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Electronic and magnetic structure of epitaxial NiO/Fe$_3$O$_4$(001) heterostructures grown on MgO(001) and Nb-doped SrTiO$_3$(001)
Authors:
K. Kuepper,
O. Kuschel,
N. Pathé,
T. Schemme,
J. Schmalhorst,
A. Thomas,
E. Arenholz M. Gorgoi,
R. Ovsyannikov,
S. Bartkowski,
G. Reiss,
J. Wollschläger
Abstract:
We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due t…
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We study the underlying chemical, electronic and magnetic properties of a number of magnetite based thin films. The main focus is placed onto NiO/Fe$_3$O$_4$(001) bilayers grown on MgO(001) and Nb-SrTiO$_3$(001) substrates. We compare the results with those obtained on pure Fe$_3$O$_4$(001) thin films. It is found that the magnetite layers are oxidized and Fe$^{3+}$ dominates at the surfaces due to maghemite ($γ$-Fe$_2$O$_3$) formation, which decreases with increasing magnetite layer thickness. From a layer thickness of around 20 nm on the cationic distribution is close to that of stoichiometric Fe$_3$O$_4$. At the interface between NiO and Fe$_3$O$_4$ we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe$_2$O$_4$ interlayer can be excluded by means of XMCD. Magneto optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and a 45$^{\circ}$ rotated magnetic easy axis. We discuss the spin magnetic moments of the magnetite layers and find that the moment increases with increasing thin film thickness. At low thickness the NiO/Fe$_3$O$_4$ films grown on Nb-SrTiO$_3$ exhibits a significantly decreased spin magnetic moments. A thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.
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Submitted 18 February, 2016;
originally announced February 2016.
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High photon energy spectroscopy of NiO: experiment and theory
Authors:
S. K. Panda,
Banabir Pal,
Suman Mandal,
Mihaela Gorgoi,
Shyamashis Das,
Indranil Sarkar,
Wolfgang Drube,
Weiwei Sun,
I. Di Marco,
A. Delin,
Olof Karis,
Y. O. Kvashnin,
M. van Schilfgaarde,
O. Eriksson,
D. D. Sarma
Abstract:
We have revisited the valence band electronic structure of NiO by means of hard x-ray photoemission spectroscopy (HAXPES) together with theoretical calculations using both the GW method and the local density approximation + dynamical mean-field theory (LDA+DMFT) approaches. The effective impurity problem in DMFT is solved through the exact diagonalization (ED) method. We show that the LDA+DMFT met…
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We have revisited the valence band electronic structure of NiO by means of hard x-ray photoemission spectroscopy (HAXPES) together with theoretical calculations using both the GW method and the local density approximation + dynamical mean-field theory (LDA+DMFT) approaches. The effective impurity problem in DMFT is solved through the exact diagonalization (ED) method. We show that the LDA+DMFT method alone cannot explain all the observed structures in the HAXPES spectra. GW corrections are required for the O bands and Ni-s and p derived states to properly position their binding energies. Our results establish that a combination of the GW and DMFT methods is necessary for correctly describing the electronic structure of NiO in a proper ab-initio framework. We also demonstrate that the inclusion of photoionization cross section is crucial to interpret the HAXPES spectra of NiO.We argue that our conclusions are general and that the here suggested approach is appropriate for any complex transition metal oxide.
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Submitted 13 January, 2016;
originally announced January 2016.
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Interface Engineering to Create a Strong Spin Filter Contact to Silicon
Authors:
C. Caspers,
A. Gloskovskii,
M. Gorgoi,
C. Besson,
M. Luysberg,
K. Rushchanskii,
M. Ležaić,
C. S. Fadley,
W. Drube,
M. Müller
Abstract:
Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality.
To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides.
We present a solution to this long-standi…
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Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality.
To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides.
We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface:
($i$) an $in\:situ$ hydrogen-Si $(001)$ passivation and ($ii$) the application of oxygen-protective Eu monolayers --- without using any additional buffer layers.
By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime --- and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si $(001)$ in order to create a strong spin filter contact to silicon.
