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Dynamical Moiré Systems in Twisted Bilayer Optical Lattices
Authors:
Jian-Hua Zeng,
Qizhong Zhu,
Liang He
Abstract:
Moiré related physics in twisted bilayer two-dimensional (2D) materials has attracted widespread interest in condensed matter physics. Simulation of moiré related physics in cold atom platform is expected to outperform the 2D materials thanks to its advantage of higher tunablility. Here, we point out, the cold atom platform enables a new mechanism of moiré lattice formation, with intrinsic "dynami…
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Moiré related physics in twisted bilayer two-dimensional (2D) materials has attracted widespread interest in condensed matter physics. Simulation of moiré related physics in cold atom platform is expected to outperform the 2D materials thanks to its advantage of higher tunablility. Here, we point out, the cold atom platform enables a new mechanism of moiré lattice formation, with intrinsic "dynamical" character arising from interlayer interaction, in contrast to conventional moiré lattice induced by "static" ways such as single-particle interlayer tunneling or external controls. Specifically, we consider a twisted bilayer Bose-Hubbard model with vanishing interlayer tunneling, and the bilayer is solely coupled through interlayer interaction that originates from contact interaction of atoms. We find that this system hosts a plethora of novel phases unique to this dynamical lattice, including a variety of Mott insulator (MI) and superfluid (SF) phases either preserving or breaking moiré lattice symmetry, phases with one layer in SF and the other in MI, "interlocked" MI, and self-localized phases at commensurate twist angles, which exhibits the characteristics of Bose glass and quasi-many-body localization in the absence of (quasi)disorder or quasicrystalline lattices. Our prediction can be readily observed in current experimental setup of twisted bilayer optical lattices, opening up new avenues for exploring the rich physics of dynamical moiré systems in cold atoms.
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Submitted 22 June, 2024; v1 submitted 31 May, 2024;
originally announced May 2024.
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Flexible Control of Chiral Superconductivity in Optically Driven Nodal Point Superconductors with Antiferromagnetism
Authors:
Zhen Ning,
Junjie Zeng,
Da-Shuai Ma,
Dong-Hui Xu,
Rui Wang
Abstract:
Recent studies have attracted widespread attention on magnet-superconductor hybrid systems with emergent topological superconductivity. Here, we present the Floquet engineering of realistic two-dimensional topological nodal-point superconductors that are composed of antiferromagnetic monolayers in proximity to an s-wave superconductor. We show that Floquet chiral topological superconductivity aris…
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Recent studies have attracted widespread attention on magnet-superconductor hybrid systems with emergent topological superconductivity. Here, we present the Floquet engineering of realistic two-dimensional topological nodal-point superconductors that are composed of antiferromagnetic monolayers in proximity to an s-wave superconductor. We show that Floquet chiral topological superconductivity arises naturally due to light-induced breaking of the effective time-reversal symmetry. More strikingly, we find that the Floquet chiral topological superconducting phases can be flexibly controlled by irradiating elliptically polarized light, with the photon-dressed quasi-energy spectrum carrying different Chern numbers. Such optically switchable topological transition is attributed to the simultaneous creations (or annihilations) of valley pairs. Our findings provide a feasible approach for achieving the Floquet chiral topological superconductivity with flexible tunability, which would draw extensive attention in experiments.
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Submitted 11 April, 2024;
originally announced April 2024.
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Spin Signature of Majorana Fermions in Topological Nodal-Point Superconductors
Authors:
Junjie Zeng,
James Jun He,
Zhen Ning,
Dong-Hui Xu,
Rui Wang
Abstract:
In two-dimensional topological nodal superconductors, Majorana edge states have been conventionally believed to exhibit only spin-triplet pairing correlations. However, we reveal a substantial spin-singlet pairing component in Majorana edge states of antiferromagnetic topological nodal-point superconductors. This unexpected phenomenon emerges from the interplay between antiferromagnetic order and…
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In two-dimensional topological nodal superconductors, Majorana edge states have been conventionally believed to exhibit only spin-triplet pairing correlations. However, we reveal a substantial spin-singlet pairing component in Majorana edge states of antiferromagnetic topological nodal-point superconductors. This unexpected phenomenon emerges from the interplay between antiferromagnetic order and symmetry, resulting in Majorana edge states with a nearly flat band dispersion, deviating from the strictly flat band. Crucially, this phenomenon is detectable through spin-selective Andreev reflection, where the zero-bias conductance peaks are maximized when the spin of incident electrons is nearly antiparallel to that of Majorana edge excitations. This discovery unveils a unique spin signature for Andreev reflection resonances, advancing our fundamental understanding of spin-dependent mechanisms in topological superconductivity and representing a significant step towards the experimental detection of Majorana fermions.
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Submitted 5 June, 2024; v1 submitted 4 March, 2024;
originally announced March 2024.
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Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films
Authors:
Zhiqiang Tian,
Ziming Zhu,
Jiang Zeng,
Chao-Fei Liu,
Yurong Yang,
Anlian Pan,
Mingxing Chen
Abstract:
Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $α$-In$_2$Se$_3$ monolayers into a bilayer leads to polarization-dependent band structures, which yields polarization-dependent topological properties. Specifically, we find that the stat…
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Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $α$-In$_2$Se$_3$ monolayers into a bilayer leads to polarization-dependent band structures, which yields polarization-dependent topological properties. Specifically, we find that the states with interlayer ferroelectric couplings are quantum spin Hall insulators, while those with antiferroelectric polarizations are normal insulators. We further find that In$_2$Se$_3$ trilayer and quadlayer exhibit nontrivial band topology as long as in the structure the ferroelectric In$_2$Se$_3$ bilayer is antiferroelectrically coupled to In$_2$Se$_3$ monolayers or other ferroelectric In$_2$Se$_3$ bilayer. Otherwise the system is topologically trivial. The reason is that near the Fermi level the band structure of the ferroelectric In$_2$Se$_3$ bilayer has to be maintained for the nontrivial band topology. This feature can be used to design nontrivial band topology for the thicker films by a proper combination of the interlayer polarization couplings. The topological properties can be ferroelectrically tunable using the dipole locking effect. Our study reveals switchable band topology in a family of natural ferroelectrics, which provide a platform for designing new functional devices.
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Submitted 28 February, 2024;
originally announced February 2024.
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Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals
Authors:
Ashley P. Saunders,
Victoria Chen,
Jierong Wang,
Amalya C. Johnson,
Amy S. McKeown-Green,
Helen J. Zeng,
T. Kien Mac,
Tuan Trinh,
Tony F. Heinz,
Eric Pop,
Fang Liu
Abstract:
Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free appr…
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Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free approach to exfoliate a variety of bulk van der Waals (vdW) crystals into nanoribbons. Akin to the Scotch tape exfoliation in producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, ReS2, and hBN. The nanoribbons are single-crystalline, parallel-aligned, flat, and have high aspect ratio. We demonstrated the electrical, magnetic, and optical properties from the confinement, strain, and edge configurations of these nanoribbons. This versatile preparation technique will pave the way for future experimental investigation and broad applications in optoelectronic, sensing, electronic and quantum devices.
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Submitted 17 February, 2024;
originally announced February 2024.
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DPA-2: Towards a universal large atomic model for molecular and material simulation
Authors:
Duo Zhang,
Xinzijian Liu,
Xiangyu Zhang,
Chengqian Zhang,
Chun Cai,
Hangrui Bi,
Yiming Du,
Xuejian Qin,
Jiameng Huang,
Bowen Li,
Yifan Shan,
Jinzhe Zeng,
Yuzhi Zhang,
Siyuan Liu,
Yifan Li,
Junhan Chang,
Xinyan Wang,
Shuo Zhou,
Jianchuan Liu,
Xiaoshan Luo,
Zhenyu Wang,
Wanrun Jiang,
Jing Wu,
Yudi Yang,
Jiyuan Yang
, et al. (17 additional authors not shown)
Abstract:
The rapid development of artificial intelligence (AI) is driving significant changes in the field of atomic modeling, simulation, and design. AI-based potential energy models have been successfully used to perform large-scale and long-time simulations with the accuracy of ab initio electronic structure methods. However, the model generation process still hinders applications at scale. We envision…
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The rapid development of artificial intelligence (AI) is driving significant changes in the field of atomic modeling, simulation, and design. AI-based potential energy models have been successfully used to perform large-scale and long-time simulations with the accuracy of ab initio electronic structure methods. However, the model generation process still hinders applications at scale. We envision that the next stage would be a model-centric ecosystem, in which a large atomic model (LAM), pre-trained with as many atomic datasets as possible and can be efficiently fine-tuned and distilled to downstream tasks, would serve the new infrastructure of the field of molecular modeling. We propose DPA-2, a novel architecture for a LAM, and develop a comprehensive pipeline for model fine-tuning, distillation, and application, associated with automatic workflows. We show that DPA-2 can accurately represent a diverse range of chemical systems and materials, enabling high-quality simulations and predictions with significantly reduced efforts compared to traditional methods. Our approach paves the way for a universal large atomic model that can be widely applied in molecular and material simulation research, opening new opportunities for scientific discoveries and industrial applications.
