Showing 1–50 of 58 results for author: Han, B

Structural Constraint Integration in Generative Model for Discovery of Quantum Material Candidates

Authors: Ryotaro Okabe, Mouyang Cheng, Abhijatmedhi Chotrattanapituk, Nguyen Tuan Hung, Xiang Fu, Bowen Han, Yao Wang, Weiwei Xie, Robert J. Cava, Tommi S. Jaakkola, Yongqiang Cheng, Mingda Li

Abstract: Billions of organic molecules are known, but only a tiny fraction of the functional inorganic materials have been discovered, a particularly relevant problem to the community searching for new quantum materials. Recent advancements in machine-learning-based generative models, particularly diffusion models, show great promise for generating new, stable materials. However, integrating geometric patt… ▽ More Billions of organic molecules are known, but only a tiny fraction of the functional inorganic materials have been discovered, a particularly relevant problem to the community searching for new quantum materials. Recent advancements in machine-learning-based generative models, particularly diffusion models, show great promise for generating new, stable materials. However, integrating geometric patterns into materials generation remains a challenge. Here, we introduce Structural Constraint Integration in the GENerative model (SCIGEN). Our approach can modify any trained generative diffusion model by strategic masking of the denoised structure with a diffused constrained structure prior to each diffusion step to steer the generation toward constrained outputs. Furthermore, we mathematically prove that SCIGEN effectively performs conditional sampling from the original distribution, which is crucial for generating stable constrained materials. We generate eight million compounds using Archimedean lattices as prototype constraints, with over 10% surviving a multi-staged stability pre-screening. High-throughput density functional theory (DFT) on 26,000 survived compounds shows that over 50% passed structural optimization at the DFT level. Since the properties of quantum materials are closely related to geometric patterns, our results indicate that SCIGEN provides a general framework for generating quantum materials candidates. △ Less

Submitted 5 July, 2024; originally announced July 2024.

Comments: 512 pages total, 4 main figures + 218 supplementary figures

Correlated magnetism of moiré exciton-polaritons on a triangular electron-spin lattice

Authors: Johannes Scherzer, Lukas Lackner, Bo Han, Borislav Polovnikov, Lukas Husel, Jonas Göser, Zhijie Li, Jens-Christian Drawer, Martin Esmann, Christoph Bennenhei, Falk Eilenberger, Kenji Watanabe, Takashi Taniguchi, Anvar S. Baimuratov, Christian Schneider, Alexander Högele

Abstract: We demonstrate evidence of correlated magnetism for exciton-polaritons in a MoSe$_{2}$/WS$_{2}$ moiré heterostructure with near-parallel alignment subject to electron doping. In our experiments, interactions between electrons and moiré excitons are controlled electrostatically by field-effect doping, and the polaritonic regime of strong light-matter coupling is established in an open cryogenic mic… ▽ More We demonstrate evidence of correlated magnetism for exciton-polaritons in a MoSe$_{2}$/WS$_{2}$ moiré heterostructure with near-parallel alignment subject to electron doping. In our experiments, interactions between electrons and moiré excitons are controlled electrostatically by field-effect doping, and the polaritonic regime of strong light-matter coupling is established in an open cryogenic microcavity. Remarkably, at filling fractions around one electron per moiré cell, we observe drastic and nonlinear enhancement of the effective polariton Landé factor as a hallmark of correlated magnetism, which is cavity-controlled via resonance tuning of light and matter polariton constituents. Our work establishes moiré van der Waals heterostructures as an outstanding platform for studies of correlated phenomena in the presence of strong light-matter coupling and many-body phases of lattice-ordered excitons, charges and spins. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Robust teleportation of a surface code and cascade of topological quantum phase transitions

Authors: Finn Eckstein, Bo Han, Simon Trebst, Guo-Yi Zhu

Abstract: Teleportation is a facet where quantum measurements can act as a powerful resource in quantum physics, as local measurements allow to steer quantum information in a non-local way. While this has long been established for a single Bell pair, the teleportation of a fault-tolerant logical qubit presents a fundamentally different challenge as it requires the teleportation of a many-qubit state. Here w… ▽ More Teleportation is a facet where quantum measurements can act as a powerful resource in quantum physics, as local measurements allow to steer quantum information in a non-local way. While this has long been established for a single Bell pair, the teleportation of a fault-tolerant logical qubit presents a fundamentally different challenge as it requires the teleportation of a many-qubit state. Here we investigate a tangible protocol for teleporting a long-range entangled surface code state using elementary Bell measurements and its stability in the presence of tunable coherent errors. We relate the underlying threshold problem to the physics of anyon condensation under weak measurements and map it to a variant of the Ashkin-Teller model of statistical mechanics with Nishimori type disorder, which gives rise to a cascade of phase transitions. Tuning the angle of the local Bell measurements, we find a continuously varying threshold. Notably, the threshold moves to infinity for the $X+Z$ angle along the self-dual line -- indicating an optimal protocol that is fault-tolerant even in the presence of coherent noise. Our teleportation protocol, which can be readily implemented in dynamically configurable Rydberg atom arrays, thereby gives guidance for a practical demonstration of the power of quantum measurements. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Comments: 5 + 4 pages; 3 + 4 figures

Revealing dark exciton signatures in polariton spectra of 2D materials

Authors: Beatriz Ferreira, Hangyong Shan, Roberto Rosati, Jamie M. Fitzgerald, Lukas Lackner, Bo Han, Martin Esmann, Patrick Hays, Gilbert Liebling, Kenji Watanabe, Takashi Taniguchi, Falk Eilenberger, Sefaattin Tongay, Christian Schneider, Ermin Malic

Abstract: Dark excitons in transition metal dichalcogenides (TMD) have been so far neglected in the context of polariton physics due to their lack of oscillator strength. However, in tungsten-based TMDs, dark excitons are known to be the energetically lowest states and could thus provide important scattering partners for polaritons. In this joint theory-experiment work, we investigate the impact of the full… ▽ More Dark excitons in transition metal dichalcogenides (TMD) have been so far neglected in the context of polariton physics due to their lack of oscillator strength. However, in tungsten-based TMDs, dark excitons are known to be the energetically lowest states and could thus provide important scattering partners for polaritons. In this joint theory-experiment work, we investigate the impact of the full exciton energy landscape on polariton absorption and reflectance. By changing the cavity detuning, we vary the polariton energy relative to the unaffected dark excitons in such a way that we open or close specific phonon-driven scattering channels. We demonstrate both in theory and experiment that this controlled switching of scattering channels manifests in characteristic sharp changes in optical spectra of polaritons. These spectral features can be exploited to extract the position of dark excitons. Our work suggests new possibilities for exploiting polaritons for fingerprinting nanomaterials via their unique exciton landscape. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Authors: Ryosuke Shimizu, Diyi Cheng, Guomin Zhu, Bing Han, Thomas S. Marchese, Randall Burger, Mingjie Xu, Xiaoqing Pan, Minghao Zhang, Ying Shirley Meng

Abstract: Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compos… ▽ More Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices. △ Less

Submitted 30 September, 2023; originally announced October 2023.

Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film

Authors: Xiaowen Zhang, Tiequan Xu, Ruochen Shi, Bo Han, Fachen Liu, Zhetong Liu, Xiaoyue Gao, Jinlong Du, Yue Wang, Peng Gao

Abstract: In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show MgB$_2$-E2g mode splitting and softening near the MgB$_2$/MgO interface. Orbital-resolved core-level EELS link the phonon softening to in-plane boron-atom electro… ▽ More In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show MgB$_2$-E2g mode splitting and softening near the MgB$_2$/MgO interface. Orbital-resolved core-level EELS link the phonon softening to in-plane boron-atom electron states' changes. Ab initio calculations confirm this softening enhances electron-phonon coupling at the interface. Our findings highlight interface engineering's potential for superconductivity enhancement. △ Less

Submitted 28 September, 2023; originally announced September 2023.

