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Atomic multiplet and charge-transfer screening effects in 1$s$ and 2$p$ core-level X-ray photoelectron spectra of early 3$d$ transition-metal oxides
Authors:
Tatsuya Yamaguchi,
Keisuke Higashi,
Anna Regoutz,
Yoshihiro Takahashi,
Masoud Lazemi,
Qijun Che,
Frank M. F. de Groot,
Atsushi Hariki
Abstract:
We present a comparative analysis of 1$s$ and 2$p$ core-level hard X-ray photoelectron spectroscopy (HAXPES) spectra in metallic VO$_2$ and CrO$_2$. Even though the V 1$s$ and 2$p$ spectra in VO$_2$ display similar line shapes except the absence or presence of a spin-orbit coupling splitting, the Cr 1$s$ and 2$p$ spectra exhibit distinct main-line shapes. The experimental HAXPES spectra are analyz…
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We present a comparative analysis of 1$s$ and 2$p$ core-level hard X-ray photoelectron spectroscopy (HAXPES) spectra in metallic VO$_2$ and CrO$_2$. Even though the V 1$s$ and 2$p$ spectra in VO$_2$ display similar line shapes except the absence or presence of a spin-orbit coupling splitting, the Cr 1$s$ and 2$p$ spectra exhibit distinct main-line shapes. The experimental HAXPES spectra are analyzed by the Anderson impurity model based on the density functional theory + dynamical mean-field theory and a conventional MO$_6$ cluster model. We elucidate the complex interplay between formation of the intra-atomic multiplet and charge transfer effect on the chemical bonding followed by the 1$s$ and 2$p$ core electron excitations. We demonstrate the advantage of the 1$s$ excitations to the routinely-employed 2$p$ excitations for distinguishing between metal-ligand and metal-metal charge transfer contributions in early 3$d$ transition-metal oxides.
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Submitted 22 May, 2024; v1 submitted 25 January, 2024;
originally announced January 2024.
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Stability of near surface nitrogen vacancy centers using dielectric surface passivation
Authors:
Ravi Kumar,
Saksham Mahajan,
Felix Donaldson,
Siddharth Dhomkar,
Hector J. Lancaster,
Curran Kalha,
Aysha A. Riaz,
Yujiang Zhu,
Christopher A. Howard,
Anna Regoutz,
John J. L. Morton
Abstract:
We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using Raman and X…
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We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using Raman and X-ray photoelectron spectroscopies suggests a surface reconstruction: In air, atmospheric oxygen adsorption on surface leads to an increase in NV- fraction, whereas in vacuum, net oxygen desorption increases the NV0 fraction. NV charge state switching is confirmed by photoluminescence spectroscopy. Deposition of ~ 2 nm alumina (Al2O3) over the diamond surface was shown to stabilize the NV charge state under illumination in either environment, attributed to a more stable surface electronegativity. The use of alumina coating on diamond is therefore a promising approach to improve the resilience of NV sensors.
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Submitted 23 November, 2023;
originally announced November 2023.
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Revealing the bonding nature and electronic structure of early transition metal dihydrides
Authors:
Curran Kalha,
Laura E. Ratcliff,
Giorgio Colombi,
Christoph Schlueter,
Bernard Dam,
Andrei Gloskovskii,
Tien-Lin Lee,
Pardeep K. Thakur,
Prajna Bhatt,
Yujiang Zhu,
Jürg Osterwalder,
Francesco Offi,
Giancarlo Panaccione,
Anna Regoutz
Abstract:
Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understand…
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Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understanding the electronic structure and chemical environment of hydrogen within them remains a key challenge. This work presents a new analytical pathway to explore these aspects in technologically relevant systems using Hard X-ray Photoelectron Spectroscopy (HAXPES) on thin films of two prototypical metal dihydrides: YH$_{2-δ}$ and TiH$_{2-δ}$. By taking advantage of the tunability of synchrotron radiation, a non-destructive depth profile of the chemical states is obtained using core level spectra. Combining experimental valence band spectra collected at varying photon energies with theoretical insights from density functional theory (DFT) calculations, a description of the bonding nature and the role of d versus sp contributions to states near the Fermi energy are provided. Moreover, a reliable determination of the enthalpy of formation is proposed by using experimental values of the energy position of metal s band features close to the Fermi energy in the HAXPES valence band spectra.