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Submitted 24 December, 2023;
originally announced December 2023.
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Millimeter-scale exfoliation of hBN with tunable flake thickness
Authors:
Amy S. McKeown-Green,
Helen J. Zeng,
Ashley P. Saunders,
Jiayi Li,
Jenny Hu,
Jiaojian Shi,
Yuejun Shen,
Feng Pan,
Jennifer A. Dionne,
Tony F. Heinz,
Stephen Wu,
Fan Zheng,
Fang Liu
Abstract:
As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-fi…
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As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-film exfoliation method to prepare hBN flakes with millimeter-scale dimension, near-unity yields, and tunable flake thickness distribution from 1-7 layers, a substantial improvement over scotch tape exfoliation. The single crystallinity and high quality of the exfoliated hBN are demonstrated with optical microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation. We further explore a possible mechanism for the effectiveness and selectivity based on thin-film residual stress measurements, density functional theory calculations, and transmission electron microscopy imaging of the deposited metal films. We find that the magnitude of the residual tensile stress induced by thin film deposition plays a key role in determining exfoliated flake thickness in a manner which closely resembles 3D semiconductor spalling. Lastly, we demonstrate that our exfoliated, large-area hBN flakes can be readily incorporated as encapsulating layers for other 2D monolayers. Altogether, this method brings us one step closer to the high throughput, mass production of hBN-based 2D photonic, optoelectronic, and quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
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Thermal Conductivity Measurement Using Modulated Photothermal Radiometry for Nitrate and Chloride Molten Salts
Authors:
Ka Man Chung,
Tianshi Feng,
Jian Zeng,
Sarath Reddy Adapa,
Xintong Zhang,
Andrew Z. Zhao,
Ye Zhang,
Peiwen Li,
Youyang Zhao,
Javier E. Garay,
Renkun Chen
Abstract:
Molten salts are being used or explored for thermal energy storage and conversion systems in concentrating solar power and nuclear power plants. Thermal conductivity of molten salts is an important thermophysical property dictating the performance and cost of these systems, but its accurate measurement has been challenging, as evidenced by wide scattering of existing data in literature. The corros…
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Molten salts are being used or explored for thermal energy storage and conversion systems in concentrating solar power and nuclear power plants. Thermal conductivity of molten salts is an important thermophysical property dictating the performance and cost of these systems, but its accurate measurement has been challenging, as evidenced by wide scattering of existing data in literature. The corrosive and conducting nature of these fluids also leads to time consuming sample preparation processes of many contact-based measurements. Here, we report the measurement of thermal conductivity of molten salts using a modulated photothermal radiometry (MPR) technique, which is a laser-based, non-contact, frequency-domain method adopted for molten salts for the first time. By unitizing the advantages of front side sensing of frequency-domain measurements and the vertical holder orientation, the technique can minimize the natural convection and salt creeping effects, thus yielding accurate molten salt thermal conductivity. The MPR technique is first calibrated using standard molten materials including paraffin wax and sulfur. It is then applied on measuring pure nitrate salts ($NaNO_3$ and $KNO_3$), solar salt ($NaNO_3-KNO_3$ mixture), and chloride salt ($NaCl-KCl-MgCl_2$). The measurement results are compared with data from literature, especially those obtained from laser flash analysis (LFA). Our results demonstrate that the MPR is a convenient and reliable technique of measuring thermal conductivity of molten salts. Accurate thermal conductivity data of molten salts will be valuable in developing the next-generation high-temperature thermal energy storage and conversion systems.
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Submitted 31 August, 2023;
originally announced September 2023.
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In-situ Thermophysical Measurement of Flowing Molten Chloride Salt Using Modulated Photothermal Radiometry
Authors:
Ka Man Chung,
Ye Zhang,
Jian Zeng,
Fouad Haddad,
Sarath Reddy Adapa,
Tianshi Feng,
Peiwen Li,
Renkun Chen
Abstract:
Molten salts are a leading candidate for high-temperature heat transfer fluids (HTFs) for thermal energy storage and conversion systems in concentrated solar power (CSP) and nuclear energy power plants. The ability to probe molten salt thermal transport properties in both stationary and flowing status is important for the evaluation of their heat transfer performance under realistic operational co…
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Molten salts are a leading candidate for high-temperature heat transfer fluids (HTFs) for thermal energy storage and conversion systems in concentrated solar power (CSP) and nuclear energy power plants. The ability to probe molten salt thermal transport properties in both stationary and flowing status is important for the evaluation of their heat transfer performance under realistic operational conditions, including the temperature range and potential degradation due to corrosion and contamination. However, accurate thermal transport properties are usually challenging to obtain even for stagnant molten salts due to different sources of errors from convection, radiation, and corrosion, let alone flowing ones. To the best of authors' knowledge, there is no available in-situ technique for measuring flowing molten salt thermal conductivity. Here, we report the first in-situ flowing molten salt thermal conductivity measurement using modulated photothermal radiometry (MPR). We could successfully perform the first in-situ thermal conductivity measurement of flowing molten $NaCl-KCl-MgCl_2$ in the typical operating temperature (520 and 580 $^oC$) with flow velocities ranging from around 0.3 to 1.0 $m$$s^-1$. The relative change of the molten salt thermal conductivity was measured. Gnielinski's correlation was also used to estimate the heat transfer coefficient h of the flowing $NaCl-KCl-MgCl_2$ in the given experimental condition. The work showed the potential of the MPR technique serving as an in-situ diagnostics tool to evaluate the heat transfer performance of flowing molten salts and other high-temperature HTFs.
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Submitted 31 August, 2023;
originally announced September 2023.
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Berry-Curvature Engineering for Nonreciprocal Directional Dichroism in Two-Dimensional Antiferromagnets
Authors:
Wenhao Liang,
Junjie Zeng,
Zhenhua Qiao,
Yang Gao,
Qian Niu
Abstract:
In two-dimensional antiferromagnets, we identify the mixed Berry curvature as the geometrical origin of the nonreciprocal directional dichroism (NDD), which refers to the difference in light absorption with the propagation direction flipped. Such a Berry curvature is strongly tied to the uniaxial strain in accordance with the symmetry constraint, leading to a highly tunable NDD, whose sign and mag…
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In two-dimensional antiferromagnets, we identify the mixed Berry curvature as the geometrical origin of the nonreciprocal directional dichroism (NDD), which refers to the difference in light absorption with the propagation direction flipped. Such a Berry curvature is strongly tied to the uniaxial strain in accordance with the symmetry constraint, leading to a highly tunable NDD, whose sign and magnitude can be manipulated via the strain direction. As a concrete example, we demonstrate such a phenomenon in a lattice model of MnBi2Te4. The coupling between the mixed Berry curvature and strain also suggests the magnetic quadrupole of the Bloch wave packet as the macroscopic order parameter probed by the NDD in two dimensions, distinct from the multiferroic order P times M or the spin toroidal and quadrupole order within a unit cell in previous studies. Our work paves the way of the Berry-curvature engineering for optical nonreciprocity in two-dimensional antiferromagnets.
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Submitted 5 June, 2023;
originally announced June 2023.
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Spin-Triplet Topological Excitonic Insulators in Two-dimensional Materials
Authors:
Huaiyuan Yang,
Jiaxi Zeng,
Yuelin Shao,
Yuanfeng Xu,
Xi Dai,
Xin-Zheng Li
Abstract:
Quantum spin-hall insulator (QSHI) processes nontrivial topology. We notice that the electronic structures of some particular QSHIs are favorable for realization of excitonic insulators (EIs). Using first-principles many-body perturbation theory ($GW$+BSE) and $k \cdot p$ model, we show that high-temperature ($T$) topological EIs with unlike spin can exist in such QSHIs with non-vanishing band gap…
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Quantum spin-hall insulator (QSHI) processes nontrivial topology. We notice that the electronic structures of some particular QSHIs are favorable for realization of excitonic insulators (EIs). Using first-principles many-body perturbation theory ($GW$+BSE) and $k \cdot p$ model, we show that high-temperature ($T$) topological EIs with unlike spin can exist in such QSHIs with non-vanishing band gaps, e.g. 2D AsO and $\text{Mo}_2\text{Ti}\text{C}_2\text{O}_2$. Spin-triplet type EI phase induced by strong electron-hole interaction preserves time-reversal symmetry and the topological characteristics. A novel optical selection rule exists, upon going through the phase transition from the normal QSHIs to the topological EIs, absorption spectroscopy shows pronounced $T$-dependent changes, providing guidance for future experimental detections. The demonstrated coupling between EIs and topology also means that rich physics exists in such materials which retain such interdisciplinary features.
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Submitted 2 April, 2023;
originally announced April 2023.
