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Terahertz antiferromagnetic dynamics induced by ultrafast spin currents
Authors:
Sanjay René,
Artem Levchuk,
Amr Abdelsamie,
Zixin Li,
Pauline Dufour,
Arthur Chaudron,
Florian Godel,
Jean-Baptiste Moussy,
Karim Bouzehouane,
Stéphane Fusil,
Vincent Garcia,
Michel Viret,
Jean-Yves Chauleau
Abstract:
Insulating antiferromagnets are anticipated as the main protagonists of ultrafast spintronics, with their intrinsic terahertz dynamics and their abililty to transport spin information over long distances. However, direct transfer of spin angular momentum to an antiferromagnetic insulator at picosecond time scales remains to be demonstrated. Here, studying the ultrafast behaviour of ferromagnetic m…
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Insulating antiferromagnets are anticipated as the main protagonists of ultrafast spintronics, with their intrinsic terahertz dynamics and their abililty to transport spin information over long distances. However, direct transfer of spin angular momentum to an antiferromagnetic insulator at picosecond time scales remains to be demonstrated. Here, studying the ultrafast behaviour of ferromagnetic metal/antiferromagnetic insulator bilayers, we evidence the generation of coherent excitations in the antiferromagnet combined with a modulation of the demagnetization behavior of the ferromagnet. This confirms that magnetic information can indeed be propagated into antiferromagnetic spin waves at picosecond timescales, thereby opening an avenue towards ultrafast manipulation of magnetic information.
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Submitted 20 July, 2024;
originally announced July 2024.
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Enantiospecificity in NMR Enabled by Chirality-Induced Spin Selectivity
Authors:
T. Georgiou,
J. L. Palma,
V. Mujica,
S. Varela,
M. Galante,
V. Santamarıa Garcıa,
L. Mboning,
R. N. Schwartz,
G. Cuniberti,
L. -S. Bouchard
Abstract:
Spin polarization in chiral molecules is a magnetic molecular response associated with electron transport and enantioselective bond polarization that occurs even in the absence of an external magnetic field. An unexpected finding by Santos and co-workers reported enantiospecific NMR responses in solid-state cross-polarization (CP) experiments, suggesting a possible additional contribution to the i…
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Spin polarization in chiral molecules is a magnetic molecular response associated with electron transport and enantioselective bond polarization that occurs even in the absence of an external magnetic field. An unexpected finding by Santos and co-workers reported enantiospecific NMR responses in solid-state cross-polarization (CP) experiments, suggesting a possible additional contribution to the indirect nuclear spin-spin coupling in chiral molecules induced by bond polarization in the presence of spin-orbit coupling. Herein we provide a theoretical treatment for this phenomenon, presenting an effective spin-Hamiltonian for helical molecules like DNA and density functional theory (DFT) results on amino acids that confirm the dependence of J-couplings on the choice of enantiomer. The connection between nuclear spin dynamics and chirality could offer insights for molecular sensing and quantum information sciences. These results establish NMR as a potential tool for chiral discrimination without external agents.
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Submitted 2 July, 2024; v1 submitted 30 June, 2024;
originally announced July 2024.
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Electrical control of magnetism by electric field and current-induced torques
Authors:
Albert Fert,
Ramamoorthy Ramesh,
Vincent Garcia,
Fèlix Casanova,
Manuel Bibes
Abstract:
While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferroma…
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While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferromagnet. This discovery drove the development of spin-transfer-torque magnetic random-access memories (STT-MRAMs). More recent research unveiled spin-orbit-torques (SOTs) and will lead to a new generation of devices including SOT-MRAMs. Parallel to these advances, multiferroics and their magnetoelectric coupling experienced a renaissance, leading to novel device concepts for information and communication technology such as the MESO transistor. The story of the electrical control of magnetization is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO, microwave emitters, spin-diodes, skyrmion-based devices, components for neuromorphics, etc). This pas de deux led to major breakthroughs over the last decades (pure spin currents, magnetic skyrmions, spin-charge interconversion, etc). As a result, this field has propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, we cover recent advances in the control of magnetism by electric fields and by current-induced torques. We first review fundamental concepts in these two directions, then discuss their combination, and finally present various families of devices harnessing the electrical control of magnetic properties for various application fields. We conclude by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.
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Submitted 20 November, 2023;
originally announced November 2023.