Atomic-scale observation of localized phonons at FeSe/SrTiO3 interface

Authors: Ruochen Sh, Qize Li, Xiaofeng Xu, Bo Han, Ruixue Zhu, Fachen Liu, Ruishi Qi, Xiaowen Zhang, Jinlong Du, Ji Chen, Dapeng Yu, Xuetao Zhu, Jiandong Guo, Peng Gao

Abstract: In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. Indeed, the complicated atomic structure of the interface brin… ▽ More In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. Indeed, the complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge from either experiment or theory, thus hindering our understanding of the enhancement mechanism. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO3 interface with atomically resolved imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O termination at the interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. The electron-phonon coupling strength for such a localized interface phonon with short-range interactions is comparable to that of Fuchs-Kliewer (FK) phonon mode with long-rang interactions. Thus, our atomic-scale study provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO3 interface. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Journal ref: Nat Commun 15, 3418 (2024)

Controlling the 2D magnetism of CrBr$_3$ by van der Waals stacking engineering

Authors: Shiqi Yang, Xiaolong Xu, Bo Han, Pingfan Gu, Roger Guzman, Yiwen Song, Zhongchong Lin, Peng Gao, Wu Zhou, Jinbo Yang, Zuxin Chen, Yu Ye

Abstract: The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and prep… ▽ More The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr$_3$ via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr$_3$ flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Comments: 7 pages, 4 figures

In-situ spontaneous emission control of MoSe$_2$-WSe$_2$ interlayer excitons with near-unity quantum yield

Authors: Bo Han, Chirag Chandrakant Palekar, Sven Stephan, Frederik Lohof, Victor Nikolaevich Mitryakhin, Jens-Christian Drawer, Alexander Steinhoff, Lukas Lackner, Martin Silies, Bárbara Rosa, Martin Esmann, Falk Eilenberger, Christopher Gies, Stephan Reitzenstein, Christian Schneider

Abstract: Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open optical microcavity to gain insights into fundamental optical properties of the emergent interlayer charge-transfer excitons. First, we utilize an ultra-low qual… ▽ More Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solid-state nanostructures. Here, we study a MoSe$_2$-WSe$_2$ van-der-Waals heterostructure that is integrated in a widely tunable open optical microcavity to gain insights into fundamental optical properties of the emergent interlayer charge-transfer excitons. First, we utilize an ultra-low quality factor open planar vertical cavity and investigate the modification of the excitonic lifetime as on- and off-resonant conditions are met with consecutive longitudinal modes. Time-resolved photoluminescence measurements reveal that the interlayer exciton lifetime can thus be periodically tuned with an amplitude of 110 ps. The resulting oscillations of the interlayer exciton lifetime allows us to extract a 0.5 ns free-space radiative lifetime and a quantum efficiency as high as 81 \%. We subsequently engineer the local density of optical states by introducing a spatially confined and fully spectrally tunable Tamm-plasmon resonance. The dramatic redistribution of the local optical modes in this setting allows us to encounter a profound inhibition of spontaneous emission of the interlayer excitons by a factor of 3.2. We expect that specifically engineering the inhibition of radiation from moiré excitons is a powerful tool to steer their thermalization, and eventually their condensation into coherent condensate phases. △ Less

Submitted 20 December, 2023; v1 submitted 26 June, 2023; originally announced June 2023.

Comments: 31 pages, 9 figures, SPP 2244 (funding numbers: Schn1376 14.1, Re2974/26-1 and Gi1121/4-1)

Atom-by-atom design of metal oxide catalysts for the oxygen evolution reaction with machine learning

Authors: Jaclyn R. Lunger, Jessica Karaguesian, Hoje Chun, Jiayu Peng, Yitong Tseo, Chung Hsuan Shan, Byungchan Han, Yang Shao-Horn, Rafael Gomez-Bombarelli

Abstract: Green hydrogen production is crucial for a sustainable future, but current catalysts for the oxygen evolution reaction (OER) suffer from slow kinetics, despite many efforts to produce optimal designs, particularly through the calculation of descriptors for activity. In this study, we develop a dataset of density functional theory calculations of bulk and surface perovskite oxides, and adsorption e… ▽ More Green hydrogen production is crucial for a sustainable future, but current catalysts for the oxygen evolution reaction (OER) suffer from slow kinetics, despite many efforts to produce optimal designs, particularly through the calculation of descriptors for activity. In this study, we develop a dataset of density functional theory calculations of bulk and surface perovskite oxides, and adsorption energies of OER intermediates, which includes compositions up to quaternary and facets up to (555). We demonstrate that per-site properties of perovskite oxides such as Bader charge or band center can be tuned through element substitution and faceting, and develop a machine learning model that accurately predicts these properties directly from the local chemical environment. We leverage these per-site properties to identify promising perovskites with high theoretical OER activity. The identified design principles and promising new materials provide a roadmap for closing the gap between current artificial catalysts and biological enzymes. △ Less

Submitted 31 May, 2023; originally announced May 2023.

Elucidating the Role of Prelithiation in Si-based Anodes for Interface Stabilization

Authors: Shuang Bai, Wurigumula Bao, Kun Qian, Bing Han, Weikang Li, Baharak Sayahpour, Bhagath Screenarayanan, Darren H. S. Tan, So-yeon Ham, Ying Shirley Meng

Abstract: Prelithiation as a facile and effective method to compensate the lithium inventory loss in the initial cycle has progressed considerably both on anode and cathode sides. However, much less research has been devoted to the prelithiation effect on the interface stabilization for long-term cycling of Si-based anodes. An in-depth quantitative analysis of the interface that form during the prelithiatio… ▽ More Prelithiation as a facile and effective method to compensate the lithium inventory loss in the initial cycle has progressed considerably both on anode and cathode sides. However, much less research has been devoted to the prelithiation effect on the interface stabilization for long-term cycling of Si-based anodes. An in-depth quantitative analysis of the interface that form during the prelithiation of SiO$_x$ is presented here and the results are compared with prelithiaton of Si anodes. Local structure probe combined with detailed electrochemical analysis reveals that a characteristic mosaic interface is formed on both prelithiated SiO$_x$ and Si anodes. This mosaic interface containing multiple lithium silicates phases, is fundamentally different from the solid electrolyte interface (SEI) formed without prelithiation. The ideal conductivity and mechanical properties of lithium silicates enable improved cycling stability of both prelithiated anodes. With a higher ratio of lithium silicates due to the oxygen participation, prelithiated SiO$_{1.3}$ anode improves the initial coulombic efficiency to 94% in full cell and delivers good cycling retention after hundreds cycles under lean electrolyte conditions. The insights provided in this work could be used to further optimize high Si loading based anode in future high energy density batteries. △ Less

Submitted 13 April, 2023; originally announced April 2023.

Confined-state physics and signs of fermionization of moiré excitons in WSe$_2$/MoSe$_2$ heterobilayers

Authors: Frederik Lohof, Johannes Michl, Alexander Steinhoff, Bo Han, Martin von Helversen, Sefaattin Tongay, Kenji Watanabe, Takashi Taniguchi, Sven Höfling, Stephan Reitzenstein, Carlos Anton-Solanas, Christopher Gies, Christian Schneider

Abstract: We revisit and extend the standard bosonic interpretation of interlayer excitons in the moiré potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe$_2$/WSe$_2$ van der Waals bilayer heterostructure via density-dependent photoluminescence spectroscopy and reveal strongly developed, unconventional spectral shifts of the emergent m… ▽ More We revisit and extend the standard bosonic interpretation of interlayer excitons in the moiré potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe$_2$/WSe$_2$ van der Waals bilayer heterostructure via density-dependent photoluminescence spectroscopy and reveal strongly developed, unconventional spectral shifts of the emergent moiré exciton resonances. The observation of saturating blueshifts of successive exciton resonances allow us to explain their physics in terms of a model utilizing fermionic saturable absorbers. This approach is strongly inspired by established quantum-dot models, which underlines the close analogy of interlayer excitons trapped in pockets of the moiré potential, and quantum emitters with discrete eigenstates. △ Less

Submitted 15 May, 2023; v1 submitted 28 February, 2023; originally announced February 2023.