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Submitted 25 May, 2023;
originally announced May 2023.
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Capturing the dynamics of Ti diffusion across Ti$_x$W$_{1-x}$/Cu heterostructures using X-ray photoelectron spectroscopy
Authors:
Curran Kalha,
Pardeep K. Thakur,
Tien-Lin Lee,
Michael Reisinger,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SX…
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Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) is used to monitor diffusion in real-time across a proxy device. The device consists of a Si/SiO\textsubscript{2}/Ti$_x$W$_{1-x}$(300 nm)/Cu(25 nm) thin film material stack, with the Ti$_x$W$_{1-x}$ film acting as a diffusion barrier between Si and Cu. The monitoring of diffusion is achieved through the continuous collection of spectra whilst in-situ annealing to 673 K. Ti within the TiW is found to be highly mobile during annealing, diffusing out of the barrier and accumulating at the Cu surface. Increasing the Ti concentration within the Ti$_x$W$_{1-x}$ film increases the quantity of accumulated Ti, and Ti is first detected at the Cu surface at temperatures as low as 550 K. Surprisingly, at low Ti concentrations ($x$ = 0.054), W is also mobile and diffuses alongside Ti. These results provide crucial evidence for the importance of diffusion barrier composition on their efficacy during device application, delivering insights into the mechanisms underlying their effectiveness and limitations.
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Submitted 19 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Variability in X-ray induced effects in [Rh(COD)Cl]2 with changing experimental parameters
Authors:
Nathalie K. Fernando,
Hanna L. B. Boström,
Claire A. Murray,
Robin L. Owen,
Amber L. Thompson,
Joshua L. Dickerson,
Elspeth F. Garman,
Andrew B. Cairns,
Anna Regoutz
Abstract:
X-ray characterisation methods have undoubtedly enabled cutting-edge advances in all aspects of materials research. Despite the enormous breadth of information that can be extracted from these techniques, the challenge of radiation-induced sample change and damage remains prevalent. This is largely due to the emergence of modern, high-intensity X-ray source technologies and growing potential to ca…
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X-ray characterisation methods have undoubtedly enabled cutting-edge advances in all aspects of materials research. Despite the enormous breadth of information that can be extracted from these techniques, the challenge of radiation-induced sample change and damage remains prevalent. This is largely due to the emergence of modern, high-intensity X-ray source technologies and growing potential to carry out more complex, longer duration in-situ or in-operando studies. The tunability of synchrotron beamlines enables the routine application of photon energy-dependent experiments. This work explores the structural stability of [Rh(COD)Cl]2, a widely used catalyst and precursor in the chemical industry, across a range of beamline parameters that target X-ray energies of 8 keV, 15 keV, 18 keV and 25 keV, on a powder X-ray diffraction synchrotron beamline at room temperature. Structural changes are discussed with respect to absorbed X-ray dose at each experimental setting associated with the respective photon energy. In addition, the X-ray radiation hardness of the catalyst is discussed, by utilising the diffraction data at the different energies to determine a dose limit, which is often considered in protein crystallography and typically overlooked in small molecule crystallography. This work not only gives fundamental insight into how damage manifests in this organometallic catalyst, but will encourage careful consideration of experimental X-ray parameters before conducting diffraction on similar radiation-sensitive organometallic materials.
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Submitted 24 August, 2022; v1 submitted 23 August, 2022;
originally announced August 2022.
