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Second-order temporal coherence of polariton lasers based on an atomically thin crystal in a microcavity
Authors:
Hangyong Shan,
Jens-Christian Drawer,
Meng Sun,
Carlos Anton-Solanas,
Martin Esmann,
Kentaro Yumigeta,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Sven Höfling,
Ivan Savenko,
Christian Schneider
Abstract:
Bosonic condensation and lasing of exciton-polaritons in microcavities is a fascinating solid-state phenomenon. It provides a versatile platform to study out-of-equilibrium many-body physics and has recently appeared at the forefront of quantum technologies. Here, we study the photon statistics via the second-order temporal correlation function of polariton lasing emerging from an optical microcav…
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Bosonic condensation and lasing of exciton-polaritons in microcavities is a fascinating solid-state phenomenon. It provides a versatile platform to study out-of-equilibrium many-body physics and has recently appeared at the forefront of quantum technologies. Here, we study the photon statistics via the second-order temporal correlation function of polariton lasing emerging from an optical microcavity integrated with an atomically thin MoSe2 crystal. Furthermore, we investigate the macroscopic polariton phase transition for varying excitation powers and temperatures. The lower-polariton exhibits photon bunching below the threshold, implying a dominant thermal distribution of the emission, while above the threshold, the second-order correlation transits towards unity, which evidences the formation of a coherent state. Our findings are in agreement with a microscopic numerical model, which explicitly includes scattering with phonons on the quantum level.
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Submitted 28 February, 2024;
originally announced February 2024.
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Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from Two-Dimensional Janus Layers
Authors:
Mohammed Sayyad,
Ying Qin,
Jan Kopaczek,
Adway Gupta,
Naim Patoary,
Shantanu Sinha,
Emmie Benard,
Austin Davis,
Kentaro Yumigeta,
Cheng-Lun Wu,
Han Li,
Shize Yang,
Ivan Sanchez Esqueda,
Arunima Singh,
Sefaattin Tongay
Abstract:
Two-dimensional Janus transition metal dichalcogenides (TMDs) have attracted attention due to their emergent properties arising from broken mirror symmetry and self-driven polarisation fields. While it has been proposed that their vdW superlattices hold the key to achieving superior properties in piezoelectricity and photovoltiacs, available synthesis has ultimately limited their realisation. Here…
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Two-dimensional Janus transition metal dichalcogenides (TMDs) have attracted attention due to their emergent properties arising from broken mirror symmetry and self-driven polarisation fields. While it has been proposed that their vdW superlattices hold the key to achieving superior properties in piezoelectricity and photovoltiacs, available synthesis has ultimately limited their realisation. Here, we report the first packed vdW nanoscrolls made from Janus TMDs through a simple one-drop solution technique. Our results, including ab-initio simulations, show that the Bohr radius difference between the top sulphur and the bottom selenium atoms within Janus M_Se^S (M=Mo, W) results in a permanent compressive surface strain that acts as a nanoscroll formation catalyst after small liquid interaction. Unlike classical 2D layers, the surface strain in Janus TMDs can be engineered from compressive to tensile by placing larger Bohr radius atoms on top (M_S^Se) to yield inverted C scrolls. Detailed microscopy studies offer the first insights into their morphology and readily formed Moiré lattices. In contrast, spectroscopy and FETs studies establish their excitonic and device properties and highlight significant differences compared to 2D flat Janus TMDs. These results introduce the first polar Janus TMD nanoscrolls and introduce inherent strain-driven scrolling dynamics as a catalyst to create superlattices.
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Submitted 31 May, 2023;
originally announced June 2023.