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Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Authors:
Diogo C. Vaz,
Chia-Ching Lin,
John J. Plombon,
Won Young Choi,
Inge Groen,
Isabel C. Arango,
Andrey Chuvilin,
Luis E. Hueso,
Dmitri E. Nikonov,
Hai Li,
Punyashloka Debashis,
Scott B. Clendenning,
Tanay A. Gosavi,
Yen-Lin Huang,
Bhagwati Prasad,
Ramamoorthy Ramesh,
Aymeric Vecchiola,
Manuel Bibes,
Karim Bouzehouane,
Stephane Fusil,
Vincent Garcia,
Ian A. Young,
Fèlix Casanova
Abstract:
With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel…
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With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies.
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Submitted 23 February, 2023;
originally announced February 2023.
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Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures
Authors:
Raphaël Salazar,
Sara Varotto,
Céline Vergnaud,
Vincent Garcia,
Stéphane Fusil,
Julien Chaste,
Thomas Maroutian,
Alain Marty,
Frédéric Bonell,
Debora Pierucci,
Abdelkarim Ouerghi,
François Bertran,
Patrick Le Fèvre,
Matthieu Jamet,
Manuel Bibes,
Julien Rault
Abstract:
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst…
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Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects.
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Submitted 26 October, 2022;
originally announced October 2022.
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Imaging topological defects in a non-collinear antiferromagnet
Authors:
Aurore Finco,
Angela Haykal,
Stéphane Fusil,
Pawan Kumar,
Pauline Dufour,
Anne Forget,
Dorothée Colson,
Jean-Yves Chauleau,
Michel Viret,
Nicolas Jaouen,
Vincent Garcia,
Vincent Jacques
Abstract:
We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single ferroelectric domain, the coexistence of antiferromagnetic domains in which the antiferromagnetic cycloid propagates along different wavevectors. We then show t…
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We report on the formation of topological defects emerging from the cycloidal antiferromagnetic order at the surface of bulk BiFeO$_3$ crystals. Combining reciprocal and real-space magnetic imaging techniques, we first observe, in a single ferroelectric domain, the coexistence of antiferromagnetic domains in which the antiferromagnetic cycloid propagates along different wavevectors. We then show that the direction of these wavevectors is not strictly locked to the preferred crystallographic axes as continuous rotations bridge different wavevectors. At the junctions between the magnetic domains, we observe topological line defects identical to those found in a broad variety of lamellar physical systems with rotational symmetries. Our work establishes the presence of these magnetic objects at room temperature in the multiferroic antiferromagnet BiFeO$_3$, offering new possibilities for their use in spintronics.
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Submitted 4 February, 2022;
originally announced February 2022.
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Voltage-Controlled Reconfigurable Magnonic Crystal at the Submicron Scale
Authors:
Hugo Merbouche,
Isabella Boventer,
Victor Haspot,
Stephan Fusil,
Vincent Garcia,
Diane Gouere,
Cecile Carretero,
Aymeric Vecchiola,
Romain Lebrun,
Paolo Bortolotti,
Laurent Vila,
Manuel Bibes,
Agnes Barthelemy,
Abdelmadjid Anane
Abstract:
Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventual…
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Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic $\mathrm{BiFeO_3}$ with a periodicity of $500\,\mathrm{nm}$ yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic $\mathrm{La_{2/3}Sr_{1/3}MnO_3}$ magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with $>20 \,\mathrm{dB}$ rejection.
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Submitted 16 May, 2021;
originally announced May 2021.
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Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation
Authors:
C. Toulouse,
J. Fischer,
S. Farokhipoor,
L. Yedra,
F. Carla,
A. Jarnac,
E. Elkaim,
P. Fertey,
J. -N. Audinot,
T. Wirtz,
B. Noheda,
V. Garcia,
S. Fusil,
I. Peral Alonso,
M. Guennou,
J. Kreisel
Abstract:
Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films wh…
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Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towards the so-called super-tetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset of amorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phase transition from the R-like to T-like BiFeO3 appears as first-order in character, with regions of phase coexistence and abrupt changes in lattice parameters.
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Submitted 15 February, 2021;
originally announced February 2021.