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Chiral-Flux-Phase-Based Topological Superconductivity in Kagome Systems with Mixed Edge Chiralities
Authors:
Junjie Zeng,
Qingming Li,
Xun Yang,
Dong-Hui Xu,
Rui Wang
Abstract:
Recent studies have attracted intense attention on the quasi-2D kagome superconductors $ A\text{V}_3\text{Sb}_5 $ ($ A = $ K, Rb, and Cs) where the unexpected chiral flux phase (CFP) associates with the spontaneous time-reversal symmetry breaking in charge density wave (CDW) states. Here, commencing from the 2-by-2 CDW phases, we bridge the gap between topological superconductivity (TSC) and time-…
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Recent studies have attracted intense attention on the quasi-2D kagome superconductors $ A\text{V}_3\text{Sb}_5 $ ($ A = $ K, Rb, and Cs) where the unexpected chiral flux phase (CFP) associates with the spontaneous time-reversal symmetry breaking in charge density wave (CDW) states. Here, commencing from the 2-by-2 CDW phases, we bridge the gap between topological superconductivity (TSC) and time-reversal asymmetric CFP in kagome systems. Several chiral TSC states featuring distinct Chern numbers emerge for an s-wave or a d-wave superconducting pairing symmetry. Importantly, these CFP-based TSC phases possess unique gapless edge modes with mixed chiralities (i.e., both positive and negative chiralities), but with the net chiralities consistent with the Bogoliubov-de Gennes Chern numbers. We further study the transport properties of a two-terminal junction, using Chern insulator or normal metal leads via atomic Green's function method with Landauer-Büttiker formalism. In both cases, the normal electron tunneling and the crossed Andreev reflection oscillate as the chemical potential changes, but together contribute to plateau transmissions (1 and 3/2, respectively). These behaviors can be regarded as the signature of a topological superconductor hosting edge states with mixed chiralities.
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Submitted 30 March, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
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Drastic enhancement of the superconducting temperature in type-II Weyl semimetal candidate MoTe$_2$ via biaxial strain
Authors:
King Yau Yip,
Siu Tung Lam,
Kai Ham Yu,
Wing Shing Chow,
Jiayu Zeng,
Kwing To Lai,
Swee K. Goh
Abstract:
Type-II Weyl semimetal candidate MoTe$_2$, which superconducts at T_c~0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low $T_c$ is associated with a small upper critical field ($H_{c2}$), implying a fragile superconducting phase that only exists on a small region of the $H$-$T$ phase diagram. Here, we describe a simple and versatile a…
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Type-II Weyl semimetal candidate MoTe$_2$, which superconducts at T_c~0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low $T_c$ is associated with a small upper critical field ($H_{c2}$), implying a fragile superconducting phase that only exists on a small region of the $H$-$T$ phase diagram. Here, we describe a simple and versatile approach based on the differential thermal expansion between dissimilar materials to subject a thin single crystalline MoTe$_2$ to biaxial strain. With this approach, we successfully enhance the $T_c$ of MoTe$_2$ five-fold and consequently expand the superconducting region on the $H$-$T$ phase diagram significantly. To demonstrate the relative ease of studying the superconductivity in the biaxially strained MoTe$_2$, we further present the magnetotransport data, enabling the study of the temperature-dependent $H_{c2}$ and the anisotropy of the superconducting state which would otherwise be difficult to obtain in a free-standing MoTe$_2$. Our work shows that biaxial strain is an effective knob to tune the electronic properties of MoTe$_2$. Due to the simplicity of our methodology to apply biaxial strain, we anticipate its direct applicability to a wider class of quantum materials.
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Submitted 7 February, 2023; v1 submitted 6 February, 2023;
originally announced February 2023.
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Analysis of Transition Path Ensemble in the Exactly Solvable Models via Overdamped Langevin Equation
Authors:
De-Zhang Li,
Jia-Rui Zeng,
Wei-Jie Huang,
Yao Yao,
Xiao-Bao Yang
Abstract:
Transition of a system between two states is an important but difficult problem in natural science. In this article we study the transition problem in the framework of transition path ensemble. Using the overdamped Langevin method, we introduce the path integral formulation of the transition probability and obtain the equation for the minimum action path in the transition path space. For the effec…
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Transition of a system between two states is an important but difficult problem in natural science. In this article we study the transition problem in the framework of transition path ensemble. Using the overdamped Langevin method, we introduce the path integral formulation of the transition probability and obtain the equation for the minimum action path in the transition path space. For the effective sampling in the transition path ensemble, we derive a conditional overdamped Langevin equation. In two exactly solvable models, the free particle system and the harmonic system, we present the expression of the conditional probability density and the explicit solutions for the conditional Langevin equation and the minimum action path. The analytic results demonstrate the consistence of the conditional Langevin equation with the desired probability distribution in the transition. It is confirmed that the conditional Langevin equation is an effective tool to sample the transition path ensemble, and the minimum action principle actually leads to the most probable path.
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Submitted 5 December, 2022;
originally announced December 2022.
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Emergent Mott-insulators at non-integer fillings and devil's staircase induced by attractive interaction in many-body polarons
Authors:
Jian-Hua Zeng,
Su Yi,
Liang He
Abstract:
We investigate the ground state properties of an ultracold atom system consisting of many-body polarons, quasiparticles formed by impurity atoms in optical lattices immersing in a Bose-Einstein condensate. We find the nearest-neighbor attractive interaction between polarons can give rise to rich physics that is peculiar to this system. In a relatively shallow optical lattice, the attractive intera…
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We investigate the ground state properties of an ultracold atom system consisting of many-body polarons, quasiparticles formed by impurity atoms in optical lattices immersing in a Bose-Einstein condensate. We find the nearest-neighbor attractive interaction between polarons can give rise to rich physics that is peculiar to this system. In a relatively shallow optical lattice, the attractive interaction can drive the system being in a self-bound superfluid phase with its particle density distribution manifesting a self-concentrated structure. While in a relatively deep optical lattice, the attractive interaction can drive the system forming the Mott-insulator phase even though the global filling factor is not integer. Interestingly, in the Mott-insulator regime, the system can support a series of different Mott-insulators with their effective density manifesting a devil's staircase structure with respect to the strength of attractive interaction. Detailed estimation on relevant experimental parameters shows that these rich physics can be readily observed in current experimental setups.
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Submitted 18 April, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number
Authors:
Fangyang Zhan,
Junjie Zeng,
Zhuo Chen,
Xin Jin,
Jing Fan,
Tingyong Chen,
Rui Wang
Abstract:
Numerous attempts have been made so far to explore the quantum anomalous Hall effect (QAHE), but the ultralow observed temperature strongly hinders its practical applications. Hence, it is of great interest to go beyond the existing paradigm of QAHE. Here, we propose that Floquet engineering offers a strategy to realize the QAHE via hybridization of Floquet-Bloch bands. Based on first-principles c…
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Numerous attempts have been made so far to explore the quantum anomalous Hall effect (QAHE), but the ultralow observed temperature strongly hinders its practical applications. Hence, it is of great interest to go beyond the existing paradigm of QAHE. Here, we propose that Floquet engineering offers a strategy to realize the QAHE via hybridization of Floquet-Bloch bands. Based on first-principles calculations and Floquet theorem, we unveil that nonequilibrium valley-polarized QAHE (VP-QAHE), independent of magnetic orders, is widely present in ferromagnetic and nonmagnetic members of two-dimensional family materials $M$Si$_2$$Z_4$ ($M$ = Mo, W, V; $Z$ = N, P, As) by irradiating circularly polarized light (CPL). Remarkably, by tuning the frequency, intensity, and handedness of incident CPL, the Chern number of VP-QAHE is highly tunable and up to $\mathcal{C}=\pm 4$. We reveal that such Chern number tunable VP-QAHE attributes to light-induced trigonal warping and multiple band inversion at different valleys. The valley-resolved chiral edge states and quantized plateau of Hall conductance, which facilitates the experimental measurement, are visible inside the global band gap. Our work not only establishes Floquet Engineering of nonequilibrium VP-QAHE with tunable Chern number in realistic materials, but also provides a promising avenue to explore emergent topological phases under light irradiation.
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Submitted 25 September, 2022; v1 submitted 20 September, 2022;
originally announced September 2022.
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Layer Zero-Line Modes in Antiferromagnetic Topological Insulators
Authors:
Wenhao Liang,
Tao Hou,
Junjie Zeng,
Zheng Liu,
Yulei Han,
Zhenhua Qiao
Abstract:
Recently, the magnetic domain walls have been experimentally observed in antiferromagnetic topological insulators MnBi$_2$Te$_4$, where we find that the topological zero-line modes (ZLMs) appear along the domain walls. Here, we theoretically demonstrate that these ZLMs are layer-dependent in MnBi$_2$Te$_4$ multilayers. For domain walls with out-of-plane ferromagnetism, we find that ZLMs are equall…
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Recently, the magnetic domain walls have been experimentally observed in antiferromagnetic topological insulators MnBi$_2$Te$_4$, where we find that the topological zero-line modes (ZLMs) appear along the domain walls. Here, we theoretically demonstrate that these ZLMs are layer-dependent in MnBi$_2$Te$_4$ multilayers. For domain walls with out-of-plane ferromagnetism, we find that ZLMs are equally distributed in the odd-number layers. When domain walls possess in-plane magnetization, the ZLMs can also exist in even-number layers due to in-plane mirror-symmetry breaking. Moreover, the conductive channels are mainly distributed in the outermost layers with increasing layer thickness. Our findings lay out a strategy in manipulating ZLMs and also can be utilized to distinguish the corresponding magnetic structures.
