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Spontaneous spin superconductor state in ABCA-stacked tetralayer graphene
Authors:
Shuai Li,
Yuan-Hang Ren,
Ao-Long Li,
Hua Jiang
Abstract:
We theoretically demonstrate a spontaneous spin superconductor (SC) state in ABCA-stacked tetralayer graphene, under sequential effects of electron-electron (e-e) and electron-hole (e-h) interactions. First of all, we examine the ferromagnetic (FM) exchange instability and phase diagram of the system induced by the long-range e-e interaction. At non- or low-doping levels, the interaction trends to…
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We theoretically demonstrate a spontaneous spin superconductor (SC) state in ABCA-stacked tetralayer graphene, under sequential effects of electron-electron (e-e) and electron-hole (e-h) interactions. First of all, we examine the ferromagnetic (FM) exchange instability and phase diagram of the system induced by the long-range e-e interaction. At non- or low-doping levels, the interaction trends to stabilize a FM phase with the coexisting electron and hole carriers. Superior to bilayer and trilayer systems, tetralayer graphene has a larger FM phase region and spin splitting, making it more advantageous to realize the spin SC state. Subsequently, we prove that the FM phase becomes unstable when attractive e-h interaction is considered. As a consequence, the spin SC state can be spontaneously formed at low temperature, where spin-triplet exciton pairs act as the equivalent of Cooper pairs. We further develop a consistent BCS-type theory for the spin SC state in ABCA-stacked graphene. The predicted spin superconducting gap can reach about $7.0$ meV, with a critical temperature of about 45 K for non-doping system. At last, we demonstrated a spin-current Josephson effect in the ABCA-stacked graphene spin SC heterojunction. Our findings enrich the prospective spin SC candidate materials, illuminating more possibilities for achieving non-dissipative super-spintronics.
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Submitted 29 July, 2024;
originally announced July 2024.
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Detection of Electron Paramagnetic Resonance of Two Electron Spins Using a Single NV Center in Diamond
Authors:
Yuhang Ren,
Susumu Takahashi
Abstract:
An interacting spin system is a great testbed for fundamental quantum physics and applications in quantum sensing and quantum simulation. For these investigations, detailed information of the interactions, e.g. the number of spins and their interaction strengths, is often required. In this study, we present the identification and characterization of a single nitrogen-vacancy (NV) center coupled to…
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An interacting spin system is a great testbed for fundamental quantum physics and applications in quantum sensing and quantum simulation. For these investigations, detailed information of the interactions, e.g. the number of spins and their interaction strengths, is often required. In this study, we present the identification and characterization of a single nitrogen-vacancy (NV) center coupled to two electron spins. In the experiment, we first identify a well isolated single NV center, and characterize its spin decoherence time. Then we perform NV-detected electron paramagnetic resonance (EPR) spectroscopy to detect surrounding electron spins. From the analysis of the NV-EPR signal, we determine the number of detected spins and their interaction strengths precisely. Moreover, the spectral analysis indicates candidates of the detected spins to be diamond surface spins. This study demonstrates a promising approach for the identification and characterization of an interacting spin system for realizing entangled sensing, using the electron spin as quantum reporters.
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Submitted 29 July, 2024;
originally announced July 2024.
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Theory of electric polarization induced by magnon transport in two-dimensional honeycomb antiferromagnets
Authors:
D. Quang To,
Federico Garcia-Gaitan,
Yafei Ren,
Joshua M. O. Zide,
John Q. Xiao,
Branislav K. Nikolić,
Garnett W. Bryant,
Matthew F. Doty
Abstract:
We introduce a quantum mechanical formalism for computing the electric polarization arising in two-dimensional (2D) antiferromagnets (AFMs) as a result of {\bf both} spin and orbital transport effect of magnons. We first show that an applied temperature gradient in a 2D collinear honeycomb AFM gives rise to accumulations of magnons having both orbital moment and spin moment at the edges of the 2D…
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We introduce a quantum mechanical formalism for computing the electric polarization arising in two-dimensional (2D) antiferromagnets (AFMs) as a result of {\bf both} spin and orbital transport effect of magnons. We first show that an applied temperature gradient in a 2D collinear honeycomb AFM gives rise to accumulations of magnons having both orbital moment and spin moment at the edges of the 2D AFM as the manifestation of the magnon Nernst effects. We then use our formalism to show that such magnon Nernst effects, in the presence of the Dzyaloshinskii-Moriya Interaction (DMI), induce electric polarization that can be measured experimentally. Finally, we demonstrate the value of this formalism by using it to predict the properties of two 2D honeycomb AFMs, one each with Néel and zigzag order. These results integrate advances in magnonics, spinorbitronics, and orbitronics to create a unified framework that can be used to understand and control the manipulation of magnetic states in 2D AFMs through the magnon spin and orbital degrees of freedom.
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Submitted 22 July, 2024;
originally announced July 2024.
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Cluster Sliding Ferroelectricity in Trilayer Quasi-Hexagonal C60
Authors:
Xuefei Wang,
Yanhan Ren,
Shi Qiu,
Fan Zhang,
Xueao Li,
Junfeng Gao,
Weiwei Gao,
Jijun Zhao
Abstract:
Electric polarization typically originates from non-centrosymmetric charge distributions. Since chemical bonds between atoms of the same elements favor centrosymmetric crystal structures and symmetrically distributed electron charges, elemental ferroelectrics are extremely rare. In comparison to atoms, elemental clusters are less symmetric and typically have various preferred orientations in cryst…
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Electric polarization typically originates from non-centrosymmetric charge distributions. Since chemical bonds between atoms of the same elements favor centrosymmetric crystal structures and symmetrically distributed electron charges, elemental ferroelectrics are extremely rare. In comparison to atoms, elemental clusters are less symmetric and typically have various preferred orientations in crystals. Consequently, the assembly of clusters with different orientations tends to break the inversion symmetry. Based on this concept, we show that sliding ferroelectricity naturally emerges in trilayer quasi-hexagonal phase (qHP) C60, a cluster-assembled carbon allotrope recently synthesized. Trilayer qHP C60's have several stable polar structures, which are distinguishable in second-harmonic generation (SHG) responses. Compared to previously found elemental ferroelectrics, trilayer qHP C60's have sizable band gaps and some of them have both switchable out-of-plane and in-plane polarizations. Remarkably, the out-of-plane and in-plane polarizations are decoupled, enabling an easy-to-implement construction of Van der Waals homostructures with ferroelectrically switchable chirality.
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Submitted 18 July, 2024;
originally announced July 2024.
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Nonreciprocal phonons in PT-symmetric antiferromagnet
Authors:
Yafei Ren,
Daniyar Saparov,
Qian Niu
Abstract:
Phonon nonreciprocity, indicating different transport properties along opposite directions, has been observed in experiments under a magnetic field. We show that nonreciprocal acoustic phonons can also exist without a magnetic field nor net magnetization. We focus on PT symmetric antiferromagnets that break both time-reversal T and inversion symmetry P. We identify crucial contributions in phenome…
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Phonon nonreciprocity, indicating different transport properties along opposite directions, has been observed in experiments under a magnetic field. We show that nonreciprocal acoustic phonons can also exist without a magnetic field nor net magnetization. We focus on PT symmetric antiferromagnets that break both time-reversal T and inversion symmetry P. We identify crucial contributions in phenomenological elastic theory, dubbed flexo-viscosity and flexo-torque, that induce phonon nonreciprocity without changing the phonon polarization. The microscopic origin of these contributions is the molecular Berry curvature, manifested as emergent nonlocal magnetic fields on phonons. The symmetry breaking originated from spin order is transferred to the phonon system through spin-orbit coupling, where the orbital degree of freedom affects the lattice dynamics directly. By electrically modifying the spin-orbit coupling, we show that both the phonon nonreciprocity and helicity can be controlled and enhanced. Importantly, the phonon nonreciprocity is an odd function of the Néel vector, serving as an indicator of the order parameter.
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Submitted 12 July, 2024;
originally announced July 2024.
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Stable room-temperature multiferroic skyrmions in lithium niobate with enhanced Pockels effect
Authors:
Yalong Yu,
Bo Xiong,
Siqi Wu,
Yekai Ren,
Nuo Chen,
Qingjiao Mi,
Kangping Lou,
Rui Wang,
Tao Chu
Abstract:
Lithium Niobate (LN) is a ferroelectric material with exceptional electrical characteristics, including high piezoelectricity, high Pockels effect, etc. These properties make it a promising platform for numerous fields such as high-speed communication, optical computation, and quantum information processing. Besides these, the introduction of magnetic structures to LN holds significant potential t…
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Lithium Niobate (LN) is a ferroelectric material with exceptional electrical characteristics, including high piezoelectricity, high Pockels effect, etc. These properties make it a promising platform for numerous fields such as high-speed communication, optical computation, and quantum information processing. Besides these, the introduction of magnetic structures to LN holds significant potential to achieve magnetoelectric coupling, which can be applied in magnetic memory and data-processing devices with high efficiency. Here, for the first time, we observe a special topological magnetic structure called magnetic skyrmion in LN (SK-LN) by the combination of magnetic field annealing and rapid annealing processes . Compared to the magnetic skyrmions reported in magnetic systems, SK-LN exhibit exceptionally high stability. Additionally, the center of the magnetic vortex exhibits spontaneous ferroelectric polarization, indicating its multiferroic characteristic. With the excitation of these multiferroic skyrmions, the modulation efficiency of the electro-optical (EO) modulator fabricated on thin film lithium niobate on insulator (LNOI) wafer was found to be enhanced from 1.98 V*cm to 0.63 V*cm. It is considered that the multiferroic skyrmions significantly enhance the Pockels coefficient of LN to 101 pm/V, nearly three times the result (32pm/V) reported previously.
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Submitted 7 July, 2024;
originally announced July 2024.