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Real-space imaging of non-collinear antiferromagnetic order with a single spin magnetometer
Authors:
I. Gross,
W. Akhtar,
V. Garcia,
L. J. Martínez,
S. Chouaieb,
K. Garcia,
C. Carrétéro,
A. Barthélémy,
P. Appel,
P. Maletinsky,
J. -V. Kim,
J. Y. Chauleau,
N. Jaouen,
M. Viret,
M. Bibes,
S. Fusil,
V. Jacques
Abstract:
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and t…
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While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or produce emergent spin-orbit effects, which enable efficient spin-charge interconversion. To harness these unique traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive scanning nanomagnetometer based on a single nitrogen-vacancy (NV) defect in diamond, we demonstrate the first real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film, at room temperature. We image the spin cycloid of a multiferroic BiFeO$_3$ thin film and extract a period of $\sim70$ nm, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO$_3$ to manipulate the cycloid propagation direction by an electric field. Besides highlighting the unique potential of NV magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO$_3$ can be used as a versatile platform for the design of reconfigurable nanoscale spin textures.
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Submitted 24 November, 2020;
originally announced November 2020.
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Ferroelectric tunnel junctions
Authors:
Vincent Garcia
Abstract:
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic electrodes. In these devices, polarization reversal induces large modifications of the tunnel resistance, leading to a non-destructive readout of the information. Aft…
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My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic electrodes. In these devices, polarization reversal induces large modifications of the tunnel resistance, leading to a non-destructive readout of the information. After a demonstration of the concept with scanning probe microscopy techniques, I have been exploring the properties of ferroelectric tunnel junctions with various ferroelectric materials (BaTiO3, BiFeO3, and PVDF). I showed that these devices possess attractive properties for applications as non-volatile binary memories. In addition, exploring the fact that polarization usually reverses by the nucleation and propagation of domains, I demonstrated a memristive behavior in the junctions associated to non-uniform configurations of ferroelectric domains. Such ferroelectric memristors can be used as artificial synapses in neuromorphic architectures. Coupled to magnetic electrodes, the resulting multiferroic tunnel junctions enable a non-volatile control of magnetism at the ferroelectric/electrode interface and of the spin-polarized current associated. Besides this main activity on tunnel devices, I explored the influence of ferroelectricity on magnetic orders and on the properties of functional oxides.
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Submitted 16 November, 2020;
originally announced November 2020.
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A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$
Authors:
Julien Bréhin,
Felix Trier,
Luis M. Vicente-Arche,
Pierre Hemme,
Paul Noël,
Maxen Cosset-Chéneau,
Jean-Philippe Attané,
Laurent Vila,
Anke Sander,
Yann Gallais,
Alain Sacuto,
Brahim Dkhil,
Vincent Garcia,
Stéphane Fusil,
Agnès Barthélémy,
Maximilien Cazayous,
Manuel Bibes
Abstract:
Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern…
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Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.
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Submitted 7 July, 2020;
originally announced July 2020.
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Electron-polaron dichotomy of charge carriers in perovskite oxides
Authors:
Marius-Adrian Husanu,
Lorenzo Vistoli,
Carla Verdi,
Anke Sander,
Vincent Garcia,
Julien Rault,
Federico Bisti,
Leonid L. Lev,
Thorsten Schmitt,
Feliciano Giustino,
Andrey S. Mishchenko,
Manuel Bibes,
Vladimir N. Strocov
Abstract:
Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,…
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Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.
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Submitted 15 April, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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A journey into the tuneable antiferromagnetic spin textures of BiFeO3
Authors:
A. Haykal,
J. Fischer,
W. Akhtar,
J. -Y. Chauleau,
D. Sando,
A. Finco,
C. Carretero,
N. Jaouen,
M. Bibes,
M. Viret,
S. Fusil,
V. Jacques,
V. Garcia
Abstract:
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and ma…
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Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and manipulated by electric fields through room temperature magnetoelectric coupling. Using piezoresponse force microscopy and scanning NV magnetometry in self-organized ferroelectric patterns of BiFeO3, we reveal how strain stabilizes different types of non-collinear antiferromagnetic states (bulk-like and exotic spin cycloids) as well as collinear antiferromagnetic textures. Beyond these local-scale observations, resonant elastic X-ray scattering confirms the existence of both types of spin cycloids. Finally, we show that electric-field control of the ferroelectric landscape induces transitions either between collinear and non-collinear states or between different cycloids, offering perspectives for the design of reconfigurable antiferromagnetic spin textures on demand.
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Submitted 28 December, 2019;
originally announced December 2019.
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Giant topological Hall effect in correlated oxide thin films
Authors:
Lorenzo Vistoli,
Wenbo Wang,
Anke Sander,
Qiuxiang Zhu,
Blai Casals,
Rafael Cichelero,
Agnès Barthélémy,
Stéphane Fusil,
Gervasi Herranz,
Sergio Valencia,
Radu Abrudan,
Eugen Weschke,
Kazuki Nakazawa,
Hiroshi Kohno,
Jacobo Santamaria,
Weida Wu,
Vincent Garcia,
Manuel Bibes
Abstract:
Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in t…
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Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low doping, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields.
