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Sonication-assisted liquid phase exfoliation of two-dimensional CrTe$_3$ under inert conditions
Authors:
Kevin Synnatschke,
Narine Moses Badlyan,
Angelika Wrzesińska,
Guillermo Lozano Onrubia,
Anna-Lena Hansen,
Stefan Wolff,
Hans Tornatzky,
Wolfgang Bensch,
Yana Vaynzof,
Janina Maultzsch,
Claudia Backes
Abstract:
Liquid phase exfoliation (LPE) has been used for the successful fabrication of nanosheets from a large number of van der Waals materials. While this allows to study fundamental changes of material properties' associated with reduced dimensions, it also changes the chemistry of many materials due to a significant increase of the effective surface area, often accompanied with enhanced reactivity and…
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Liquid phase exfoliation (LPE) has been used for the successful fabrication of nanosheets from a large number of van der Waals materials. While this allows to study fundamental changes of material properties' associated with reduced dimensions, it also changes the chemistry of many materials due to a significant increase of the effective surface area, often accompanied with enhanced reactivity and accelerated oxidation. To prevent material decomposition, LPE and processing in inert atmosphere have been developed, which enables the preparation of pristine nanomaterials, and to systematically study compositional changes over time for different storage conditions. Here, we demonstrate the inert exfoliation of the oxidation-sensitive van der Waals crystal, CrTe$_3$. The pristine nanomaterial was purified and size-selected by centrifugation, nanosheet dimensions in the fractions quantified by atomic force microscopy and studied by Raman, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and photo spectroscopic measurements. We find a dependence of the relative intensities of the CrTe$_3$ Raman modes on the propagation direction of the incident light, which prevents a correlation of the Raman spectral profile to the nanosheet dimensions. XPS and EDX reveal that the contribution of surface oxides to the spectra is reduced after exfoliation compared to the bulk material. Further, the decomposition mechanism of the nanosheets was studied by time-dependent extinction measurements after water titration experiments to initially dry solvents, which suggest that water plays a significant role in the material decomposition.
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Submitted 17 April, 2024;
originally announced April 2024.
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In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Authors:
Wenshan Chen,
Kingsley Egbo,
Hans Tornatzky,
Manfred Ramsteiner,
Markus R. Wagner,
Oliver Bierwagen
Abstract:
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is a well-suited thin film growth technique. In this study, we investigate the reaction kinetics of GeO…
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Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is a well-suited thin film growth technique. In this study, we investigate the reaction kinetics of GeO2 during plasma-assisted MBE using elemental Ge and plasma-activated oxygen fluxes. The growth rate as a function of oxygen flux is measured in-situ by laser reflectometry at different growth temperatures. A flux of the suboxide GeO desorbing off the growth surface is identified and quantified in-situ by the line-of-sight quadrupole mass spectrometry. Our measurements reveal that the suboxide formation and desorption limits the growth rate under metal-rich or high temperature growth conditions, and leads to etching of the grown GeO2 layer under Ge flux in the absence of oxygen. The quantitative results fit the sub-compound mediated reaction model, indicating the intermediate formation of the suboxide at the growth front. This model is further utilized to delineate the GeO2-growth window in terms of oxygen-flux and substrate temperature. Our study can serve as a guidance for the thin film synthesis of GeO2 and defect-free mesa etching in future GeO2-device processing.
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Submitted 27 April, 2023; v1 submitted 21 April, 2023;
originally announced April 2023.
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Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
Authors:
H. Tornatzky,
C. Robert,
P. Renucci,
B. Han,
T. Blon,
B. Lassagne,
G. Ballon,
Y. Lu,
K. Watanabe,
T. Taniguchi,
B. Urbaszek,
J. M. J. Lopes,
X. Marie
Abstract:
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni i…
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We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature.
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Submitted 25 October, 2021;
originally announced October 2021.
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Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Authors:
Ziqi Zhou,
Paul Marcon,
Xavier Devaux,
Philippe Pigeat,
Alexandre Bouché,
Sylvie Migot,
Abdallah Jaafar,
Remi Arras,
Michel Vergnat,
Lei Ren,
Hans Tornatzky,
Cedric Robert,
Xavier Marie,
Jean-Marie George,
Henri-Yves Jaffrès,
Mathieu Stoffel,
Hervé Rinnert,
Zhongming Wei,
Pierre Renucci,
Lionel Calmels,
Yuan Lu
Abstract:
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy…
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Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials.