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Engineering second-order topological insulators via coupling two first-order topological insulators
Authors:
Lizhou Liu,
Jiaqi An,
Yafei Ren,
Yingtao Zhang,
Zhenhua Qiao,
Qian Niu
Abstract:
We theoretically investigate the engineering of two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators. We find that the interlayer coupling between two topological insulators with opposite topological invariants results in the formation of edge-state gaps, which are essential for the emergence of the corner states. Using the effec…
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We theoretically investigate the engineering of two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators. We find that the interlayer coupling between two topological insulators with opposite topological invariants results in the formation of edge-state gaps, which are essential for the emergence of the corner states. Using the effective Hamiltonian framework, We elucidate that the formation of topological corner states requires either the preservation of symmetry in the crystal system or effective mass countersigns for neighboring edge states. Our proposed strategy for inducing corner state through interlayer coupling is versatile and applicable to both $\mathbb{Z}_2$ topological insulators and quantum anomalous Hall effects. We demonstrate this approach using several representative models including the seminal Kane-Mele model, the Bernevig-Hughes-Zhang model, and the Rashba graphene model to explicitly exhibit the formation of corner states via interlater coupling. Moreover, we also observe that the stacking of the coupled $\mathbb{Z}_2$ topological insulating systems results in the formation of the time-reversal invariant three-dimensional second-order nodal ring semimetals. Remarkably, the three-dimensional system from the stacking of the Bernevig-Hughes-Zhang model can be transformed into second-order Dirac semimetals, characterized by one-dimensional hinge Fermi arcs. Our strategy of engineering second-order topological phases via simple interlayer coupling promises to advance the exploration of higher-order topological insulators in two-dimensional spinful systems.
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Submitted 3 June, 2024;
originally announced June 2024.
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Realization of 2/3-layer transition metal dichalcogenides
Authors:
Ya-Xin Zhao,
Zi-Yi Han,
Ya-Ning Ren,
Ruo-Han Zhang,
Xiao-Feng Zhou,
Yu Zhang,
Lin He
Abstract:
Layered van der Waals transition metal dichalcogenides (TMDCs), generally composed of three atomic X-M-X planes in each layer (M = transition metal, X = chalcogen), provide versatile platforms for exploring diverse quantum phenomena. In each MX2 layer, the M-X bonds are predominantly covalent in nature, as a result, the cleavage of TMDC crystals always occurring between the layers. Here we report…
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Layered van der Waals transition metal dichalcogenides (TMDCs), generally composed of three atomic X-M-X planes in each layer (M = transition metal, X = chalcogen), provide versatile platforms for exploring diverse quantum phenomena. In each MX2 layer, the M-X bonds are predominantly covalent in nature, as a result, the cleavage of TMDC crystals always occurring between the layers. Here we report the controllable realization of fractional-layer WTe2 via an in-situ scanning tunnelling microscopy (STM) tip manipulation technique. By applying STM tip pulses, hundreds of the topmost Te atoms are removed to form a nanoscale monolayer Te pit in the 1T'-WTe2, thus realizing a brand-new 2/3-layer WTe2. Such a unique configuration undergoes a spontaneous atomic reconstruction, yielding an energy-dependent unidirectional charge-density-wave state with the wavevector and geometry quite distinct from that of pristine 1T'-WTe2. Our results expand the conventional understanding of the TMDCs and are expected to stimulate the research on extraordinary structures and properties based on fractional-layer TMDCs.
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Submitted 26 May, 2024;
originally announced May 2024.
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Interlayer Coupling Induced Topological Phase Transition to Higher Order
Authors:
Lizhou Liu,
Jiaqi An,
Yafei Ren,
Yingtao Zhang,
Zhenhua Qiao,
Qian Niu
Abstract:
We theoretically find that the second-order topological insulator, i.e., corner states, can be engineered by coupling two copies of two-dimensional $\mathbb{Z}_2$ topological insulators with opposite spin-helicities. As concrete examples, we utilize Kane-Mele models (i.e., graphene with intrinsic spin-orbit coupling) to realize the corner states by setting the respective graphenes to be…
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We theoretically find that the second-order topological insulator, i.e., corner states, can be engineered by coupling two copies of two-dimensional $\mathbb{Z}_2$ topological insulators with opposite spin-helicities. As concrete examples, we utilize Kane-Mele models (i.e., graphene with intrinsic spin-orbit coupling) to realize the corner states by setting the respective graphenes to be $\mathbb{Z}_2$ topological insulators with opposite intrinsic spin-orbit couplings. To exhibit its universality, we generalize our findings to other representative $\mathbb{Z}_2$ topological insulators, e.g., the Bernevig-Hughes-Zhang model. An effective model is presented to reveal the physical origin of corner states. We further show that the corner states can also be designed in other topological systems, e.g., by coupling quantum anomalous Hall systems with opposite Chern numbers. Our work suggests that interlayer coupling can be treated as a simple and efficient strategy to drive lower-order topological insulators to the higher-order ones.
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Submitted 18 May, 2024;
originally announced May 2024.
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On-liquid-gallium surface synthesis of ultra-smooth conductive metal-organic framework thin films
Authors:
Jinxin Liu,
Yunxu Chen,
Xing Huang,
Yanhan Ren,
Mike Hambsch,
David Bodesheim,
Darius Pohl,
Xiaodong Li,
Marielle Deconinck,
Bowen Zhang,
Markus Löffler,
Zhongquan Liao,
Fengxiang Zhao,
Arezoo Dianat,
Gianaurelio Cuniberti,
Yana Vaynzof,
Junfeng Gao,
Jingcheng Hao,
Stefan C. B. Mannsfeld,
Xinliang Feng,
Renhao Dong
Abstract:
Conductive metal-organic frameworks (MOFs) are emerging electroactive materials for (opto-)electronics. However, it remains a great challenge to achieve reliable MOF-based devices via the existing synthesis methods that are compatible with the complementary metal-oxide-semiconductor technology, as the surface roughness of thus-far synthetic MOF films or pellets is rather high for efficient electro…
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Conductive metal-organic frameworks (MOFs) are emerging electroactive materials for (opto-)electronics. However, it remains a great challenge to achieve reliable MOF-based devices via the existing synthesis methods that are compatible with the complementary metal-oxide-semiconductor technology, as the surface roughness of thus-far synthetic MOF films or pellets is rather high for efficient electrode contact. Here, we develop an on-liquid-gallium surface synthesis (OLGSS) strategy under chemical vapor deposition (CVD) conditions for the controlled growth of two-dimensional conjugated MOF (2D c-MOF) thin films with ten-fold improvement of surface flatness (surface roughness can reach as low as ~2 Å) compared with MOF films grown by the traditional methods. Supported by theoretical modeling, we unveil a layer-by-layer CVD growth mode for constructing flattening surfaces, that is triggered by the high adhesion energy between gallium (Ga) and planar aromatic ligands. We further demonstrate the generality of the as-proposed OLGSS strategy by reproducing such a flat surface over nine different 2D c-MOF films with variable thicknesses (~2 to 208 nm) and large lateral sizes (over 1 cm2). The resultant ultra-smooth 2D c-MOF films enable the formation of high-quality electrical contacts with gold (Au) electrodes, leading to a reduction of contact resistance by over ten orders of magnitude compared to the traditional uneven MOF films. Furthermore, due to the efficient interfacial interaction benifited from the high-quality contacts, the prepared van der Waals heterostructure (vdWH) of OLGSS c-MOF and MoS2 exhibits intriguing photoluminescence (PL) enhancement, PL peak shift and large work function modulation. The establishment of the reliable OLGSS method provides the chances to push the development of MOF electronics and the construction of multicomponent MOF-based heterostructure materials.
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Submitted 17 April, 2024;
originally announced April 2024.
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Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets
Authors:
Wenhao Liang,
Jiaqi An,
Zeyu Li,
Yafei Ren,
Zhenhua Qiao,
Qian Niu
Abstract:
We propose to realize quantum anomalous Hall effect (QAHE) in two-dimensional antiferromagnetic topological insulators. We consider antiferromagnetic MnBi$_2$Te$_4$ as a concrete example. In contrast to the even-layer A-type antiferromagnetic MnBi$_2$Te$_4$ that has zero Chern number due to the combined parity-time ($\mathcal{PT}$) symmetry, the system can host a nonzero Chern number by breaking t…
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We propose to realize quantum anomalous Hall effect (QAHE) in two-dimensional antiferromagnetic topological insulators. We consider antiferromagnetic MnBi$_2$Te$_4$ as a concrete example. In contrast to the even-layer A-type antiferromagnetic MnBi$_2$Te$_4$ that has zero Chern number due to the combined parity-time ($\mathcal{PT}$) symmetry, the system can host a nonzero Chern number by breaking this symmetry. We show that by controlling the antiferromagnetic spin configuration, for example, down/up/up/down, to break $\mathcal{PT}$ symmetry, tetralayer antiferromagnetic MnBi$_2$Te$_4$ can realize QAHE with Chern number $\mathcal{C}=-1$. Such spin configuration can be stablized by pinning the spin orientations on top and bottom layers. Furthermore, we reveal that the edge states are layer-selective and primarily locate at the boundaries of the bottom and top layers. In addition, via tuning the on-site orbital energy which determines the inverted band gap, we find tunable Chern number from $\mathcal{C}=-1$ to $\mathcal{C}=2$ and then to $\mathcal{C}=-1$. Our work not only proposes a scheme to realize Chern number tunable QAHE in antiferromagnets without net spin magnetization, but also provide a platform for layer-selective dissipationless transport devices.
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Submitted 20 April, 2024;
originally announced April 2024.
