Showing 1–50 of 90 results for author: Crommie, M

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Authors: Hyobeom Lee, Hayoon Im, Byoung Ki Choi, Kyoungree Park, Yi Chen, Wei Ruan, Yong Zhong, Ji-Eun Lee, Hyejin Ryu, Michael F. Crommie, Zhi-Xun Shen, Choongyu Hwang, Sung-Kwan Mo, Jinwoong Hwang

Abstract: Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a contr… ▽ More Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties. △ Less

Submitted 27 July, 2024; originally announced July 2024.

Comments: 23 pages, 4 figures

Journal ref: Nano Convergence 11, 14 (2024)

Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures

Authors: Hongyuan Li, Ziyu Xiang, Tianle Wang, Mit H. Naik, Woochang Kim, Jiahui Nie, Shiyu Li, Zhehao Ge, Zehao He, Yunbo Ou, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Steven G. Louie, Michael P. Zaletel, Michael F. Crommie, Feng Wang

Abstract: One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demon… ▽ More One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Regioselective On-Surface Synthesis of [3]Triangulene Graphene Nanoribbons

Authors: Michael C. Daugherty, Peter H. Jacobse, Jingwei Jiang, Joaquim Jornet-Somoza, Reis Dorit, Ziyi Wang, Jiaming Lu, Ryan McCurdy, Angel Rubio, Steven G. Louie, Michael F. Crommie, Felix R. Fischer

Abstract: The integration of low-energy states into bottom-up engineered graphene nanoribbons (GNRs) is a robust strategy for realizing materials with tailored electronic band structure for nanoelectronics. Low-energy zero-modes (ZMs) can be introduced into nanographenes (NGs) by creating an imbalance between the two sublattices of graphene. This phenomenon is exemplified by the family of [n]triangulenes. H… ▽ More The integration of low-energy states into bottom-up engineered graphene nanoribbons (GNRs) is a robust strategy for realizing materials with tailored electronic band structure for nanoelectronics. Low-energy zero-modes (ZMs) can be introduced into nanographenes (NGs) by creating an imbalance between the two sublattices of graphene. This phenomenon is exemplified by the family of [n]triangulenes. Here, we demonstrate the synthesis of [3]triangulene-GNRs, a regioregular one-dimensional (1D) chain of [3]triangulenes linked by five-membered rings. Hybridization between ZMs on adjacent [3]triangulenes leads to the emergence of a narrow band gap, Eg = 0.7 eV, and topological end states that are experimentally verified using scanning tunneling spectroscopy (STS). Tight-binding and first-principles density functional theory (DFT) calculations within the local spin density approximation (LSDA) corroborate our experimental observations. Our synthetic design takes advantage of a selective on-surface head-to-tail coupling of monomer building blocks enabling the regioselective synthesis of [3]triangulene-GNRs. Detailed ab initio theory provides insight into the mechanism of on-surface radical polymerization, revealing the pivotal role of Au-C bond formation/breakage in driving selectivity. △ Less

Submitted 24 February, 2024; originally announced February 2024.

Comments: 22 Pages, 4 Figures

Quantum Melting of a Disordered Wigner Solid

Authors: Ziyu Xiang, Hongyuan Li, Jianghan Xiao, Mit H. Naik, Zhehao Ge, Zehao He, Sudi Chen, Jiahui Nie, Shiyu Li, Yifan Jiang, Renee Sailus, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Steven G. Louie, Michael F. Crommie, Feng Wang

Abstract: The behavior of two-dimensional electron gas (2DEG) in extreme coupling limits are reasonably well-understood, but our understanding of intermediate region remains limited. Strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at very low densities, and these evolve to a Fermi liquid at high densities. At intermediate densities, however, where the Wigner crystal… ▽ More The behavior of two-dimensional electron gas (2DEG) in extreme coupling limits are reasonably well-understood, but our understanding of intermediate region remains limited. Strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at very low densities, and these evolve to a Fermi liquid at high densities. At intermediate densities, however, where the Wigner crystal melts into a strongly correlated electron fluid that is poorly understood partly due to a lack of microscopic probes for delicate quantum phases. Here we report the first imaging of a disordered Wigner solid and its quantum densification and quantum melting behavior in a bilayer MoSe2 using a non-invasive scanning tunneling microscopy (STM) technique. We observe a Wigner solid with nanocrystalline domains pinned by local disorder at low hole densities. With slightly increasing electrostatic gate voltages, the holes are added quantum mechanically during the densification of the disordered Wigner solid. As the hole density is increased above a threshold (p ~ 5.7 * 10e12 (cm-2)), the Wigner solid is observed to melt locally and create a mixed phase where solid and liquid regions coexist. With increasing density, the liquid regions gradually expand and form an apparent percolation network. Local solid domains appear to be pinned and stabilized by local disorder over a range of densities. Our observations are consistent with a microemulsion picture of Wigner solid quantum melting where solid and liquid domains emerge spontaneously and solid domains are pinned by local disorder. △ Less

Submitted 8 February, 2024; originally announced February 2024.

Wigner Molecular Crystals from Multi-electron Moiré Artificial Atoms

Authors: Hongyuan Li, Ziyu Xiang, Aidan P. Reddy, Trithep Devakul, Renee Sailus, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Liang Fu, Michael F. Crommie, Feng Wang

Abstract: Semiconductor moiré superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moiré sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insu… ▽ More Semiconductor moiré superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moiré sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insulators to quantum anomalous Hall insulators at a filling of one electron per moiré unit cell. New types of quantum solids should arise at even higher filling factors where the multi-electron configuration of moiré artificial atoms provides new degrees of freedom. Here we report the experimental observation of Wigner molecular crystals emerging from multi-electron artificial atoms in twisted bilayer WS2 moiré superlattices. Moiré artificial atoms, unlike natural atoms, can host qualitatively different electron states due to the interplay between quantized energy levels and Coulomb interactions. Using scanning tunneling microscopy (STM), we demonstrate that Wigner molecules appear in multi-electron artificial atoms when Coulomb interactions dominate. Three-electron Wigner molecules, for example, are seen to exhibit a characteristic trimer pattern. The array of Wigner molecules observed in a moiré superlattice comprises a new crystalline phase of electrons: the Wigner molecular crystal. We show that these Wigner molecular crystals are highly tunable through mechanical strain, moiré period, and carrier charge type. Our study presents new opportunities for exploring quantum phenomena in moiré quantum solids composed of multi-electron artificial atoms. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Authors: Jingxu Xie, Zuocheng Zhang, Haodong Zhang, Vikram Nagarajan, Wenyu Zhao, Haleem Kim, Collin Sanborn, Ruishi Qi, Sudi Chen, Salman Kahn, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Michael Crommie, James Analytis, Feng Wang

Abstract: Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), espec… ▽ More Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer doping with WSe$_2$/$α$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole doping as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/α$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $μ$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $μ$A$\cdot$ $μ$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law. △ Less

Submitted 8 December, 2023; originally announced December 2023.

Terahertz phonon engineering with van der Waals heterostructures

Authors: Yoseob Yoon, Zheyu Lu, Can Uzundal, Ruishi Qi, Wenyu Zhao, Sudi Chen, Qixin Feng, Woochang Kim, Mit H. Naik, Kenji Watanabe, Takashi Taniguchi, Steven G. Louie, Michael F. Crommie, Feng Wang

Abstract: Phononic engineering at gigahertz (GHz) frequencies form the foundation of microwave acoustic filters, acousto-optic modulators, and quantum transducers. Terahertz (THz) phononic engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite its potential, methods for engineering THz phonons have been l… ▽ More Phononic engineering at gigahertz (GHz) frequencies form the foundation of microwave acoustic filters, acousto-optic modulators, and quantum transducers. Terahertz (THz) phononic engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite its potential, methods for engineering THz phonons have been limited due to the challenges of achieving the required material control at sub-nanometer precision and efficient phonon coupling at THz frequencies. Here, we demonstrate efficient generation, detection, and manipulation of THz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We employ few-layer graphene (FLG) as an ultrabroadband phonon transducer, converting femtosecond near-infrared pulses to acoustic phonon pulses with spectral content up to 3 THz. A monolayer WSe$_2$ is used as a sensor, where high-fidelity readout is enabled by the exciton-phonon coupling and strong light-matter interactions. Combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we perform THz phononic spectroscopy. Using this platform, we demonstrate high-Q THz phononic cavities and show that a monolayer WSe$_2$ embedded in hexagonal boron nitride (hBN) can efficiently block the transmission of THz phonons. By comparing our measurements to a nanomechanical model, we obtain the force constants at the heterointerfaces. Our results could enable THz phononic metamaterials for ultrabroadband acoustic filters and modulators, and open novel routes for thermal engineering. △ Less

Submitted 23 August, 2024; v1 submitted 7 October, 2023; originally announced October 2023.