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Submitted 19 September, 2019;
originally announced September 2019.
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Modulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation
Authors:
S. Cervera,
M Trassinelli,
M Marangolo,
C Carrétéro,
V Garcia,
S Hidki,
E Jacquet,
E Lamour,
A Lévy,
S Macé,
C Prigent,
J Rozet,
S Steydli,
D Vernhet
Abstract:
Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternative to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials, optimal refrigeration is restricted to the narrow temperature window of the phase transition (Tc). In this work, we present the possibility of varying this transit…
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Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternative to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials, optimal refrigeration is restricted to the narrow temperature window of the phase transition (Tc). In this work, we present the possibility of varying this transition temperature into a same giant magnetocaloric material by ion irradiation. We demonstrate that the transition temperature of iron rhodium thin films can be tuned by the bombardment of ions of Ne 5+ with varying fluences up to 10 14 ions cm --2 , leading to optimal refrigeration over a large 270--380 K temperature window. The Tc modification is found to be due to the ion-induced disorder and to the density of new point-like defects. The variation of the phase transition temperature with the number of incident ions opens new perspectives in the conception of devices using giant magnetocaloric materials.
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Submitted 23 October, 2017;
originally announced October 2017.
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Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator
Authors:
M. Marinova,
J. E. Rault,
A. Gloter,
S. Nemsak,
G. K. Palsson,
J. -P. Rueff,
C. S. Fadley,
C. Carretero,
H. Yamada,
K. March,
V. Garcia,
S. Fusil,
A. Barthelemy,
O. Stephan,
C. Colliex,
M. Bibes
Abstract:
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly kn…
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The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
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Submitted 30 August, 2017;
originally announced August 2017.
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Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3
Authors:
D. Sando,
Yurong Yang,
E. Bousquet,
C. Carretero,
V. Garcia,
S. Fusil,
D. Dolfi,
A. Barthelemy,
Ph. Ghosez,
L. Bellaiche,
M. Bibes
Abstract:
The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitax…
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The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitaxial strain engineering to tune the optical response of BiFeO3 thin films, and find a very large variation of the optical index with strain, corresponding to an effective elasto-optic coefficient larger than that of quartz. We observe a concomitant strain-driven variation in light absorption - reminiscent of piezochromism - which we show can be manipulated by an electric field. This constitutes an electrochromic effect that is reversible, remanent and not driven by defects. These findings broaden the potential of multiferroics towards photonics and thin film acousto-optic devices, and suggest exciting device opportunities arising from the coupling of ferroic, piezoelectric and optical responses.
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Submitted 29 August, 2017;
originally announced August 2017.
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Titanium oxynitride thin films with tunable double epsilon-near-zero behaviour
Authors:
Laurentiu Braic,
Nikolaos Vasilantonakis,
Andrei P. Mihai,
Ignacio J. Villar Garcia,
Sarah Fearn,
Bin Zou,
Brock Doiron,
Rupert F. Oulton,
Lesley Cohen,
Stefan A. Maier,
Neil McN. Alford,
Anatoly V. Zayats,
Peter K. Petrov
Abstract:
Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and their optical properties are presented. The films grown when the level of residual Oxygen in the background vacuum was between 5E-9Torr to 20E-9Torr exhibit double Epsilon-Near-Zero (2-ENZ) behaviour with ENZ1 and ENZ2 wavelengths tunable in the 700-8…
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Titanium Oxynitride (TiOxNy) thin films are fabricated using reactive magnetron sputtering. The mechanism of their growth formation is explained and their optical properties are presented. The films grown when the level of residual Oxygen in the background vacuum was between 5E-9Torr to 20E-9Torr exhibit double Epsilon-Near-Zero (2-ENZ) behaviour with ENZ1 and ENZ2 wavelengths tunable in the 700-850 nm and in the 1100-1350 nm spectral ranges, respectively. Samples fabricated when the level of residual Oxygen in the background vacuum was above 2E-8Torr exhibit non-metallic behaviour, while the layers deposited when the level of residual Oxygen in the background vacuum was below 5E-9Torr, show metallic behaviour with a single ENZ value. The double ENZ phenomenon is related to the level of residual Oxygen in the background vacuum and is attributed to the mixture of TiN and TiOxNy/TiOx phases in the films. Varying the partial pressure of nitrogen during the deposition can further control the amount of TiN, TiOx and TiOxNy compounds in the films and, therefore, tune the screened plasma wavelength. A good approximation of the ellipsometric behaviour is achieved with Maxwell-Garnett theory for a composite film formed by a mixture of TiO2 and TiN phases suggesting that double ENZ TiOxNy films are formed by inclusions of TiN within a TiO2 matrix. These oxynitride compounds could be considered as new materials exhibiting double ENZ in the visible and near-IR spectral ranges.