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Skyrmion-mechanical hybrid quantum systems: Manipulation of skyrmion qubits via phonons
Authors:
Xue-Feng Pan,
Xin-Lei Hei,
Xiao-Yu Yao,
Jia-Qiang Chen,
Yu-Meng Ren,
Xing-Liang Dong,
Yi-Fan Qiao,
Peng-Bo Li
Abstract:
Skyrmion qubits are a new highly promising logic element for quantum information processing. However, their scalability to multiple interacting qubits remains challenging. We propose a hybrid quantum setup with skyrmion qubits strongly coupled to nanomechanical cantilevers via magnetic coupling, which harnesses phonons as quantum interfaces for the manipulation of distant skyrmion qubits. A linear…
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Skyrmion qubits are a new highly promising logic element for quantum information processing. However, their scalability to multiple interacting qubits remains challenging. We propose a hybrid quantum setup with skyrmion qubits strongly coupled to nanomechanical cantilevers via magnetic coupling, which harnesses phonons as quantum interfaces for the manipulation of distant skyrmion qubits. A linear drive is utilized to achieve the modulation of the stiffness coefficient of the cantilever, resulting in an exponential enhancement of the coupling strength between the skyrmion qubit and the mechanical mode. We also consider the case of a topological resonator array, which allows us to study interactions between skyrmion qubits and topological phonon band structure, as well as chiral skyrmion-skyrmion interactions. The scheme suggested here offers a fascinating platform for investigating quantum information processing and quantum simulation with magnetic microstructures.
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Submitted 14 April, 2024;
originally announced April 2024.
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Visualizing orbital angular momentum induced single wavefront dislocation in graphene
Authors:
Yi-Wen Liu,
Yu-Chen Zhuang,
Ya-Ning Ren,
Chao Yan,
Xiao-Feng Zhou,
Qian Yang,
Qing-Feng Sun,
Lin He
Abstract:
Phase singularities are phase-indeterminate points where wave amplitudes are zero, which manifest as phase vertices or wavefront dislocations. In the realm of optical and electron beams, the phase singularity has been extensively explored, demonstrating a profound connection to orbital angular momentum. Direct local imaging of the impact of orbital angular momentum on phase singularities at the na…
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Phase singularities are phase-indeterminate points where wave amplitudes are zero, which manifest as phase vertices or wavefront dislocations. In the realm of optical and electron beams, the phase singularity has been extensively explored, demonstrating a profound connection to orbital angular momentum. Direct local imaging of the impact of orbital angular momentum on phase singularities at the nanoscale, however, remains a challenge and has yet to be achieved. Here, we study the role of orbital angular momentum in phase singularities in graphene, particularly at the atomic level, through scanning tunneling microscopy and spectroscopy. Our experiments demonstrate that the scatterings between different orbital angular momentum states, which are induced by local rotational symmetry-breaking potentials, can generate additional phase singularity, and result in robust single wavefront dislocation in real space. Our results pave the way for exploring the effects of orbital degree of freedom on quantum phases in quasiparticle interference processes.
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Submitted 28 March, 2024;
originally announced March 2024.
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Unraveling the nature of quasi van der Waals Epitaxy of magnetic topological insulators Cr: (BixSb1-x)2Te3 on a GaAs (111) substrate through coherently strained interface
Authors:
Yuxing Ren,
Lixuan Tai,
Kaicheng Pan,
Yueyun Chen,
Benjamin Z. Gregory,
Jin Ho Kang,
Malcolm Jackson,
Michael Liao,
Yifei Sun,
Noah Bodzin,
Kin Wong,
Suchismita Sarker,
B. C. Regan,
Chee-Wei Wong,
Mark Goorsky,
Andrej Singer,
Kang L. Wang
Abstract:
Quasi van der Waals Epitaxy (qvdWE) has been realized for decades at the interfaces between 3D and 2D materials or van der Waals materials. The growth of magnetic topological insulators (MTI) Cr: (BixSb1-x)2Te3 (CBST) on GaAs (111) substrates for Quantum Anomalous Hall Effect (QAH) is actually one of the examples of qvdWE, which is not well noticed despite the fact that its advantages have been us…
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Quasi van der Waals Epitaxy (qvdWE) has been realized for decades at the interfaces between 3D and 2D materials or van der Waals materials. The growth of magnetic topological insulators (MTI) Cr: (BixSb1-x)2Te3 (CBST) on GaAs (111) substrates for Quantum Anomalous Hall Effect (QAH) is actually one of the examples of qvdWE, which is not well noticed despite the fact that its advantages have been used in growth of various MTI materials. This is distinguished from the growth of MTIs on other substrates. Although the qvdWE mode has been used in many 2D growth on III-V substrates, the specific features and mechanisms are not well demonstrated and summarized yet. Here in this work, we have for the first time shown the features of both coherent interfaces and the existence of strain originating from qvdWE at the same time.
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Submitted 12 March, 2024;
originally announced March 2024.
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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Surface skyrmions and dual topological Hall effect in antiferromagnetic topological insulator EuCd$_2$As$_2$
Authors:
Min Wu,
R. Yang,
Xiangde Zhu,
Yixiong Ren,
Ang Qian,
Yongjie Xie,
Changming Yue,
Yong Nie,
Xiang Yuan,
Ning Wang,
Daifeng Tu,
Ding Li,
Yuyan Han,
Zhaosheng Wang,
Yaomin Dai,
Guolin Zheng,
Jianhui Zhou,
Wei Ning,
Xianggang Qiu,
Mingliang Tian
Abstract:
In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the…
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In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the positive to negative and negative to positive magnetic field hysteresis branches emerges below 20~K. With magnetic force microscopy (MFM) images and numerical simulations, we attribute the dual topological Hall effect to the Néel-type skyrmions stabilized by the interactions between topological surface states and magnetism, and the sign reversal in different hysteresis branches indicates potential coexistence of skyrmions and antiskyrmions. Our work uncovers a unique two-dimensional (2D) magnetism on the surface of intrinsic AFM TI, providing a promising platform for novel topological quantum states and AFM spintronic applications.
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Submitted 27 November, 2023;
originally announced November 2023.
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One-dimensional moire chains with partially-filled flat bands in two-dimensional twisted bilayer WSe2
Authors:
Ya-Ning Ren,
Hui-Ying Ren,
Kenji Watanabe,
Takashi Taniguchi,
Lin He
Abstract:
Two-dimensional (2D) moire systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron-electron interactions in partially-filled flat bands1-11. A natural question arises: is it possible to expand the 2D correlated moire physics to one-dimensional (1D)? This requires selectively doping of 1D…
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Two-dimensional (2D) moire systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron-electron interactions in partially-filled flat bands1-11. A natural question arises: is it possible to expand the 2D correlated moire physics to one-dimensional (1D)? This requires selectively doping of 1D moire chain embedded in the 2D moire systems, which is an outstanding challenge in experiment and seems to be not within the grasp of today's technology. Therefore, an experimental demonstration of the 1D moire chain with partially-filled flat bands remains absent. Here we show that we can introduce 1D boundaries, separating two regions with different twist angles, in twisted bilayer WSe2 (tWSe2) by using scanning tunneling microscopy (STM), and demonstrate that the flat bands of moire sites along the 1D boundaries can be selectively filled. The charge and discharge states of correlated moire electrons in the 1D moire chain can be directly imaged and manipulated by combining a back-gate voltage with the STM bias. Our results open the door for realizing new correlated electronic states of the 1D moire chain in 2D systems.
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Submitted 27 November, 2023;
originally announced November 2023.
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Tunable interfacial chemisorption with atomic-level precision in a graphene WSe2 heterostructure
Authors:
Mo-Han Zhang,
Fei Gao,
Aleksander Bach Lorentzen,
Ya-Ning Ren,
Ruo-Han Zhang,
Xiao-Feng Zhou,
Rui Dong,
Shi-Wu Gao,
Mads Brandbyge,
Lin He
Abstract:
It has long been an ultimate goal to introduce chemical doping at the atomic level to precisely tune properties of materials. Two-dimensional materials have natural advantage because of its highly-exposed surface atoms, however, it is still a grand challenge to achieve this goal experimentally. Here, we demonstrate the ability to introduce chemical doping in graphene with atomic-level precision by…
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It has long been an ultimate goal to introduce chemical doping at the atomic level to precisely tune properties of materials. Two-dimensional materials have natural advantage because of its highly-exposed surface atoms, however, it is still a grand challenge to achieve this goal experimentally. Here, we demonstrate the ability to introduce chemical doping in graphene with atomic-level precision by controlling chemical adsorption of individual Se atoms, which are extracted from the underneath WSe2, at the interface of graphene-WSe2 heterostructures. Our scanning tunneling microscopy (STM) measurements, combined with first-principles calculations, reveal that individual Se atoms can chemisorbed on three possible positions in graphene, which generate distinct pseudospin-mediated atomic-scale vortices in graphene. We demonstrate that the chemisorbed positions of individual Se atoms can be manipulated by STM tip, which enables us to achieve atomic-scale controlling quantum interference of the pseudospin-mediated vortices in graphene. This result offers the promise of controlling properties of materials through chemical doping with atomic-level precision.
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Submitted 11 November, 2023;
originally announced November 2023.
