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Carrier-Density Control of the Quantum-Confined 1$T$-TiSe$_2$ Charge-Density-Wave
Authors:
T. Jaouen,
A. Pulkkinen,
M. Rumo,
G. Kremer,
B. Salzmann,
C. W. Nicholson,
M. -L. Mottas,
E. Giannini,
S. Tricot,
P. Schieffer,
B. Hildebrand,
C. Monney
Abstract:
Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1$T$-TiSe$_2$ induce the creation of a two-dimensional electron gas (2DEG) and quantum confinement of its charge-density-wave (CDW) at the surface. By further changing the K cove…
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Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1$T$-TiSe$_2$ induce the creation of a two-dimensional electron gas (2DEG) and quantum confinement of its charge-density-wave (CDW) at the surface. By further changing the K coverage, we tune the carrier-density within the 2DEG that allows us to nullify, at the surface, the electronic energy gain due to exciton condensation in the CDW phase while preserving a long-range structural order. Our study constitutes a prime example of a controlled exciton-related many-body quantum state in reduced dimensionality by alkali-metal dosing.
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Submitted 11 May, 2023;
originally announced May 2023.
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Observation of the metallic mosaic phase in 1$T$-TaS$_2$ at equilibrium
Authors:
Björn Salzmann,
Elina Hujala,
Catherine Witteveen,
Baptiste Hildebrand,
Helmuth Berger,
Fabian O. von Rohr,
Christopher W. Nicholson,
Claude Monney
Abstract:
The transition-metal dichalcogenide tantalum disulphide (1$T$-TaS$_2$) hosts a commensurate charge density wave (CCDW) at temperatures below 165~K where it also becomes insulating. The low temperature CCDW phase can be driven into a metastable "mosaic" phase by means of either laser or voltage pulses which shows a large density of CDW domain walls as well as a closing of the electronic band gap. T…
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The transition-metal dichalcogenide tantalum disulphide (1$T$-TaS$_2$) hosts a commensurate charge density wave (CCDW) at temperatures below 165~K where it also becomes insulating. The low temperature CCDW phase can be driven into a metastable "mosaic" phase by means of either laser or voltage pulses which shows a large density of CDW domain walls as well as a closing of the electronic band gap. The exact origins of this pulse-induced metallic mosaic are not yet fully understood. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we observe the occurrence of such a metallic mosaic phase on the surface of TaS$_2$ without prior pulse excitation over continuous areas larger than $100 \times 100$~nm$^2$ and macroscopic areas on the millimetre scale. We attribute the appearance of the mosaic phase to the presence of surface defects which cause the formation of the characteristic dense domain wall network. Based on our STM measurements, we further argue how the appearance of the metallic behaviour in the mosaic phase could be explained by local stacking differences of the top layer. Thus, we provide a potential avenue to explain the origin of the pulse induced mosaic phase.
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Submitted 23 January, 2023; v1 submitted 16 September, 2022;
originally announced September 2022.
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Insensitivity of the striped charge-orders in IrTe$_2$ to alkali surface doping implies their structural origin
Authors:
M. Rumo,
A. Pulkkinen,
B. Salzmann,
G. Kremer,
B. Hildebrand,
K. Y. Ma,
F. O. von Rohr,
C. W. Nicholson,
T. Jaouen,
C. Monney
Abstract:
We present a combined angle-resolved photoemission spectroscopy and low-energy electron diffraction (LEED) study of the prominent transition metal dichalcogenide IrTe$_2$ upon potassium (K) deposition on its surface. Pristine IrTe$_2$ undergoes a series of charge-ordered phase transitions below room temperature that are characterized by the formation of stripes of Ir dimers of different periodicit…
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We present a combined angle-resolved photoemission spectroscopy and low-energy electron diffraction (LEED) study of the prominent transition metal dichalcogenide IrTe$_2$ upon potassium (K) deposition on its surface. Pristine IrTe$_2$ undergoes a series of charge-ordered phase transitions below room temperature that are characterized by the formation of stripes of Ir dimers of different periodicities. Supported by density functional theory calculations, we first show that the K atoms dope the topmost IrTe$_2$ layer with electrons, therefore strongly decreasing the work function and shifting only the electronic surface states towards higher binding energy. We then follow the evolution of its electronic structure as a function of temperature across the charge-ordered phase transitions and observe that their critical temperatures are unchanged for K coverages of $0.13$ and $0.21$~monolayer (ML). Using LEED, we also confirm that the periodicity of the related stripe phases is unaffected by the K doping. We surmise that the charge-ordered phase transitions of IrTe$_2$ are robust against electron surface doping, because of its metallic nature at all temperatures, and due to the importance of structural effects in stabilizing charge order in IrTe$_2$.