Ultra-bright single photon source based on an atomically thin material

Authors: Jens-Christian Drawer, Victor Nikolaevich Mitryakhin, Hangyong Shan, Sven Stephan, Moritz Gittinger, Lukas Lackner, Bo Han, Gilbert Leibeling, Falk Eilenberger, Rounak Banerjee, Sefaattin Tongay, Kenji Watanabe, Takashi Taniguchi, Christoph Lienau, Martin Silies, Carlos Anton-Solanas, Martin Esmann, Christian Schneider

Abstract: Solid-state single photon sources are central building blocks in quantum communication networks and on-chip quantum information processing. Atomically thin crystals were established as possible candidates to emit non-classical states of light, however, the performance of monolayer-based single photon sources has so far been lacking behind state-of-the-art devices based on volume crystals. Here, we… ▽ More Solid-state single photon sources are central building blocks in quantum communication networks and on-chip quantum information processing. Atomically thin crystals were established as possible candidates to emit non-classical states of light, however, the performance of monolayer-based single photon sources has so far been lacking behind state-of-the-art devices based on volume crystals. Here, we implement a single photon source based on an atomically thin sheet of WSe2 coupled to a spectrally tunable optical cavity. It is characterized by a high single photon purity with a $g^{(2)}(0)$ value as low as $4.7 \pm 0.7 \%$ and a record-high first lens brightness of linearly polarized photons as large as $65 \pm 4 \%$. Interestingly, the high performance of our devices allows us to observe genuine quantum interference phenomena in a Hong-Ou-Mandel experiment. Our results demonstrate that open cavities and two-dimensional materials constitute an excellent platform for ultra-bright quantum light sources: the unique properties of such two-dimensional materials and the versatility of open cavities open an inspiring avenue for novel quantum optoelectronic devices. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 12 pages, 7 figures

Anisotropic higher rank $\mathbb{Z}_N$ topological phases on graphs

Authors: Hiromi Ebisu, Bo Han

Abstract: We study unusual gapped topological phases where they admit $\mathbb{Z}_N$ fractional excitations in the same manner as topologically ordered phases, yet their ground state degeneracy depends on the local geometry of the system. Placing such phases on 2D lattice, composed of an arbitrary connected graph and 1D line, we find that the fusion rules of quasiparticle excitations are described by the La… ▽ More We study unusual gapped topological phases where they admit $\mathbb{Z}_N$ fractional excitations in the same manner as topologically ordered phases, yet their ground state degeneracy depends on the local geometry of the system. Placing such phases on 2D lattice, composed of an arbitrary connected graph and 1D line, we find that the fusion rules of quasiparticle excitations are described by the Laplacian of the graph and that the number of superselection sectors is related to the kernel of the Laplacian. Based on this analysis, we further show that the ground state degeneracy is given by $\bigl[N\times \prod_{i}\text{gcd}(N, p_i)\bigr]^2$, where $p_i$'s are invariant factors of the Laplacian that are greater than one and gcd stands for the greatest common divisor. We also discuss braiding statistics between quasiparticle excitations. △ Less

Submitted 1 January, 2023; v1 submitted 16 September, 2022; originally announced September 2022.

Comments: 31 pages, 7 figures

Journal ref: SciPost Phys. 14, 106 (2023)

Ultra-Low Temperature Li/CFx Batteries Enabled by Fast-transport and Anion-pairing Liquefied Gas Electrolytes

Authors: Yijie Yin, John Holoubek, Alex Liu, Baharak Sayahpour, Ganesh Raghavendran, Guorui Cai, Bing Han, Matthew Mayer, Noah B. Schorr, Timothy N. Lambert, Katharine L. Harrison, Weikang Li, Zheng Chen, Y. Shirley Meng

Abstract: Lithium fluorinated carbon is one of the most promising chemistries for high-energy-density primary energy storage systems in applications where rechargeability is not required. Though Li/CFx demonstrates high energy density under ambient conditions, achieving such a high energy density when exposed to subzero temperatures remains a challenge, particularly under high current density. Here, we repo… ▽ More Lithium fluorinated carbon is one of the most promising chemistries for high-energy-density primary energy storage systems in applications where rechargeability is not required. Though Li/CFx demonstrates high energy density under ambient conditions, achieving such a high energy density when exposed to subzero temperatures remains a challenge, particularly under high current density. Here, we report a liquefied gas electrolyte with an anion-pair solvation structure based on dimethyl ether with a low melting point and low viscosity, leading to high ionic conductivity between a wide temperature range. Besides that, through systematic X-ray photoelectron spectroscopy integrated with transmission electron microscopy characterizations, we evaluate the interface of CFx for low-temperature performance. We conclude that the fast transport and anion-pairing solvation structure of the electrolyte bring about reduced charge transfer resistance at low temperatures, which resulted in significantly enhanced performance of Li/CFx cells. Utilizing 50 mg/cm2 loading electrodes, the Li/CFx still displayed 1530 Wh/kg at reduced temperature. This work provides insights into the electrolyte design that may overcome the operational limits of batteries in extreme environments. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Freestanding LiPON: from Fundamental Study to Uniformly Dense Li Metal Deposition Under Zero External Pressure

Authors: Diyi Cheng, Thomas Wynn, Bingyu Lu, Maxwell Marple, Bing Han, Ryosuke Shimizu, Bhagath Sreenarayanan, Jeffery Bickel, Peter Hosemann, Yangyuchen Yang, Han Nguyen, Weikang Li, Guomin Zhu, Minghao Zhang, Ying Shirley Meng

Abstract: Lithium phosphorus oxynitride (LiPON) is a well-known amorphous thin film solid electrolyte that has been extensively studied in the last three decades. Despite the promises to pair with Li metal anode and various cathode materials, the presence of rigid substrate and LiPONs unique amorphous, air-sensitive nature set limitations to comprehensively understand its intrinsic properties for future dev… ▽ More Lithium phosphorus oxynitride (LiPON) is a well-known amorphous thin film solid electrolyte that has been extensively studied in the last three decades. Despite the promises to pair with Li metal anode and various cathode materials, the presence of rigid substrate and LiPONs unique amorphous, air-sensitive nature set limitations to comprehensively understand its intrinsic properties for future development and applications. This work demonstrates a methodology to synthesize LiPON in a freestanding form that exhibits remarkable flexibility and a Young s modulus of ~33 GPa. Solid-state nuclear magnetic resonance (ss-NMR) and differential scanning calorimetry (DSC) results with unprecedented high signal-to-noise ratio could be obtained with such freestanding LiPON (FS-LiPON), revealing the Li-LiPON interface bonding environments quantitatively and a well-defined glass transition temperature for LiPON. Combining interfacial stress and a seeding layer, FS-LiPON demonstrates a uniform and fully dense Li metal deposition without the aid of external pressure. Such a FS-LiPON film offers new opportunities for fundamental study of LiPON material and associated interfaces, and provides perspectives for interface engineering in bulk solid-state battery. △ Less

Submitted 11 April, 2023; v1 submitted 8 August, 2022; originally announced August 2022.

$\mathbb{Z}_2$ topologically ordered phases on a simple hyperbolic lattice

Authors: Hiromi Ebisu, Bo Han

Abstract: In this work, we consider 2D $\mathbb{Z}_2$ topologically ordered phases ($\mathbb{Z}_2$ toric code and the modified surface code) on a simple hyperbolic lattice. Introducing a 2D lattice consisting of the product of a 1D Cayley tree and a 1D conventional lattice, we investigate two topological quantities of the $\mathbb{Z}_2$ topologically ordered phases on this lattice: the ground state degenera… ▽ More In this work, we consider 2D $\mathbb{Z}_2$ topologically ordered phases ($\mathbb{Z}_2$ toric code and the modified surface code) on a simple hyperbolic lattice. Introducing a 2D lattice consisting of the product of a 1D Cayley tree and a 1D conventional lattice, we investigate two topological quantities of the $\mathbb{Z}_2$ topologically ordered phases on this lattice: the ground state degeneracy on a closed surface and the topological entanglement entropy. We find that both quantities depend on the number of branches and the generation of the Cayley tree. We attribute these results to a huge number of superselection sectors of anyons. △ Less

Submitted 16 December, 2022; v1 submitted 12 June, 2022; originally announced June 2022.