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Satellites in the Ti~1$s$ core level spectra of SrTiO$_3$ and TiO$_2$
Authors:
Atsushi Hariki,
Keisuke Higashi,
Tatsuya Yamaguchi,
Jiebin Li,
Curran Kalha,
Manfred Mascheck,
Susanna K. Eriksson,
Tomas Wiell,
Frank M. F. de Groot,
Anna Regoutz
Abstract:
Satellites in core level spectra of photoelectron spectroscopy (PES) can provide crucial information on the electronic structure and chemical bonding in materials, particular in transition metal oxides. This paper explores satellites of the Ti 1$s$ and 2$p$ core level spectra of SrTiO$_3$ and TiO$_2$. Conventionally, soft x-ray PES (SXPS) probes the Ti 2$p$ core level; however, it is not ideal to…
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Satellites in core level spectra of photoelectron spectroscopy (PES) can provide crucial information on the electronic structure and chemical bonding in materials, particular in transition metal oxides. This paper explores satellites of the Ti 1$s$ and 2$p$ core level spectra of SrTiO$_3$ and TiO$_2$. Conventionally, soft x-ray PES (SXPS) probes the Ti 2$p$ core level; however, it is not ideal to fully capture satellite features due to its inherent spin-orbit-splitting (SOS). Here, hard x-ray PES(HAXPES) provides access to the Ti 1$s$ spectrum instead, which allows us to study intrinsic charge responses upon core-hole creation without the complication from SOS and with favorable intrinsic linewidths. The experimental spectra are theoretically analyzed by two impurity models, including an Anderson impurity model (AIM) built on local density approximation (LDA) and dynamical mean-field theory (DMFT), and a conventional TiO$_6$ cluster model. The theoretical results emphasize the importance of explicit inclusion of higher-order Ti-O charge-transfer processes beyond the nearest-neighboring Ti-O bond to simulate the core level spectra of SrTiO$_3$ and TiO$_2$. The AIM approach with continuous bath orbitals provided by LDA+DMFT represents the experimental spectra well. Crucially, with the aid of the LDA+DMFT method, this paper provides a robust prescription of how to use the computationally cheap cluster model in fitting analyses of core level spectra.
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Submitted 6 January, 2023; v1 submitted 17 June, 2022;
originally announced June 2022.
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Tackling Disorder in $γ$-Ga$_2$O$_3$
Authors:
Laura E. Ratcliff,
Takayoshi Oshima,
Felix Nippert,
Benjamin M. Janzen,
Elias Kluth,
Rüdiger Goldhahn,
Martin Feneberg,
Piero Mazzolini,
Oliver Bierwagen,
Charlotte Wouters,
Musbah Nofal,
Martin Albrecht,
Jack E. N. Swallow,
Leanne A. H. Jones,
Pardeep K. Thakur,
Tien-Lin Lee,
Curran Kalha,
Christoph Schlueter,
Tim D. Veal,
Joel B. Varley,
Markus R. Wagner,
Anna Regoutz
Abstract:
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent…
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Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. $γ$-Ga$_2$O$_3$ presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure -- electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the $γ$-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of $γ$-Ga$_2$O$_3$. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Submitted 9 May, 2022;
originally announced May 2022.
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Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach
Authors:
Curran Kalha,
Michael Reisinger,
Pardeep. K. Thakur,
Tien-Lin Lee,
Sriram Venkatesan,
Mark Isaacs,
Robert G. Palgrave,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of ti…
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Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.
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Submitted 20 January, 2022;
originally announced January 2022.
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Lifetime effects and satellites in the photoelectron spectrum of tungsten metal
Authors:
Curran Kalha,
Laura E. Ratcliff,
Julio J. Gutiérrez Moreno,
Stephan Mohr,
Mervi Mantsinen,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Hsiang-Han Tseng,
Tim S. Nunney,
Juhan M. Kahk,
Johannes Lischner,
Anna Regoutz
Abstract:
Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, i…
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Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of metallic tungsten, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) with reflection electron energy loss spectroscopy (REELS) and a multi-tiered ab-initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and GW+C), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten based mixed-metal systems and holds promise for the re-assessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.