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Submitted 4 July, 2021; v1 submitted 16 June, 2021;
originally announced June 2021.
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Observation of a uniaxial strain-induced phase transition in the 2D topological semimetal IrTe$_2$
Authors:
C. W. Nicholson,
M. Rumo,
A. Pulkkinen,
G. Kremer,
B. Salzmann,
M. -L. Mottas,
B. Hildebrand,
T. Jaouen,
T. K. Kim,
S. Mukherjee,
K. Y. Ma,
M. Muntwiler,
F. O. von Rohr,
C. Cacho,
C. Monney
Abstract:
Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional (2D) transition metal dichalcogenides (TMDs) remains an open challenge. Her…
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Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional (2D) transition metal dichalcogenides (TMDs) remains an open challenge. Here, we exploit uniaxial strain to stabilize the long-debated structural ground state of the 2D topological semimetal IrTe$_2$, which is hidden in unstrained samples. Combined angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) data reveal the strain-stabilized phase has a 6x1 periodicity and undergoes a Lifshitz transition, granting unprecedented spectroscopic access to previously inaccessible type-II topological Dirac states that dominate the modified inter-layer hopping. Supported by density functional theory (DFT) calculations, we show that strain induces a charge transfer strongly weakening the inter-layer Te bonds and thus reshaping the energetic landscape of the system in favor of the 6x1 phase. Our results highlight the potential to exploit strain-engineered properties in layered materials, particularly in the context of tuning inter-layer behavior.
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Submitted 11 January, 2021;
originally announced January 2021.
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Nature of native atomic defects in ZrTe$_5$ and their impact on the low-energy electronic structure
Authors:
B. Salzmann,
A. Pulkkinen,
B. Hildebrand,
T. Jaouen,
S. N. Zhang,
E. Martino,
Q. Li,
G. Gu,
H. Berger,
O. V. Yazyev,
A. Akrap,
C. Monney
Abstract:
Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe$_5$ have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe$_5$ samples, especially given the very small density of states near its chemical potential. Here we report on high resolution scanning tunneling microscopy and spectroscopy measureme…
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Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe$_5$ have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe$_5$ samples, especially given the very small density of states near its chemical potential. Here we report on high resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe$_5$, namely Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.
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Submitted 29 October, 2020;
originally announced October 2020.
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Unveiling the complete dispersion of the giant Rashba split surface states of ferroelectric $α$-GeTe(111) by alkali doping
Authors:
G. Kremer,
T. Jaouen,
B. Salzmann,
L. Nicolaï,
M. Rumo,
C. W. Nicholson,
B. Hildebrand,
J. H. Dil,
J. Minár,
G. Springholz,
J. Krempaský,
C. Monney
Abstract:
$α…
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$α$-GeTe(111) is a non-centrosymmetric ferroelectric material, for which a strong spin-orbit interaction gives rise to giant Rashba split states in the bulk and at the surface. The detailed dispersions of the surface states inside the bulk band gap remains an open question because they are located in the unoccupied part of the electronic structure, making them inaccessible to static angle-resolved photoemission spectroscopy. We show that this difficulty can be overcome via in-situ potassium doping of the surface, leading to a rigid shift of 80 meV of the surface states into the occupied states. Thus, we resolve in great detail their dispersion and highlight their crossing at the $\barΓ$ point, which, in comparison with density functional theory calculations, definitively confirms the Rashba mechanism.
