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Electrical switching of chirality in rhombohedral graphene Chern insulators
Authors:
Jing Ding,
Hanxiao Xiang,
Jiannan Hua,
Wenqiang Zhou,
Naitian Liu,
Le Zhang,
Na Xin,
Kenji Watanabe,
Takashi Taniguchi,
Wei Zhu,
Shuigang Xu
Abstract:
A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by…
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A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral heptalayer graphene-based Chern insulators. The surface flat band and giant Berry curvature in rhombohedral multilayer graphene provide a highly tunable platform for engineering the topological states. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band. The Chern number can be continuously tuned from 0, -1, 1 to 2 by electric fields, manifesting as a large anomalous Hall effect and following Streda's formula. Sign reversal and the anomalous Hall effect also occurred at non-integer fillings, suggesting the possibility of electrically tunable topological phase transitions within the regime of fractional Chern insulators. Our work establishes rhombohedral heptalayer graphene moire superlattices as a versatile platform for topological engineering. The realization of switchable chirality enhances the potential application of chiral edge currents in topological circuit interconnects.
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Submitted 20 June, 2024;
originally announced June 2024.
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Lewis Acidity and Basicity Diagnostics of Molten Salt for its Properties and Structure Online Monitoring
Authors:
Changzu Zhu,
Jia Song,
Xiaorui Xu,
Chengyu Wang,
Yang Tong,
Lve Lin,
Shaoqiang Guo,
Wentao Zhou,
Adrien Couet,
Yafei Wang
Abstract:
Analogous to the aqueous solution where the pH of the solvent affects its multiple behaviors, the Lewis acidity-basicity of molten salts also greatly influences their thermophysical and thermochemical properties. In the study, we develop ion probes to quantitatively determine the acidity-basicity scale of molten NaCl-xAlCl3 (x = 1.5-2.1) salt using in-situ ultra-violet visible (UV-Vis) spectroscop…
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Analogous to the aqueous solution where the pH of the solvent affects its multiple behaviors, the Lewis acidity-basicity of molten salts also greatly influences their thermophysical and thermochemical properties. In the study, we develop ion probes to quantitatively determine the acidity-basicity scale of molten NaCl-xAlCl3 (x = 1.5-2.1) salt using in-situ ultra-violet visible (UV-Vis) spectroscopy. With the accumulation of acidity-basicity data of NaCl-AlCl3 molten salt for a variety of compositions, the correlation between the acidity-basicity of salt and its measured fundamental properties are derived. To understand the physical and chemical features controlling the acidity-basicity variations, the structures of NaCl-xAlCl3 molten salts with different chemical compositions are investigated in terms of bonded complexes and coordination numbers. The comprehensive understanding of the correlation between composition, acidity-basicity, properties, and structures of molten salt can serve for the full screening and online monitoring of salt melt in extreme environments by simply measuring the salt acidity-basicity as developed in this study.
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Submitted 19 June, 2024;
originally announced June 2024.
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Unusual charge density wave introduced by Janus structure in monolayer vanadium dichalcogenides
Authors:
Ziqiang Xu,
Yan Shao,
Chun Huang,
Genyu Hu,
Shihao Hu,
Zhi-Lin Li,
Xiaoyu Hao,
Yanhui Hou,
Teng Zhang,
Jin-An Shi,
Chen Liu,
Jia-Ou Wang,
Wu Zhou,
Jiadong Zhou,
Wei Ji,
Jingsi Qiao,
Xu Wu,
Hong-Jun Gao,
Yeliang Wang
Abstract:
As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fa…
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As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.
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Submitted 17 June, 2024;
originally announced June 2024.
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Correlated electrons of the flat band in charge density wave state of 4Hb-TaSexS2-x
Authors:
Yanyan Geng,
Jianfeng Guo,
Fanyu Meng,
Manyu Wang,
Shuo Mi,
Li Huang,
Rui Xu,
Fei Pang,
Kai Liu,
Shancai Wang,
Hong-Jun Gao,
Weichang Zhou,
Wei Ji,
Hechang Lei,
Zhihai Cheng
Abstract:
Many intriguing quantum states of matter, such as unconventional superconductivity, magnetic phases and fractional quantum Hall physics, emergent from the spatially-correlated localized electrons in the flat band of solid materials. By using scanning tunneling microscopy and spectroscopy (STM/STS), we report the real-space investigation of correlated electrons in the flat band of superlattice 4Hb-…
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Many intriguing quantum states of matter, such as unconventional superconductivity, magnetic phases and fractional quantum Hall physics, emergent from the spatially-correlated localized electrons in the flat band of solid materials. By using scanning tunneling microscopy and spectroscopy (STM/STS), we report the real-space investigation of correlated electrons in the flat band of superlattice 4Hb-TaSexS2-x. In contrast with the pristine 4Hb-TaS2, the selenium (Se) substitutions significantly affect the interfacial transfer of correlated electrons between the CDW states of 1T- and 1H-TaS2 layers, and contribute a real-space fractional electron-filling configurations with the distributed electron-filled and -void SoD clusters of 1T-layer. The site-specific STS spectra directly reveal their respective prominent spectra weight above EF and symmetric Mott-like spectra. In addition, the spatial distributions of these electron-filled SoDs in the 1T-layer of 4Hb-TaSe0.7S1.3 demonstrate different local short-range patterning, clearly indicating the complex neighboring interactions among the localized electrons in the flat band of 1T-layer. Our results not only provide an in-depth insight of correlated electrons in the flat CDW band, and provide a simple platform to manipulate the electron-correlation-related quantum states.
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Submitted 10 June, 2024;
originally announced June 2024.
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Phonon heat conduction across slippery interfaces in twisted graphite
Authors:
Fuwei Yang,
Wenjiang Zhou,
Zhibin Zhang,
Xuanyu Huang,
Jingwen Zhang,
Nianjie Liang,
Wujuan Yan,
Yuxi Wang,
Mingchao Ding,
Quanlin Guo,
Yu Han,
Te-Huan Liu,
Kaihui Liu,
Quanshui Zheng,
Bai Song
Abstract:
Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and prob…
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Interlayer rotation in van der Waals (vdW) materials offers great potential for manipulating phonon dynamics and heat flow in advanced electronics with ever higher compactness and power density. However, despite extensive theoretical efforts in recent years, experimental measurements remain scarce especially due to the critical challenges of preparing single-crystalline twisted interfaces and probing interfacial thermal transport with sufficient resolution. Here, we exploited the intrinsic twisted interfaces in highly oriented pyrolytic graphite (HOPG). By developing novel experimental schemes based on microfabricated mesas, we managed to achieve simultaneous mechanical characterizations and thermal measurements. In particular, we pushed the HOPG mesas with a microprobe to identify and rotate single-crystalline intrinsic interfaces owing to their slippery nature as is well known in structural superlubricity. Remarkably, we observed over 30-fold suppression of thermal conductance for the slippery interfaces by using epitaxial graphite as a control. Nonetheless, the interfacial conductance remains around 600 $\mathrm{MWm^{-2}K^{-1}}$ which surpasses the highest values for artificially stacked vdW structures by more than five times. Further, atomic simulations revealed the predominant role of the transverse acoustic phonons. Together, our findings highlight a general physical picture that directly correlates interfacial thermal transport with sliding resistance, and lay the foundation for twist-enabled thermal management which are particularly beneficial to twistronics and slidetronics.
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Submitted 6 June, 2024;
originally announced June 2024.
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Controlled fabrication of freestanding monolayer SiC by electron irradiation
Authors:
Yunli Da,
Ruichun Luo,
Bao Lei,
Wei Ji,
Wu Zhou
Abstract:
The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials…
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The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise. It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities. Here, we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane. By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope (STEM), we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice. The resultant SiC monolayers seamlessly connect with the graphene lattice, forming a planar structure distinct by a wide direct bandgap. Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion, providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional (2D) monolayers.
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Submitted 5 June, 2024;
originally announced June 2024.