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Submitted 10 September, 2021;
originally announced September 2021.
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Thermal and Oxidation Stability of Ti$_x$W$_{1-x}$ Diffusion Barriers Investigated by Soft and Hard X-ray Photoelectron Spectroscopy
Authors:
Curran Kalha,
Sebastian Bichelmaier,
Nathalie K. Fernando,
Judith. V. Berens,
Pardeep K. Thakur,
Tien-Lin Lee,
Julio. J. Gutiérrez-Moreno,
Stephan Mohr,
Laura E. Ratcliff,
Michael Reisinger,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high temperature events or its behaviour when exposed to air. Here, a combined soft and hard X-ray…
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The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high temperature events or its behaviour when exposed to air. Here, a combined soft and hard X-ray photoelectron spectroscopy (XPS) characterisation approach is used to study the influence of post-deposition annealing and titanium concentration on the oxidation behaviour of a 300~nm-thick TiW film. The combination of both XPS techniques allows for the assessment of the chemical state and elemental composition across the surface and bulk of the TiW layer. The findings show that in response to high-temperature annealing, titanium segregates out of the mixed metal system and upwardly migrates, accumulating at the TiW/air interface. Titanium shows remarkably rapid diffusion under relatively short annealing timescales and the extent of titanium surface enrichment is increased through longer annealing periods or by increasing the precursor titanium concentration. Surface titanium enrichment enhances the extent of oxidation both at the surface and in the bulk of the alloy due to the strong gettering ability of titanium. Quantification of the soft X-ray photoelectron spectra highlights the formation of three tungsten oxidation environments, attributed to WO$_2$, WO$_3$ and a WO$_3$ oxide coordinated with a titanium environment. This combinatorial characterisation approach provides valuable insights into the thermal and oxidation stability of TiW alloys from two depth perspectives, aiding the development of future device technologies.
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Submitted 19 February, 2021;
originally announced February 2021.
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A Combined Density Functional Theory and X-ray Photoelectron Spectroscopy Study of the Aromatic Amino Acids
Authors:
Anna Regoutz,
Marta S. Wolinska,
Nathalie K. Fernando,
Laura E. Ratcliff
Abstract:
Amino acids are essential to all life. However, our understanding of some aspects of their intrinsic structure, molecular chemistry, and electronic structure is still limited. In particular the nature of amino acids in their crystalline form, often essential to biological and medical processes, faces a lack of knowledge both from experimental and theoretical approaches. An important experimental t…
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Amino acids are essential to all life. However, our understanding of some aspects of their intrinsic structure, molecular chemistry, and electronic structure is still limited. In particular the nature of amino acids in their crystalline form, often essential to biological and medical processes, faces a lack of knowledge both from experimental and theoretical approaches. An important experimental technique that has provided a multitude of crucial insights into the chemistry and electronic structure of materials is X-ray photoelectron spectroscopy. Whilst the interpretation of spectra of simple bulk inorganic materials is often routine, interpreting core level spectra of complex molecular systems is complicated to impossible without the help of theory. We have previously demonstrated the ability of density functional theory to calculate binding energies of simple amino acids, using $Δ$SCF implemented in a systematic basis set for both gas phase (multiwavelets) and solid state (plane waves) calculations. In this study, we use the same approach to successfully predict and rationalise the experimental core level spectra of phenylalanine (Phe), tyrosine (Tyr), tryptophan (Trp), and histidine (His) and gain an in-depth understanding of their chemistry and electronic structure within the broader context of more than 20 related molecular systems. The insights gained from this study provide significant information on the nature of the aromatic amino acids and their conjugated side chains.
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Submitted 30 October, 2020;
originally announced October 2020.
