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Exciton self-trapping in twisted hexagonal boron nitride homostructures
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Alexandre Plaud,
Lei Ren,
Eli Janzen,
James H. Edgar,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Cédric Robert,
Xavier Marie,
Annick Loiseau,
Julien Barjon
Abstract:
One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between…
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One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence (CL) and time-resolved CL experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a self-trapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes a broad optical emission of highly twisted hBN-hBN structures around 300 nm (4 eV). Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and their compact excitons.
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Submitted 15 May, 2024;
originally announced May 2024.
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Direct observation and control of near-field radiative energy transfer in a natural hyperbolic material
Authors:
L. Abou-Hamdan,
A. Schmitt,
R. Bretel,
S. Rossetti,
M. Tharrault,
D. Mele,
A. Pierret,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
C. Maestre,
C. Journet,
B. Toury,
V. Garnier,
P. Steyer,
J. H. Edgar,
E. Janzen,
J-M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J-P. Hugonin,
E. Bailly,
B. Vest
, et al. (4 additional authors not shown)
Abstract:
Heat control is a key issue in nano-electronics, where new efficient energy transfer mechanisms are highly sought after. In this respect, there is indirect evidence that high-mobility hexagonal boron nitride (hBN)-encapsulated graphene exhibits hyperbolic out-of-plane radiative energy transfer when driven out-of-equilibrium. Here we directly observe radiative energy transfer due to the hyperbolic…
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Heat control is a key issue in nano-electronics, where new efficient energy transfer mechanisms are highly sought after. In this respect, there is indirect evidence that high-mobility hexagonal boron nitride (hBN)-encapsulated graphene exhibits hyperbolic out-of-plane radiative energy transfer when driven out-of-equilibrium. Here we directly observe radiative energy transfer due to the hyperbolic phonon polaritons modes of the hBN encapsulant in intrinsic graphene devices under large bias, using mid-infrared spectroscopy and pyrometry. By using different hBN crystals of varied crystalline quality, we engineer the energy transfer efficiency, a key asset for compact thermal management of electronic circuits.
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Submitted 14 November, 2023; v1 submitted 12 October, 2023;
originally announced October 2023.
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Surface recombination and out of plane diffusivity of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Etienne Carré,
Eli Janzen,
James H. Edgard,
Camille Maestre,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
Annick Loiseau,
Julien Barjon
Abstract:
We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at…
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We present a novel experimental protocol using Cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of 2D materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 cm$^{2}$.s$^{-1}$. Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds 10$^{5}$ cm$^{2}$.s$^{-1}$, at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.
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Submitted 11 August, 2023; v1 submitted 10 August, 2023;
originally announced August 2023.
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From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices
Authors:
Camille Maestre,
Yangdi Li,
Vincent Garnier,
Philippe Steyer,
Sébastien Roux,
Alexandre Plaud,
Annick Loiseau,
Julien Barjon,
Lei Ren,
Cédric Robert,
Bo Han,
Xavier Marie,
Catherine Journet,
Bérangère Toury
Abstract:
In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices.…
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In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are relevant for future opto-electronic applications.
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Submitted 19 January, 2022;
originally announced January 2022.
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Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
Authors:
A. Pierret,
D. Mele,
H. Graef,
J. Palomo,
T. Taniguchi,
K. Watanabe,
Y. Li,
B. Toury,
C. Journet,
P. Steyer,
V. Garnier,
A. Loiseau,
J-M. Berroir,
E. Bocquillon,
G. Fève,
C. Voisin,
E. Baudin,
M. Rosticher,
B. Plaçais
Abstract:
In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm…
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In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics.
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Submitted 28 January, 2022; v1 submitted 15 January, 2022;
originally announced January 2022.
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Radiative lifetime of free excitons in hexagonal boron nitride
Authors:
Sébastien Roux,
Christophe Arnold,
Fulvio Paleari,
Lorenzo Sponza,
Eli Janzen,
James H. Edgar,
Bérangère Toury,
Catherine Journet,
Vincent Garnier,
Philippe Steyer,
Takashi Taniguchi,
Kenji Watanabe,
François Ducastelle,
Annick Loiseau,
Julien Barjon
Abstract:
Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect…
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Using a new time-resolved cathodoluminescence system dedicated to the UV spectral range, we present a first estimate of the radiative lifetime of free excitons in hBN at room temperature. This is carried out from a single experiment giving both the absolute luminescence intensity under continuous excitation and the decay time of free excitons in the time domain. The radiative lifetime of indirect excitons in hBN is equal to 27 ns, which is much shorter than in other indirect bandgap semiconductors. This is explained by the close proximity of the electron and the hole in the exciton complex, and also by the small energy difference between indirect and direct excitons. The unusually high luminescence efficiency of hBN for an indirect bandgap is therefore semi-quantitatively understood.
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Submitted 2 July, 2021;
originally announced July 2021.