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Submitted 23 July, 2020; v1 submitted 3 April, 2020;
originally announced April 2020.
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Examining the surface phase diagram of IrTe$_2$ with photoemission
Authors:
M. Rumo,
C. W. Nicholson,
A. Pulkkinen,
B. Hildebrand,
G. Kremer,
B. Salzmann,
M. -L. Mottas,
K. Y. Ma,
E L. Wong,
M. K. L. Man,
K. M. Dani,
B. Barbiellini,
M. Muntwiller,
T. Jaouen,
F. O. von Rohr,
C. Monney
Abstract:
In the transition metal dichalcogenide IrTe$_2$, low-temperature charge-ordered phase transitions involving Ir dimers lead to the occurrence of stripe phases of different periodicities, and nearly degenerate energies. Bulk-sensitive measurements have shown that, upon cooling, IrTe$_2$ undergoes two such first-order transitions to $(5\times1\times5)$ and $(8\times1\times8)$ reconstructed phases at…
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In the transition metal dichalcogenide IrTe$_2$, low-temperature charge-ordered phase transitions involving Ir dimers lead to the occurrence of stripe phases of different periodicities, and nearly degenerate energies. Bulk-sensitive measurements have shown that, upon cooling, IrTe$_2$ undergoes two such first-order transitions to $(5\times1\times5)$ and $(8\times1\times8)$ reconstructed phases at $T_{c_1}\sim 280$~K and $T_{c_2}\sim 180$~K, respectively. Here, using surface sensitive probes of the electronic structure of IrTe$_2$, we reveal the first-order phase transition at $T_{c_3}=165$~K to the $(6\times1)$ stripes phase, previously proposed to be the surface ground state. This is achieved by combining x-ray photoemission spectroscopy and angle-resolved photoemission spectroscopy, which give access to the evolution of stripe domains and a particular surface state, the energy of which is dependent on the Ir dimer length. By performing measurements over a full thermal cycle, we also report the complete hysteresis of all these phases.
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Submitted 9 June, 2020; v1 submitted 10 December, 2019;
originally announced December 2019.
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Unveiling the Semimetallic Nature of 1$T$-TiSe$_2$ by Doping its Charge Density Wave
Authors:
T. Jaouen,
M. Rumo,
B. Hildebrand,
M. -L. Mottas,
C. W. Nicholson,
G. Kremer,
B. Salzmann,
F. Vanini,
C. Barreteau,
E. Giannini,
H. Beck,
P. Aebi,
C. Monney
Abstract:
The semimetallic or semiconducting nature of the transition metal dichalcogenide 1$T$-TiSe$_2$ remains under debate after many decades mainly due to the fluctuating nature of its 2 $\times$ 2 $\times$ 2 charge-density-wave (CDW) phase at room-temperature. In this letter, using angle-resolved photoemission spectroscopy, we unambiguously demonstrate that the 1$T$-TiSe$_2$ normal state is semimetalli…
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The semimetallic or semiconducting nature of the transition metal dichalcogenide 1$T$-TiSe$_2$ remains under debate after many decades mainly due to the fluctuating nature of its 2 $\times$ 2 $\times$ 2 charge-density-wave (CDW) phase at room-temperature. In this letter, using angle-resolved photoemission spectroscopy, we unambiguously demonstrate that the 1$T$-TiSe$_2$ normal state is semimetallic with an electron-hole band overlap of $\sim$110 meV by probing the low-energy electronic states of the perturbed CDW phase strongly doped by alkali atoms. Our study not only closes a long-standing debate but also supports the central role of the Fermi surface for driving the CDW and superconducting instabilities in 1$T$-TiSe$_2$.
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Submitted 14 November, 2019;
originally announced November 2019.
