spectrum of propagating magnons.
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Submitted 11 June, 2023; v1 submitted 15 October, 2022;
originally announced October 2022.
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Non-local magnon transconductance in extended magnetic insulating films.\\Part II: two-fluid behavior
Authors:
Ryuhei Kohno,
Kyongmo An,
Eric Clot,
Vladimir V. Naletov,
Nicolas Thiery,
Laurent Vila,
Richard Schlitz,
Nathan Beaulieu,
Jamal Ben Youssef,
Madjid Anane,
Vincent Cros,
Hugo Merbouche,
Thomas Hauet,
Vladislav E. Demidov,
Sergej O. Demokritov,
Gregoire de Loubens,
Olivier Klein
Abstract:
This review presents a comprehensive study of the spatial dispersion of propagating magnons electrically emitted in extended yttrium-iron garnet (YIG) films by the spin transfer effects across a YIG$\vert$Pt interface. Our goal is to provide a generic framework to describe the magnon transconductance inside magnetic films. We experimentally elucidate the relevant spectral contributions by studying…
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This review presents a comprehensive study of the spatial dispersion of propagating magnons electrically emitted in extended yttrium-iron garnet (YIG) films by the spin transfer effects across a YIG$\vert$Pt interface. Our goal is to provide a generic framework to describe the magnon transconductance inside magnetic films. We experimentally elucidate the relevant spectral contributions by studying the lateral decay of the magnon signal. While most of the injected magnons do not reach the collector, the propagating magnons can be split into two-fluids: \textit{i)} a large fraction of high-energy magnons carrying energy of about $k_B T_0$, where $T_0$ is the lattice temperature, with a characteristic decay length in the sub-micrometer range, and \textit{ii)} a small fraction of low-energy magnons, which are particles carrying energy of about $\hbar ω_K$, where $ω_K/(2 π)$ is the Kittel frequency, with a characteristic decay length in the micrometer range. Taking advantage of their different physical properties, the low-energy magnons can become the dominant fluid \textit{i)} at large spin transfer rates for the bias causing the emission of magnons, \textit{ii)} at large distance from the emitter, \textit{iii)} at small film thickness, or \textit{iv)} for reduced band mismatch between the YIG below the emitter and the bulk due to variation of the magnon concentration. This broader picture complements part I \cite{kohno_SD}, which focuses solely on the nonlinear transport properties of low-energy magnons.
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Submitted 11 June, 2023; v1 submitted 15 October, 2022;
originally announced October 2022.
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Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas
Authors:
Cécile Grezes,
Aurélie Kandazoglou,
Maxen Cosset-Cheneau,
Luis Arche,
Paul Noël,
Paolo Sgarro,
Stephane Auffret,
Kevin Garello,
Manuel Bibes,
Laurent Vila,
Jean-Philippe Attané
Abstract:
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs usi…
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Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.
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Submitted 7 June, 2022;
originally announced June 2022.
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Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet
Authors:
M. Cosset-Chéneau,
M. Husien Fahmy,
A. Kandazoglou,
C. Grezes,
A. Brenac,
S. Teresi,
P. Sgarro,
P. Warin,
A. Marty,
V. T. Pham,
J. -P. Attané,
L. Vila
Abstract:
The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their fe…
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The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials.
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Submitted 23 June, 2023; v1 submitted 31 May, 2022;
originally announced May 2022.
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Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling
Authors:
D. Q. To,
T. H. Dang,
L. Vila,
J. P. Attané,
M. Bibes,
H. Jaffrès
Abstract:
Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba…
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Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data.
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Submitted 8 January, 2022;
originally announced January 2022.
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Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control
Authors:
Yu Fu,
Jing Li,
Jules Papin,
Paul Noel,
Salvatore Teresi,
Maxen Cosset-Cheneau,
Cecile Grezes,
Thomas Guillet,
Candice Thomas,
Yann-Michel Niquet,
Philippe Ballet,
Tristan Meunier,
Jean-Philippe Attane,
Albert Fert,
Laurent Vila
Abstract:
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, w…
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Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gate, the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1 \% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics.
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Submitted 14 February, 2023; v1 submitted 30 November, 2021;
originally announced November 2021.
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Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy
Authors:
A. Sidi El Valli,
V. Iurchuk,
G. Lezier,
I. Bendjeddou,
R. Lebrun,
N. Lamard,
A. Litvinenko,
J. Langer,
J. Wrona,
L. Vila,
R. Sousa,
I. L. Prejbeanu,
B. Dieny,
U. Ebels
Abstract:
Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendicular anisotropy (PMA) of both the polarizing and the free layer. The magnetization of the polarizing layer is fixed out of plane, while the free laye…
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Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendicular anisotropy (PMA) of both the polarizing and the free layer. The magnetization of the polarizing layer is fixed out of plane, while the free layer thickness is adjusted so that its magnetization orientation changes from in plane to out of plane. The rectification dc output voltage lies in the mV range for moderate rf powers, with a signal to noise ratio of 10 to 100 for Prf = -25dBm. It shows a strong dependence on the dimensions of the MTJ: it increases by a factor of 5 to 6 when reducing the diameter from 150nm to 20nm. This enhancement can be doubled when reducing the FL thickness from 1.8nm to 1.6nm. This dimensional enhancement is attributed to the change of the effective anisotropy of the excited free layer, and the MTJ resistance. The results are of interest for the design of spintronic based rf detectors with optimized sensitivity.