Journal ref: Nature 631, 771 (2024)

Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures

Authors: Ruishi Qi, Andrew Y. Joe, Zuocheng Zhang, Yongxin Zeng, Tiancheng Zheng, Qixin Feng, Emma Regan, Jingxu Xie, Zheyu Lu, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Michael F. Crommie, Allan H. MacDonald, Feng Wang

Abstract: Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron a… ▽ More Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron and hole densities are unequal. Here, we use optical spectroscopy to quantitatively probe the local thermodynamic properties of strongly correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe a discontinuity in the electron and hole chemical potentials at matched electron and hole densities, a definitive signature of an excitonic insulator ground state. The excitonic insulator is stable up to a Mott density of ~$0.8\times {10}^{12} \mathrm{cm}^{-2}$ and has a thermal ionization temperature of ~70 K. The density dependence of the electron, hole, and exciton chemical potentials reveals strong correlation effects across the phase diagram. Compared with a non-interacting uniform charge distribution, the correlation effects lead to significant attractive exciton-exciton and exciton-charge interactions in the electron-hole fluid. Our work highlights the unique quantum behavior that can emerge in strongly correlated electron-hole systems. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Imaging Moiré Excited States with Photocurrent Tunneling Microscopy

Authors: Hongyuan Li, Ziyu Xiang, Mit H. Naik, Woochang Kim, Zhenglu Li, Renee Sailus, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Felipe H. da Jornada, Steven G. Louie1, Michael F. Crommie, Feng Wang

Abstract: Moiré superlattices provide a highly tunable and versatile platform to explore novel quantum phases and exotic excited states ranging from correlated insulators1-17 to moiré excitons7-10,18. Scanning tunneling microscopy has played a key role in probing microscopic behaviors of the moiré correlated ground states at the atomic scale1,11-15,19. Atomic-resolution imaging of quantum excited state in m… ▽ More Moiré superlattices provide a highly tunable and versatile platform to explore novel quantum phases and exotic excited states ranging from correlated insulators1-17 to moiré excitons7-10,18. Scanning tunneling microscopy has played a key role in probing microscopic behaviors of the moiré correlated ground states at the atomic scale1,11-15,19. Atomic-resolution imaging of quantum excited state in moiré heterostructures, however, has been an outstanding experimental challenge. Here we develop a novel photocurrent tunneling microscopy by combining laser excitation and scanning tunneling spectroscopy (laser-STM) to directly visualize the electron and hole distribution within the photoexcited moiré exciton in a twisted bilayer WS2 (t-WS2). We observe that the tunneling photocurrent alternates between positive and negative polarities at different locations within a single moiré unit cell. This alternating photocurrent originates from the exotic in-plane charge-transfer (ICT) moiré exciton in the t-WS2 that emerges from the competition between the electron-hole Coulomb interaction and the moiré potential landscape. Our photocurrent maps are in excellent agreement with our GW-BSE calculations for excitonic states in t-WS2. The photocurrent tunneling microscopy creates new opportunities for exploring photoexcited non-equilibrium moiré phenomena at the atomic scale. △ Less

Submitted 1 June, 2023; originally announced June 2023.

WS$_2$ Band Gap Renormalization Induced by Tomonaga Luttinger Liquid Formation in Mirror Twin Boundaries

Authors: Antonio Rossi, John C. Thomas, Johannes T. Küchle, Elyse Barré, Zhuohang Yu, Da Zhou, Shalini Kumari, Hsin-Zon Tsai, Ed Wong, Chris Jozwiak, Aaron Bostwick, Joshua A. Robinson, Mauricio Terrones, Archana Raja, Adam Schwartzberg, D. Frank Ogletree, Jeffrey B. Neaton, Michael F. Crommie, Francesco Allegretti, Willi Auwärter, Eli Rotenberg, Alexander Weber-Bargioni

Abstract: Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of mirror twin boundaries (MTBs) hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate requi… ▽ More Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of mirror twin boundaries (MTBs) hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cross-correlative investigation. Here, we study TLL formation in MTBs within defectively engineered WS$_2$ atop graphene, where band structure and the atomic environment is visualized with nano angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy, and non-contact atomic force microscopy. Correlations between the local density of states and electronic band dispersion elucidated the electron transfer from graphene into a TLL hosted by MTB defects. We find that MTB defects can be substantially charged at a local level, which drives a band gap shift by $\sim$0.5 eV. △ Less

Submitted 18 January, 2023; v1 submitted 6 January, 2023; originally announced January 2023.

Comments: Main text is 13 pages, 4 figures; Supplementary text is 14 pages, 11 figures

Visualizing and manipulating chiral interface states in a moiré quantum anomalous Hall insulator

Authors: Canxun Zhang, Tiancong Zhu, Salman Kahn, Tomohiro Soejima, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Feng Wang, Michael P. Zaletel, Michael F. Crommie

Abstract: Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be… ▽ More Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be directly imaged using a scanning tunneling microscope (STM). To accomplish this tMBLG carrier concentration was tuned to stabilize neighboring domains of opposite Chern number, thus providing topological interfaces completely devoid of any structural boundaries. STM tip pulse-induced quantum dots were utilized to induce new Chern domains and thereby create new chiral interface states with tunable chirality at predetermined locations. Theoretical analysis confirms the chiral nature of observed interface states and enables the determination of the characteristic length scale of valley polarization reversal across neighboring tMBLG Chern domains. tMBLG is shown to be a useful platform for imaging the exotic topological properties of correlated moiré systems. △ Less

Submitted 23 July, 2023; v1 submitted 6 December, 2022; originally announced December 2022.

Comments: 30 pages, 13 figures, 1 table

Imaging gate-induced molecular melting on a graphene field-effect transistor

Authors: Franklin Liou, Hsin-Zon Tsai, Zachary A. H. Goodwin, Andrew S. Aikawa, Ethan Ha, Michael Hu, Yiming Yang, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Johannes Lischner, Michael F. Crommie

Abstract: Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scann… ▽ More Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scanning tunneling microscopy. Back-gate voltages applied to a F4TCNQ-decorated graphene FET induce reversible transitions between a charge-neutral solid phase and a negatively charged liquid phase. Nonequilibrium molecular melting dynamics are visualized by rapidly heating the graphene surface with electrical current and imaging the resulting evolution toward new equilibrium states. An analytical model has been developed that explains the observed equilibrium mixed-state phases based on spectroscopic measurement of both solid and liquid molecular energy levels. Observed non-equilibrium melting dynamics are consistent with Monte Carlo simulations. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Local spectroscopy of a gate-switchable moiré quantum anomalous Hall insulator

Authors: Canxun Zhang, Tiancong Zhu, Tomohiro Soejima, Salman Kahn, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Feng Wang, Michael P. Zaletel, Michael F. Crommie

Abstract: In recent years, correlated insulating states, unconventional superconductivity, and topologically non-trivial phases have all been observed in several moiré heterostructures. However, understanding of the physical mechanisms behind these phenomena is hampered by the lack of local electronic structure data. Here, we use scanning tunnelling microscopy and spectroscopy to demonstrate how the interpl… ▽ More In recent years, correlated insulating states, unconventional superconductivity, and topologically non-trivial phases have all been observed in several moiré heterostructures. However, understanding of the physical mechanisms behind these phenomena is hampered by the lack of local electronic structure data. Here, we use scanning tunnelling microscopy and spectroscopy to demonstrate how the interplay between correlation, topology, and local atomic structure determines the behaviour of electron-doped twisted monolayer-bilayer graphene. Through gate- and magnetic field-dependent measurements, we observe local spectroscopic signatures indicating a quantum anomalous Hall insulating state with a total Chern number of $\pm 2$ at a doping level of three electrons per moiré unit cell. We show that the sign of the Chern number and associated magnetism can be electrostatically switched only over a limited range of twist angle and sample hetero-strain values. This results from a competition between the orbital magnetization of filled bulk bands and chiral edge states, which is sensitive to strain-induced distortions in the moiré superlattice. △ Less

Submitted 10 May, 2023; v1 submitted 12 October, 2022; originally announced October 2022.

