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Structural Constraint Integration in Generative Model for Discovery of Quantum Material Candidates
Authors:
Ryotaro Okabe,
Mouyang Cheng,
Abhijatmedhi Chotrattanapituk,
Nguyen Tuan Hung,
Xiang Fu,
Bowen Han,
Yao Wang,
Weiwei Xie,
Robert J. Cava,
Tommi S. Jaakkola,
Yongqiang Cheng,
Mingda Li
Abstract:
Billions of organic molecules are known, but only a tiny fraction of the functional inorganic materials have been discovered, a particularly relevant problem to the community searching for new quantum materials. Recent advancements in machine-learning-based generative models, particularly diffusion models, show great promise for generating new, stable materials. However, integrating geometric patt…
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Billions of organic molecules are known, but only a tiny fraction of the functional inorganic materials have been discovered, a particularly relevant problem to the community searching for new quantum materials. Recent advancements in machine-learning-based generative models, particularly diffusion models, show great promise for generating new, stable materials. However, integrating geometric patterns into materials generation remains a challenge. Here, we introduce Structural Constraint Integration in the GENerative model (SCIGEN). Our approach can modify any trained generative diffusion model by strategic masking of the denoised structure with a diffused constrained structure prior to each diffusion step to steer the generation toward constrained outputs. Furthermore, we mathematically prove that SCIGEN effectively performs conditional sampling from the original distribution, which is crucial for generating stable constrained materials. We generate eight million compounds using Archimedean lattices as prototype constraints, with over 10% surviving a multi-staged stability pre-screening. High-throughput density functional theory (DFT) on 26,000 survived compounds shows that over 50% passed structural optimization at the DFT level. Since the properties of quantum materials are closely related to geometric patterns, our results indicate that SCIGEN provides a general framework for generating quantum materials candidates.
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Submitted 5 July, 2024;
originally announced July 2024.
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Self-assembly behaviour of diblock copolymer-diblock copolymer under oscillating shear field
Authors:
Y. Guo,
H. He,
X. Fu
Abstract:
The self-assembly behaviour of a diblock copolymer-diblock copolymer mixture under an oscillating shear field is investigated via cell dynamics simulation. The results indicate that the macrophase separation of the composite system is accompanied by the corresponding microphase separation induced by the oscillating shear field. With an increase in the shear frequency, the AB phase changes from a t…
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The self-assembly behaviour of a diblock copolymer-diblock copolymer mixture under an oscillating shear field is investigated via cell dynamics simulation. The results indicate that the macrophase separation of the composite system is accompanied by the corresponding microphase separation induced by the oscillating shear field. With an increase in the shear frequency, the AB phase changes from a tilted layered structure to a parallel layered structure, and finally to a vertical layered structure. The CD phase transforms from the initial concentric ring into a parallel layer in the ring and then into a parallel layered structure; thus, the system finally forms a layered structure of the AB phase (vertical layer) and CD phase (parallel layer) perpendicular to each other. To verify the phase transition, the dynamic evolution of the domain size at different shear frequencies is analysed. The ordered phase transition with an increase in the oscillating shear field varies when the initial composition ratio of the system is changed. This conclusion provides a valuable guidance for the formation and transformation of ordered structures in experiments.
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Submitted 30 June, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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Isolated anions induced high ionic conductivity
Authors:
Qifan Yang,
Jing Xu,
Yuqi Wang,
Xiao Fu,
Ruijuan Xiao,
Hong Li
Abstract:
One of the key materials in solid-state lithium batteries is fast ion conductors. However, the Li+ ion transport in inorganic crystals involves complex factors, making it a mystery to find and design ion conductors with low migration barriers. In this work, a distinctive structural characteristic involving isolated anions has been discovered to enhance high ionic conductivity in crystals. It is an…
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One of the key materials in solid-state lithium batteries is fast ion conductors. However, the Li+ ion transport in inorganic crystals involves complex factors, making it a mystery to find and design ion conductors with low migration barriers. In this work, a distinctive structural characteristic involving isolated anions has been discovered to enhance high ionic conductivity in crystals. It is an effective way to create a smooth energy potential landscape and construct local pathways for lithium ion migration. By adjusting the spacing and arrangement of the isolated anions, these local pathways can connect with each other, leading to high ion conductivity. By designing different space groups and local environments of the Se2- anions in the Li8SiSe6 composition, combined with the ion transport properties obtained from AIMD simulations, we define isolated anions and find that local environment with higher point group symmetry promotes the formation of cage-like local transport channels. Additionally, the appropriate distance between neighboring isolated anions can create coplanar connections between adjacent cage-like channels. Furthermore, different types of isolated anions can be used to control the distribution of cage-like channels in the lattice. Based on the structural characteristic of isolated anions, we discovered compounds with isolated N3-, Cl-, I-, and S2- features from the crystal structure databases. The confirmation of ion transport in these structures validates the proposed design method of using isolated anions as structural features for fast ion conductors and leads to the discovery of several new fast ion conductor materials.
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Submitted 4 June, 2024;
originally announced June 2024.
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Spin chirality engineering induced giant topological Hall effect in a kagome magnet
Authors:
Wei Xia,
Shihao Zhang,
Jian Yuan,
Yurui Wei,
Haonan Wang,
Hong Du,
Xiangqi Liu,
Jiangteng Guo,
Zicheng Tao,
Ke Qu,
Xia Wang,
Xuerong Liu,
Wenbo Wang,
Jinguang Cheng,
Yulin Chen,
Jianpeng Liu,
Ruidan Zhong,
Xuewen Fu,
Zhenzhong Yang,
Yanfeng Guo
Abstract:
The ferrimagnet TbMn6Sn6 has attracted vast attention, because its pristine Mn kagome lattice with strong spin-orbit coupling and out-of-plane Tb-Mn exchange supports quantum-limit Chern topological magnetism which can be described by the simple spinless Haldane model. We unveil herein that engineering the pristine kagome lattice through partial replacement of Mn by nonmagnetic Cr which tends to c…
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The ferrimagnet TbMn6Sn6 has attracted vast attention, because its pristine Mn kagome lattice with strong spin-orbit coupling and out-of-plane Tb-Mn exchange supports quantum-limit Chern topological magnetism which can be described by the simple spinless Haldane model. We unveil herein that engineering the pristine kagome lattice through partial replacement of Mn by nonmagnetic Cr which tends to concentrate into the single Mn1 layer in a unit cell breaks the collinear configuration of Mn spins and reduces the D6h point group symmetry to the C2 one. The nearly isolated Tb networks result in easily polarized Tb spins even under a weak magnetic field, and simultaneously, different spin chirality of the Tb-Mn1-Mn1 and Mn1-Mn1-Mn1. Such a peculiar spin structure leads to a plateau-like topological Hall effect with a record resistivity of 19.1 μOhm cm among bulk systems. Our direct visualization of the domain-wall structure and its evolution under external magnetic field fully support the picture, thus highlighting the pivotal role of broken kagome lattice symmetry in generating the peculiar spin chirality in real space. Our results set a paradigm for exploration of exotic properties in kagome topological magnets and would be a proof-of-principle strategy for investigating the correlation between magnetism and exotic topological properties in kagome lattice.
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Submitted 24 May, 2024;
originally announced May 2024.
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Spin-polarized p-wave superconductivity in the kagome material RbV$_3$Sb$_5$
Authors:
Shuo Wang,
Xilin Feng,
Jing-Zhi Fang,
Jia-Peng Peng,
Zi-Ting Sun,
Jia-Jie Yang,
Jingchao Liu,
Jia-Ji Zhao,
Jian-Kun Wang,
Xin-Jie Liu,
Ze-Nan Wu,
Shengbiao Sun,
Ning Kang,
Xiao-Song Wu,
Zhensheng Zhang,
Xuewen Fu,
Kam Tuen Law,
Ben-Chuan Lin,
Dapeng Yu
Abstract:
The study of kagome materials has attracted much attention in the past few years due to the presence of many electron-electron interaction-driven phases in a single material.In this work, we report the discovery of intrinsic spin-polarized p-wave superconductivity in the thin-flake kagome material RbV$_3$Sb$_5$. Firstly, when an in-plane magnetic field is swept in opposite directions, we observe a…
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The study of kagome materials has attracted much attention in the past few years due to the presence of many electron-electron interaction-driven phases in a single material.In this work, we report the discovery of intrinsic spin-polarized p-wave superconductivity in the thin-flake kagome material RbV$_3$Sb$_5$. Firstly, when an in-plane magnetic field is swept in opposite directions, we observe a unique form of hysteresis in magnetoresistance which is different from the hysteresis induced by extrinsic mechanisms such as flux-trapping or superheating and supercooling effects. The unconventional hysteresis indicates the emergence of an intrinsic time-reversal symmetry-breaking superconducting phase. Strikingly, at a fixed magnetic field, the finite-resistance state can be quenched to the zero-resistance state by applying a large current. Secondly, at temperatures around 400 mK, the re-entrance of superconductivity occurs during an in-plane field-sweeping process with a fixed sweeping direction. This kind of re-entrance is asymmetric about the zero field axis and observed in all field directions for a fixed current direction, which is different from the re-entrance observed in conventional superconductors. Moreover, the angle-dependent in-plane critical field measurements reveal a two-fold symmetry that deviates from the original, centrosymmetric D$_{6h}$ point group symmetry of the crystal. These findings put very strong constraints on the possible superconducting pairing symmetry of RbV$_3$Sb$_5$. We point out that the pairing symmetry, which is consistent with the crystal symmetry and all the observed novel properties, is a time-reversal symmetry-breaking, p-wave pairing with net spin polarization. Importantly, this p-wave pairing gives rise to a nodal topological superconducting state with Majorana flat bands on the sample edges.
