Showing 1–50 of 117 results for author: Pan, X

First-principles study of structural and electronic properties of multiferroic oxide Mn3TeO6 under high pressure

Authors: Xiao-Long Pan, Hao Wang, Lei Liu, Xiang-Rong Chen, Hua Y. Geng

Abstract: Mn3TeO6 (MTO) has been experimentally found to adopt a P21/n structure under high pressure, which exhibits a significantly smaller band gap compared to the atmospheric R-3 phase. In this study, we systematically investigate the magnetism, structural phase transition and electronic properties of MTO under high pressure through first-principles calculations. Both R-3 and P21/n phases of MTO are anti… ▽ More Mn3TeO6 (MTO) has been experimentally found to adopt a P21/n structure under high pressure, which exhibits a significantly smaller band gap compared to the atmospheric R-3 phase. In this study, we systematically investigate the magnetism, structural phase transition and electronic properties of MTO under high pressure through first-principles calculations. Both R-3 and P21/n phases of MTO are antiferromagnetic at zero temperature. The R-3 phase transforms to the P21/n phase at 7.58 GPa, accompanied by a considerable volume collapse of about 6.47%. Employing the accurate method that combines DFT+U and G0W0, the calculated band gap of R-3 phase at zero pressure is very close to the experimental values, while that of the P21/n phase is significantly overestimated. The main reason for this difference is that the experimental study incorrectly used the Kubelka-Munk plot for the indirect band gap to obtain the band gap of the P21/n phase instead of the Kubelka-Munk plot for the direct band gap. Furthermore, our study reveals that the transition from the R-3 phase to the P21/n phase is accompanied by a slight reduction in the band gap. △ Less

Submitted 21 July, 2024; originally announced July 2024.

Comments: 17 pages, 11 figures

Journal ref: Chin. Phys. B 33, 076102 (2024)

Emergent Moiré fringes in direct-grown quasicrystal

Authors: Jingwei Li, Kejie Bao, Honglin Sun, Xingxu Yan, Ting Huang, Qicheng Zhang, Yaoqiang Zhou, Zhenjing Liu, Paul Masih Das, Jiawen You, Jiong Zhao, Jianbin Xu, Xiaoqing Pan, Yongli Mi, Junyi Zhu, Zhaoli Gao

Abstract: Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple… ▽ More Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple graphene layers, using chemical vapor deposition (CVD). Strikingly, we observed periodic Moiré patterns in the quasicrystal, a finding that has not been previously reported in traditional alloy-based quasicrystals. The Moiré periodicity, varying with the parity of the constituent layers, aligns with the theoretical predictions that suggest a stress cancellation mechanism in force. The emergence of Moiré fringes is attributed to the spontaneous mismatched lattice constant in the oriented graphene layers, proving the existence of atomic relaxation. This phenomenon, which has been largely understudied in graphene systems with large twist angles, has now been validated through our use of scanning transmission electron microscopy (STEM). Our CVD-grown Moiré quasicrystal provides an ideal platform for exploring the unusual physical properties that arise from Moiré periodicity within quasicrystals. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Electrical Control Grain Dimensionality with Multilevel Magnetic Anisotropy

Authors: Shengyao Li, Sabpreet Bhatti, Siew Lang Teo, Ming Lin, Xinyue Pan, Zherui Yang, Peng Song, Wanghao Tian, Xinyu He, Jianwei Chai, Xian Jun Loh, Qiang Zhu, S. N. Piramanayagam, Xiao Renshaw Wang

Abstract: In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimens… ▽ More In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of spintronics. Typically, magnetic anisotropy is determined by grain dimensionality, which is set during the fabrication of magnetic thin films. Despite the intrinsic correlation between magnetic anisotropy and grain dimensionality, there is a lack of experimental evidence for electrically controlling grain dimensionality, thereby impeding the efficiency of magnetic anisotropy modulation. Here, we demonstrate an electric field control of grain dimensionality and prove it as the active mechanism for tuning interfacial magnetism. The reduction in grain dimensionality is associated with a transition from ferromagnetic to superparamagnetic behavior. We achieve a non-volatile and reversible modulation of the coercivity in both the ferromagnetic and superparamagnetic regimes. Subsequent electrical and elemental analysis confirms the variation in grain dimensionality upon the application of gate voltages, revealing a transition from a multidomain to a single-domain state accompanied by a reduction in grain dimensionality. Furthermore, we exploit the influence of grain dimensionality on domain wall motion, extending its applicability to multilevel magnetic memory and synaptic devices. Our results provide a strategy for tuning interfacial magnetism through grain size engineering for advancements in high-performance spintronics. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Atomic-scale tunable phonon transport at tailored grain boundaries

Authors: Xiaowang Wang, Chaitanya A. Gadre, Runqing Yang, Wanjuan Zou, Xing Bin, Christopher Addiego, Toshihiro Aoki, Yujie Quan, Wei-Tao Peng, Yifeng Huang, Chaojie Du, Mingjie Xu, Xingxu Yan, Ruqian Wu, Shyue Ping Ong, Bolin Liao, Penghui Cao, Xiaoqing Pan

Abstract: Manipulating thermal properties in materials has been of fundamental importance for advancing innovative technologies. Heat carriers such as phonons are impeded by breaking crystal symmetry or periodicity. Notable methods of impeding the phonon propagation include varying the density of defects, interfaces, and nanostructures, as well as changing composition. However, a robust link between the ind… ▽ More Manipulating thermal properties in materials has been of fundamental importance for advancing innovative technologies. Heat carriers such as phonons are impeded by breaking crystal symmetry or periodicity. Notable methods of impeding the phonon propagation include varying the density of defects, interfaces, and nanostructures, as well as changing composition. However, a robust link between the individual nanoscale defect structures, phonon states, and macroscopic thermal conductivity is lacking. Here we reveal from nanoscale structure-phonon mechanisms on how the grain boundary (GB) tilt and twist angles fundamentally drive the changes in atom rearrangements, exotic vibrational states, and finally macroscopic heat transport at different bicrystal strontium titanate GBs using emerging atomic resolution vibrational spectroscopy. The 10 deg and 22 deg tilt GBs exhibit reduced phonon populations by 54% and 16% compared to the bulk value, respectively, consistent with measured thermal conductivities. A tiny twist angle further introduces a fine and local tunning of thermal conductivity by introducing twist induced defects periodically embedded with the tilt induced GB defects. Our results demonstrate that varying the tilt angle coarsely modifies the phonon population along entire GB while varying the twist angle incurs a finer adjustment at periodic locations on the GB. Our study offers a systematic approach to understanding and manipulating cross GB thermal transport of arbitrary GBs predictably and precisely. △ Less

Submitted 13 May, 2024; originally announced May 2024.

A Framework of SO(3)-equivariant Non-linear Representation Learning and its Application to Electronic-Structure Hamiltonian Prediction

Authors: Shi Yin, Xinyang Pan, Fengyan Wang, Feng Wu, Lixin He

Abstract: We present both a theoretical and a methodological framework that addresses a critical challenge in applying deep learning to physical systems: the reconciliation of non-linear expressiveness with SO(3)-equivariance in predictions of SO(3)-equivariant quantities. Inspired by covariant theory in physics, we address this problem by exploring the mathematical relationships between SO(3)-invariant and… ▽ More We present both a theoretical and a methodological framework that addresses a critical challenge in applying deep learning to physical systems: the reconciliation of non-linear expressiveness with SO(3)-equivariance in predictions of SO(3)-equivariant quantities. Inspired by covariant theory in physics, we address this problem by exploring the mathematical relationships between SO(3)-invariant and SO(3)-equivariant quantities and their representations. We first construct theoretical SO(3)-invariant quantities derived from the SO(3)-equivariant regression targets, and use these invariant quantities as supervisory labels to guide the learning of high-quality SO(3)-invariant features. Given that SO(3)-invariance is preserved under non-linear operations, the encoding process for invariant features can extensively utilize non-linear mappings, thereby fully capturing the non-linear patterns inherent in physical systems. Building on this foundation, we propose a gradient-based mechanism to induce SO(3)-equivariant encodings of various degrees from the learned SO(3)-invariant features. This mechanism can incorporate non-linear expressive capabilities into SO(3)-equivariant representations, while theoretically preserving their equivariant properties as we prove. We apply our theory and method to the electronic-structure Hamiltonian prediction tasks, experimental results on eight benchmark databases covering multiple types of elements and challenging scenarios show dramatic breakthroughs on the state-of-the-art prediction accuracy, with improvements of up to 40% in predicting Hamiltonians and up to 76% in predicting downstream physical quantities such as occupied orbital energy. Our approach goes beyond handling physical systems and offers a promising general solution to the critical dilemma between equivariance and non-linear expressiveness for the deep learning paradigm. △ Less

Submitted 18 June, 2024; v1 submitted 9 May, 2024; originally announced May 2024.