Comments: Article 14 pages, 4 figures & Supplementary Information 13 pages, 9 figures

Journal ref: Nature Communications 14, 3595 (2023)

A novel $\sqrt{19}\times\sqrt{19}$ superstructure in epitaxially grown 1T-TaTe$_2$

Authors: Jinwoong Hwang, Yeongrok Jin, Canxun Zhang, Tiancong Zhu, Kyoo Kim, Yong Zhong, Ji-Eun Lee, Zongqi Shen, Yi Chen, Wei Ruan, Hyejin Ryu, Choongyu Hwang, Jaekwang Lee, Michael F. Crommie, Sung-Kwan Mo, Zhi-Xun Shen

Abstract: The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe me… ▽ More The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe$_2$ exhibits a variety of metastable charge density wave orders, including the $\sqrt{19}\times\sqrt{19}$ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, we find that only the $\sqrt{19}\times\sqrt{19}$ order persists in 1T-TaTe$_2$ films thicker than a monolayer, up to 8 layers. Our findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process. △ Less

Submitted 4 October, 2022; originally announced October 2022.

Journal ref: Advanced materials 34, 2204579 (2022)

Mapping Charge Excitations in Generalized Wigner Crystals

Authors: Hongyuan Li, Ziyu Xiang, Emma Regan, Wenyu Zhao, Renee Sailus, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Michael F. Crommie, Feng Wang

Abstract: Transition metal dichalcogenide-based moire superlattices exhibit very strong electron-electron correlations, thus giving rise to strongly correlated quantum phenomena such as generalized Wigner crystal states. Theoretical studies predict that unusual quasiparticle excitations across the correlated gap between upper and lower Hubbard bands can arise due to long-range Coulomb interactions in genera… ▽ More Transition metal dichalcogenide-based moire superlattices exhibit very strong electron-electron correlations, thus giving rise to strongly correlated quantum phenomena such as generalized Wigner crystal states. Theoretical studies predict that unusual quasiparticle excitations across the correlated gap between upper and lower Hubbard bands can arise due to long-range Coulomb interactions in generalized Wigner crystal states. Here we describe a new scanning single-electron charging (SSEC) spectroscopy technique with nanometer spatial resolution and single-electron charge resolution that enables us to directly image electron and hole wavefunctions and to determine the thermodynamic gap of generalized Wigner crystal states in twisted WS2 moire heterostructures. High-resolution SSEC spectroscopy was achieved by combining scanning tunneling microscopy (STM) with a monolayer graphene sensing layer, thus enabling the generation of individual electron and hole quasiparticles in generalized Wigner crystals. We show that electron and hole quasiparticles have complementary wavefunction distributions and that thermodynamic gaps of order 50meV exist for the 1/3 and 2/3 generalized Wigner crystal states. △ Less

Submitted 28 September, 2022; v1 submitted 26 September, 2022; originally announced September 2022.

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Authors: Zhehao Ge, Dillon Wong, Juwon Lee, Frederic Joucken, Eberth A. Quezada-Lopez, Salman Kahn, Hsin-Zon Tsai, Takashi Taniguchi, Kenji Watanabe, Feng Wang, Alex Zettl, Michael F. Crommie, Jairo Velasco Jr

Abstract: Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices… ▽ More Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states. △ Less

Submitted 12 July, 2022; originally announced July 2022.

Journal ref: Nano Letters 2021

Observation of a multitude of correlated states at the surface of bulk 1T-TaSe$_2$ crystals

Authors: Yi Chen, Wei Ruan, Jeffrey D. Cain, Ryan L. Lee, Salman Kahn, Caihong Jia, Alex Zettl, Michael F. Crommie

Abstract: The interplay between electron-electron interactions and structural ordering can yield exceptionally rich correlated electronic phases. We have used scanning tunneling microscopy to investigate bulk 1T-TaSe2 and have uncovered surprisingly diverse correlated surface states thereof. These surface states exhibit the same in-plane charge density wave ordering but dramatically different electronic gro… ▽ More The interplay between electron-electron interactions and structural ordering can yield exceptionally rich correlated electronic phases. We have used scanning tunneling microscopy to investigate bulk 1T-TaSe2 and have uncovered surprisingly diverse correlated surface states thereof. These surface states exhibit the same in-plane charge density wave ordering but dramatically different electronic ground states ranging from insulating to metallic. The insulating variety of surface state shows signatures of a decoupled surface Mott layer. The metallic surface states, on the other hand, exhibit zero-bias peaks of varying strength that suggest Kondo phases arising from coupling between the Mott surface layer and the metallic bulk of 1T-TaSe2. The surface of bulk 1T-TaSe2 thus constitutes a rare realization of the periodic Anderson model covering a wide parameter regime, thereby providing a model system for accessing different correlated phenomena in the same crystal. Our results highlight the central role played by strong correlations in this material family. △ Less

Submitted 5 September, 2022; v1 submitted 25 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. B 106, 075153 (2022)

Large-gap insulating dimer ground state in monolayer IrTe2

Authors: Jinwoong Hwang, Kyoo Kim, Canxun Zhang, Tiancong Zhu, Charlotte Herbig, Sooran Kim, Bongjae Kim, Yong Zhong, Mohamed Salah, Mohamed M. El-Desoky, Choongyu Hwang, Zhi-Xun Shen, Michael F. Crommie, Sung-Kwan Mo

Abstract: Monolayers of two-dimensional van der Waals materials exhibit novel electronic phases distinct from their bulk due to the symmetry breaking and reduced screening in the absence of the interlayer coupling. In this work, we combine angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy to demonstrate the emergence of a unique insulating 2 x 1 dimer ground state in m… ▽ More Monolayers of two-dimensional van der Waals materials exhibit novel electronic phases distinct from their bulk due to the symmetry breaking and reduced screening in the absence of the interlayer coupling. In this work, we combine angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy to demonstrate the emergence of a unique insulating 2 x 1 dimer ground state in monolayer 1T-IrTe2 that has a large band gap in contrast to the metallic bilayer-to-bulk forms of this material. First-principles calculations reveal that phonon and charge instabilities as well as local bond formation collectively enhance and stabilize a charge-ordered ground state. Our findings provide important insights into the subtle balance of interactions having similar energy scales that occurs in the absence of strong interlayer coupling, which offers new opportunities to engineer the properties of 2D monolayers. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Journal ref: Nature communications 13, 906 (2022)

Evidence for a spinon Kondo effect in cobalt atoms on single-layer 1T-TaSe$_2$

Authors: Yi Chen, Wen-Yu He, Wei Ruan, Jinwoong Hwang, Shujie Tang, Ryan L. Lee, Meng Wu, Tiancong Zhu, Canxun Zhang, Hyejin Ryu, Feng Wang, Steven G. Louie, Zhi-Xun Shen, Sung-Kwan Mo, Patrick A. Lee, Michael F. Crommie

Abstract: Quantum spin liquids (QSLs) are highly entangled, disordered magnetic states that arise in frustrated Mott insulators and host exotic fractional excitations such as spinons and chargons. Despite being charge insulators some QSLs are predicted to exhibit gapless itinerant spinons that yield metallic behavior in the spin channel. We have deposited isolated magnetic atoms onto single-layer (SL) 1T-Ta… ▽ More Quantum spin liquids (QSLs) are highly entangled, disordered magnetic states that arise in frustrated Mott insulators and host exotic fractional excitations such as spinons and chargons. Despite being charge insulators some QSLs are predicted to exhibit gapless itinerant spinons that yield metallic behavior in the spin channel. We have deposited isolated magnetic atoms onto single-layer (SL) 1T-TaSe$_2$, a gapless QSL candidate, to experimentally probe how itinerant spinons couple to impurity spin centers. Using scanning tunneling spectroscopy we observe the emergence of new, impurity-induced resonance peaks at the 1T-TaSe$_2$ Hubbard band edges when cobalt adatoms are positioned to have maximal spatial overlap with the Hubbard band charge distribution. These resonance peaks disappear when the spatial overlap is reduced or when the magnetic impurities are replaced with non-magnetic impurities. Theoretical simulations using a modified Anderson impurity model integrated with a gapless quantum spin liquid show that these resonance peaks are consistent with a Kondo resonance induced by spinons combined with spinon-chargon binding effects that arise due to QSL gauge-field fluctuations. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Journal ref: Nature Physics 18, 1335 (2022)