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Semimetal-to-semiconductor transition and charge-density-wave melting in $1T$-TiSe$_{2-x}$S$_x$ single crystals
Authors:
M. -L. Mottas,
T. Jaouen,
B. Hildebrand,
M. Rumo,
F. Vanini,
E. Razzoli,
E. Giannini,
C. Barreteau,
D. R. Bowler,
C. Monney,
H. Beck,
P. Aebi
Abstract:
The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology,…
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The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology, remains elusive. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations, we investigate $1T$-TiSe$_{2-x}$S$_x$ single crystals. Using STM, we first show that the long-range phase coherent CDW state is stable against S substitutions with concentrations at least up to $x=0.34$. The ARPES measurements then reveal a slow but continuous decrease of the overlap between the electron and hole ($e$-$h$) bands of the semimetallic normal-state well reproduced by DFT and related to slight reductions of both the CDW order parameter and $T_c$. Our DFT calculations further predict a semimetal-to-semiconductor transition of the normal state at a higher critical S concentration of $x_c$=0.9 $\pm$0.1, that coincides with a melted CDW state in TiSeS as measured with STM. Finally, we rationalize the $x$-dependence of the $e$-$h$ band overlap in terms of isovalent substitution-induced competing chemical pressure and charge localization effects. Our study highlights the key role of the $e$-$h$ band overlap for the CDW instability.
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Submitted 5 December, 2018;
originally announced December 2018.
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Phase Separation in the Vicinity of Fermi Surface Hot Spots
Authors:
T. Jaouen,
B. Hildebrand,
M. -L. Mottas,
M. Di Giovannantonio,
P. Ruffieux,
M. Rumo,
C. W. Nicholson,
E. Razzoli,
C. Barreteau,
A. Ubaldini,
E. Giannini,
F. Vanini,
H. Beck,
C. Monney,
P. Aebi
Abstract:
Spatially inhomogeneous electronic states are expected to be key ingredients for the emergence of superconducting phases in quantum materials hosting charge-density-waves (CDWs). Prototypical materials are transition-metal dichalcogenides (TMDCs) and among them, 1$T$-TiSe$_2$ exhibiting intertwined CDW and superconducting states under Cu intercalation, pressure or electrical gating. Although it ha…
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Spatially inhomogeneous electronic states are expected to be key ingredients for the emergence of superconducting phases in quantum materials hosting charge-density-waves (CDWs). Prototypical materials are transition-metal dichalcogenides (TMDCs) and among them, 1$T$-TiSe$_2$ exhibiting intertwined CDW and superconducting states under Cu intercalation, pressure or electrical gating. Although it has been recently proposed that the emergence of superconductivity relates to CDW fluctuations and the development of spatial inhomogeneities in the CDW order, the fundamental mechanism underlying such a phase separation (PS) is still missing. Using angle-resolved photoemission spectroscopy and variable-temperature scanning tunneling microscopy, we report on the phase diagram of the CDW in 1$T$-TiSe$_2$ as a function of Ti self-doping, an overlooked degree of freedom inducing CDW texturing. We find an intrinsic tendency towards electronic PS in the vicinity of Fermi surface (FS) "hot spots", i.e. locations with band crossings close to, but not at the Fermi level. We therefore demonstrate an intimate relationship between the FS topology and the emergence of spatially textured electronic phases which is expected to be generalizable to many doped CDW compounds.
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Submitted 10 May, 2019; v1 submitted 3 December, 2018;
originally announced December 2018.