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Submitted 21 May, 2024;
originally announced May 2024.
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Direct visualization of the impurity occupancy roadmap in Ni-substituted van der Waals ferromagnet Fe3GaTe2
Authors:
Jian Yuan,
Haonan Wang,
Xiaofei Hou,
Binshuo Zhang,
Yurui Wei,
Jiangteng Guo,
Lu Sun,
Zhenhai Yu,
Zhikai Li,
Xiangqi Liu,
Wei Xia,
Xia Wang,
Xuerong Liu,
Yulin Chen,
Shihao Zhang,
Xuewen Fu,
Ke Qu,
Zhenzhong Yang,
Yanfeng Guo
Abstract:
Impurity substitution is a general strategy to study the intrinsic properties of a quantum material. However, when the target element has more than one Wyckoff position in the lattice, it is a big challenge but with extreme necessity to know the exact position and order of the occupancy of impurity atoms. Via comprehensive experimental and theoretical investigations, we establish herein the roadma…
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Impurity substitution is a general strategy to study the intrinsic properties of a quantum material. However, when the target element has more than one Wyckoff position in the lattice, it is a big challenge but with extreme necessity to know the exact position and order of the occupancy of impurity atoms. Via comprehensive experimental and theoretical investigations, we establish herein the roadmap for Ni substitution in Fe3GaTe2, a van der Waals ferromagnet with the Curie temperature TC even reaching ~ 380 K. The results unambiguously reveal that in (Fe1-xNix)3GaTe2, Ni atoms initially form an van der Waals interlayer gap Ni3 sites when x < 0.1, and then gradually occupy the Fe2 sites. After replacing the Fe2 sites at x of ~ 0.75, they start to substitute for the Fe1 sites and eventually realize a full occupation at x = 1.0. Accordingly, TC and saturation magnetic moments of (Fe1-xNix)3GaTe2 both show nonlinear decrease, which is tightly tied to the Ni occupancy order as well as the different roles of Ni3, Fe1 and Fe2 sites in the spin Hamiltonian. The results not only yield fruitful insights into the essential roles of different Fe sites in producing the above room temperature high TC, but also set a paradigm for future impurity substitution study on other quantum materials.
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Submitted 12 May, 2024;
originally announced May 2024.
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Operando Analysis of Adsorption-Limited Hydrogen Oxidation Reaction at Palladium Surfaces
Authors:
Yukun Liu,
Kunmo Koo,
Zugang Mao,
Xianbiao Fu,
Xiaobing Hu,
Vinayak P. Dravid
Abstract:
Palladium (Pd) catalysts have been extensively studied for the direct synthesis of H2O through the hydrogen oxidation reaction at ambient conditions. This heterogeneous catalytic reaction not only holds considerable practical significance but also serves as a classical model for investigating fundamental mechanisms, including adsorption and reactions between adsorbates. Nonetheless, the governing…
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Palladium (Pd) catalysts have been extensively studied for the direct synthesis of H2O through the hydrogen oxidation reaction at ambient conditions. This heterogeneous catalytic reaction not only holds considerable practical significance but also serves as a classical model for investigating fundamental mechanisms, including adsorption and reactions between adsorbates. Nonetheless, the governing mechanisms and kinetics of its intermediate reaction stages under varying gas conditions remains elusive. This is attributed to the intricate interplay between adsorption, atomic diffusion, and concurrent phase transformation of catalyst. Herein, the Pd-catalyzed, water-forming hydrogen oxidation is studied, in situ, to investigate intermediate reaction stages via fluid cell transmission electron microscopy. The dynamic behaviors of water generation, associated with reversible palladium hydride formation, are captured in real time with a nanoscale spatial resolution. Our findings suggest that the hydrogen oxidation rate catalyzed by Pd is significantly affected by the sequence in which gases are introduced. Through direct evidence of electron diffraction and density functional theory calculation, we demonstrate that the hydrogen oxidation rate is limited by adsorption processes of gas precursors. These nanoscale insights help identify the optimal reaction conditions for Pd-catalyzed hydrogen oxidation, which has substantial implications for water production technologies. The developed understanding also advocates a broader exploration of analogous mechanisms in other metal-catalyzed reactions.
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Submitted 22 April, 2024;
originally announced April 2024.
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Solute strengthening and softening from screw dislocation in BCC tantalum: A first-principles study
Authors:
Jiajun Feng,
Kangzhi Zhou,
Xiaowei Zhou,
Xiao Fu,
Qiuting Luo,
Ziran Liu
Abstract:
Improving the high-temperature performance and low-temperature plasticity of tantalum (Ta) alloys is a significant scientific challenge. We employed first-principles calculations to study the interaction between screw dislocations and solute atoms in the body centered cubic (BCC) structure of Ta, with a particular focus on solid solution softening and strengthening. We analyzed the impact of vario…
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Improving the high-temperature performance and low-temperature plasticity of tantalum (Ta) alloys is a significant scientific challenge. We employed first-principles calculations to study the interaction between screw dislocations and solute atoms in the body centered cubic (BCC) structure of Ta, with a particular focus on solid solution softening and strengthening. We analyzed the impact of various solute elements on the generalized stacking fault energy (GSFE), energy barriers within the single-atom column displacement model, and their interaction with screw dislocations. The results indicate that Hf and Zr, either individually or in combination, exhibit notable solute softening effects in BCC Ta, significantly reducing GSFE, energy barriers, and interaction energies. In contrast, Nb shows relative insensitivity to solute effects, while Mo, W, and Ir demonstrate solute strengthening effects. The calculations suggest that the interaction energy between screw dislocations and solute atoms is a reliable indicator for predicting strengthening and softening effects. Additionally, we extend these predictions to ternary alloys, demonstrating that the strengthening and softening phenomena in these materials can be explained through the electronic work function at the electronic level.
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Submitted 7 April, 2024;
originally announced April 2024.
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Observation of non-volatile anomalous Nernst effect in altermagnet with collinear Néel vector
Authors:
Lei Han,
Xizhi Fu,
Wenqing He,
Yuxiang Zhu,
Jiankun Dai,
Wenfeng Yang,
Wenxuan Zhu,
Hua Bai,
Chong Chen,
Caihua Wan,
Xiufeng Han,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafas…
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Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn doping, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.
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Submitted 20 March, 2024;
originally announced March 2024.
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Ultralarge polarization in ferroelectric hafnia-based thin films
Authors:
Han Wu,
Kun Lin,
Qinghua Zhang,
Qian Yu,
Xiaoqian Fu,
Qiang Li,
Meera Cheviri,
Oswaldo Dieguez,
Shuai Xu,
Lin Gu,
Yili Cao,
Jiaou Wang,
Zhen Wang,
Yu Chen,
Huanhua Wang,
Jinxia Deng,
Jun Miao,
Xianran Xing
Abstract:
Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices. However, more robust ferroelectric properties and better understanding of the polarization mechanisms are currently needed both in technology and science. Herein, we report the properties of oxygen-deficient Hf0.5Zr0.5O2…
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Hafnia-based ferroelectrics have become a valuable class of electronic functional materials at the nanoscale, showing great potential for next-generation memory and logic devices. However, more robust ferroelectric properties and better understanding of the polarization mechanisms are currently needed both in technology and science. Herein, we report the properties of oxygen-deficient Hf0.5Zr0.5O2 films with ultralarge remanent polarization (Pr) of 387 uC cm-2 at room temperature (1 kHz). Structure characterizations identify a new ferroelectric monoclinic Pc phase in these Hf0.5Zr0.5O2 films. The in-situ STEM measurements evidence polar displacements of the oxygen atoms, which move up and down in the Pc structure under applied DC bias fields, showing a huge displacement (1.6 A). DFT calculations optimized the Pc structure and also predicted a large polarization. The coexistence of the ferroelectric monoclinic (Pc) phases and orthorhombic (Pca21) is responsible for this superior ferroelectric properties. These findings are promising for hafnia-based ferroelectric applications in integrated ferroelectric devices, energy harvesting and actuators, etc.