Skyrmion-mechanical hybrid quantum systems: Manipulation of skyrmion qubits via phonons

Authors: Xue-Feng Pan, Xin-Lei Hei, Xiao-Yu Yao, Jia-Qiang Chen, Yu-Meng Ren, Xing-Liang Dong, Yi-Fan Qiao, Peng-Bo Li

Abstract: Skyrmion qubits are a new highly promising logic element for quantum information processing. However, their scalability to multiple interacting qubits remains challenging. We propose a hybrid quantum setup with skyrmion qubits strongly coupled to nanomechanical cantilevers via magnetic coupling, which harnesses phonons as quantum interfaces for the manipulation of distant skyrmion qubits. A linear… ▽ More Skyrmion qubits are a new highly promising logic element for quantum information processing. However, their scalability to multiple interacting qubits remains challenging. We propose a hybrid quantum setup with skyrmion qubits strongly coupled to nanomechanical cantilevers via magnetic coupling, which harnesses phonons as quantum interfaces for the manipulation of distant skyrmion qubits. A linear drive is utilized to achieve the modulation of the stiffness coefficient of the cantilever, resulting in an exponential enhancement of the coupling strength between the skyrmion qubit and the mechanical mode. We also consider the case of a topological resonator array, which allows us to study interactions between skyrmion qubits and topological phonon band structure, as well as chiral skyrmion-skyrmion interactions. The scheme suggested here offers a fascinating platform for investigating quantum information processing and quantum simulation with magnetic microstructures. △ Less

Submitted 14 April, 2024; originally announced April 2024.

Comments: To appear in PR Research, 16 pages, 9 figures

Magnon-Skyrmion Hybrid Quantum Systems: Tailoring Interactions via Magnons

Authors: Xue-Feng Pan, Peng-Bo Li, Xin-Lei Hei, Xichao Zhang, Masahito Mochizuki, Fu-Li Li, Franco Nori

Abstract: Coherent and dissipative interactions between different quantum systems are essential for the construction of hybrid quantum systems and the investigation of novel quantum phenomena. Here, we propose and analyze a magnon-skyrmion hybrid quantum system, consisting of a micromagnet and nearby magnetic skyrmions. We predict a strong coupling mechanism between the magnonic mode of the micromagnet and… ▽ More Coherent and dissipative interactions between different quantum systems are essential for the construction of hybrid quantum systems and the investigation of novel quantum phenomena. Here, we propose and analyze a magnon-skyrmion hybrid quantum system, consisting of a micromagnet and nearby magnetic skyrmions. We predict a strong coupling mechanism between the magnonic mode of the micromagnet and the quantized helicity degree of freedom of the skyrmion. We show that with this hybrid setup it is possible to induce magnon-mediated nonreciprocal interactions and responses between distant skyrmion qubits or between skyrmion qubits and other quantum systems like superconducting qubits. This work provides a quantum platform for the investigation of diverse quantum effects and quantum information processing with magnetic microstructures. △ Less

Submitted 14 April, 2024; originally announced April 2024.

Comments: To appear in PRL, 9 pages, 4 figures

Journal ref: Phys. Rev. Lett. 132, 193601 (2024)

Prediction of novel ordered phases in U-X (X= Zr, Sc, Ti, V, Cr, Y, Nb, Mo, Hf, Ta, W) binary alloys under high pressure

Authors: Xiao L. Pan, Hong X. Song, H. Wang, F. C. Wu, Y. C. Gan, Xiang R. Chen, Ying Chen, Hua Y. Geng

Abstract: U-based binary alloys have been widely adopted in fast nuclear reactors, but their stability under extreme conditions of high-pressure is almost unknown, mounting up to latent risk in applications. Here, possible ordered phases in U-Zr system up to 200 GPa are comprehensively investigated by unbiased first-principles structure prediction. Stable U2Zr, metastable U3Zr and U4Zr phases are discovered… ▽ More U-based binary alloys have been widely adopted in fast nuclear reactors, but their stability under extreme conditions of high-pressure is almost unknown, mounting up to latent risk in applications. Here, possible ordered phases in U-Zr system up to 200 GPa are comprehensively investigated by unbiased first-principles structure prediction. Stable U2Zr, metastable U3Zr and U4Zr phases are discovered for the first time, which exhibit strong stability under compression. They all are metallic, with 5f electrons of uranium dominating the electronic density of states near the Fermi level. Prominent ionic interactions between U and Zr atoms, as well as covalent interactions between adjacent uranium atoms, are found. The same strategy is applied to explore the stability of ordered phases in other U-based binary transition metal alloys, U-X (X= Sc, Ti, V, Cr, Y, Nb, Mo, Hf, Ta, W). Stable and metastable ordered phases similar to U-Zr alloy are unveiled, all with similar electronic structures. For these alloys, we find that the structure of U2X (X=Zr, Ti, Hf) hosts a unique hybrid phase transition similar to U2Nb, which is a superposition of a first-order transition and a second-order transition. The prediction of these novel phases not only refutes the stability of the long-believed ordered phase I4/mmm-U2Mo, but also rewrites the phase diagrams of U-X (X= Zr, Sc, Ti, V, Cr, Nb, Mo, Hf, Ta) alloys under high pressure. All of these findings promote our understanding of the high-pressure behavior of the broad category of U-based binary alloys with transition metals. △ Less

Submitted 24 February, 2024; originally announced February 2024.

Comments: 27 pages, 12 figures, with supplementary material

Journal ref: Acta Materialia 263, 119489 (2024)

Inelastic electron scattering at large angles: the phonon polariton contribution

Authors: Hongbin Yang, Paul Zeiger, Andrea Konečná, Lu Han, Guangyao Miao, Yinong Zhou, Yifeng Huang, Xingxu Yan, Weihua Wang, Jiandong Guo, Yuefeng Nie, Ruqian Wu, Jan Rusz, Xiaoqing Pan

Abstract: We explore the inelastic electron scattering in SrTiO3, PbTiO3, and SiC in their phonon energy range, challenging the assumption that phonon polaritons are excluded at large angles in high-resolution transmission electron energy-loss spectroscopy. We demonstrate that through multiple scattering, the electron beam can excite both phonons and phonon polaritons, and the relative proportion of each va… ▽ More We explore the inelastic electron scattering in SrTiO3, PbTiO3, and SiC in their phonon energy range, challenging the assumption that phonon polaritons are excluded at large angles in high-resolution transmission electron energy-loss spectroscopy. We demonstrate that through multiple scattering, the electron beam can excite both phonons and phonon polaritons, and the relative proportion of each varies depending on the structure factor and scattering angle. Integrating dielectric theory, density functional theory, and multi-slice simulations, we provide a comprehensive framework for understanding these interactions in materials with polar optical phonons. △ Less

Submitted 9 January, 2024; v1 submitted 9 January, 2024; originally announced January 2024.

Towards Harmonization of SO(3)-Equivariance and Expressiveness: a Hybrid Deep Learning Framework for Electronic-Structure Hamiltonian Prediction

Authors: Shi Yin, Xinyang Pan, Xudong Zhu, Tianyu Gao, Haochong Zhang, Feng Wu, Lixin He

Abstract: Deep learning for predicting the electronic-structure Hamiltonian of quantum systems necessitates satisfying the covariance laws, among which achieving SO(3)-equivariance without sacrificing the non-linear expressive capability of networks remains unsolved. To navigate the harmonization between equivariance and expressiveness, we propose a deep learning method synergizing two distinct categories o… ▽ More Deep learning for predicting the electronic-structure Hamiltonian of quantum systems necessitates satisfying the covariance laws, among which achieving SO(3)-equivariance without sacrificing the non-linear expressive capability of networks remains unsolved. To navigate the harmonization between equivariance and expressiveness, we propose a deep learning method synergizing two distinct categories of neural mechanisms as a two-stage encoding and regression framework. The first stage corresponds to group theory-based neural mechanisms with inherent SO(3)-equivariant properties prior to the parameter learning process, while the second stage is characterized by a non-linear 3D graph Transformer network we propose, featuring high capability on non-linear expressiveness. The novel combination lies in the point that, the first stage predicts baseline Hamiltonians with abundant SO(3)-equivariant features extracted, assisting the second stage in empirical learning of equivariance; and in turn, the second stage refines the first stage's output as a fine-grained prediction of Hamiltonians using powerful non-linear neural mappings, compensating for the intrinsic weakness on non-linear expressiveness capability of mechanisms in the first stage. Our method enables precise, generalizable predictions while capturing SO(3)-equivariance under rotational transformations, and achieves state-of-the-art performance in Hamiltonian prediction on six benchmark databases. △ Less

Submitted 21 June, 2024; v1 submitted 1 January, 2024; originally announced January 2024.

Frustrated metastable-to-equilibrium grain boundary structural transition in NbMoTaW due to segregation and chemical complexity

Authors: Ian Geiger, Diran Apelian, Xiaoqing Pan, Penghui Cao, Jian Luo, Timothy J. Rupert

Abstract: Grain boundary structural transitions can lead to significant changes in the properties and performance of materials. In multi-principal element alloys, understanding these transitions becomes complex due to phenomena such as local chemical ordering and multi-component segregation. Using atomistic simulations, we explore a metastable-to-equilibrium grain boundary structural transition in NbMoTaW.… ▽ More Grain boundary structural transitions can lead to significant changes in the properties and performance of materials. In multi-principal element alloys, understanding these transitions becomes complex due to phenomena such as local chemical ordering and multi-component segregation. Using atomistic simulations, we explore a metastable-to-equilibrium grain boundary structural transition in NbMoTaW. The transition, characterized by structural disordering and reduced free volume, shows high sensitivity to its local chemical environment. Most notably, the transition temperature range of the alloy is more than twice that of a pure metal. Differences in composition between coexisting metastable and equilibrium structures highlight the change in local site availability due to structural relaxation. Further examination of grain boundaries with fixed chemical states at varying temperatures reveals that the amount of segregation significantly influences the onset temperature yet has minimal effect on the transition width. These insights underscore the profound effects of chemical complexity and ordering on grain boundary transitions in complex concentrated alloys, marking a meaningful advancement in our understanding of grain boundary behavior at the atomic level. △ Less

Submitted 12 March, 2024; v1 submitted 21 December, 2023; originally announced December 2023.