Gate-tunable artificial nucleus in graphene

Authors: Mykola Telychko, Keian Noori, Hillol Biswas, Dikshant Dulal, Pin Lyu, Jing Li, Hsin-Zon Tsai, Hanyan Fang, Zhizhan Qiu, Zhun Wai Yap, Kenji Watanabe, Takashi Taniguchi, Michael F. Crommie, Aleksandr Rodin, Jiong Lu

Abstract: We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the characteristic resonance state in the conduction band, revealing a giant carrier-dependent energetic renormalization up to 350 meV with respect to the Di… ▽ More We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the characteristic resonance state in the conduction band, revealing a giant carrier-dependent energetic renormalization up to 350 meV with respect to the Dirac point, accompanied by the observation of long-range screening effects. Joint density functional theory and tight-binding calculations with modified perturbation potential corroborate experimental findings and highlight the short-range character of N-induced perturbation. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Imaging reconfigurable molecular concentration on a graphene field-effect transistor

Authors: Franklin Liou, Hsin-Zon Tsai, Andrew S. Aikawa, Kyler C. Natividad, Eric Tang, Ethan Ha, Alexander Riss, Kenji Watanabe, Takashi Taniguchi, Johannes Lischner, Alex Zettl, Michael F. Crommie

Abstract: The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was ach… ▽ More The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. The gate-tunable molecular concentration can be explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Molecular surface concentration in this case is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level. △ Less

Submitted 15 September, 2021; originally announced September 2021.

Correlated interlayer exciton insulator in double layers of monolayer WSe2 and moiré WS2/WSe2

Authors: Zuocheng Zhang, Emma C. Regan, Danqing Wang, Wenyu Zhao, Shaoxin Wang, Mohammed Sayyad, Kentaro Yumigeta, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Michael Crommie, Alex Zettl, Michael P. Zaletel, Feng Wang

Abstract: Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a M… ▽ More Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a Mott insulator state at hole density p/p0 = 1, where p0 corresponds to one hole per moiré lattice site. When electrons are added to the Mott insulator in the WS2/WSe2 moiré bilayer and an equal number of holes are injected into the WSe2 monolayer, a new interlayer exciton insulator emerges with the holes in the WSe2 monolayer and the electrons in the doped Mott insulator bound together through interlayer Coulomb interactions. The excitonic insulator is stable up to a critical hole density of ~ 0.5p0 in the WSe2 monolayer, beyond which the system becomes metallic. Our study highlights the opportunities for realizing novel quantum phases in double-layer moiré systems due to the interplay between the moiré flat band and strong interlayer electron interactions. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Tuning color centers at a twisted interface

Authors: Cong Su, Fang Zhang, Salman Kahn, Brian Shevitski, Jingwei Jiang, Chunhui Dai, Alex Ungar, Ji-Hoon Park, Kenji Watanabe, Takashi Taniguchi, Jing Kong, Zikang Tang, Wenqing Zhang, Feng Wang, Michael Crommie, Steven G. Louie, Shaul Aloni, Alex Zettl

Abstract: Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an ultraviolet-emitting single photon emitter can be readily activated and controlled on-demand at the twisted interface of two hexagonal boron nitride flakes. The brightne… ▽ More Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an ultraviolet-emitting single photon emitter can be readily activated and controlled on-demand at the twisted interface of two hexagonal boron nitride flakes. The brightness of the color center can be enhanced by two orders of magnitude by altering the twist angle. Additionally, a brightness modulation of nearly 100% of this color center is achieved by an external voltage. Our ab-initio GW calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale color center patterns using electron beams. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries

Authors: Tiancong Zhu, Wei Ruan, Yan-Qi Wang, Hsin-Zon Tsai, Shuopei Wang, Canxun Zhang, Tianye Wang, Franklin Liou, Kenji Watanabe, Takashi Taniguchi, Jeffrey B. Neaton, Alex Weber-Bargioni, Alex Zettl, Ziqiang Qiu, Guangyu Zhang, Feng Wang, Joel E. Moore, Michael F. Crommie

Abstract: One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed… ▽ More One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory. △ Less

Submitted 20 August, 2021; v1 submitted 9 August, 2021; originally announced August 2021.

Comments: 5 figures

Imaging Generalized Wigner Crystal States in a WSe2/WS2 Moiré Superlattice

Authors: Hongyuan Li, Shaowei Li, Emma C. Regan, Danqing Wang, Wenyu Zhao, Salman Kahn, Kentaro Yumigeta, Mark Blei, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Michael F. Crommie, Feng Wang

Abstract: The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transit… ▽ More The Wigner crystal state, first predicted by Eugene Wigner in 1934, has fascinated condensed matter physicists for nearly 90 years2-14. Studies of two-dimensional (2D) electron gases first revealed signatures of the Wigner crystal in electrical transport measurements at high magnetic fields2-4. More recently optical spectroscopy has provided evidence of generalized Wigner crystal states in transition metal dichalcogenide (TMDC) moiré superlattices. Direct observation of the 2D Wigner crystal lattice in real space, however, has remained an outstanding challenge. Scanning tunneling microscopy (STM) in principle has sufficient spatial resolution to image a Wigner crystal, but conventional STM measurements can potentially alter fragile Wigner crystal states in the process of measurement. Here we demonstrate real-space imaging of 2D Wigner crystals in WSe2/WS2 moiré heterostructures using a novel non-invasive STM spectroscopy technique. We employ a graphene sensing layer in close proximity to the WSe2/WS2 moiré superlattice for Wigner crystal imaging, where local STM tunneling current into the graphene sensing layer is modulated by the underlying electron lattice of the Wigner crystal in the WSe2/WS2 heterostructure. Our measurement directly visualizes different lattice configurations associated with Wigner crystal states at fractional electron fillings of n = 1/3, 1/2, and 2/3, where n is the electron number per site. The n=1/3 and n=2/3 Wigner crystals are observed to exhibit a triangle and a honeycomb lattice, respectively, in order to minimize nearest-neighbor occupations. The n = 1/2 state, on the other hand, spontaneously breaks the original C3 symmetry and forms a stripe structure in real space. Our study lays a solid foundation toward the fundamental understanding of rich Wigner crystal states in WSe2/WS2 moiré heterostructures. △ Less

Submitted 19 June, 2021; originally announced June 2021.

Imaging local discharge cascades for correlated electrons in WS2/WSe2 moiré superlattices

Authors: Hongyuan Li, Shaowei Li, Mit H. Naik, Jingxu Xie, Xinyu Li, Emma Regan, Danqing Wang, Wenyu Zhao, Kentaro Yumigeta, Mark Blei, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Steven G. Louie, Michael F. Crommie, Feng Wang

Abstract: Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractiona… ▽ More Transition metal dichalcogenide (TMD) moiré heterostructures provide an ideal platform to explore the extended Hubbard model1 where long-range Coulomb interactions play a critical role in determining strongly correlated electron states. This has led to experimental observations of Mott insulator states at half filling2-4 as well as a variety of extended Wigner crystal states at different fractional fillings5-9. Microscopic understanding of these emerging quantum phases, however, is still lacking. Here we describe a novel scanning tunneling microscopy (STM) technique for local sensing and manipulation of correlated electrons in a gated WS2/WSe2 moiré superlattice that enables experimental extraction of fundamental extended Hubbard model parameters. We demonstrate that the charge state of local moiré sites can be imaged by their influence on STM tunneling current, analogous to the charge-sensing mechanism in a single-electron transistor. In addition to imaging, we are also able to manipulate the charge state of correlated electrons. Discharge cascades of correlated electrons in the moiré superlattice are locally induced by ramping the STM bias, thus enabling the nearest-neighbor Coulomb interaction (UNN) to be estimated. 2D mapping of the moiré electron charge states also enables us to determine onsite energy fluctuations at different moiré sites. Our technique should be broadly applicable to many semiconductor moiré systems, offering a powerful new tool for microscopic characterization and control of strongly correlated states in moiré superlattices. △ Less

Submitted 16 February, 2021; originally announced February 2021.