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Submitted 27 October, 2021;
originally announced October 2021.
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Bright and dark states of two distant macrospins strongly coupled by phonons
Authors:
Kyongmo An,
Ryuhei Kohno,
Artem N. Litvinenko,
Rafael Lopes Seeger,
Vladimir V. Naletov,
Laurent Vila,
Gregoire de Loubens,
Jamal Ben Youssef,
Nicolas Vukadinovic,
Gerrit E. W. Bauer,
Andrei N. Slavin,
Vasyl S. Tiberkevich,
Olivier Klein
Abstract:
We study the collective dynamics of two distant magnets coherently coupled by acoustic phonons that are transmitted through an intercalated crystal. By tuning the ferromagnetic resonances of the two magnets to an acoustic resonance of the crystal, we control a coherent three levels system. We show that the parity of the phonon mode governs the nature of the indirect coupling between the magnets: t…
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We study the collective dynamics of two distant magnets coherently coupled by acoustic phonons that are transmitted through an intercalated crystal. By tuning the ferromagnetic resonances of the two magnets to an acoustic resonance of the crystal, we control a coherent three levels system. We show that the parity of the phonon mode governs the nature of the indirect coupling between the magnets: the resonances with odd / even phonon modes correspond to out-of-phase / in-phase lattice displacements at the magnets, leading to bright / dark states in response to uniform microwave magnetic fields, respectively. The sample is a tri-layer garnet consisting of two thin magnetic layers epitaxially grown on both sides of a half-millimeter thick non-magnetic single crystal. In spite of the relatively weak magneto-elastic interaction, the long lifetimes of the magnon and phonon modes in the sample are the key to unveil this long range strong coupling. This demonstrates that garnets are a great platform to study multi-partite hybridization process between magnon and phonons at microwave frequencies.
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Submitted 3 April, 2022; v1 submitted 30 August, 2021;
originally announced August 2021.
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Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases
Authors:
Luis M. Vicente-Arche,
Julien Bréhin,
Sara Varotto,
Maxen Cosset-Cheneau,
Srijani Mallik,
Raphaël Salazar,
Paul Noël,
Diogo Castro Vaz,
Felix Trier,
Suvam Bhattacharya,
Anke Sander,
Patrick Le Fèvre,
François Bertran,
Guilhem Saiz,
Gerbold Ménard,
Nicolas Bergeal,
Agnès Barthélémy,
Hai Li,
Chia-Ching Lin,
Dmitri E. Nikonov,
Ian A. Young,
Julien Rault,
Laurent Vila,
Jean-Philippe Attané,
Manuel Bibes
Abstract:
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an…
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Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.
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Submitted 17 August, 2021;
originally announced August 2021.
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Voltage-Controlled Reconfigurable Magnonic Crystal at the Submicron Scale
Authors:
Hugo Merbouche,
Isabella Boventer,
Victor Haspot,
Stephan Fusil,
Vincent Garcia,
Diane Gouere,
Cecile Carretero,
Aymeric Vecchiola,
Romain Lebrun,
Paolo Bortolotti,
Laurent Vila,
Manuel Bibes,
Agnes Barthelemy,
Abdelmadjid Anane
Abstract:
Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventual…
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Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic $\mathrm{BiFeO_3}$ with a periodicity of $500\,\mathrm{nm}$ yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic $\mathrm{La_{2/3}Sr_{1/3}MnO_3}$ magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with $>20 \,\mathrm{dB}$ rejection.
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Submitted 16 May, 2021;
originally announced May 2021.
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Oxide spin-orbitronics: spin-charge interconversion and topological spin textures
Authors:
Felix Trier,
Paul Noël,
Joo-Von Kim,
Jean-Philippe Attané,
Laurent Vila,
Manuel Bibes
Abstract:
Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and…
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Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and reciprocal-space topology that may be harnessed in spintronics. In this article, we review the recent advances in the new field of oxide spin-orbitronics with a special focus on spin-charge interconversion from the direct and inverse spin Hall and Edelstein effects, and on the generation and observation of topological spin textures such as skyrmions. We highlight the control of spin-orbit-driven effects by ferroelectricity and give perspectives for the field.
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Submitted 30 March, 2021;
originally announced March 2021.