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Local Real-Space View of the Achiral 1$T$-TiSe$_2$ 2 $\times$ 2 $\times$ 2 Charge Density Wave
Authors:
B. Hildebrand,
T. Jaouen,
M. -L. Mottas,
G. Monney,
C. Barreteau,
E. Giannini,
D. R. Bowler,
P. Aebi
Abstract:
The transition metal dichalcogenide 1$T$-TiSe$_2$ is a quasi-two-dimensional layered material undergoing a commensurate 2 $\times$ 2 $\times$ 2 charge density wave (CDW) transition with a weak periodic lattice distortion (PLD) below $\approx$ 200 K. Scanning tunneling microscopy (STM) combined with intentionally introduced interstitial Ti atoms allows to go beyond the usual spatial resolution of S…
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The transition metal dichalcogenide 1$T$-TiSe$_2$ is a quasi-two-dimensional layered material undergoing a commensurate 2 $\times$ 2 $\times$ 2 charge density wave (CDW) transition with a weak periodic lattice distortion (PLD) below $\approx$ 200 K. Scanning tunneling microscopy (STM) combined with intentionally introduced interstitial Ti atoms allows to go beyond the usual spatial resolution of STM and to intimately probe the three-dimensional character of the PLD. Furthermore, the inversion-symmetric, achiral nature of the CDW in the $z$-direction is revealed, contradicting the claimed existence of helical CDW stacking and associated chiral order. This study paves the way to a simultaneous real-space probing of both charge and structural reconstructions in CDW compounds.
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Submitted 10 April, 2018; v1 submitted 25 October, 2017;
originally announced October 2017.
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Selective probing of hidden spin-polarized states in inversion-symmetric bulk MoS2
Authors:
E. Razzoli,
T. Jaouen,
M. -L. Mottas,
B. Hildebrand,
G. Monney,
A. Pisoni,
S. Muff,
M. Fanciulli,
N. C. Plumb,
V. A. Rogalev,
V. N. Strocov,
J. Mesot,
M. Shi,
J. H. Dil,
H. Beck,
P. Aebi
Abstract:
Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer…
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Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer-locked spin-polarized electronic states can be selectively addressed by circularly-polarized light, therefore providing a novel route to probe these hidden spin-polarized states in inversion-symmetric systems as predicted by Zhang et al. [Nature Physics 10, 387 (2014)].
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Submitted 24 January, 2017;
originally announced January 2017.
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Local resilience of the $1T$-TiSe$_2$ charge density wave to Ti self-doping
Authors:
B. Hildebrand,
T. Jaouen,
C. Didiot,
E. Razzoli,
G. Monney,
M. -L. Mottas,
F. Vanini,
C. Barreteau,
A. Ubaldini,
E. Giannini,
H. Berger,
D. R. Bowler,
P. Aebi
Abstract:
In Ti-intercalated self-doped $1T$-TiSe$_2$ crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti doping dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW g…
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In Ti-intercalated self-doped $1T$-TiSe$_2$ crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti doping dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW gap. Supported by density functional theory, we demonstrate that the loss of the longrange phase coherence introduces an imbalance in the intercalated-Ti site distribution and restrains the CDW gap closure. This local resilient behavior of the $1T$-TiSe$_2$ CDW reveals a novel mechanism between CDW and defects in mutual influence.
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Submitted 14 September, 2016;
originally announced September 2016.
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Short-range phase coherence and origin of the 1T-TiSe2 charge density wave
Authors:
B. Hildebrand,
T. Jaouen,
C. Didiot,
E. Razzoli,
G. Monney,
M. -L. Mottas,
A. Ubaldini,
H. Berger,
C. Barreteau,
H. Beck,
D. R. Bowler,
P. Aebi
Abstract:
The impact of variable Ti self-doping on the 1T-TiSe2 charge density wave (CDW) is studied by scanning tunneling microscopy. Supported by density functional theory we show that agglomeration of intercalated-Ti atoms acts as preferential nucleation centers for the CDW that breaks up in phaseshifted CDW domains whose size directly depends on the intercalated-Ti concentration and which are separated…
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The impact of variable Ti self-doping on the 1T-TiSe2 charge density wave (CDW) is studied by scanning tunneling microscopy. Supported by density functional theory we show that agglomeration of intercalated-Ti atoms acts as preferential nucleation centers for the CDW that breaks up in phaseshifted CDW domains whose size directly depends on the intercalated-Ti concentration and which are separated by atomically-sharp phase boundaries. The close relationship between the diminution of the CDW domain size and the disappearance of the anomalous peak in the temperature dependent resistivity allows to draw a coherent picture of the 1T-TiSe2 CDW phase transition and its relation to excitons.