Tunable ferromagnetism at non-integer filling of a moiré superlattice

Authors: Guorui Chen, Aaron L. Sharpe, Eli J. Fox, Shaoxin Wang, Bosai Lyu, Lili Jiang, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Michael F. Crommie, M. A. Kastner, Zhiwen Shi, David Goldhaber-Gordon, Yuanbo Zhang, Feng Wang

Abstract: The flat bands resulting from moiré superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have been shown to give rise to fascinating correlated electron phenomena such as correlated insulators and superconductivity. More recently, orbital magnetism associated with correlated Chern insulators was found in this cla… ▽ More The flat bands resulting from moiré superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have been shown to give rise to fascinating correlated electron phenomena such as correlated insulators and superconductivity. More recently, orbital magnetism associated with correlated Chern insulators was found in this class of layered structures centered at integer multiples of n0, the density corresponding to one electron per moiré superlattice unit cell. Here we report the experimental observation of ferromagnetism at fractional filling of a flat Chern band in an ABC-TLG/hBN moirésuperlattice. The ferromagnetic state exhibits prominent ferromagnetic hysteresis behavior with large anomalous Hall resistivity in a broad region of densities, centered in the valence miniband at n = -2.3 n0. This ferromagnetism depends very sensitively on the control parameters in the moiré system: not only the magnitude of the anomalous Hall signal, but also the sign of the hysteretic ferromagnetic response can be modulated by tuning the carrier density and displacement field. Our discovery of electrically tunable ferromagnetism in a moiré Chern band at non-integer filling highlights the opportunities for exploring new correlated ferromagnetic states in moiré heterostructures. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Comments: 12 pages, 4 figures

Non-Covalent Dimerization after Enediyne Cyclization on Au(111)

Authors: Dimas G. de Oteyza, Alejandro Pérez Paz, Yen-Chia Chen, Zahra Pedramrazi, Alexander Riss, Sebastian Wickenburg, Hsin-Zon Tsai, Felix R. Fischer, Michael F. Crommie, Angel Rubio

Abstract: We investigate the thermally-induced cyclization of 1,2 - bis(2 - phenylethynyl)benzene on Au(111) using scanning tunneling microscopy and computer simulations. Cyclization of sterically hindered enediynes is known to proceed via two competing mechanisms in solution: a classic C1 - C6 or a C1 - C5 cyclization pathway. On Au(111) we find that the C1 - C5 cyclization is suppressed and that the C1 -… ▽ More We investigate the thermally-induced cyclization of 1,2 - bis(2 - phenylethynyl)benzene on Au(111) using scanning tunneling microscopy and computer simulations. Cyclization of sterically hindered enediynes is known to proceed via two competing mechanisms in solution: a classic C1 - C6 or a C1 - C5 cyclization pathway. On Au(111) we find that the C1 - C5 cyclization is suppressed and that the C1 - C6 cyclization yields a highly strained bicyclic olefin whose surface chemistry was hitherto unknown. The C1 - C6 product self-assembles into discrete non-covalently bound dimers on the surface. The reaction mechanism and driving forces behind non-covalent association are discussed in light of density functional theory calculations. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Journal ref: J. Am. Chem. Soc. 2016, 138, 10963-10967

Imaging spinon density modulations in a 2D quantum spin liquid

Authors: Wei Ruan, Yi Chen, Shujie Tang, Jinwoong Hwang, Hsin-Zon Tsai, Ryan Lee, Meng Wu, Hyejin Ryu, Salman Kahn, Franklin Liou, Caihong Jia, Andrew Aikawa, Choongyu Hwang, Feng Wang, Yongseong Choi, Steven G. Louie, Patrick A. Lee, Zhi-Xun Shen, Sung-Kwan Mo, Michael F. Crommie

Abstract: Two-dimensional triangular-lattice antiferromagnets are predicted under some conditions to exhibit a quantum spin liquid ground state whose low-energy behavior is described by a spinon Fermi surface. Directly imaging the resulting spinons, however, is difficult due to their fractional, chargeless nature. Here we use scanning tunneling spectroscopy to image spinon density modulations arising from a… ▽ More Two-dimensional triangular-lattice antiferromagnets are predicted under some conditions to exhibit a quantum spin liquid ground state whose low-energy behavior is described by a spinon Fermi surface. Directly imaging the resulting spinons, however, is difficult due to their fractional, chargeless nature. Here we use scanning tunneling spectroscopy to image spinon density modulations arising from a spinon Fermi surface instability in single-layer 1T-TaSe$_2$, a two-dimensional Mott insulator. We first demonstrate the existence of localized spins arranged on a triangular lattice in single-layer 1T-TaSe$_2$ by contacting it to a metallic 1H-TaSe$_2$ layer and measuring the Kondo effect. Subsequent spectroscopic imaging of isolated, single-layer 1T-TaSe$_2$ reveals long-wavelength modulations at Hubbard band energies that reflect spinon density modulations. This allows direct experimental measurement of the spinon Fermi wavevector, in good agreement with theoretical predictions for a 2D quantum spin liquid. These results establish single-layer 1T-TaSe$_2$ as a new platform for studying novel two-dimensional quantum-spin-liquid phenomena. △ Less

Submitted 15 September, 2020; originally announced September 2020.

Visualizing delocalized correlated electronic states in twisted double bilayer graphene

Authors: Canxun Zhang, Tiancong Zhu, Salman Kahn, Shaowei Li, Birui Yang, Charlotte Herbig, Xuehao Wu, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Stefano Cabrini, Alex Zettl, Michael P. Zaletel, Feng Wang, Michael F. Crommie

Abstract: The discovery of interaction-driven insulating and superconducting phases in moiré van der Waals heterostructures has sparked considerable interest in understanding the novel correlated physics of these systems. While a significant number of studies have focused on twisted bilayer graphene, correlated insulating states and a superconductivity-like transition up to 12 K have been reported in recent… ▽ More The discovery of interaction-driven insulating and superconducting phases in moiré van der Waals heterostructures has sparked considerable interest in understanding the novel correlated physics of these systems. While a significant number of studies have focused on twisted bilayer graphene, correlated insulating states and a superconductivity-like transition up to 12 K have been reported in recent transport measurements of twisted double bilayer graphene. Here we present a scanning tunneling microscopy and spectroscopy study of gate-tunable twisted double bilayer graphene devices. We observe splitting of the van Hove singularity peak by ~20 meV at half-filling of the conduction flat band, with a corresponding reduction of the local density of states at the Fermi level. By mapping the tunneling differential conductance we show that this correlated system exhibits energetically split states that are spatially delocalized throughout the different regions in the moiré unit cell, inconsistent with order originating solely from onsite Coulomb repulsion within strongly-localized orbitals. We have performed self-consistent Hartree-Fock calculations that suggest exchange-driven spontaneous symmetry breaking in the degenerate conduction flat band is the origin of the observed correlated state. Our results provide new insight into the nature of electron-electron interactions in twisted double bilayer graphene and related moiré systems. △ Less

Submitted 22 March, 2021; v1 submitted 17 August, 2020; originally announced August 2020.

Comments: 24 pages, 5 figures

Journal ref: Nature Communications 12, 2516 (2021)

Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices

Authors: Hongyuan Li, Shaowei Li, Mit H. Naik, Jingxu Xie, Xinyu Li, Jiayin Wang, Emma Regan, Danqing Wang, Wenyu Zhao, Sihan Zhao, Salman Kahn, Kentaro Yumigeta, Mark Blei, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Alex Zettl, Steven G. Louie, Feng Wang, Michael F. Crommie

Abstract: Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and contr… ▽ More Moiré superlattices in transition metal dichalcogenide (TMD) heterostructures can host novel correlated quantum phenomena due to the interplay of narrow moiré flat bands and strong, long-range Coulomb interactions1-5. However, microscopic knowledge of the atomically-reconstructed moiré superlattice and resulting flat bands is still lacking, which is critical for fundamental understanding and control of the correlated moiré phenomena. Here we quantitatively study the moiré flat bands in three-dimensional (3D) reconstructed WSe2/WS2 moiré superlattices by comparing scanning tunneling spectroscopy (STS) of high quality exfoliated TMD heterostructure devices with ab initio simulations of TMD moiré superlattices. A strong 3D buckling reconstruction accompanied by large in-plane strain redistribution is identified in our WSe2/WS2 moiré heterostructures. STS imaging demonstrates that this results in a remarkably narrow and highly localized K-point moiré flat band at the valence band edge of the heterostructure. A series of moiré flat bands are observed at different energies that exhibit varying degrees of localization. Our observations contradict previous simplified theoretical models but agree quantitatively with ab initio simulations that fully capture the 3D structural reconstruction. Here the strain redistribution and 3D buckling dominate the effective moiré potential and result in moiré flat bands at the Brillouin zone K points. △ Less

Submitted 12 July, 2020; originally announced July 2020.