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Polycatenated Architected Materials
Authors:
Wenjie Zhou,
Sujeeka Nadarajah,
Liuchi Li,
Anna G. Izard,
Aashutosh K. Prachet,
Payal Patel,
Hujie Yan,
Xiaoxing Xia,
Chiara Daraio
Abstract:
Architected materials derive their properties from the geometric arrangement of their internal structural elements, rather than solely from their chemical composition. They can display remarkable behaviors such as high strength while being lightweight, negative Poisson's ratios, and shear-normal coupling. However, architected materials so far have either exhibited solid-like or fluid-like behavior…
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Architected materials derive their properties from the geometric arrangement of their internal structural elements, rather than solely from their chemical composition. They can display remarkable behaviors such as high strength while being lightweight, negative Poisson's ratios, and shear-normal coupling. However, architected materials so far have either exhibited solid-like or fluid-like behavior, but not both. Here, we introduce a class of materials that consist of linked particles assembled in three-dimensional domains, forming polycatenated architected materials (PAMs). We propose a general framework for PAMs that translates arbitrary crystalline networks into particles' concatenations and design particles' geometry. The resulting materials are cohesive, yet the individual particles retain some kinematic freedom. In response to small external loads, PAMs behave like non-Newtonian fluids, showing both shear-thinning and shear-thickening responses. At larger strains, PAMs behave like solids, showing a nonlinear stress-strain relation, like lattices and foams. These responses are regulated by a jamming transition determined by the particles' arrangement and the direction of loading. PAMs are scalable, showing comparable mechanical responses at both millimeter- and micrometer-scales. However, micro-PAMs can change shape in response to electrostatic charges. PAM's properties are relevant for developing stimuli-responsive materials, energy-absorbing systems and morphing architectures.
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Submitted 1 June, 2024;
originally announced June 2024.
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Engineering band structures of two-dimensional materials with remote moire ferroelectricity
Authors:
Jing Ding,
Hanxiao Xiang,
Wenqiang Zhou,
Naitian Liu,
Xinjie Fang,
Kangyu Wang,
Linfeng Wu,
Kenji Watanabe,
Takashi Taniguchi,
Shuigang Xu
Abstract:
The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane elec…
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The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry breaking in rhombohedral-stacked transitional metal dichalcogenides (TMDCs) endows them with an interfacial ferroelectricity associated with an out-of-plane electric polarization. By utilizing twist angle as a knob to construct rhombohedral-stacked TMDCs, antiferroelectric domain networks with alternating out-of-plane polarization can be generated. Here, we demonstrate that such spatially periodic ferroelectric polarizations in parallel-stacked twisted WSe2 can imprint their moire potential onto a remote bilayer graphene. This remote moire potential gives rise to pronounced satellite resistance peaks besides the charge-neutrality point in graphene, which are tunable by the twist angle of WSe2. Our observations of ferroelectric hysteresis at finite displacement fields suggest the moire is delivered by a long-range electrostatic potential. The constructed superlattices by moire ferroelectricity represent a highly flexible approach, as they involve the separation of the moire construction layer from the electronic transport layer. This remote moire is identified as a weak potential and can coexist with conventional moire. Our results offer a comprehensive strategy for engineering band structures and properties of two-dimensional materials by utilizing moire ferroelectricity.
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Submitted 21 May, 2024;
originally announced May 2024.
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Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in $\bf{MnBi_2Te_4}$
Authors:
Shiqi Yang,
Xiaolong Xu,
Yuchen Gao,
Roger Guzman,
Pingfan Gu,
Huan Wang,
Yuan Huang,
Wu Zhou,
Tianlong Xia,
Yu Ye
Abstract:
The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin…
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The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interactions and the development of exotic applications. However, it is challenging due to the elusive interface between magnetic phases. In this study, we report an unprecedented exchange bias phenomenon observed in ultrathin uncompensated antiferromagnetic MnBi$_2$Te$_4$. The magnitude and direction of the exchange field can be intentionally controlled by designing a magnetic field sweep protocol without a field cooling process. The combined experimental and theoretical simulation results indicate that the spin-flip process assisted by the ubiquitous defect-induced pinning domain sites with varying inner exchange interactions might give rise to the emergence and robustness of this peculiar exchange bias. The temperature and thickness dependence of the exchange bias phenomena are systematically investigated for further study and exploitation of its unique properties. This mechanism hold promise for highly tunable exchange bias in prevalent magnetic systems by engineering the properties of domain structures, and also offers promising avenues for the design of spintronic devices combing its topology based on MnBi$_2$Te$_4$.
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Submitted 3 May, 2024;
originally announced May 2024.
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Electronic states and quantum transport in bilayer graphene Sierpinski-carpet fractals
Authors:
Xiaotian Yang,
Weiqing Zhou,
Qi Yao,
Yunhai Li,
Yunhua Wang,
Shengjun Yuan
Abstract:
We construct Sierpinski-carpet (SC) based on AA or AB bilayer graphene by atom vacancies, namely, SC-AA and SC-AB, to investigate the effects of interlayer coupling on the electronic properties of fractals. Compared with monolayer graphene SC, their density of states have similar features, such as Van-Hove singularities and edge states corresponding to the central peaks near zero energy, but remar…
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We construct Sierpinski-carpet (SC) based on AA or AB bilayer graphene by atom vacancies, namely, SC-AA and SC-AB, to investigate the effects of interlayer coupling on the electronic properties of fractals. Compared with monolayer graphene SC, their density of states have similar features, such as Van-Hove singularities and edge states corresponding to the central peaks near zero energy, but remarkable energy broadening of edge states emerges in SC-AA(AB). Calculated conductance spectrum shows that the conductance fluctuations still hold the Hausdorff fractal dimension behavior even with the interlayer coupling. Thus, the high correlation between quantum conductance and fractal geometry dimension is not affected by the interlayer coupling in bilayer graphene SC. We further reveal the quasi-eigenstates in fractal-like pressure-modulated bilayer graphene, namely, SC-pAA and SC-pAB. Numerical results show that the density of states of SC-pAA(pAB) show an asymptotic behavior to those of SC-AA(AB) especially for high energy quasi-eigenstates. Within a certain energy range, stronger pressure can lead to stronger localization, forming an efficient fractal space.
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Submitted 17 April, 2024; v1 submitted 16 April, 2024;
originally announced April 2024.
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Electronic ferroelectricity in monolayer graphene for multifunctional neuromorphic electronics
Authors:
Le Zhang,
Jing Ding,
Hanxiao Xiang,
Naitian Liu,
Wenqiang Zhou,
Linfeng Wu,
Na Xin,
Kenji Watanabe,
Takashi Taniguchi,
Shuigang Xu
Abstract:
Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with pol…
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Ferroelectricity is intriguing for its spontaneous electric polarization, which is switchable by an external electric field. Expanding ferroelectric materials to two-dimensional limit will provide versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires the materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices. Nevertheless, two-dimensional moire superlattices offer a powerful way to engineer diverse electronic orders in non-polar materials. Here, we report the observations of electronic ferroelectricity in monolayer graphene by introducing asymmetric moire superlattice at the graphene/h-BN interface. Utilizing Hall measurements, the electric polarization is identified to stem from electron-hole dipoles, suggesting the electronic dynamics of the observed ferroelectricity. Standard polarization-electric field hysteresis loops, as well as unconventional multiple switchable polarization states, have been achieved. By in-situ comparing with control devices, we found that the electronic ferroelectricity in graphene moire systems is independent of layer number of graphene and the corresponding fine band structures. Furthermore, we demonstrate the applications of this ferroelectric moire structures in multi-state non-volatile data storage and the emulation of versatile synaptic behaviors, including short-term plasticity, long-term potentiation and long-term depression. This work not only enriches the fundamental understanding of ferroelectricity, but also demonstrates the promising applications of graphene in multi-state memories and neuromorphic computing.
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Submitted 4 April, 2024;
originally announced April 2024.
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Thermal transport in a 2D amorphous material
Authors:
Yuxi Wang,
Xingxing Zhang,
Wujuan Yan,
Nianjie Liang,
Haiyu He,
Xinwei Tao,
Ang Li,
Fuwei Yang,
Buxuan Li,
Te-Huan Liu,
Jia Zhu,
Wu Zhou,
Wei Wang,
Lin Zhou,
Bai Song
Abstract:
Two-dimensional (2D) crystals proved revolutionary soon after graphene was discovered in 2004. However, 2D amorphous materials only became accessible in 2020 and remain largely unexplored. In particular, the thermophysical properties of amorphous materials are of great interest upon transition from 3D to 2D. Here, we probe thermal transport in 2D amorphous carbon. A cross-plane thermal conductivit…
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Two-dimensional (2D) crystals proved revolutionary soon after graphene was discovered in 2004. However, 2D amorphous materials only became accessible in 2020 and remain largely unexplored. In particular, the thermophysical properties of amorphous materials are of great interest upon transition from 3D to 2D. Here, we probe thermal transport in 2D amorphous carbon. A cross-plane thermal conductivity ($κ$) down to 0.079 $\rm{Wm}^{-1}K^{-1}$ is measured for van der Waals stacked multilayers at room temperature, which is among the lowest reported to date. Meanwhile, an unexpectedly high in-plane $κ$ is obtained for freestanding monolayers which is a few times larger than what is predicted by conventional wisdom for 3D amorphous carbon with similar $\rm{sp}^{2}$ fraction. Our molecular dynamics simulations reveal the role of disorder and highlight the impact of dimensionality. Amorphous materials at the 2D limit open up new avenues for understanding and manipulating heat at the atomic scale.