Comments: 33 pages, 10 figures

Journal ref: Phys. Rev. Research 4, 043099 (2022)

Atomic-scale measurement of localized dislocation phonons at Si/Ge interface

Authors: Yuehui Li, Bo Han, Ruochen Shi, Ruishi Qi, Xiaorui Hao, Ning Li, Bingyao Liu, Jinlong Du, Ji Chen, Peng Gao

Abstract: The nanoscale lattice imperfections, such as dislocations, have a significant impact on the thermal transport properties in non-metallic materials. Understanding such effects requires the knowledge of defect phonon modes, which however is largely unexplored in experiments due to the challenge in characterization of phonons for the atomic-sized defects. Here, at the atomic scale we directly measure… ▽ More The nanoscale lattice imperfections, such as dislocations, have a significant impact on the thermal transport properties in non-metallic materials. Understanding such effects requires the knowledge of defect phonon modes, which however is largely unexplored in experiments due to the challenge in characterization of phonons for the atomic-sized defects. Here, at the atomic scale we directly measure the localized phonon modes of dislocations at a Si/Ge interface using scanning transmission electron microscopy electron energy loss spectroscopy. We find that the dislocation induces new phonon modes localized within ~2-unit cells of the core, which experience a redshift of several milli-electron-volts compared to the dislocation-free case. The observed spectral features agree well with simulations. These localized modes are expected to reduce the phonon transmission channels across the defect and thus the local thermal conductivity. The revealed phonon modes localized at dislocations may help us to improve the thermal properties in thermoelectric generators and thermal management systems with proper defect engineering. △ Less

Submitted 5 June, 2022; originally announced June 2022.

Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity

Authors: Hangyong Shan, Ivan Iorsh, Bo Han, Christoph Rupprecht, Heiko Knopf, Falk Eilenberger, Martin Esmann, Kentaro Yumigeta, Kenji Watanabe, Takashi Taniguchi, Sebastian Klembt, Sven Höfling, Sefaattin Tongay, Carlos Antón-Solanas, Ivan A. Shelykh, Christian Schneider

Abstract: Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and de… ▽ More Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe2 with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe2 dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation. △ Less

Submitted 26 April, 2022; originally announced April 2022.

A gate-programmable van der Waals metal-ferroelectric-semiconductor memory

Authors: Wanying Li, Yimeng Guo, Zhaoping Luo, Bo Han, Xuepeng Zhan, Kenji Watanabe, Takashi Taniguchi, Jiezhi Chen, Peng Gao, Xiuyan Li, Chengxin Zhao, Zheng Vitto Han, Hanwen Wang

Abstract: Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future neuromo… ▽ More Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future neuromorphic applications, remains challenging. Here, we show a prototype gate-programmable memory by vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal-ferroelectric-semiconductor architecture. The resulted devices exhibit two-terminal switchable electro-resistance with on-off ratios exceeding 105 and long-term retention, akin to a conventional memristor but strongly coupled to the ferroelectric characteristics of the CuInP2S6 layer. By controlling the top gate, Fermi level of MoS2 can be set inside (outside) of its band gap to quench (enable) the memristive behaviour, yielding a three-terminal gate programmable nonvolatile vdW memory. Our findings pave the way for the engineering of ferroelectric-mediated memories in future implementations of nanoelectronics. △ Less

Submitted 18 April, 2022; originally announced April 2022.

A Class of Magnetic Topological Material Candidates with Hypervalent Bi Chains

Authors: Jason F. Khoury, Bingzheng Han, Milena Jovanovic, Ratnadwip Singha, Xiaoyu Song, Raquel Queiroz, N. Phuan Ong, Leslie M. Schoop

Abstract: The link between crystal and electronic structure is crucial for understanding structure-property relations in solid-state chemistry. In particular, it has been instrumental in understanding topological materials, where electrons behave differently than they would in conventional solids. Herein, we identify 1D Bi chains as a structural motif of interest for topological materials. We focus on Sm… ▽ More The link between crystal and electronic structure is crucial for understanding structure-property relations in solid-state chemistry. In particular, it has been instrumental in understanding topological materials, where electrons behave differently than they would in conventional solids. Herein, we identify 1D Bi chains as a structural motif of interest for topological materials. We focus on Sm$_3$ZrBi$_5$, a new quasi-one-dimensional (1D) compound in the Ln$_3$MPn$_5$ (Ln = lanthanide; M = metal; Pn = pnictide) family that crystallizes in the P$6_{3}$/mcm space group. Density functional theory calculations indicate a complex, topologically non-trivial electronic structure that changes significantly in the presence of spin-orbit coupling. Magnetic measurements show a quasi-1D antiferromagnetic structure with two magnetic transitions at 11.7 and 10.7 K that are invariant to applied field up to 9 T, indicating magnetically frustrated spins. Heat capacity, electrical, and thermal transport measurements support this claim and suggest complex scattering behavior in Sm$_3$ZrBi$_5$. This work highlights 1D chains as an unexplored structural motif for identifying topological materials, as well as the potential for rich physical phenomena in the Ln$_3$MPn$_5$ family. △ Less

Submitted 26 May, 2022; v1 submitted 23 March, 2022; originally announced March 2022.

Comments: 43 pages, 13 figures. Updated to add one reference and correct error in Figure 3

Direct observation of local antiferroelectricity induced phonon softening at a SrTiO3 defect

Authors: Bo Han, Ruochen Shi, Huining Peng, Yingjie Lv, Ruishi Qi, Yuehui Li, Jingmin Zhang, Jinlong Du, Pu Yu, Peng Gao

Abstract: Defects in oxides usually exhibit exotic properties that may be associated with the local lattice dynamics. Here, at atomic spatial resolution, we directly measure phonon modes of an antiphase boundary (APB) in SrTiO3 freestanding membrane and correlate them with the picometer-level structural distortion. We find that the SrTiO3 APB introduces new defect phonon modes that are absent in bulk SrTiO3… ▽ More Defects in oxides usually exhibit exotic properties that may be associated with the local lattice dynamics. Here, at atomic spatial resolution, we directly measure phonon modes of an antiphase boundary (APB) in SrTiO3 freestanding membrane and correlate them with the picometer-level structural distortion. We find that the SrTiO3 APB introduces new defect phonon modes that are absent in bulk SrTiO3. These modes are highly sensitive to the subtle structure distortion, i.e., the SrTiO3 APB generates the local electric dipoles forming an antiferroelectric configuration, which significantly softens the transverse optical (TO) and longitudinal optical (LO) modes at Γ point. Correlating the local phonons with the subtle structural distortion, our findings provide valuable insights into understanding the defect properties in complex oxides and essential information for their applications such as thermoelectric devices. △ Less

Submitted 3 March, 2022; originally announced March 2022.

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

Authors: Camille Maestre, Yangdi Li, Vincent Garnier, Philippe Steyer, Sébastien Roux, Alexandre Plaud, Annick Loiseau, Julien Barjon, Lei Ren, Cédric Robert, Bo Han, Xavier Marie, Catherine Journet, Bérangère Toury

Abstract: In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices.… ▽ More In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are relevant for future opto-electronic applications. △ Less

Submitted 19 January, 2022; originally announced January 2022.

Comments: 16 pages, 9 figures

Valley-exchange coupling probed by angle-resolved photoluminescence

Authors: Joshua J. P Thompson, Samuel Brem, Hanlin Fang, Carlos Antón-Solanas, Bo Han, Hangyong Shan, Saroj P. Dash, Witlef Wieczorek, Christian Schneider, Ermin Malic

Abstract: The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to… ▽ More The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion considerably. Here, we predict that angle-resolved photoluminescence can be used to probe the changes of the excitonic dispersion. The exchange-coupling leads to a unique angle dependence of the emission intensity for both circularly and linearly-polarised light. We show that these emission characteristics can be strongly tuned by an external magnetic field due to the valley-specific Zeeman-shift. We propose that angle-dependent photoluminescence measurements involving both circular and linear optical polarisation as well as magnetic fields should act as strong verification of the role of valley-exchange coupling on excitonic dispersionand its signatures in optical spectra △ Less

Submitted 19 November, 2021; originally announced November 2021.

Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures

Authors: H. Tornatzky, C. Robert, P. Renucci, B. Han, T. Blon, B. Lassagne, G. Ballon, Y. Lu, K. Watanabe, T. Taniguchi, B. Urbaszek, J. M. J. Lopes, X. Marie

Abstract: We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni i… ▽ More We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results are interpreted in terms of a spin-dependent charge transfer between the MoSe2 monolayer and the Nickel film. The build-up of circular polarization is observed up to 120 K, mainly limited by the trion emission that vanishes with temperature. △ Less

Submitted 25 October, 2021; originally announced October 2021.