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Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
Authors:
Sara Varotto,
Luca Nessi,
Stefano Cecchi,
Jagoda Sławińska,
Paul Noël,
Simone Petrò,
Federico Fagiani,
Alessandro Novati,
Matteo Cantoni,
Daniela Petti,
Edoardo Albisetti,
Marcio Costa,
Raffaella Calarco,
Marco Buongiorno Nardelli,
Manuel Bibes,
Silvia Picozzi,
Jean-Philippe Attané,
Laurent Vila,
Riccardo Bertacco,
Christian Rinaldi
Abstract:
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit…
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Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material.
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Submitted 13 March, 2021;
originally announced March 2021.
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Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion
Authors:
Luis M. Vicente-Arche,
Srijani Mallik,
Maxen Cosset-Cheneau,
Paul Noël,
Diogo Vaz,
Felix Trier,
Tanay A. Gosavi,
Chia-Ching Lin,
Dmitri E. Nikonov,
Ian A. Young,
Anke Sander,
Agnès Barthélémy,
Jean-Philippe Attané,
Laurent Vila,
Manuel Bibes
Abstract:
SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o…
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SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.
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Submitted 5 February, 2021;
originally announced February 2021.
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Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
Authors:
Sambit Ghosh,
Taro Komori,
Ali Hallal,
Jose Peña Garcia,
Toshiki Gushi,
Taku Hirose,
Haruka Mitarai,
Hanako Okuno,
Jan Vogel,
Mairbek Chshiev,
Jean-Philippe Attané,
Laurent Vila,
Takashi Suemasu,
Stefania Pizzini
Abstract:
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride…
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Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.
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Submitted 11 March, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
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Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
Authors:
T. H. Dang,
J. Hawecker,
E. Rongione,
G. Baez Flores,
D. Q. To,
J. C. Rojas-Sanchez,
H. Nong,
J. Mangeney,
J. Tignon,
F. Godel,
S. Collin,
P. Seneor,
M. Bibes,
A. Fert,
M. Anane,
J. -M. George,
L. Vila,
M. Cosset-Cheneau,
D. Dolfi,
R. Lebrun,
P. Bortolotti,
K. Belashchenko,
S. Dhillon,
H. Jaffrès
Abstract:
Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv…
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Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion.
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Submitted 12 December, 2020;
originally announced December 2020.
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Evidence of interfacial asymmetric spin scattering at ferromagnet-Pt interfaces
Authors:
Van Tuong Pham,
Maxen Cosset-Cheneau,
Ariel Brenac,
Olivier Boulle,
Alain Marty,
Jean-Philippe Attané,
Laurent Vila
Abstract:
We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when assuming transparent interfaces and a bulk origin of the spin injection/detection by the FM elements. By carefully measuring the interface resistance, we show tha…
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We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when assuming transparent interfaces and a bulk origin of the spin injection/detection by the FM elements. By carefully measuring the interface resistance, we show that it is quite large and cannot be neglected. We then evidence that the spin injection/detection at the FM/Pt interfaces are dominated by the spin polarization of the interfaces. We show that interfacial asymmetric spin scattering becomes the driving mechanism of the spin injection in our samples.
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Submitted 9 April, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Enhancement of YIG$|$Pt spin conductance by local Joule annealing
Authors:
Ryuhei Kohno,
Nicolas Thiery,
Kyongmo An,
Paul Noël,
Laurent Vila,
Vladimir V. Naletov,
Nathan Beaulieu,
Jamal Ben Youssef,
Grégoire de Loubens,
Olivier Klein
Abstract:
We report that Joule heating can be used to enhance the interfacial spin conductivity between a metal and an oxide. We observe that local annealing of the interface at about 550\,K by injecting large current densities ($>10^{12}\text{A/m}^{2}$) into a pristine 7\,nm thick Pt nanostrip evaporated on top of yttrium iron garnet (YIG), can improve the spin transmission up to a factor 3: a result of pa…
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We report that Joule heating can be used to enhance the interfacial spin conductivity between a metal and an oxide. We observe that local annealing of the interface at about 550\,K by injecting large current densities ($>10^{12}\text{A/m}^{2}$) into a pristine 7\,nm thick Pt nanostrip evaporated on top of yttrium iron garnet (YIG), can improve the spin transmission up to a factor 3: a result of particular interest for interfacing ultra thin garnet films where strong chemical etching of the surface has to be avoided. The effect is confirmed by different methods: spin Hall magnetoresistance, spin pumping and non-local spin transport. We use it to study the influence of the YIG$|$Pt coupling on the non-linear spin transport properties. We find that the cross-over current from a linear to a non-linear spin transport regime is independent of this coupling, suggesting that the behavior of pure spin currents circulating in the dielectric are mostly governed by the physical properties of the bare YIG film beside the Pt nanostrip.
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Submitted 6 September, 2020;
originally announced September 2020.