Real-Space Visualization of Frequency-Dependent Anisotropy of Atomic Vibrations

Authors: Xingxu Yan, Paul M. Zeiger, Yifeng Huang, Haoying Sun, Jie Li, Chaitanya A. Gadre, Hongbin Yang, Ri He, Toshihiro Aoki, Zhicheng Zhong, Yuefeng Nie, Ruqian Wu, Ján Rusz, Xiaoqing Pan

Abstract: The underlying dielectric properties of materials, intertwined with intriguing phenomena such as topological polariton modes and anisotropic thermal conductivities, stem from the anisotropy in atomic vibrations. Conventionally, X-ray diffraction techniques have been employed to estimate thermal ellipsoids of distinct elements, albeit lacking the desired spatial and energy resolutions. Here we intr… ▽ More The underlying dielectric properties of materials, intertwined with intriguing phenomena such as topological polariton modes and anisotropic thermal conductivities, stem from the anisotropy in atomic vibrations. Conventionally, X-ray diffraction techniques have been employed to estimate thermal ellipsoids of distinct elements, albeit lacking the desired spatial and energy resolutions. Here we introduce a novel approach utilizing the dark-field monochromated electron energy-loss spectroscopy for momentum-selective vibrational spectroscopy, enabling the cartographic delineation of variations of phonon polarization vectors. By applying this technique to centrosymmetric cubic-phase strontium titanate, we successfully discern two types of oxygen atoms exhibiting contrasting vibrational anisotropies below and above 60 meV due to their frequency-linked thermal ellipsoids. This method establishes a new pathway to visualize phonon eigenvectors at specific crystalline sites for diverse elements, thus delving into uncharted realms of dielectric, optical, and thermal property investigations with unprecedented spatial resolutions. △ Less

Submitted 4 December, 2023; originally announced December 2023.

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Authors: Ryosuke Shimizu, Diyi Cheng, Guomin Zhu, Bing Han, Thomas S. Marchese, Randall Burger, Mingjie Xu, Xiaoqing Pan, Minghao Zhang, Ying Shirley Meng

Abstract: Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compos… ▽ More Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices. △ Less

Submitted 30 September, 2023; originally announced October 2023.

Electrostatic environment and Majorana bound states in full-shell topological insulator nanowires

Authors: Li Chen, Xiao-Hong Pan, Zhan Cao, Dong E. Liu, Xin Liu

Abstract: The combination of a superconductor (SC) and a topological insulator (TI) nanowire was proposed as a potential candidate for realizing Majorana zero modes (MZMs). In this study, we adopt the Schrödinger-Poisson formalism to incorporate the electrostatic environment inside the nanowire and systematically explore its topological properties. Our calculations reveal that the proximity to the SC induce… ▽ More The combination of a superconductor (SC) and a topological insulator (TI) nanowire was proposed as a potential candidate for realizing Majorana zero modes (MZMs). In this study, we adopt the Schrödinger-Poisson formalism to incorporate the electrostatic environment inside the nanowire and systematically explore its topological properties. Our calculations reveal that the proximity to the SC induces a band bending effect, leading to a non-uniform potential across the TI nanowire. As a consequence, there is an upward shift of the Fermi level within the conduction band. This gives rise to the coexistence of surface and bulk states, localized in an accumulation layer adjacent to the TI-SC interface. When magnetic flux is applied, these occupied states have different flux-penetration areas, suppressing the superconducting gap. However, this impact can be mitigated by increasing the radius of the nanowire. Finally, We demonstrate that MZMs can be achieved across a wide range of parameters centered around one applied flux quantum, $φ_0 = h/2e$. Within this regime, MZMs can be realized even in the presence of conduction bands, which are not affected by the band bending effect. These findings provide valuable insights into the practical realization of MZMs in TI nanowire-based devices, especially in the presence of a complicated electrostatic environment. △ Less

Submitted 22 September, 2023; v1 submitted 20 September, 2023; originally announced September 2023.

Spin injection across a III-V/chiral perovskite interface enabling spin accumulation at room temperature

Authors: Matthew P. Hautzinger, Xin Pan, Steven C. Hayden, Jiselle Y. Ye, Qi Jiang, Mickey J. Wilson, Yifan Dong, Emily K. Raulerson, Ian A. Leahy, Chun-Sheng Jiang, Joseph M. Luther, Yuan Lu, Katherine Jungjohann, Z. Valy Vardeny, Joseph J. Berry, Kirstin Alberi, Matthew C. Beard

Abstract: Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a… ▽ More Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of opto-electronic functionality. Current efforts are limited due to inherent inefficiencies associated with spin injection into semiconductor structures. Here, we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well (MQW) light emitting diode (LED). The spin accumulation in the MQW is detected via emission of circularly polarized light with a degree of polarization of up to ~15%. The chiral perovskite/III-V interface was characterized with X-ray photoemission spectroscopy (XPS), cross sectional scanning Kelvin probe force microscopy, and cross section transmission electron microscopy (TEM) imaging, showing a clean semiconductor/semiconductor interface where the fermi-level can equilibrate. These findings demonstrate chiral perovskite semiconductors can transform well-developed semiconductor platforms to ones that can also control spin. △ Less

Submitted 14 November, 2023; v1 submitted 8 September, 2023; originally announced September 2023.

Enhanced ferromagnetism in artificially stretched lattice in quasi two-dimensional Cr2Ge2Te6

Authors: Hiroshi Idzuchi, Andres E Llacsahuanga Allcca, Anh Khoa Augustin Lu, Mitsuhiro Saito, Michel Houssa, Ruishen Meng, Kazutoshi Inoue, Xing-Chen Pan, Katsumi Tanigaki, Yuichi Ikuhara, Takeshi Nakanishi, Yong P Chen

Abstract: In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations of the control in magnetic properties with expanding the lattice structure. Here, we observe that the Curie temperature (Tc) of quasi two-dimensional… ▽ More In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations of the control in magnetic properties with expanding the lattice structure. Here, we observe that the Curie temperature (Tc) of quasi two-dimensional Cr2Ge2Te6 with NiO overlayer doubles from ~60 K to ~120 K, describe a clear correlation of magnetic properties with lattice expansion, which is characterized by several probes and computational approaches, and address on the mechanisms leading to the increase in Tc via the change in exchange interactions. △ Less

Submitted 15 June, 2023; originally announced June 2023.

Neural Network Kinetics for Exploring Diffusion Multiplicity and Chemical Ordering in Compositionally Complex Materials

Authors: Bin Xing, Timothy J. Rupert, Xiaoqing Pan, Penghui Cao

Abstract: Diffusion involving atom transport from one location to another governs many important processes and behaviors such as precipitation and phase nucleation. Local chemical complexity in compositionally complex alloys poses challenges for modeling atomic diffusion and the resulting formation of chemically ordered structures. Here, we introduce a neural network kinetics (NNK) scheme that predicts and… ▽ More Diffusion involving atom transport from one location to another governs many important processes and behaviors such as precipitation and phase nucleation. Local chemical complexity in compositionally complex alloys poses challenges for modeling atomic diffusion and the resulting formation of chemically ordered structures. Here, we introduce a neural network kinetics (NNK) scheme that predicts and simulates diffusion-induced chemical and structural evolution in complex concentrated chemical environments. The framework is grounded on efficient on-lattice structure and chemistry representation combined with neural networks, enabling precise prediction of all path-dependent migration barriers and individual atom jumps. Using this method, we study the temperature-dependent local chemical ordering in a refractory Nb-Mo-Ta alloy and reveal a critical temperature at which the B2 order reaches a maximum. Our atomic jump randomness map exhibits the highest diffusion heterogeneity (multiplicity) in the vicinity of this characteristic temperature, which is closely related to chemical ordering and B2 structure formation. The scalable NNK framework provides a promising new avenue to exploring diffusion-related properties in the vast compositional space within which extraordinary properties are hidden. △ Less

Submitted 6 April, 2024; v1 submitted 6 April, 2023; originally announced April 2023.

Journal ref: Nat Commun 15, 3879 (2024)

Prediction of novel final phases in aged uranium-niobium alloys

Authors: Xiao L. Pan, Hao Wang, Lei L. Zhang, Yu F. Wang, Xiang R. Chen, Hua Y. Geng, Ying Chen

Abstract: Ordered intermetallics are long believed to be the final products of the aging of U-Nb solid solutions at low temperatures, a crucial property for the practical applications of this alloy in engineering and industry. However, such conjectured ordered compounds have not been experimentally or theoretically established. Herein, numerical evidence for ordered intermetallic U-Nb compounds is presented… ▽ More Ordered intermetallics are long believed to be the final products of the aging of U-Nb solid solutions at low temperatures, a crucial property for the practical applications of this alloy in engineering and industry. However, such conjectured ordered compounds have not been experimentally or theoretically established. Herein, numerical evidence for ordered intermetallic U-Nb compounds is presented using thorough first-principles structure predictions up to 500 GPa. Two stable U2Nb compounds and one metastable U2Nb and one metastable U3Nb were discovered. A unique hybridized transition driven by pressure was observed in U2Nb, which is a superposition of one first-order transition and another second-order transition, leading to striking features near the transition pressure of 21.6 GPa. The decomposition limit of these compounds at high temperature was also investigated. The strong stability of U2Nb in the region of low pressure and high temperature was revealed. This discovery of ordered U2Nb and its strong stability over a wide pressure range completely changed the phase diagram of U-Nb alloys and shed new light on the dynamic response and aging mechanism of U-Nb alloys. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 21 pages, 16 figures, with Supplementary Material