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Submitted 17 March, 2016; v1 submitted 20 April, 2015;
originally announced April 2015.
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Enhanced ferrimagnetism in auxetic NiFe2O4 in the crossover to the ultrathin film limit
Authors:
Michael Hoppe,
Sven Döring,
Mihaela Gorgoi,
Stefan Cramm,
Martina Müller
Abstract:
We investigate the sensitive interplay between magnetic, electronic and structural properties in the ferrimagnetic oxide NiFe2O4. Emphasis is placed on the impact of reduced dimensionality in the crossover from bulk-like to ultrathin films. We observed an enhanced saturation magnetization $M_S$ for ultrathin NiFe2O4 films on Nb-SrTiO3 (001) substrates that co-occurs with a reduced out-of-plane lat…
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We investigate the sensitive interplay between magnetic, electronic and structural properties in the ferrimagnetic oxide NiFe2O4. Emphasis is placed on the impact of reduced dimensionality in the crossover from bulk-like to ultrathin films. We observed an enhanced saturation magnetization $M_S$ for ultrathin NiFe2O4 films on Nb-SrTiO3 (001) substrates that co-occurs with a reduced out-of-plane lattice constant under compressive in-plane epitaxial strain. We found a bulk-like cationic coordination of the inverse spinel lattice independent of the NiFe2O4 film thickness -- thus ruling out a cationic inversion that nominally could account for an enhanced $M_S$. Our study instead uncovers a reduction of the unit cell volume, i.e. an auxetic behavior in ultrathin NiFe2O4 films, which may result in an enhanced magnetic exchange caused by an increased interatomic electronic localization.
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Submitted 31 October, 2014;
originally announced October 2014.
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Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures
Authors:
E. Slooten,
Zhicheng Zhong,
H. J. A. Molegraaf,
P. D. Eerkes,
S. de Jong,
F. Massee,
E. van Heumen,
M. K. Kruize,
S. Wenderich,
J. E. Kleibeuker,
M. Gorgoi,
H. Hilgenkamp,
A. Brinkman,
M. Huijben,
G. Rijnders,
D. H. A. Blank,
G. Koster,
P. J. Kelly,
M. S. Golden
Abstract:
A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly s…
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A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.
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Submitted 11 February, 2013; v1 submitted 10 January, 2013;
originally announced January 2013.
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Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers
Authors:
Ronny Knut,
Peter Svedlindh,
Klas Gunnarsson,
Oleg Mryasov,
Peter Warnicke,
Dario Arena,
Matts Björck,
D. D. Sarma,
Anindita Sahoo,
Sumanta Mukherjee,
Sari Granroth,
Mihaela Gorgoi,
Olof Karis
Abstract:
All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find th…
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All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 Å thick magnetically dead layer that, together with the identified interlayer diffusion, are likely reasons for the small magnetoresistance found for current-perpendicular-to-plane giant magneto-resistance devices based on this all-Heusler system.
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Submitted 24 January, 2013; v1 submitted 2 November, 2012;
originally announced November 2012.