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Submitted 18 March, 2024;
originally announced March 2024.
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Room-temperature sub-100 nm Néel-type skyrmions in non-stoichiometric van der Waals ferromagnet $\rm Fe_{3-x}GaTe_{2}$ with ultrafast laser writability
Authors:
Zefang Li,
Huai Zhang,
Guanqi Li,
Jiangteng Guo,
Qingping Wang,
Ying Deng,
Yue Hu,
Xuange Hu,
Can Liu,
Minghui Qin,
Xi Shen,
Richeng Yu,
Xingsen Gao,
Zhimin Liao,
Junming Liu,
Zhipeng Hou,
Yimei Zhu,
Xuewen Fu
Abstract:
Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmio…
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Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmions in 2D magnets remains a formidable challenge. In this study, we target room-temperature 2D magnet $\rm Fe_3GaTe_2$ and unveil that the introduction of iron-deficient into this compound enables spatial inversion symmetry breaking, thus inducing a significant Dzyaloshinskii-Moriya interaction that brings about room-temperature Néel-type skyrmions with unprecedentedly small size. To further enhance the practical applications of this finding, we employ a homemade in-situ optical Lorentz transmission electron microscopy to demonstrate ultrafast writing of skyrmions in $\rm Fe_{3-x}GaTe_2$ using a single femtosecond laser pulse. Our results manifest the $\rm Fe_{3-x}GaTe_2$ as a promising building block for realizing skyrmion-based magneto-optical functionalities.
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Submitted 21 February, 2024;
originally announced February 2024.
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Electrical 180o switching of Néel vector in spin-splitting antiferromagnet
Authors:
Lei Han,
Xizhi Fu,
Rui Peng,
Xingkai Cheng,
Jiankun Dai,
Liangyang Liu,
Yidian Li,
Yichi Zhang,
Wenxuan Zhu,
Hua Bai,
Yongjian Zhou,
Shixuan Liang,
Chong Chen,
Qian Wang,
Xianzhe Chen,
Luyi Yang,
Yang Zhang,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However…
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Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
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Submitted 31 January, 2024;
originally announced January 2024.
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Corrosion-resistant aluminum alloy design through machine learning combined with high-throughput calculations
Authors:
Yucheng Ji,
Xiaoqian Fu,
Feng Ding,
Yongtao Xu,
Yang He,
Min Ao,
Fulai Xiao,
Dihao Chen,
Poulumi Dey,
Kui Xiao,
Jingli Ren,
Xiaogang Li,
Chaofang Dong
Abstract:
Efficiently designing lightweight alloys with combined high corrosion resistance and mechanical properties remains an enduring topic in materials engineering. To this end, machine learning (ML) coupled ab-initio calculations is proposed within this study. Due to the inadequate accuracy of conventional stress-strain ML models caused by corrosion factors, a novel reinforcement self-learning ML algor…
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Efficiently designing lightweight alloys with combined high corrosion resistance and mechanical properties remains an enduring topic in materials engineering. To this end, machine learning (ML) coupled ab-initio calculations is proposed within this study. Due to the inadequate accuracy of conventional stress-strain ML models caused by corrosion factors, a novel reinforcement self-learning ML algorithm (accuracy R2 >0.92) is developed. Then, a strategy that integrates ML models, calculated energetics and mechanical moduli is implemented to optimize the Al alloys. Next, this Computation Designed Corrosion-Resistant Al alloy is fabricated that verified the simulation. The performance (elongation reaches ~30%) is attributed to the H-captured Al-Sc-Cu phases (-1.44 eV H-1) and Cu-modified η/η' precipitation inside the grain boundaries (GBs). The developed Al-Mg-Zn-Cu interatomic potential (energy accuracy 6.50 meV atom-1) proves the cracking resistance of the GB region enhanced by Cu-modification. Conceptually, our strategy is of practical importance for designing new alloys exhibiting corrosion resistance and mechanical properties.
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Submitted 26 December, 2023;
originally announced December 2023.
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Hydrogel modified evaporation interface for highly stable membrane distillation
Authors:
Yanni Ma,
Zehua Yu,
Xifan Fu,
Zhi Huang,
Tenghui Qiu,
Na Zhao,
Huidong Liu,
Kang Liu
Abstract:
Surface effect of low-surface-tension contaminants accumulating at the evaporation surface can easily induce membrane wetting in the application of membrane distillation, especially in hypersaline scenarios. In this work, we propose a novel strategy to eliminate the surface effect and redistribute contaminants at the evaporation interface with simply incorporating a layer of hydrogel. The as-fabri…
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Surface effect of low-surface-tension contaminants accumulating at the evaporation surface can easily induce membrane wetting in the application of membrane distillation, especially in hypersaline scenarios. In this work, we propose a novel strategy to eliminate the surface effect and redistribute contaminants at the evaporation interface with simply incorporating a layer of hydrogel. The as-fabricated composite membrane exhibits remarkable stability, even when exposed to extreme conditions, such as a salt concentration of 5M and surfactant concentration of 8 mM. The breakthrough pressure of the membrane is as high as 20 bars in the presence of surfactants, surpassing commercial hydrophobic membranes by one to two magnitudes. Combined study of density functional theory and molecular dynamics simulations reveals the important role of hydrogel-surfactant interaction in suppressing the surface effect. As a proof of concept, we also demonstrate the stable performance of the membrane in processing synthetic wastewater containing surfactants of 144 mg L-1, mineral oils of 1g L-1 and NaCl of 192 g L-1, showing potential of the membrane in addressing challenges of hypersaline water treatment and zero liquid discharge processes.
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Submitted 5 December, 2023;
originally announced December 2023.
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MatterGen: a generative model for inorganic materials design
Authors:
Claudio Zeni,
Robert Pinsler,
Daniel Zügner,
Andrew Fowler,
Matthew Horton,
Xiang Fu,
Sasha Shysheya,
Jonathan Crabbé,
Lixin Sun,
Jake Smith,
Bichlien Nguyen,
Hannes Schulz,
Sarah Lewis,
Chin-Wei Huang,
Ziheng Lu,
Yichi Zhou,
Han Yang,
Hongxia Hao,
Jielan Li,
Ryota Tomioka,
Tian Xie
Abstract:
The design of functional materials with desired properties is essential in driving technological advances in areas like energy storage, catalysis, and carbon capture. Generative models provide a new paradigm for materials design by directly generating entirely novel materials given desired property constraints. Despite recent progress, current generative models have low success rate in proposing s…
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The design of functional materials with desired properties is essential in driving technological advances in areas like energy storage, catalysis, and carbon capture. Generative models provide a new paradigm for materials design by directly generating entirely novel materials given desired property constraints. Despite recent progress, current generative models have low success rate in proposing stable crystals, or can only satisfy a very limited set of property constraints. Here, we present MatterGen, a model that generates stable, diverse inorganic materials across the periodic table and can further be fine-tuned to steer the generation towards a broad range of property constraints. To enable this, we introduce a new diffusion-based generative process that produces crystalline structures by gradually refining atom types, coordinates, and the periodic lattice. We further introduce adapter modules to enable fine-tuning towards any given property constraints with a labeled dataset. Compared to prior generative models, structures produced by MatterGen are more than twice as likely to be novel and stable, and more than 15 times closer to the local energy minimum. After fine-tuning, MatterGen successfully generates stable, novel materials with desired chemistry, symmetry, as well as mechanical, electronic and magnetic properties. Finally, we demonstrate multi-property materials design capabilities by proposing structures that have both high magnetic density and a chemical composition with low supply-chain risk. We believe that the quality of generated materials and the breadth of MatterGen's capabilities represent a major advancement towards creating a universal generative model for materials design.
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Submitted 29 January, 2024; v1 submitted 6 December, 2023;
originally announced December 2023.
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Generalization of Graph-Based Active Learning Relaxation Strategies Across Materials
Authors:
Xiaoxiao Wang,
Joseph Musielewicz,
Richard Tran,
Sudheesh Kumar Ethirajan,
Xiaoyan Fu,
Hilda Mera,
John R. Kitchin,
Rachel C. Kurchin,
Zachary W. Ulissi
Abstract:
Although density functional theory (DFT) has aided in accelerating the discovery of new materials, such calculations are computationally expensive, especially for high-throughput efforts. This has prompted an explosion in exploration of machine learning assisted techniques to improve the computational efficiency of DFT. In this study, we present a comprehensive investigation of the broader applica…
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Although density functional theory (DFT) has aided in accelerating the discovery of new materials, such calculations are computationally expensive, especially for high-throughput efforts. This has prompted an explosion in exploration of machine learning assisted techniques to improve the computational efficiency of DFT. In this study, we present a comprehensive investigation of the broader application of Finetuna, an active learning framework to accelerate structural relaxation in DFT with prior information from Open Catalyst Project pretrained graph neural networks. We explore the challenges associated with out-of-domain systems: alcohol ($C_{>2}$) on metal surfaces as larger adsorbates, metal-oxides with spin polarization, and three-dimensional (3D) structures like zeolites and metal-organic-frameworks. By pre-training machine learning models on large datasets and fine-tuning the model along the simulation, we demonstrate the framework's ability to conduct relaxations with fewer DFT calculations. Depending on the similarity of the test systems to the training systems, a more conservative querying strategy is applied. Our best-performing Finetuna strategy reduces the number of DFT single-point calculations by 80% for alcohols and 3D structures, and 42% for oxide systems.