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Tunable Atomically Wide Electrostatic Barriers Embedded in a Graphene WSe2 Heterostructure
Authors:
Hui-Ying Ren,
Yue Mao,
Ya-Ning Ren,
Qing-Feng Sun,
Lin He
Abstract:
Inducing and controlling electrostatic barriers in two-dimensional (2D) quantum materials has shown extraordinary promise to enable control of charge carriers, and is key for the realization of nanoscale electronic and optoelectronic devices1-10. Because of their atomically thin nature, the 2D materials have a congenital advantage to construct the thinnest possible p-n junctions1,3,7,9,10. To real…
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Inducing and controlling electrostatic barriers in two-dimensional (2D) quantum materials has shown extraordinary promise to enable control of charge carriers, and is key for the realization of nanoscale electronic and optoelectronic devices1-10. Because of their atomically thin nature, the 2D materials have a congenital advantage to construct the thinnest possible p-n junctions1,3,7,9,10. To realize the ultimate functional unit for future nanoscale devices, creating atomically wide electrostatic barriers embedded in 2D materials is desired and remains an extremely challenge. Here we report the creation and manipulation of atomically wide electrostatic barriers embedded in graphene WSe2 heterostructures. By using a STM tip, we demonstrate the ability to generate a one-dimensional (1D) atomically wide boundary between 1T-WSe2 domains and continuously tune positions of the boundary because of ferroelasticity of the 1T-WSe2. Our experiment indicates that the 1D boundary introduces atomically wide electrostatic barriers in graphene above it. Then the 1D electrostatic barrier changes a single graphene WSe2 heterostructure quantum dot from a relativistic artificial atom to a relativistic artificial molecule.
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Submitted 29 October, 2023;
originally announced October 2023.
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Observation of Flat Band and Van Hove Singularity in Non-superconducting Nitrogen-doped Lutetium Hydride
Authors:
Xin Liang,
Zihan Lin,
Jun Zhang,
Jianfa Zhao,
Shiyu Feng,
Wenlong Lu,
Guodong Wang,
Luchuan Shi,
Ningning Wang,
Pengfei Shan,
Zao Zhang,
Muntaser Naamneh,
Runzhe Liu,
Bastien Michon,
Jinguang Cheng,
Changqing Jin,
Yang Ren,
Junzhang Ma
Abstract:
Hydrogen-rich materials offer a compelling avenue towards room temperature superconductivity, albeit under ultra-high pressure. However, the experimental investigation of the electronic band structure remains elusive, due to the inherent instability of most of the hydrogen-rich materials upon pressure release. Very recently, nitrogen-doped lutetium hydride was claimed to host room temperature supe…
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Hydrogen-rich materials offer a compelling avenue towards room temperature superconductivity, albeit under ultra-high pressure. However, the experimental investigation of the electronic band structure remains elusive, due to the inherent instability of most of the hydrogen-rich materials upon pressure release. Very recently, nitrogen-doped lutetium hydride was claimed to host room temperature superconductivity under near ambient pressure but was disproven by following works. Upon decompression, nitrogen doped lutetium hydride manifests a stable metallic phase with dark blue color. Moreover, high temperature superconductivity has been reported in lutetium hydrides Lu4H23 (~71 K) under around 200 GPa. These properties engender an unprecedented opportunity, allowing for the experimental investigation of the electronic band structure intrinsic to hydrogen-rich material. In this work, using angle resolved photoemission spectroscopy to investigate the non-superconducting nitrogen doped lutetium hydride, we observed significant flat band and Van Hove singularity marginally below the Fermi level. These salient features, identified as critical elements, proffer potential amplifiers for the realization of heightened superconductivity, as evidenced by prior research. Our results not only unveil a confluence of potent strong correlation effects and anisotropy within the Lu-H-N compound, but also provide a prospect for engineering high temperature superconductivity through the strategic manipulation of flat band and the VHS, effectively tailoring their alignment with the Fermi energy.
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Submitted 8 September, 2023; v1 submitted 30 August, 2023;
originally announced August 2023.
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Light Driven Spontaneous Phonon Chirality and Magnetization in Paramagnets
Authors:
Yafei Ren,
Mark Rudner,
Di Xiao
Abstract:
Spin-phonon coupling enables the mutual manipulation of phonon and spin degrees of freedom in solids. In this study, we reveal the inherent nonlinearity within this coupling. Using a paramagnet as an illustration, we demonstrate the nonlinearity by unveiling spontaneous symmetry breaking under a periodic drive. The drive originates from linearly polarized light, respecting a mirror reflection symm…
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Spin-phonon coupling enables the mutual manipulation of phonon and spin degrees of freedom in solids. In this study, we reveal the inherent nonlinearity within this coupling. Using a paramagnet as an illustration, we demonstrate the nonlinearity by unveiling spontaneous symmetry breaking under a periodic drive. The drive originates from linearly polarized light, respecting a mirror reflection symmetry of the system. However, this symmetry is spontaneously broken in the steady state, manifested in the emergence of coherent chiral phonons accompanied by a nonzero magnetization. We establish an analytical self-consistent equation to find the parameter regime where spontaneous symmetry breaking occurs. Furthermore, we estimate realistic parameters and discuss potential materials that could exhibit this behavior. Our findings shed light on the exploration of nonlinear phenomena in magnetic materials and present possibilities for on-demand control of magnetization.
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Submitted 2 August, 2023;
originally announced August 2023.
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Multiple magnetoplasmon polaritons of magneto-optical graphene in near-field radiative heat transfer
Authors:
Ming-Jian He,
Lei Qu,
Ya-Tao Ren,
Hong Qi,
Mauro Antezza,
He-Ping Tan
Abstract:
Graphene, as a two-dimensional magneto-optical material, supports magnetoplasmon polaritons (MPP) when exposed to an applied magnetic field. Recently, MPP of a single-layer graphene has shown an excellent capability in the modulation of near-field radiative heat transfer (NFRHT). In this study, we present a comprehensive theoretical analysis of NFRHT between two multilayered graphene structures, w…
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Graphene, as a two-dimensional magneto-optical material, supports magnetoplasmon polaritons (MPP) when exposed to an applied magnetic field. Recently, MPP of a single-layer graphene has shown an excellent capability in the modulation of near-field radiative heat transfer (NFRHT). In this study, we present a comprehensive theoretical analysis of NFRHT between two multilayered graphene structures, with a particular focus on the multiple MPP effect. We reveal the physical mechanism and evolution law of the multiple MPP, and we demonstrate that the multiple MPP allow one to mediate, enhance, and tune the NFRHT by appropriately engineering the properties of graphene, the number of graphene sheets, the intensity of magnetic fields, as well as the geometric structure of systems. We show that the multiple MPP have a quite significant distinction relative to the single MPP or multiple surface plasmon polaritons (SPPs) in terms of modulating and manipulating NFRHT.
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Submitted 24 June, 2023;
originally announced June 2023.
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Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening
Authors:
Yue-Jiao Zhang,
Yin-Ti Ren,
Xiao-Huan Lv,
Xiao-Lin Zhao,
Rui Yang,
Nie-Wei Wang,
Chen-Dong Jin,
Hu Zhang,
Ru-Qian Lian,
Peng-Lai Gong,
Rui-Ning Wang,
Jiang-Long Wang,
Xing-Qiang Shi
Abstract:
Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations - that is, the valence band edge at the Gamma point (the Brillouin-zone center) for one 2DS and the conduction band edge at the Gamma point for the other [Ubrig et al., Nat. Mater. 19, 299 (2020)]. However, the band…
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Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations - that is, the valence band edge at the Gamma point (the Brillouin-zone center) for one 2DS and the conduction band edge at the Gamma point for the other [Ubrig et al., Nat. Mater. 19, 299 (2020)]. However, the band offset sizes, band-alignment types, and whether momentum matched or not, all are affected by the interfacial effects between the component 2DSs, such as the quasichemical-bonding (QB) interaction between layers and the electrical dipole moment formed around the vdW interface. Here, based on density-functional theory calculations, first we probe the interfacial effects (including different QBs for valence and conduction bands, interface dipole, and, the synergistic effects of these two aspects) on band-edge evolution in energy and valley (location in the Brillouin zone) and the resulting changes in band alignment and momentum matching for a typical vdWH of monolayer InSe and bilayer WS2, in which the band edges of subsystems satisfy the special band-structure combination for a momentum-matched type II vdWH. Then, based on the conclusions of the studied interfacial effects, we propose a practical screening method for robust momentum-matched type II vdWHs. This practical screening method can also be applied to other band alignment types. Our current study opens a way for practical screening and designing of vdWHs with robust momentum-matching and band alignment type.
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Submitted 22 June, 2023;
originally announced June 2023.
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Interaction-driven spontaneous broken-symmetry insulator and metals in ABCA tetralayer graphene
Authors:
Kai Liu,
Jian Zheng,
Yating Sha,
Bosai Lyu,
Fengping Li,
Youngju Park,
Yulu Ren,
Kenji Watanabe,
Takashi Taniguchi,
Jinfeng Jia,
Weidong Luo,
Zhiwen Shi,
Jeil Jung,
Guorui Chen
Abstract:
Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the st…
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Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced due to the significant reduction in kinetic energy. In this study, we employ phonon-polariton assisted near-field infrared imaging to determine the stacking orders of tetralayer graphene devices. Through quantum transport measurements, we observe a range of spontaneous broken-symmetry states and their transitions, which can be finely tuned by carrier density n and electric displacement field D. Specifically, we observe a layer antiferromagnetic insulator at n = D = 0 with a gap of approximately 15 meV. Increasing D allows for a continuous phase transition from a layer antiferromagnetic insulator to a layer polarized insulator. By simultaneously tuning n and D, we observe isospin polarized metals, including spin-valley-polarized and spin-polarized metals. These transitions are associated with changes in Fermi surface topology and are consistent with the Stoner criteria. Our findings highlight the efficient fabrication of specially stacked multilayer graphene devices and demonstrate that crystalline multilayer graphene is an ideal platform for investigating a wide range of broken symmetries driven by Coulomb interactions.
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Submitted 19 June, 2023;
originally announced June 2023.
