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Temperature-independent ferromagnetic resonance shift in Bi-doped YIG garnets through magnetic anisotropy tuning
Authors:
Diane Gouéré,
Hugo Merbouche,
Aya El Kanj,
Felix Kohl,
Cécile Carrétéro,
Isabella Boventer,
Romain Lebrun,
Paolo Bortolotti,
Vincent Cros,
Jamal Ben Youssef,
Abdelmadjid Anane
Abstract:
Thin garnet films are becoming central for magnon-spintronics and spin-orbitronics devices as they show versatile magnetic properties together with low magnetic losses. These fields would benefit from materials in which heat does not affect the magnetization dynamics, an effect known as the non-linear thermal frequency shift. In this study, low damping Bi substituted Iron garnet (Bi:YIG) ultra-thi…
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Thin garnet films are becoming central for magnon-spintronics and spin-orbitronics devices as they show versatile magnetic properties together with low magnetic losses. These fields would benefit from materials in which heat does not affect the magnetization dynamics, an effect known as the non-linear thermal frequency shift. In this study, low damping Bi substituted Iron garnet (Bi:YIG) ultra-thin films have been grown using Pulsed Laser Deposition. Through a fine tuning of the growth parameters, the precise control of the perpendicular magnetic anisotropy allows to achieve a full compensation of the dipolar magnetic anisotropy. Strikingly, once the growth conditions are optimized, varying the growth temperature from 405 °C to 475 °C as the only tuning parameter induces the easy-axis to go from out-of-plane to in-plane. For films that are close to the dipolar compensation, Ferromagnetic Resonance measurements yield an effective magnetization $μ_{0}M_{eff} (T)$ that has almost no temperature dependence over a large temperature range (260 K to 400 K) resulting in an anisotropy temperature exponent of 2. These findings put Bi:YIG system among the very few materials in which the temperature dependence of the magnetic anisotropy varies at the same rate than the saturation magnetization. This interesting behavior is ascribed phenomenologically to the sizable orbital moment of $Bi^{3+}$.
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Submitted 1 February, 2023;
originally announced February 2023.
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Voltage-Controlled Reconfigurable Magnonic Crystal at the Submicron Scale
Authors:
Hugo Merbouche,
Isabella Boventer,
Victor Haspot,
Stephan Fusil,
Vincent Garcia,
Diane Gouere,
Cecile Carretero,
Aymeric Vecchiola,
Romain Lebrun,
Paolo Bortolotti,
Laurent Vila,
Manuel Bibes,
Agnes Barthelemy,
Abdelmadjid Anane
Abstract:
Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventual…
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Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic $\mathrm{BiFeO_3}$ with a periodicity of $500\,\mathrm{nm}$ yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic $\mathrm{La_{2/3}Sr_{1/3}MnO_3}$ magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with $>20 \,\mathrm{dB}$ rejection.
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Submitted 16 May, 2021;
originally announced May 2021.
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Real-space imaging of non-collinear antiferromagnetic order with a single spin magnetometer
Authors:
I. Gross,
W. Akhtar,
V. Garcia,
L. J. Martínez,
S. Chouaieb,
K. Garcia,
C. Carrétéro,
A. Barthélémy,
P. Appel,
P. Maletinsky,
J. -V. Kim,
J. Y. Chauleau,
N. Jaouen,
M. Viret,
M. Bibes,
S. Fusil,
V. Jacques
Abstract:
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and t…
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While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem and often possess remarkable extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or produce emergent spin-orbit effects, which enable efficient spin-charge interconversion. To harness these unique traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive scanning nanomagnetometer based on a single nitrogen-vacancy (NV) defect in diamond, we demonstrate the first real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film, at room temperature. We image the spin cycloid of a multiferroic BiFeO$_3$ thin film and extract a period of $\sim70$ nm, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO$_3$ to manipulate the cycloid propagation direction by an electric field. Besides highlighting the unique potential of NV magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO$_3$ can be used as a versatile platform for the design of reconfigurable nanoscale spin textures.
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Submitted 24 November, 2020;
originally announced November 2020.
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A journey into the tuneable antiferromagnetic spin textures of BiFeO3
Authors:
A. Haykal,
J. Fischer,
W. Akhtar,
J. -Y. Chauleau,
D. Sando,
A. Finco,
C. Carretero,
N. Jaouen,
M. Bibes,
M. Viret,
S. Fusil,
V. Jacques,
V. Garcia
Abstract:
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and ma…
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Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the submicron scale. Here we image a wide variety of antiferromagnetic spin textures in multiferroic BiFeO3 thin films that can be tuned by strain and manipulated by electric fields through room temperature magnetoelectric coupling. Using piezoresponse force microscopy and scanning NV magnetometry in self-organized ferroelectric patterns of BiFeO3, we reveal how strain stabilizes different types of non-collinear antiferromagnetic states (bulk-like and exotic spin cycloids) as well as collinear antiferromagnetic textures. Beyond these local-scale observations, resonant elastic X-ray scattering confirms the existence of both types of spin cycloids. Finally, we show that electric-field control of the ferroelectric landscape induces transitions either between collinear and non-collinear states or between different cycloids, offering perspectives for the design of reconfigurable antiferromagnetic spin textures on demand.