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Submitted 3 November, 2023;
originally announced November 2023.
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MOFDiff: Coarse-grained Diffusion for Metal-Organic Framework Design
Authors:
Xiang Fu,
Tian Xie,
Andrew S. Rosen,
Tommi Jaakkola,
Jake Smith
Abstract:
Metal-organic frameworks (MOFs) are of immense interest in applications such as gas storage and carbon capture due to their exceptional porosity and tunable chemistry. Their modular nature has enabled the use of template-based methods to generate hypothetical MOFs by combining molecular building blocks in accordance with known network topologies. However, the ability of these methods to identify t…
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Metal-organic frameworks (MOFs) are of immense interest in applications such as gas storage and carbon capture due to their exceptional porosity and tunable chemistry. Their modular nature has enabled the use of template-based methods to generate hypothetical MOFs by combining molecular building blocks in accordance with known network topologies. However, the ability of these methods to identify top-performing MOFs is often hindered by the limited diversity of the resulting chemical space. In this work, we propose MOFDiff: a coarse-grained (CG) diffusion model that generates CG MOF structures through a denoising diffusion process over the coordinates and identities of the building blocks. The all-atom MOF structure is then determined through a novel assembly algorithm. Equivariant graph neural networks are used for the diffusion model to respect the permutational and roto-translational symmetries. We comprehensively evaluate our model's capability to generate valid and novel MOF structures and its effectiveness in designing outstanding MOF materials for carbon capture applications with molecular simulations.
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Submitted 16 October, 2023;
originally announced October 2023.
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Two-dimensional germanium islands with Dirac signature on Ag2Ge surface alloy
Authors:
Jiaqi Deng,
Gulnigar Ablat,
Yumu Yang,
Xiaoshuai Fu,
Qilong Wu,
Ping Li,
Li Zhang,
Ali Safaei,
Lijie Zhang,
Zhihui Qin
Abstract:
Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is to fabricate 2D Dirac materials hosting Dirac electrons. Here, monolayer germanene is successfully fabricated on a Ag2Ge surface alloy. Scanning tunneling spectr…
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Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is to fabricate 2D Dirac materials hosting Dirac electrons. Here, monolayer germanene is successfully fabricated on a Ag2Ge surface alloy. Scanning tunneling spectroscopy measurements revealed a linear energy dispersion relation. The latter was supported by density functional theory calculations. These results demonstrate that monolayer germanene can be realistically fabricated on a Ag2Ge surface alloy. The finding opens the door to exploration and study of 2D Dirac material physics and device applications.
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Submitted 24 August, 2023;
originally announced August 2023.
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Uniaxial-Strain Tuning of the Intertwined Orders in BaFe$_2$(As$_{1-x}$P$_{x}$)$_2$
Authors:
Zinan Zhao,
Ding Hu,
Xue Fu,
Kaijuan Zhou,
Yanhong Gu,
Guotai Tan,
Xingye Lu,
Pengcheng Dai
Abstract:
An experimental determination of electronic phase diagrams of high-transition temperature (high-$T_c$) superconductors forms the basis for a microscopic understanding of unconventional superconductivity. For most high-$T_c$ superconductors, the electronic phase diagrams are established through partial chemical substitution, which also induces lattice disorder. Here we show that symmetry-specific u…
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An experimental determination of electronic phase diagrams of high-transition temperature (high-$T_c$) superconductors forms the basis for a microscopic understanding of unconventional superconductivity. For most high-$T_c$ superconductors, the electronic phase diagrams are established through partial chemical substitution, which also induces lattice disorder. Here we show that symmetry-specific uniaxial strain can be used to study electronic phases in iron-based superconductors, composed of two-dimensional nearly square iron lattice planed separated by other elements. By applying tunable uniaxial strain along different high symmetry directions and carrying out transport measurements, we establish strain-tuning dependent electronic nematicity, antiferromagnetic (AF) order, and superconductivity of BaFe$_2$(As$_{1-x}$P$_{x}$)$_2$ superconductor. We find that uniaxial strain along the nearest Fe-Fe direction can dramatically tune the AF order and superconductivity, producing an electronic phase diagram clearly different from the chemical substitution-induced one. Our results thus establish strain tuning as a way to study the intertwined orders in correlated electron materials without using chemical substitution.
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Submitted 7 May, 2023;
originally announced May 2023.
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Exotic single-photon and enhanced deep-level emissions in hBN strain superlattice
Authors:
Xiang Chen,
Xinxin Yue,
Lifu Zhang,
Xiaodan Xu,
Fang Liu,
Min Feng,
Zhenpeng Hu,
Yuan Yan,
Jacob Scheuer,
Xuewen Fu
Abstract:
The peculiar defect-related photon emission processes in 2D hexagonal boron nitride (hBN) have become a topic of intense research due to their potential applications in quantum information and sensing technologies. Recent efforts have focused on activating and modulating the defect energy levels in hBN by methods that can be integrated on a chip, and understanding the underlying physical mechanism…
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The peculiar defect-related photon emission processes in 2D hexagonal boron nitride (hBN) have become a topic of intense research due to their potential applications in quantum information and sensing technologies. Recent efforts have focused on activating and modulating the defect energy levels in hBN by methods that can be integrated on a chip, and understanding the underlying physical mechanism. Here, we report on exotic single photon and enhanced deep-level emissions in 2D hBN strain superlattice, which is fabricated by transferring multilayer hBN onto hexagonal close-packed silica spheres on silica substrate. We realize effective activation of the single photon emissions (SPEs) in the multilayer hBN at the positions that are in contact with the apex of the SiO2 spheres. At these points, the local tensile strain induced blue-shift of the SPE is found to be up to 12 nm. Furthermore, high spatial resolution cathodoluminescence measurments show remarkable strain-enhanced deep-level (DL) emissions in the multilayer hBN with the emission intensity distribution following the periodic hexagonal pattern of the strain superlattice. The maximum DL emission enhancement is up to 350% with a energy redshift of 6 nm. Our results provide a simple on-chip compatible method for activating and tuning the defect-related photon emissions in multilayer hBN, demonstrating the potential of hBN strain superlattice as a building block for future on-chip quantum nanophotonic devices.
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Submitted 15 February, 2023;
originally announced February 2023.
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Virtual Node Graph Neural Network for Full Phonon Prediction
Authors:
Ryotaro Okabe,
Abhijatmedhi Chotrattanapituk,
Artittaya Boonkird,
Nina Andrejevic,
Xiang Fu,
Tommi S. Jaakkola,
Qichen Song,
Thanh Nguyen,
Nathan Drucker,
Sai Mu,
Bolin Liao,
Yongqiang Cheng,
Mingda Li
Abstract:
The structure-property relationship plays a central role in materials science. Understanding the structure-property relationship in solid-state materials is crucial for structure design with optimized properties. The past few years witnessed remarkable progress in correlating structures with properties in crystalline materials, such as machine learning methods and particularly graph neural network…
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The structure-property relationship plays a central role in materials science. Understanding the structure-property relationship in solid-state materials is crucial for structure design with optimized properties. The past few years witnessed remarkable progress in correlating structures with properties in crystalline materials, such as machine learning methods and particularly graph neural networks as a natural representation of crystal structures. However, significant challenges remain, including predicting properties with complex unit cells input and material-dependent, variable-length output. Here we present the virtual node graph neural network to address the challenges. By developing three types of virtual node approaches - the vector, matrix, and momentum-dependent matrix virtual nodes, we achieve direct prediction of $Γ$-phonon spectra and full dispersion only using atomic coordinates as input. We validate the phonon bandstructures on various alloy systems, and further build a $Γ$-phonon database containing over 146,000 materials in the Materials Project. Our work provides an avenue for rapid and high-quality prediction of phonon spectra and bandstructures in complex materials, and enables materials design with superior phonon properties for energy applications. The virtual node augmentation of graph neural networks also sheds light on designing other functional properties with a new level of flexibility.
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Submitted 5 January, 2023;
originally announced January 2023.