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Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator
Authors:
Lixuan Tai,
Haoran He,
Su Kong Chong,
Huairuo Zhang,
Hanshen Huang,
Gang Qiu,
Yaochen Li,
Hung-Yu Yang,
Ting-Hsun Yang,
Xiang Dong,
Yuxing Ren,
Bingqian Dai,
Tao Qu,
Qingyuan Shu,
Quanjun Pan,
Peng Zhang,
Fei Xue,
Jie Li,
Albert V. Davydov,
Kang L. Wang
Abstract:
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic fie…
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Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 $kΩ$ is realized, among the largest of all SOT systems. The SOT switching current density can be reduced to $2.8\times10^5 A/cm^2$. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to $1.56\pm 0.12 T/ (10^6 A/cm^2)$ and the interfacial charge-to-spin conversion efficiency to $3.9\pm 0.3 nm^{-1}$. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices.
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Submitted 12 May, 2024; v1 submitted 8 June, 2023;
originally announced June 2023.
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Real higher-order Weyl photonic crystal
Authors:
Yuang Pan,
Chaoxi Cui,
Qiaolu Chen,
Fujia Chen,
Li Zhang,
Yudong Ren,
Ning Han,
Wenhao Li,
Xinrui Li,
Zhi-Ming Yu,
Hongsheng Chen,
Yihao Yang
Abstract:
Higher-order Weyl semimetals are a family of recently predicted topological phases simultaneously showcasing unconventional properties derived from Weyl points, such as chiral anomaly, and multidimensional topological phenomena originating from higher-order topology. The higher-order Weyl semimetal phases, with their higher-order topology arising from quantized dipole or quadrupole bulk polarizati…
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Higher-order Weyl semimetals are a family of recently predicted topological phases simultaneously showcasing unconventional properties derived from Weyl points, such as chiral anomaly, and multidimensional topological phenomena originating from higher-order topology. The higher-order Weyl semimetal phases, with their higher-order topology arising from quantized dipole or quadrupole bulk polarizations, have been demonstrated in phononics and circuits. Here, we experimentally discover a class of higher-order Weyl semimetal phase in a three-dimensional photonic crystal (PhC), exhibiting the concurrence of the surface and hinge Fermi arcs from the nonzero Chern number and the nontrivial generalized real Chern number, respectively, coined a real higher-order Weyl PhC. Notably, the projected two-dimensional subsystem with kz = 0 is a real Chern insulator, belonging to the Stiefel-Whitney class with real Bloch wavefunctions, which is distinguished fundamentally from the Chern class with complex Bloch wavefunctions. Our work offers an ideal photonic platform for exploring potential applications and material properties associated with the higher-order Weyl points and the Stiefel-Whitney class of topological phases.
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Submitted 4 June, 2023;
originally announced June 2023.
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Quantifying the magnetic interactions governing chiral spin textures using deep neural networks
Authors:
Jian Feng Kong,
Yuhua Ren,
M. S. Nicholas Tey,
Pin Ho,
Khoong Hong Khoo,
Xiaoye Chen,
Anjan Soumyanarayanan
Abstract:
The interplay of magnetic interactions in chiral multilayer films gives rise to nanoscale topological spin textures, which form attractive elements for next-generation computing. Quantifying these interactions requires several specialized, time-consuming, and resource-intensive experimental techniques. Imaging of ambient domain configurations presents a promising avenue for high-throughput extract…
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The interplay of magnetic interactions in chiral multilayer films gives rise to nanoscale topological spin textures, which form attractive elements for next-generation computing. Quantifying these interactions requires several specialized, time-consuming, and resource-intensive experimental techniques. Imaging of ambient domain configurations presents a promising avenue for high-throughput extraction of the parent magnetic interactions. Here we present a machine learning-based approach to determine the key interactions -- symmetric exchange, chiral exchange, and anisotropy -- governing chiral domain phenomenology in multilayers. Our convolutional neural network model, trained and validated on over 10,000 domain images, achieved $R^2 > 0.85$ in predicting the parameters and independently learned physical interdependencies between them. When applied to microscopy data acquired across samples, our model-predicted parameter trends are consistent with independent experimental measurements. These results establish ML-driven techniques as valuable, high-throughput complements to conventional determination of magnetic interactions, and serve to accelerate materials and device development for nanoscale electronics.
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Submitted 4 May, 2023;
originally announced May 2023.
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Single-shot spatial instability and electric control of polariton condensates at room temperature
Authors:
Ying Gao,
Xuekai Ma,
Xiaokun Zhai,
Chunzi Xing,
Meini Gao,
Haitao Dai,
Hao Wu,
Tong Liu,
Yuan Ren,
Xiao Wang,
Anlian Pan,
Wei Hu,
Stefan Schumacher,
Tingge Gao
Abstract:
In planar microcavities, the transverse-electric and transverse-magnetic (TE-TM) mode splitting of cavity photons arises due to their different penetration into the Bragg mirrors and can result in optical spin-orbit coupling (SOC). In this work, we find that in a liquid crystal (LC) microcavity filled with perovskite microplates, the pronounced TE-TM splitting gives rise to a strong SOC that leads…
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In planar microcavities, the transverse-electric and transverse-magnetic (TE-TM) mode splitting of cavity photons arises due to their different penetration into the Bragg mirrors and can result in optical spin-orbit coupling (SOC). In this work, we find that in a liquid crystal (LC) microcavity filled with perovskite microplates, the pronounced TE-TM splitting gives rise to a strong SOC that leads to the spatial instability of microcavity polariton condensates under single-shot excitation. Spatially varying hole burning and mode competition occurs between polarization components leading to different condensate profiles from shot to shot. The single-shot polariton condensates become stable when the SOC vanishes as the TE and TM modes are spectrally well separated from each other, which can be achieved by application of an electric field to our LC microcavity with electrically tunable anisotropy. Our findings are well reproduced and traced back to their physical origin by our detailed numerical simulations. With the electrical manipulation our work reveals how the shot-to-shot spatial instability of spatial polariton profiles can be engineered in anisotropic microcavities at room temperature, which will benefit the development of stable polariton-based optoeletronic and light-emitting devices.
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Submitted 2 May, 2023;
originally announced May 2023.
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Evolution of medium-range order and its correlation with magnetic nanodomains in Fe-Dy-B-Nb bulk metallic glasses
Authors:
Jiacheng Ge,
Yao Gu,
Zhongzhen Yao,
Sinan Liu,
Huiqiang Ying,
Chenyu Lu,
Zhenduo Wu,
Yang Ren,
Jun-ichi Suzuki,
Zhenhua Xie,
Yubin Ke,
He Zhu,
Song Tang,
Xun-Li Wang,
Si Lan
Abstract:
Fe-based metallic glasses are promising functional materials for advanced magnetism and sensor fields. Tailoring magnetic performance in amorphous materials requires a thorough knowledge of the correlation between structural disorder and magnetic order, which remains ambiguous. Two practical difficulties remain: the first is directly observing subtle magnetic structural changes on multiple scales,…
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Fe-based metallic glasses are promising functional materials for advanced magnetism and sensor fields. Tailoring magnetic performance in amorphous materials requires a thorough knowledge of the correlation between structural disorder and magnetic order, which remains ambiguous. Two practical difficulties remain: the first is directly observing subtle magnetic structural changes on multiple scales, and the second is precisely regulating the various amorphous states. Here we propose a novel approach to tailor the amorphous structure through the liquid liquid phase transition. In-situ synchrotron diffraction has unraveled a medium-range ordering process dominated by edge-sharing cluster connectivity during the liquid-liquid phase transition. Moreover, nanodomains with topological order have been found to exist in composition with liquid-liquid phase transition, manifesting as hexagonal patterns in small-angle neutron scattering profiles. The liquid-liquid phase transition can induce the nanodomains to be more locally ordered, generating stronger exchange interactions due to the reduced Fe-Fe bond and the enhanced structural order, leading to the increment of saturation magnetization. Furthermore, the increased local heterogeneity in the medium range scale enhances the magnetic anisotropy, promoting the permeability response under applied stress and leading to a better stress-impedance effect. These experimental results pave the way to tailor the magnetic structure and performance through the liquid-liquid phase transition.
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Submitted 29 April, 2023;
originally announced May 2023.
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Gate-tunable phonon magnetic moment in bilayer graphene
Authors:
Xiao-Wei Zhang,
Yafei Ren,
Chong Wang,
Ting Cao,
Di Xiao
Abstract:
We develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phono…
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We develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phonon magnetic moments. Furthermore, the magnetic moment is highly tunable by changing the gate voltage. Our results firmly establish the necessity of the quantum mechanical treatment, and identify small-gap covalent materials as a promising platform for studying tunable phonon magnetic moment.
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Submitted 21 April, 2023;
originally announced April 2023.
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Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4
Authors:
Ruobing Mei,
Yi-Fan Zhao,
Chong Wang,
Yafei Ren,
Di Xiao,
Cui-Zu Chang,
Chao-Xing Liu
Abstract:
In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi2Te4 thin films with electron doping. In particular, we show that the non-zero hysteresis loops in the anomalous Hall and magnetic circular dichroism measur…
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In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi2Te4 thin films with electron doping. In particular, we show that the non-zero hysteresis loops in the anomalous Hall and magnetic circular dichroism measurements for even-SLs MnBi2Te4 films are originated from two different anti-ferromagnetic (AFM) states with opposite magnetoelectric coefficients that give rise to different energies of zeroth Landau levels of the surface states in this model. The complex form of the anomalous Hall hysteresis loop in even-SLs MnBi2Te4 films can be understood from two magnetic transitions, a transition from one AFM state to the other AFM state followed by a second transition to the ferromagnetic state. Our model also provides a microscopic understanding of the electrical switching between two AFM states via the axion electrodynamics in even-SL MnBi2Te4 films. We further study orbital magnetization and magnetoelectric coefficient in MnBi2Te4 films, and find an even-odd oscillation behavior of the magnetoelectric coefficient.
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Submitted 18 March, 2024; v1 submitted 10 March, 2023;
originally announced March 2023.