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Short-range Thermal Magnon Diffusion in Magnetic Garnet
Authors:
Kyongmo An,
Ryuhei Kohno,
Nicolas Thiery,
Derek Reitz,
Laurent Vila,
Vladimir V. Naletov,
Nathan Beaulieu,
Jamal Ben Youssef,
Grégoire de Loubens,
Yaroslav Tserkovnyak,
Olivier Klein
Abstract:
Using the spin Seebeck effect (SSE), we study the propagation distance of thermal spin currents inside a magnetic insulator thin film in the short-range regime. We disambiguate spin currents driven by temperature and chemical potential gradients by comparing the SSE signal before and after adding a thermalization capping layer on the same device. We report that the measured spin decay behavior nea…
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Using the spin Seebeck effect (SSE), we study the propagation distance of thermal spin currents inside a magnetic insulator thin film in the short-range regime. We disambiguate spin currents driven by temperature and chemical potential gradients by comparing the SSE signal before and after adding a thermalization capping layer on the same device. We report that the measured spin decay behavior near the heat source is well accounted for by a diffusion model where the magnon diffusion length is in submicron range, \textit{i.e.} two orders of magnitude smaller than previous estimates inferred from the long-range behavior. Our results highlight the caveat in applying a diffusive theory to describe thermal magnon transport, where a single decay length may not capture the behavior on all length scales.
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Submitted 25 August, 2020;
originally announced August 2020.
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Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves
Authors:
Maxen Cosset-Chéneau,
Laurent Vila,
Gilles Zahnd,
Daria Gusakova,
Van Tuong Pham,
Cécile Grèzes,
Xavier Waintal,
Alain Marty,
Henri Jaffrès,
Jean-Philippe Attané
Abstract:
The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamenta…
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The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamental parameter of the spin-dependent transport. We show that the obtained valuescannot be understood within a model considering only the Larmor, transverse decoherence and spindiffusion lengths, and rather suggest that the spin-mixing conductance is actually limited by theSharvin conductance.
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Submitted 28 July, 2020;
originally announced July 2020.
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A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$
Authors:
Julien Bréhin,
Felix Trier,
Luis M. Vicente-Arche,
Pierre Hemme,
Paul Noël,
Maxen Cosset-Chéneau,
Jean-Philippe Attané,
Laurent Vila,
Anke Sander,
Yann Gallais,
Alain Sacuto,
Brahim Dkhil,
Vincent Garcia,
Stéphane Fusil,
Agnès Barthélémy,
Maximilien Cazayous,
Manuel Bibes
Abstract:
Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern…
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Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.
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Submitted 7 July, 2020;
originally announced July 2020.
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Independence of the inverse spin Hall effect with the magnetic phase in thin NiCu films
Authors:
Sara Varotto,
Maxen Cosset-Cheneau,
Cécile Grezes,
Yu Fu,
Patrick Warin,
Ariel Brenac,
Jean-François Jacquot,
Serge Gambarelli,
Christian Rinaldi,
Vincent Baltz,
Jean-Philippe Attané,
Laurent Vila,
Paul Noël
Abstract:
Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it…
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Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results points towards a Heisenberg localized model of the transition, and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase.
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Submitted 16 May, 2020;
originally announced May 2020.
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Sub-micrometer near-field focusing of spin waves in ultrathin YIG films
Authors:
B. Divinskiy,
N. Thiery,
L. Vila,
O. Klein,
N. Beaulieu,
J. Ben Youssef,
S. O. Demokritov,
V. E. Demidov
Abstract:
We experimentally demonstrate tight focusing of a spin wave beam excited in extended nanometer-thick films of Yttrium Iron Garnet by a simple microscopic antenna functioning as a single-slit near-field lens. We show that the focal distance and the minimum transverse width of the focal spot can be controlled in a broad range by varying the frequency/wavelength of spin waves and the antenna geometry…
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We experimentally demonstrate tight focusing of a spin wave beam excited in extended nanometer-thick films of Yttrium Iron Garnet by a simple microscopic antenna functioning as a single-slit near-field lens. We show that the focal distance and the minimum transverse width of the focal spot can be controlled in a broad range by varying the frequency/wavelength of spin waves and the antenna geometry. The experimental data are in good agreement with the results of numerical simulations. Our findings provide a simple solution for implementation of magnonic nano-devices requiring local concentration of the spin-wave energy.
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Submitted 11 February, 2020;
originally announced February 2020.
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Self-induced inverse spin Hall effect in ferromagnets: demonstration through non-monotonous temperature-dependence in permalloy
Authors:
O. Gladii,
L. Frangou,
A. Hallal,
R. L. Seeger,
P. Noel,
G. Forestier,
S. Auffret,
M. Rubio-Roy,
P. Warin,
L. Vila,
S. Wimmer,
H. Ebert,
S. Gambarelli,
M. Chshiev,
V. Baltz
Abstract:
We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew…
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We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pumping experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew scattering, side-jump, and intrinsic contributions to the T-dependent spin Hall conductivity. Experimental data were similar whatever the material in contact with permalloy (oxides or metals), and revealed an increase of produced current with t, demonstrating a bulk origin of the effect.