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Submitted 28 December, 2019;
originally announced December 2019.
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Ultra-low damping insulating magnetic thin films get perpendicular
Authors:
Lucile Soumah,
Nathan Beaulieu,
Lilia Qassym,
Cécile Carrétéro,
Eric Jacquet,
Richard Lebourgeois,
Jamal Ben Youssef,
Paolo Bortolotti,
Vincent Cros,
Abdelmadjid Anane
Abstract:
A magnetic material combining low losses and large Perpendicular Magnetic Anisotropy (PMA) is still a missing brick in the magnonic and spintronic fields. We report here on the growth of ultrathin Bismuth doped Y$_{3}$Fe$_{5}$O$_{12}$ (BiYIG) films on Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) and substituted GGG (sGGG) (111) oriented substrates. A fine tuning of the PMA is obtained using both epitaxial strai…
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A magnetic material combining low losses and large Perpendicular Magnetic Anisotropy (PMA) is still a missing brick in the magnonic and spintronic fields. We report here on the growth of ultrathin Bismuth doped Y$_{3}$Fe$_{5}$O$_{12}$ (BiYIG) films on Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) and substituted GGG (sGGG) (111) oriented substrates. A fine tuning of the PMA is obtained using both epitaxial strain and growth induced anisotropies. Both spontaneously in-plane and out-of-plane magnetized thin films can be elaborated. Ferromagnetic Resonance (FMR) measurements demonstrate the high dynamic quality of these BiYIG ultrathin films, PMA films with Gilbert damping values as low as 3 10$^{-4}$ and FMR linewidth of 0.3 mT at 8 GHz are achieved even for films that do not exceed 30 nm in thickness. Moreover, we measure Inverse Spin Hall Effect (ISHE) on Pt/BiYIG stacks showing that the magnetic insulator$'$s surface is transparent to spin current making it appealing for spintronic applications.
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Submitted 2 June, 2018;
originally announced June 2018.
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Modulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation
Authors:
S. Cervera,
M Trassinelli,
M Marangolo,
C Carrétéro,
V Garcia,
S Hidki,
E Jacquet,
E Lamour,
A Lévy,
S Macé,
C Prigent,
J Rozet,
S Steydli,
D Vernhet
Abstract:
Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternative to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials, optimal refrigeration is restricted to the narrow temperature window of the phase transition (Tc). In this work, we present the possibility of varying this transit…
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Magnetic refrigeration based on the magnetocaloric effect at room temperature is one of the most attractive alternative to the current gas compression/expansion method routinely employed. Nevertheless, in giant magnetocaloric materials, optimal refrigeration is restricted to the narrow temperature window of the phase transition (Tc). In this work, we present the possibility of varying this transition temperature into a same giant magnetocaloric material by ion irradiation. We demonstrate that the transition temperature of iron rhodium thin films can be tuned by the bombardment of ions of Ne 5+ with varying fluences up to 10 14 ions cm --2 , leading to optimal refrigeration over a large 270--380 K temperature window. The Tc modification is found to be due to the ion-induced disorder and to the density of new point-like defects. The variation of the phase transition temperature with the number of incident ions opens new perspectives in the conception of devices using giant magnetocaloric materials.
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Submitted 23 October, 2017;
originally announced October 2017.
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Strain and Magnetic Field Induced Spin-Structure Transitions in Multiferroic BiFeO3
Authors:
A. Agbelele,
D. Sando,
C. Toulouse,
C. Paillard,
R. D. Johnson,
R. Ruffer,
A. F. Popkov,
C. Carretero,
P. Rovillain,
J. -M. Le Breton,
B. Dkhil,
M. Cazayous,
Y. Gallais,
M. -A. Measson,
A. Sacuto,
P. Manuel,
A. K. Zvezdin,
A. Barthelemy,
J. Juraszek,
M. Bibes
Abstract:
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field-controlled spintronic and magnonic devices.
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly lower than in the bulk, with appealing implications for field-controlled spintronic and magnonic devices.
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Submitted 30 August, 2017;
originally announced August 2017.
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Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator
Authors:
M. Marinova,
J. E. Rault,
A. Gloter,
S. Nemsak,
G. K. Palsson,
J. -P. Rueff,
C. S. Fadley,
C. Carretero,
H. Yamada,
K. March,
V. Garcia,
S. Fusil,
A. Barthelemy,
O. Stephan,
C. Colliex,
M. Bibes
Abstract:
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly kn…
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The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
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Submitted 30 August, 2017;
originally announced August 2017.