Journal ref: Journal of Nuclear Materials 579 (2023) 154394

Meissner effect induced Majorana zero modes at small magnetic field

Authors: Xiao-Hong Pan, Li Chen, Dong E. Liu, Fu-Chun Zhang, Xin Liu

Abstract: One fundamental difficulty in realizing Majorana zero modes (MZMs) is the required high magnetic field, which causes serious issues, e.g., shrinks the superconducting gap, reduces topological region, and weakens their robustness against disorder. In this work, we propose that the Meissner effect can bring the topological superconducting phase to a superconductor/topological-insulator/superconducto… ▽ More One fundamental difficulty in realizing Majorana zero modes (MZMs) is the required high magnetic field, which causes serious issues, e.g., shrinks the superconducting gap, reduces topological region, and weakens their robustness against disorder. In this work, we propose that the Meissner effect can bring the topological superconducting phase to a superconductor/topological-insulator/superconductor (SC/TI/SC) hybrid system. Remarkably, the required magnetic field strength ($<$10 mT) to support MZMs has been reduced by several orders of magnitude compared to that ($>$0.5 T) in the previous schemes. Tuning the phase difference between the top and bottom superconductors can control the number and position of the MZMs. In addition, we account for the electrostatic potential in the superconductor/topological-insulator (SC/TI) interface through the self-consistent Schrödinger-Poisson calculation, which shows the experimental accessibility of our proposal. Our proposal only needs a small magnetic eld of less than 10 mT and is robust against the chemical potential fluctuation, which makes SC/TI/SC hybrid an ideal Majorana platform. △ Less

Submitted 9 February, 2023; originally announced February 2023.

Comments: 7 pages, 4 figures, and Supplemental material

Theoretical study of phonon-mediated superconductivity beyond Migdal-Eliashberg approximation and Coulomb pseudopotential

Authors: Jie Huang, Zhao-Kun Yang, Xiao-Yin Pan, Guo-Zhu Liu

Abstract: In previous theoretical studies of phonon-mediated superconductors, the electron-phonon coupling is treated by solving the Migdal-Eliashberg equations under the bare vertex approximation, whereas the effect of Coulomb repulsion is incorporated by introducing one single pseudopotential parameter. These two approximations become unreliable in low carrier-density superconductors in which the vertex c… ▽ More In previous theoretical studies of phonon-mediated superconductors, the electron-phonon coupling is treated by solving the Migdal-Eliashberg equations under the bare vertex approximation, whereas the effect of Coulomb repulsion is incorporated by introducing one single pseudopotential parameter. These two approximations become unreliable in low carrier-density superconductors in which the vertex corrections are not small and the Coulomb interaction is poorly screened. Here, we shall go beyond these two approximations and employ the Dyson-Schwinger equation approach to handle the interplay of electron-phonon interaction and Coulomb interaction in a self-consistent way. We first derive the exact Dyson-Schwinger integral equation of the full electron propagator. Such an equation contains several unknown single-particle propagators and fermion-boson vertex functions, and thus seems to be intractable. To solve this difficulty, we further derive a number of identities satisfied by all the relevant propagators and vertex functions and then use these identities to show that the exact Dyson-Schwinger equation of electron propagator is actually self-closed. This self-closed equation takes into account not only all the vertex corrections, but also the mutual influence between electron-phonon interaction and Coulomb interaction. Solving it by using proper numerical methods leads to the superconducting temperature $T_{c}$ and other quantities. As an application of the approach, we compute the $T_{c}$ of the interfacial superconductivity realized in the one-unit-cell FeSe/SrTiO$_{3}$ system. We find that $T_{c}$ can be strongly influenced by the vertex corrections and the competition between phonon-mediated attraction and Coulomb repulsion. △ Less

Submitted 23 October, 2023; v1 submitted 31 January, 2023; originally announced January 2023.

Comments: 13 + 9 pages, 1 figure

Journal ref: Phys. Rev. B 108, 144507 (2023)

Enhanced tripartite interactions in spin-magnon-mechanical hybrid systems

Authors: Xin-Lei Hei, Peng-Bo Li, Xue-Feng Pan, Franco Nori

Abstract: Coherent tripartite interactions among degrees of freedom of completely different nature are instrumental for quantum information and simulation technologies, but they are generally difficult to realize and remain largely unexplored. Here, we predict a tripartite coupling mechanism in a hybrid setup comprising a single NV center and a micromagnet. We propose to realize direct and strong tripartite… ▽ More Coherent tripartite interactions among degrees of freedom of completely different nature are instrumental for quantum information and simulation technologies, but they are generally difficult to realize and remain largely unexplored. Here, we predict a tripartite coupling mechanism in a hybrid setup comprising a single NV center and a micromagnet. We propose to realize direct and strong tripartite interactions among single NV spins, magnons and phonons via modulating the relative motion between the NV center and the micromagnet. Specifically, by introducing a parametric drive (two-phonon drive) to modulate the mechanical motion (such as the center-of-mass motion of a NV spin in diamond trapped in an electrical trap or a levitated micromagnet in a magnetic trap), we can obtain a tunable and strong spin-magnon-phonon coupling at the single quantum level, with up to two orders of magnitude enhancement for the tripartite coupling strength. This enables, for example, tripartite entanglement among solid-state spins, magnons, and mechanical motions in quantum spin-magnonics-mechanics with realistic experimental parameters. This protocol can be readily implemented with the well-developed techniques in ion traps or magnetic traps, and could pave the way for general applications in quantum simulations and information processing based on directly and strongly coupled tripartite systems. △ Less

Submitted 25 January, 2023; originally announced January 2023.

Comments: To appear in PRL, 9 pages, 4 figures

Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation

Authors: Dong Pu, Muhammad Abid Anwar, Jiachao Zhou, Renwei Mao, Xin Pan, Jian Chai, Feng Tian, Hua Wang, Huan Hu, Yang Xu

Abstract: Graphene-silicon Schottky junction (GSJ) which has the potential for large-scale manufacturing and integration can bring new opportunities to Schottky solar cells for photovoltaic (PV) power conversion. However, the essential power conversion limitation for these devices lies in the small open-circuit voltage ($V_{oc}$), which depends on the Schottky barrier height (SBH). In this study, we introdu… ▽ More Graphene-silicon Schottky junction (GSJ) which has the potential for large-scale manufacturing and integration can bring new opportunities to Schottky solar cells for photovoltaic (PV) power conversion. However, the essential power conversion limitation for these devices lies in the small open-circuit voltage ($V_{oc}$), which depends on the Schottky barrier height (SBH). In this study, we introduce an electromechanical method based on the flexoelectric effect to enhance the PV efficiency in GSJ. By atomic force microscope (AFM) tip-based indentation and in situ current measurement, the current-voltage (I-V) responses under flexoelectric strain gradient are obtained. The $V_{oc}$ is observed to increase for up to 20$\%$, leading to an evident improvement of the power conversion efficiency. Our studies suggest that strain gradient may offer unprecedented opportunities for the development of GSJ based flexo-photovoltaic applications. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Comments: 7 pages, 4 figures. The following article has been accepted by Applied Physics Letters

Compositionally Complex Perovskite Oxides as a New Class of Li-Ion Solid Electrolytes

Authors: Shu-Ting Ko, Tom Lee, Ji Qi, Dawei Zhang, Wei-Tao Peng, Xin Wang, Wei-Che Tsai, Shikai Sun, Zhaokun Wang, William J. Bowman, Shyue Ping Ong, Xiaoqing Pan, Jian Luo

Abstract: Compositionally complex ceramics (CCCs), including high-entropy ceramics (HECs) as a subclass, offer new opportunities of materials discovery beyond the traditional methodology of searching new stoichiometric compounds. Herein, we establish new strategies of tailoring CCCs via a seamless combination of (1) non-equimolar compositional designs and (2) controlling microstructures and interfaces. Usin… ▽ More Compositionally complex ceramics (CCCs), including high-entropy ceramics (HECs) as a subclass, offer new opportunities of materials discovery beyond the traditional methodology of searching new stoichiometric compounds. Herein, we establish new strategies of tailoring CCCs via a seamless combination of (1) non-equimolar compositional designs and (2) controlling microstructures and interfaces. Using oxide solid electrolytes for all-solid-state batteries as an exemplar, we validate these new strategies via discovering a new class of compositionally complex perovskite oxides (CCPOs) to show the possibility of improving ionic conductivities beyond the limit of conventional doping. As an example (amongst the 28 CCPOs examined), we demonstrate that the ionic conductivity can be improved by >60% in (Li0.375Sr0.4375)(Ta0.375Nb0.375Zr0.125Hf0.125)O3-δ, in comparison with the state-of-art (Li0.375Sr0.4375)(Ta0.75Zr0.25)O3-δ (LSTZ) baseline, via maintaining comparable electrochemical stability. Furthermore, the ionic conductivity can be improved by another >70% via grain boundary (GB) engineering, achieving >270% of the LSTZ baseline. This work suggests transformative new strategies for designing and tailoring HECs and CCCs, thereby opening a new window for discovering materials for energy storage and many other applications. △ Less

Submitted 27 December, 2022; originally announced December 2022.