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Origami-controlled strain engineering of tunable flat bands and correlated states in folded graphene
Authors:
Li-Zhen Yang,
Ling-Hui Tong,
Cheng-Sheng Liao,
Qilong Wu,
Xiaoshuai Fu,
Yue-Ying Zhou,
Yuan Tian,
Li Zhang,
Lijie Zhang,
Meng-Qiu Cai,
Lin He,
Zhihui Qin,
Long-Jing Yin
Abstract:
Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene, by nano origami-controlled strain engineering, and discover correlated states in this system. Via tearing and folding graphene monolayer at arbitrary step edges…
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Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene, by nano origami-controlled strain engineering, and discover correlated states in this system. Via tearing and folding graphene monolayer at arbitrary step edges with scanning tunneling microscope manipulation, we create strain-induced pseudo-magnetic fields as well as resulting flat electronic bands in the curved edges of folded graphene. We show that the intensity of the pseudo-magnetic field can be readily tuned by changing the width of the folding edge due to the edge-width-dependent lattice deformation, leading to the well adjustability of the geometry of flat bands in folded graphene. Furthermore, by creating expected dispersionless flat bands using this technique, the correlation-induced splits of flat bands are successfully observed in the density of states when these bands are partially filled. Our experiment provides a feasible and effective pathway to engineer the system with tunable flat band structures, and establishes a new platform that can be used to realize devisable strain and interaction induced quantum phases.
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Submitted 21 April, 2022;
originally announced April 2022.
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Stochastic threshold in cell size control
Authors:
Liang Luo,
Yang Bai,
Xiongfei Fu
Abstract:
Classic models of cell size control consider cells divide while reaching a threshold, e.g. size, age, or size extension. The molecular basis of the threshold involves multiple layers of regulation as well as gene noises. In this work, we study cell cycle as first-passage problem with stochastic threshold and discover such stochasticity affects the inter-division statistics, which bewilders the cri…
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Classic models of cell size control consider cells divide while reaching a threshold, e.g. size, age, or size extension. The molecular basis of the threshold involves multiple layers of regulation as well as gene noises. In this work, we study cell cycle as first-passage problem with stochastic threshold and discover such stochasticity affects the inter-division statistics, which bewilders the criteria to distinguish the types of size control models. The analytic results show the autocorrelation in the threshold can drive a sizer model to the adder-like and even timer-like inter-division statistics, which is supported by simulations. Following the picture that the autocorrelation in the threshold can propagate to the inter-division statistics, we further show that the adder model can be driven to the timer-like one by positive autocorrelated threshold, and even to the sizer-like one when the threshold is negatively autocorrelated. This work highlights the importance to examine gene noise in size control.
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Submitted 26 April, 2022; v1 submitted 6 March, 2022;
originally announced March 2022.
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Crystal Diffusion Variational Autoencoder for Periodic Material Generation
Authors:
Tian Xie,
Xiang Fu,
Octavian-Eugen Ganea,
Regina Barzilay,
Tommi Jaakkola
Abstract:
Generating the periodic structure of stable materials is a long-standing challenge for the material design community. This task is difficult because stable materials only exist in a low-dimensional subspace of all possible periodic arrangements of atoms: 1) the coordinates must lie in the local energy minimum defined by quantum mechanics, and 2) global stability also requires the structure to foll…
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Generating the periodic structure of stable materials is a long-standing challenge for the material design community. This task is difficult because stable materials only exist in a low-dimensional subspace of all possible periodic arrangements of atoms: 1) the coordinates must lie in the local energy minimum defined by quantum mechanics, and 2) global stability also requires the structure to follow the complex, yet specific bonding preferences between different atom types. Existing methods fail to incorporate these factors and often lack proper invariances. We propose a Crystal Diffusion Variational Autoencoder (CDVAE) that captures the physical inductive bias of material stability. By learning from the data distribution of stable materials, the decoder generates materials in a diffusion process that moves atomic coordinates towards a lower energy state and updates atom types to satisfy bonding preferences between neighbors. Our model also explicitly encodes interactions across periodic boundaries and respects permutation, translation, rotation, and periodic invariances. We significantly outperform past methods in three tasks: 1) reconstructing the input structure, 2) generating valid, diverse, and realistic materials, and 3) generating materials that optimize a specific property. We also provide several standard datasets and evaluation metrics for the broader machine learning community.
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Submitted 14 March, 2022; v1 submitted 12 October, 2021;
originally announced October 2021.
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Anomalous nematic-to-stripe phase transition driven by in-plane magnetic fields
Authors:
X. Fu,
Q. Shi,
M. A. Zudov,
G. C. Gardner,
J. D. Watson,
M. J. Manfra,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
Anomalous nematic states, recently discovered in ultraclean two-dimensional electron gas, emerge from quantum Hall stripe phases upon further cooling. These states are hallmarked by a local minimum (maximum) in the hard (easy) longitudinal resistance and by an incipient plateau in the Hall resistance in nearly half-filled Landau levels. Here, we demonstrate that a modest in-plane magnetic field, a…
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Anomalous nematic states, recently discovered in ultraclean two-dimensional electron gas, emerge from quantum Hall stripe phases upon further cooling. These states are hallmarked by a local minimum (maximum) in the hard (easy) longitudinal resistance and by an incipient plateau in the Hall resistance in nearly half-filled Landau levels. Here, we demonstrate that a modest in-plane magnetic field, applied either along $\left < 110 \right >$ or $\left < 1\bar10 \right >$ crystal axis of GaAs, destroys anomalous nematic states and restores quantum Hall stripe phases aligned along their native $\left < 110 \right >$ direction. These findings confirm that anomalous nematic states are distinct from other ground states and will assist future theories to identify their origin.
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Submitted 24 July, 2021;
originally announced July 2021.
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Master equation approach to the stochastic accumulation dynamics of bacterial cell cycle
Authors:
Liang Luo,
Yang Bai,
Xiongfei Fu
Abstract:
The mechanism of bacterial cell size control has been a mystery for decades, which involves the well-coordinated growth and division in the cell cycle. The revolutionary modern techniques of microfluidics and the advanced live imaging analysis techniques allow long term observations and high-throughput analysis of bacterial growth on single cell level, promoting a new wave of quantitative investig…
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The mechanism of bacterial cell size control has been a mystery for decades, which involves the well-coordinated growth and division in the cell cycle. The revolutionary modern techniques of microfluidics and the advanced live imaging analysis techniques allow long term observations and high-throughput analysis of bacterial growth on single cell level, promoting a new wave of quantitative investigations on this puzzle. Taking the opportunity, this theoretical study aims to clarify the stochastic nature of bacterial cell size control under the assumption of the accumulation mechanism, which is favoured by recent experiments on species of bacteria. Via the master equation approach with properly chosen boundary conditions, the distributions concerned in cell size control are estimated and are confirmed by experiments. In this analysis, the inter-generation Green's function is analytically evaluated as the key to bridge two kinds of statistics used in batch-culture and mother machine experiments. This framework allows us to quantify the noise level in growth and accumulation according to experimental data. As a consequence of non-Gaussian noises of the added sizes, the non-equilibrium nature of bacterial cell size homeostasis is predicted, of which the biological meaning requires further investigation.
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Submitted 29 July, 2021; v1 submitted 7 March, 2021;
originally announced March 2021.
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Hidden Quantum Hall Stripes in Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As Quantum Wells
Authors:
X. Fu,
Yi Huang,
Q. Shi,
B. I. Shklovskii,
M. A. Zudov,
G. C. Gardner,
M. J. Manfra
Abstract:
We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing between the conventional stripe phases (lower $N$) and the isotropic liquid phases (higher $N$), where resistivity decreases as $1/N$, these hQHS phases exhibit…
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We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing between the conventional stripe phases (lower $N$) and the isotropic liquid phases (higher $N$), where resistivity decreases as $1/N$, these hQHS phases exhibit isotropic and $N$-independent resistivity. Using the experimental phase diagram we establish that the stripe phases are more robust than theoretically predicted, calling for improved theoretical treatment. We also show that, unlike conventional stripe phases, the hQHS phases do not occur in ultrahigh mobility GaAs quantum wells, but are likely to be found in other systems.
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Submitted 15 November, 2020;
originally announced November 2020.
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Probing the pathway of an ultrafast structural phase transition to illuminate the transition mechanism in Cu2S
Authors:
Junjie Li,
Kai Sun,
Jun Li,
Qingping Meng,
Xuewen Fu,
Wei-Guo Yin,
Deyu Lu,
Yan Li,
Marcus Babzien,
Mikhail Fedurin,
Christina Swinson,
Robert Malone,
Mark Palmer,
Leanne Mathurin,
Ryan Mason,
Jingyi Chen,
Robert M. Konik,
Robert J. Cava,
Yimei Zhu,
Jing Tao
Abstract:
Disentangling the primary order parameter from secondary order parameters in phase transitions is critical to the interpretation of the transition mechanisms in strongly correlated systems and quantum materials. Here we present a study of structural phase transition pathways in superionic Cu2S nanocrystals that exhibit intriguing properties. Utilizing ultrafast electron diffraction techniques sens…
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Disentangling the primary order parameter from secondary order parameters in phase transitions is critical to the interpretation of the transition mechanisms in strongly correlated systems and quantum materials. Here we present a study of structural phase transition pathways in superionic Cu2S nanocrystals that exhibit intriguing properties. Utilizing ultrafast electron diffraction techniques sensitive in both momentum-space and the time-domain, we distinguish the dynamics of crystal symmetry breaking and lattice expansion in this system. We are able to follow the transient states along the transition pathway and so observe the dynamics of both the primary and secondary order parameters. Based on these observations we argue that the mechanism of the structural phase transition in Cu2S is dominated by the electron-phonon coupling. This mechanism advances the understanding from previous results where the focus was solely on dynamic observations of the lattice expansion.