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Submitted 22 March, 2024; v1 submitted 20 February, 2024;
originally announced February 2024.
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Systematic Absences of Optical Phonon Modes in Phonon Dispersion Measured by Electron Microscopy
Authors:
Aowen Li,
Paul Zeiger,
Zuxian He,
Mingquan Xu,
Stephen J. Pennycook,
Ján Rusz,
Wu Zhou
Abstract:
Phonon dispersion is widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy (STEM) offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across seve…
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Phonon dispersion is widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy (STEM) offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across several Brillouin zones (BZs) using momentum-resolved vibrational spectroscopy and find that the optical phonon signals vanish at the Γ points with indices (hk0) satisfying h+2k=3n (n denoted integers). Theoretical analysis reveals that the observed phenomena arise from the complete destructive interference of the scattered waves from different basis atoms. This observation, corroborated by the study of diamond, should be a general characteristic of materials composed of symmetrically equivalent pairs of the same elements. Moreover, our results emphasize the importance of multiple scattering in interpreting the vibrational signals in bulk materials. We demonstrate that the systematic absences and dynamic effects, which have not been much appreciated before, offer new insights into the experimental assessment of local vibrational properties of materials.
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Submitted 6 June, 2024; v1 submitted 17 February, 2024;
originally announced February 2024.
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Molecular dynamics simulations of heat transport using machine-learned potentials: A mini review and tutorial on GPUMD with neuroevolution potentials
Authors:
Haikuan Dong,
Yongbo Shi,
Penghua Ying,
Ke Xu,
Ting Liang,
Yanzhou Wang,
Zezhu Zeng,
Xin Wu,
Wenjiang Zhou,
Shiyun Xiong,
Shunda Chen,
Zheyong Fan
Abstract:
Molecular dynamics (MD) simulations play an important role in understanding and engineering heat transport properties of complex materials. An essential requirement for reliably predicting heat transport properties is the use of accurate and efficient interatomic potentials. Recently, machine-learned potentials (MLPs) have shown great promise in providing the required accuracy for a broad range of…
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Molecular dynamics (MD) simulations play an important role in understanding and engineering heat transport properties of complex materials. An essential requirement for reliably predicting heat transport properties is the use of accurate and efficient interatomic potentials. Recently, machine-learned potentials (MLPs) have shown great promise in providing the required accuracy for a broad range of materials. In this mini review and tutorial, we delve into the fundamentals of heat transport, explore pertinent MD simulation methods, and survey the applications of MLPs in MD simulations of heat transport. Furthermore, we provide a step-by-step tutorial on developing MLPs for highly efficient and predictive heat transport simulations, utilizing the neuroevolution potentials (NEPs) as implemented in the GPUMD package. Our aim with this mini review and tutorial is to empower researchers with valuable insights into cutting-edge methodologies that can significantly enhance the accuracy and efficiency of MD simulations for heat transport studies.
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Submitted 24 April, 2024; v1 submitted 29 January, 2024;
originally announced January 2024.
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Isotope engineering of carrier mobility via Fröhlich electron-phonon interaction
Authors:
Wenjiang Zhou,
Te-Huan Liu,
Bai Song
Abstract:
Isotope effects on phonon properties and transport have been predicted and observed for decades. However, despite the crucial impact of electron-phonon interactions, the effect of isotopes on electron transport remains largely unexplored. Here, by using first-principles calculations, we theoretically predict that the electron mobility of lithium hydride (LiH) can increase by up to ~100% as…
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Isotope effects on phonon properties and transport have been predicted and observed for decades. However, despite the crucial impact of electron-phonon interactions, the effect of isotopes on electron transport remains largely unexplored. Here, by using first-principles calculations, we theoretically predict that the electron mobility of lithium hydride (LiH) can increase by up to ~100% as $^3\rm{H}$ is replaced with $^1\rm{H}$. This remarkable phenomenon is primarily attributed to the isotope engineering of the Fröhlich interaction by the mass-induced line shift of the longitudinal optical (LO) phonons. Notably, the isotope-dependent absorption of LO phonons dominates while the isotope-insensitive emission process is mostly suppressed due to energy conservation. We further propose general guidelines for evaluating isotope effects on carrier transport in different materials.
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Submitted 26 January, 2024;
originally announced January 2024.
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Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces
Authors:
Gyanendra Singh,
Roger Guzman,
Guilhem Saïz,
Wu Zhou,
Jaume Gazquez,
Jordi Fraxedas,
Fereshteh Masoudinia,
Dag Winkler,
Tord Claeson,
Nicolas Bergeal,
Gervasi Herranz,
Alexei Kalaboukhov
Abstract:
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO…
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SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. Interestingly, we find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems
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Submitted 25 January, 2024;
originally announced January 2024.
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Correcting force error-induced underestimation of lattice thermal conductivity in machine learning molecular dynamics
Authors:
Xiguang Wu,
Wenjiang Zhou,
Haikuang Dong,
Penghua Ying,
Yanzhou Wang,
Bai Song,
Zheyong Fan,
Shiyun Xiong
Abstract:
Machine learned potentials (MLPs) have been widely employed in molecular dynamics (MD) simulations to study thermal transport. However, literature results indicate that MLPs generally underestimate the lattice thermal conductivity (LTC) of typical solids. Here, we quantitatively analyze this underestimation in the context of the neuroevolution potential (NEP), which is a representative MLP that ba…
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Machine learned potentials (MLPs) have been widely employed in molecular dynamics (MD) simulations to study thermal transport. However, literature results indicate that MLPs generally underestimate the lattice thermal conductivity (LTC) of typical solids. Here, we quantitatively analyze this underestimation in the context of the neuroevolution potential (NEP), which is a representative MLP that balances efficiency and accuracy. Taking crystalline silicon, GaAs, graphene, and PbTe as examples, we reveal that the fitting errors in the machine-learned forces against the reference ones are responsible for the underestimated LTC as they constitute external perturbations to the interatomic forces. Since the force errors of a NEP model and the random forces in the Langevin thermostat both follow a Gaussian distribution, we propose an approach to correcting the LTC by intentionally introducing different levels of force noises via the Langevin thermostat and then extrapolating to the limit of zero force error. Excellent agreement with experiments is obtained by using this correction for all the prototypical materials over a wide range of temperatures. Based on spectral analyses, we find that the LTC underestimation mainly arises from increased phonon scatterings in the low-frequency region caused by the random force errors.
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Submitted 26 May, 2024; v1 submitted 21 January, 2024;
originally announced January 2024.
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Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn$_6$Sn$_6$ (R = Er, Tb) Thin Films
Authors:
Shuyu Cheng,
Igor Lyalin,
Wenyi Zhou,
Roland K. Kawakami
Abstract:
Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for r…
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Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for realizing the high-temperature quantum anomalous Hall effect. The growth of RMn$_6$Sn$_6$ thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn$_6$Sn$_6$ have focused on bulk crystals so far, and the synthesis of RMn$_6$Sn$_6$ thin films has not been reported so far. Here we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn$_6$Sn$_6$ and TbMn$_6$Sn$_6$ thin films. It is especially noteworthy that TbMn$_6$Sn$_6$ thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum anomalous Hall effect. Our work paves the avenue toward the control of the AHE using devices patterned from RMn$_6$Sn$_6$ thin films.
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Submitted 9 January, 2024;
originally announced January 2024.
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Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2
Authors:
Haoyu Dong,
Yanyan Geng,
Jianfeng Guo,
Le Lei,
Yan Li,
Li Huang,
Fei Pang,
Rui Xu,
Weiqiang Yu,
Wei Ji,
Hong-Jun Gao,
Weichang Zhou,
Zhihai Cheng
Abstract:
The complex correlated charge density wave (CDW) phases of 1T-TaS2 have attracted great attention due to their emergent quantum states, such as intricate CDW phase, Mott-Hubbard state, superconductivity and quantum spin liquid. The delicate interplay among the complex intra-/inter-layer electron-electron and electron-lattice interactions is the fundamental prerequisite of these exotic quantum stat…
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The complex correlated charge density wave (CDW) phases of 1T-TaS2 have attracted great attention due to their emergent quantum states, such as intricate CDW phase, Mott-Hubbard state, superconductivity and quantum spin liquid. The delicate interplay among the complex intra-/inter-layer electron-electron and electron-lattice interactions is the fundamental prerequisite of these exotic quantum states. Here, we report a real-space titration-like investigation of correlated CDW state in 1T-TaS2 upon hole-doping via low-temperature scanning tunneling microscopy (LT-STM). The gradual increased hole-doping results in the sequential emergence of electron voids, phase domains, stacking disordering and mixed phase/chiral domains attributed to the reduced electron correlations. The achiral intermediate ring-like clusters and nematic CDW states emerge at the intralayer chiral domain wall and interlayer heterochiral stacking regions via the chiral-overlapping configurations. The local reversible CDW manipulation is further realized by the non-equilibrium transient charge-injections of STM field-emission spectra. Our results provide an in-depth insight of this intricate correlated CDW state, and pave a way to realize exotic quantum states via the accurate tuning of interior interactions in correlated materials.