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Demonstration of NV-detected $^{13}$C NMR at 4.2 T
Authors:
Yuhang Ren,
Cooper Selco,
Dylan Kawashiri,
Michael Coumans,
Benjamin Fortman,
Louis S. Bouchard,
Karoly Holczer,
Susumu Takahashi
Abstract:
The nitrogen-vacancy (NV) center in diamond has enabled studies of nanoscale nuclear magnetic resonance (NMR) and electron paramagnetic resonance with high sensitivity in small sample volumes. Most NV-detected NMR (NV-NMR) experiments are performed at low magnetic fields. While low fields are useful in many applications, high-field NV-NMR with fine spectral resolution, high signal sensitivity, and…
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The nitrogen-vacancy (NV) center in diamond has enabled studies of nanoscale nuclear magnetic resonance (NMR) and electron paramagnetic resonance with high sensitivity in small sample volumes. Most NV-detected NMR (NV-NMR) experiments are performed at low magnetic fields. While low fields are useful in many applications, high-field NV-NMR with fine spectral resolution, high signal sensitivity, and the capability to observe a wider range of nuclei is advantageous for surface detection, microfluidic, and condensed matter studies aimed at probing micro- and nanoscale features. However, only a handful of experiments above 1 T were reported. Herein, we report $^{13}$C NV-NMR spectroscopy at 4.2 T, where the NV Larmor frequency is 115 GHz. Using an electron-nuclear double resonance technique, we successfully detect NV-NMR of two diamond samples. The analysis of the NMR linewidth based on the dipolar broadening theory of Van Vleck shows that the observed linewidths from sample 1 are consistent with the intrinsic NMR linewidth of the sample. For sample 2 we find a narrower linewidth of 44 ppm. This work paves the way for new applications of nanoscale NV-NMR.
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Submitted 21 July, 2023; v1 submitted 1 March, 2023;
originally announced March 2023.
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Tailoring interfacial nanostructures at graphene/transition metal dichalcogenide heterostructures
Authors:
Ya-Ning Ren,
Mo-Han Zhang,
Qi Zheng,
Lin He
Abstract:
Integration of two-dimensional (2D) van der Waals (vdWs) materials with non-2D materials to realize mixed-dimensional heterostructures has potential for creating functional devices beyond the reach of existing materials and has long been a pursuit of the material science community. Here we report the patterning of monolayer/bilayer transition metal dichalcogenide (TMD) nanostructures with nanomete…
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Integration of two-dimensional (2D) van der Waals (vdWs) materials with non-2D materials to realize mixed-dimensional heterostructures has potential for creating functional devices beyond the reach of existing materials and has long been a pursuit of the material science community. Here we report the patterning of monolayer/bilayer transition metal dichalcogenide (TMD) nanostructures with nanometer-precision, tunable sizes and sites at interfaces of graphene/TMD heterostructures. Our experiments demonstrate that the TMD nanostructures can be created at selected positions of the interface using scanning tunneling microscope lithography and, more importantly, the sizes of the interfacial TMD nanostructures can be tuned with nanoscale precise by merging adjacent TMD nanostructures or by further tailoring. A structural phase transition from hexagonal phase in bulk TMD to monoclinic phase in the interfacial nanostructures is explicitly observed, which locally introduce well-defined electrostatic potentials on graphene. These results not only enable the creation of high-quality patterned p-n junctions in vdWs heterostructures, but also provide a new route to realize custom-designed mixed-dimensional heterostructures.
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Submitted 4 December, 2022;
originally announced December 2022.
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Experimental evidence for electron-electron interaction and spin-charge separation in graphene quantum dots
Authors:
Hui-Ying Ren,
Ya-Ning Ren,
Qi Zheng,
Jia-Qi He,
Lin He
Abstract:
Graphene quantum dots (GQDs) can exhibit a range of spectacular phenomena such as the Klein-tunneling-induced quasibound states1-6 and Berry-phase-tuned energy spectra7-15. According to previous studies, all these interesting quantum phenomena seem to be well understood in the free electron picture1-15. However, electronic motion in the GQDs is reduced to quantized orbits by quantum confinement, w…
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Graphene quantum dots (GQDs) can exhibit a range of spectacular phenomena such as the Klein-tunneling-induced quasibound states1-6 and Berry-phase-tuned energy spectra7-15. According to previous studies, all these interesting quantum phenomena seem to be well understood in the free electron picture1-15. However, electronic motion in the GQDs is reduced to quantized orbits by quantum confinement, which implies that the kinetic energy may be comparable to or even smaller than the Coulomb energy of the quasiparticles, possibly resulting in exotic correlated phases in the GQDs. Here we present a scanning tunneling microscopy and spectroscopy study of gate-tunable GQDs in graphene/WSe2 heterostructure devices and report for the first time the observation of electron-electron interaction and correlation-induced spin-charge separation in the GQDs. Gating allows us to precise characterize effects of the electron-electron interaction on the energy spectra of the GQDs. By measuring density of states as a function of energy and position, we explicitly uncover two density waves with different velocities in the GQDs, attributing to spin-charge separation in real space.
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Submitted 29 November, 2022;
originally announced November 2022.
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Mixed-dimensional moiré systems of graphitic thin films with a twisted interface
Authors:
Dacen Waters,
Ellis Thompson,
Esmeralda Arreguin-Martinez,
Manato Fujimoto,
Yafei Ren,
Kenji Watanabe,
Takashi Taniguchi,
Ting Cao,
Di Xiao,
Matthew Yankowitz
Abstract:
Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the pro…
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Moiré patterns formed by stacking atomically-thin van der Waals crystals with a relative twist angle can give rise to dramatic new physical properties. The study of moiré materials has so far been limited to structures comprising no more than a few vdW sheets, since a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the properties of a bulk three-dimensional crystal. Layered semimetals such as graphite offer a unique platform to challenge this paradigm, owing to distinctive properties arising from their nearly-compensated electron and hole bulk doping. Here, we perform transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal. We find that the moiré potential transforms the electronic properties of the entire bulk graphitic thin film. At zero and small magnetic fields, transport is mediated by a combination of gate-tunable moiré and graphite surface states, as well as coexisting semimetallic bulk states that do not respond to gating. At high field, the moiré potential hybridizes with the graphitic bulk states owing to the unique properties of the two lowest Landau bands of graphite. These Landau bands facilitate the formation of a single quasi-two-dimensional hybrid structure in which the moiré and bulk graphite states are inextricably mixed. Our results establish twisted graphene-graphite as the first in a new class of mixed-dimensional moiré materials.
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Submitted 28 November, 2022;
originally announced November 2022.
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Chiral coupling between a ferromagnetic magnon and a superconducting qubit
Authors:
Ya-long Ren,
Sheng-li Ma,
Fu-li Li
Abstract:
Chiral coupling at the single-quantum level promises to be a remarkable potential for quantum information processing. Here we propose to achieve a chiral interaction between a magnon mode in a ferromagnetic sphere and a superconducting qubit mediated by a one-dimensional coupled-cavity array. When the qubit is coupled to two lattice sites of the array and each one is encoded with a tunable phase,…
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Chiral coupling at the single-quantum level promises to be a remarkable potential for quantum information processing. Here we propose to achieve a chiral interaction between a magnon mode in a ferromagnetic sphere and a superconducting qubit mediated by a one-dimensional coupled-cavity array. When the qubit is coupled to two lattice sites of the array and each one is encoded with a tunable phase, we can acquire a directional qubit-magnon interaction via the quantum interference effect. This work opens up a new route to construct chiral devices, which are expected to become a building block in quantum magnonic networks.
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Submitted 15 November, 2022; v1 submitted 9 November, 2022;
originally announced November 2022.
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Anomalous supercurrent modulated by interfacial magnetizations in Josephson junctions with ferromagnetic bilayers
Authors:
Hao Meng,
Xiuqiang Wu,
Yajie Ren,
Jiansheng Wu
Abstract:
Based on the Bogoliubov-de Gennes equations, we investigate the transport of the Josephson current in a S/$f_L$-F$_1$-$f_C$-F$_2$-$f_R$/S junction, where S and F$_{1,2}$ are superconductors and ferromagnets, and $f_{L, C, R}$ are the left, central, and right spin-active interfaces. These interfaces have noncollinear magnetizations, and the azimuthal angles of the magnetizations at the…
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Based on the Bogoliubov-de Gennes equations, we investigate the transport of the Josephson current in a S/$f_L$-F$_1$-$f_C$-F$_2$-$f_R$/S junction, where S and F$_{1,2}$ are superconductors and ferromagnets, and $f_{L, C, R}$ are the left, central, and right spin-active interfaces. These interfaces have noncollinear magnetizations, and the azimuthal angles of the magnetizations at the $f_{L, C, R}$ interfaces are $χ_{L, C, R}$. We demonstrate that, if both the ferromagnets have antiparallel magnetizations, the critical current oscillates as a function of the exchange field and the thickness of the ferromagnets for particular $χ_L$ or $χ_R$. By contrast, when the magnetization at the $f_C$ interface is perpendicular to that at the $f_L$ and $f_R$ interfaces, the critical current reaches a larger value and is hardly affected by the exchange field and the thickness. Interestingly, if both the ferromagnets are converted to antiparallel half-metals, the critical current maintains a constant value and rarely changes with the ferromagnetic thicknesses and the azimuthal angles. At this time, an anomalous supercurrent can appear in the system, in which case the Josephson current still exists even if the superconducting phase difference $φ$ is zero. This supercurrent satisfies the current-phase relation $I=I_c\sin(φ+φ_0)$ with $I_c$ being the critical current and $φ_0=2χ_C-χ_L-χ_R$. We deduce that the additional phase $φ_0$ arises from phase superposition, where the phase is captured by the spin-triplet pairs when they pass through each spin-active interface. In addition, when both the ferromagnets are transformed into parallel half-metals, the $f_C$ interface never contributes any phase to the supercurrent and $φ_0=χ_R-χ_L+π$. In such a case, the current-phase relation is similar to that in a S/$f_L$-F-$f_R$/S junction.