Engineering of Atomic-Scale Flexoelectricity at Grain Boundaries

Authors: Mei Wu, Xiaowei Zhang, Xiaomei Li, Ke Qu, Yuanwei Sun, Bo Han, Ruixue Zhu, Jingmin Zhang, Kaihui Liu, Xuedong Ba, Xinzheng Li, Peng Gao

Abstract: Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the response of electrical polarization to mechanical strain gradients while not restricted to the symmetry of materials. However, large elastic deformation in most solids is usually difficult to achieve and the strain gradient at minuscule is challenging to control. Here we exploit the exotic structur… ▽ More Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the response of electrical polarization to mechanical strain gradients while not restricted to the symmetry of materials. However, large elastic deformation in most solids is usually difficult to achieve and the strain gradient at minuscule is challenging to control. Here we exploit the exotic structural inhomogeneity of grain boundary to achieve a huge strain gradient (~ 1.2 nm-1) within 3 ~ 4 unit-cells, and thus obtain atomic-scale flexoelectric polarization up to ~ 38 μC/cm2 at a 24 LaAlO3 grain boundary. The nanoscale flexoelectricity also modifies the electrical activity of grain boundaries. Moreover, we prove that it is a general and feasible way to form large strain gradients at atomic scale by altering the misorientation angles of grain boundaries in different dielectric materials. Thus, engineering of grain boundaries provides an effective pathway to achieve tunable flexoelectricity and broadens the electromechanical functionalities of non-piezoelectric materials. △ Less

Submitted 28 July, 2021; originally announced July 2021.

Comments: 16 pages,4 figures

Conformal Three-Dimensional Interphase of Li Metal Anode Revealed by Low Dose Cryo-Electron Microscopy

Authors: Bing Han, Xiangyan Li, Shuang Bai, Yucheng Zou, Bingyu Lu, Minghao Zhang, Xiaomin Ma, Zhi Chang, Ying Shirley Meng, Meng Gu

Abstract: Using cryogenic transmission electron microscopy, we revealed three dimensional (3D) structural details of the electrochemically plated lithium (Li) flakes and their solid electrolyte interphase (SEI), including the composite SEI skin-layer and SEI fossil pieces buried inside the Li matrix. As the SEI skin-layer is largely comprised of nanocrystalline LiF and Li2O in amorphous polymeric matrix, wh… ▽ More Using cryogenic transmission electron microscopy, we revealed three dimensional (3D) structural details of the electrochemically plated lithium (Li) flakes and their solid electrolyte interphase (SEI), including the composite SEI skin-layer and SEI fossil pieces buried inside the Li matrix. As the SEI skin-layer is largely comprised of nanocrystalline LiF and Li2O in amorphous polymeric matrix, when complete Li stripping occurs, the compromised SEI three-dimensional framework buckles, forming nanoscale bends and wrinkles. We showed that the flexibility and resilience of the SEI skin-layer plays a vital role in preserving an intact SEI 3D framework after Li stripping. The intact SEI network enables the nucleation and growth of the newly plated Li inside the previously formed SEI network in the subsequent cycles, preventing additional large amount of SEI formation between newly plated Li metal and the electrolyte. In addition, cells cycled under the accurately controlled uniaxial pressure can further enhance the repeated utilization of the SEI framework and improve the coulombic efficiency (CE) by up to 97%, demonstrating an effective strategy of reducing the formation of additional SEI and inactive dead Li. The identification of such flexible and porous 3D SEI framework clarifies the working mechanism of SEI in lithium metal anode for batteries. The insights provided in this work will inspire researchers to design more functional artificial 3D SEI on other metal anodes to improve rechargeable metal battery with long cycle life. △ Less

Submitted 10 June, 2021; originally announced June 2021.

Topologically ordered time crystals

Authors: Thorsten B. Wahl, Bo Han, Benjamin Béri

Abstract: We define topological time crystals, a dynamical phase of periodically driven quantum many-body systems capturing the coexistence of intrinsic topological order with the spontaneous breaking of discrete time-translation symmetry. We show that many-body localization can stabilize this phase against generic perturbations and establish some of its key features and signatures, including a dynamical, t… ▽ More We define topological time crystals, a dynamical phase of periodically driven quantum many-body systems capturing the coexistence of intrinsic topological order with the spontaneous breaking of discrete time-translation symmetry. We show that many-body localization can stabilize this phase against generic perturbations and establish some of its key features and signatures, including a dynamical, time-crystal form of the perimeter law for topological order. We link topological and ordinary time crystals through three complementary perspectives: higher-form symmetries, quantum error-correcting codes, and a holographic correspondence. We also propose an experimental realization of a surface-code-based topological time crystal for the Google Sycamore processor. △ Less

Submitted 16 June, 2023; v1 submitted 20 May, 2021; originally announced May 2021.

Comments: 10 pages, 5 figures

Imaging Seebeck drift of excitons and trions in MoSe2 monolayers

Authors: Sangjun Park, Bo Han, Caroline Boule, Daniel Paget, Alistair Rowe, Fausto Sirotti, Takashi Taniguchi, Kenji Watanabe, Cedric Robert, Laurent Lombez, Bernhard Urbaszek, Xavier Marie, Fabian Cadiz

Abstract: Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops… ▽ More Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe$_2$ monolayers encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS2 monolayers at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening without the appereance of a halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as thermal drift of trions due to a Seebeck term in the particle current. The model shows that the difference between trion and exciton profiles is simply understood in terms of the very different lifetimes of these two quasiparticles. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Journal ref: 2D Mater. 8 045014 (2021)

Torsion, energy magnetization and thermal Hall effect

Authors: Ze-Min Huang, Bo Han, Xiao-Qi Sun

Abstract: We study the effective action of hydrostatic response to torsion in the absence of spin connections in gapped $\left(2+1\right)$-dimensional topological phases. In previous studies, a torsional Chern-Simons term with a temperature-squared ($T^2$) coefficient was proposed as an alternative action to describe thermal Hall effect with the idea of balancing the diffusion of heat by a torsional field.… ▽ More We study the effective action of hydrostatic response to torsion in the absence of spin connections in gapped $\left(2+1\right)$-dimensional topological phases. In previous studies, a torsional Chern-Simons term with a temperature-squared ($T^2$) coefficient was proposed as an alternative action to describe thermal Hall effect with the idea of balancing the diffusion of heat by a torsional field. However, the question remains whether this action leads to local bulk thermal response which is not suppressed by the gap. In our hydrostatic effective action, we show that the $T^2$ bulk term is invariant under variations up to boundary terms considering the back reaction of the geometry on local temperature, which precisely describes the edge thermal current. Furthermore, there is no boundary diffeomorphism anomalies and bulk inflow thermal currents at equilibrium and therefore no edge-to-edge adiabatic thermal current pumping. These results are in consistent with exponentially suppressed thermal current for gapped phases. △ Less

Submitted 12 October, 2021; v1 submitted 4 May, 2021; originally announced May 2021.

Comments: Accepted version

Spatial coherence of room-temperature monolayer WSe$_2$ exciton-polaritons in a trap

Authors: Hangyong Shan, Lukas Lackner, Bo Han, Evgeny Sedov, Christoph Rupprecht, Heiko Knopf, Falk Eilenberger, Johannes Beierlein, Nils Kunte, Martin Esmann, Kentaro Yumigeta, Kenji Watanabe, Takashi Taniguchi, Sebastian Klembt, Sven Höfling, Alexey V. Kavokin, Sefaattin Tongay, Christian Schneider, Carlos Antón-Solanas

Abstract: The emergence of spatial and temporal coherence of light emitted from solid-state systems is a fundamental phenomenon, rooting in a plethora of microscopic processes. It is intrinsically aligned with the control of light-matter coupling, and canonical for laser oscillation. However, it also emerges in the superradiance of multiple, phase-locked emitters, and more recently, coherence and long-range… ▽ More The emergence of spatial and temporal coherence of light emitted from solid-state systems is a fundamental phenomenon, rooting in a plethora of microscopic processes. It is intrinsically aligned with the control of light-matter coupling, and canonical for laser oscillation. However, it also emerges in the superradiance of multiple, phase-locked emitters, and more recently, coherence and long-range order have been investigated in bosonic condensates of thermalized light, as well as in exciton-polaritons driven to a ground state via stimulated scattering. Here, we experimentally show that the interaction between photons in a Fabry-Perot microcavity and excitons in an atomically thin WSe$_2$ layer is sufficient such that the system enters the hybridized regime of strong light-matter coupling at ambient conditions. Via Michelson interferometry, we capture clear evidence of increased spatial and temporal coherence of the emitted light from the spatially confined system ground-state. The coherence build-up is accompanied by a threshold-like behaviour of the emitted light intensity, which is a fingerprint of a polariton laser effect. Valley-physics is manifested in the presence of an external magnetic field, which allows us to manipulate K and K' polaritons via the Valley-Zeeman-effect. Our findings are of high application relevance, as they confirm the possibility to use atomically thin crystals as simple and versatile components of coherent light-sources, and in valleytronic applications at room temperature. △ Less

Submitted 9 November, 2021; v1 submitted 18 March, 2021; originally announced March 2021.