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Submitted 28 March, 2017;
originally announced March 2017.
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A high-temperature superconducting weak-link defined by ferroelectric field-effect
Authors:
L. Begon-Lours,
V. Rouco,
A. Sander,
J. Trastoy,
R. Bernard,
E. Jacquet,
K. Bouzehouane,
S. Fusil,
V. Garcia,
A. Barthelemy,
M. Bibes,
J. Santamaría,
J. E. Villegas
Abstract:
In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a…
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In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. This leads either to an enhancement or a depression of its critical temperature depending on FE polarization direction.Here we exploit this effect at a local scale to define planar weak-links in high-temperature superconducting wires. This is realized in BiFeO3(FE)/YBa2Cu3O7(S)bilayers in which the remnant FE domain structure is written at will by locally applying voltage pulses with a conductive-tip atomic force microscope. In this fashion, the FE domain pattern defines a spatial modulation of superconductivity. This allows us to write a device whose electrical transport shows different temperature regimes and magnetic field matching effects that are characteristic of Josephson coupled weak-links. This illustrates the potential of the ferroelectric approach for the realization of high-temperature superconducting devices.
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Submitted 3 March, 2017;
originally announced March 2017.
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High-performance ferroelectric memory based on fully patterned tunnel junctions
Authors:
S. Boyn,
S. Girod,
V. Garcia,
S. Fusil,
S. Xavier,
C. Deranlot,
H. Yamada,
C. Carrétéro,
E. Jacquet,
M. Bibes,
A. Barthélémy,
J. Grollier
Abstract:
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared…
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In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.
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Submitted 6 February, 2014;
originally announced February 2014.
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A ferroelectric memristor
Authors:
André Chanthbouala,
Vincent Garcia,
Ryan O. Cherifi,
Karim Bouzehouane,
Stéphane Fusil,
Xavier Moya,
Stéphane Xavier,
Hiroyuki Yamada,
Cyrile Deranlot,
Neil D. Mathur,
Manuel Bibes,
Agnès Barthélémy,
Julie Grollier
Abstract:
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain conf…
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Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
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Submitted 15 June, 2012;
originally announced June 2012.
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Testing an agent-based model of bacterial cell motility: How nutrient concentration affects speed distribution
Authors:
Victor Garcia,
Mirko Birbaumer,
Frank Schweitzer
Abstract:
We revisit a recently proposed agent-based model of active biological motion and compare its predictions with own experimental findings for the speed distribution of bacterial cells, \emph{Salmonella typhimurium}. Agents move according to a stochastic dynamics and use energy stored in an internal depot for metabolism and active motion. We discuss different assumptions of how the conversion from in…
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We revisit a recently proposed agent-based model of active biological motion and compare its predictions with own experimental findings for the speed distribution of bacterial cells, \emph{Salmonella typhimurium}. Agents move according to a stochastic dynamics and use energy stored in an internal depot for metabolism and active motion. We discuss different assumptions of how the conversion from internal to kinetic energy $d(v)$ may depend on the actual speed, to conclude that $d_{2}v^ξ$ with either $ξ=2$ or $1<ξ<2$ are promising hypotheses. To test these, we compare the model's prediction with the speed distribution of bacteria which were obtained in media of different nutrient concentration and at different times. We find that both hypotheses are in line with the experimental observations, with $ξ$ between 1.67 and 2.0. Regarding the influence of a higher nutrient concentration, we conclude that the take-up of energy by bacterial cells is indeed increased. But this energy is not used to increase the speed, with 40$μ$m/s as the most probable value of the speed distribution, but is rather spend on metabolism and growth.
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Submitted 16 September, 2011;
originally announced September 2011.