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Influence of Polymorphism on the Electronic Structure of Ga$_2$O$_3$
Authors:
Jack E. N. Swallow,
Christian Vorwerk,
Piero Mazzolini,
Patrick Vogt,
Oliver Bierwagen,
Alexander Karg,
Martin Eickhoff,
Jörg Schörmann,
Markus R. Wagner,
Joseph W. Roberts,
Paul R. Chalker,
Matthew J. Smiles,
Philip A. E. Murgatroyd,
Sara A. Razek,
Zachary W. Lebens-Higgins,
Louis F. J. Piper,
Leanne A. H. Jones,
Pardeep Kumar Thakur,
Tien-Lin Lee,
Joel B. Varley,
Jürgen Furthmüller,
Claudia Draxl,
Tim D. Veal,
Anna Regoutz
Abstract:
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ra…
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The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main $β$-phase. Here, three polymorphs of Ga$_2$O$_3$, $α$, $β$ and $\varepsilon$, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga$_2$O$_3$ polymorphs as materials at the heart of future electronic device generations.
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Submitted 22 September, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy
Authors:
Judith Berens,
Sebastian Bichelmaier,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Manfred Mascheck,
Tomas Wiell,
Susanna K. Eriksson,
J. Matthias Kahk,
Johannes Lischner,
Manesh V. Mistry,
Thomas Aichinger,
Gregor Pobegen,
Anna Regoutz
Abstract:
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC a…
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SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO$_2$. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO$_2$ and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.
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Submitted 21 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Selective control of localised vs. delocalised carriers in anatase TiO2 through reaction with O2
Authors:
Chiara Bigi,
Zhenkun Tang,
Gian Marco Pierantozzi,
Pasquale Orgiani,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Tommaso Pincelli,
Alessandro Troglia,
Tien-Lin Lee,
Regina Ciancio,
Goran Dražic,
Alberto Verdini,
Anna Regoutz,
Phil D. C. King,
Deepnarayan Biswas,
Giorgio Rossi,
Giancarlo Panaccione,
Annabella Selloni
Abstract:
Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies…
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Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies at the (001)-(1x4) surface of anatase TiO2, where both 2D metallic and deeper lying in-gap states (IGs) are observed. Remarkably, the two states exhibit very different evolution when the surface is exposed to molecular O2: while IGs are almost completely quenched, the metallic states are only weakly affected. The energy scale analysis for the vacancy migration and recombination resulting from the DFT calculations confirms indeed that only the IGs originate from and remain localized at the surface, whereas the metallic states originate from subsurface vacancies, whose migration and recombination at the surface is energetically less favorable rendering them therefore insensitive to oxygen dosing.
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Submitted 8 October, 2019;
originally announced October 2019.
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Charge-transfer effect in hard x-ray 1$s$ and 2$p$ photoemission spectra: LDA+DMFT and cluster-model analysis
Authors:
Mahnaz Ghiasi,
Atsushi Hariki,
Mathias Winder,
Jan Kuneš,
Anna Regoutz,
Tien-Lin Lee,
Yongfeng Hu,
Jean-Pascal Rueff,
Frank M. F. de Groot
Abstract:
We study $1s$ and $2p$ hard x-ray photoemission spectra (XPS) in a series of late transition metal oxides: Fe$_2$O$_3$ (3$d^{5}$), FeTiO$_3$ (3$d^{6}$), CoO (3$d^{7}$) and NiO (3$d^{8}$). The experimental spectra are analyzed with two theoretical approaches: the MO$_6$ cluster model and the local density approximation (LDA) + dynamical mean-field theory (DMFT). Owing to the absence of the core-val…
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We study $1s$ and $2p$ hard x-ray photoemission spectra (XPS) in a series of late transition metal oxides: Fe$_2$O$_3$ (3$d^{5}$), FeTiO$_3$ (3$d^{6}$), CoO (3$d^{7}$) and NiO (3$d^{8}$). The experimental spectra are analyzed with two theoretical approaches: the MO$_6$ cluster model and the local density approximation (LDA) + dynamical mean-field theory (DMFT). Owing to the absence of the core-valence multiplets and spin-orbit coupling, 1$s$ XPS is found to be a sensitive probe of chemical bonding and nonlocal charge-transfer screening, providing complementary information to 2$p$ XPS. The 1$s$ XPS spectra are used to assess the accuracy of the $ab$-initio LDA+DMFT approach, developed recently to study the material-specific charge-transfer effects in core-level XPS.