Comments: 13 pages, 4 figures

Journal ref: Shan, H. et al., Nature Communications 12, 6406 (2021)

Classification of $SL_2$ deformed Floquet Conformal Field Theories

Authors: Bo Han, Xueda Wen

Abstract: Classification of the non-equilibrium quantum many-body dynamics is a challenging problem in condensed matter physics and statistical mechanics. In this work, we study the basic question that whether a (1+1) dimensional conformal field theory (CFT) is stable or not under a periodic driving with $N$ non-commuting Hamiltonians. Previous works showed that a Floquet (or periodically driven) CFT driven… ▽ More Classification of the non-equilibrium quantum many-body dynamics is a challenging problem in condensed matter physics and statistical mechanics. In this work, we study the basic question that whether a (1+1) dimensional conformal field theory (CFT) is stable or not under a periodic driving with $N$ non-commuting Hamiltonians. Previous works showed that a Floquet (or periodically driven) CFT driven by certain $SL_2$ deformed Hamiltonians exhibit both non-heating (stable) and heating (unstable) phases. In this work, we show that the phase diagram depends on the types of driving Hamiltonians. In general, the heating phase is generic, but the non-heating phase may be absent in the phase diagram. For the existence of the non-heating phases, we give sufficient and necessary conditions for $N=2$, and sufficient conditions for $N>2$. These conditions are composed of $N$ layers of data, with each layer determined by the types of driving Hamiltonians. Our results also apply to the single quantum quench problem with $N=1$. △ Less

Submitted 18 August, 2020; v1 submitted 3 August, 2020; originally announced August 2020.

Comments: 16 pages

Journal ref: Phys. Rev. B 102, 205125 (2020)

Entanglement Entropy of Generalized Moore-Read Fractional Quantum Hall State Interfaces

Authors: Ramanjit Sohal, Bo Han, Luiz H. Santos, Jeffrey C. Y. Teo

Abstract: Topologically ordered phases of matter can be characterized by the presence of a universal, constant contribution to the entanglement entropy known as the topological entanglement entropy (TEE). The TEE can been calculated for Abelian phases via a "cut-and-glue" approach by treating the entanglement cut as a physical cut, coupling the resulting gapless edges with explicit tunneling terms, and comp… ▽ More Topologically ordered phases of matter can be characterized by the presence of a universal, constant contribution to the entanglement entropy known as the topological entanglement entropy (TEE). The TEE can been calculated for Abelian phases via a "cut-and-glue" approach by treating the entanglement cut as a physical cut, coupling the resulting gapless edges with explicit tunneling terms, and computing the entanglement between the two edges. We provide a first step towards extending this methodology to non-Abelian topological phases, focusing on the generalized Moore-Read (MR) fractional quantum Hall states at filling fractions $ν=1/n$. We consider interfaces between different MR states, write down explicit gapping interactions, which we motivate using an anyon condensation picture, and compute the entanglement entropy for an entanglement cut lying along the interface. Our work provides new insight towards understanding the connections between anyon condensation, gapped interfaces of non-Abelian phases, and TEE. △ Less

Submitted 7 July, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Comments: 34 pages; 2 figures. v2: updated references. v3: minor edits

Journal ref: Phys. Rev. B 102, 045102 (2020)

Torsional Anomalies and Bulk-Dislocation Correspondence in Weyl Systems

Authors: Ze-Min Huang, Bo Han

Abstract: Based on the supersymmetric quantum mechanical approach, we have systematically studied both the $U\left(1\right)$ gauge anomaly and the diffeomorphism anomaly in Weyl systems with torsion, curvature and external electromagnetic fields. These anomalies relate to the chiral current (or current) non-conservation and chiral energy-momentum (or energy-momentum) non-conservation, respectively, which ca… ▽ More Based on the supersymmetric quantum mechanical approach, we have systematically studied both the $U\left(1\right)$ gauge anomaly and the diffeomorphism anomaly in Weyl systems with torsion, curvature and external electromagnetic fields. These anomalies relate to the chiral current (or current) non-conservation and chiral energy-momentum (or energy-momentum) non-conservation, respectively, which can be applied to the $^{3}\text{He-A}$ phase, the chiral superconductors and the Weyl semimetals with dislocations and disclinations. In sharp difference with other anomalies, there exist torsional anomalies depending on the position of Weyl nodes in the energy-momentum space. These anomalies originate from particles pumped up through the Weyl nodes and they are thus insensitive to the ultra-violet physics, while the Nieh-Yan anomaly is from the particle inflow through the ultra-violet cut-off. The current non-conservation as well as the energy-momentum non-conservation are found, which stem from the zero modes trapped in the dislocations and they can be understood from the Callan-Harvey mechanism. Finally, by comparing our results with the well-established momentum anomaly in the $^{3}\text{He-A}$ phase, the Nieh-Yan term as well as other cut-off dependent terms are shown to be negligible, because the ratio between the Lorentz symmetry breaking scale and the chemical potential is of order $10^{-5}$. △ Less

Submitted 10 March, 2020; originally announced March 2020.

Comments: 16 pages

Measurement of the Spin-Forbidden Dark Excitons in MoS2 and MoSe2 monolayers

Authors: C. Robert, B. Han, P. Kapuscinski, A. Delhomme, C. Faugeras, T. Amand, M. R. Molas, M. Bartos, K. Watanabe, T. Taniguchi, B. Urbaszek, M. Potemski, X. Marie

Abstract: Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminesc… ▽ More Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties of these 2D materials. Here we measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in boron nitride by magneto-photoluminescence spectroscopy in magnetic fields up to 30 T. The experiments performed in transverse magnetic field reveal a brightening of the spin-forbidden dark excitons in MoS2 monolayer: we find that the dark excitons appear at 14 meV below the bright ones. Measurements performed in tilted magnetic field provide a conceivable description of the neutral exciton fine structure. The experimental results are in agreement with a model taking into account the effect of the exchange interaction on both the bright and dark exciton states as well as the interaction with the magnetic field. △ Less

Submitted 10 February, 2020; originally announced February 2020.

Wettability and surface energy of parylene F

Authors: Bing Han, Peng Wang, Huichao Jin, Zhishan Hou, Xue Bai

Abstract: Parylenes are barrier materials employed as protective layers. However, many parylenes are unsuitable for applications under harsh conditions. A new material, parylene F, demonstrates considerable potential for a wide range of applications due to its high temperature and UV resistance. For the first time, the wettability and surface energy of parylene F were investigated to determine the feasibili… ▽ More Parylenes are barrier materials employed as protective layers. However, many parylenes are unsuitable for applications under harsh conditions. A new material, parylene F, demonstrates considerable potential for a wide range of applications due to its high temperature and UV resistance. For the first time, the wettability and surface energy of parylene F were investigated to determine the feasibility of parylene F as an alternative to the commonly employed parylene C. The results show that parylene F has a hydrophobic surface with a water contact angle of 109.63 degrees. We found that 3.5 ul probe liquid is an optimal value for the contact angle measurement of parylene F. Moreover, we found that the Owens-Wendt-Kaelble and the Lifshitz-van der Waals/acid-base approaches are unsuitable for determining the surface energy of parylene F, whereas an approach based on the limitless liquid-solid interface wetting system is compatible. Furthermore, the results show that parylene F has a surface energy of 39.05 mJ/m2. Considering the improved resistance, relatively low cost, and the desirable properties, parylene F can replace parylene C for applications under harsh conditions. △ Less

Submitted 19 January, 2020; v1 submitted 16 January, 2020; originally announced January 2020.