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Submitted 23 October, 2022;
originally announced October 2022.
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Coexistence of Reconstructed and Unreconstructed Structures in Structural Transition Regime of Twisted Bilayer Graphene
Authors:
Xiao-Feng Zhou,
Yi-Wen Liu,
Chen-Yue Hao,
Chao Yan,
Qi Zheng,
Ya-Ning Ren,
Ya-Xin Zhao,
Kenji Watanabe,
Takashi Taniguchi,
Lin He
Abstract:
In twisted bilayer graphene (TBG), a twist-angle-dependent competition between interlayer stacking energy and intralayer elastic energy results in flat rigid layers at large twist angles and lattice reconstruction at small twist angles. Despite enormous scientific interest and effort in the TBG, however, an experimental study of evolution from the rigid lattice to the reconstructed lattice as a fu…
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In twisted bilayer graphene (TBG), a twist-angle-dependent competition between interlayer stacking energy and intralayer elastic energy results in flat rigid layers at large twist angles and lattice reconstruction at small twist angles. Despite enormous scientific interest and effort in the TBG, however, an experimental study of evolution from the rigid lattice to the reconstructed lattice as a function of twist angle is still missing. Here we present a scanning tunneling microscopy and spectroscopy study to reveal the twist-angle-dependent lattice reconstruction in the TBG. Our experiment demonstrates that there is a transition regime between the rigid regime and the relaxed regime and, unexpectedly, the reconstructed and unreconstructed structures coexist in the transition regime. The coexistence of the two distinct structures in this regime may arise from subtle balance between the interlayer stacking energy and intralayer elastic energy in the TBG with intermediate moiré sizes.
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Submitted 29 September, 2022;
originally announced September 2022.
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Tunable Exciton-Hybridized Magnon Interactions in a Layered Semiconductor
Authors:
Geoffrey M. Diederich,
John Cenker,
Yafei Ren,
Jordan Fonseca,
Daniel G. Chica,
Youn Jue Bae,
Xiaoyang Zhu,
Xavier Roy,
Ting Cao,
Di Xiao,
Xiaodong Xu
Abstract:
The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One example of such interactions is coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors provides a powerful platform for exploring these exciton-magnon interactions…
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The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One example of such interactions is coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors provides a powerful platform for exploring these exciton-magnon interactions and their fundamental properties, such as strong correlation, as well as their photo-spintronic and quantum transduction applications. Here we demonstrate precise control of coherent exciton-magnon interactions in the layered magnetic semiconductor CrSBr. We show that by controlling the direction of applied magnetic fields relative to the crystal axes, and thus the rotational symmetry of the magnetic system, we can tune not only the exciton coupling to the bright magnon, but also to an optically dark mode via magnon hybridization. The exciton-magnon coupling and associated magnon dispersion curves can be further modulated by applying a uniaxial strain. At the critical strain, a dispersionless dark magnon band emerges. Our results demonstrate unprecedented control of the opto-mechanical-magnonic coupling, and a step towards the predictable and controllable implementation of hybrid quantum magnonics.
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Submitted 27 September, 2022;
originally announced September 2022.
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Stabilizing sample-wide Kekulé orders in graphene/transition metal dichalcogenide heterostructures
Authors:
Mo-Han Zhang,
Ya-Ning Ren,
Qi Zheng,
Xiao-Feng Zhou,
Lin He
Abstract:
Kekulé phases are Peierls-like lattice distortions in graphene that are predicted to host novel electronic states beyond graphene (1-8). Although the Kekulé phases are realized in graphene through introducing electron-electron interactions at high magnetic fields (9-11) or adatom superlattices (12-15), it is still an extremely challenge to obtain large-area graphene Kekulé phases in experiment. He…
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Kekulé phases are Peierls-like lattice distortions in graphene that are predicted to host novel electronic states beyond graphene (1-8). Although the Kekulé phases are realized in graphene through introducing electron-electron interactions at high magnetic fields (9-11) or adatom superlattices (12-15), it is still an extremely challenge to obtain large-area graphene Kekulé phases in experiment. Here we demonstrate that sample-wide Kekulé distortions in graphene can be stabilized by using transition metal dichalcogenides (TMDs) as substrates and the induced Kekulé orders are quite robust in the whole graphene/TMDs heterostructures with different twist angles. The commensurate structures of the heterostructures provide periodic scattering centers that break the translational symmetry of graphene and couple electrons of the two valleys in graphene, which tips the graphene toward global Kekulé density wave phases. Unexpectedly, three distinct Kekulé bond textures stabilized at various energies are directly imaged in every graphene/TMDs heterostructure. Our results reveal an unexpected sensitivity of electronic properties in graphene to the supporting substrates and provide an attractive route toward designing novel phases in graphene/TMDs heterostructures.
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Submitted 2 August, 2022;
originally announced August 2022.
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Molecular Collapse States in Elliptical Graphene/WSe2 Heterostructure Quantum Dots
Authors:
Qi Zheng,
Yu-Chen Zhuang,
Ya-Ning Ren,
Chao Yan,
Qing-Feng Sun,
Lin He
Abstract:
In relativistic physics, both atomic collapse in heavy nucleus and Hawking radiation in black hole are predicted to occur through Klein tunneling process that couples particles and antiparticles. Recently, atomic collapse states (ACSs) were explicitly realized in graphene because of its relativistic Dirac excitation with large fine structure constant. However, essential role of the Klein tunneling…
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In relativistic physics, both atomic collapse in heavy nucleus and Hawking radiation in black hole are predicted to occur through Klein tunneling process that couples particles and antiparticles. Recently, atomic collapse states (ACSs) were explicitly realized in graphene because of its relativistic Dirac excitation with large fine structure constant. However, essential role of the Klein tunneling on the ACSs remains elusive in experiment. Here we systematically study the quasibound states in elliptical graphene quantum dots (GQDs). Bonding and antibonding molecular collapse states formed by two coupled ACSs are observed in the elliptical GQDs. Our experiments, supported by theoretical calculations, indicate that the antibonding state of the ACSs will change into a Klein-tunneling-induced quasibound state, revealing deep connection between the ACSs and the Klein tunneling.
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Submitted 14 June, 2022;
originally announced June 2022.
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Gate-tunable anomalous Hall effect in a 3D topological insulator/2D magnet van der Waals heterostructure
Authors:
Vishakha Gupta,
Rakshit Jain,
Yafei Ren,
Xiyue S. Zhang,
Husain F. Alnaser,
Amit Vashist,
Vikram V. Deshpande,
David A. Muller,
Di Xiao,
Taylor D. Sparks,
Daniel C. Ralph
Abstract:
We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet layer. We assemble bilayers with pristine interfaces using exfoliated flakes of the TI BiSbTeSe2 and the magnet Cr2Ge2Te6, thereby avoiding problems caused by interd…
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We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet layer. We assemble bilayers with pristine interfaces using exfoliated flakes of the TI BiSbTeSe2 and the magnet Cr2Ge2Te6, thereby avoiding problems caused by interdiffusion that can affect interfaces made by top-down deposition methods. The samples exhibit an anomalous Hall effect (AHE) with abrupt hysteretic switching. For the first time in samples composed of a TI and a separate ferromagnetic layer, we demonstrate that the amplitude of the AHE can be tuned via gate voltage with a strong peak near the Dirac point. This is the signature expected for the AHE due to Berry curvature associated with an exchange gap induced by interaction between the topological surface state and an out-of-plane-oriented magnet.
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Submitted 6 June, 2022;
originally announced June 2022.
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Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
Authors:
Zhenzhen Kong,
Zonghu Li,
Gang Cao,
Jiale Su,
Yiwen Zhang,
Jinbiao Liu,
Jingxiong Liu,
Yuhui Ren,
Laiming Wei,
Guoping Guo,
Yuanyuan Wu,
Henry H. Radamson,
Junfeng Li,
Zhenhua Wu,
Haiou Li,
Jiecheng Yang,
Chao Zhao,
Guilei Wang
Abstract:
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel st…
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We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.
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Submitted 3 August, 2022; v1 submitted 25 April, 2022;
originally announced April 2022.
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High-resolution Compton spectroscopy using X-ray microcalorimeters
Authors:
U. Patel,
T. Guruswamy,
A. J. Krzysko,
H. Charalambous,
L. Gades,
K. Wiaderek,
O. Quaranta,
Y. Ren,
A. Yakovenko,
A. Miceli
Abstract:
X-ray Compton spectroscopy is one of the few direct probes of the electron momentum distribution of bulk materials in ambient and operando environments. We report high-resolution inelastic X-ray scattering experiments with high momentum and energy transfer performed at a storage-ring-based high-energy X-ray light source facility using an X-ray microcalorimeter detector. Compton profiles were measu…
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X-ray Compton spectroscopy is one of the few direct probes of the electron momentum distribution of bulk materials in ambient and operando environments. We report high-resolution inelastic X-ray scattering experiments with high momentum and energy transfer performed at a storage-ring-based high-energy X-ray light source facility using an X-ray microcalorimeter detector. Compton profiles were measured for lithium and cobalt oxide powders relevant to lithium-ion battery research. Spectroscopic analysis of the measured Compton profiles shows high-sensitivity to the low-Z elements and oxidation states. The lineshape analysis of the measured Compton profiles in comparison with computed Hartree-Fock profiles is limited by the resolution of the energy-resolving semiconductor detector. We have characterized an X-ray transition-edge sensor microcalorimeter detector for high-resolution Compton scattering experiments using a bending magnet source at the Advanced Photon Source (APS) with a double crystal monochromator providing monochromatic photon energies near 27.5 keV. The momentum resolution below 0.16 atomic units was measured yielding an improvement of more than a factor of 7 over a state-of-the-art silicon drift detector for the same scattering geometry. Furthermore, the lineshapes of narrow valence and broad core electron profiles of sealed lithium metal were clearly resolved using an X-ray microcalorimeter detector compared to smeared and broadened lineshapes observed when using a silicon drift detector. High-resolution Compton scattering using the energy-resolving detector shown here presents new opportunities for spatial imaging of electron momentum distributions for a wide class of materials with applications ranging from electrochemistry to condensed matter physics.
