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A toy model for 2-dimensional spin-fluctuation-induced unconventional superconductivity
Authors:
Tu M. Cao,
Igor I. Mazin
Abstract:
Superconductivity had been one of the most enigmatic phenomena in condensed matter physics, puzzling the best theorists for 45 years, since the original discovery by Kamerlingh-Onnes in 1911 till the final solution by Bardeen, Cooper and Schrieffer (BCS) in 1957. The original BCS proposal assumed the highest-symmetry form for the superconducting order parameter Delta, namely, a constant, and a uni…
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Superconductivity had been one of the most enigmatic phenomena in condensed matter physics, puzzling the best theorists for 45 years, since the original discovery by Kamerlingh-Onnes in 1911 till the final solution by Bardeen, Cooper and Schrieffer (BCS) in 1957. The original BCS proposal assumed the highest-symmetry form for the superconducting order parameter Delta, namely, a constant, and a uniform pairing interaction due to attractive mediation of ionic vibration. While it was rather soon realized that generalizations onto k-dependent order parameters and anisotropic pairing interaction was straightforward, only thirty years later, upon the discovery of high-temperature superconductivity in cuprates, high-order angular dependence of Delta and repulsive interaction, mediated by spin fluctuations or Coulomb repulsion brought such "unconventional" into the spotlight. In 2008 yet another such system was discovered, and eventually the idea of repulsion-mediated unconventional superconductivity was generally accepted. Apart from the two specific systems mentioned above, a large number of various specific implementations of this idea have been proposed, and it is becoming increasingly clear that it is worth studying mathematically how unconventional superconductivity emerges, and with what properties, for a simple, but sufficiently general theoretical model. In our project, we study systematically unconventional superconductivity in an isotropic two-dimensional model system of electrons, subjected to repulsive interactions of a simple, but physically motivated form: a Dirac-delta function peaked at a particular momentum (from 0 to twice the Fermi momentum), or Gaussian of varying widths.
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Submitted 24 August, 2024;
originally announced August 2024.
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Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Authors:
Pengcheng Ma,
Kaveh Delfanazari,
Reuben K. Puddy,
Jiahui Li,
Moda Cao,
Teng Yi,
Jonathan P. Griffiths,
Harvey E. Beere,
David A. Ritchie,
Michael J. Kelly,
Charles G. Smith
Abstract:
The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and…
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The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications.
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Submitted 10 April, 2024;
originally announced April 2024.
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Probing Complex-energy Topology via Non-Hermitian Absorption Spectroscopy in a Trapped Ion Simulator
Authors:
Mingming Cao,
Kai Li,
Wending Zhao,
Weixuan Guo,
Bingxiag Qi,
Xiuying Chang,
Zichao Zhou,
Yong Xu,
Luming Duan
Abstract:
Non-Hermitian systems generically have complex energies, which may host topological structures, such as links or knots. While there has been great progress in experimentally engineering non-Hermitian models in quantum simulators, it remains a significant challenge to experimentally probe complex energies in these systems, thereby making it difficult to directly diagnose complex-energy topology. He…
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Non-Hermitian systems generically have complex energies, which may host topological structures, such as links or knots. While there has been great progress in experimentally engineering non-Hermitian models in quantum simulators, it remains a significant challenge to experimentally probe complex energies in these systems, thereby making it difficult to directly diagnose complex-energy topology. Here, we experimentally realize a two-band non-Hermitian model with a single trapped ion whose complex eigenenergies exhibit the unlink, unknot or Hopf link topological structures. Based on non-Hermitian absorption spectroscopy, we couple one system level to an auxiliary level through a laser beam and then experimentally measure the population of the ion on the auxiliary level after a long period of time. Complex eigenenergies are then extracted, illustrating the unlink, unknot or Hopf link topological structure. Our work demonstrates that complex energies can be experimentally measured in quantum simulators via non-Hermitian absorption spectroscopy, thereby opening the door for exploring various complex-energy properties in non-Hermitian quantum systems, such as trapped ions, cold atoms, superconducting circuits or solid-state spin systems.
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Submitted 27 March, 2023;
originally announced March 2023.
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Automatic Parameter Selection for Electron Ptychography via Bayesian Optimization
Authors:
Michael C. Cao,
Zhen Chen,
Yi Jiang,
Yimo Han
Abstract:
Electron ptychography provides new opportunities to resolve atomic structures with deep sub-angstrom spatial resolution and studying electron-beam sensitive materials with high dose efficiency. In practice, obtaining accurate ptychography images requires simultaneously optimizing multiple parameters that are often selected based on trial-and-error, resulting in low-throughput experiments and preve…
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Electron ptychography provides new opportunities to resolve atomic structures with deep sub-angstrom spatial resolution and studying electron-beam sensitive materials with high dose efficiency. In practice, obtaining accurate ptychography images requires simultaneously optimizing multiple parameters that are often selected based on trial-and-error, resulting in low-throughput experiments and preventing wider adoption. Here, we develop an automatic parameter selection framework to circumvent this problem using Bayesian optimization with Gaussian processes. With minimal prior knowledge, the workflow efficiently produces ptychographic reconstructions that are superior than the ones processed by experienced experts. The method also facilitates better experimental designs by exploring optimized experimental parameters from simulated data.
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Submitted 25 April, 2022;
originally announced April 2022.