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Submitted 3 September, 2019;
originally announced September 2019.
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Coherent long-range transfer of angular momentum between magnon Kittel modes by phonons
Authors:
Kyongmo An,
Artem N. Litvinenko,
Ryuhei Kohno,
Aufa A. Fuad,
Vladimir V. Naletov,
Laurent Vila,
Ursula Ebels,
Grégoire de Loubens,
Hervé Hurdequint,
Nathan Beaulieu,
Jamal Ben Youssef,
Nicolas Vukadinovic,
Gerrit E. W. Bauer,
Andrei N. Slavin,
Vasil S. Tiberkevich,
Olivier Klein
Abstract:
We report ferromagnetic resonance in the normal configuration of an electrically insulating magnetic bilayer consisting of two yttrium iron garnet (YIG) films epitaxially grown on both sides of a 0.5-mm-thick nonmagnetic gadolinium gallium garnet (GGG) slab. An interference pattern is observed and it is explained as the strong coupling of the magnetization dynamics of the two YIG layers either in…
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We report ferromagnetic resonance in the normal configuration of an electrically insulating magnetic bilayer consisting of two yttrium iron garnet (YIG) films epitaxially grown on both sides of a 0.5-mm-thick nonmagnetic gadolinium gallium garnet (GGG) slab. An interference pattern is observed and it is explained as the strong coupling of the magnetization dynamics of the two YIG layers either in phase or out of phase by the standing transverse sound waves, which are excited through a magnetoelastic interaction. This coherent mediation of angular momentum by circularly polarized phonons through a nonmagnetic material over macroscopic distances can be useful for future information technologies.
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Submitted 12 March, 2020; v1 submitted 29 May, 2019;
originally announced May 2019.
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Negligible thermal contributions to the spin pumping signal in ferromagnetic metal-Platinum bilayers
Authors:
Paul Noël,
Maxen Cosset-Cheneau,
Victor Haspot,
Vincent Maurel,
Christian Lombard,
Manuel Bibes,
Agnès Barthelemy,
Laurent Vila,
Jean-Philippe Attané
Abstract:
Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. He…
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Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pumping signals, by combining bolometry and spin pumping by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on Pt\Permalloy and La0.7Sr0.3MnO3\Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance
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Submitted 13 April, 2020; v1 submitted 2 May, 2019;
originally announced May 2019.
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Spin dependent transport characterization in metallic lateral spin valves using 1D and 3D modeling
Authors:
P. Laczkowski,
M. Cosset-Cheneau,
W. Savero-Torres,
V. T. Pham,
H. Jaffrès,
N. Reyren,
J. -C. Rojas-Sànchez,
A. Marty,
L. Vila,
J. -M. George,
J. -P. Attané
Abstract:
We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au base…
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We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool for reliable spin transport characterization in all metallic spin valves and gives an insight into the spin/charge current and spin accumulations 3D distributions in these devices. We provide the necessary ingredients to develop the 3D finite element modeling of diffusive spin transport.
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Submitted 18 March, 2019; v1 submitted 6 March, 2019;
originally announced March 2019.
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Effective field analysis using the full angular spin-orbit torque magnetometry dependence
Authors:
Tomek Schulz,
Kyujoon Lee,
Benjamin Krüger,
Roberto Lo Conte,
Gurucharan V. Karnad,
Karin Garcia,
Laurent Vila,
Berthold Ocker,
Dafiné Ravelosona,
Mathias Kläui
Abstract:
Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored spin-orbit torques are being developed. A method, which allows one to detect the acting torques in a given system as a function of the magnetization direction is…
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Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored spin-orbit torques are being developed. A method, which allows one to detect the acting torques in a given system as a function of the magnetization direction is the torque-magnetometry method based on a higher harmonics analysis of the anomalous Hall-effect. Here we show that the effective fields acting on magnetic domain walls that govern the efficiency of their dynamics require a sophisticated analysis taking into account the full angular dependence of the torques. Using a 1-D model we compared the spin orbit torque efficiencies by depinning measurements and spin torque magnetometry. We show that the effective fields can be accurately determined and we find good agreement. Thus our method allows us now to rapidly screen materials and predict the resulting quasi-particle dynamics.
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Submitted 22 February, 2019; v1 submitted 12 February, 2019;
originally announced February 2019.