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Submitted 16 February, 2016;
originally announced February 2016.
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Impact of Electron-Hole Correlations on the 1T-TiSe2 Electronic Structure
Authors:
G. Monney,
C. Monney,
B. Hildebrand,
P. Aebi,
H. Beck
Abstract:
Several experiments have been performed on 1T-TiSe2 in order to identify whether the electronic structure is semimetallic or semiconducting without reaching a consensus. In this paper, we theoretically study the impact of electron-hole and electron-phonon correlations on the bare semimetallic and semiconducting electronic structure. The resulting electron spectral functions provide a direct compar…
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Several experiments have been performed on 1T-TiSe2 in order to identify whether the electronic structure is semimetallic or semiconducting without reaching a consensus. In this paper, we theoretically study the impact of electron-hole and electron-phonon correlations on the bare semimetallic and semiconducting electronic structure. The resulting electron spectral functions provide a direct comparison of both cases and demonstrate that 1T-TiSe2 is of predominant semiconducting character with some spectral weight crossing the Fermi level.
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Submitted 25 February, 2015;
originally announced February 2015.
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STM microscopy of the CDW in 1T-TiSe2 in the presence of single atom defects
Authors:
A. M. Novello,
B. Hildebrand,
A. Scarfato,
C. Didiot,
G. Monney,
A. Ubaldini,
H. Berger,
D. R. Bowler,
P. Aebi,
Ch. Renner
Abstract:
We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic an…
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We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic analysis of STM micrographs combined with density functional theory modelling of atomic defect patterns indicate that the observed CDW modulation lies in the Se surface layer. The defect patterns clearly show there are no 2$H$-polytype inclusions in the CDW phase, as previously found at room temperature [Titov A.N. et al, Phys. Sol. State 53, 1073 (2011). They further provide an alternative explanation for the chiral Friedel oscillations recently reported in this compound [J. Ishioka et al., Phys. Rev. B 84, 245125, (2011)].
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Submitted 19 July, 2015; v1 submitted 22 February, 2015;
originally announced February 2015.
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Excited States at Interfaces of a Metal-Supported Ultrathin Oxide Film
Authors:
T. Jaouen,
E. Razzoli,
C. Didiot,
G. Monney,
B. Hildebrand,
F. Vanini,
M. Muntwiler,
P. Aebi
Abstract:
We report layer-resolved measurements of the \textit{unoccupied} electronic structure of ultrathin MgO films grown on Ag(001). The metal-induced gap states at the metal/oxide interface, the oxide band gap as well as a surface core exciton involving an image-potential state of the vacuum are revealed through resonant Auger spectroscopy of the Mg $KL_{23}L_{23}$ Auger transition. Our results demonst…
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We report layer-resolved measurements of the \textit{unoccupied} electronic structure of ultrathin MgO films grown on Ag(001). The metal-induced gap states at the metal/oxide interface, the oxide band gap as well as a surface core exciton involving an image-potential state of the vacuum are revealed through resonant Auger spectroscopy of the Mg $KL_{23}L_{23}$ Auger transition. Our results demonstrate how to obtain new insights on \textit{empty} states at interfaces of metal-supported ultrathin oxide films.
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Submitted 27 April, 2015; v1 submitted 11 February, 2015;
originally announced February 2015.
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Doping nature of native defects in 1T-TiSe2
Authors:
B. Hildebrand,
C. Didiot,
A. M. Novello,
G. Monney,
A. Scarfato,
A. Ubaldini,
H. Berger,
D. R. Bowler,
C. Renner,
P. Aebi
Abstract:
The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native…
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The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies and Se substitutions by residual iodine and oxygen.
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Submitted 2 May, 2014; v1 submitted 28 March, 2014;
originally announced March 2014.