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Submitted 2 November, 2020;
originally announced November 2020.
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Field-Programmable Topological Array: Framework and Case-Studies
Authors:
G. -Y. Huang,
B. Li,
X. -F. Yi,
J. -B. Fu,
X. Fu,
X. -G. Qiang,
P. Xu,
J. -J. Wu,
C. -L. Yu,
P. Kotetes,
M. -T. Deng
Abstract:
Engineering composite materials and devices with desired topological properties is accelerating the development of topological physics and its applications. Approaches of realizing novel topological hybrids, including in-situ epitaxy growth, planar/layered superlattices, and assembled (artificial) atom/dot arrays, etc., endow the topological systems with a substantial degree of control and tunabil…
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Engineering composite materials and devices with desired topological properties is accelerating the development of topological physics and its applications. Approaches of realizing novel topological hybrids, including in-situ epitaxy growth, planar/layered superlattices, and assembled (artificial) atom/dot arrays, etc., endow the topological systems with a substantial degree of control and tunability. Here, we propose a framework for realizing a field-programmable topological array (FPTA) that enables the implementation of dynamically reconfigurable topological platforms. FPTA allows for the independent, simultaneous, and local programmability of the various platform properties, such as the electromagnetic field, the spin-orbit field, and the superconducting order parameter. To demonstrate the effectiveness of the FPTA in rendering the system topologically-nontrivial and implementing non-Abelian manipulations, we simulate their operation in various case-studies. Our framework provides a playground for unearthing novel topological phases using components of high feasibility and sets the guidelines for run-time dynamic reconfiguration which is crucial for high-performance topological electronic circuits and quantum computing.
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Submitted 5 October, 2020;
originally announced October 2020.
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Direct visualization of electromagnetic wave dynamics by laser-free ultrafast electron microscopy
Authors:
Xuewen Fu,
Erdong Wang,
Yubin Zhao,
Ao Liu,
Eric Montgomery,
Vikrant J. Gokhale,
Jason J. Gorman,
Chungguang Jing,
June W. Lau,
Yimei Zhu
Abstract:
Integrating femtosecond (fs) lasers to electron microscopies has enabled direct imaging of transient structures and morphologies of materials in real time and space, namely, ultrafast electron microscopy (UEM). Here we report the development of a laser-free UEM offering the same capability of real-time imaging with high spatiotemporal resolutions but without requiring expensive fs lasers and intri…
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Integrating femtosecond (fs) lasers to electron microscopies has enabled direct imaging of transient structures and morphologies of materials in real time and space, namely, ultrafast electron microscopy (UEM). Here we report the development of a laser-free UEM offering the same capability of real-time imaging with high spatiotemporal resolutions but without requiring expensive fs lasers and intricate instrumental modifications. We create picosecond electron pulses for probing dynamic events by chopping a continuous beam with a radiofrequency (RF)-driven pulser, where the repetition rate of the electron pulses is tunable from 100 MHz to 12 GHz. A same broadband of electromagnetic wave is enabled for sample excitation. As a first application, we studied the GHz electromagnetic wave propagation dynamics in an interdigitated comb structure which is one of the basic building blocks for RF micro-electromechanical systems. A series of pump-probe images reveals, on nanometer space and picosecond time scales, the transient oscillating electromagnetic field around the tines of the combs, and time-resolved polarization, amplitude, and nonlinear local field enhancement. The success of this study demonstrates the feasibility of the low-cost laser-free UEM in real-space visualizing of dynamics for many research fields, especially the electrodynamics in devices associated with information processing technology.
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Submitted 4 June, 2020;
originally announced June 2020.
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Nanoscale-femtosecond dielectric response of Mott insulators captured by two-colour near-field ultrafast electron microscopy
Authors:
Xuewen Fu,
Francesco Barantani,
Simone Gargiulo,
Ivan Madan,
Gabriele Berruto,
Thomas Lagrange,
Lei Jin,
Junqiao Wu,
G. M. Vanacore,
Fabrizio Carbone,
Yimei Zhu
Abstract:
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of strongly-correlated systems. Here, we use two-colour near-field ultrafast electron microscopy to photo-induce the insulator-to-metal transition in a single VO2 nanowire and…
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Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of strongly-correlated systems. Here, we use two-colour near-field ultrafast electron microscopy to photo-induce the insulator-to-metal transition in a single VO2 nanowire and probe the ensuing electronic dynamics with combined nanometer-femtosecond resolution. We take advantage of a femtosecond temporal gating of the electron pulse mediated by an infrared laser pulse, and exploit the sensitivity of inelastic electron-light scattering to changes in the material dielectric function. By spatially mapping the near-field dynamics of an individual nanowire of VO2, we observe that ultrafast photo-doping drives the system into a metallic state on a time scale of about 150 fs without yet perturbing the crystalline lattice. Due to the high versatility and sensitivity of the electron probe, our method would allow capturing the electronic dynamics of a wide range of nanoscale materials with ultimate spatio-temporal resolution.
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Submitted 4 June, 2020;
originally announced June 2020.
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Anomalous Nematic States in High Half-Filled Landau Levels
Authors:
X. Fu,
Q. Shi,
M. A. Zudov,
G. C. Gardner,
J. D. Watson,
M. J. Manfra,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs are a maximum (minimum) in a longitudinal resistance $R_{xx}$ ($R_{yy}$) and a non-quantized Hall resistance $R_H$. Here, we report on emergent minima (maxima)…
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It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs are a maximum (minimum) in a longitudinal resistance $R_{xx}$ ($R_{yy}$) and a non-quantized Hall resistance $R_H$. Here, we report on emergent minima (maxima) in $R_{xx}$ ($R_{yy}$) and plateau-like features in $R_H$ in half-filled $N \ge 3$ Landau levels. Remarkably, these unexpected features develop at temperatures considerably lower than the onset temperature of QHSs, suggesting a new ground state.
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Submitted 11 February, 2020; v1 submitted 10 February, 2020;
originally announced February 2020.
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Parallel convolution processing using an integrated photonic tensor core
Authors:
Johannes Feldmann,
Nathan Youngblood,
Maxim Karpov,
Helge Gehring,
Xuan Li,
Maik Stappers,
Manuel Le Gallo,
Xin Fu,
Anton Lukashchuk,
Arslan Raja,
Junqiu Liu,
David Wright,
Abu Sebastian,
Tobias Kippenberg,
Wolfram Pernice,
Harish Bhaskaran
Abstract:
With the proliferation of ultra-high-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence, the world is generating exponentially increasing amounts of data - data that needs to be processed in a fast, efficient and smart way. These developments are pushing the limits of existing computing paradigms, and highly parallelized, fast and scalable hardware…
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With the proliferation of ultra-high-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence, the world is generating exponentially increasing amounts of data - data that needs to be processed in a fast, efficient and smart way. These developments are pushing the limits of existing computing paradigms, and highly parallelized, fast and scalable hardware concepts are becoming progressively more important. Here, we demonstrate a computational specific integrated photonic tensor core - the optical analog of an ASIC-capable of operating at Tera-Multiply-Accumulate per second (TMAC/s) speeds. The photonic core achieves parallelized photonic in-memory computing using phase-change memory arrays and photonic chip-based optical frequency combs (soliton microcombs). The computation is reduced to measuring the optical transmission of reconfigurable and non-resonant passive components and can operate at a bandwidth exceeding 14 GHz, limited only by the speed of the modulators and photodetectors. Given recent advances in hybrid integration of soliton microcombs at microwave line rates, ultra-low loss silicon nitride waveguides, and high speed on-chip detectors and modulators, our approach provides a path towards full CMOS wafer-scale integration of the photonic tensor core. While we focus on convolution processing, more generally our results indicate the major potential of integrated photonics for parallel, fast, and efficient computational hardware in demanding AI applications such as autonomous driving, live video processing, and next generation cloud computing services.
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Submitted 12 October, 2020; v1 submitted 1 February, 2020;
originally announced February 2020.