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Strong Effects of Interlayer Interaction on Valence-Band Splitting in Transition Metal Dichalcogenides
Authors:
Garrett Benson,
Viviane Zurdo Costa,
Neal Border,
Kentaro Yumigeta,
Mark Blei,
Sefaattin Tongay,
K. Watanabe,
T. Taniguchi,
Andrew Ichimura,
Santosh KC,
Taha Salavati-fard,
Bin Wang,
Akm Newaz
Abstract:
Understanding the origin of valence band maxima (VBM) splitting in transition metal dichalcogenides (TMDs) is important because it governs the unique spin and valley physics in monolayer and multilayer TMDs. In this work, we present our systematic study of VBM splitting ($Δ$) in atomically thin MoS$_2$ and WS$_2$ by employing photocurrent spectroscopy as we change the temperature and the layer num…
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Understanding the origin of valence band maxima (VBM) splitting in transition metal dichalcogenides (TMDs) is important because it governs the unique spin and valley physics in monolayer and multilayer TMDs. In this work, we present our systematic study of VBM splitting ($Δ$) in atomically thin MoS$_2$ and WS$_2$ by employing photocurrent spectroscopy as we change the temperature and the layer numbers. We found that VBM splitting in monolayer MoS$_2$ and WS$_2$ depends strongly on temperature, which contradicts the theory that spin-orbit coupling solely determines the VBM splitting in monolayer TMDs. We also found that the rate of change of VBM splitting with respect to temperature ($m=\frac{\partialΔ}{\partial T}$) is the highest for monolayer (-0.14 meV/K for MoS$_2$) and the rate decreases as the layer number increases ($m ~ 0$ meV/K for 5 layers MoS$_2$). We performed density functional theory (DFT) and the GW with Bethe-Salpeter Equation (GW-BSE) calculations to determine the electronic band structure and optical absorption for a bilayer MoS$_2$ with different interlayer separations. Our simulations agree with the experimental observations and demonstrate that the temperature dependence of VBM splitting in atomically thin monolayer and multilayer TMDs originates from the changes in the interlayer coupling strength between the neighboring layers. By studying two different types of TMDs and many different layer thicknesses, we also demonstrate that VBM splitting also depends on the layer numbers and type of transition metals. Our study will help understand the role spin-orbit coupling and interlayer interaction play in determining the VBM splitting in quantum materials and develop next-generation devices based on spin-orbit interactions.
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Submitted 9 May, 2022; v1 submitted 6 May, 2022;
originally announced May 2022.
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Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity
Authors:
Hangyong Shan,
Ivan Iorsh,
Bo Han,
Christoph Rupprecht,
Heiko Knopf,
Falk Eilenberger,
Martin Esmann,
Kentaro Yumigeta,
Kenji Watanabe,
Takashi Taniguchi,
Sebastian Klembt,
Sven Höfling,
Sefaattin Tongay,
Carlos Antón-Solanas,
Ivan A. Shelykh,
Christian Schneider
Abstract:
Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and de…
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Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe2 with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe2 dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation.
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Submitted 26 April, 2022;
originally announced April 2022.
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Nature of novel moiré exciton states in WSe$_2$/WS$_2$ heterobilayers
Authors:
Mit H. Naik,
Emma C. Regan,
Zuocheng Zhang,
Yang-hao Chan,
Zhenglu Li,
Danqing Wang,
Yoseob Yoon,
Chin Shen Ong,
Wenyu Zhao,
Sihan Zhao,
M. Iqbal Bakti Utama,
Beini Gao,
Xin Wei,
Mohammed Sayyad,
Kentaro Yumigeta,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Felipe H. da Jornada,
Feng Wang,
Steven G. Louie
Abstract:
Moiré patterns of transition metal dichalcogenide (TMD) heterobilayers have proven to be an ideal platform to host unusual correlated electronic phases, emerging magnetism, and correlated exciton physics. While the existence of novel moiré excitonic states is established through optical measurements, the microscopic nature of these states is still poorly understood, often relying on empirically fi…
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Moiré patterns of transition metal dichalcogenide (TMD) heterobilayers have proven to be an ideal platform to host unusual correlated electronic phases, emerging magnetism, and correlated exciton physics. While the existence of novel moiré excitonic states is established through optical measurements, the microscopic nature of these states is still poorly understood, often relying on empirically fit models. Here, combining large-scale first-principles GW-BSE calculations and micro-reflection spectroscopy, we identify the nature of the exciton resonances in WSe$_2$/WS$_2$ moiré superlattices, discovering a surprisingly rich set of moiré excitons that cannot be even qualitatively captured by prevailing continuum models. Our calculations reveal moiré excitons with distinct characters, including modulated Wannier excitons and previously unindentified intralayer charge-transfer excitons. Signatures of these distinct excitonic characters are confirmed experimentally via the unique carrier-density and magnetic-field dependences of different moiré exciton resonances. Our study highlights the highly non-trivial exciton states that can emerge in TMD moiré superlattices, and suggests novel ways of tuning many-body physics in moiré systems by engineering excited-states with specific spatial characters.
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Submitted 7 January, 2022;
originally announced January 2022.