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Submitted 21 January, 2024; v1 submitted 2 January, 2024;
originally announced January 2024.
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Inversion symmetry-broken tetralayer graphene probed by second harmonic generation
Authors:
Wenqiang Zhou,
Jiannan Hua,
Naitian Liu,
Jing Ding,
Hanxiao Xiang,
Wei Zhu,
Shuigang Xu
Abstract:
Symmetry breaking governs most fascinating phenomena in crystals, such as ferroelectricity, nonlinear optics, piezoelectricity, ferromagnetism, and superconductivity. In two-dimensional materials, a wide variety of tuning knobs presents extraordinary opportunities for engineering symmetry breaking, leading to the emergence and manipulation of novel physical properties. Recently, tetralayer graphen…
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Symmetry breaking governs most fascinating phenomena in crystals, such as ferroelectricity, nonlinear optics, piezoelectricity, ferromagnetism, and superconductivity. In two-dimensional materials, a wide variety of tuning knobs presents extraordinary opportunities for engineering symmetry breaking, leading to the emergence and manipulation of novel physical properties. Recently, tetralayer graphene with ABCB stacking order is predicted to possess atypical elemental ferroelectricity arising from the symmetry breaking induced by its specific stacking configuration. Experimentally unveiling the stacking-order dependent symmetry in tetralayer graphene is crucial to understand the intricate properties in the emergent graphene allotropes. Here, we observe pronounced nonlinear optical second harmonic generation (SHG) in ABCB-stacked tetralayer graphene, but absent in both ABAB- and ABCA-stacked allotropes. Our results provide direct evidence of symmetry breaking in ABCB-stacked tetralayer graphene. The remarkable contrast in the SHG spectra of tetralayer graphene allows straightforward identification of ABCB domains from the other two kinds of stacking order and facilitates the characterization of their crystalline orientation. The employed SHG technique serves as a convenient tool for exploring the intriguing physics and novel nonlinear optics in ABCB-stacked graphene, where spontaneous polarization and intrinsic gapped flat bands coexist. Our results establish ABCB-stacked graphene as a unique platform for studying the rare ferroelectricity in non-centrosymmetric elemental structures.
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Submitted 28 November, 2023;
originally announced November 2023.
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Multiple superconducting phases driven by pressure in the topological insulator GeSb4Te7
Authors:
W. Zhou,
B. Li,
Y. Shen,
J. J. Feng,
C. Q. Xu,
H. T. Guo,
Z. He,
B. Qian,
Ziming Zhu,
Xiaofeng Xu
Abstract:
Tuning superconductivity in topological materials by means of chemical substitution, electrostatic gating, or pressure is thought to be an effective route towards realizing topological superconductivity with their inherent Majorana fermions, the manipulation of which may form the basis for future topological quantum computing. It has recently been established that the pseudo-binary chalcogenides (…
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Tuning superconductivity in topological materials by means of chemical substitution, electrostatic gating, or pressure is thought to be an effective route towards realizing topological superconductivity with their inherent Majorana fermions, the manipulation of which may form the basis for future topological quantum computing. It has recently been established that the pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) may host novel topological quantum states such as the quantum anomalous Hall effect and topological axion states. Here we map out the phase diagram of one member in this series, the topological insulator candidate GeSb4Te7 up to pressures of ~35 GPa, through a combination of electrical resistance measurements, Raman spectroscopy, as well as first-principles calculations. Three distinct superconducting phases emerge under the pressure above ~11, ~17, and ~31 GPa, which are accompanied by concomitant structural transitions, evidenced from the changes in the Raman modes. The first-principles calculations validate the existence of a topological insulating state at ambient pressure and predict two possible structural transitions at 10 and 17 GPa, in agreement with the experimental observations. Overall, our results establish the GeSb4Te7 family of materials as a fertile arena for further exploring various topological phenomena, including topological phase transitions and putative topological superconductivity.
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Submitted 24 November, 2023;
originally announced November 2023.
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Polytypism of Incommensurately Modulated Structures of Crystalline Bromine upon Molecular Dissociation under High Pressure
Authors:
Yuqing Yin,
Andrey Aslandukov,
Maxim Bykov,
Dominique Laniel,
Alena Aslandukova,
Anna Pakhomova,
Timofey Fedotenko,
Wenju Zhou,
Fariia Iasmin Akbar,
Michael Hanfland,
Konstantin Glazyrin,
Carlotta Giacobbe,
Eleanor Lawrence Bright,
Gaston Garbarino,
Zhitai Jia,
Natalia Dubrovinskaia,
Leonid Dubrovinsky
Abstract:
Polytypism of incommensurately modulated structures was hitherto unobserved. Here, we found the phenomenon in simple halogen systems of bromine and iodine upon molecular dissociation in the solids under pressure. Single-crystal synchrotron X-ray diffraction in laser heated diamond anvil cells pressurised up to 112 GPa revealed a number of allotropes of bromine and iodine including polytypes of Br-…
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Polytypism of incommensurately modulated structures was hitherto unobserved. Here, we found the phenomenon in simple halogen systems of bromine and iodine upon molecular dissociation in the solids under pressure. Single-crystal synchrotron X-ray diffraction in laser heated diamond anvil cells pressurised up to 112 GPa revealed a number of allotropes of bromine and iodine including polytypes of Br-IIIγ (Fmmm(00γ)s00) with γ varying within 0.18 to 0.3.
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Submitted 21 November, 2023;
originally announced November 2023.
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Phonon vortices at heavy impurities in two-dimensional materials
Authors:
De-Liang Bao,
Mingquan Xu,
Ao-Wen Li,
Gang Su,
Wu Zhou,
Sokrates T. Pantelides
Abstract:
The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the discovery of phonon vortices at heavy impurities in two-dimensional materials. We use density-functional-theory calculations for two configurations of Si impurities…
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The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the discovery of phonon vortices at heavy impurities in two-dimensional materials. We use density-functional-theory calculations for two configurations of Si impurities in graphene, Si-C3 and Si-C4, to examine atom-projected phonon densities of states and display the atomic-displacement patterns for select modes that are dominated by impurity displacements. The vortices are driven by large displacements of the impurities, and reflect local symmetries. Similar vortices are found at phosphorus impurities in hexagonal boron nitride, suggesting that they may be a feature of heavy impurities in crystalline materials. Phonon vortices at defects are expected to play a role in thermal conductivity and other properties.
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Submitted 12 October, 2023;
originally announced October 2023.
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Secondary proximity effect in a side-coupled double quantum dot structure
Authors:
Jia-Ning Wang,
Yong-Chen Xiong,
Wang-Huai Zhou,
Tan Peng,
Ziyu Wang
Abstract:
Semiconductor quantum dots in close proximity to superconductors may provoke localized bound states within the superconducting energy gap known as Yu-Shiba-Rusinov (YSR) state, which is a promising candidate for constructing Majorana zero modes and topological qubits. Side-coupled double quantum dot systems are ideal platforms revealing the secondary proximity effect. Numerical renormalization gro…
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Semiconductor quantum dots in close proximity to superconductors may provoke localized bound states within the superconducting energy gap known as Yu-Shiba-Rusinov (YSR) state, which is a promising candidate for constructing Majorana zero modes and topological qubits. Side-coupled double quantum dot systems are ideal platforms revealing the secondary proximity effect. Numerical renormalization group calculations show that, if the central quantum dot can be treated as a noninteracting resonant level, it acts as a superconducting medium due to the ordinary proximity effect. The bound state in the side dot behaves as the case of a single impurity connected to two superconducting leads. The side dot undergoes quantum phase transitions between a singlet state and a doublet state as the Coulomb repulsion, the interdot coupling strength, or the energy level sweeps. Phase diagrams indicate that the phase boundaries could be well illustrated by $Δ\approx c {T_{K2}}$ in all cases, with $Δ$ is the superconducting gap, $T_{K2}$ is the side Kondo temperature and $c$ is of the order $1.0$. These findings offer valuable insights into the secondary proximity effect, and show great importance for designing superconducting quantum devices.