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Efficient Green Emission from Edge States in Graphene Perforated by Nitrogen Plasma Treatment
Authors:
N N Kovaleva,
D Chvostova,
Z Potůček,
H D Cho,
Xiao Fu,
L Fekete,
J Pokorny,
Z Bryknar,
K I Kugel,
A Dejneka,
T W Kang,
Gennady N Panin,
F V Kusmartsev
Abstract:
Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects…
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Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects on exposure to plasma. Here, we discovered that bilayer CVD graphene treated with nitrogen plasma exhibits efficient UV-green-red emission, where the excitation at 250 nm leads to photoluminescence with the peaks at 390, 470, and 620 nm, respectively. By using Raman scattering and spectroscopic ellipsometry, we investigated doping effects induced by oxygen or nitrogen plasma on the optical properties of single- and bilayer CVD graphene. The surface morphology of the samples was studied by atomic force microscopy. It is revealed that the top sheet of bilayer graphene becomes perforated after the treatment by nitrogen plasma. Our comprehensive study indicates that the dominant green emission is associated with the edge defect structure of perforated graphene filled with nitrogen. The discovered efficient emission appearing in nitrogen plasma treated perforated graphene may have a significant potential for the development of advanced optoelectronic materials.
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Submitted 19 November, 2019;
originally announced November 2019.
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Resistivity anisotropy of quantum Hall stripe phases
Authors:
Michael Sammon,
Xiaojun Fu,
Yi Huang,
Michael A. Zudov,
Boris I. Shklovskii,
Geoff C. Gardner,
John D. Watson,
Michael J. Manfra,
K. W. Baldwin,
Loren N. Pfeiffer,
K. W. West
Abstract:
Quantum Hall stripe phases near half-integer filling factors $ν\ge 9/2$ were predicted by Hartree-Fock (HF) theory and confirmed by discoveries of giant resistance anisotropies in high-mobility two-dimensional electron gases. A theory of such anisotropy was proposed by MacDonald and Fisher, although they used parameters whose dependencies on the filling factor, electron density, and mobility remai…
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Quantum Hall stripe phases near half-integer filling factors $ν\ge 9/2$ were predicted by Hartree-Fock (HF) theory and confirmed by discoveries of giant resistance anisotropies in high-mobility two-dimensional electron gases. A theory of such anisotropy was proposed by MacDonald and Fisher, although they used parameters whose dependencies on the filling factor, electron density, and mobility remained unspecified. Here, we fill this void by calculating the hard-to-easy resistivity ratio as a function of these three variables. Quantitative comparison with experiment yields very good agreement which we view as evidence for the "plain vanilla" smectic stripe HF phases.
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Submitted 28 November, 2019; v1 submitted 5 October, 2019;
originally announced October 2019.
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Two- and three-electron bubbles in Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells
Authors:
X. Fu,
Q. Shi,
M. A. Zudov,
G. C. Gardner,
J. D. Watson,
M. J. Manfra
Abstract:
We report on transport signatures of eight distinct bubble phases in the $N=3$ Landau level of a Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum well with $x = 0.0015$. These phases occur near partial filling factors $ν^\star \approx 0.2\,(0.8)$ and $ν^\star \approx 0.3\,(0.7)$ and have $M = 2$ and $M = 3$ electrons (holes) per bubble, respectively. We speculate that a small amount of alloy…
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We report on transport signatures of eight distinct bubble phases in the $N=3$ Landau level of a Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum well with $x = 0.0015$. These phases occur near partial filling factors $ν^\star \approx 0.2\,(0.8)$ and $ν^\star \approx 0.3\,(0.7)$ and have $M = 2$ and $M = 3$ electrons (holes) per bubble, respectively. We speculate that a small amount of alloy disorder in our sample helps to distinguish these broken symmetry states in low-temperature transport measurements.
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Submitted 5 April, 2019;
originally announced April 2019.
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Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells
Authors:
X. Fu,
Q. Shi,
M. A. Zudov,
Y. J. Chung,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left < 1\bar{1}0 \right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along…
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We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left < 1\bar{1}0 \right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along $\left < 110 \right >$ direction and can be reoriented only perpendicular to $B_{||}$. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to $B_{||}$, while quantum confinement of the 2DEG likely plays an important role.
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Submitted 5 April, 2019;
originally announced April 2019.
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Effect of illumination on quantum lifetime in GaAs quantum wells
Authors:
X. Fu,
A. Riedl,
M. Borisov,
M. A. Zudov,
J. D. Watson,
G. Gardner,
M. J. Manfra,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We…
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Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.
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Submitted 5 April, 2019;
originally announced April 2019.
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Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells
Authors:
X. Fu,
M. D. Borisov,
M. A. Zudov,
Q. Qian,
J. D. Watson,
M. J. Manfra
Abstract:
We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe…
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We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.
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Submitted 5 April, 2019;
originally announced April 2019.
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Optical Manipulation of Magnetic Vortex Visualized in situ by 4D Electron Microscopy
Authors:
Xuewen Fu,
Shawn D. Pollard,
Bin Chen,
Byung-Kuk Yoo,
Hyunsoo Yang,
Yimei Zhu
Abstract:
Understanding the fundamental dynamics of topological vortex and antivortex naturally formed in micro/nanoscale ferromagnetic building blocks under external perturbations is crucial to magnetic vortex based information processing and spintronic devices. All previous studies have focused on magnetic vortex-core switching via external magnetic fields, spin-polarized currents, or spin waves, which ha…
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Understanding the fundamental dynamics of topological vortex and antivortex naturally formed in micro/nanoscale ferromagnetic building blocks under external perturbations is crucial to magnetic vortex based information processing and spintronic devices. All previous studies have focused on magnetic vortex-core switching via external magnetic fields, spin-polarized currents, or spin waves, which have largely prohibited the investigation of novel spin configurations that could emerge from the ground states in ferromagnetic disks and their underlying dynamics. Here, we report in situ visualization of femtosecond laser quenching induced magnetic vortex change in various symmetric ferromagnetic Permalloy disks by Lorentz phase imaging using 4D electron microscopy. Besides the switching of magnetic vortex chirality and polarity, we observed with distinct occurrence frequencies a plenitude of complex magnetic structures that have never been observed by magnetic field or current assisted switching. These complex magnetic structures consist of a number of newly created topological magnetic defects (vortex and antivortex) strictly conserving the topological winding number, demonstrating the direct impact of topological invariant on the magnetization dynamics in ferromagnetic disks. Their spin configurations show mirror or rotation symmetry due to the geometrical confinement of the disks. Combined micromagnetic simulations with the experimental observations reveal the underlying magnetization dynamics and formation mechanism of the optical quenching induced complex magnetic structures. Their distinct occurrence rates are pertinent to their formation-growth energetics and pinning effects at the disk edge. Based on these findings, we propose a paradigm of optical-quenching-assisted fast switching of vortex cores for the control of magnetic vortex based information recording and spintronic devices.
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Submitted 19 December, 2017;
originally announced December 2017.
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Microwave-induced resistance oscillations in a back-gated GaAs quantum well
Authors:
X. Fu,
Q. A. Ebner,
Q. Shi,
M. A. Zudov,
Q. Qian,
M. J. Manfra
Abstract:
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provi…
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We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.
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Submitted 31 August, 2017;
originally announced August 2017.
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Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy
Authors:
Bin Chen,
Xuewen Fu,
Jau Tang,
Mykhaylo Lysevych,
Hark Hoe Tan,
Chennupati Jagadish,
Ahmed H. Zewail
Abstract:
Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the ph…
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Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional electron microscopy. The non-destructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control and 4D imaging of phase reaction processes on the nanometer-ultrafast time scale open new venues for engineering various reactions in a wide variety of other systems.
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Submitted 25 June, 2017; v1 submitted 19 January, 2017;
originally announced January 2017.
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Nanobubble-driven superfast diffusion dynamics of Brownian particles
Authors:
Xuewen Fu,
Bin Chen,
Jau Tang,
Ahmed H. Zewail
Abstract:
Dynamics of active or self-propulsive Brownian particles in nonequilibrium status, has recently attracted great interest in many fields including biological entities and artificial micro/nanoscopic motors6. Understanding of their dynamics can provide insight into the statistical properties of biological and physical systems far from equilibrium. Generally, active Brownian particles can involve eit…
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Dynamics of active or self-propulsive Brownian particles in nonequilibrium status, has recently attracted great interest in many fields including biological entities and artificial micro/nanoscopic motors6. Understanding of their dynamics can provide insight into the statistical properties of biological and physical systems far from equilibrium. Generally, active Brownian particles can involve either translational or rotational motion. Here, we report the translational dynamics of photon-activated gold nanoparticles (NPs) in liquid cell imaged by four-dimensional electron microscopy (4D-EM). Under excitation of femtosecond (fs)-laser pulses, we observed that those Brownian NPs exhibit a superfast diffusive behavior with a diffusion constant four to five orders of magnitude greater than that in absence of laser excitation. The measured diffusion constant was found to follow a power-law dependence on the fs-laser fluence. Such superfast diffusion is induced by strong random driving forces arising from rapid nucleation, expansion and collapse of photoinduced nanobubbles (NBs) near the NP surface. In contrast, the motion of the NPs exhibit superfast ballistic translation at a short time scale down to nanoseconds (ns). Combining with physical model simulation, this study reveals a NB-propulsion mechanism for the self-propulsive motion, providing physical insights for better design of light-activated artificial micro/nanomotors.
