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Vortex dynamics in the two-dimensional BCS-BEC crossover
Authors:
Max Heyl,
Kyosuke Adachi,
Yuki M. Itahashi,
Yuji Nakagawa,
Yuichi Kasahara,
Emil J. W. List-Kratochvil,
Yusuke Kato,
Yoshihiro Iwasa
Abstract:
The Bardeen-Cooper-Schrieffer (BCS) condensation and Bose-Einstein condensation (BEC) are the two limiting ground states of paired Fermion systems, and the crossover between these two limits has been a source of excitement for both fields of high temperature superconductivity and cold atom superfluidity. For superconductors, ultra-low doping systems like graphene and LixZrNCl successfully approach…
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The Bardeen-Cooper-Schrieffer (BCS) condensation and Bose-Einstein condensation (BEC) are the two limiting ground states of paired Fermion systems, and the crossover between these two limits has been a source of excitement for both fields of high temperature superconductivity and cold atom superfluidity. For superconductors, ultra-low doping systems like graphene and LixZrNCl successfully approached the crossover starting from the BCS-side. These superconductors offer new opportunities to clarify the nature of charged-particles transport towards the BEC regime. Here we report the study of vortex dynamics within the crossover using their Hall effect as a probe in LixZrNCl. We observed a systematic enhancement of the Hall angle towards the BCS-BEC crossover, which was qualitatively reproduced by the phenomenological time-dependent Ginzburg-Landau (TDGL) theory. LixZrNCl exhibits a band structure free from various electronic instabilities, allowing us to achieve a comprehensive understanding of the vortex Hall effect and thereby propose a global picture of vortex dynamics within the crossover. These results demonstrate that gate-controlled superconductors are ideal platforms towards investigations of unexplored properties in BEC superconductors.
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Submitted 11 September, 2022;
originally announced September 2022.
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Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors
Authors:
Somayeh Saadat Niavol,
Melanie Budde,
Alexandra Papadogianni,
Martin Heilmann,
Hossain Milani Moghaddam,
Celso M. Aldao,
Giovanni Ligorio,
Emil J. W. List-Kratochvil,
Joao Marcelo J. Lopes,
Nicolae Barsan,
Oliver Bierwagen,
Federico Schipani
Abstract:
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the…
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Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases.
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Submitted 6 October, 2020;
originally announced October 2020.
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Monotonic and cyclic mechanical reliability of metallization lines on polymer substrates
Authors:
Oleksandr Glushko,
Andreas Klug,
Emil J. W. List-Kratochvil,
Megan J. Cordill
Abstract:
Mechanical stability of Ag and Cu printed and evaporated metallization lines on polymer substrates is investigated by means of monotonic tensile and cyclic bending tests. It is shown that lines which demonstrate good performance during monotonic tests fail at lower strains during a cyclic bending tests. Evaporated lines with the grain size of several hundreds of nanometers have good ductility and…
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Mechanical stability of Ag and Cu printed and evaporated metallization lines on polymer substrates is investigated by means of monotonic tensile and cyclic bending tests. It is shown that lines which demonstrate good performance during monotonic tests fail at lower strains during a cyclic bending tests. Evaporated lines with the grain size of several hundreds of nanometers have good ductility and consequently good stability during monotonic loading but at the same time they fail at low strains during cyclic bending. Printed lines with nanocrystalline microstructure, in contrast, demonstrate more intensive cracking during monotonic loading but higher failure strains during cyclic bending. Apart from the grain size effect, the effect of film thickness on the saturation crack density after cyclic bending is also demonstrated. Thinner films have higher crack density in accordance with the shear lag model.
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Submitted 9 April, 2019;
originally announced April 2019.
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Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors
Authors:
Riccardo Di Pietro,
Deepak Venkateshvaran,
Andreas Klug,
Emil J. W. List-Kratochvil,
Antonio Facchetti,
Henning Sirringhaus,
Dieter Neher
Abstract:
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determin…
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A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials.
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Submitted 21 February, 2014;
originally announced February 2014.