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K-edge X-ray absorption spectra in transition metal oxides beyond the single particle approximation: shake-up many body effects
Authors:
M. Calandra,
J. P. Rueff,
C. Gougoussis,
D. Ceolin,
M. Gorgoi,
S. Benedetti,
P. Torelli,
A. Shukla,
D. Chandesris,
Ch. Brouder
Abstract:
The near edge structure (XANES) in K-edge X-ray absorption spectroscopy (XAS) is a widely used tool for studying electronic and local structure in materials. The precise interpretation of these spectra with the help of calculations is hence of prime importance, especially for the study of correlated materials which have a complicated electronic structure per se. The single particle approach, for e…
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The near edge structure (XANES) in K-edge X-ray absorption spectroscopy (XAS) is a widely used tool for studying electronic and local structure in materials. The precise interpretation of these spectra with the help of calculations is hence of prime importance, especially for the study of correlated materials which have a complicated electronic structure per se. The single particle approach, for example, has generally limited itself to the dominant dipolar cross-section. It has long been known however that effects beyond this approach should be taken into account, both due to the inadequacy of such calculations when compared to experiment and the presence of shake-up many-body satellites in core-level photoemission spectra of correlated materials. This effect should manifest itself in XANES spectra and the question is firstly how to account for it theoretically and secondly how to verify it experimentally. By using state-of-the-art first principles electronic structure calculations and 1s photoemission measurements we demonstrate that shake-up many-body effects are present in K-edge XAS dipolar spectra of NiO, CoO and CuO at all energy scales. We show that shake-up effects can be included in K-edge XAS spectra in a simple way by convoluting the single-particle first-principles calculations including core-hole effects with the 1s photoemission spectra. We thus describe all features appearing in the XAS dipolar cross-section of NiO and CoO and obtain a dramatic improvement with respect to the single-particle calculation in CuO. These materials being prototype correlated magnetic oxides, our work points to the presence of shake-up effects in K-edge XANES of most correlated transition metal compounds and shows how to account for them, paving the way to a precise understanding of their electronic structure.
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Submitted 19 June, 2012;
originally announced June 2012.
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Epitaxial growth of Fe3O4 thin films on ZnO and MgO substrates
Authors:
A. Müller,
A. Ruff,
M. Paul,
A. Wetscherek,
G. Berner,
C. Praetorius,
K. Fauth,
U. Bauer,
M. Przybylski,
M. Gorgoi,
M. Sing,
R. Claessen
Abstract:
Magnetite thin fims have been grown epitaxially on ZnO and MgO substrates using molecular beam epitaxy. The film quality was found to be strongly dependent on the oxygen partial pressure during growth. Structural, electronic, and magnetic properties were analyzed utilizing Low Energy Electron Diffraction (LEED), HArd X-ray PhotoElectron Spectroscopy (HAXPES), Magneto Optical Kerr Effect (MOKE),…
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Magnetite thin fims have been grown epitaxially on ZnO and MgO substrates using molecular beam epitaxy. The film quality was found to be strongly dependent on the oxygen partial pressure during growth. Structural, electronic, and magnetic properties were analyzed utilizing Low Energy Electron Diffraction (LEED), HArd X-ray PhotoElectron Spectroscopy (HAXPES), Magneto Optical Kerr Effect (MOKE), and X-ray Magnetic Circular Dichroism (XMCD). Diffraction patterns show clear indication for growth in the (111) direction on ZnO. Vertical structure analysis by HAXPES depth profiling revealed uniform magnetite thin films on both type of substrates. Both, MOKE and XMCD measurements show in-plane easy magnetization with a reduced magnetic moment in case of the films on ZnO.
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Submitted 18 November, 2009;
originally announced November 2009.
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Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4 using hard x-ray photoemission spectroscopy
Authors:
Kalobaran Maiti,
Jorg Fink,
Sanne de Jong,
Mihaela Gorgoi,
Chengtian Lin,
Markus Raichle,
Vladimir Hinkov,
Michael Lambacher,
Andreas Erb,
Mark S. Golden
Abstract:
The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core level spectra…
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The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core level spectra exhibits a shift in binding energy as a function of x, from which a shift of the chemical potential as a function of hole concentration in the CuO2 layers could be derived. The doping dependence of the chemical potential across the transition from a Mott-Hubbard insulator to a Fermi-liquid-like metal is very different in these two series of compounds. In agreement with previous studies in the literature the chemical potential shift in La2-xSrxCuO4 is close to zero for small hole concentrations. In YBa2Cu3O6+x, similar to all other doped cuprates studied so far, a strong shift of the chemical potential at low hole doping is detected. However, the results for the inverse charge susceptibility at small x shows a large variation between different doped cuprates. The results are discussed in view of various theoretical models. None of these models turns out to be satisfactory.
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Submitted 15 June, 2009;
originally announced June 2009.