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Submitted 18 June, 2021;
originally announced June 2021.
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Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers
Authors:
Cedric Robert,
Sangjun Park,
Fabian Cadiz,
Laurent Lombez,
Lei Ren,
Hans Tornatzky,
Alistair Rowe,
Daniel Paget,
Fausto Sirotti,
Min Yang,
Dinh Van Tuan,
Takashi Taniguchi,
Bernhard Urbaszek,
Kenji Watanabe,
Thierry Amand,
Hanan Dery,
Xavier Marie
Abstract:
Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pumping of resident electrons in n-doped WSe2 and WS2 monola…
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Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pumping of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate doping and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light.
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Submitted 11 May, 2021;
originally announced May 2021.
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Isotopic study of Raman active phonon modes in $β$-Ga$_{2}$O$_{3}$
Authors:
Benjamin M. Janzen,
Piero Mazzolini,
Roland Gillen,
Andreas Falkenstein,
Manfred Martin,
Hans Tornatzky,
Oliver Bierwagen,
Markus R. Wagner
Abstract:
Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $β$-Ga$_{2}$O$_{3}$ provides insights into fundamental material properties such as crystal structure and orientation and can contribute to the identification of dopants and point defects. We investigate…
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Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $β$-Ga$_{2}$O$_{3}$ provides insights into fundamental material properties such as crystal structure and orientation and can contribute to the identification of dopants and point defects. We investigate the Raman active phonon modes of $β$-Ga$_{2}$O$_{3}$ in two different oxygen isotope compositions ($^{16}$O,$^{18}$O) by experiment and theory: By carrying out polarized micro-Raman spectroscopy measurements on the (010) and ($\bar{2}$01) planes, we determine the frequencies of all 15 Raman active phonons for both isotopologues. The measured frequencies are compared with the results of density functional perturbation theory (DFPT) calculations. In both cases, we observe a shift of Raman frequencies towards lower energies upon substitution of $^{16}$O with $^{18}$O. By quantifying the relative frequency shifts of the individual Raman modes, we identify the atomistic origin of all modes (Ga-Ga, Ga-O or O-O) and present the first experimental confirmation of the theoretically calculated energy contributions of O lattice sites to Raman modes. We find that oxygen substitution on the O$_{\mathrm{II}}$ site leads to an elevated relative frequency shift compared to O$_{\mathrm{I}}$ and O$_{\mathrm{III}}$ sites. This study presents a blueprint for the future identification of different point defects in Ga$_{2}$O$_{3}$ by Raman spectroscopy.
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Submitted 7 September, 2020; v1 submitted 17 August, 2020;
originally announced August 2020.
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Phonon dispersion of MoS$_2$
Authors:
Hans Tornatzky,
Roland Gillen,
Hiroshi Uchiyama,
Janina Maultzsch
Abstract:
Transition metal dichalcogenides like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$ have attracted enormous interest during recent years. They are van-der-Waals crystals with highly anisotropic properties, which allows exfoliation of individual layers. Their remarkable physical properties make them promising for applications in optoelectronic, spintronic, and valleytronic devices. Phonons are fundamental…
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Transition metal dichalcogenides like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$ have attracted enormous interest during recent years. They are van-der-Waals crystals with highly anisotropic properties, which allows exfoliation of individual layers. Their remarkable physical properties make them promising for applications in optoelectronic, spintronic, and valleytronic devices. Phonons are fundamental to many of the underlying physical processes, like carrier and spin relaxation or exciton dynamics. However, experimental data of the complete phonon dispersion relations in these materials is missing. Here we present the phonon dispersion of bulk MoS$_2$ in the high-symmetry directions of the Brillouin zone, determined by inelastic X-ray scattering. Our results underline the two-dimensional nature of MoS$_2$. Supported by first-principles calculations, we determine the phonon displacement patterns, symmetry properties, and scattering intensities. The results will be the basis for future experimental and theoretical work regarding electron-phonon interactions, intervalley scattering, as well as phonons in related 2D materials.
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Submitted 10 September, 2018;
originally announced September 2018.