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Low spin-polarization in the heavy metal\ferromagnet structures detected through the domain wall motion by synchronized magnetic field and current
Authors:
Xueying Zhang,
Nicolas Vernier,
Laurent Vila,
Shaohua Yan1,
Zhiqiang Cao,
Anni Cao,
Zilu Wang,
Wenlong Cai,
Yang Liu,
Huaiwen Yang,
Dafiné Ravelosona,
Weisheng Zhao
Abstract:
CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a spin-polarized current, and this limits the perspectives of racetrack memory driven by the current-in-plane mechanism. To investigate this phenomenon, we performed e…
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CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a spin-polarized current, and this limits the perspectives of racetrack memory driven by the current-in-plane mechanism. To investigate this phenomenon, we performed experiments of DW velocity measurement by applying a magnetic field and a current simultaneously. Working in the precessional regime, we have been able to see a very important effect of the spin-polarized current, which allows evaluating the polarization rate of the charge carriers. An unexpected quite low spin polarization rate down to 0.26 have been obtained, which can explain the low efficiency of DW motion induced by the spin-polarized current. Possible reasons for this low rate are analyzed, such as the spin relaxation in the Ta layer.
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Submitted 26 January, 2019;
originally announced January 2019.
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Mn4N ferrimagnetic thin films for sustainable spintronics
Authors:
T. Gushi,
M. Jovičević Klug,
J. Peña Garcia,
H. Okuno,
J. Vogel,
J. P. Attané,
T. Suemasu,
S. Pizzini,
L. Vila
Abstract:
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxial…
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Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.
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Submitted 4 March, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3
Authors:
Toshiki Gushi,
Laurent Vila,
Olivier Fruchart,
Alain Marty,
Stefania Pizzini,
Jan Vogel,
Fumiya Takata,
Akihito Anzai,
Kaoru Toko,
Takashi Suemasu,
Jean-Philippe Attané
Abstract:
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millime…
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The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare
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Submitted 31 October, 2018;
originally announced October 2018.
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Spin diffusion length and polarization of ferromagnetic metals measured by spin-absorption technique in lateral spin valves
Authors:
G. Zahnd,
Laurent Vila,
V. Pham,
M Cosset-Cheneau,
W Lim,
A Brenac,
P Laczkowski,
A Marty,
J Attané
Abstract:
We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties of ferromagnetic elements. The analytical model used to describe the measurement takes into account the polarization of the absorber. The analysis of the measure…
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We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties of ferromagnetic elements. The analytical model used to describe the measurement takes into account the polarization of the absorber. The analysis of the measurements allows thus determining the polarization and the spin diffusion length of a studied material independently, contrarily to most experiments based on lateral spin valves where those values are entangled. We report the spin transport parameters of some of the most important materials used in spinorbitronics (Co60Fe40, Ni81Fe19, Co, Pt, and Ta), at room and low (10 K) temperatures.
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Submitted 31 October, 2018;
originally announced October 2018.
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Cross-shaped nanostructures for the study of spin to charge interconversions using spin-orbit coupling in non-magnetic materials
Authors:
V. T. Pham,
L. Vila,
G. Zahnd,
P. Noël,
A. Marty,
J. P. Attané
Abstract:
Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can be made electrically, using three different cross-shaped nanostructures. We apply these measurement configurations to the case of the spin Hall effect in Pt, usi…
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Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can be made electrically, using three different cross-shaped nanostructures. We apply these measurement configurations to the case of the spin Hall effect in Pt, using CoFe electrodes to detect and inject spins. Both the direct and inverse spin Hall effect can be detected, with a spin Hall signal up to two order of magnitude higher than that of nonlocal measurements in metallic lateral spin valves, and with a much simpler fabrication protocol. We compare the respective signal amplitude of the three proposed geometries. Finally, comparison of the observed spin signals with finite element method calculations allows extracting the spin Hall angle and the spin diffusion length of Pt.
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Submitted 17 September, 2018;
originally announced September 2018.
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Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy
Authors:
N. Perrissin,
S. Lequeux,
N. Strelkov,
L. Vila,
L. Buda-Prejbeanu,
S. Auffret,
R. C. Sousa,
I. L. Prejbeanu,
B. Dieny
Abstract:
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o…
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A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low damping material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter.
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Submitted 7 March, 2018;
originally announced March 2018.
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Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures
Authors:
Nicolas Thiery,
Vladimir V. Naletov,
Laurent Vila,
Alain Marty,
Ariel Brenac,
Jean-François Jacquot,
Grégoire de Loubens,
Michel Viret,
Abdelmadjid Anane,
Vincent Cros,
Jamal Ben Youssef,
Vladislav E. Demidov,
Sergej O. Demokritov,
Olivier Klein
Abstract:
We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavio…
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We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\approx 2$ eV, indicating that epitaxial YIG ultra-thin films behave as large gap semiconductor, and not as electrical insulator. The resistivity drops to about $5\times 10^3$~$Ω\cdot \text{cm}$ at $T=400$ K. We also infer the Hall mobility, which is found to be positive ($p$-type) at 5 cm$^2$/(V$\cdot$sec) and about independent of temperature. We discuss the consequence for non-local transport experiments performed on YIG at room temperature. These electrical properties are responsible for an offset voltage (independent of the in-plane field direction) whose amplitude, odd in current, grows exponentially with current due to Joule heating. These electrical properties also induce a sensitivity to the perpendicular component of the magnetic field through the Hall effect. In our lateral device, a thermoelectric offset voltage is produced by a temperature gradient along the wire direction proportional to the perpendicular component of the magnetic field (Righi-Leduc effects).