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Authors: Laisi Chen, Amy X. Wu, Naol Tulu, Joshua Wang, Adrian Juanson, Kenji Watanabe, Takashi Taniguchi, Michael T. Pettes, Marshall Campbell, Chaitanya A. Gadre, Yinong Zhou, Hangman Chen, Penghui Cao, Luis A. Jauregui, Ruqian Wu, Xiaoqing Pan, Javier D. Sanchez-Yamagishi

Abstract: Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron n… ▽ More Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels, which have eluded previous studies. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure. △ Less

Submitted 9 October, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Charge Crowding in Graphene-Silicon Diodes

Authors: Muhammad Abid Anwar, Munir Ali, Dong Pu, Srikrishna Chanakya Bodepudi, Xinyu Zhu, Xin Pan, Jianhang Lv, Khurram Shehzad, Xiaochen Wang, Ali Imran, Yuda Zhao, Shurong Dong, Yang Xu, Bin Yu, Huan Hu

Abstract: The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic pr… ▽ More The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge transport effects at the 2D-3D ohmic contact coupled with the thermionic injection model for graphene/Si Schottky junction. Here, w e focus on the intrinsic properties of graphene-metal contacts, paying particular attention to the nature of the contact failure mechanism under high electrical stress. According to our findings, severe current crowding (CC) effects in highly conductive electrical contact significantly affect device failure that can be reduced by spatially varying the contact properties and geometry. The impact of electrical breakdown on material degradation is systematically analyzed by atomic force, Raman, scanning electron, and energy dispersive X-ray spectroscopies. Our devices withstand high electrostatic discharge spikes over a longer period, manifesting high robustness and operational stability. This research paves the way towards a highly robust and reliable graphene/Si heterostructure in futuristic on-chip integration in dynamic switching. The methods we employed here can be extended for other nanoscale electronic devices based on 2D-3D interfaces △ Less

Submitted 7 November, 2022; originally announced November 2022.

Enhanced spin-mechanical interaction with levitated micromagnets

Authors: Xue-Feng Pan, Xin-Lei Hei, Xing-Liang Dong, Jia-Qiang Chen, Cai-Peng Shen, Hamad Ali, Peng-Bo Li

Abstract: Spin-mechanical hybrid systems have been widely used in quantum information processing. However, the spin-mechanical interaction is generally weak, making it a critical challenge to enhance the spin-mechanical interaction into the strong coupling or even ultra-strong coupling regime. Here, we propose a protocol that can significantly enhance the spin-mechanical coupling strength with a diamond spi… ▽ More Spin-mechanical hybrid systems have been widely used in quantum information processing. However, the spin-mechanical interaction is generally weak, making it a critical challenge to enhance the spin-mechanical interaction into the strong coupling or even ultra-strong coupling regime. Here, we propose a protocol that can significantly enhance the spin-mechanical coupling strength with a diamond spin vacancy and a levitated micromagnet. A driving electrical current is used to modulate the mechanical motion of the levitated micromagnet, which induces a two-phonon drive and can exponentially enhance the spin-phonon and phonon-medicated spin-spin coupling strengths. Furthermore, a high fidelity Schrodinger cat state and an unconventional 2-qubit geometric phase gate with high fidelity and faster gate speed can be achieved using this hybrid system. This protocol provides a promising platform for quantum information processing with NV spins coupled to levitated micromagnets. △ Less

Submitted 12 October, 2022; v1 submitted 10 October, 2022; originally announced October 2022.

Comments: 13 pages, 8 figures

Lattice dynamics and elastic properties of alpha-U at high-temperature and high-pressure by machine learning potential simulations

Authors: Hao Wang, Xiao-Long Pan, Yu-Feng Wang, Xiang-Rong Chen, Yi-Xian Wang, Hua Y. Geng

Abstract: Studying the physical properties of materials under high pressure and temperature through experiments is difficult. Theoretical simulations can compensate for this deficiency. Currently, large-scale simulations using machine learning force fields are gaining popularity. As an important nuclear energy material, the evolution of the physical properties of uranium under extreme conditions is still un… ▽ More Studying the physical properties of materials under high pressure and temperature through experiments is difficult. Theoretical simulations can compensate for this deficiency. Currently, large-scale simulations using machine learning force fields are gaining popularity. As an important nuclear energy material, the evolution of the physical properties of uranium under extreme conditions is still unclear. Herein, we trained an accurate machine learning force field on alpha-U and predicted the lattice dynamics and elastic properties at high pressures and temperatures. The force field agrees well with the ab initio molecular dynamics (AIMD) and experimental results, and it exhibits higher accuracy than classical potentials. Based on the high-temperature lattice dynamics study, we first present the temperature-pressure range in which the Kohn anomalous behavior of the $Σ$4 optical mode exists. Phonon spectral function analysis showed that the phonon anharmonicity of alpha-U is very weak. We predict that the single-crystal elastic constants C44, C55, C66, polycrystalline modulus (E,G), and polycrystalline sound velocity ($C_L$,$C_S$) have strong heating-induced softening. All the elastic moduli exhibited compression-induced hardening behavior. The Poisson's ratio shows that it is difficult to compress alpha-U at high pressures and temperatures. Moreover, we observed that the material becomes substantially more anisotropic at high pressures and temperatures. The accurate predictions of alpha-U demonstrate the reliability of the method. This versatile method facilitates the study of other complex metallic materials. △ Less

Submitted 4 October, 2022; originally announced October 2022.

Comments: 21 pages, 9 figures, with Supplementary Material

Journal ref: Journal of Nuclear Materials 572, 154029 (2022)

Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures

Authors: Paulina Majchrzak, Klara Volckaert, Deepnarayan Biswas, Denny Puntel, Wibke Bronsch, Federico Cilento, Xing-Chen Pan, Yong P. Chen, Søren Ulstrup

Abstract: Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following… ▽ More Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy. We gain access to the out-of-equilibrium surface electronic structure of both MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ surface terminations of MnBi$_4$Te$_7$, revealing an instantaneous occupation of states that are resonant with the optical excitation in the Bi$_2$Te$_3$ layer followed by carrier extraction into the adjacent MnBi$_2$Te$_4$ layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by in-plane phonon scattering with significantly slower relaxation times in the magnetic MnBi$_2$Te$_4$ septuple layers. The competition of interlayer charge transfer and intralayer phonon scattering establishes MnBi$_2$Te$_4$-based compounds as a platform for controlling ultrafast charge transfer processes in combination with magnetism and topology in van der Waals heterostructures. △ Less

Submitted 8 August, 2022; originally announced August 2022.

Comments: 17 pages, 4 figures

Journal ref: A substantially revised version is published in Nano Letters (2023)

Gate-tunable anomalous Hall effect in stacked van der Waals ferromagnetic insulator - topological insulator heterostructures

Authors: Andres E. Llacsahuanga Allcca, Xing-Chen Pan, Ireneusz Miotkowski, Katsumi Tanigaki, Yong P. Chen

Abstract: The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperature… ▽ More The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperatures to observe the QAHI due to issues such as the added disorder with ferromagnetic dopants. Another promising scheme is using the magnetic proximity effect with a magnetic insulator to magnetize the topological insulator. Most of these heterostructures are synthesized so far by growth techniques such as molecular beam epitaxy and metallic organic chemical vapor deposition. These are not readily applicable to allow mixing and matching many of the available ferromagnetic and topological insulators due to difference in growth conditions and lattice mismatch. Here, we demonstrate that the magnetic proximity effect can still be obtained in stacked heterostructures assembled via the dry transfer of exfoliated micrometer-sized thin flakes of van der Waals topological insulator and magnetic insulator materials (BiSbTeSe2/Cr2Ge2Te6), as evidenced in the observation of an anomalous Hall effect (AHE). Furthermore, devices made from these heterostructures can allow modulation of the AHE when controlling the carrier density via electrostatic gating. These results show that simple mechanical transfer of magnetic van der Waals materials provides another possible avenue to magnetize topological insulators by magnetic proximity effect, a key step towards further realization of novel topological phases such as QAHI and axion insulators. △ Less

Submitted 27 June, 2022; originally announced June 2022.

Comments: 22 pages, 10 figures

Atomic-scale origin of the low grain-boundary resistance in perovskite solid electrolytes

Authors: Tom Lee, Ji Qi, Chaitanya A. Gadre, Huaixun Huyan, Shu-Ting Ko, Yunxing Zuo, Chaojie Du, Jie Li, Toshihiro Aoki, Caden John Stippich, Ruqian Wu, Jian Luo, Shyue Ping Ong, Xiaoqing Pan

Abstract: Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance is a general bottleneck. In the most well studied perovskite OSE, Li3xLa2/3-xTiO3 (LLTO), the ionic conductivity of GBs is about three orders of magnitude lower than that of the bulk. In contrast, the related Li0.375Sr0.4375Ta0.75… ▽ More Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance is a general bottleneck. In the most well studied perovskite OSE, Li3xLa2/3-xTiO3 (LLTO), the ionic conductivity of GBs is about three orders of magnitude lower than that of the bulk. In contrast, the related Li0.375Sr0.4375Ta0.75Zr0.25O3 (LSTZ0.75) perovskite exhibits low GB resistance for reasons yet unknown. Here, we used aberration-corrected scanning transmission electron microscopy and spectroscopy, along with an active learning moment tensor potential, to reveal the atomic scale structure and composition of LSTZ0.75 GBs. Vibrational electron energy loss spectroscopy is applied for the first time to characterize the otherwise unmeasurable Li distribution in GBs of LSTZ0.75. We found that Li depletion, which is a major reason for the low GB ionic conductivity of LLTO, is absent for the GBs of LSTZ0.75. Instead, the low GB resistivity of LSTZ0.75 is attributed to the formation of a unique defective cubic perovskite interfacial structure that contained abundant vacancies. Our study provides insights into the atomic scale mechanisms of low GB resistivity and sheds light on possible paths for designing OSEs with high total ionic conductivity. △ Less

Submitted 31 March, 2022; originally announced April 2022.