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Submitted 25 June, 2019; v1 submitted 16 December, 2018;
originally announced December 2018.
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Cooperative Effects of Strain and Electron Correlation in Epitaxial VO2 and NbO2
Authors:
Wei-Cheng Lee,
Matthew J. Wahila,
Shantanu Mukherjee,
Christopher N. Singh,
Tyler Eustance,
Anna Regoutz,
H. Paik,
Jos E. Boschker,
Fanny Rodolakis,
Tien-Lin Lee,
D. G. Schlom,
Louis F. J. Piper
Abstract:
We investigate the electronic structure of the epitaxial VO$_2$ films in the rutile phase using the density functional theory combined with the slave spin method (DFT+SS). In DFT-SS, the multiorbital Hubbard interactions are added to a DFT-fit tight-binding model, and we employ the slave-spin method to treat the electron correlation. We find that while stretching the system along the rutile $c$-ax…
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We investigate the electronic structure of the epitaxial VO$_2$ films in the rutile phase using the density functional theory combined with the slave spin method (DFT+SS). In DFT-SS, the multiorbital Hubbard interactions are added to a DFT-fit tight-binding model, and we employ the slave-spin method to treat the electron correlation. We find that while stretching the system along the rutile $c$-axis results in a band structure favoring an anisotropic orbital fillings, the electron correlation favors an equal electron filling among $t_{2g}$ orbitals. These two distinct effects cooperatively induce interesting orbital-dependent redistributions of the electron occupations and the spectral weights, which pushes the strained VO$_2$ toward an orbital selective Mott transition (OSMT). The simulated single-particle spectral functions are directly compared to V L-edge resonant X-ray photoemission spectroscopy of epitaxial 10 nm VO$_2$/TiO$_2$ (001) and (100) strain orientations. Excellent agreement is observed between the simulations and experimental data regarding the strain-induced evolution of the lower Hubbard band. Simulations of rutile NbO$_2$ under similar strain conditions as VO$_2$ are performed, and we predict that OSMT will not occur in rutile NbO$_2$. Our results indicates that the electron correlation in VO$_2$ is important and can be modulated even in the rutile phase before the Peierls instability sets in.
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Submitted 27 February, 2019; v1 submitted 21 August, 2018;
originally announced August 2018.
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Multiphase strontium molybdate thin films for plasmonic local heating applications
Authors:
Matthew P. Wells,
Bin Zou,
Andrei P. Mihai,
Ryan Bower,
Anna Regoutz,
Sarah Fearn,
Stefan A. Maier,
Neil McN. Alford,
Peter K. Petrov
Abstract:
In the search for alternative plasmonic materials SrMoO3 has recently been identified as possessing a number of desirable optical properties. Owing to the requirement for many plasmonic devices to operate at elevated temperatures however, it is essential to characterize the degradation of these properties upon heating. Here, SrMoO3 thin films are annealed in air at temperatures ranging from 75 - 5…
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In the search for alternative plasmonic materials SrMoO3 has recently been identified as possessing a number of desirable optical properties. Owing to the requirement for many plasmonic devices to operate at elevated temperatures however, it is essential to characterize the degradation of these properties upon heating. Here, SrMoO3 thin films are annealed in air at temperatures ranging from 75 - 500° C. Characterizations by AFM, XRD, and spectroscopic ellipsometry after each anneal identify a loss of metallic behaviour after annealing at 500° C, together with the underlying mechanism. Moreover, it is shown that by annealing the films in nitrogen following deposition, an additional crystalline phase of SrMoO4 is induced at the film surface, which suppresses oxidation at elevated temperatures.