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Submitted 9 October, 2023;
originally announced October 2023.
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Surface ferromagnetism in rhombohedral heptalayer graphene moire superlattice
Authors:
Wenqiang Zhou,
Jing Ding,
Jiannan Hua,
Le Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Wei Zhu,
Shuigang Xu
Abstract:
The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological superconductivity in iron-based superconductors. Recently, rhombohedral multilayer graphene has emerged as a promising platform for exploring exotic surface states due to it…
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The topological electronic structure of crystalline materials often gives rise to intriguing surface states, such as Dirac surface states in topological insulators, Fermi arc surface states in Dirac semimetals, and topological superconductivity in iron-based superconductors. Recently, rhombohedral multilayer graphene has emerged as a promising platform for exploring exotic surface states due to its hosting of topologically protected surface flat bands at low energy, with the layer-dependent energy dispersion. These flat bands can promote electron correlations, leading to a plethora of quantum phenomena, including spontaneous symmetry breaking, superconductivity, ferromagnetism, and topological Chern insulators. Nevertheless, the intricate connection between the surface flat bands in rhombohedral multilayer graphene and the highly dispersive high-energy bands hinders the exploration of correlated surface states. Here, we present a method to isolate the surface flat bands of rhombohedral heptalayer (7L) graphene by introducing moire superlattices. The pronounced screening effects observed in the moire potential-modulated rhombohedral 7L graphene indicate its essential three-dimensional (3D) nature. The isolated surface flat bands favor correlated states on the surface in the regions away from charge-neutrality points. Most notably, we observe tunable surface ferromagnetism, manifested as an anomalous Hall effect with hysteresis loops, which is achieved by polarizing surface states using finite displacement fields. Our work establishes rhombohedral multilayer graphene moire superlattice as a unique 3D system for exploring correlated surface states.
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Submitted 8 October, 2023;
originally announced October 2023.
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Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Xiyue S. Zhang,
Katherine Robinson,
Igor Lyalin,
Ziling Li,
Ryan Bailey-Crandell,
Thow Min Jerald Cham,
Shuyu Cheng,
Yunqiu Kelly Luo,
Daniel C. Ralph,
David A. Muller,
Roland K. Kawakami
Abstract:
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th…
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Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for developing various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties.
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Submitted 25 August, 2023;
originally announced August 2023.
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Controlling the 2D magnetism of CrBr$_3$ by van der Waals stacking engineering
Authors:
Shiqi Yang,
Xiaolong Xu,
Bo Han,
Pingfan Gu,
Roger Guzman,
Yiwen Song,
Zhongchong Lin,
Peng Gao,
Wu Zhou,
Jinbo Yang,
Zuxin Chen,
Yu Ye
Abstract:
The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and prep…
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The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate effective control of interlayer stacking in exfoliated CrBr$_3$ via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically-resolved imaging technique reveals the correlation between magnetic order and interlay stacking order in the CrBr$_3$ flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order, and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.
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Submitted 22 August, 2023;
originally announced August 2023.
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Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands
Authors:
Shuyu Cheng,
M. Nrisimhamurty,
Tong Zhou,
Nuria Bagues,
Wenyi Zhou,
Alexander J. Bishop,
Igor Lyalin,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
David W. McComb,
Igor Zutic,
Roland K. Kawakami
Abstract:
Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi l…
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Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials.
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Submitted 28 July, 2023;
originally announced July 2023.
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Deep learning inter-atomic potential for irradiation damage in 3C-SiC
Authors:
Yong Liu,
Hao Wang,
Linxin Guo,
Zhanfeng Yan,
Jian Zheng,
Wei Zhou,
Jianming Xue
Abstract:
We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler-Biersack-Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which a…
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We developed and validated an accurate inter-atomic potential for molecular dynamics simulation in cubic silicon carbide (3C-SiC) using a deep learning framework combined with smooth Ziegler-Biersack-Littmark (ZBL) screened nuclear repulsion potential interpolation. Comparisons of multiple important properties were made between the deep-learning potential and existing analytical potentials which are most commonly used in molecular dynamics simulations of 3C-SiC. Not only for equilibrium properties but also for significant properties of radiation damage such as defect formation energies and threshold displacement energies, our deep-learning potential gave closer predictions to DFT criterion than analytical potentials. The deep-learning potential framework solved the long-standing dilemma that traditional empirical potentials currently applied in 3C-SiC radiation damage simulations gave large disparities with each other and were inconsistent with ab-initio calculations. A more realistic depiction of the primary irradiation damage process in 3C-SiC can be given and the accuracy of classical molecular dynamics simulation for cubic silicon carbide can be expected to the level of quantum mechanics.
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Submitted 30 May, 2023;
originally announced May 2023.
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Measurement of the Dzyaloshinskii-Moriya Interaction in Mn4N Films that Host Skyrmions
Authors:
Wei Zhou,
Chung Ting Ma,
S. Joseph Poon
Abstract:
Mn4N thin film is one of the potential magnetic mediums for spintronic devices due to its ferrimagnetism with low magnetization, large perpendicular magnetic anisotropy (PMA), thermal stability, and large domain wall velocity. A recent experiment confirmed the existence of tunable magnetic skyrmions in MgO/Mn4N/CuxPt1-x(x=0,0.5,0.9,0.95), and density functional theory (DFT) calculation provided a…
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Mn4N thin film is one of the potential magnetic mediums for spintronic devices due to its ferrimagnetism with low magnetization, large perpendicular magnetic anisotropy (PMA), thermal stability, and large domain wall velocity. A recent experiment confirmed the existence of tunable magnetic skyrmions in MgO/Mn4N/CuxPt1-x(x=0,0.5,0.9,0.95), and density functional theory (DFT) calculation provided a large theoretical value of the interfacial Dzyaloshinskii-Moriya Interaction (iDMI) of Mn4N/Pt, which is consistent with the predicted chemical trend of DMI in transition metal/Pt films. So far, measured DMI has not been reported in Mn4N which is needed in order to support the predicted large DMI value. This paper reports the average DMI of MgO/Mn4N(17nm)/CuxPt1-x(3nm), extracted from the anomalous Hall effect with various tilted angles, based on magnetic droplet theory with DMI effects. The DMI decreases from 0.267 mJ/m2 to 0.011 mJ/m2 with non-linear tendencies as Cu concentration in the CuxPt1-x capping layer increases from 0 to 1, demonstrating the control of DMI through CuxPt1-x capping layer. Furthermore, a solid solution model is developed, based on X-ray photoelectron spectroscopy (XPS) compositional depth profile, to analyze the possible effects on DMI from the mixing layers at the surface of Mn4N. After taking into account the mixing layers, the large DMI in Mn4N film with Pt capping is consistent with the predicted DMI.
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Submitted 15 May, 2023;
originally announced May 2023.
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Enhanced hydrogen-gas permeation through rippled graphene
Authors:
Wenqi Xiong,
Weiqing Zhou,
Pengzhan Sun,
Shengjun Yuan
Abstract:
The penetration of atomic hydrogen through defect-free graphene was generally predicted to have a barrier of at least several eV, which is much higher than the 1 eV barrier measured for hydrogen-gas permeation through pristine graphene membranes. Herein, our density functional theory calculations show that ripples, which are ubiquitous in atomically thin crystals and mostly overlooked in the previ…
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The penetration of atomic hydrogen through defect-free graphene was generally predicted to have a barrier of at least several eV, which is much higher than the 1 eV barrier measured for hydrogen-gas permeation through pristine graphene membranes. Herein, our density functional theory calculations show that ripples, which are ubiquitous in atomically thin crystals and mostly overlooked in the previous simulations, can significantly reduce the barriers for all steps constituting the mechanism of hydrogen-gas permeation through graphene membranes, including dissociation of hydrogen molecules, reconstruction of the dissociated hydrogen atoms and their flipping across graphene. Especially, the flipping barrier of hydrogen atoms from a cluster configuration is found to decrease rapidly down to <1 eV with increasing ripples' curvature. The estimated hydrogen permeation rates by fully considering the distribution of ripples with all realistic curvatures and the major reaction steps that occurred on them are quite close to the experimental measurements. Our work provides insights into the fundamental understanding of hydrogen-gas permeation through graphene membranes and emphasizes the importance of nanoscale non-flatness (ripples) in explaining many surface and transport phenomena (for example, functionalization, corrosion and separation) in graphene and other two-dimensional materials.
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Submitted 5 May, 2023;
originally announced May 2023.