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A high resolution, hard x-ray photoemission investigation of La_(2-2x)Sr_(1+2x)Mn_2O_7 (0.30<x<0.50): on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite
Authors:
S. de Jong,
F. Massee,
Y. Huang,
M. Gorgoi,
F. Schaefers,
J. Fink,
A. T. Boothroyd,
D. Prabhakaran,
J. B. Goedkoop,
M. S. Golden
Abstract:
Photoemission data taken with hard x-ray radiation on cleaved single crystals of the bilayered, colossal magnetoresistant manganite La_(2-2x)Sr_(1+2x)Mn_2O_7 (LSMO) with 0.30<x<0.50 are presented. Making use of the increased bulk-sensitivity upon hard x-ray excitation it is shown that the core level footprint of the electronic structure of the LSMO cleavage surface is identical to that of the bu…
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Photoemission data taken with hard x-ray radiation on cleaved single crystals of the bilayered, colossal magnetoresistant manganite La_(2-2x)Sr_(1+2x)Mn_2O_7 (LSMO) with 0.30<x<0.50 are presented. Making use of the increased bulk-sensitivity upon hard x-ray excitation it is shown that the core level footprint of the electronic structure of the LSMO cleavage surface is identical to that of the bulk. Furthermore, by comparing the core level shift of the different elements as a function of doping level x, it is shown that microscopic phase separation is unlikely to occur for this particular manganite well above the Curie temperature.
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Submitted 21 March, 2009;
originally announced March 2009.
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A high resolution, hard X-ray photoemission investigation of BaFe$_2$As$_2$: moderate influence of the surface and evidence for a low degree of Fe 3d - As 4p hybridization of the near-E$_F$ electronic states
Authors:
S. de Jong,
Y. Huang,
R. Huisman,
F. Massee,
S. Thirupathaiah,
M. Gorgoi,
R. Follath,
J. B. Goedkoop,
M. S. Golden
Abstract:
Photoemission data taken with hard X-ray radiation on cleaved single crystals of the barium parent compound of the MFe$_2$As$_2$ pnictide high temperature superconductor family are presented. Making use of the increased bulk-sensitivity upon hard X-ray excitation, and comparing the results to data taken at conventional VUV photoemission excitation energies, it is shown that the BaFe$_2$As$_2$ cl…
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Photoemission data taken with hard X-ray radiation on cleaved single crystals of the barium parent compound of the MFe$_2$As$_2$ pnictide high temperature superconductor family are presented. Making use of the increased bulk-sensitivity upon hard X-ray excitation, and comparing the results to data taken at conventional VUV photoemission excitation energies, it is shown that the BaFe$_2$As$_2$ cleavage surface provides an electrostatic environment that is slightly different to the bulk, most likely in the form of a modified Madelung potential. However, as the data argue against a different surface doping level, and the surface-related features in the spectra are by no means as dominating as seen in systems such as YBa$_2$Cu$_3$O$_x$, we can conclude that the itinerant, near-E$_F$ electronic states are almost unaffected by the existence of the cleavage surface. Furthermore, exploiting the strong changes in photoionisation cross section between the Fe and As states across the wide photon energy range employed, it is shown that the degree of energetic overlap between the iron 3d and arsenic 4p valence bands is particularly small at the Fermi level, which can only mean a very low degree of hybridization between the Fe 3d and As 4p states near and at E$_F$. Consequently, the itinerancy of the charge carriers in this group of materials involves mainly the Fe 3d - Fe 3d overlap integrals with at best a minor role for the Fe 3d - As 4p hopping parameters, and that the states which support superconductivity upon doping are essentially of Fe 3d character.
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Submitted 19 January, 2009;
originally announced January 2009.
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Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy
Authors:
M. Sing,
G. Berner,
K. Goss,
A. Muller,
A. Ruff,
A. Wetscherek,
S. Thiel,
J. Mannhart,
S. A. Pauli,
C. W. Schneider,
P. R. Willmott,
M. Gorgoi,
F. Schafers,
R. Claessen
Abstract:
The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruc…
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The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruction in the LaAlO$_3$ overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.
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Submitted 30 April, 2009; v1 submitted 11 September, 2008;
originally announced September 2008.