Ultra-high-resolution imaging of moiré lattices and superstructures using scanning microwave impedance microscopy under ambient conditions

Authors: Kyunghoon Lee, M. Iqbal Bakti Utama, Salman Kahn, Appalakondaiah Samudrala, Nicolas Leconte, Birui Yang, Shuopei Wang, Kenji Watanabe, Takashi Taniguchi, Guangyu Zhang, Alexander Weber-Bargioni, Michael Crommie, Paul D. Ashby, Jeil Jung, Feng Wang, Alex Zettl

Abstract: Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned… ▽ More Two-dimensional heterostructures with layers of slightly different lattice vectors exhibit a new periodic structure known as moire lattices. Moire lattice formation provides a powerful new way to engineer the electronic structure of two-dimensional materials for realizing novel correlated and topological phenomena. In addition, superstructures of moire lattices can emerge from multiple misaligned lattice vectors or inhomogeneous strain distribution, which offers an extra degree of freedom in the electronic band structure design. High-resolution imaging of the moire lattices and superstructures is critical for quantitative understanding of emerging moire physics. Here we report the nanoscale imaging of moire lattices and superstructures in various graphene-based samples under ambient conditions using an ultra-high-resolution implementation of scanning microwave impedance microscopy. We show that, quite remarkably, although the scanning probe tip has a gross radius of ~100 nm, an ultra-high spatial resolution in local conductivity profiles better than 5 nm can be achieved. This resolution enhancement not only enables to directly visualize the moire lattices in magic-angle twisted double bilayer graphene and composite super-moire lattices, but also allows design path toward artificial synthesis of novel moire superstructures such as the Kagome moire from the interplay and the supermodulation between twisted graphene and hexagonal boron nitride layers. △ Less

Submitted 6 June, 2020; originally announced June 2020.

Comments: 16 pages, 5 figures

Journal ref: Science Advances 2020, 6, eabd1919

Imaging electric field dynamics with graphene optoelectronics

Authors: Jason Horng, Halleh B. Balch, Allister F. McGuire, Hsin-Zon Tsai, Patrick R. Forrester, Michael F. Crommie, Bianxiao Cui, Feng Wang

Abstract: The use of electric fields for signalling and control in liquids is widespread, spanning bioelectric activity in cells to electrical manipulation of microstructures in lab-on-a-chip devices. However, an appropriate tool to resolve the spatio-temporal distribution of electric fields over a large dynamic range has yet to be developed. Here we present a label-free method to image local electric field… ▽ More The use of electric fields for signalling and control in liquids is widespread, spanning bioelectric activity in cells to electrical manipulation of microstructures in lab-on-a-chip devices. However, an appropriate tool to resolve the spatio-temporal distribution of electric fields over a large dynamic range has yet to be developed. Here we present a label-free method to image local electric fields in real time and under ambient conditions. Our technique combines the unique gate-variable optical transitions of graphene with a critically coupled planar waveguide platform that enables highly sensitive detection of local electric fields with a voltage sensitivity of a few microvolts, a spatial resolution of tens of micrometres and a frequency response over tens of kilohertz. Our imaging platform enables parallel detection of electric fields over a large field of view and can be tailored to broad applications spanning lab-on-a-chip device engineering to analysis of bioelectric phenomena. △ Less

Submitted 20 November, 2019; originally announced November 2019.

Comments: 9 pages, 5 figures, supplement can be found at 10.1038/ncomms13704

Journal ref: Nat Commun 7, 13704 (2016)

Inducing Metallicity in Graphene Nanoribbons via Zero-Mode Superlattices

Authors: Daniel J. Rizzo, Gregory Veber, Jingwei Jiang, Ryan McCurdy, Ting Cao, Christopher Bronner, Ting Chen, Steven G. Louie, Felix R. Fischer, Michael F. Crommie

Abstract: The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned at nanometer length scales. Recent developments in bottom-up synthesis have enabled the design and characterization of atomically-precise GNRs, but strategies fo… ▽ More The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned at nanometer length scales. Recent developments in bottom-up synthesis have enabled the design and characterization of atomically-precise GNRs, but strategies for realizing GNR metallicity have been elusive. Here we demonstrate a general technique for inducing metallicity in GNRs by inserting a symmetric superlattice of zero-energy modes into otherwise semiconducting GNRs. We verify the resulting metallicity using scanning tunneling spectroscopy as well as first-principles density-functional theory and tight binding calculations. Our results reveal that the metallic bandwidth in GNRs can be tuned over a wide range by controlling the overlap of zero-mode wavefunctions through intentional sublattice symmetry-breaking. △ Less

Submitted 1 November, 2019; originally announced November 2019.

Comments: The first three authors listed contributed equally

Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

Authors: Emma C. Regan, Danqing Wang, Chenhao Jin, M. Iqbal Bakti Utama, Beini Gao, Xin Wei, Sihan Zhao, Wenyu Zhao, Kentaro Yumigeta, Mark Blei, Johan Carlstroem, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Michael Crommie, Alex Zettl, Feng Wang

Abstract: Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures pro… ▽ More Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures provide another exciting model system to explore correlated quantum phenomena, with the addition of strong light-matter interactions and large spin-orbital coupling. Here we report the optical detection of strongly correlated phases in semiconducting WSe2/WS2 moiré superlattices. Our sensitive optical detection technique reveals a Mott insulator state at one hole per superlattice site (ν = 1), and surprising insulating phases at fractional filling factors ν = 1/3 and 2/3, which we assign to generalized Wigner crystallization on an underlying lattice. Furthermore, the unique spin-valley optical selection rules of TMDC heterostructures allow us to optically create and investigate low-energy spin excited states in the Mott insulator. We reveal an especially slow spin relaxation lifetime of many microseconds in the Mott insulating state, orders-of-magnitude longer than that of charge excitations. Our studies highlight novel correlated physics that can emerge in moiré superlattices beyond graphene. △ Less

Submitted 20 October, 2019; originally announced October 2019.

Comments: 25 pages, 7 figures

Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2

Authors: Yi Chen, Wei Ruan, Meng Wu, Shujie Tang, Hyejin Ryu, Hsin-Zon Tsai, Ryan Lee, Salman Kahn, Franklin Liou, Caihong Jia, Oliver R. Albertini, Hongyu Xiong, Tao Jia, Zhi Liu, Jonathan A. Sobota, Amy Y. Liu, Joel E. Moore, Zhi-Xun Shen, Steven G. Louie, Sung-Kwan Mo, Michael F. Crommie

Abstract: Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe… ▽ More Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions. △ Less

Submitted 16 May, 2019; v1 submitted 24 April, 2019; originally announced April 2019.

Journal ref: Nature Physics 16, 218-224 (2020)

Electrons imitating light: Frustrated supercritical collapse in charged arrays on graphene

Authors: Jiong Lu, Hsin-Zon Tsai, Alpin N. Tatan, Sebastian Wickenburg, Arash A. Omrani, Dillon Wong, Alexander Riss, Erik Piatti, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Vitor M. Pereira, Michael F. Crommie

Abstract: The photon-like electronic dispersion of graphene bestows its charge carriers with unusual confinement properties that depend strongly on the geometry and strength of the surrounding potential. Here we report bottom-up synthesis of atomically-precise one-dimensional (1D) arrays of point charges aimed at exploring supercritical confinement of carriers in graphene for new geometries. The arrays were… ▽ More The photon-like electronic dispersion of graphene bestows its charge carriers with unusual confinement properties that depend strongly on the geometry and strength of the surrounding potential. Here we report bottom-up synthesis of atomically-precise one-dimensional (1D) arrays of point charges aimed at exploring supercritical confinement of carriers in graphene for new geometries. The arrays were synthesized by arranging F4TCNQ molecules into a 1D lattice on back-gated graphene devices, allowing precise tuning of both the molecular charge state and the array periodicity. Dilute arrays of ionized F4TCNQ molecules are seen to behave like isolated subcritical charges but dense arrays show emergent supercriticality. In contrast to compact supercritical clusters, extended 1D charge arrays exhibit both supercritical and subcritical characteristics and belong to a new physical regime termed frustrated supercritical collapse. Here carriers in the far-field are attracted by a supercritical charge distribution, but have their fall to the center frustrated by subcritical potentials in the near-field, similar to the trapping of light by a dense cluster of stars in general relativity. △ Less

Submitted 10 December, 2018; originally announced December 2018.