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Janus monolayer TaNF: a new ferrovalley material with large valley splitting and tunable magnetic properties
Authors:
Guibo Zheng,
Shuixian Qu,
Wenzhe Zhou,
Fangping Ouyang
Abstract:
Materials with large intrinsic valley splitting and high Curie temperature are a huge advantage for studying valleytronics and practical applications. In this work, using first-principles calculations, a new Janus TaNF monolayer is predicted to exhibit excellent piezoelectric properties and intrinsic valley splitting, resulting from the spontaneous spin polarization, the spatial inversion symmetry…
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Materials with large intrinsic valley splitting and high Curie temperature are a huge advantage for studying valleytronics and practical applications. In this work, using first-principles calculations, a new Janus TaNF monolayer is predicted to exhibit excellent piezoelectric properties and intrinsic valley splitting, resulting from the spontaneous spin polarization, the spatial inversion symmetry breaking and strong spin-orbit coupling (SOC). TaNF is also a potential two-dimensional (2D) magnetic material due to its high Curie temperature and huge magnetic anisotropy energy. The effective control of the band gap of TaNF can be achieved by biaxial strain, which can transform TaNF monolayer from semiconductor to semi-metal. The magnitude of valley splitting at the CBM can be effectively tuned by biaxial strain due to the changes of orbital composition at the valleys. The magnetic anisotropy energy (MAE) can be manipulated by changing the energy and occupation (unoccupation) states of d orbital compositions through biaxial strain. In addition, Curie temperature reaches 373 K under only -3% biaxial strain, indicating that Janus TaNF monolayer can be used at high temperatures for spintronic and valleytronic devices.
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Submitted 12 April, 2023;
originally announced April 2023.
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Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3
Authors:
Brad M. Goff,
Alexander J. Bishop,
Wenyi Zhou,
Ryan Bailey-Crandell,
Katherine Robinson,
Roland K. Kawakami,
Jay A. Gupta
Abstract:
Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and out…
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Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 390 +- 10 pm for FGT and 430 +- 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 +- 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignments. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a (sqrt3 x sqrt3)R30 reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism (MCD) measurements confirm these thin FGT films are ferromagnetic with TC ~190 K.
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Submitted 20 November, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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Unusual Nonlinear Optical Responses in Layered Ferroelectric Niobium Oxide Dihalides: Origin and Manipulation
Authors:
Liangting Ye,
Wenju Zhou,
Dajian Huang,
Xiao Jiang,
Donghan Jia,
Qiangbing Guo,
Dequan Jiang,
Yonggang Wang,
Xiaoqiang Wu,
Yang Li,
Huiyang Gou,
Bing Huang
Abstract:
Realization of large and highly tunable second-order nonlinear optical (NLO) responses, e.g., second-harmonic generation (SHG) and bulk photovoltaic effect (BPVE), is critical for developing modern optical and optoelectronic devices. Very recently, the two-dimensional van der Waals ferroelectric NbOX2 (X = Cl, Br or I) are discovered to exhibit unusually large and anisotropic SHG. However, the phy…
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Realization of large and highly tunable second-order nonlinear optical (NLO) responses, e.g., second-harmonic generation (SHG) and bulk photovoltaic effect (BPVE), is critical for developing modern optical and optoelectronic devices. Very recently, the two-dimensional van der Waals ferroelectric NbOX2 (X = Cl, Br or I) are discovered to exhibit unusually large and anisotropic SHG. However, the physical origin and possible tunability of NLO responses in NbOX2 remain to be unclear. In this article, we reveal that the large SHG in NbOCl2 is dominated by the synergy between large transition dipole moment and band-nesting-induced large intensity of electron-hole pairs. Remarkably, the NbOCl2 can exhibit dramatically different strain-dependent BPVE under different polarized light, originating from the interesting light-polarization-dependent orbital transition. Importantly, we successfully achieve a reversible ferroelectric-to-antiferroelectric phase transition via controlling ambient temperature or external pressure, accompanied by the greatly tunable NLO responses. Furthermore, we discover that the evolutions of SHG and BPVE in NbOX2 with variable X obey different rules. Our study provides a deep understanding on the novel NLO physics in NbOX2 and establishes great external-field tunability for device applications.
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Submitted 24 February, 2023;
originally announced February 2023.
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Characterisation of Corrosion Damage in T91/F91 steel exposed to Liquid Lead-Bismuth Eutectic
Authors:
M. T. Lapington,
M. Zhang,
M. P. Moody,
W. Y. Zhou,
M. P. Short,
F. Hofmann
Abstract:
T91 samples were exposed to static liquid lead-bismuth eutectic (LBE) at 700°C for 250-500 hours in either an oxidising or reducing environment. Corrosion damage was characterised using electron microscopy techniques, which identified networks of LBE intrusion beneath LBE-wetted surfaces. Under reducing conditions these networks are uniformly distributed, while they appear patchier and deeper unde…
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T91 samples were exposed to static liquid lead-bismuth eutectic (LBE) at 700°C for 250-500 hours in either an oxidising or reducing environment. Corrosion damage was characterised using electron microscopy techniques, which identified networks of LBE intrusion beneath LBE-wetted surfaces. Under reducing conditions these networks are uniformly distributed, while they appear patchier and deeper under oxidising conditions. The individual intrusions preferentially follow microstructural features, initially along prior-austenite grain boundaries, followed by penetration down martensite lath boundaries. Local depletion of Cr was observed within 4 μm of the intrusions and along intersecting boundaries, suggesting local Cr dissolution as the main corrosion mechanism.
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Submitted 7 February, 2023;
originally announced February 2023.
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Seebeck-driven transverse thermoelectric generation in magnetic hybrid bulk materials
Authors:
Weinan Zhou,
Asuka Miura,
Takamasa Hirai,
Yuya Sakuraba,
Ken-ichi Uchida
Abstract:
The Seebeck-driven transverse thermoelectric generation in magnetic/thermoelectric hybrid materials (STTG) has been investigated in all-bulk hybrid materials. The transverse thermopower in a ferromagnetic Co$_2$MnGa/thermoelectric $n$-type Si hybrid bulk material with the adjusted dimensions reaches 16.0 $μ$V/K at room temperature with the aid of the STTG contribution, which is much larger than th…
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The Seebeck-driven transverse thermoelectric generation in magnetic/thermoelectric hybrid materials (STTG) has been investigated in all-bulk hybrid materials. The transverse thermopower in a ferromagnetic Co$_2$MnGa/thermoelectric $n$-type Si hybrid bulk material with the adjusted dimensions reaches 16.0 $μ$V/K at room temperature with the aid of the STTG contribution, which is much larger than the anomalous Nernst coefficient of the Co$_2$MnGa slab (6.8 $μ$V/K). Although this transverse thermopower is smaller than the value for previously reported thin-film-based hybrid materials, the hybrid bulk materials exhibit much larger electrical power owing to their small internal resistance. This demonstration confirms the validity of STTG in bulk materials and clarifies its potential as a thermal energy harvester.
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Submitted 24 January, 2023;
originally announced January 2023.
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Emergent Electronic Kagome Lattice in Correlated Charge-Density-Wave State of 1T-TaS$_2$
Authors:
Haoyu Dong,
Peihan Sun,
Le Lei,
Yanyan Geng,
Jianfeng Guo,
Yan Li,
Li Huang,
Rui Xu,
Fei Pang,
Wei Ji,
Weichang Zhou,
Zheng Liu,
Zhong-Yi Lu,
Hong-Jun Gao,
Kai Liu,
Zhihai Cheng
Abstract:
Quantum materials with tunable correlated and/or topological electronic states, such as the electronic Kagome lattice, provide an ideal platform to study the exotic quantum properties. However, the real-space investigations on the correlated electronic Kagome lattice have been rarely reported. Herein, we report on the electronic Kagome lattice emerging in the correlated charge-density-wave (CDW) s…
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Quantum materials with tunable correlated and/or topological electronic states, such as the electronic Kagome lattice, provide an ideal platform to study the exotic quantum properties. However, the real-space investigations on the correlated electronic Kagome lattice have been rarely reported. Herein, we report on the electronic Kagome lattice emerging in the correlated charge-density-wave (CDW) state of 1T-TaS$_2$ at ~200 K via variable-temperature scanning tunneling microscopy (VT-STM). This emergent Kagome lattice can be considered a fractional electron-filling superstructure with reduced translational and rotational symmetries, confirmed by STM measurements and density functional theory simulations. The characteristic band structure and density of states of this electronic Kagome lattice are further explored based on theoretical calculations. Our results demonstrate a self-organized electronic Kagome lattice from the correlated CDW state via the effective tuning parameter of temperature and provide a platform to directly explore the interplay of correlated electrons and topological physics.
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Submitted 14 January, 2023;
originally announced January 2023.