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Submitted 20 July, 2022;
originally announced July 2022.
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Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate
Authors:
Shimin Cao,
Mantang Chen,
Jiang Zeng,
Ning Ma,
Runjie Zheng,
Ya Feng,
Shili Yan,
Jing Liu,
Kenji Watanabe,
Takashi Taniguchi,
X. C. Xie,
Jian-Hao Chen
Abstract:
Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moiré superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moiré patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the su…
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Strong band engineering in two-dimensional (2D) materials can be achieved by introducing moiré superlattices, leading to the emergence of various novel quantum phases with promising potential for future applications. Presented works to create moiré patterns have been focused on a twist embedded inside channel materials or between channel and substrate. However, the effects of a twist inside the substrate materials on the unaligned channel materials are much less explored. In this work, we report the realization of superlattice multi-Dirac cones with the coexistence of the main Dirac cone in a monolayer graphene (MLG) on a ~0.14° twisted double-layer boron nitride (tBN) substrate. Transport measurements reveal the emergence of three pairs of superlattice Dirac points around the pristine Dirac cone, featuring multiple metallic or insulating states surrounding the charge neutrality point (CNP). Displacement field tunable and electron-hole asymmetric Fermi velocities are indicated from temperature dependent measurements, along with the gapless dispersion of superlattice Dirac cones. The experimental observation of multiple Dirac cones in MLG/tBN heterostructure is supported by band structure calculations employing periodic moiré potential. Our results unveil the potential of using twisted substrate as a universal band engineering technique for 2D materials regardless of lattice matching and crystal orientations, which might pave the way for a new branch of twistronics.
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Submitted 17 November, 2022; v1 submitted 22 June, 2022;
originally announced June 2022.
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Multi-scale time-resolved electron diffraction: A case study in moiré materials
Authors:
C. J. R. Duncan,
M. Kaemingk,
W. H. Li,
M. B. Andorf,
A. C. Bartnik,
A. Galdi,
M. Gordon,
C. A. Pennington,
I. V. Bazarov,
H. J. Zeng,
F. Liu,
D. Luo,
A. Sood,
A. M. Lindenberg,
M. W. Tate,
D. A. Muller,
J. Thom-Levy,
S. M. Gruner,
J. M. Maxson
Abstract:
Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We dep…
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Ultrafast-optical-pump -- structural-probe measurements, including ultrafast electron and x-ray scattering, provide direct experimental access to the fundamental timescales of atomic motion, and are thus foundational techniques for studying matter out of equilibrium. High-performance detectors are needed in scattering experiments to obtain maximum scientific value from every probe particle. We deploy a hybrid pixel array direct electron detector to perform ultrafast electron diffraction experiments on a WSe$_2$/MoSe$_2$ 2D heterobilayer, resolving the weak features of diffuse scattering and moiré superlattice structure without saturating the zero order peak. Enabled by the detector's high frame rate, we show that a chopping technique provides diffraction difference images with signal-to-noise at the shot noise limit. Finally, we demonstrate that a fast detector frame rate coupled with a high repetition rate probe can provide continuous time resolution from femtoseconds to seconds, enabling us to perform a scanning ultrafast electron diffraction experiment that maps thermal transport in WSe$_2$/MoSe$_2$ and resolves distinct diffusion mechanisms in space and time.
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Submitted 27 July, 2023; v1 submitted 16 June, 2022;
originally announced June 2022.
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Topological Corner States in Graphene by Bulk and Edge Engineering
Authors:
Junjie Zeng,
Chen Chen,
Yafei Ren,
Zheng Liu,
Wei Ren,
Zhenhua Qiao
Abstract:
Two-dimensional higher-order topology is usually studied in (nearly) particle-hole symmetric models, so that an edge gap can be opened within the bulk one. But more often deviates the edge anticrossing even into the bulk, where corner states are difficult to pinpoint. We address this problem in a graphene-based $\mathbb{Z}_2$ topological insulator with spin-orbit coupling and in-plane magnetizatio…
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Two-dimensional higher-order topology is usually studied in (nearly) particle-hole symmetric models, so that an edge gap can be opened within the bulk one. But more often deviates the edge anticrossing even into the bulk, where corner states are difficult to pinpoint. We address this problem in a graphene-based $\mathbb{Z}_2$ topological insulator with spin-orbit coupling and in-plane magnetization both originating from substrates through a Slater-Koster multi-orbital model. The gapless helical edge modes cross inside the bulk, where is also located the magnetization-induced edge gap. After demonstrating its second-order nontriviality in bulk topology by a series of evidence, we show that a difference in bulk-edge onsite energy can adiabatically tune the position of the crossing/anticrossing of the edge modes to be inside the bulk gap. This can help unambiguously identify two pairs of topological corner states with nonvanishing energy degeneracy for a rhombic flake. We further find that the obtuse-angle pair is more stable than the acute-angle one. These results not only suggest an accessible way to "find" topological corner states, but also provide a higher-order topological version of "bulk-boundary correspondence".
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Submitted 31 March, 2022; v1 submitted 6 February, 2022;
originally announced February 2022.
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Mixed displacement-pressure-phase field framework for finite strain fracture of nearly incompressible hyperelastic materials
Authors:
Fucheng Tian,
Jun Zeng,
Mengnan Zhang,
Liangbin Li
Abstract:
The favored phase field method (PFM) has encountered challenges in the finite strain fracture modeling of nearly or truly incompressible hyperelastic materials. We identified that the underlying cause lies in the innate contradiction between incompressibility and smeared crack opening. Drawing on the stiffness-degradation idea in PFM, we resolved this contradiction through loosening incompressible…
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The favored phase field method (PFM) has encountered challenges in the finite strain fracture modeling of nearly or truly incompressible hyperelastic materials. We identified that the underlying cause lies in the innate contradiction between incompressibility and smeared crack opening. Drawing on the stiffness-degradation idea in PFM, we resolved this contradiction through loosening incompressible constraint of the damaged phase without affecting the incompressibility of intact material. By modifying the perturbed Lagrangian approach, we derived a novel mixed formulation. In numerical aspects, the finite element discretization uses the classical Q1/P0 and high-order P2/P1 schemes, respectively. To ease the mesh distortion at large strains, an adaptive mesh deletion technology is also developed. The validity and robustness of the proposed mixed framework are corroborated by four representative numerical examples. By comparing the performance of Q1/P0 and P2/P1, we conclude that the Q1/P0 formulation is a better choice for finite strain fracture in nearly incompressible cases. Moreover, the numerical examples also show that the combination of the proposed framework and methodology has vast potential in simulating complex peeling and tearing problems
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Submitted 1 December, 2021;
originally announced December 2021.
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One-dimensional purely Lee-Huang-Yang fluids dominated by quantum fluctuations in two-component Bose-Einstein condensates
Authors:
Xiuye Liu,
Jianhua Zeng
Abstract:
Lee-Huang-Yang (LHY) fluids are an exotic quantum matter dominated purely by quantum fluctuations. Recently, the three-dimensional LHY fluids were observed in ultracold atoms experiments, while their low-dimensional counterparts have not been well known. Herein, based on the Gross-Pitaevskii equation of one-dimensional LHY quantum fluids in two-component Bose-Einstein condensates, we reveal analyt…
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Lee-Huang-Yang (LHY) fluids are an exotic quantum matter dominated purely by quantum fluctuations. Recently, the three-dimensional LHY fluids were observed in ultracold atoms experiments, while their low-dimensional counterparts have not been well known. Herein, based on the Gross-Pitaevskii equation of one-dimensional LHY quantum fluids in two-component Bose-Einstein condensates, we reveal analytically and numerically the formation, properties, and dynamics of matter-wave structures therein. Considering a harmonic trap, approximate analytical results are obtained based on variational approximation, and higher-order nonlinear localized modes with nonzero nodes are constructed numerically. Stability regions of all the LHY nonlinear localized modes are identified by linear-stability analysis and direct perturbed numerical simulations. Movements and oscillations of single localized mode, and collisions between two modes, under the influence of different initial kicks are also studied in dynamical evolutions. The predicted results are available to quantum-gas experiments, providing a new insight into LHY physics in low-dimensional settings.
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Submitted 26 May, 2022; v1 submitted 12 September, 2021;
originally announced September 2021.
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Multi-orbital model reveals second-order topological insulator in 1H-transition metal dichalcogenide
Authors:
Jiang Zeng,
Haiwen Liu,
Hua Jiang,
Qing-Feng Sun,
X. C. Xie
Abstract:
Recently, a new class of second-order topological insulators (SOTIs) characterized by an electronic dipole has been theoretically introduced and proposed to host topological corner states. As a novel topological state, it has been attracting great interest and experimentally realized in artificial systems of various fields of physics based on multi-sublattice models, e.g., breathing kagome lattice…
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Recently, a new class of second-order topological insulators (SOTIs) characterized by an electronic dipole has been theoretically introduced and proposed to host topological corner states. As a novel topological state, it has been attracting great interest and experimentally realized in artificial systems of various fields of physics based on multi-sublattice models, e.g., breathing kagome lattice. In order to realize such kind of SOTI in natural materials, we proposed a symmetry-faithful multi-orbital model. Then, we reveal several familiar transition metal dichalcogenide (TMD) monolayers as a material family of two-dimensional SOTI with large bulk gaps. The topologically protected corner state with fractional charge is pinned at Fermi level due to the charge neutrality and filling anomaly. Additionally, we propose that the zero-energy corner state preserves in the heterostructure composed of a topological nontrivial flake embedded in a trivial material. The novel second-order corner states in familiar TMD materials hold promise for revealing unexpected quantum properties and applications.