Comments: There are some errors in the conclusion of the paper, which is based on the equation (6). It is needed to improve the method and equations

Journal ref: Phys. Lett. A, 384 (2020) 126628

Hamiltonian approach to the torsional anomalies and its dimensional ladder

Authors: Ze-Min Huang, Bo Han, Michael Stone

Abstract: Torsion can cause various anomalies in various dimensions, including the $\left(3+1\right)$-dimensional $[(3+1)D]$ Nieh-Yan anomaly, the $\left(2+1\right)$D Hughes-Leigh-Fradkin (HLF) parity anomaly, and the $\left(3+1\right)$D, $\left(1+1\right)$D chiral energy-momentum anomaly. We study these anomalies from the Hamiltonian approach. We derive the $\left(1+1\right)$D chiral energy-momentum anomal… ▽ More Torsion can cause various anomalies in various dimensions, including the $\left(3+1\right)$-dimensional $[(3+1)D]$ Nieh-Yan anomaly, the $\left(2+1\right)$D Hughes-Leigh-Fradkin (HLF) parity anomaly, and the $\left(3+1\right)$D, $\left(1+1\right)$D chiral energy-momentum anomaly. We study these anomalies from the Hamiltonian approach. We derive the $\left(1+1\right)$D chiral energy-momentum anomaly from the single-body Hamiltonian. We then show how other torsional anomalies can be related to the $\left(1+1\right)$D chiral energy-momentum anomaly in a straightforward way. Finally, the Nieh-Yan anomaly and the $\left(3+1\right)$D chiral energy-momentum anomaly are obtained from the parity anomaly and the HLF effective action, respectively. Hence, we have constructed the dimensional ladder for the torsional anomalies from the single-body Hamiltonian picture. △ Less

Submitted 2 June, 2020; v1 submitted 12 December, 2019; originally announced December 2019.

Comments: 10 pages, 1 figure. Typos are corrected

Journal ref: Phys. Rev. B 101, 165201 (2020)

Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures

Authors: Bo Han, Chen Yang, Xiaolong Xu, Yuehui Li, Ruochen Shi, Kaihui Liu, Haicheng Wang, Yu Ye, Jing Lu, Dapeng Yu, Peng Gao

Abstract: Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations t… ▽ More Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties and atomic structure. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit cells. The plasmonic oscillations exhibit strong angle dependence, i.e., a red-shift (approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials. △ Less

Submitted 22 November, 2019; originally announced November 2019.

Comments: 14 pages and 4 figures. National Science Review 2020

Journal ref: National Science Review, 2020, nwaa087

Nieh-Yan Anomaly: Torsional Landau Levels, central charge and anomalous thermal Hall effect

Authors: Ze-Min Huang, Bo Han, Michael Stone

Abstract: The Nieh-Yan anomaly is the anomalous breakdown of the chiral U(1) symmetry caused by the interaction between torsion and fermions. We study this anomaly from the point of view of torsional Landau levels. It was found that the torsional Landau levels are gapless, while their contributions to the chiral anomaly are canceled, except those from the lowest torsional Landau levels. Hence, the dimension… ▽ More The Nieh-Yan anomaly is the anomalous breakdown of the chiral U(1) symmetry caused by the interaction between torsion and fermions. We study this anomaly from the point of view of torsional Landau levels. It was found that the torsional Landau levels are gapless, while their contributions to the chiral anomaly are canceled, except those from the lowest torsional Landau levels. Hence, the dimension is effectively reduced from (3+1)-dimensional to (1+1)-dimensional. We further show that the coefficient of the Nieh-Yan anomaly is the free energy density in (1+1) dimensions. Especially, at finite temperature, the thermal Nieh-Yan anomaly is proportional to the central charge. The anomalous thermal Hall conductance in Weyl semimetals is then shown to be proportional to the central charge, which is the experimental fingerprint of the thermal Nieh-Yan anomaly. △ Less

Submitted 13 March, 2020; v1 submitted 31 October, 2019; originally announced November 2019.

Comments: 6 pages, 3 figures. Published version

Journal ref: Phys. Rev. B 101, 125201 (2020)

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

Authors: Su Kong Chong, Kyu Bum Han, Taylor D. Sparks, Vikram V. Deshpande

Abstract: The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling betwe… ▽ More The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation. △ Less

Submitted 5 January, 2020; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 123, 036804 (2019)

Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials

Authors: Bingnan Han, Yuxuan Lin, Yafang Yang, Nannan Mao, Wenyue Li, Haozhe Wang, Kenji Yasuda, Xirui Wang, Valla Fatemi, Lin Zhou, Joel I-Jan Wang, Qiong Ma, Yuan Cao, Daniel Rodan-Legrain, Ya-Qing Bie, Efrén Navarro-Moratalla, Dahlia Klein, David MacNeill, Sanfeng Wu, Hikari Kitadai, Xi Ling, Pablo Jarillo-Herrero, Jing Kong, Jihao Yin, Tomás Palacios

Abstract: Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the d… ▽ More Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries. △ Less

Submitted 27 January, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Scaling-up atomically thin coplanar semiconductor-metal circuitry via phase engineered chemical assembly

Authors: Xiaolong Xu, Shuai Liu, Bo Han, Yimo Han, Wanjin Xu, Xiaohan Yao, Kai Yuan, Pan Li, Shiqi Yang, Wenting Gong, David A. Muller, Peng Gao, Yu Ye, Lun Dai

Abstract: Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown pro… ▽ More Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external bulky metals are usually unsatisfactory, which limits the transistor performance. Recently, contacting 2D semiconductors using coplanar 2D conductors has shown promise in reducing the problematic high resistance contacts. However, many of these methods are not ideal for scaled production. Here, we report on the large-scale, spatially controlled chemical assembly of the integrated 2H-MoTe2 field-effect transistors (FETs) with coplanar metallic 1T' MoTe2 contacts via phase engineered approaches. We demonstrate that the heterophase FETs exhibit ohmic contact behavior with low contact resistance, resulting from the coplanar seamless contact between 2H and 1T' MoTe2 confirmed by transmission electron microscopy characterizations. The average mobility of the heterophase FETs was measured to be as high as 23 cm2 V-1 s-1 (comparable with those of exfoliated single crystals), due to the large 2H MoTe2 single-crystalline domain (486μm). By developing a patterned growth method, we realize the 1T' MoTe2 gated heterophase FET array whose components of channel, gate, and contacts are all 2D materials. Finally, we transfer the heterophase device array onto a flexible substrate and demonstrate the near-infrared photoresponse with high photoresponsivity (~1.02 A/W). Our study provides a basis for the large-scale application of phase-engineered coplanar MoTe2 semiconductors-meter structure in advanced electronics and optoelectronics. △ Less

Submitted 17 April, 2019; originally announced April 2019.

Comments: 16 pages, 4 figures

Hyperpolarized relaxometry based nuclear T1 noise spectroscopy in hybrid diamond quantum registers

Authors: Ashok Ajoy, Ben Safvati, Raffi Nazaryan, J. T. Oon, Ben Han, Priyanka Raghavan, Ruhee Nirodi, Alessandra Aguilar, Kristina Liu, Xiao Cai, Xudong Lv, Emanuel Druga, Chandrasekhar Ramanathan, Jeffrey A. Reimer, Carlos A. Meriles, Dieter Suter, Alexander Pines

Abstract: Understanding the origins of spin lifetimes in hybrid quantum systems is a matter of current importance in several areas of quantum information and sensing. Methods that spectrally map spin relaxation processes provide insight into their origin and can motivate methods to mitigate them. In this paper, using a combination of hyperpolarization and precision field cycling over a wide range (1mT-7T),… ▽ More Understanding the origins of spin lifetimes in hybrid quantum systems is a matter of current importance in several areas of quantum information and sensing. Methods that spectrally map spin relaxation processes provide insight into their origin and can motivate methods to mitigate them. In this paper, using a combination of hyperpolarization and precision field cycling over a wide range (1mT-7T), we map frequency dependent relaxation in a prototypical hybrid system of 13C nuclear spins in diamond coupled to Nitrogen Vacancy centers. Nuclear hyperpolarization through the optically pumped NV electrons allows signal time savings for the measurements exceeding million-fold over conventional methods. We observe that 13C lifetimes show a dramatic field dependence, growing rapidly with field up to 100mT and saturating thereafter. Through a systematic study with increasing substitutional electron (P1 center) concentration as well as 13C enrichment levels, we identify the operational relaxation channels for the nuclei in different field regimes. In particular, we demonstrate the dominant role played by the 13C nuclei coupling to the interacting P1 electronic spin bath. These results pave the way for quantum control techniques for dissipation engineering to boost spin lifetimes in diamond, with applications ranging from engineered quantum memories to hyperpolarized 13C imaging. △ Less

Submitted 16 February, 2019; originally announced February 2019.