Journal ref: Nature Communications 10, 477 (2019)

Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

Authors: Dillon Wong, Yang Wang, Wuwei Jin, Hsin-Zon Tsai, Aaron Bostwick, Eli Rotenberg, Roland K. Kawakami, Alex Zettl, Arash A. Mostofi, Johannes Lischner, Michael F. Crommie

Abstract: We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experim… ▽ More We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene. △ Less

Submitted 24 October, 2018; originally announced October 2018.

Comments: 5 figures

Journal ref: Phys. Rev. B 98, 155436 (2018)

Simulating the nanomechanical response of cyclooctatetraene molecules on a graphene device

Authors: Sehoon Oh, Michael F. Crommie, Marvin L. Cohen

Abstract: We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding or removing electrons using density functional theory (DFT) calculations. This allows us to investigate how changes in carrier density modify the molecular sha… ▽ More We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding or removing electrons using density functional theory (DFT) calculations. This allows us to investigate how changes in carrier density modify the molecular shape, orientation, adsorption site, diffusion barrier, and diffusion path. For increased hole doping COT molecules gradually change their shape to a more flattened conformation and the distance between the molecules and graphene increases while the diffusion barrier drastically decreases. For increased electron doping an abrupt transition to a planar conformation at a carrier density of -8$\times$10$^{13}$ e/cm$^2$ is observed. These calculations imply that the shape and mobility of adsorbed COT molecules can be controlled by externally gating graphene devices. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Authors: Sara Barja, Sivan Refaely-Abramson, Bruno Schuler, Diana Y. Qiu, Artem Pulkin, Sebastian Wickenburg, Hyejin Ryu, Miguel M. Ugeda, Christoph Kastl, Christopher Chen, Choongyu Hwang, Adam Schwartzberg, Shaul Aloni, Sung-Kwan Mo, D. Frank Ogletree, Michael F. Crommie, Oleg V. Yazyev, Steven G. Louie, Jeffrey B. Neaton, Alexander Weber-Bargioni

Abstract: Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scan… ▽ More Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies. △ Less

Submitted 6 March, 2020; v1 submitted 8 October, 2018; originally announced October 2018.

Journal ref: Nat Commun 10, 3382 (2019)

Visualization and Control of Single Electron Charging in Bilayer Graphene Quantum Dots

Authors: Jairo Velasco Jr., Juwon Lee, Dillon Wong, Salman Kahn, Hsin-Zon Tsai, Joseph Costello, Torben Umeda, Takashi Taniguchi, Kenji Watanabe, Alex Zettl, Feng Wang, Michael F. Crommie

Abstract: Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer graphene also hosts Dirac fermions, but they differ from single-layer graphene charge carriers because they are massive, can be gapped by an applied perpendicular elec… ▽ More Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer graphene also hosts Dirac fermions, but they differ from single-layer graphene charge carriers because they are massive, can be gapped by an applied perpendicular electric field, and have very different pseudospin selection rules across a p-n junction. Novel phenomena predicted for these massive Dirac fermions at p-n junctions include anti-Klein tunneling, oscillatory Zener tunneling, and electron cloaked states. Despite these predictions there has been little experimental focus on the microscopic spatial behavior of massive Dirac fermions in the presence of p-n junctions. Here we report the experimental manipulation and characterization of massive Dirac fermions within bilayer graphene quantum dots defined by circular p-n junctions through the use of scanning tunneling microscopy-based (STM) methods. Our p-n junctions are created via a flexible technique that enables realization of exposed quantum dots in bilayer graphene/hBN heterostructures. These quantum dots exhibit sharp spectroscopic resonances that disperse in energy as a function of applied gate voltage. Spatial maps of these features show prominent concentric rings with diameters that can be tuned by an electrostatic gate. This behavior is explained by single-electron charging of localized states that arise from the quantum confinement of massive Dirac fermions within our exposed bilayer graphene quantum dots. △ Less

Submitted 13 September, 2018; originally announced September 2018.

Journal ref: Nano Lett., 2018, 18 (8), 5104

Topological Band Engineering of Graphene Nanoribbons

Authors: Daniel J. Rizzo, Gregory Veber, Ting Cao, Christopher Bronner, Ting Chen, Fangzhou Zhao, Henry Rodriguez, Steven G. Louie Michael F. Crommie, Felix R. Fischer

Abstract: Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phase… ▽ More Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally-confined, semiconducting strips of graphene is determined by their width, edge shape, and the terminating unit cell, and is characterized by a Z2 invariant (similar to 1D solitonic systems). Interfaces between topologically distinct GNRs characterized by different Z2 are predicted to support half-filled in-gap localized electronic states which can, in principle, be utilized as a tool for material engineering. Here we present the rational design and experimental realization of a topologically-engineered GNR superlattice that hosts a 1D array of such states, thus generating otherwise inaccessible electronic structure. This strategy also enables new end states to be engineered directly into the termini of the 1D GNR superlattice. Atomically-precise topological GNR superlattices were synthesized from molecular precursors on a Au(111) surface under ultra-high vacuum (UHV) conditions and characterized by low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Our experimental results and first-principles calculations reveal that the frontier band structure of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This novel manifestation of 1D topological phases presents an entirely new route to band engineering in 1D materials based on precise control of their electronic topology, and is a promising platform for future studies of 1D quantum spin physics. △ Less

Submitted 16 May, 2018; originally announced May 2018.

Comments: Contains main manuscript and supplemental information

Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2

Authors: Miguel M. Ugeda, Artem Pulkin, Shujie Tang, Hyejin Ryu, Quansheng Wu, Yi Zhang, Dillon Wong, Zahra Pedramrazi, Ana Martín-Recio, Yi Chen, Feng Wang, Zhi-Xun Shen, Sung-Kwan Mo, Oleg V. Yazyev, Michael F. Crommie

Abstract: Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallograp… ▽ More Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallographically-aligned interface between quantum a spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers grown using molecular beam epitaxy (MBE). The QSHI nature of single-layer 1T'-WSe2 was verified using ARPES to determine band inversion around a 120 meV energy gap, as well as STM spectroscopy to directly image helical edge-state formation. Using this new edge-state geometry we are able to directly confirm the predicted penetration depth of a helical interface state into the 2D bulk of a QSHI for a well-specified crystallographic direction. The clean, well-ordered topological/trivial interfaces observed here create new opportunities for testing predictions of the microscopic behavior of topologically protected boundary states without the complication of structural disorder. △ Less

Submitted 7 November, 2018; v1 submitted 5 February, 2018; originally announced February 2018.

Comments: https://www.nature.com/articles/s41467-018-05672-w

Journal ref: Nature Communications 9, 3401 (2018)

Hierarchical On-Surface Synthesis of Deterministic Graphene Nanoribbon Heterojunctions

Authors: Christopher Bronner, Rebecca A. Durr, Daniel J. Rizzo, Yea-Lee Lee, Tomas Marangoni, Alin Miksi Kalayjian, Henry Rodriguez, William Zhao, Steven G. Louie, Felix R. Fischer, Michael F. Crommie

Abstract: Bottom-up graphene nanoribbon (GNR) heterojunctions are nanoscale strips of graphene whose electronic structure abruptly changes across a covalently bonded interface. Their rational design offers opportunities for profound technological advancements enabled by their extraordinary structural and electronic properties. Thus far the most critical aspect of their synthesis, the control over sequence a… ▽ More Bottom-up graphene nanoribbon (GNR) heterojunctions are nanoscale strips of graphene whose electronic structure abruptly changes across a covalently bonded interface. Their rational design offers opportunities for profound technological advancements enabled by their extraordinary structural and electronic properties. Thus far the most critical aspect of their synthesis, the control over sequence and position of heterojunctions along the length of a ribbon, has been plagued by randomness in monomer sequences emerging from step-growth copolymerization of distinct monomers. All bottom-up GNR heterojunction structures created so far have exhibited random sequences of heterojunctions and, while useful for fundamental scientific studies, are difficult to incorporate into functional nanodevices as a result. Here we describe a new hierarchical fabrication strategy that allows deterministic growth of bottom-up GNRs that preferentially exhibit a single heterojunction interface rather than a random statistical sequence of junctions along the ribbon. Such heterojunctions provide a viable new platform that could be directly used in functional GNR-based device applications at the molecular scale. Our hierarchical GNR fabrication strategy is based on differences in the dissociation energies of C-Br and C-I bonds that allow control over the growth sequence of the block-copolymers from which GNRs are formed, and consequently yields a significantly higher proportion of single-junction GNR heterostructures. Scanning tunnelling spectroscopy and density functional theory calculations confirm that hierarchically-grown heterojunctions between chevron GNR (cGNR) and binaphthyl-cGNR segments exhibit straddling Type I band alignment in structures that are only one atomic layer thick and 3 nm in width. △ Less

Submitted 15 November, 2017; originally announced November 2017.