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Submitted 29 August, 2021;
originally announced August 2021.
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Thermal Conductivity Modeling of Monodispersed Microspheres using Discrete Element Method
Authors:
Jian Zeng,
Ka Man Chung,
Xintong Zhang,
Sarath Adapa,
Tianshi Feng,
Yu Pei,
Renkun Chen
Abstract:
Particle beds are widely used in various systems and processes, such as particle heat exchangers, granular flow reactors, and additive manufacturing. Accurate modeling of thermal conductivity of particle beds and understanding of their heat transfer mechanisms are important. However, previous models were based on a simple cubic packing of particles which could not accurately represent the actual h…
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Particle beds are widely used in various systems and processes, such as particle heat exchangers, granular flow reactors, and additive manufacturing. Accurate modeling of thermal conductivity of particle beds and understanding of their heat transfer mechanisms are important. However, previous models were based on a simple cubic packing of particles which could not accurately represent the actual heat transfer processes under certain conditions. Here, we examine the effect of the packing structure on thermal conductivity of particle beds. We use monodispersed silica microspheres with average article sizes ranging from 23 to 330 um as a model material. We employ a transient hot-wire technique to measure the thermal conductivity of the particle beds with packing density of 43 to 57% within a temperature range of room temperature to 500 deg. C and under N2 gaseous pressures of 20 to 760 Torr. We then use a discrete element method (DEM) to obtain the realistic packing structure of the particles, which is then fed into a finite-element model (FEM) to calculate the thermal conductivity, with the consideration of solid conduction, gas conduction, and radiation heat transfer. Our results show that the thermal conductivity model based on the more realistic random packing structure derived from the DEM shows better agreement with the experimental data compared to that based on the simple cubic packing structure. The combined DEM and FEM methodology can serve as a useful tool to predict effective thermal conductivity of particle beds and to quantify different heat transfer mechanisms under various conditions.
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Submitted 15 September, 2021; v1 submitted 17 June, 2021;
originally announced June 2021.
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Temperature-sensitive spatial distribution of defects in PdSe2 flakes
Authors:
Xiaowei Liu,
Yaojia Wang,
Qiqi Guo,
Shijun Liang,
Tao Xu,
Bo Liu,
Jiabin Qiao,
Shengqiang Lai,
Junwen Zeng,
Song Hao,
Chenyi Gu,
Tianjun Cao,
Chenyu Wang,
Yu Wang,
Chen Pan,
Guangxu Su,
Yuefeng Nie,
Xiangang Wan,
Litao Sun,
Zhenlin Wang,
Lin He,
Bin Cheng,
Feng Miao
Abstract:
Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microsco…
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Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in PdSe2 thin flakes through scanning tunneling microscopy (STM). We observe that the spatial distribution of Se vacancies in PdSe2 flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on PdSe2 thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in PdSe2 thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up a new avenue to tailor the physical properties of materials and explore new device functionalities.
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Submitted 14 April, 2021;
originally announced April 2021.
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Degradiation of $β$-Ga$_2$O$_3$ Schottky barrier diode under swift heavy ion irradiation
Authors:
Wen-Si Ai,
Jie Liu,
Qian Feng,
Peng-Fei Zhai,
Pei-Pei Hu,
Jian Zeng,
Sheng-Xia Zhang,
Zong-Zhen Li,
Li Liu,
Xiao-Yu Yan,
You-Mei Sun
Abstract:
The electrical characteristics and microstructures of $β$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $β$-Ga$_2$O$_3$ SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n and the reverse leakage current density Jr. In additio…
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The electrical characteristics and microstructures of $β$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $β$-Ga$_2$O$_3$ SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5*106 - 1.3*107 cm-1. Latent tracks induced by swift heavy ions were observed visually in the whole $β$-Ga$_2$O$_3$ matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. By comparing the carrier removal rates, the $β$-Ga$_2$O$_3$ SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
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Submitted 24 March, 2021;
originally announced March 2021.
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Measurement of High-temperature Thermophysical Properties of Bulk and Coatings Using Modulated Photothermal Radiometry
Authors:
Jian Zeng,
Ka Man Chung,
Qingyang Wang,
Xiaoxin Wang,
Yu Pei,
Peiwen Li,
Renkun Chen
Abstract:
This paper presents the development of instrumentation for the measurement of high-temperature thermal conductivity of bulk and coatings using a modulated photothermal radiometry (MPR) method, where a sample is heated by an intensity-modulated laser to probe into different layers of the sample. While MPR has been previously established, most of the previous studies only focus on the measurement at…
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This paper presents the development of instrumentation for the measurement of high-temperature thermal conductivity of bulk and coatings using a modulated photothermal radiometry (MPR) method, where a sample is heated by an intensity-modulated laser to probe into different layers of the sample. While MPR has been previously established, most of the previous studies only focus on the measurement at room temperature. The MPR has not been well studied for measurements of bulk and coating materials at high temperatures, which are increasingly important for a multitude of applications, such as materials used in the concentrating solar power (CSP) plants and the nuclear reactors. MPR is a non-contact technique that utilizes the intrinsic thermal emission from the specimens for thermometry, which is favorable for measurements at high temperatures in harsh environment. The authors designed and utilized a sample holder suitable for high temperature measurement up to 973 K with good temperature uniformity within the sample. The high-temperature MPR setup was validated by measuring bulk materials with known thermal conductivity. The setup and technique were then extended to the measurement of black solar-absorbing coatings of 10 to 50 μm thick on various substrates by modulating the frequency of the laser heating beam and the thermal penetration depth. The studies showed that thermal conductivities of typical solar-absorbing coatings are 0.4 ~ 0.8 W m-1 K-1, indicating a possibly large temperature drop within the coating under high solar irradiation flux, such as over 1000-sun for central solar towers in CSP plants.
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Submitted 20 November, 2020; v1 submitted 30 August, 2020;
originally announced August 2020.
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Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films
Authors:
F. L. Zeng,
Z. Y. Ren,
Y. Li,
J. Y. Zeng,
M. W. Jia,
J. Miao,
A. Hoffmann,
W. Zhang,
Y. Z. Wu,
Z. Yuan
Abstract:
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away f…
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Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.
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Submitted 3 August, 2020;
originally announced August 2020.
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Valley-selective Floquet Chern Flat Bands in Twisted Multilayer Graphene
Authors:
Ming Lu,
Jiang Zeng,
Haiwen Liu,
Jin-Hua Gao,
X. C. Xie
Abstract:
We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moiré flat bands, and hence opens new opportunities to study…
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We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moiré flat bands, and hence opens new opportunities to study the valleytronics of morié flat band systems. We thus expect that many of the valley-related properties of TMG, e.g. orbital ferromagnetism, can be switched by CPL with proper doping. We reveal a Chern number hierarchy rule for the Floquet flat bands in a generic (M+N)-layer TMG. We also illustrate that the CPL effects on TMG strongly rely on the stacking chirality, which is an unique feature of TMG. All these phenomena could be tested in the twisted double bilayer graphene systems, which is the simplest example of TMG and has already been realized in experiment.
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Submitted 18 May, 2021; v1 submitted 30 July, 2020;
originally announced July 2020.
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Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-Superconducting Quantum Interference Device
Authors:
Lei Chen,
Lili Wu,
Yue Wang,
Yinping Pan,
Denghui Zhang,
Junwen Zeng,
Xiaoyu Liu,
Linxian Ma,
Wei Peng,
Yihua Wang,
Jie Ren,
Zhen Wang
Abstract:
Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bi-state hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we…
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Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bi-state hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a Three-Dimensional (3D) Nb nano-Superconducting QUantum Interference Device (nano-SQUID). The major cell area here fits within an 8*9 μm^2 rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighbouring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (~66%). Furthermore, the measured Current-Phase Relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modelling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterisation of 26 devices. We show that the CPR skewness range of π/4~3π/4 is equivalent to a large loop inductance in creating a stable bi-state hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.
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Submitted 22 July, 2020;
originally announced July 2020.
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Berry-Curvature Exchange Induced Anderson Localization in Large-Chern-Number Quantum Anomalous Hall Effect
Authors:
Hui Yang,
Junjie Zeng,
Yulei Han,
Zhenhua Qiao
Abstract:
We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when th…
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We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $\mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $\mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${\mathcal{C}}={\mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${\mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.
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Submitted 23 April, 2020;
originally announced April 2020.
