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Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
Authors:
D. Babich,
J. Tranchant,
C. Adda,
B. Corraze,
M. -P. Besland,
P. Warnicke,
D. Bedau,
P. Bertoncini,
J. -Y. Mevellec,
B. Humbert,
J. Rupp,
T. Hennen,
D. Wouters,
R. Llopis,
L. Cario,
E. Janod
Abstract:
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still…
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Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.
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Submitted 20 October, 2021; v1 submitted 11 May, 2021;
originally announced May 2021.
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Anisotropy induced spin re-orientation in chemically-modulated amorphous ferrimagnetic films
Authors:
E. Kirk,
C. Bull,
S. Finizio,
H. Sepehri-Amin,
S. Wintz,
A. K. Suszka,
N. S. Bingham,
P. Warnicke,
K. Hono,
P. W. Nutter,
J. Raabe,
G. Hrkac,
T. Thomson,
L. J. Heyderman
Abstract:
The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such a tuneable, temperature driven spin re-orientation in structurally amorphous, ferrimagnetic rare earth-transition metal (RE-TM) alloy thin films using scanning…
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The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such a tuneable, temperature driven spin re-orientation in structurally amorphous, ferrimagnetic rare earth-transition metal (RE-TM) alloy thin films using scanning transmission X-ray microscopy (STXM) and magnetic measurements. The nature of the spin re-orientation transition in FeGd can be fully explained by a non-equilibrium, nanoscale modulation of the chemical composition of the films. This modulation leads to a magnetic domain pattern of nanoscale speckles superimposed on a background of in-plane domains that form Laudau configurations in micron-scale patterned elements. It is this speckle magnetic structure that gives rise to a sharp two step-reversal mechanism that is temperature dependent. The possibility to balance competing anisotropies through the temperature opens opportunities to create and manipulate topological spin textures.
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Submitted 7 July, 2020;
originally announced July 2020.
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Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmion at room temperature
Authors:
Constance Moreau-Luchaire,
Christoforos Moutafis,
Nicolas Reyren,
José J. Sampaio,
Karim Bouzehouane,
Cyrile Deranlot,
P. Warnicke,
C. A. F. Vaz,
N. Van Horne,
Karin Garcia,
P. Wohlhüter,
Jean-Marie George,
M. Weigand,
Jörg Raabe,
Vincent Cros,
Albert Fert
Abstract:
Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriy…
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Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach a value close to 2 mJ m-2 in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged small magnetic domains at very low field in these multilayers. The study of their behavior in perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large Dzyaloshinskii-Moriya interaction. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.
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Submitted 11 July, 2016;
originally announced July 2016.
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Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors
Authors:
J. Krempasky,
S. Muff,
F. Bisti,
M. Fanciulli,
H. Volfová,
A. Weber,
N. Pilet,
P. Warnicke,
H. Ebert,
J. Braun,
F. Bertran,
V. V. Volobuev,
J. Minár,
G. Springholz,
J. H. Dil,
V. N. Strocov
Abstract:
The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Her…
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The interplay between electronic eigenstates, spin, and orbital degrees of freedom, combined with fundamental breaking of symmetries is currently one of the most exciting fields of research. Multiferroics such as (GeMn)Te fulfill these requirements providing unusual physical properties due to the coexistence and coupling between ferromagnetic and ferroelectric order in one and the same system. Here we show that multiferroic (GeMn)Te inherits from its parent ferroelectric α-GeTe compound a giant Rashba splitting of three-dimensional bulk states which competes with the Zeeman spin splitting induced by the magnetic exchange interactions. The collinear alignment of ferroelectric and ferromagnetic polarization leads to an opening of a tunable Zeeman gap of up to 100 meV around the Dirac point of the Rashba bands, coupled with a change in spin texture by entanglement of magnetic and spin-orbit order. Through applications of magnetic fields, we demonstrate manipulation of spin- texture by spin resolved photoemission experiments, which is also expected for electric fields based on the multiferroic coupling. The control of spin helicity of the bands and its locking to ferromagnetic and ferroelectric order opens fascinating new avenues for highly multifunctional multiferroic Rashba devices suited for reprogrammable logic and/or nonvolatile memory applications.
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Submitted 5 June, 2016; v1 submitted 1 June, 2016;
originally announced June 2016.
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Skyrmions at room temperature : From magnetic thin films to magnetic multilayers
Authors:
C. Moreau-Luchaire,
C. Moutafis,
N. Reyren,
J. Sampaio,
N. Van Horne,
C. A. F. Vaz,
K. Bouzehouane,
K. Garcia,
C. Deranlot,
P. Warnicke,
P. Wohlhüter,
J. M. George,
J. Raabe,
V. Cros,
A. Fert
Abstract:
Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interact…
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Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m2 in the case of the Ir/Co/Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavir in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinsskii-Moriya interaction. This discoevry of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.
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Submitted 27 February, 2015;
originally announced February 2015.
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Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers
Authors:
Ronny Knut,
Peter Svedlindh,
Klas Gunnarsson,
Oleg Mryasov,
Peter Warnicke,
Dario Arena,
Matts Björck,
D. D. Sarma,
Anindita Sahoo,
Sumanta Mukherjee,
Sari Granroth,
Mihaela Gorgoi,
Olof Karis
Abstract:
All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find th…
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All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 Å thick magnetically dead layer that, together with the identified interlayer diffusion, are likely reasons for the small magnetoresistance found for current-perpendicular-to-plane giant magneto-resistance devices based on this all-Heusler system.
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Submitted 24 January, 2013; v1 submitted 2 November, 2012;
originally announced November 2012.
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Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
Authors:
V. Stanciu,
O. Wilhelmsson,
U. Bexell,
M. Adell,
J. Sadowski,
J. Kanski,
P. Warnicke,
P. Svedlindh
Abstract:
The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two regions. The Tc peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second (`saturated') region the effect…
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The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two regions. The Tc peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second (`saturated') region the effect of the annealing time is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield Tc-values of ~ 150 K and above, regardless of the thickness of the epilayers.
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Submitted 2 May, 2005;
originally announced May 2005.
