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Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound
Authors:
E. Longo,
A. Markou,
C. Felser,
M. Belli,
A. Serafini,
P. Targa,
D. Codegoni,
M. Fanciulli,
R. Mantovan
Abstract:
Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compou…
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Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of magnetization in energy-efficient spintronic devices. In this work, we report the spin-to-charge conversion in sputtered ultrathin films of the half-Heusler compound MnPtSb with thickness (t) in the range from 1 to 6 nm. A combination of X-ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non-centrosymmetric MnPtSb films, with a clear (111)-orientation obtained on top of (0001) single-crystal sapphire substrates. The study of the thickness (t)-dependent magnetization dynamics of the MnPtSb(t)/Co(5nm)/Au(5nm) heterostructure revealed that the MnPtSb compound can be used as an efficient spin current generator, even at film thicknesses as low as 1 nm. By making use of spin pumping FMR, we measure a remarkable t-dependent spin-charge conversion in the MnPtSb layers, which clearly demonstrate the interfacial origin of the conversion. When interpreted as arising from the inverse Edelstein effect (IEE), the spin-charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches λIEE~3 nm, representing an extremely high spin-charge conversion efficiency at room temperature. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discover of their outstanding functionality are two ingredients which demonstrate the potentiality of such materials for future applications in spintronics.
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Submitted 26 July, 2023;
originally announced July 2023.
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Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion
Authors:
E. Longo,
L. Locatelli,
P. Tsipas,
A. Lintzeris,
A. Dimoulas,
M. Fanciulli,
M. Longo,
R. Mantovan
Abstract:
Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (…
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Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. In order to exploit such ideal topologically-protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and spin-charge conversion (SCC) is probed by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature, which is interpreted within the inverse Edelstein effect (IEE), thus resulting in a conversion efficiency lambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.
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Submitted 21 April, 2023;
originally announced April 2023.
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Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
Authors:
Emanuele Longo,
Matteo Belli,
Mario Alia,
Martino Rimoldi,
Raimondo Cecchini,
Massimo Longo,
Claudia Wiemer,
Lorenzo Locatelli,
Gianluca Gubbiotti,
Marco Fanciulli,
Roberto Mantovan
Abstract:
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2T…
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Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.
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Submitted 16 April, 2021;
originally announced April 2021.
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Comparative study on magnetoresistance of carbon-cobalt nanocomposite thin films grown by pulsed laser deposition
Authors:
S. Sergeenkov,
C. Cordova,
L. Cichetto Jr,
O. F. de Lima,
E. Longo,
F. M. Araujo-Moreira,
C. Furtado
Abstract:
We present a comparative study on the influence of applied magnetic field on the resistance of $C_{1-x}Co_x$ thin films (with $x=0.1$, $0.15$ and $0.2$) grown on $Si$ substrate by pulsed laser deposition technique. It is found that the behavior of magnetoresistance (MR) drastically depends on the temperature. Namely, at low temperatures MR is positive and its behavior is governed by the field medi…
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We present a comparative study on the influence of applied magnetic field on the resistance of $C_{1-x}Co_x$ thin films (with $x=0.1$, $0.15$ and $0.2$) grown on $Si$ substrate by pulsed laser deposition technique. It is found that the behavior of magnetoresistance (MR) drastically depends on the temperature. Namely, at low temperatures MR is positive and its behavior is governed by the field mediated weak localization scenario. While at high temperatures MR turns negative and its behavior is dominated by electron scattering on ferromagnetic cobalt atoms.
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Submitted 6 March, 2018;
originally announced March 2018.
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Influence of substrate on structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition
Authors:
L. Cichetto Jr,
S. Sergeenkov,
J. C. C. A. Diaz,
E. Longo,
F. M. Araujo-Moreira
Abstract:
We report the structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition technique. To understand the effects of film thickness, lattice mismatch and grain size on transport properties, various oriented substrates were used for deposition, including single-crystalline SrLaAlO4 (001), SrTiO3 (100) and LaAlO3 (100). To achieve a high quality LaNiO3 thin films, the v…
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We report the structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition technique. To understand the effects of film thickness, lattice mismatch and grain size on transport properties, various oriented substrates were used for deposition, including single-crystalline SrLaAlO4 (001), SrTiO3 (100) and LaAlO3 (100). To achieve a high quality LaNiO3 thin films, the vital parameters (such as laser fluence, substrate temperature, oxygen pressure, and deposition time) were optimized. The best quality films are found to be well textured samples with good crystalline properties.