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Realistic flat-band model based on degenerate $p$-orbitals in two-dimensional ionic materials
Authors:
Jiang Zeng,
Ming Lu,
Haiwen Liu,
Hua Jiang,
X. C. Xie
Abstract:
Though several theoretical models have been proposed to design electronic flat-bands, the definite experimental realization in two-dimensional atomic crystal is still lacking. Here we propose a novel and realistic flat-band model based on threefold degenerate $p$-orbitals in two-dimensional ionic materials. Our theoretical analysis and first-principles calculations show that the proposed flat-band…
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Though several theoretical models have been proposed to design electronic flat-bands, the definite experimental realization in two-dimensional atomic crystal is still lacking. Here we propose a novel and realistic flat-band model based on threefold degenerate $p$-orbitals in two-dimensional ionic materials. Our theoretical analysis and first-principles calculations show that the proposed flat-band can be realized in 1T layered materials of alkali-metal chalogenides and metal-carbon group compounds. Some of the former are theoretically predicted to be stable as layered materials (e.g., K$_2$S), and some of the latter have been experimentally fabricated in previous works (e.g., Gd$_2$CCl$_2$). More interestingly, the flat-band is partially filled in the heterostructure of a K$_2$S monolayer and graphene layers. The spin polarized nearly flat-band can be realized in the ferromagnetic state of a Gd$_2$CCl$_2$ monolayer, which has been fabricated in experiments. Our theoretical model together with the material predictions provide a realistic platform for the study of flat-bands and related exotic quantum phases.
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Submitted 2 February, 2021; v1 submitted 6 March, 2020;
originally announced March 2020.
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Mesoscopic Electronic Transport in Twisted Bilayer Graphene
Authors:
Yulei Han,
Yafei Ren,
Xinlong Dong,
Junjie Zeng,
Wei Ren,
Zhenhua Qiao
Abstract:
We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene leads to upper and lower graphene layers separately, we explore systematically the dependence of electronic transport on the twist angle, Fermi energy, system s…
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We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene leads to upper and lower graphene layers separately, we explore systematically the dependence of electronic transport on the twist angle, Fermi energy, system size, layer stacking order and twist axis. When choose different twist axes for either AA- or AB-stacked bilayer graphene, we find that the dependence of conductance on twist angle displays qualitatively distinction, i.e., the systems with "top" axis exhibit finite conductance oscillating as a function of the twist angle, while the ones with "hollow" axis exhibit nearly vanishing conductance for different twist angles or Fermi energies near the charge neutrality point. These findings suggest that the choice of twist axis can effectively tune the interlayer conductance, making it a crucial factor in designing of nanodevices with the twisted van der Waals multilayers.
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Submitted 17 November, 2019;
originally announced November 2019.
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Doping-dependent phonon anomaly and charge-order phenomena in the HgBa$_{2}$CuO$_{4+δ}$ and HgBa$_{2}$CaCu$_{2}$O$_{6+δ}$
Authors:
Lichen Wang,
Biqiong Yu,
Ran Jing,
Xiangpeng Luo,
Junbang Zeng,
Jiarui Li,
Izabela Bialo,
Martin Bluschke,
Yang Tang,
Jacob Freyermuth,
Guichuan Yu,
Ronny Sutarto,
Feizhou He,
Eugen Weschke,
Wojciech Tabis,
Martin Greven,
Yuan Li
Abstract:
Using resonant X-ray diffraction and Raman spectroscopy, we study charge correlations and lattice dynamics in two model cuprates, HgBa$_{2}$CuO$_{4+δ}$ and HgBa$_{2}$CaCu$_{2}$O$_{6+δ}$. We observe a maximum of the characteristic charge order temperature around the same hole concentration ($p \approx 0.09$) in both compounds, and concomitant pronounced anomalies in the lattice dynamics that involv…
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Using resonant X-ray diffraction and Raman spectroscopy, we study charge correlations and lattice dynamics in two model cuprates, HgBa$_{2}$CuO$_{4+δ}$ and HgBa$_{2}$CaCu$_{2}$O$_{6+δ}$. We observe a maximum of the characteristic charge order temperature around the same hole concentration ($p \approx 0.09$) in both compounds, and concomitant pronounced anomalies in the lattice dynamics that involve the motion of atoms in and/or adjacent to the CuO$_2$ layers. These anomalies are already present at room temperature, and therefore precede the formation of the static charge correlations, and we attribute them to an instability of the CuO$_2$ layers. Our finding implies that the charge order in the cuprates is an emergent phenomenon, driven by a fundamental variation in both lattice and electronic properties as a function of doping.
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Submitted 18 October, 2019;
originally announced October 2019.
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Self-trapped spatially localized states in combined linear-nonlinear periodic potentials
Authors:
Jincheng Shi,
Jianhua Zeng
Abstract:
We analyze the existence and stability of two kinds of self-trapped spatially localized gap modes, gap solitons and truncated nonlinear Bloch waves, in one-and two-dimensional optical or matter-wave media with self-focusing nonlinearity, supported by a combination of linear and nonlinear periodic lattice potentials. The former is found to be stable once placed inside a single well of the nonlinear…
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We analyze the existence and stability of two kinds of self-trapped spatially localized gap modes, gap solitons and truncated nonlinear Bloch waves, in one-and two-dimensional optical or matter-wave media with self-focusing nonlinearity, supported by a combination of linear and nonlinear periodic lattice potentials. The former is found to be stable once placed inside a single well of the nonlinear lattice, it is unstable otherwise. Contrary to the case with constant self-focusing nonlinearity, where the latter solution is always unstable, here, we demonstrate that it nevertheless can be stabilized by the nonlinear lattice since the model under consideration combines the unique properties of both the linear and nonlinear lattices. The practical possibilities for experimental realization of the predicted solutions are also discussed.
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Submitted 21 September, 2019;
originally announced September 2019.
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One-dimensional gap solitons in quintic and cubic-quintic Fractional nonlinear Schrödinger equations with a periodically modulated linear potential
Authors:
Liangwei Zeng,
Jianhua Zeng
Abstract:
Competing nonlinearities, such as the cubic (Kerr) and quintic nonlinear terms whose strengths are of opposite signs (the coefficients in front of the nonlinearities), exist in various physical media (in particular, in optical and matter-wave media). A benign competition between self-focusing cubic and self-defocusing quintic nonlinear nonlinearities (known as cubic-quintic model) plays an importa…
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Competing nonlinearities, such as the cubic (Kerr) and quintic nonlinear terms whose strengths are of opposite signs (the coefficients in front of the nonlinearities), exist in various physical media (in particular, in optical and matter-wave media). A benign competition between self-focusing cubic and self-defocusing quintic nonlinear nonlinearities (known as cubic-quintic model) plays an important role in creating and stabilizing the self-trapping of D-dimensional localized structures, in the contexts of standard nonlinear Schrödinger equation. We incorporate an external periodic potential (linear lattice) into this model and extend it to the space-fractional scenario that begins to surface in very recent years---the nonlinear fractional Schrödinger equation (NLFSE), therefore obtaining the cubic-quintic or the purely quintic NLFSE, and investigate the propagation and stability properties of self-trapped modes therein. Two types of one-dimensional localized gap modes are found, including the fundamental and dipole-mode gap solitons. Employing the techniques based on the linear-stability analysis and direct numerical simulations, we get the stability regions of all the localized modes; and particularly, the anti-Vakhitov-Kolokolov criterion applies for the stable portions of soliton families generated in the frameworks of quintic-only nonlinearity and competing cubic-quintic nonlinear terms.
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Submitted 21 September, 2019;
originally announced September 2019.
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Gaussian-like and flat-top solitons of atoms with spatially modulated repulsive interactions
Authors:
Liangwei Zeng,
Jianhua Zeng
Abstract:
Solitons, nonlinear particle-like excitations with inalterable properties (amplitude, shape, and velocity) as they propagate, are omnipresent in many branches of science---and in physics in particular. Flat-top solitons are a novel type of bright solitons that have not been well explored in pure nonlinear media. Here, a model of nonlinear Kerr (cubic) media of ultracold atoms with spatially modula…
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Solitons, nonlinear particle-like excitations with inalterable properties (amplitude, shape, and velocity) as they propagate, are omnipresent in many branches of science---and in physics in particular. Flat-top solitons are a novel type of bright solitons that have not been well explored in pure nonlinear media. Here, a model of nonlinear Kerr (cubic) media of ultracold atoms with spatially modulated repulsive interactions is proposed and shown to support a vast variety of stable flat-top matter-wave solitons, including one-dimensional (1D) flat-top fundamental and multipole solitons, two-dimensional (2D) flat-top fundamental and vortex solitons. We demonstrate that by varying the relevant physical parameters (nonlinearity coefficient and chemical potential) the ordinary bright (gaussian) solitons can transform into the novel flat-top solitons. The (in-)stability domains of the flat-top soliton families are checked by means of linear stability analysis and reconfirmed by direct numerical simulations. This model is generic in the contexts of nonlinear optics and Bose-Einstein condensates, which provide direct experimental access to observe the predicted solutions.
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Submitted 21 September, 2019;
originally announced September 2019.