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Submitted 8 March, 2018;
originally announced March 2018.
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Revisiting the origin of satellites in core level photoemission of transparent conducting oxides: the case of $n$-doped SnO$_2$
Authors:
F. Borgatti,
J. A. Berger,
D. Céolin,
J. S. Zhou,
J. J. Kas,
M. Guzzo,
C. F. McConville,
F. Offi,
G. Panaccione,
A. Regoutz,
D. J. Payne,
J. -P. Rueff,
O. Bierwagen,
M. E. White,
J. S. Speck,
M. Gatti,
R. G. Egdell
Abstract:
The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by co…
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The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by coupling of the Sn core hole to the plasma oscillations of the free electrons introduced by doping. Within the same theoretical framework, spectral changes of the valence band spectra are also related to dynamical screening effects. These results demonstrate that, for the interpretation of electron correlation features in the core level photoelectron spectra of such narrow-band materials, going beyond the homogeneous electron gas electron-plasmon coupling model is essential.
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Submitted 24 October, 2017;
originally announced October 2017.
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The role of spin-orbit coupling in the electronic structure of IrO$_2$
Authors:
Pranab Kumar Das,
Jagoda Sławińska,
Ivana Vobornik,
Jun Fujii,
Anna Regoutz,
Juhan M. Kahk,
David O. Scanlon,
Benjamin J. Morgan,
Cormac McGuinness,
Evegeny Plekhanov,
Domenico Di Sante,
Ying-Sheng Huang,
Ruei-San Chen,
Giorgio Rossi,
Silvia Picozzi,
William R. Branford,
Giancarlo Panaccione,
David J. Payne
Abstract:
The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combining high- resolution angle resolved photoemission spectroscopy and first principles calculations (with and without spin-orbit coupling), the electronic structure of the rutile binary iridate, IrO$_2$ is investigated. The…
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The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combining high- resolution angle resolved photoemission spectroscopy and first principles calculations (with and without spin-orbit coupling), the electronic structure of the rutile binary iridate, IrO$_2$ is investigated. The detailed study of electronic bands measured on a high-quality single crystalline sample, and use of a wide range of photon energy provide a huge improvement over the previous studies. The excellent agreement between theory and experimental results shows that the single-particle DFT description of IrO$_2$ band structure is adequate, without the need of invoking any treatment of correlation effects. Although many observed features point to a 3D nature of the electronic structure, clear surface effects are revealed. The discussion of the orbital character of the relevant bands crossing the Fermi level sheds light on spin orbit coupling-driven phenomena in this material, unveiling a spin-orbit induced avoided crossing, a property likely to play key role in its large spin Hall effect.
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Submitted 28 January, 2018; v1 submitted 5 July, 2017;
originally announced July 2017.
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Spatially resolved TiOx phases in RRAM conductive nanofilaments using soft X-ray spectromicroscopy
Authors:
Daniela Carta,
Adam Hitchcock,
Peter Guttmann,
Anna Regoutz,
Ali Khiat,
Alexantru Serb,
Isha Gupta,
Themistoklis Prodromakis
Abstract:
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such filaments is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolv…
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Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such filaments is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx-based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in low-resistive states comprise reduced disordered phases with O/Ti ratios close to Ti2O3 stoichiometry that aggregate in a ~ 100 nm filamentary region electrically conducting the top and bottom electrodes of the devices. We have also identified crystalline rutile and orthorhombic-like TiO2 phases in the region adjacent to the filament, suggesting that the temperature increases locally up to 1000 K, validating the role of Joule heating in resistive switching. Contrary to previous studies, our approach enables to simultaneously investigate morphological and chemical changes in a quantitative manner without incurring difficulties imposed by interpretation of electron diffraction patterns acquired via conventional electron microscopy techniques.
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Submitted 23 July, 2015;
originally announced July 2015.