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Submitted 21 September, 2017;
originally announced September 2017.
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Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities
Authors:
P. Laczkowski,
Y. Fu,
H. Yang,
J. -C. Rojas-Sánchez,
P. Noel,
V. T. Pham,
G. Zahnd,
C. Deranlot,
S. Collin,
C. Bouard,
P. Warin,
V. Maurel,
M. Chshiev,
A. Marty,
J. -P. Attané,
A. Fert,
H. Jaffrès,
L. Vila,
J. -M. George
Abstract:
We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pumping technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for…
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We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pumping technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\,μΩ.cm$), are promising for spintronic devices exploiting the SHE.
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Submitted 30 August, 2017;
originally announced August 2017.
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Direct observation of domain wall surface tension by deflating or inflating a magnetic bubble
Authors:
Xueying Zhang,
Nicolas Vernier,
Weisheng Zhao,
Haiming Yu,
Laurent Vila,
Dafiné Ravelosona
Abstract:
The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena have not been well understood. Moreover, a reliable method to quantify the DW surface energy is still missing. Here, we report a series of experiments in which the DW surface energy becomes a dominant parameter. We observ…
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The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena have not been well understood. Moreover, a reliable method to quantify the DW surface energy is still missing. Here, we report a series of experiments in which the DW surface energy becomes a dominant parameter. We observed that a semicircular magnetic domain bubble could spontaneously collapse under the Laplace pressure induced by DW surface energy. We further demonstrated that the surface energy could lead to a geometrically induced pinning when the DW propagates in a Hall cross or from a nanowire into a nucleation pad. Based on these observations, we developed two methods to quantify the DW surface energy, which could be very helpful to estimate intrinsic parameters such as Dzyaloshinskii-Moriya Interactions (DMI) or exchange stiffness in magnetic ultra-thin films.
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Submitted 22 August, 2017;
originally announced August 2017.
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Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states
Authors:
P. Noël,
C. Thomas,
Y. Fu,
L. Vila,
B. Haas,
P. H. Jouneau,
S. Gambarelli,
T. Meunier,
P. Ballet,
J. P. Attané
Abstract:
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the…
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We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.
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Submitted 17 August, 2017;
originally announced August 2017.
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Spin conductance of YIG thin films driven from thermal to subthermal magnons regime by large spin-orbit torque
Authors:
Nicolas Thiery,
Antoine Draveny,
Vladimir V. Naletov,
Laurent Vila,
Jean-Philippe Attané,
Grégoire de Loubens,
Michel Viret,
Nathan Beaulieu,
Jamal Ben Youssef,
Vladislav E. Demidov,
Sergej O. Demokritov,
Andrei N. Slavin,
Vasyl S. Tiberkevich,
Abdelmadjid Anane,
Paolo Bortolotti,
Vincent Cros,
Olivier Klein
Abstract:
We report a study on spin conductance in ultra-thin films of Yttrium Iron Garnet (YIG), where spin transport is provided by propagating spin waves, that are generated and detected by direct and inverse spin Hall effects in two Pt wires deposited on top. While at low current the spin conductance is dominated by transport of thermal magnons, at high current, the spin conductance is dominated by low-…
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We report a study on spin conductance in ultra-thin films of Yttrium Iron Garnet (YIG), where spin transport is provided by propagating spin waves, that are generated and detected by direct and inverse spin Hall effects in two Pt wires deposited on top. While at low current the spin conductance is dominated by transport of thermal magnons, at high current, the spin conductance is dominated by low-damping non-equilibrium magnons thermalized near the spectral bottom by magnon-magnon interaction, with consequent a sensitivity to the applied magnetic field and a longer decay length. This picture is supported by microfocus Brillouin Light Scattering spectroscopy.
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Submitted 17 September, 2017; v1 submitted 17 February, 2017;
originally announced February 2017.
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Spin transfer driven resonant expulsion of a magnetic vortex core for efficient rf detector
Authors:
Samh Menshawy,
Alex Jenkins,
Karla J Merazzo,
Laurent Vila,
Ricardo Ferreira,
Marie-Claire Cyrille,
Ursula Ebels,
Paolo Bortolotti,
Julien Kermorvant,
Vincent Cros
Abstract:
Spin transfer magnetization dynamics have led to considerable advances in Spintronics, including opportunities for new nanoscale radiofrequency devices. Among the new functionalities is the radiofrequency(rf) detection using the spin diode rectification effect in spin torque nano-oscillators (STNOs). In this study, we focus on a new phenomenon, the resonant expulsion of a magnetic vortex in STNOs.…
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Spin transfer magnetization dynamics have led to considerable advances in Spintronics, including opportunities for new nanoscale radiofrequency devices. Among the new functionalities is the radiofrequency(rf) detection using the spin diode rectification effect in spin torque nano-oscillators (STNOs). In this study, we focus on a new phenomenon, the resonant expulsion of a magnetic vortex in STNOs. This effect is observed when the excitation vortex radius, due to spin torques associated to rf currents, becomes larger than the actual radius of the STNO. This vortex expulsion is leading to a sharp variation of the voltage at the resonant frequency. Here we show that the detected frequency can be tuned by different parameters; furthermore, a simultaneous detection of different rf signals can be achieved by real time measurements with several STNOs having different diameters. This result constitutes a first proof-of-principle towards the development of a new kind of nanoscale rf threshold detector.