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Submitted 1 April, 2022;
originally announced April 2022.
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Magnetic field-tunable valley-contrasting pseudomagnetic confinement in graphene
Authors:
Ya-Ning Ren,
Yu-Chen Zhuang,
Qing-Feng Sun,
Lin He
Abstract:
Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only available method to generate the quantum confinement in a continuous system. Here, we demonstrated experimentally that inhomogeneous pseudomagnetic fields in strained g…
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Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only available method to generate the quantum confinement in a continuous system. Here, we demonstrated experimentally that inhomogeneous pseudomagnetic fields in strained graphene can introduce exotic quantum confinement of massless Dirac fermions. The pseudomagnetic fields have opposite directions in the two distinct valleys of graphene. By tuning real magnetic field, the total effective magnetic fields in the two valleys are imbalanced. Then, we realized valley-contrasting spatial confinement, which lifts the valley degeneracy and results in field-tunable valley-polarized confined states in graphene. Our results provide a new avenue to manipulate the valley degree of freedom.
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Submitted 11 February, 2022;
originally announced February 2022.
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Topological Corner States in Graphene by Bulk and Edge Engineering
Authors:
Junjie Zeng,
Chen Chen,
Yafei Ren,
Zheng Liu,
Wei Ren,
Zhenhua Qiao
Abstract:
Two-dimensional higher-order topology is usually studied in (nearly) particle-hole symmetric models, so that an edge gap can be opened within the bulk one. But more often deviates the edge anticrossing even into the bulk, where corner states are difficult to pinpoint. We address this problem in a graphene-based $\mathbb{Z}_2$ topological insulator with spin-orbit coupling and in-plane magnetizatio…
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Two-dimensional higher-order topology is usually studied in (nearly) particle-hole symmetric models, so that an edge gap can be opened within the bulk one. But more often deviates the edge anticrossing even into the bulk, where corner states are difficult to pinpoint. We address this problem in a graphene-based $\mathbb{Z}_2$ topological insulator with spin-orbit coupling and in-plane magnetization both originating from substrates through a Slater-Koster multi-orbital model. The gapless helical edge modes cross inside the bulk, where is also located the magnetization-induced edge gap. After demonstrating its second-order nontriviality in bulk topology by a series of evidence, we show that a difference in bulk-edge onsite energy can adiabatically tune the position of the crossing/anticrossing of the edge modes to be inside the bulk gap. This can help unambiguously identify two pairs of topological corner states with nonvanishing energy degeneracy for a rhombic flake. We further find that the obtuse-angle pair is more stable than the acute-angle one. These results not only suggest an accessible way to "find" topological corner states, but also provide a higher-order topological version of "bulk-boundary correspondence".
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Submitted 31 March, 2022; v1 submitted 6 February, 2022;
originally announced February 2022.
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Second-Order Topological Insulator in van der Waals Heterostructures of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$
Authors:
Zheng Liu,
Yafei Ren,
Yulei Han,
Qian Niu,
Zhenhua Qiao
Abstract:
Second-order topological insulator, which has (d-2)-dimensional topological hinge or corner states, has been observed in three-dimensional materials, but has yet not been observed in two-dimensional system. In this Letter, we theoretically propose the realization of second-order topological insulator in the van der Waals heterostructure of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$. Pt$_2$HgSe$_3$ is a larg…
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Second-order topological insulator, which has (d-2)-dimensional topological hinge or corner states, has been observed in three-dimensional materials, but has yet not been observed in two-dimensional system. In this Letter, we theoretically propose the realization of second-order topological insulator in the van der Waals heterostructure of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$. Pt$_2$HgSe$_3$ is a large gap $\mathbb{Z}_2$ topological insulator. With in-plane exchange field from neighboring CoBr$_2$, a large band gap above 70 meV opens up at the edge. The corner states, which are robust against edge disorders and irregular shapes, are confirmed in the nanoflake. We further show that the second-order topological states can also be realized in the heterostructure of jacutingaite family $\mathbb{Z}_2$ topological insulators. We believe that our work will be beneficial for the experimental realization of second-order topological insulators in van der Waals layered materials.
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Submitted 1 February, 2022;
originally announced February 2022.
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Interplay between magnetism and band topology in Kagome magnets $R$Mn$_6$Sn$_6$
Authors:
Y. Lee,
R. Skomski,
X. Wang,
P. P. Orth,
Y. Ren,
Byungkyun Kang,
A. K. Pathak,
A. Kutepov,
B. N. Harmon,
R. J. McQueeney,
I. I. Mazin,
Liqin Ke
Abstract:
Kagome-lattice magnets $R$Mn$_6$Sn$_6$ recently emerged as a new platform to exploit the interplay between magnetism and topological electronic states. Some of the most exciting features of this family are the dramatic dependence of the easy magnetization direction on the rare-earth specie and the kagome geometry of the Mn planes that in principle can generate flat bands and Dirac points; gapping…
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Kagome-lattice magnets $R$Mn$_6$Sn$_6$ recently emerged as a new platform to exploit the interplay between magnetism and topological electronic states. Some of the most exciting features of this family are the dramatic dependence of the easy magnetization direction on the rare-earth specie and the kagome geometry of the Mn planes that in principle can generate flat bands and Dirac points; gapping of the Dirac points by spin-orbit coupling has been suggested recently to be responsible for the observed anomalous Hall response in the member TbMn$_6$Sn$_6$. In this paper, we address both issues with ab initio calculations. We have discovered the significant role played by higher-order crystal-field parameters and rare-earth magnetic anisotropy constants in these systems. We demonstrate that the microscopic origin of rare-earth anisotropy can also be quantified and understood at various levels: ab initio, phenomenological, and analytical. In particular, using a simple and physically transparent analytical model, we explain, with full quantitative agreement, the evolution of anisotropy across the series. We analyze the topological properties of Mn-dominated bands and demonstrate how they emerge from the multiorbital planar kagome model. We further show that the most pronounced quasi-2D dispersion are too far removed from the Fermi level, and therefore cannot explain the observed quasi-2D anomalous Hall effect. By employing ab initio many-body approaches, we demonstrate that the exchange-correlation effects for itinerant Mn-$d$ electrons do not significantly alter the obtained electronic and magnetic structure. Therefore, we conclude that, contrary to previous claims, the most pronounced 2D kagome-derived topological band features bear little relevance to transport in $R$Mn$_6$Sn$_6$, albeit they may possibly be brought to focus by electron or hole doping.
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Submitted 4 August, 2023; v1 submitted 26 January, 2022;
originally announced January 2022.
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In-situ synchrotron based high energy X-ray diffraction study of the deformation mechanism of δ-hydride in a commercially pure titanium
Authors:
Qing Tan,
Zhiran Yan,
Runguang Li,
Yang Ren,
Yandong Wang,
Baptiste Gault,
Stoichko Antonov
Abstract:
We used by in-situ high energy X-ray diffraction to inestigate the deformation behavior of Grade 2 commercially pure titanium that was hydrogen charged to form hydrides. The results showed that the peak broadening in the diffraction patterns are due to the high internal and interphase stresses generated within and around hydrides due to the volume expansion induced by the phase transformation. The…
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We used by in-situ high energy X-ray diffraction to inestigate the deformation behavior of Grade 2 commercially pure titanium that was hydrogen charged to form hydrides. The results showed that the peak broadening in the diffraction patterns are due to the high internal and interphase stresses generated within and around hydrides due to the volume expansion induced by the phase transformation. The hydrides exhibit typical high strength but brittle secondary phase behavior, which undertakes more elastic strain than matrix and is the location where cracks are first generated. Interestingly, the δ-hydrides sustain larger strains than the matrix, especially after the matrix yields. This study on the deformation mechanism of hydrides in pure titanium provides insight into the hydride deformation behavior and hydrogen embrittlement in both titanium and zirconium.
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Submitted 25 January, 2022;
originally announced January 2022.
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Two-dimensional antiferromagnetic semiconductor T'-MoTeI from first principles
Authors:
Michang Zhang,
Fei Li,
Yulu Ren,
Tengfei Hu,
Wenhui Wan,
Yong Liu,
Yanfeng Ge
Abstract:
Two-dimensional intrinsic antiferromagnetic semiconductors are expected to stand out in the spintronic field. The present work finds the monolayer T'-MoTeI is intrinsically an antiferromagnetic semiconductor by using first-principles calculation. Firstly, the dimerized distortion of the Mo atoms causes T'-MoTeI to have dynamic stability, which is different from the small imaginary frequency in the…
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Two-dimensional intrinsic antiferromagnetic semiconductors are expected to stand out in the spintronic field. The present work finds the monolayer T'-MoTeI is intrinsically an antiferromagnetic semiconductor by using first-principles calculation. Firstly, the dimerized distortion of the Mo atoms causes T'-MoTeI to have dynamic stability, which is different from the small imaginary frequency in the phonon spectrum of T-MoTeI. Secondly, T'-MoTeI is an indirect-bandgap semiconductor with 1.35 eV. Finally, in the systematic study of strain effects, there are significant changes in the electronic structure as well as the bandgap, but the antiferromagnetic ground state is not affected. Monte Carlo simulations predict that the Neel temperature of T'-MoTeI is 95 K. The results suggest that the monolayer T'-MoTeI can be a potential candidate for spintronics applications.
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Submitted 31 December, 2021;
originally announced December 2021.