Higher-order topological phases emerging from the Su-Schrieffer-Heeger stacking

Authors: Xun-Jiang Luo, Xiao-Hong Pan, Chao-Xing Liu, Xin Liu

Abstract: In this work, we develop a systematical approach of constructing and classifying the model Hamiltonians for two-dimensional (2D) higher-order topological phase with corner zero energy states (CZESs). Our approach is based on the direct construction of analytical solution of the CZESs in a series of 2D systems that stack the 1D extended Su-Schrieffer-Heeger (SSH) model, two copies of the original S… ▽ More In this work, we develop a systematical approach of constructing and classifying the model Hamiltonians for two-dimensional (2D) higher-order topological phase with corner zero energy states (CZESs). Our approach is based on the direct construction of analytical solution of the CZESs in a series of 2D systems that stack the 1D extended Su-Schrieffer-Heeger (SSH) model, two copies of the original SSH model, along two orthogonal directions. Fascinatingly, our approach not only gives the celebrated Benalcazar-Bernevig-Hughes and 2D SSH models but also reveals a novel model and we refer it to crossed 2D SSH model. Although these three models exhibit completely different bulk topology, we find that the CZESs can be universally characterized by edge winding number for 1D edge states, attributing to their unified Hamiltonian construction form and edge topology. Remarkably, our principle of obtaining CZESs can be readily generalized to arbitrary dimension and superconducting systems. Thus, our work sheds new light on the theoretical understanding of the higher-order topological phase and paves the way to looking for higher-order topological insulators and superconductors. △ Less

Submitted 28 February, 2022; originally announced February 2022.

Comments: 5 pages, 3 figures, 1 table, and supplementary material

Journal ref: Phys. Rev. B 107, 045118 (2023)

Electronic structure and spin-lattice relaxation in superconducting vortex states on the kagome lattice near van Hove filling

Authors: Hong-Min Jiang, Shun-Li Yu, Xiao-Yin Pan

Abstract: Starting from a tight-binding model on the kagome lattice near the van Hove filling, the superconducting (SC) properties are investigated self-consistently using the Bogoliubov-de Gennes equation with the consideration of the inequivalent third-neighbor (TN) bonds. Near the van Hove filling, the most favorable SC pairings are found to derive from the electrons belonging to the same sublattice site… ▽ More Starting from a tight-binding model on the kagome lattice near the van Hove filling, the superconducting (SC) properties are investigated self-consistently using the Bogoliubov-de Gennes equation with the consideration of the inequivalent third-neighbor (TN) bonds. Near the van Hove filling, the most favorable SC pairings are found to derive from the electrons belonging to the same sublattice sites, including the on-site $s$-wave and the spin-singlet/triplet TN pairings. The inequivalent TN bonds will result in multiple SC components with different orbital angular momentums (OAM) for the TN SC pairings. While the density of states (DOS) and the temperature ($T$) dependence of the spin-lattice relaxation rate ($T^{-1}_{1}$) exhibit distinct line shapes in the SC state for the three cases, a peak structure in the $T$ dependence of $T^{-1}_{1}$ can be found for both cases just below $T_{c}$ as a result of the van Hove singularity, even though the SC gap has nodes. The effects of magnetic vortices on the low energy excitations and on the $T$ dependence of $T^{-1}_{1}$ with the implications of the results are also discussed for both cases. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Comments: 9 pages, 4 figures, 2 tables

Journal ref: Phys. Rev. B 106, 014501 (2022)

Local breaking of the spin degeneracy in the vortex states of Ising superconductors: Induced antiphase ferromagnetic order

Authors: Hong-Min Jiang, Xiao-Yin Pan

Abstract: Ising spin-orbital coupling is usually easy to identify in the Ising superconductors via an in-plane critical field enhancement, but we show that the Ising spin-orbital coupling also manifests in the vortex physics for perpendicular magnetic fields. By self-consistently solving the Bogoliubov-de Gennes equations of a model Hamiltonian built on the honeycomb lattice with the Ising spin-orbital coup… ▽ More Ising spin-orbital coupling is usually easy to identify in the Ising superconductors via an in-plane critical field enhancement, but we show that the Ising spin-orbital coupling also manifests in the vortex physics for perpendicular magnetic fields. By self-consistently solving the Bogoliubov-de Gennes equations of a model Hamiltonian built on the honeycomb lattice with the Ising spin-orbital coupling pertinent to the transition metal dichalcogenides, we numerically investigate the local breaking of the spin and sublattice degeneracies in the presence of a perpendicular magnetic field. It is revealed that the ferromagnetic orders are induced inside the vortex core region by the Ising spin-orbital coupling. The induced magnetic orders are antiphase in terms of their opposite polarizations inside the two nearest-neighbor vortices with one of the two polarizations coming dominantly from one sublattice sites, implying the local breaking of the spin and sublattice degeneracies. The finite-energy peaks of the local-density-of-states for spin-up and spin-down in-gap states are split and shifted oppositely by the Ising spin-orbital coupling, and the relative shifts of them on sublattices $A$ and $B$ are also of opposite algebraic sign. The calculated results and the proposed scenario may not only serve as experimental signatures for identifying the Ising spin-orbital coupling in the Ising superconductors, but also be prospective in manipulation of electron spins in motion through the orbital effect in the superconducting vortex states. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: 9 pages, 5figures

Journal ref: Phys. Rev. B 105, 014510 (2022)

Engineering superconducting qubits to reduce quasiparticles and charge noise

Authors: Xianchuang Pan, Yuxuan Zhou, Haolan Yuan, Lifu Nie, Weiwei Wei, Libo Zhang, Jian Li, Song Liu, Zhi Hao Jiang, Gianluigi Catelani, Ling Hu, Fei Yan, Dapeng Yu

Abstract: Identifying, quantifying, and suppressing decoherence mechanisms in qubits are important steps towards the goal of engineering a quantum computer or simulator. Superconducting circuits offer flexibility in qubit design; however, their performance is adversely affected by quasiparticles (broken Cooper pairs). Developing a quasiparticle mitigation strategy compatible with scalable, high-coherence de… ▽ More Identifying, quantifying, and suppressing decoherence mechanisms in qubits are important steps towards the goal of engineering a quantum computer or simulator. Superconducting circuits offer flexibility in qubit design; however, their performance is adversely affected by quasiparticles (broken Cooper pairs). Developing a quasiparticle mitigation strategy compatible with scalable, high-coherence devices is therefore highly desirable. Here we experimentally demonstrate how to control quasiparticle generation by downsizing the qubit, capping it with a metallic cover, and equipping it with suitable quasiparticle traps. Using a flip-chip design, we shape the electromagnetic environment of the qubit above the superconducting gap, inhibiting quasiparticle poisoning. Our findings support the hypothesis that quasiparticle generation is dominated by the breaking of Cooper pairs at the junction, as a result of photon absorption by the antenna-like qubit structure. We achieve record low charge-parity switching rate (<1Hz). Our aluminium devices also display improved stability with respect to discrete charging events. △ Less

Submitted 26 December, 2022; v1 submitted 3 February, 2022; originally announced February 2022.

Journal ref: Nat. Commun. 13, 7196 (2022)

Disconnection-Mediated Twin/Twin-Junction Migration in FCC metals

Authors: Mingjie Xu, Kongtao Chen, Fan Cao, Leonardo Velasco Estrada, Thomas M. Kaufman, Fan Ye, Horst Hahn, Jian Han, David J. Srolovitz, Xiaoqing Pan

Abstract: We present the results of novel, time-resolved, in situ HRTEM observations, molecular dynamics (MD) simulations, and disconnection theory that elucidate the mechanism by which the motion of grain boundaries (GBs) in polycrystalline materials are coupled through disconnection motion/reactions at/adjacent to GB triple junctions (TJs). We focus on TJs composed of a pair of coherent twin boundaries (C… ▽ More We present the results of novel, time-resolved, in situ HRTEM observations, molecular dynamics (MD) simulations, and disconnection theory that elucidate the mechanism by which the motion of grain boundaries (GBs) in polycrystalline materials are coupled through disconnection motion/reactions at/adjacent to GB triple junctions (TJs). We focus on TJs composed of a pair of coherent twin boundaries (CTBs) and a Σ9 GB. As for all GBs, disconnection theory implies that multiple modes/local mechanisms for CTB migration are possible and that the mode selection is affected by the nature of the driving force for migration. While we observe (HRTEM and MD) CTB migration through the motion of pure steps driven by chemical potential jump, other experimental observations (and our simulations) show that stress-driven CTB migration occurs through the motion of disconnections with a non-zero Burgers vector; these are pure-step and twinning-partial CTB migration mechanisms. Our experimental observations and simulations demonstrate that the motion of a GB drags its delimiting TJ and may force the motion of the other GBs meeting at the TJ. Our experiments and simulations focus on two types of TJs composed of a pair of CTBs and a Σ9 GB; a 107° TJ readily migrates while a 70° TJ is immobile (experiment, simulation) in agreement with our disconnection theory even though the intrinsic mobilities of the constituent GBs do not depend on TJ-type. We also demonstrate that disconnections may be formed at TJs (chemical potential jump/stress driven) and at GB/free surface junctions (stress-driven). △ Less

Submitted 11 January, 2022; originally announced January 2022.