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Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications
Authors:
Xu-Dong Wang,
Wen Zhou,
Hangming Zhang,
Shehzad Ahmed,
Tiankuo Huang,
Riccardo Mazzarello,
En Ma,
Wei Zhang
Abstract:
Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic applications, due to their growth-driven crystallization features. However, it remains unknown whether Sb$_2$Te also forms a metastable crystalline phase upon…
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Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic applications, due to their growth-driven crystallization features. However, it remains unknown whether Sb$_2$Te also forms a metastable crystalline phase upon nanoseconds crystallization in devices, similar to the case of nucleation-driven Ge-Sb-Te alloys. Here, we carry out ab initio simulations to understand the changes in optical properties of amorphous Sb$_2$Te upon crystallization and post annealing. During the continuous transformation process, changes in the dielectric function are highly wavelength-dependent from the visible-light range towards the telecommunication band. Our finite-difference time-domain simulations based on the ab initio input reveal key differences in device output for color display and photonic memory applications upon tellurium ordering. Our work serves as an example of how multiscale simulations of materials can guide practical photonic phase-change applications.
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Submitted 7 August, 2023; v1 submitted 8 January, 2023;
originally announced January 2023.
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Direct electrical probing of anomalous Nernst conductivity
Authors:
Weinan Zhou,
Asuka Miura,
Yuya Sakuraba,
Ken-ichi Uchida
Abstract:
Despite the usefulness of the anomalous Nernst conductivity ($α^{A}_{xy}$) for studying electronic band structures and exploring magnetic materials with large transverse thermopower, there has not been a straightforward way to obtain $α^{A}_{xy}$ in the experiment. Here, we propose a simple and versatile method enabling direct electrical probing of $α^{A}_{xy}$, which is realized by creating a clo…
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Despite the usefulness of the anomalous Nernst conductivity ($α^{A}_{xy}$) for studying electronic band structures and exploring magnetic materials with large transverse thermopower, there has not been a straightforward way to obtain $α^{A}_{xy}$ in the experiment. Here, we propose a simple and versatile method enabling direct electrical probing of $α^{A}_{xy}$, which is realized by creating a closed circuit consisting of a target magnetic material and a non-magnetic conductor. This method was experimentally demonstrated on a thin film of magnetic Weyl semimetal Co$_{2}$MnGa, where the closed circuit was formed simply by connecting both ends of the Co$_{2}$MnGa film with a Au wire. A good approximation of $α^{A}_{xy}$ was obtained in a wide temperature range, validating the proposed method and exhibiting its potential for aiding the further development of topological materials science and transverse thermoelectrics.
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Submitted 29 June, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5
Authors:
Haitao Yang,
Yuhan Ye,
Zhen Zhao,
Jiali Liu,
Xin-Wei Yi,
Yuhang Zhang,
Jinan Shi,
Jing-Yang You,
Zihao Huang,
Bingjie Wang,
Jing Wang,
Hui Guo,
Xiao Lin,
Chengmin Shen,
Wu Zhou,
Hui Chen,
Xiaoli Dong,
Gang Su,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the s…
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Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the successful fabrication of single-crystals of titanium-based kagome metal CsTi3Bi5 and the observation of superconductivity and electronic nematicity. The onset of the superconducting transition temperature Tc is around 4.8 K. In sharp contrast to the charge density wave superconductor AV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translation symmetry, but breaks rotational symmetry and exhibits an electronic nematicity. The angular-dependent magnetoresistivity shows a remarkable two-fold rotational symmetry as the magnetic field rotates in the kagome plane. The scanning tunneling microscopy and spectroscopic imaging detect rotational-symmetry breaking C2 quasiparticle interference patterns (QPI) at low energies, providing further microscopic evidence for electronic nematicity. Combined with first-principle calculations, we find that the nematic QPI is orbital-selective and dominated by the Ti dxz and dyz orbitals, possibly originating from the intriguing orbital bond nematic order. Our findings in the new "135" material CsTi3Bi5 provide new directions for exploring the multi-orbital correlation effect and the role of orbital or bond order in the electron liquid crystal phases evidenced by the symmetry breaking states in kagome superconductors.
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Submitted 22 November, 2022;
originally announced November 2022.
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Ultrafast Switching in Synthetic Antiferromagnet with Bilayer Rare-Earth Transition-Metal Ferrimagnets
Authors:
Chung Ting Ma,
Wei Zhou,
S. Joseph Poon
Abstract:
In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with nanosecond speed through the spin torque effect. For faster switching, subpicosecond switching with femtoseconds laser pulse has been achieved in amorphous rar…
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In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with nanosecond speed through the spin torque effect. For faster switching, subpicosecond switching with femtoseconds laser pulse has been achieved in amorphous rare-earth transition-metal ferrimagnets. In this study, we employed atomistic simulations to investigate ultrafast switching in a synthetic antiferromagnet with bilayer amorphous FeGd ferrimagnets. Using a two-temperature model, we demonstrated ultrafast switching in this synthetic antiferromagnet without external magnetic fields. Furthermore, we showed that if we initially stabilize a skyrmion in this heterostructure, the ultrafast laser can switch the skyrmion state using the same mechanism. Furthermore, this bilayer design allows the control of each ferrimagnetic layer individually and opens the possibility for a magnetic tunnel junction.
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Submitted 25 October, 2022;
originally announced October 2022.
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Interfacial Mixing Effect in a Promising Skyrmionic Material: Ferrimagnetic Mn$_4$N
Authors:
Chung T. Ma,
Wei Zhou,
Brian J. Kirby,
S. Joseph Poon
Abstract:
Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films h…
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Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films have drawn considerable interest due to exhibiting perpendicular magnetic anisotropy, high domain-wall mobility, and good thermal stability. In this study, we employed X-ray photoelectron spectroscopy (XPS) and polarized neutron reflectometry (PNR) measurements to investigate the interfaces of an epitaxially-grown MgO/Mn$_4$N/Pt trilayer deposited at 450 $^{\circ}$C. XPS revealed the thickness of elemental mixing regions of near 5 nm at both interfaces. Using PNR, we found that these interfaces exhibit essentially zero net magnetization at room temperature. Despite the high-temperature deposition at 450 $^{\circ}$C, the thickness of mixing regions is comparable to those observed in magnetic films deposited at room temperature. Micromagnetic simulations show that this interfacial mixing should not deter the robust formation of small skyrmions, consistent with a recent experiment. The results obtained are encouraging in terms of the potential of integrating thermally stable Mn$_4$N into future spintronic devices.
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Submitted 4 August, 2022;
originally announced August 2022.
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High-Throughput Screening of Transition Metal Single-Atom Catalysts for Nitrogen Reduction Reaction
Authors:
Tingting Bo,
Shiqian Cao,
Nan Mu,
Ruixin Xu,
Yanyu Liu,
Wei Zhou
Abstract:
The discovery of metals as catalytic centers for nitrogen reduction reactions has stimulated great enthusiasm for single-atom catalysts. However, the poor activity and low selectivity of available SACs are far away from the industrial requirement. Through the high throughout first principles calculations, the doping engineering can effectively regulate the NRR performance of b-Sb monolayer. Especi…
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The discovery of metals as catalytic centers for nitrogen reduction reactions has stimulated great enthusiasm for single-atom catalysts. However, the poor activity and low selectivity of available SACs are far away from the industrial requirement. Through the high throughout first principles calculations, the doping engineering can effectively regulate the NRR performance of b-Sb monolayer. Especially, the origin of activated N2 is revealed from the perspective of the electronic structure of the active center. Among the 24 transition metal dopants, Re@Sb and Tc@Sb showed the best NRR catalytic performance with a low limiting potential. The Re@Sb and Tc@Sb also could significantly inhibit HER and achieve a high theoretical Faradaic efficiency of 100%. Our findings not only accelerate discovery of catalysts for ammonia synthesis but also contribute to further elucidate the structure-performance correlations.
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Submitted 11 July, 2022;
originally announced July 2022.
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Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in $\bf{MnBi_4Te_7}$ and $\bf{MnBi_6Te_{10}}$
Authors:
Xiaolong Xu,
Shiqi Yang,
Huan Wang,
Roger Guzman,
Yaozheng Zhu,
Yuxuan Peng,
Zhihao Zang,
Ming Xi,
Shangjie Tian,
Yanping Li,
Hechang Lei,
Zhaochu Luo,
Jinbo Yang,
Tianlong Xia,
Wu Zhou,
Yuan Huang,
Yu Ye
Abstract:
Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is cruc…
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Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic (FM)-antiferromagnetic (AFM) coexisting ground states that persist up to the 2-septuple layers (SLs) limit are observed and comprehensively investigated in $\rm{MnBi_4Te_7}$ ($n$ = 1) and $\rm{MnBi_6Te_{10}}$ ($n$ = 2). The ubiquitous Mn-Bi site mixing modifies or even changes the sign of the subtle inter-SL magnetic interactions, yielding a spatially inhomogeneous interlayer coupling. Further, a tunable exchange bias effect is observed in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2), arising from the coupling between the FM and AFM components in the ground state. Our work highlights a new approach toward the fine-tuning of magnetism and paves the way for further study of quantum phenomena in $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...) as well as their magnetic applications.