Comments: Contains main manuscript (p. 1-16) and supplementary information (p. 17-50)

Spatially resolving density-dependent screening around a single charged atom in graphene

Authors: Dillon Wong, Fabiano Corsetti, Yang Wang, Victor W. Brar, Hsin-Zon Tsai, Qiong Wu, Roland K. Kawakami, Alex Zettl, Arash A. Mostofi, Johannes Lischner, Michael F. Crommie

Abstract: Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated gr… ▽ More Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated graphene device configuration has allowed us to directly visualize how the screening length for this system can be tuned with carrier density. Our results provide insight into electron-impurity and electron-electron interactions in a relativistic setting with important consequences for other graphene-based electronic devices. △ Less

Submitted 17 May, 2017; originally announced May 2017.

Comments: 4 figures

Journal ref: Phys. Rev. B 95, 205419 (2017)

Iodine versus Bromine Functionalization for Bottom-Up Graphene Nanoribbon Growth: Role of Diffusion

Authors: Christopher Bronner, Tomas Marangoni, Daniel J. Rizzo, Rebecca Durr, Jakob Holm Jørgensen, Felix R. Fischer, Michael F. Crommie

Abstract: Deterministic bottom-up approaches for synthesizing atomically well-defined graphene nanoribbons (GNRs) largely rely on the surface-catalyzed activation of selected labile bonds in a molecular precursor followed by step growth polymerization and cyclodehydrogenation. While the majority of successful GNR precursors rely on the homolytic cleavage of thermally labile C-Br bonds, the introduction of w… ▽ More Deterministic bottom-up approaches for synthesizing atomically well-defined graphene nanoribbons (GNRs) largely rely on the surface-catalyzed activation of selected labile bonds in a molecular precursor followed by step growth polymerization and cyclodehydrogenation. While the majority of successful GNR precursors rely on the homolytic cleavage of thermally labile C-Br bonds, the introduction of weaker C-I bonds provides access to monomers that can be polymerized at significantly lower temperatures, thus helping to increase the flexibility of the GNR synthesis process. Scanning tunneling microscopy (STM) imaging of molecular precursors, activated intermediates, and polymers resulting from stepwise thermal annealing of both Br and I substituted precursors for chevron GNRs reveals that the polymerization of both precursors proceeds at similar temperatures on Au(111). This observation is consistent with diffusion-limited polymerization of the surface-stabilized radical intermediates that emerge from homolytic cleavage of either the C-Br or the C-I bonds. △ Less

Submitted 27 March, 2017; originally announced March 2017.

Comments: 23 pages, 5 figures

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

Authors: Shujie Tang, Chaofan Zhang, Dillon Wong, Zahra Pedramrazi, Hsin-Zon Tsai, Chunjing Jia, Brian Moritz, Martin Claassen, Hyejin Ryu, Salman Kahn, Juan Jiang, Hao Yan, Makoto Hashimoto, Donghui Lu, Robert G. Moore, Chancuk Hwang, Choongyu Hwang, Zahid Hussain, Yulin Chen, Miguel M. Ugeda, Zhi Liu, Xiaoming Xie, Thomas P. Devereaux, Michael F. Crommie, Sung-Kwan Mo , et al. (1 additional authors not shown)

Abstract: A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using ang… ▽ More A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first principle calculations, we observe clear signatures of the topological band inversion and the band gap opening, which are the hallmarks of a QSH state. Scanning tunneling microscopy measurements further confirm the correct crystal structure and the existence of a bulk band gap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs). △ Less

Submitted 9 March, 2017; originally announced March 2017.

Comments: 19 pages, 4 figures; includes Supplemental Material (11 pages, 7 figures)

Imaging structural transitions in organometallic molecules on Ag(100) for solar thermal energy storage

Authors: Jongweon Cho, Ivan V. Pechenezhskiy, Luis Berbil-Bautista, Steven K. Meier, K. Peter C. Vollhardt, Michael F. Crommie

Abstract: The use of opto-thermal molecular energy storage at the nanoscale creates new opportunities for powering future microdevices with flexible synthetic tailorability. Practical application of these molecular materials, however, requires a deeper microscopic understanding of how their behavior is altered by the presence of different types of substrates. Here we present single-molecule resolved scannin… ▽ More The use of opto-thermal molecular energy storage at the nanoscale creates new opportunities for powering future microdevices with flexible synthetic tailorability. Practical application of these molecular materials, however, requires a deeper microscopic understanding of how their behavior is altered by the presence of different types of substrates. Here we present single-molecule resolved scanning tunneling microscopy imaging of thermally- and optically-induced structural transitions in (fulvalene)tetracarbonyldiruthenium molecules adsorbed onto a Ag(100) surface as a prototype system. Both the parent complex and the photoisomer display distinct thermally-driven phase transformations when they are in contact with a Ag(100) surface. This behavior is consistent with the loss of carbonyl ligands due to strong molecule-surface coupling. Ultraviolet radiation induces marked structural changes only in the intact parent complex, thus indicating a photoisomerization reaction. These results demonstrate how stimuli-induced structural transitions in this class of molecule depend on the nature of the underlying substrate. △ Less

Submitted 28 February, 2017; originally announced March 2017.

Comments: 4 figures

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

Authors: Jonghwan Kim, Chenhao Jin, Bin Chen, Hui Cai, Tao Zhao, Puiyee Lee, Salman Kahn, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Michael F. Crommie, Feng Wang

Abstract: The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcoginides (TMD) is expected to be remarkably long due to the unique spin-valley locking behavior, where the inter-valley scattering of electron requires simultaneously a large momentum transfer to th… ▽ More The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcoginides (TMD) is expected to be remarkably long due to the unique spin-valley locking behavior, where the inter-valley scattering of electron requires simultaneously a large momentum transfer to the opposite valley and a flip of the electron spin. The experimentally observed valley lifetime in 2D TMDs, however, has been limited to tens of nanoseconds so far. Here we report efficient generation of microsecond-long lived valley polarization in WSe2/MoS2 heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe2 layer. These valley-polarized holes exhibit near unity valley polarization and ultralong valley lifetime: we observe a valley-polarized hole population lifetime of over 1 us, and a valley depolarization lifetime (i.e. inter-valley scattering lifetime) over 40 us at 10 Kelvin. The near-perfect generation of valley-polarized holes in TMD heterostructures with ultralong valley lifetime, orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications. △ Less

Submitted 15 December, 2016; originally announced December 2016.

Comments: 21 pages, 6 figures, Jonghwan Kim and Chenhao Jin contributed equally to this work

Imaging electrostatically confined Dirac fermions in graphene quantum dots

Authors: Juwon Lee, Dillon Wong, Jairo Velasco Jr., Joaquin F. Rodriguez-Nieva, Salman Kahn, Hsin-Zon Tsai, Takashi Taniguchi, Kenji Watanabe, Alex Zettl, Feng Wang, Leonid S. Levitov, Michael F. Crommie

Abstract: Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and transmission at these novel potential barriers should affect the quantum interference of electronic wavefunctions near these boundaries. Here we report the use… ▽ More Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and transmission at these novel potential barriers should affect the quantum interference of electronic wavefunctions near these boundaries. Here we report the use of scanning tunneling microscopy (STM) to map the electronic structure of Dirac fermions confined by circular graphene pn junctions. These effective quantum dots were fabricated using a new technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe energy levels corresponding to quasi-bound states and we spatially visualize the quantum interference patterns of confined electrons. Dirac fermions outside these quantum dots exhibit Friedel oscillation-like behavior. Bolstered with a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield new insight into the spatial behavior of electrostatically confined Dirac fermions. △ Less

Submitted 11 June, 2016; originally announced June 2016.

Comments: 4 figures