A non-perturbative study of the interplay between electron-phonon interaction and Coulomb interaction in undoped graphene

Authors: Zhao-Kun Yang, Xiao-Yin Pan, Guo-Zhu Liu

Abstract: In condensed-matter systems, electrons are subjected to two different interactions under certain conditions. Even if both interactions are weak, it is difficult to perform perturbative calculations due to the complexity caused by the interplay of two interactions. When one or two interactions are strong, ordinary perturbation theory may become invalid. Here we consider undoped graphene as an examp… ▽ More In condensed-matter systems, electrons are subjected to two different interactions under certain conditions. Even if both interactions are weak, it is difficult to perform perturbative calculations due to the complexity caused by the interplay of two interactions. When one or two interactions are strong, ordinary perturbation theory may become invalid. Here we consider undoped graphene as an example and provide a non-perturbative quantum-field-theoretic analysis of the interplay of electron-phonon interaction and Coulomb interaction. We treat these two interactions on an equal footing and derive the exact Dyson-Schwinger integral equation of the full Dirac-fermion propagator. This equation depends on several complicated correlation functions and thus is difficult to handle. Fortunately, we find that these correlation functions obey a number of exact identities, which allows us to prove that the Dyson-Schwinger equation of the full fermion propagator is self-closed. After solving this self-closed equation, we obtain the renormalized velocity of Dirac fermions and show that its energy (momentum) dependence is dominantly determined by the electron-phonon (Coulomb) interaction. In particular, the renormalized velocity exhibits a logarithmic momentum dependence and a non-monotonic energy dependence. △ Less

Submitted 7 November, 2022; v1 submitted 5 January, 2022; originally announced January 2022.

Comments: 32 pages, 5 figures

Journal ref: J. Phys.: Condens. Matter 35, 075601 (2022)

Photochemical Synthesis of P-S-H Ternary Hydride at High Pressures

Authors: Tingting Ye, Hong Zeng, Peng Cheng, Deyuan Yao, Xiaomei Pan, Xiao Zhang, Junfeng Ding

Abstract: The recent discovery of room temperature superconductivity (283 K) in carbonaceous sulfur hydride (C-S-H) has attracted lots of interests in ternary hydrogen rich materials. In this report, ternary hydride P-S-H has been synthesized through photochemical reaction from elemental sulfur (S), phosphorus (P) and molecular hydrogen (H2) at high pressures and room temperature. The Raman spectroscopy und… ▽ More The recent discovery of room temperature superconductivity (283 K) in carbonaceous sulfur hydride (C-S-H) has attracted lots of interests in ternary hydrogen rich materials. In this report, ternary hydride P-S-H has been synthesized through photochemical reaction from elemental sulfur (S), phosphorus (P) and molecular hydrogen (H2) at high pressures and room temperature. The Raman spectroscopy under pressure shows that H2S and PH3 compounds are synthesized after laser heating at 0.9 GPa and a ternary van der Waals compound P-S-H is synthesized with a further compression to 4.6 GPa. The P-S-H compound is probably a mixed alloy of PH3 and (H2S)2H2 with a guest-host structure similar to the C-S-H system. The ternary hydride can persist up to 35.6 GPa at least and shows two phase transitions at approximately 23.6 GPa and 32.8 GPa, respectively. The P-S-H ternary hydride in this report is a competitive candidate for new hydride superconductors with near room-temperature transitions. △ Less

Submitted 28 December, 2021; originally announced December 2021.

Fermion dispersion renormalization in a two-dimensional semi-Dirac semimetal

Authors: Hao-Fu Zhu, Xiao-Yin Pan, Guo-Zhu Liu

Abstract: We present a non-perturbative study of the quantum many-body effects caused by the long-range Coulomb interaction in a two-dimensional semi-Dirac semimetal. This kind of semimetal may be realized in deformed graphene and a class of other realistic materials. In the non-interacting limit, the dispersion of semi-Dirac fermion is linear in one direction and quadratic in the other direction. When the… ▽ More We present a non-perturbative study of the quantum many-body effects caused by the long-range Coulomb interaction in a two-dimensional semi-Dirac semimetal. This kind of semimetal may be realized in deformed graphene and a class of other realistic materials. In the non-interacting limit, the dispersion of semi-Dirac fermion is linear in one direction and quadratic in the other direction. When the impact of Coulomb interaction is taken into account, such a dispersion can be significantly modified. To reveal the correlation effects, we first obtain the exact self-consistent Dyson-Schwinger equation of the full fermion propagator and then extract the momentum dependence of the renormalized fermion dispersion from the numerical solutions. Our results show that the fermion dispersion becomes linear in two directions. These results are compared to previous theoretical works on semi-Dirac semimetals. △ Less

Submitted 24 February, 2022; v1 submitted 13 December, 2021; originally announced December 2021.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 105, 085136 (2022)

Braiding higher-order Majorana corner states through their spin degree of freedom

Authors: Xiao-Hong Pan, Xun-Jiang Luo, Jin-Hua Gao, Xin Liu

Abstract: In this work, we study the spin texture of a class of higher-order topological superconductors (HOTSC) and show how it can be used to detect and braid Majorana corner modes (MCMs). This class of HOTSC is composed of two-dimensional topological insulators with s-wave superconductivity and in-plane magnetic fields, which offers advantages in experimental implementation. The spin polarization of the… ▽ More In this work, we study the spin texture of a class of higher-order topological superconductors (HOTSC) and show how it can be used to detect and braid Majorana corner modes (MCMs). This class of HOTSC is composed of two-dimensional topological insulators with s-wave superconductivity and in-plane magnetic fields, which offers advantages in experimental implementation. The spin polarization of the MCMs in this class is perpendicular with the applied magnetic field direction and is opposite on intrinsic orbitals, resulting in an overall ferrimagnetic spin texture. As a result, we find that the spin-selective Andreev reflection can be observed in a transverse instead of parallel direction to the applied magnetic field. Meanwhile, this spin texture leads to the gate-tunable $4π$ periodic $φ_0$ Josephson current that performs qualitatively different behavior from the topologically trivial $φ_0$-junction under rotating the in-plane magnetic field. Meanwhile, the existence of the MCMs in this class does not depend on the in-plane magnetic field direction. This gives rise to great advantage in constructing all electronically controlled Majorana network for braiding, which is confirmed through our numerical simulation. We thus provide a comprehensive scheme for probing non-Abelian statistics in this class of HOTSCs. △ Less

Submitted 24 November, 2021; originally announced November 2021.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 105, 195106 (2022)

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

Authors: J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. Gao, T. Tybell, V. Gopalan, X. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom

Abstract: The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry… ▽ More The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Emergence of near-boundary segregation zones in face-centered cubic multi-principal element alloys

Authors: Megan J. McCarthy, Hui Zheng, Diran Apelian, William J. Bowman, Horst Hahn, Jian Luo, Shyue Ping Ong, Xiaoqing Pan, Timothy J. Rupert

Abstract: Grain boundaries have been shown to dramatically influence the behavior of relatively simple materials such as monatomic metals and binary alloys. The increased chemical complexity associated with multi-principal element alloys is hypothesized to lead to new grain boundary phenomena. To explore the relationship between grain boundary structure and chemistry in these materials, hybrid molecular dyn… ▽ More Grain boundaries have been shown to dramatically influence the behavior of relatively simple materials such as monatomic metals and binary alloys. The increased chemical complexity associated with multi-principal element alloys is hypothesized to lead to new grain boundary phenomena. To explore the relationship between grain boundary structure and chemistry in these materials, hybrid molecular dynamics/Monte Carlo simulations of a faceted Σ11 <110> tilt boundary, chosen to sample both high- and low-energy boundary configurations, are performed in face-centered cubic CrFeCoNiCu and CrFeCoNi equiatomic alloys. Unexpected enrichment of Fe is discovered in the face-centered cubic regions adjacent to the interface and found to be correlated with a structurally-distinct region of reduced atomic volume. Comparison with the boundary of the same type in monatomic Cu demonstrates that altered near-boundary regions exist in simpler systems as well, with the chemical complexity of the multi-principal element alloys highlighting its existence and importance. △ Less

Submitted 10 October, 2021; v1 submitted 17 June, 2021; originally announced June 2021.

Experimental Observation of Localized Interfacial Phonon Modes

Authors: Zhe Cheng, Ruiyang Li, Xingxu Yan, Glenn Jernigan, Jingjing Shi, Michael E. Liao, Nicholas J. Hines, Chaitanya A. Gadre, Juan Carlos Idrobo, Eungkyu Lee, Karl D. Hobart, Mark S. Goorsky, Xiaoqing Pan, Tengfei Luo, Samuel Graham

Abstract: Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the exist… ▽ More Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion. △ Less

Submitted 29 May, 2021; originally announced May 2021.

Journal ref: Nature Communications, 12, 6901, 2021

Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface

Authors: Xuezeng Tian, Xingxu Yan, Georgios Varnavides, Yakun Yuan, Dennis S. Kim, Christopher J. Ciccarino, Polina Anikeeva, Ming-Yang Li, Lain-Jong Li, Prineha Narang, Xiaoqing Pan, Jianwei Miao

Abstract: The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with… ▽ More The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will open the door to correlate structure-property relationships of a wide range of heterostructure interfaces at the single-atom level. △ Less

Submitted 18 April, 2021; originally announced April 2021.