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Correlated interlayer exciton insulator in double layers of monolayer WSe2 and moiré WS2/WSe2
Authors:
Zuocheng Zhang,
Emma C. Regan,
Danqing Wang,
Wenyu Zhao,
Shaoxin Wang,
Mohammed Sayyad,
Kentaro Yumigeta,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Michael Crommie,
Alex Zettl,
Michael P. Zaletel,
Feng Wang
Abstract:
Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a M…
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Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a Mott insulator state at hole density p/p0 = 1, where p0 corresponds to one hole per moiré lattice site. When electrons are added to the Mott insulator in the WS2/WSe2 moiré bilayer and an equal number of holes are injected into the WSe2 monolayer, a new interlayer exciton insulator emerges with the holes in the WSe2 monolayer and the electrons in the doped Mott insulator bound together through interlayer Coulomb interactions. The excitonic insulator is stable up to a critical hole density of ~ 0.5p0 in the WSe2 monolayer, beyond which the system becomes metallic. Our study highlights the opportunities for realizing novel quantum phases in double-layer moiré systems due to the interplay between the moiré flat band and strong interlayer electron interactions.
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Submitted 16 August, 2021;
originally announced August 2021.
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Imaging Generalized Wigner Crystal States in a WSe2/WS2 Moiré Superlattice
Authors:
Hongyuan Li,
Shaowei Li,
Emma C. Regan,
Danqing Wang,
Wenyu Zhao,
Salman Kahn,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Michael F. Crommie,
Feng Wang
Abstract:
The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transit…
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The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transition metal dichalcogenide (TMDC) moiré superlattices. Direct observation of the 2D Wigner crystal lattice in real space, however, has remained an outstanding challenge. Scanning tunneling microscopy (STM) in principle has sufficient spatial resolution to image a Wigner crystal, but conventional STM measurements can potentially alter fragile Wigner crystal states in the process of measurement. Here we demonstrate real-space imaging of 2D Wigner crystals in WSe2/WS2 moiré heterostructures using a novel non-invasive STM spectroscopy technique. We employ a graphene sensing layer in close proximity to the WSe2/WS2 moiré superlattice for Wigner crystal imaging, where local STM tunneling current into the graphene sensing layer is modulated by the underlying electron lattice of the Wigner crystal in the WSe2/WS2 heterostructure. Our measurement directly visualizes different lattice configurations associated with Wigner crystal states at fractional electron fillings of n = 1/3, 1/2, and 2/3, where n is the electron number per site. The n=1/3 and n=2/3 Wigner crystals are observed to exhibit a triangle and a honeycomb lattice, respectively, in order to minimize nearest-neighbor occupations. The n = 1/2 state, on the other hand, spontaneously breaks the original C3 symmetry and forms a stripe structure in real space. Our study lays a solid foundation toward the fundamental understanding of rich Wigner crystal states in WSe2/WS2 moiré heterostructures.
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Submitted 19 June, 2021;
originally announced June 2021.
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Spatial coherence of room-temperature monolayer WSe$_2$ exciton-polaritons in a trap
Authors:
Hangyong Shan,
Lukas Lackner,
Bo Han,
Evgeny Sedov,
Christoph Rupprecht,
Heiko Knopf,
Falk Eilenberger,
Johannes Beierlein,
Nils Kunte,
Martin Esmann,
Kentaro Yumigeta,
Kenji Watanabe,
Takashi Taniguchi,
Sebastian Klembt,
Sven Höfling,
Alexey V. Kavokin,
Sefaattin Tongay,
Christian Schneider,
Carlos Antón-Solanas
Abstract:
The emergence of spatial and temporal coherence of light emitted from solid-state systems is a fundamental phenomenon, rooting in a plethora of microscopic processes. It is intrinsically aligned with the control of light-matter coupling, and canonical for laser oscillation. However, it also emerges in the superradiance of multiple, phase-locked emitters, and more recently, coherence and long-range…
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The emergence of spatial and temporal coherence of light emitted from solid-state systems is a fundamental phenomenon, rooting in a plethora of microscopic processes. It is intrinsically aligned with the control of light-matter coupling, and canonical for laser oscillation. However, it also emerges in the superradiance of multiple, phase-locked emitters, and more recently, coherence and long-range order have been investigated in bosonic condensates of thermalized light, as well as in exciton-polaritons driven to a ground state via stimulated scattering. Here, we experimentally show that the interaction between photons in a Fabry-Perot microcavity and excitons in an atomically thin WSe$_2$ layer is sufficient such that the system enters the hybridized regime of strong light-matter coupling at ambient conditions. Via Michelson interferometry, we capture clear evidence of increased spatial and temporal coherence of the emitted light from the spatially confined system ground-state. The coherence build-up is accompanied by a threshold-like behaviour of the emitted light intensity, which is a fingerprint of a polariton laser effect. Valley-physics is manifested in the presence of an external magnetic field, which allows us to manipulate K and K' polaritons via the Valley-Zeeman-effect. Our findings are of high application relevance, as they confirm the possibility to use atomically thin crystals as simple and versatile components of coherent light-sources, and in valleytronic applications at room temperature.