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Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3
Authors:
D. Sando,
Yurong Yang,
E. Bousquet,
C. Carretero,
V. Garcia,
S. Fusil,
D. Dolfi,
A. Barthelemy,
Ph. Ghosez,
L. Bellaiche,
M. Bibes
Abstract:
The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitax…
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The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology - a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitaxial strain engineering to tune the optical response of BiFeO3 thin films, and find a very large variation of the optical index with strain, corresponding to an effective elasto-optic coefficient larger than that of quartz. We observe a concomitant strain-driven variation in light absorption - reminiscent of piezochromism - which we show can be manipulated by an electric field. This constitutes an electrochromic effect that is reversible, remanent and not driven by defects. These findings broaden the potential of multiferroics towards photonics and thin film acousto-optic devices, and suggest exciting device opportunities arising from the coupling of ferroic, piezoelectric and optical responses.
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Submitted 29 August, 2017;
originally announced August 2017.
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High-performance ferroelectric memory based on fully patterned tunnel junctions
Authors:
S. Boyn,
S. Girod,
V. Garcia,
S. Fusil,
S. Xavier,
C. Deranlot,
H. Yamada,
C. Carrétéro,
E. Jacquet,
M. Bibes,
A. Barthélémy,
J. Grollier
Abstract:
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared…
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In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.
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Submitted 6 February, 2014;
originally announced February 2014.
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Inverse Spin Hall Effect in nanometer-thick YIG/Pt system
Authors:
O. d'Allivy Kelly,
A. Anane,
R. Bernard,
J. Ben Youssef,
C. Hahn,
A-H. Molpeceres,
C. Carrétéro,
E. Jacquet,
C. Deranlot,
P. Bortolotti,
R. Lebourgois,
J-C. Mage,
G. de Loubens,
O. Klein,
V. Cros,
A. Fert
Abstract:
High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshap…
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High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.
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Submitted 1 August, 2013;
originally announced August 2013.
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Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces
Authors:
O. Copie,
V. Garcia,
C. Bodefeld,
C. Carretero,
M. Bibes,
G. Herranz,
E. Jacquet,
J. -L. Maurice,
B. Vinter,
S. Fusil,
K. Bouzehouane,
H. Jaffres,
A. Barthelemy
Abstract:
Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into a…
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Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality.
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Submitted 13 May, 2009;
originally announced May 2009.
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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions
Authors:
Jean-Luc Maurice,
Gervasi Herranz,
Christian Colliex,
Isabelle Devos,
Cécile Carrétéro,
Agnès Barthelemy,
Karim Bouzehouane,
Stéphane Fusil,
Dominique Imhoff,
Éric Jacquet,
François Jomard,
Dominique Ballutaud,
Mario Basletic
Abstract:
At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope,…
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At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.
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Submitted 3 December, 2007;
originally announced December 2007.
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Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures
Authors:
M. Basletic,
J. -L. Maurice,
C. Carretero,
G. Herranz,
O. Copie,
M. Bibes,
E. Jacquet,
K. Bouzehouane,
S. Fusil,
A. Barthelemy
Abstract:
At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of…
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At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.
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Submitted 31 March, 2008; v1 submitted 6 October, 2007;
originally announced October 2007.
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High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
C. Carretero,
E. Tafra,
E. Jacquet,
K. Bouzehouane,
C. Deranlot,
A. Hamzic,
J. -M. Broto,
A. Barthelemy,
A. Fert
Abstract:
We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experi…
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We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.
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Submitted 19 April, 2007;
originally announced April 2007.
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Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures
Authors:
G. Herranz,
M. Basletic,
M. Bibes,
C. Carretero,
E. Tafra,
E. Jacquet,
K. Bouzehouane,
C. Deranlot,
J. -L. Maurice,
A. Hamzic,
J. -P. Contour,
A. Barthelemy,
A. Fert
Abstract:
LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigat…
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LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the doping of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices.
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Submitted 7 June, 2006;
originally announced June 2006.
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Electronic conductivity and structural distortion at the interface between insulators SrTiO3 and LaAlO3
Authors:
J. -L. Maurice,
C. Carretero,
M. -J. Casanove,
K. Bouzehouane,
S. Guyard,
É. Larquet,
J. -P. Contour
Abstract:
When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as {100} surfaces of SrTiO3 are neutral while those of LaAlO3 are polar, but its microscopic mechanism is not quite understood. Here, we present a structural chara…
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When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as {100} surfaces of SrTiO3 are neutral while those of LaAlO3 are polar, but its microscopic mechanism is not quite understood. Here, we present a structural characterisation of this interface by aberration-corrected transmission electron microscopy. The unit cells at the interface appear elongated: we discuss this distortion in terms of electrostatic charge and extra carriers at the interface.
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Submitted 13 March, 2006; v1 submitted 4 November, 2005;
originally announced November 2005.