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Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces
Authors:
O. Copie,
V. Garcia,
C. Bodefeld,
C. Carretero,
M. Bibes,
G. Herranz,
E. Jacquet,
J. -L. Maurice,
B. Vinter,
S. Fusil,
K. Bouzehouane,
H. Jaffres,
A. Barthelemy
Abstract:
Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into a…
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Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality.
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Submitted 13 May, 2009;
originally announced May 2009.
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Biaxial Strain in the Hexagonal Plane of MnAs Thin Films: The Key to Stabilize Ferromagnetism to Higher Temperature
Authors:
V. Garcia,
Y. Sidis,
M. Marangolo,
F. Vidal,
M. Eddrief,
P. Bourges,
F. Maccherozzi,
F. Ott,
G. Panaccione,
V. H. Etgens
Abstract:
The alpha-beta magneto-structural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 K to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more import…
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The alpha-beta magneto-structural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 K to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more important, for the stabilization of the ferromagnetic alpha-phase at higher temperature than in bulk. We explain the premature appearance of the beta-phase at 275 K and the persistence of the ferromagnetic alpha-phase up to 350 K with thermodynamical arguments based on the MnAs phase diagram. It results that the biaxial strain in the hexagonal plane is the key parameter to extend the ferromagnetic phase well over room temperature.
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Submitted 2 August, 2007;
originally announced August 2007.
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Detection of the magneto-structural phase coexistence in MnAs epilayers at a very early stage
Authors:
J. Milano,
L. B. Steren,
A. H. V. Repetto Llamazares,
V. Garcia,
M. Marangolo,
M. Eddrief,
V. H. Etgens
Abstract:
We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100) and (111) GaAs substrates. The FMR spectra of the MnAs/GaAs(100) samples at 180 K reveal the appearance of zones of different magnetic behavior…
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We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100) and (111) GaAs substrates. The FMR spectra of the MnAs/GaAs(100) samples at 180 K reveal the appearance of zones of different magnetic behavior with respect to the low-temperature homogeneous ferromagnetic phase. The angular and the temperature dependence of the spectra serve us to detect the inter-growth of the non-magnetic phase into the ferromagnetic phase at a very early stage of the process. The experimental data show that the new phase nucleates in a self-arranged array of stripes in MnAs/GaAs(100) thin films while it grows randomly in the same films grown on GaAs(111).
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Submitted 4 July, 2007;
originally announced July 2007.
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Magnetization reversal and anomalous coercive field temperature dependence in MnAs epilayers grown on GaAs(100) and GaAs(111)B
Authors:
L. B. Steren,
J. Milano,
V. Garcia,
M. Marangolo,
M. Eddrief,
V. H. Etgens
Abstract:
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature…
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The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature dependence of the coercivity of the films has been also examined, displaying a generic anomalous reentrant behavior at T$>$200 K. This feature is independent of the substrate orientation and films thickness and may be associated to the appearance of new pinning centers due to the nucleation of the $β$-phase at high temperatures.
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Submitted 27 June, 2006;
originally announced June 2006.
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Spin-dependent tunneling through high-k LaAlO3
Authors:
V. Garcia,
M. Bibes,
J. -L. Maurice,
E. Jacquet,
K. Bouzehouane,
J. -P. Contour,
A. Barthelemy
Abstract:
We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, eviden…
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We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2/3Sr1/3MnO3/LAO interface. Remarkably, the TMR of La2/3Sr1/3MnO3/LAO/Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2/3Sr1/3MnO3/STO/Co junctions. We discuss possible reasons for this behaviour.
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Submitted 19 July, 2005;
originally announced July 2005.
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Superconductivity of bulk CaC6
Authors:
N. Emery,
C. Herold,
M. d Astuto,
V. Garcia,
Ch. Bellin,
J. F. Mareche,
P. Lagrange,
G. Loupias
Abstract:
We have obtained bulk samples of the graphite intercalation compound, CaC6, by a novel method of synthesis from highly oriented pyrolytic graphite. The crystal structure has been completely determined showing that it is the only member of the MC6, metal-graphite compounds, which has rhombohedral symmetry. We have clearly shown the occurrence of superconductivity in the bulk sample at 11.5K, usin…
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We have obtained bulk samples of the graphite intercalation compound, CaC6, by a novel method of synthesis from highly oriented pyrolytic graphite. The crystal structure has been completely determined showing that it is the only member of the MC6, metal-graphite compounds, which has rhombohedral symmetry. We have clearly shown the occurrence of superconductivity in the bulk sample at 11.5K, using magnetization measurements.
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Submitted 3 June, 2005;
originally announced June 2005.