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Submitted 27 October, 2016;
originally announced October 2016.
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Enhancing the injection locking range of spin torque oscillators through mutual coupling
Authors:
M. Romera,
P. Talatchian,
R. Lebrun,
K. J. Merazzo,
P. Bortolotti,
L. Vila,
J. D. Costa,
R. Ferreira,
P. P. Freitas,
M. -C. Cyrille,
U. Ebels,
V. Cros,
J. Grollier
Abstract:
We investigate how the ability of the vortex oscillation mode of a spin-torque nano-oscillator to lock to an external microwave signal is modified when it is coupled to another oscillator. We show experimentally that mutual electrical coupling can lead to locking range enhancements of a factor 1.64. Furthermore, we analyze the evolution of the locking range as a function of the coupling strength t…
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We investigate how the ability of the vortex oscillation mode of a spin-torque nano-oscillator to lock to an external microwave signal is modified when it is coupled to another oscillator. We show experimentally that mutual electrical coupling can lead to locking range enhancements of a factor 1.64. Furthermore, we analyze the evolution of the locking range as a function of the coupling strength through experiments and numerical simulations. By uncovering the mechanisms at stake in the locking range enhancement, our results will be useful for designing spin-torque nano-oscillators arrays with high sensitivities to external microwave stimuli.
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Submitted 6 May, 2019; v1 submitted 19 October, 2016;
originally announced October 2016.
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Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling
Authors:
A. Chavent,
C. Ducruet,
C. Portemont,
L. Vila,
J. Alvarez-Hérault,
R. Sousa,
I. L. Prejbeanu,
B. Dieny
Abstract:
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias v…
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Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing.
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Submitted 27 September, 2016;
originally announced September 2016.
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Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
Authors:
E. Lesne,
Y. Fu,
S. Oyarzun,
J. C. Rojas-Sanchez,
D. C. Vaz,
H. Naganuma,
G. Sicoli,
J. -P. Attane,
M. Jamet,
E. Jacquet,
J. -M. George,
A. Barthelemy,
H. Jaffres,
A. Fert,
M. Bibes,
L. Vila
Abstract:
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices,…
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The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.
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Submitted 21 September, 2016;
originally announced September 2016.
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Enhanced spin pumping efficiency in antiferromagnetic IrMn thin films around the magnetic phase transition
Authors:
Lamprini Frangou,
Simon Oyarzun,
Stephane Auffret,
Laurent Vila,
Serge Gambarelli,
Vincent Baltz
Abstract:
We report measurement of a spin pumping effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced damping was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pump…
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We report measurement of a spin pumping effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced damping was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pumping peak, the thickness dependence of the IrMn critical temperature could be determined and the characteristic length for the spin-spin interactions was deduced.
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Submitted 7 January, 2016; v1 submitted 11 September, 2015;
originally announced September 2015.
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Spin-pumping into surface states of topological insulator α-Sn, spin to charge conversion at room temperature
Authors:
J. -C. Rojas-Sánchez,
S. Oyarzun,
Y. Fu,
A. Marty,
C. Vergnaud,
S. Gambarelli,
L. Vila,
M. Jamet,
Y. Ohtsubo,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
N. Reyren,
J. -M. George,
A. Fert
Abstract:
We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant…
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We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.
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Submitted 9 September, 2015;
originally announced September 2015.
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Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions
Authors:
P. Laczkowski,
H. Jaffrès,
W. Savero-Torres,
J. -C. Rojas-Sánchez,
Y. Fu,
N. Reyren,
C. Deranlot,
L. Notin,
C. Beigné,
J. -P. Attané,
L. Vila,
J. -M. George,
A. Marty
Abstract:
The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current p…
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The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials.
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Submitted 27 October, 2015; v1 submitted 16 July, 2015;
originally announced July 2015.
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Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin-valves
Authors:
G. Zahnd,
L. Vila,
T. V. Pham,
A. Marty,
P. Laczkowski,
W. Savero Torres,
C. Beigné,
C. Vergnaud,
M. Jamet,
J. -P. Attané
Abstract:
Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin sig…
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Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization.
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Submitted 12 November, 2015; v1 submitted 3 July, 2015;
originally announced July 2015.