Journal ref: Sci. Adv. 7, eabi6699 (2021)

Quadrupling the stored charge by extending the accessible density of states

Authors: Mengyu Yan, Peiyao Wang, Xuelei Pan, Qiulong Wei, Jefferson Z. Liu, Yunlong Zhao, Kangning Zhao, Bruce Dunn, Jun Liu, Jihui Yang, Liqiang Mai

Abstract: Nanosized energy storage, energy-harvesting, and functional devices are the three key components for integrated self-power systems. Here, we report on nanoscale electrochemical devices with a nearly three-fold enhanced stored charge under the field effect. We demonstrated the field-effect transistor can not only work as a functional component in nanodevices but also serve as an amplifier for the n… ▽ More Nanosized energy storage, energy-harvesting, and functional devices are the three key components for integrated self-power systems. Here, we report on nanoscale electrochemical devices with a nearly three-fold enhanced stored charge under the field effect. We demonstrated the field-effect transistor can not only work as a functional component in nanodevices but also serve as an amplifier for the nanosized energy storage blocks. This unusual increase in energy storage is attributed to having a wide range of accessible electronic density of states (EDOS), hence redox reactions are occurring within the nanowire and not being confined to the surface. Initial results with MoS2 suggest that this field effect modulated energy storage mechanism may also apply to many other redox-active materials. Our work demonstrates the novel application of the field-effect in energy storage devices as a universal strategy to improve ion diffusion and the surface-active ion concentration of the active material, which can greatly enhance the charge storage ability of nanoscale devices. The fabrication process of the field-effect energy storage device is also compatible with microtechnology and can be integrated into other microdevices and nanodevices. △ Less

Submitted 7 March, 2021; originally announced March 2021.

Comments: 18 pages, 4 figures

Higher-order topological superconductors based on weak topological insulators

Authors: Xun-Jiang Luo, Xiao-Hong Pan, Xin Liu

Abstract: High-order topological phases host robust boundary states at the boundary of the boundary, which can be interpreted from their boundary topology. In this work, considering the interplay between superconductors and magnetic fields to gap the surface states of three-dimensional weak topological insulators, we show that second-order topological superconductors (TSCs) featuring helical or chiral Major… ▽ More High-order topological phases host robust boundary states at the boundary of the boundary, which can be interpreted from their boundary topology. In this work, considering the interplay between superconductors and magnetic fields to gap the surface states of three-dimensional weak topological insulators, we show that second-order topological superconductors (TSCs) featuring helical or chiral Majorana hinge modes and third-order TSC featuring Majorana corner modes can be realized. Remarkably, the higher-order TSCs in our models can be attributed to their certain boundaries, surfaces, or hinges, which naturally behave as first-order TSC in DIII or D symmetry class. Correspondingly, these higher-order TSCs can be characterized by the boundary first-order topological invariants, such as surface Chern numbers or surface $Z_2$ topological invariants for surface TSCs. Our models can effectively capture the topology of iron-based superconductors with desired inverted band structures and superconducting pairings. △ Less

Submitted 2 March, 2021; originally announced March 2021.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 104, 104510 (2021)

Prediction of Stable Ground-State Binary Sodium-Potassium Interalkalis under High Pressures

Authors: Yangmei Chen, Xiaozhen Yan, Huayun Geng, Xiaowei Sheng, Leilei Zhang, Hao Wang, Jinglong Li, Ye Cao, Xiaolong Pan

Abstract: The complex structures and electronic properties of alkali metals and their alloys provide a natural laboratory for studying the interelectronic interactions of metals under compression. A recent theoretical study (J. Phys. Chem. Lett. 2019, 10, 3006) predicted an interesting pressure-induced decomposition-recombination behavior of the Na2K compound over a pressure range of 10 - 500 GPa. However,… ▽ More The complex structures and electronic properties of alkali metals and their alloys provide a natural laboratory for studying the interelectronic interactions of metals under compression. A recent theoretical study (J. Phys. Chem. Lett. 2019, 10, 3006) predicted an interesting pressure-induced decomposition-recombination behavior of the Na2K compound over a pressure range of 10 - 500 GPa. However, a subsequent experiment (Phys. Rev. B 2020, 101, 224108) reported the formation of NaK rather than Na2K at pressures above 5.9 GPa. To address this discordance, we study the chemical stability of different stoichiometries of NaxK (x = 1/4, 1/3, 1/2, 2/3, 3/4, 4/3, 3/2 and 1 - 4) by effective structure searching method combined with first-principles calculations. Na2K is calculated to be unstable at 5 - 35 GPa due to the decomposition reaction Na2K-> NaK + Na, coinciding well with the experiment. NaK undergoes a combination-decomposition-recombination process accompanied by an opposite charge-transfer behavior between Na and K with pressure. Besides NaK, two hitherto unknown compounds NaK3 and Na3K2 are uncovered. NaK3 is a typical metallic alloy, while Na3K2 is an electride with strong interstitial electron localization. △ Less

Submitted 9 January, 2021; originally announced January 2021.

Comments: 19 pages, 4 figures, with supporting information

Journal ref: Inorg. Chem. 60(1), 124-129 (2021)

Imaging real-time amorphization of hybrid perovskite solar cells under electrical biasing

Authors: Min-cheol Kim, Namyoung Ahn, Diyi Cheng, Mingjie Xu, Xiaoqing Pan, Suk Jun Kim, Yanqi Luo, David P. Fenning, Darren H. S. Tan, Minghao Zhang, So-Yeon Ham, Kiwan Jeong, Mansoo Choi, Ying Shirley Meng

Abstract: Perovskite solar cells have drawn much attention in recent years, owing to its world-record setting photovoltaic performances. Despite its promising use in tandem applications and flexible devices, its practicality is still limited by its structural instability often arising from ion migration and defect formation. While it is generally understood that ion instability is a primary cause for degrad… ▽ More Perovskite solar cells have drawn much attention in recent years, owing to its world-record setting photovoltaic performances. Despite its promising use in tandem applications and flexible devices, its practicality is still limited by its structural instability often arising from ion migration and defect formation. While it is generally understood that ion instability is a primary cause for degradation, there is still a lack of direct evidence of structural transformation at the atomistic scale. Such an understanding is crucial to evaluate and pin-point how such instabilities are induced relative to external perturbations such as illumination or electrical bias with time, allowing researchers to devise effective strategies to mitigate them. Here, we designed an in-situ TEM setup to enable real-time observation of amorphization in double cation mixed perovskite materials under electrical biasing at 1 V. It is found that amorphization occurs along the (001) and (002) planes, which represents the observation of in-situ facet-dependent amorphization of a perovskite crystal. To reverse the degradation, the samples were heated at 50 oC and was found to recrystallize, effectively regaining its performance losses. This work is vital toward understanding fundamental ion-migration phenomena and address instability challenges of perovskite optoelectronics. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation

Authors: Faji Xie, Zhen Lian, Shuai Zhang, Tianmeng Wang, Shengnan Miao, Zhiyong Song, Zhe Ying, Xing-Chen Pan, Mingsheng Long, Minhao Zhang, Fucong Fei, Weida Hu, Geliang Yu, Fengqi Song, Ting-Ting Kang, Su-Fei Shi

Abstract: Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobili… ▽ More Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S. The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Authors: Songhua Cai, Yingzhuo Lun, Dianxiang Ji, Lu Han, Changqing Guo, Yipeng Zang, Si Gao, Yifan Wei, Min Gu, Chunchen Zhang, Zhengbin Gu, Xueyun Wang, Christopher Addiego, Daining Fang, Yuefeng Nie, Jiawang Hong, Peng Wang, Xiaoqing Pan

Abstract: Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial rever… ▽ More Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems. △ Less

Submitted 7 September, 2020; originally announced September 2020.

Comments: 19 pages, 4 figures

Two superconducting components with different symmetries in Nd1-xSrxNiO2 films

Authors: Qiangqiang Gu, Yueying Li, Siyuan Wan, Huazhou Li, Wei Guo, Huan Yang, Qing Li, Xiyu Zhu, Xiaoqing Pan, Yuefeng Nie, Hai-Hu Wen

Abstract: The pairing mechanism in cuprates remains as one of the most challenging issues in the field of condensed matter physics. The unique 3d9 electron orbital of the Cu2+ ionic states in cuprates is supposed to be the major player for the occurrence of superconductivity. Recently, superconductivity at about 9-15 K was discovered in infinite layer thin films of nickelate Nd1-xSrxNiO2 (x=0.1-0.2) which i… ▽ More The pairing mechanism in cuprates remains as one of the most challenging issues in the field of condensed matter physics. The unique 3d9 electron orbital of the Cu2+ ionic states in cuprates is supposed to be the major player for the occurrence of superconductivity. Recently, superconductivity at about 9-15 K was discovered in infinite layer thin films of nickelate Nd1-xSrxNiO2 (x=0.1-0.2) which is believed to have the similar 3d9 orbital electrons. The key issue concerned here is about the superconducting gap function. Here we report the first set data of single particle tunneling measurements on the superconducting nickelate thin films. We find predominantly two types of tunneling spectra, one shows a V-shape feature which can be fitted very well by a d-wave gap function with gap maximum of about 3.9 meV, another one exhibits a full gap of about 2.35 meV. Some spectra demonstrate mixed contributions of these two components. Our results suggest that the newly found Ni-based superconductors play as close analogs to cuprates, and thus demonstrate the commonality of unconventional superconductivity. △ Less

Submitted 23 June, 2020; originally announced June 2020.

Comments: 24 pages, 4 figures in Main Text and 7 figures in Supplementary Information

Journal ref: Nature Communications 11, 6027 (2020)