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Submitted 9 November, 2021; v1 submitted 18 March, 2021;
originally announced March 2021.
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Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder
Authors:
Jing Li,
M. Goryca,
K. Yumigeta,
H. Li,
S. Tongay,
S. A. Crooker
Abstract:
Using time-resolved optical Kerr rotation, we measure the low temperature valley dynamics of resident electrons and holes in exfoliated WSe$_2$ monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two elect…
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Using time-resolved optical Kerr rotation, we measure the low temperature valley dynamics of resident electrons and holes in exfoliated WSe$_2$ monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two electrostatically-gated WSe$_2$ monolayers having different dielectric environments. In a fully-encapsulated structure (hBN/WSe$_2$/hBN, where hBN is hexagonal boron nitride), valley relaxation is found to be monoexponential. The valley relaxation time $τ_v$ is quite long ($\sim$10~$μ$s) at low carrier densities, but decreases rapidly to less than 100~ns at high electron or hole densities $\gtrsim$2 $\times 10^{12}$~cm$^{-2}$. In contrast, in a partially-encapsulated WSe$_2$ monolayer placed directly on silicon dioxide (hBN/WSe$_2$/SiO$_2$), carrier valley relaxation is multi-exponential at low carrier densities. The difference is attributed to environmental disorder from the SiO$_2$ substrate. Unexpectedly, very small out-of-plane magnetic fields can increase $τ_v$, especially in the hBN/WSe$_2$/SiO$_2$ structure, suggesting that localized states induced by disorder can play an important role in depolarizing spins and mediating the valley relaxation of resident carriers in monolayer transition metal-dichalcogenide semiconductors.
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Submitted 9 March, 2021;
originally announced March 2021.
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Imaging local discharge cascades for correlated electrons in WS2/WSe2 moiré superlattices
Authors:
Hongyuan Li,
Shaowei Li,
Mit H. Naik,
Jingxu Xie,
Xinyu Li,
Emma Regan,
Danqing Wang,
Wenyu Zhao,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Michael F. Crommie,
Feng Wang
Abstract:
Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractiona…
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Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractional fillings5-9. Microscopic understanding of these emerging quantum phases, however, is still lacking. Here we describe a novel scanning tunneling microscopy (STM) technique for local sensing and manipulation of correlated electrons in a gated WS2/WSe2 moiré superlattice that enables experimental extraction of fundamental extended Hubbard model parameters. We demonstrate that the charge state of local moiré sites can be imaged by their influence on STM tunneling current, analogous to the charge-sensing mechanism in a single-electron transistor. In addition to imaging, we are also able to manipulate the charge state of correlated electrons. Discharge cascades of correlated electrons in the moiré superlattice are locally induced by ramping the STM bias, thus enabling the nearest-neighbor Coulomb interaction (UNN) to be estimated. 2D mapping of the moiré electron charge states also enables us to determine onsite energy fluctuations at different moiré sites. Our technique should be broadly applicable to many semiconductor moiré systems, offering a powerful new tool for microscopic characterization and control of strongly correlated states in moiré superlattices.
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Submitted 16 February, 2021;
originally announced February 2021.
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Nanoscale Conductivity Imaging of Correlated Electronic States in WSe2/WS2 Moiré Superlattices
Authors:
Zhaodong Chu,
Emma C Regan,
Xuejian Ma,
Danqing Wang,
Zifan Xu,
M. Iqbal Bakti Utama,
Kentaro Yumigeta,
Mark Blei,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Feng Wang,
Keji Lai
Abstract:
We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the fi…
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We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe2/WS2 heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the first time a Mott insulating state at one electron per moiré unit cell. Appreciable inhomogeneity of the correlated states is directly visualized in the hetero-bilayer region, indicative of local disorders in the moiré superlattice potential or electrostatic doping. Our work provides important insights on 2D moiré systems down to the microscopic level.
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Submitted 13 July, 2020;
originally announced July 2020.