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Submitted 16 January, 2017;
originally announced January 2017.
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Contagion on complex networks with persuasion
Authors:
Wei-Min Huang,
Li-Jie Zhang,
Xin-Jian Xu,
Xinchu Fu
Abstract:
The threshold model has been widely adopted as a classic model for studying contagion processes on social networks. We consider asymmetric individual interactions in social networks and introduce a persuasion mechanism into the threshold model. Specifically, we study a combination of adoption and persuasion in cascading processes on complex networks. It is found that with the introduction of the p…
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The threshold model has been widely adopted as a classic model for studying contagion processes on social networks. We consider asymmetric individual interactions in social networks and introduce a persuasion mechanism into the threshold model. Specifically, we study a combination of adoption and persuasion in cascading processes on complex networks. It is found that with the introduction of the persuasion mechanism, the system may become more vulnerable to global cascades, and the effects of persuasion tend to be more significant in heterogeneous networks than those in homogeneous networks: a comparison between heterogeneous and homogeneous networks shows that under weak persuasion, heterogeneous networks tend to be more robust against random shocks than homogeneous networks; whereas under strong persuasion, homogeneous networks are more stable. Finally, we study the effects of adoption and persuasion threshold heterogeneity on systemic stability. Though both heterogeneities give rise to global cascades, the adoption heterogeneity has an overwhelmingly stronger impact than the persuasion heterogeneity when the network connectivity is sufficiently dense.
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Submitted 16 May, 2016;
originally announced May 2016.
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Active resonator reset in the nonlinear dispersive regime of circuit QED
Authors:
C. C. Bultink,
M. A. Rol,
T. E. O'Brien,
X. Fu,
B. C. S. Dikken,
C. Dickel,
R. F. L. Vermeulen,
J. C. de Sterke,
A. Bruno,
R. N. Schouten,
L. DiCarlo
Abstract:
We present two pulse schemes for actively depleting measurement photons from a readout resonator in the nonlinear dispersive regime of circuit QED. One method uses digital feedback conditioned on the measurement outcome while the other is unconditional. In the absence of analytic forms and symmetries to exploit in this nonlinear regime, the depletion pulses are numerically optimized using the Powe…
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We present two pulse schemes for actively depleting measurement photons from a readout resonator in the nonlinear dispersive regime of circuit QED. One method uses digital feedback conditioned on the measurement outcome while the other is unconditional. In the absence of analytic forms and symmetries to exploit in this nonlinear regime, the depletion pulses are numerically optimized using the Powell method. We shorten the photon depletion time by more than six inverse resonator linewidths compared to passive depletion by waiting. We quantify the benefit by emulating an ancilla qubit performing repeated quantum parity checks in a repetition code. Fast depletion increases the mean number of cycles to a spurious error detection event from order 1 to 75 at a 1 microsecond cycle time.
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Submitted 27 June, 2016; v1 submitted 4 April, 2016;
originally announced April 2016.
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Electronic and magnetic properties of dopant atoms in SnSe monolayer: a first-principles study
Authors:
Qingxia Wang,
Weiyang Yu,
Xiaonan Fu,
Chong Qiao,
Congxin Xia,
Yu Jia
Abstract:
SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintain…
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SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintains semiconducting property while In-doped SnSe monolayer is half-metal. The As- and Sb- doped SnSe systems present the characteristics of n-type semiconductor. Moreover, all considered substitutional doping cases induce magnetic ground states with the magnetic moment of 1μB. In addition, the calculated formation energies also show that four types of doped systems are thermodynamic stable. These results provide a new route for the potential applications of doped SnSe monolayer in 2D photoelectronic and magnetic semiconductor devices.
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Submitted 3 December, 2015;
originally announced December 2015.
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The properties of Tonk-Girardeau Gas at Finite Temperature and Comparison with Polarized Free Fermions
Authors:
Yajiang Hao,
Yafei Song,
Xiaochen Fu
Abstract:
In the present paper we investigate the Tonks-Girardeau gas confined in a harmonic trap at finite temperature with thermal Bose-Fermi mapping method. The pair distribution, density distribution, reduced one-body density matrix, the occupations number of natural orbitals, and momentum distribution are evaluated. In the whole temperature regime the pair distribution and density distribution exhibit…
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In the present paper we investigate the Tonks-Girardeau gas confined in a harmonic trap at finite temperature with thermal Bose-Fermi mapping method. The pair distribution, density distribution, reduced one-body density matrix, the occupations number of natural orbitals, and momentum distribution are evaluated. In the whole temperature regime the pair distribution and density distribution exhibit the same properties as those of polarized free Fermions because both of them depend on the modulus of wavefunction rather than wavefunction. While the reduced one-body density matrix, the natural orbital occupation, momentum distribution, which depend on wavefunction, of Tonks gas displays Bose properties different from polarized free Fermions at low temperature. At high temperature we can not distinguish Tonks gas from the polarized free Fermi gas by all properties qualitatively.
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Submitted 14 July, 2015;
originally announced July 2015.
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Temporal prediction of epidemic patterns in community networks
Authors:
Xiao-Long Peng,
Michael Small,
Xin-Jian Xu,
Xinchu Fu
Abstract:
Most previous studies of epidemic dynamics on complex networks suppose that the disease will eventually stabilize at either a disease-free state or an endemic one. In reality, however, some epidemics always exhibit sporadic and recurrent behaviour in one region because of the invasion from an endemic population elsewhere. In this paper we address this issue and study a susceptible-infected-suscept…
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Most previous studies of epidemic dynamics on complex networks suppose that the disease will eventually stabilize at either a disease-free state or an endemic one. In reality, however, some epidemics always exhibit sporadic and recurrent behaviour in one region because of the invasion from an endemic population elsewhere. In this paper we address this issue and study a susceptible-infected-susceptible epidemiological model on a network consisting of two communities, where the disease is endemic in one community but alternates between outbreaks and extinctions in the other. We provide a detailed characterization of the temporal dynamics of epidemic patterns in the latter community. In particular, we investigate the time duration of both outbreak and extinction, and the time interval between two consecutive inter-community infections, as well as their frequency distributions. Based on the mean-field theory, we theoretically analyze these three timescales and their dependence on the average node degree of each community, the transmission parameters, and the number of intercommunity links, which are in good agreement with simulations, except when the probability of overlaps between successive outbreaks is too large. These findings aid us in better understanding the bursty nature of disease spreading in a local community, and thereby suggesting effective time-dependent control strategies.
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Submitted 17 November, 2013;
originally announced November 2013.
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Tailoring exciton dynamics by elastic strain-gradient in semiconductors
Authors:
Xuewen Fu,
Cong Su,
Qiang Fu,
Xinli Zhu,
Rui Zhu,
Chuanpu Liu,
Jun Xu,
Ji Feng,
Ju Li,
Dapeng Yu
Abstract:
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconducto…
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As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconductors. Here, we take a combined experimental and theoretical approach to demonstrate that elastic strain-gradient can be created controllably and reversibly in ZnO micro/nanowires. In particular, we show that the inhomogeneous strain distribution creates an effective field that fundamentally alters the dynamics of the neutral excitons. As the basic principles behind these results are quite generic and applicable to most semiconductors, this work points to a novel route to a wide range of applications in electronics, optoelectronics, and photochemistry.
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Submitted 9 July, 2013;
originally announced July 2013.
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Vaccination intervention on epidemic dynamics in networks
Authors:
Xiao-Long Peng,
Xin-Jian Xu,
Xinchu Fu,
Tao Zhou
Abstract:
Vaccination is an important measure available for preventing or reducing the spread of infectious diseases. In this paper, an epidemic model including susceptible, infected, and imperfectly vaccinated compartments is studied on Watts-Strogatz small-world, Barabási-Albert scale-free, and random scale-free networks. The epidemic threshold and prevalence are analyzed. For small-world networks, the ef…
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Vaccination is an important measure available for preventing or reducing the spread of infectious diseases. In this paper, an epidemic model including susceptible, infected, and imperfectly vaccinated compartments is studied on Watts-Strogatz small-world, Barabási-Albert scale-free, and random scale-free networks. The epidemic threshold and prevalence are analyzed. For small-world networks, the effective vaccination intervention is suggested and its influence on the threshold and prevalence is analyzed. For scale-free networks, the threshold is found to be strongly dependent both on the effective vaccination rate and on the connectivity distribution. Moreover, so long as vaccination is effective, it can linearly decrease the epidemic prevalence in small-world networks, whereas for scale-free networks it acts exponentially. These results can help in adopting pragmatic treatment upon diseases in structured populations.
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Submitted 24 February, 2013;
originally announced February 2013.