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Submitted 20 April, 2022;
originally announced April 2022.
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Simultaneously Enhanced Tenacity, Rupture Work, and Thermal Conductivity of Carbon Nanotubes Fibers by Increasing the Effective Tube Contribution
Authors:
Xiao Zhang,
Michael De Volder,
Wenbin Zhou,
Liron Issman,
Xiaojun Wei,
Adarsh Kaniyoor,
Jeronimo Terrones Portas,
Fiona Smail,
Zibo Wang,
Yanchun Wang,
Huaping Liu,
Weiya Zhou,
James Elliott,
Sishen Xie,
Adam Boies
Abstract:
Although individual carbon nanotubes (CNTs) are superior as constituents to polymer chains, the mechanical and thermal properties of CNT fibers (CNTFs) remain inferior to commercial synthetic fibers due to the lack of synthesis methods to embed CNTs effectively in superstructures. The application of conventional techniques for mechanical enhancement resulted in a mild improvement of target propert…
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Although individual carbon nanotubes (CNTs) are superior as constituents to polymer chains, the mechanical and thermal properties of CNT fibers (CNTFs) remain inferior to commercial synthetic fibers due to the lack of synthesis methods to embed CNTs effectively in superstructures. The application of conventional techniques for mechanical enhancement resulted in a mild improvement of target properties while achieving parity at best on others. In this work, a Double-Drawing technique is developed to deform continuously grown CNTFs and rearrange the constituent CNTs in both mesoscale and nanoscale morphology. Consequently, the mechanical and thermal properties of the resulting CNTFs can be jointly improved, and simultaneously reach their highest performances with specific strength (tenacity) $\rm\sim3.30\,N\,tex^{-1}$, work of rupture $\rm\sim70\,J\,g^{-1}$, and thermal conductivity $\rm\sim354\,W\,m^{-1}\,K^{-1}$, despite starting from commercial low-crystallinity materials ($I{\rm_G}:I{\rm_D}\sim5$). The processed CNTFs are more versatile than comparable carbon fiber, Zylon, Dyneema, and Kevlar. Furthermore, based on evidence of load transfer efficiency on individual CNTs measured with In-Situ Stretching Raman, we find the main contributors to property enhancements are (1) the increased proportion of load-bearing CNT bundles and (2) the extension of effective length of tubes attached on these bundles.
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Submitted 15 April, 2022; v1 submitted 9 April, 2022;
originally announced April 2022.
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One Dimensional Wormhole Corrosion in Metals
Authors:
Yang Yang,
Weiyue Zhou,
Sheng Yin,
Sarah Y. Wang,
Qin Yu,
Matthew J. Olszta,
Ya-Qian Zhang,
Steven E. Zeltmann,
Mingda Li,
Miaomiao Jin,
Daniel K. Schreiber,
Jim Ciston,
M. C. Scott,
John R. Scully,
Robert O. Ritchie,
Mark Asta,
Ju Li,
Michael P. Short,
Andrew M. Minor
Abstract:
Corrosion is a ubiquitous failure mode of materials in extreme environments. The more localized it is, the more difficult it is to detect and more deleterious its effects. Often, the progression of localized corrosion is accompanied by the evolution of porosity in materials, creating internal void-structures that facilitate the ingress of the external environment into the interior of the material,…
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Corrosion is a ubiquitous failure mode of materials in extreme environments. The more localized it is, the more difficult it is to detect and more deleterious its effects. Often, the progression of localized corrosion is accompanied by the evolution of porosity in materials, creating internal void-structures that facilitate the ingress of the external environment into the interior of the material, further accelerating the internal corrosion. Previously, the dominant morphology of such void-structures has been reported to be either three-dimensional (3D) or two-dimensional (2D). Here, we report a more localized form of corrosion, which we call 1D wormhole corrosion. Using electron tomography, we show multiple examples of this 1D and percolating morphology that manifests a significantly high aspect ratio differentiable from 2D and 3D corrosion. To understand the origin of this mechanism in a Ni-Cr alloy corroded by molten salt, we combined energy-filtered four-dimensional scanning transmission electron microscopy (EF-4D-STEM) and ab initio density functional theory (DFT) calculations to develop a vacancy mapping method with nanometer-resolution, identifying a remarkably high vacancy concentration in the diffusion-induced grain boundary migration (DIGM) zone, up to 100 times the equilibrium value at the melting point. These vacancy supersaturation regions act as the precursors of wormholes, and lead to the asymmetrical growth of voids along GBs. We show that similar 1D penetrating corrosion morphologies could also occur in other materials or corrosion conditions, implying the broad impact of this extremely localized corrosion mechanism. Deciphering the origins of 1D corrosion is an important step towards designing structural materials with enhanced corrosion resistance, and also offers new pathways to create ordered-porous materials for functional applications.
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Submitted 30 March, 2022;
originally announced March 2022.
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Seebeck-driven transverse thermoelectric generation in on-chip devices
Authors:
Weinan Zhou,
Takamasa Hirai,
Ken-ichi Uchida,
Yuya Sakuraba
Abstract:
An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $μ$V K$^{-1}$ due to STTG in on-chip devices. We deposited po…
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An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 $μ$V K$^{-1}$ due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiO$_{x}$ layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.
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Submitted 2 June, 2022; v1 submitted 22 March, 2022;
originally announced March 2022.
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Sm-Co-based amorphous alloy films for zero-field operation of transverse thermoelectric generation
Authors:
Rajkumar Modak,
Yuya Sakuraba,
Takamasa Hirai,
Takashi Yagi,
Hossein Sepehri-Amin,
Weinan Zhou,
Hiroto Masuda,
Takeshi Seki,
Koki Takanashi,
Tadakatsu Ohkubo,
Ken-ichi Uchida
Abstract:
Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric p…
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Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric performance of Sm-Co-based alloy films. The high-throughput material investigation revealed the best Sm-Co-based alloys with the large anomalous Nernst effect (ANE) as well as the anomalous Ettingshausen effect (AEE). In addition to ANE/AEE, we discovered unique and superior material properties in these alloys: the amorphous structure, low thermal conductivity, and large in-plane coercivity and remanent magnetization. These properties make it advantageous over conventional materials to realize heat flux sensing applications based on ANE, as our Sm-Co-based films can generate thermoelectric output without an external magnetic field. Importantly, the amorphous nature enables the fabrication of these films on various substrates including flexible sheets, making the large-scale and low-cost manufacturing easier. Our demonstration will provide a pathway to develop flexible transverse thermoelectric devices for smart thermal management.
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Submitted 18 November, 2022; v1 submitted 21 March, 2022;
originally announced March 2022.
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A Time-Dependent Random State Approach for Large-scale Density Functional Calculations
Authors:
Weiqing Zhou,
Shengjun Yuan
Abstract:
We develop a self-consistent first-principle method based on the density functional theory. Physical quantities, such as the density of states, Fermi energy and electron density are obtained using a time-dependent random state method without diagonalization. The numerical error for calculating either global or local variables always scales as $1/\sqrt{SN_{e}}$, where $N_{e}$ is the number of elect…
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We develop a self-consistent first-principle method based on the density functional theory. Physical quantities, such as the density of states, Fermi energy and electron density are obtained using a time-dependent random state method without diagonalization. The numerical error for calculating either global or local variables always scales as $1/\sqrt{SN_{e}}$, where $N_{e}$ is the number of electrons and $S$ is the number of random states, leading to a sublinear computational cost with the system size. In the limit of large systems, one random state could be enough to achieve reasonable accuracy. The method's accuracy and scaling properties are derived analytically and verified numerically in different condensed matter systems. Our time-dependent random state approach provides a powerful strategy for large-scale density functional calculations.
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Submitted 24 January, 2023; v1 submitted 7 March, 2022;
originally announced March 2022.
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High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$-TeO$_2$
Authors:
Shiying Guo,
Hengze Qu,
Wenhan Zhou,
Shengyuan A. Yang,
Yee Sin Ang,
Jing Lu,
Haibo Zeng,
Shengli Zhang
Abstract:
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $β$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure…
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Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $β$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $β$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $β$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 μA/μm according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $β$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $β$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.
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Submitted 16 February, 2022;
originally announced February 2022.