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Asymmetric localized states in periodic potentials with a domain wall-like Kerr nonlinearity
Authors:
Jincheng Shi,
Jianhua Zeng
Abstract:
We study the existence of one-dimensional localized states supported by linear periodic potentials and a domain-wall-like Kerr nonlinearity. The model gives rise to several new types of asymmetric localized states, including single- and double-hump soliton profiles, and multihump structures. Exploiting the linear stability analysis and direct simulations, we prove that these localized states are e…
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We study the existence of one-dimensional localized states supported by linear periodic potentials and a domain-wall-like Kerr nonlinearity. The model gives rise to several new types of asymmetric localized states, including single- and double-hump soliton profiles, and multihump structures. Exploiting the linear stability analysis and direct simulations, we prove that these localized states are exceptional stable in the respective finite band gaps. The model applies to Bose-Einstein condensates loaded onto optical lattices, and in optics with period potentials, e.g., the photonic crystals and optical waveguide arrays, thereby the predicted solutions can be implemented in the state-of-the-art experiments.
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Submitted 21 September, 2019;
originally announced September 2019.
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Gap-type dark localized modes in a Bose-Einstein condensate with optical lattices
Authors:
Liangwei Zeng,
Jianhua Zeng
Abstract:
Bose-Einstein condensate (BEC) exhibits a variety of fascinating and unexpected macroscopic phenomena, and has attracted sustained attention in recent years--particularly in the field of solitons and associated nonlinear phenomena. Meanwhile, optical lattices have emerged as a versatile toolbox for understanding the properties and controlling the dynamics of BEC, among which the realization of bri…
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Bose-Einstein condensate (BEC) exhibits a variety of fascinating and unexpected macroscopic phenomena, and has attracted sustained attention in recent years--particularly in the field of solitons and associated nonlinear phenomena. Meanwhile, optical lattices have emerged as a versatile toolbox for understanding the properties and controlling the dynamics of BEC, among which the realization of bright gap solitons is an iconic result. However, the dark gap solitons are still experimentally unproven, and their properties in more than one dimension remain unknown. In light of this, we describe, numerically and theoretically, the formation and stability properties of gap-type dark localized modes in the context of ultracold atoms trapped in optical lattices. Two kinds of stable dark localized modes--gap solitons and soliton clusters--are predicted in both the one- and two-dimensional geometries. The vortical counterparts of both modes are also constructed in two dimensions. A unique feature is the existence of a nonlinear Bloch-wave background on which all above gap modes are situated. By employing linear-stability analysis and direct simulations, stability regions of the predicted modes are obtained. Our results offer the possibility of observing dark gap localized structures with cutting-edge techniques in ultracold atoms experiments and beyond, including in optics with photonic crystals and lattices.
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Submitted 21 September, 2019;
originally announced September 2019.
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Finite-Size Effects in the Dynamic Conductivity and Faraday Effect of Quantum Anomalous Hall Insulators
Authors:
Junjie Zeng,
Tao Hou,
Zhenhua Qiao,
Wang-Kong Tse
Abstract:
We theoretically study the finite-size effects in the dynamical response of a quantum anomalous Hall insulator in the disk geometry. Semi-analytic and numerical results are obtained for the wavefunctions and energies of the disk within a continuum Dirac Hamiltonian description subject to a topological infinite mass boundary condition. Using the Kubo formula, we obtain the frequency-dependent longi…
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We theoretically study the finite-size effects in the dynamical response of a quantum anomalous Hall insulator in the disk geometry. Semi-analytic and numerical results are obtained for the wavefunctions and energies of the disk within a continuum Dirac Hamiltonian description subject to a topological infinite mass boundary condition. Using the Kubo formula, we obtain the frequency-dependent longitudinal and Hall conductivities and find that optical transitions between edge states contribute dominantly to the real part of the dynamic Hall conductivity for frequency values both within and beyond the bulk band gap. We also find that the topological infinite mass boundary condition changes the low-frequency Hall conductivity to $ e^2/h $ in a finite-size system from the well-known value $ e^2/2h $ in an extended system. The magneto-optical Faraday rotation is then studied as a function of frequency for the setup of a quantum anomalous Hall insulator mounted on a dielectric substrate, showing both finite-size effects of the disk and Fabry-Pérot resonances due to the substrate. Our work demonstrates the important role played by the boundary condition in the topological properties of finite-size systems through its effects on the electronic wavefunctions.
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Submitted 24 July, 2019; v1 submitted 23 July, 2019;
originally announced July 2019.
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Absence of magnetic thermal conductivity in the quantum spin liquid candidate EtMe3Sb[Pd(dmit)2]2 -- revisited
Authors:
J. M. Ni,
B. L. Pan,
Y. Y. Huang,
J. Y. Zeng,
Y. J. Yu,
E. J. Cheng,
L. S. Wang,
R. Kato,
S. Y. Li
Abstract:
We present the ultralow-temperature specific heat and thermal conductivity measurements on single crystals of triangular-lattice organic compound EtMe$_3$Sb[Pd(dmit)$_2$]$_2$, which has long been considered as a gapless quantum spin liquid candidate. In specific heat measurements, a finite linear term is observed, consistent with the previous work [S. Yamashita $et$ $al.$, Nat. Commun. {\bf 2}, 27…
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We present the ultralow-temperature specific heat and thermal conductivity measurements on single crystals of triangular-lattice organic compound EtMe$_3$Sb[Pd(dmit)$_2$]$_2$, which has long been considered as a gapless quantum spin liquid candidate. In specific heat measurements, a finite linear term is observed, consistent with the previous work [S. Yamashita $et$ $al.$, Nat. Commun. {\bf 2}, 275 (2011)]. However, we do not observe a finite residual linear term in the thermal conductivity measurements, and the thermal conductivity does not change in a magnetic field of 6 Tesla. These results are in sharp contrast to previous thermal conductivity measurements on EtMe$_3$Sb[Pd(dmit)$_2$]$_2$ [M. Yamashita $et$ $al.$ Science {\bf 328}, 1246 (2010)], in which a huge residual linear term was observed and attributed to highly mobile gapless excitations, likely the spinons of a quantum spin liquid. In this context, the true ground state of EtMe$_3$Sb[Pd(dmit)$_2$]$_2$ has to be reconsidered.
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Submitted 24 April, 2019; v1 submitted 23 April, 2019;
originally announced April 2019.
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Micro-Structuring, Ablation and Defect Generation in Graphene with Femtosecond Pulses
Authors:
Andres Vasquez,
Panagis Samolis,
Junjie Zeng,
Michelle Y Sander
Abstract:
Femtosecond micromachining offers a contact-free and mask-less technique for material patterning. With ultrafast laser irradiation, permanent modifications to the properties of single layer graphene through material ablation or defect introduction can be induced. Multiple femtosecond pulse interactions with a single layer graphene are studied and a low laser ablation threshold ~9.2 mJ/cm2 is repor…
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Femtosecond micromachining offers a contact-free and mask-less technique for material patterning. With ultrafast laser irradiation, permanent modifications to the properties of single layer graphene through material ablation or defect introduction can be induced. Multiple femtosecond pulse interactions with a single layer graphene are studied and a low laser ablation threshold ~9.2 mJ/cm2 is reported for a 15 second illumination time. Clean ablated structures are generated in such a multi pulse irradiation configuration at low pulse energies as an attractive alternative to ablation with single femtosecond, high energy pulses. For a fully ablated graphene hole, a radially symmetric region extending around 2 um from the ablated edge is characterized by strong defect generation. Average distances between point-defects down to ~58 nm are derived and Raman spectroscopy implies that overall there is a strong resemblance to amorphous structures. For fluence values around 75% of the ablation threshold, modification with defect generation down to ~48 nm average defects lengths is reported, while the underlying graphene structure is maintained. Thus, depending on the laser parameter choice, the same laser configuration can be used to ablate graphene or to primarily introduce defect states. The presented findings offer interesting insights into femtosecond induced structural modifications of graphene that can lead to improved precision ablation and patterning of single-layer materials at the micro- and nano-scale. Further, this can be attractive for graphene or carbon-based device fabrication as well as sensor and transistor applications, where regions of varying carrier concentrations and different electrical, optical or physical properties are desired.
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Submitted 28 February, 2019;
originally announced March 2019.
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Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
Authors:
Anyuan Gao,
Jiawei Lai,
Yaojia Wang,
Zhen Zhu,
Shuchao Qin,
Junwen Zeng,
Geliang Yu,
Naizhou Wang,
Wenchao Chen,
Tianjun Cao,
Weida Hu,
Dong Sun,
Xianhui Chen,
Feng Miao,
Yi Shi,
Xiaomu Wang
Abstract:
Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engin…
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Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 μm wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale.
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Submitted 29 January, 2019;
originally announced January 2019.