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Submitted 28 August, 2017;
originally announced August 2017.
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Scaling like behaviour of resistivity observed in LaNiO_3 thin films grown on SrTiO_3 substrate by pulsed laser deposition
Authors:
S Sergeenkov,
L Cichetto Jr,
M Zampieri,
E Longo,
F M Araujo-Moreira
Abstract:
We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve [T/T_{sf}(d)]^{3/2} for the entire temperature interval (20K<T<300K) with T_{sf}(d) being the onset temperature for triggeri…
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We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve [T/T_{sf}(d)]^{3/2} for the entire temperature interval (20K<T<300K) with T_{sf}(d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaNiO_3/SrTiO_3 heterostructure.
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Submitted 29 December, 2015;
originally announced December 2015.
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Evidence for resonant scattering of electrons by spin fluctuations in $LaNiO_3/LaAlO_3$ heterostructures grown by pulsed laser deposition
Authors:
S. Sergeenkov,
L. Cichetto, Jr.,
E. Longo,
F. M. Araujo-Moreira
Abstract:
We present measurements of resistivity $ρ$ in highly oriented $LaNiO_3$ films grown on $LaAlO_3$ substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal $ρ(T) \propto T^{3/2}$ dependence for the entire temperature interval ($20K<T<300K$). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluct…
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We present measurements of resistivity $ρ$ in highly oriented $LaNiO_3$ films grown on $LaAlO_3$ substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal $ρ(T) \propto T^{3/2}$ dependence for the entire temperature interval ($20K<T<300K$). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy $\hbar ω_{sf}\simeq 2.1meV$) triggered by spin-density wave propagating through the interface boundary of $LaNiO_3/LaAlO_3$ sandwich.
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Submitted 17 August, 2015;
originally announced August 2015.
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Magnetic dynamics of single domain Ni nanoparticles
Authors:
G. F. Goya,
F. C. Fonseca,
R. F. Jardim,
R. Muccillo,
N. L. V. Carreño,
E. Longo,
E. R. Leite
Abstract:
The dynamic magnetic properties of Ni nanoparticles diluted in an amorphous SiO2 matrix prepared from a modified sol-gel method have been studied by the frequency f dependence of the ac magnetic susceptibility \c{hi}(T). For samples with similar average radii ~ 3-4 nm, an increase of the blocking temperature from TB ~ 20 to ~ 40 K was observed for Ni concentrations of ~ 1.5 and 5 wt.%, respectivel…
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The dynamic magnetic properties of Ni nanoparticles diluted in an amorphous SiO2 matrix prepared from a modified sol-gel method have been studied by the frequency f dependence of the ac magnetic susceptibility \c{hi}(T). For samples with similar average radii ~ 3-4 nm, an increase of the blocking temperature from TB ~ 20 to ~ 40 K was observed for Ni concentrations of ~ 1.5 and 5 wt.%, respectively, assigned to the effects of dipolar interactions. Both the in-phase \c{hi}'(T) and the out-of-phase \c{hi}"(T) maxima follow the predictions of the thermally activated Néel-Arrhenius model. The effective magnetic anisotropy constant Keff inferred from \c{hi}"(T) versus f data for the 1.5 wt.% Ni sample is close to the value of the magnetocrystalline anisotropy of bulk Ni, suggesting that surface effects are negligible in the present samples. In addition, the contribution from dipolar interactions to the total anisotropy energy Ea in specimens with 5 wt.% Ni was found to be comparable to the intrinsic magnetocrystalline anisotropy barrier.
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Submitted 19 March, 2011;
originally announced March 2011.