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Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices
Authors:
Hongyuan Li,
Shaowei Li,
Mit H. Naik,
Jingxu Xie,
Xinyu Li,
Jiayin Wang,
Emma Regan,
Danqing Wang,
Wenyu Zhao,
Sihan Zhao,
Salman Kahn,
Kentaro Yumigeta,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Feng Wang,
Michael F. Crommie
Abstract:
Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and contr…
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Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and control of the correlated moiré phenomena. Here we quantitatively study the moiré flat bands in three-dimensional (3D) reconstructed WSe2/WS2 moiré superlattices by comparing scanning tunneling spectroscopy (STS) of high quality exfoliated TMD heterostructure devices with ab initio simulations of TMD moiré superlattices. A strong 3D buckling reconstruction accompanied by large in-plane strain redistribution is identified in our WSe2/WS2 moiré heterostructures. STS imaging demonstrates that this results in a remarkably narrow and highly localized K-point moiré flat band at the valence band edge of the heterostructure. A series of moiré flat bands are observed at different energies that exhibit varying degrees of localization. Our observations contradict previous simplified theoretical models but agree quantitatively with ab initio simulations that fully capture the 3D structural reconstruction. Here the strain redistribution and 3D buckling dominate the effective moiré potential and result in moiré flat bands at the Brillouin zone K points.
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Submitted 12 July, 2020;
originally announced July 2020.
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Dipolar and magnetic properties of strongly absorbing hybrid interlayer excitons in pristine bilayer MoS$_2$
Authors:
Etienne Lorchat,
Malte Selig,
Florian Katsch,
Kentaro Yumigeta,
Sefaattin Tongay,
Andreas Knorr,
Christian Schneider,
Sven Höfling
Abstract:
Van der Waals heterostructures composed of transition metal dichalcogenide monolayers (TMDs) are characterized by their truly rich excitonic properties which are determined by their structural, geometric and electronic properties: In contrast to pure monolayers, electrons and holes can be hosted in different materials, resulting in highly tunable dipolar manyparticle complexes. However, for genuin…
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Van der Waals heterostructures composed of transition metal dichalcogenide monolayers (TMDs) are characterized by their truly rich excitonic properties which are determined by their structural, geometric and electronic properties: In contrast to pure monolayers, electrons and holes can be hosted in different materials, resulting in highly tunable dipolar manyparticle complexes. However, for genuine spatially indirect excitons, the dipolar nature is usually accompanied by a notable quenching of the exciton oscillator strength. Via electric and magnetic field dependent measurements, we demonstrate, that a slightly biased pristine bilayer MoS$_2$ hosts strongly dipolar excitons, which preserve a strong oscillator strength. We scrutinize their giant dipole moment, and shed further light on their orbital- and valley physics via bias-dependent magnetic field measurements.
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Submitted 24 April, 2020;
originally announced April 2020.
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Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices
Authors:
Emma C. Regan,
Danqing Wang,
Chenhao Jin,
M. Iqbal Bakti Utama,
Beini Gao,
Xin Wei,
Sihan Zhao,
Wenyu Zhao,
Kentaro Yumigeta,
Mark Blei,
Johan Carlstroem,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Michael Crommie,
Alex Zettl,
Feng Wang
Abstract:
Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures pro…
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Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures provide another exciting model system to explore correlated quantum phenomena, with the addition of strong light-matter interactions and large spin-orbital coupling. Here we report the optical detection of strongly correlated phases in semiconducting WSe2/WS2 moiré superlattices. Our sensitive optical detection technique reveals a Mott insulator state at one hole per superlattice site (ν = 1), and surprising insulating phases at fractional filling factors ν = 1/3 and 2/3, which we assign to generalized Wigner crystallization on an underlying lattice. Furthermore, the unique spin-valley optical selection rules of TMDC heterostructures allow us to optically create and investigate low-energy spin excited states in the Mott insulator. We reveal an especially slow spin relaxation lifetime of many microseconds in the Mott insulating state, orders-of-magnitude longer than that of charge excitations. Our studies highlight novel correlated physics that can emerge in moiré superlattices beyond graphene.
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Submitted 20 October, 2019;
originally announced October 2019.
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Strain-tunable Single Photon Sources in WSe2 Monolayers
Authors:
Oliver Iff,
Davide Tedeschi,
Javier Martín-Sánchez,
Magdalena Moczała-Dusanowska,
Sefaattin Tongay,
Kentaro Yumigeta,
Javier Taboada-Gutiérrez,
Matteo Savaresi,
Armando Rastelli,
Pablo Alonso-González,
Sven Höfling,
Rinaldo Trotta,
Christian Schneider
Abstract:
The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum…
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The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
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Submitted 4 September, 2019;
originally announced September 2019.