Comments: Contains supplementary info

Control of the Exciton Radiative Lifetime in van der Waals Heterostructures

Authors: H. H. Fang, B. Han, C. Robert, M. A. Semina, D. Lagarde, E. Courtade, T. Taniguchi, K. Watanabe, T. Amand, B. Urbaszek, M. M. Glazov, X. Marie

Abstract: Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures… ▽ More Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow optical transitions approaching the homogenous exciton linewidth. We demonstrate that the exciton radiative rate in these van der Waals heterostructures can be tailored by a simple change of the hBN encapsulation layer thickness as a consequence of the Purcell effect. The time-resolved photoluminescence measurements together with cw reflectivity and photoluminescence experiments show that the neutral exciton spontaneous emission time can be tuned by one order of magnitude depending on the thickness of the surrounding hBN layers. The inhibition of the radiative recombination can yield spontaneous emission time up to $10$~ps. These results are in very good agreement with the calculated recombination rate in the weak exciton-photon coupling regime. The analysis shows that we are also able to observe a sizeable enhancement of the exciton radiative decay rate. Understanding the role of these electrodynamical effects allow us to elucidate the complex dynamics of relaxation and recombination for both neutral and charged excitons. △ Less

Submitted 15 July, 2019; v1 submitted 2 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Lett. 123, 067401 (2019)

A non-Abelian twist to integer quantum Hall states

Authors: Pedro L. S. Lopes, V. L. Quito, Bo Han, Jeffrey C. Y. Teo

Abstract: Through a theoretical coupled wire model, we construct strongly correlated electronic \emph{integer} quantum Hall states. As a distinguishing feature, these states support electric and thermal Hall transport violating the Wiedemann-Franz law as $\left(κ_{xy}/σ_{xy}\right)/\left[\left(π^{2}k_{B}^{2}T\right)/3e^{2}\right]<1$.We propose a new Abelian incompressible fluid at filling $ν=16$ that suppor… ▽ More Through a theoretical coupled wire model, we construct strongly correlated electronic \emph{integer} quantum Hall states. As a distinguishing feature, these states support electric and thermal Hall transport violating the Wiedemann-Franz law as $\left(κ_{xy}/σ_{xy}\right)/\left[\left(π^{2}k_{B}^{2}T\right)/3e^{2}\right]<1$.We propose a new Abelian incompressible fluid at filling $ν=16$ that supports a bosonic chiral $(E_{8})_{1}$ conformal field theory at the edge and is intimately related to topological paramagnets in (3+1)D. We further show that this topological phase can be partitioned into two non-Abelian quantum Hall states at filling $ν=8$, each carrying bosonic chiral $(G_{2})_{1}$ or $(F_{4})_{1}$ edge theories, and hosting Fibonacci anyonic excitations in the bulk. Finally, we discover a new notion of particle-hole conjugation based on the $E_{8}$ state that relates the $G_{2}$ and $F_{4}$ Fibonacci states. △ Less

Submitted 13 August, 2019; v1 submitted 25 January, 2019; originally announced January 2019.

Comments: 12 pages. 3 figures

Journal ref: Phys. Rev. B 100, 085116 (2019)

Generalized Wen-Zee Terms

Authors: Bo Han, Huajia Wang, Peng Ye

Abstract: Motivated by symmetry-protected topological phases (SPTs) with both spatial symmetry (e.g., lattice rotation) and internal symmetry (e.g., spin rotation), we propose a class of exotic topological terms, which generalize the well-known Wen-Zee topological terms of quantum Hall systems [X.-G. Wen and A. Zee, Phys. Rev. Lett. 69, 953 (1992)]. These generalized Wen-Zee terms are expressed as wedge pro… ▽ More Motivated by symmetry-protected topological phases (SPTs) with both spatial symmetry (e.g., lattice rotation) and internal symmetry (e.g., spin rotation), we propose a class of exotic topological terms, which generalize the well-known Wen-Zee topological terms of quantum Hall systems [X.-G. Wen and A. Zee, Phys. Rev. Lett. 69, 953 (1992)]. These generalized Wen-Zee terms are expressed as wedge product of spin connection and usual gauge fields (1-form or higher) in various dimensions. In order to probe SPT orders, we externally insert "symmetry twists" like domain walls of discrete internal symmetry and disclinations that are geometric defects with nontrivial Riemann curvature. Then, generalized Wen-Zee terms simply tells us how SPTs respond to those symmetry twists. Classifying these exotic topological terms thus leads to a complete classification and characterization of SPTs within the present framework. We also propose SPT low-energy field theories, from which generalized Wen-Zee terms are deduced as topological response actions. Following the Abstract of Wen-Zee paper, our work enriches alternative possibilities of condensed-matter realization of unification of electromagnetism and "gravity". △ Less

Submitted 21 January, 2019; v1 submitted 27 July, 2018; originally announced July 2018.

Comments: 13p, 5 figures

Journal ref: Phys. Rev. B 99, 205120 (2019)

A coupled wire description of surface $ADE$ topological orders

Authors: Bo Han, Jeffrey C. Y. Teo

Abstract: Symmetry-protected and symmetry-enriched topological (SPT/SET) phases in three dimensions are quantum systems that support non-trivial two-dimensional surface states. These surface states develop finite excitation energy gaps when the relevant symmetries are broken. On the other hand, one-dimensional gapless modes can populate along interfaces that separate adjacent gapped surface domains with dis… ▽ More Symmetry-protected and symmetry-enriched topological (SPT/SET) phases in three dimensions are quantum systems that support non-trivial two-dimensional surface states. These surface states develop finite excitation energy gaps when the relevant symmetries are broken. On the other hand, one-dimensional gapless modes can populate along interfaces that separate adjacent gapped surface domains with distinct symmetry-breaking orders. A surface strip pattern in general reduces the low-energy SPT/SET surface degrees of freedom onto a 2D array of gapless 1D channels. These channels can be coupled to one another by quasiparticle tunneling, and these inter-wire interactions collectively provide an effective description of the surface state. In this paper, we study a general class of symmetry-preserving or breaking SPT/SET surface states that admit finite excitation energy gaps and Abelian topological orders via the coupled wire construction. In particular, we focus on the prototype Abelian surface topological orders that fall under the $ADE$ classification of simply-laced Lie algebras. We also elaborate on the emergent symmetry and duality properties of the coupled wire models. △ Less

Submitted 3 June, 2019; v1 submitted 26 July, 2018; originally announced July 2018.

Comments: 28 pages, 6 figures. Published version

Journal ref: Phys. Rev. B 99, 235102 (2019)

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Authors: Su Kong Chong, Kyu Bum Han, Akira Nagaoka, Ryuichi Tsuchikawa, Renlong Liu, Haoliang Liu, Z. Valy Vardeny, Dmytro A. Pesin, Changgu Lee, Taylor D. Sparks, Vikram V. Deshpande

Abstract: Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface… ▽ More Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 19 pages, 4 figures

Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy

Authors: B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, B. Urbaszek

Abstract: Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator… ▽ More Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors. △ Less

Submitted 11 May, 2018; originally announced May 2018.

Comments: 14 pages, 7 figures, main text and appendix

Journal ref: Phys. Rev. X 8, 031073 (2018)

Spectrally narrow exciton luminescence from monolayer MoS2 exfoliated onto epitaxially grown hexagonal BN

Authors: E. Courtade, B. Han, S. Nakhaie, C. Robert, X. Marie, P. Renucci, T. Taniguchi, K. Watanabe, L. Geelhaar, J. M. J. Lopes, B. Urbaszek

Abstract: The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN f… ▽ More The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN from high quality flakes grown under high pressure. In this work, we show that hBN grown by molecular beam epitaxy (MBE) over a large surface area substrate has a similarly positive impact on the optical emission from TMD MLs. We deposit MoS$_2$ and MoSe$_2$ MLs on ultrathin hBN films (few MLs thick) grown on Ni/MgO(111) by MBE. Then we cover them with exfoliated hBN to finally obtain an encapsulated sample : exfoliated hBN/TMD ML/MBE hBN. We observe an improved optical quality of our samples compared to TMD MLs exfoliated directly on SiO$_2$ substrates. Our results suggest that hBN grown by MBE could be used as a flat and charge free substrate for fabricating TMD-based heterostructures on a larger scale. △ Less

Submitted 18 April, 2018; originally announced April 2018.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 113, 032106 (2018)