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Quasi 1D topological nodal vortex line phase in doped superconducting 3D Dirac Semimetals
Authors:
Shengshan Qin,
Lunhui Hu,
Congcong Le,
Jinfeng Zeng,
Fu-chun Zhang,
Chen Fang,
Jiangping Hu
Abstract:
We study the vortex bound states in three dimensional (3D) superconducting Dirac semimetals with time reversal symmetry. Assuming two Dirac points on the kz-axis and bulk s-wave superconductivity, with a quantum vortex line parallel to the z-direction, we find that the superconducting vortex line has a robust quasi-1D nodal phase. The nodal phase stems from the symmetry protected Dirac points in t…
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We study the vortex bound states in three dimensional (3D) superconducting Dirac semimetals with time reversal symmetry. Assuming two Dirac points on the kz-axis and bulk s-wave superconductivity, with a quantum vortex line parallel to the z-direction, we find that the superconducting vortex line has a robust quasi-1D nodal phase. The nodal phase stems from the symmetry protected Dirac points in the normal state bands, and it can be characterized by a topological index (ν; n) at kz = 0 and kz = π, where νis the Z2 topological invariant for a 0D class-D system and n is the Z topological invariant for a 0D class-A system according to the Altland- Zirnbauer classification. Based on the topological index, we find that vortex end Majorana zero mode can coexist with the quasi-1D nodal phase in certain kinds of Dirac semimetals. The influence of the symmetry breaking perturbations on the quasi-1D nodal phase is also analyzed. Finally, we discuss the possible material realization of such nodal vortex line state.
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Submitted 1 February, 2019; v1 submitted 15 January, 2019;
originally announced January 2019.
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Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials
Authors:
Junwen Zeng,
Xin He,
Shi-Jun Liang,
Erfu Liu,
Yuanhui Sun,
Chen Pan,
Yu Wang,
Tianjun Cao,
Xiaowei Liu,
Chengyu Wang,
Lili Zhang,
Shengnan Yan,
Guangxu Su,
Zhenlin Wang,
Kenji Watanabe,
Takashi Taniguchi,
David J. Singh,
Lijun Zhang,
Feng Miao
Abstract:
Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identifica…
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Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic properties. However, realization of the electronic benefits in practical materials has been elusive experimentally. A key challenge is that experimental identification of the quantum confinement length, below which the thermoelectric power factor is significantly enhanced, remains elusive due to lack of simultaneous control of size and carrier density. Here we investigate gate tunable and temperature-dependent thermoelectric transport in $γ$ phase indium selenide ($γ$ InSe, n type semiconductor) samples with thickness varying from 7 to 29 nm. This allows us to properly map out dimension and doping space. Combining theoretical and experimental studies, we reveal that the sharper pre-edge of the conduction-band density of states arising from quantum confinement gives rise to an enhancement of the Seebeck coefficient and the power factor in the thinner InSe samples. Most importantly, we experimentally identify the role of the competition between quantum confinement length and thermal de Broglie wavelength in the enhancement of power factor. Our results provide an important and general experimental guideline for optimizing the power factor and improving the thermoelectric performance of two-dimensional layered semiconductors.
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Submitted 28 November, 2018;
originally announced November 2018.
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Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2
Authors:
Qiao Li,
Chaocheng He,
Yaojia Wang,
Erfu Liu,
Miao Wang,
Yu Wang,
Junwen Zeng,
Zecheng Ma,
Tianjun Cao,
Changjiang Yi,
Naizhou Wang,
Kenji. Watanabe,
Takashi. Taniguchi,
Lubing Shao,
Youguo Shi,
Xianhui Chen,
Shi-Jun Liang,
Qiang-Hua Wang,
Feng Miao
Abstract:
Due to the non-trivial topological band structure in type-II Weyl semimetal Tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type-II Weyl semimetal WTe2, proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-indu…
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Due to the non-trivial topological band structure in type-II Weyl semimetal Tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While realizing intrinsic superconductivity has been challenging in the type-II Weyl semimetal WTe2, proximity effect may open an avenue for the realization of superconductivity. Here, we report the observation of proximity-induced superconductivity with a long coherence length along c axis in WTe2 thin flakes based on a WTe2/NbSe2 van der Waals heterostructure. Interestingly, we also observe anomalous oscillations of the differential resistance during the transition from superconducting to normal state. Theoretical calculations show excellent agreement with experimental results, revealing that such a sub-gap anomaly is the intrinsic property of WTe2 in superconducting state induced by the proximity effect. Our findings enrich the understanding of superconducting phase of type-II Weyl semimetals, and pave the way for their future applications in topological quantum computing.
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Submitted 15 November, 2018;
originally announced November 2018.
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Geometric formalism for constructing arbitrary single-qubit dynamically corrected gates
Authors:
Junkai Zeng,
C. H. Yang,
A. S. Dzurak,
Edwin Barnes
Abstract:
Implementing high-fidelity quantum control and reducing the effect of the coupling between a quantum system and its environment is a major challenge in developing quantum information technologies. Here, we show that there exists a geometrical structure hidden within the time-dependent Schrödinger equation that provides a simple way to view the entire solution space of pulses that suppress noise er…
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Implementing high-fidelity quantum control and reducing the effect of the coupling between a quantum system and its environment is a major challenge in developing quantum information technologies. Here, we show that there exists a geometrical structure hidden within the time-dependent Schrödinger equation that provides a simple way to view the entire solution space of pulses that suppress noise errors in a system's evolution. In this framework, any single-qubit gate that is robust against quasistatic noise to first order corresponds to a closed three-dimensional space curve, where the driving fields that implement the robust gate can be read off from the curvature and torsion of the space curve. Gates that are robust to second order are in one-to-one correspondence with closed curves whose projections onto three mutually orthogonal planes each enclose a vanishing net area. We use this formalism to derive new examples of dynamically corrected gates generated from smooth pulses. We also show how it can be employed to analyze the noise-cancellation properties of pulses generated from numerical algorithms such as GRAPE. A similar geometrical framework exists for quantum systems of arbitrary Hilbert space dimension.
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Submitted 13 August, 2019; v1 submitted 12 November, 2018;
originally announced November 2018.
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Intertwined Spin and Orbital Density Waves in MnP Uncovered by Resonant Soft X-ray Scattering
Authors:
Bingying Pan,
Hoyoung Jang,
Jun-Sik Lee,
Ronny Sutarto,
Feizhou He,
J. F. Zeng,
Yang Liu,
Xiaowen Zhang,
Yu Feng,
Yiqing Hao,
Jun Zhao,
H. C. Xu,
Z. H. Chen,
Jiangping Hu,
Donglai Feng
Abstract:
Unconventional superconductors are often characterized by numerous competing and even intertwined orders in their phase diagrams. In particular, the electronic nematic phases, which spontaneously break rotational symmetry and often simultaneously involve spin, charge and/or orbital orders, appear conspicuously in both the cuprate and iron-based superconductors. The fluctuations associated with the…
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Unconventional superconductors are often characterized by numerous competing and even intertwined orders in their phase diagrams. In particular, the electronic nematic phases, which spontaneously break rotational symmetry and often simultaneously involve spin, charge and/or orbital orders, appear conspicuously in both the cuprate and iron-based superconductors. The fluctuations associated with these phases may provide the exotic pairing glue that underlies their high-temperature superconductivity. Helimagnet MnP, the first Mn-based superconductor under pressure, lacks high rotational symmetry. However our resonant soft X-ray scattering (RSXS) experiment discovers novel helical orbital density wave (ODW) orders in this three-dimensional, low-symmetry system, and reveals intertwined ordering phenomena in unprecedented detail. In particular, a ODW forms with half the period of the spin order and fully develops slightly above the spin ordering temperature, their domains develop simultaneously, yet the spin order domains are larger than those of the ODW, and they cooperatively produce another ODW with 1/3 the period of the spin order. These observations provide a comprehensive picture of the intricate interplay between spin and orbital orders in correlated materials, and they suggest that nematic-like physics ubiquitously exists beyond two-dimensional and high-symmetry systems, and the superconducting mechanism of MnP is likely analogous to those of cuprate and iron-based superconductors.
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Submitted 26 August, 2018;
originally announced August 2018.
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Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor
Authors:
Yu Wang,
Erfu Liu,
Anyuan Gao,
Tianjun Cao,
Mingsheng Long,
Chen Pan,
Lili Zhang,
Junwen Zeng,
Chenyu Wang,
Weida Hu,
Shi-Jun Liang,
Feng Miao
Abstract:
Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterost…
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Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in ReS2/h-BN/MoS2 vdW heterostructures-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to the charge transfer between floating gate and conduction channel. Furthermore, we show that the control of NPC through light intensity is promising in realization of light-tunable multi-bit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices.
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Submitted 18 August, 2018;
originally announced August 2018.
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Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning
Authors:
Song Hao,
Junwen Zeng,
Tao Xu,
Xin Cong,
Chenyu Wang,
Chenchen Wu,
Yaojia Wang,
Xiaowei Liu,
Tianjun Cao,
Guangxu Su,
Lanxin Jia,
Zhangting Wu,
Qian Lin,
Lili Zhang,
Shengnan Yan,
Mengfan Guo,
Zhenlin Wang,
Pingheng Tan,
Litao Sun,
Zhenhua Ni,
Shi-Jun Liang,
Xinyi Cui,
Feng Miao
Abstract:
Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis pr…
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Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMDs single crystals. Herein, we report the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm. The electrical measurement of synthesized PtTe2 reveals a record-high conductivity of as high as 3.3*106 S/m at room temperature. Besides, we experimentally identify the weak antilocalization behavior in the type-II Dirac semimetal PtTe2 for the first time. Furthermore, we develop a simple and general strategy to obtain atomically-thin PtTe2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electric conductivity. Our results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high-melting point transition metal.
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Submitted 7 August, 2018;
originally announced August 2018.