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Uncovering Material Deformations via Machine Learning Combined with Four-Dimensional Scanning Transmission Electron Microscopy
Authors:
Chuqiao Shi,
Michael C. Cao,
Sarah M. Rehn,
Sang-Hoon Bae,
Jeehwan Kim,
Matthew R. Jones,
David A. Muller,
Yimo Han
Abstract:
Understanding lattice deformations is crucial in determining the properties of nanomaterials, which can become more prominent in future applications ranging from energy harvesting to electronic devices. However, it remains challenging to reveal unexpected deformations that crucially affect material properties across a large sample area. Here, we demonstrate a rapid and semi-automated unsupervised…
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Understanding lattice deformations is crucial in determining the properties of nanomaterials, which can become more prominent in future applications ranging from energy harvesting to electronic devices. However, it remains challenging to reveal unexpected deformations that crucially affect material properties across a large sample area. Here, we demonstrate a rapid and semi-automated unsupervised machine learning approach to uncover lattice deformations in materials. Our method utilizes divisive hierarchical clustering to automatically unveil multi-scale deformations in the entire sample flake from the diffraction data using four-dimensional scanning transmission electron microscopy (4D-STEM). Our approach overcomes the current barriers of large 4D data analysis and enables extraction of essential features even without a priori knowledge of the sample. Using this purely data-driven analysis, we have uncovered different types of material deformations, such as strain, lattice distortion, bending contour, etc., which can significantly impact the band structure and subsequent performance of nanomaterials-based devices. We envision that this data-driven procedure will provide insight into the intrinsic structures and accelerate the discovery of novel materials.
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Submitted 11 November, 2021;
originally announced November 2021.
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Paired Ru-O-Mo ensemble for efficient and stable alkaline hydrogen evolution reaction
Authors:
HuangJingWei Li,
Kang Liu,
Junwei Fu,
Kejun Chen,
Kexin Yang,
Yiyang Lin,
Baopeng Yang,
Qiyou Wang,
Hao Pan,
Zhoujun Cai,
Hongmei Li,
Maoqi Cao,
Junhua Hu,
Ying-Rui Lu,
Ting-Shan Chan,
Emiliano Cortés,
Andrea Fratalocchi,
Min Liu
Abstract:
Electrocatalytic hydrogen evolution reaction (HER) in alkaline media is a promising electrochemical energy conversion strategy. Ruthenium (Ru) is an efficient catalyst with a desirable cost for HER, however, the sluggish H2O dissociation process, due to the low H2O adsorption on its surface, currently hampers the performances of this catalyst in alkaline HER. Herein, we demonstrate that the H2O ad…
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Electrocatalytic hydrogen evolution reaction (HER) in alkaline media is a promising electrochemical energy conversion strategy. Ruthenium (Ru) is an efficient catalyst with a desirable cost for HER, however, the sluggish H2O dissociation process, due to the low H2O adsorption on its surface, currently hampers the performances of this catalyst in alkaline HER. Herein, we demonstrate that the H2O adsorption improves significantly by the construction of Ru-O-Mo sites. We prepared Ru/MoO2 catalysts with Ru-O-Mo sites through a facile thermal treatment process and assessed the creation of Ru-O-Mo interfaces by transmission electron microscope (TEM) and extended X-ray absorption fine structure (EXAFS). By using Fourier-transform infrared spectroscopy (FTIR) and H2O adsorption tests, we proved Ru-O-Mo sites have tenfold stronger H2O adsorption ability than that of Ru catalyst. The catalysts with Ru-O-Mo sites exhibited a state-of-the-art overpotential of 16 mV at 10 mA cm-2 in 1 M KOH electrolyte, demonstrating a threefold reduction than the previous bests of Ru (59 mV) and commercial Pt (31 mV) catalysts. We proved the stability of these performances over 40 hours without decline. These results could open a new path for designing efficient and stable catalysts.
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Submitted 25 August, 2021;
originally announced August 2021.
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Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order
Authors:
Kayla X. Nguyen,
Yi Jiang,
Michael C. Cao,
Prafull Purohit,
Ajay K. Yadav,
Pablo García-Fernández,
Mark W. Tate,
Celesta S. Chang,
Pablo Aguado-Puente,
Jorge Íñiguez,
Fernando Gomez-Ortiz,
Sol M. Gruner,
Javier Junquera,
Lane W. Martin,
Ramamoorthy Ramesh,
D. A. Muller
Abstract:
Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not coupl…
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Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. To develop a mechanism that can control switching in polarization vortices, we utilize a high-energy electron beam and show that transverse currents are generated by polar order in the ballistic limit. We find that the presence of an electric toroidal moment in a ferro-rotational phase transfers a measurable torque and orbital angular momentum to the electron beam. Furthermore, we find that the complex polarization patterns, observed in these heterostructures, are microscopically chiral with a non-trivial axial component of the polarization. This chirality opens the door for the coupling of ferroelectric and optical properties.
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Submitted 9 December, 2020; v1 submitted 7 December, 2020;
originally announced December 2020.
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Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
Authors:
Shu-Wei Wang,
Di Xiao,
Ziwei Dou,
Moda Cao,
Yi-Fan Zhao,
Nitin Samarth,
Cui-Zu Chang,
Malcolm R. Connolly,
Charles G. Smith
Abstract:
Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible diss…
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Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible dissipative conducting channels in magnetic TI samples. By studying the temperature- and magnetic field-dependence of the magnetoresistance of a magnetic TI sandwich heterostructure device, we demonstrate that the predominant dissipation mechanism in thick QAH insulators can switch between non-chiral edge states and residual bulk states in different magnetic field regimes. The interactions between bulk states, chiral edge states, and non-chiral edge states are also investigated. Our study provides a way to distinguish between the dissipation arising from the residual bulk states and non-chiral edge states, which is crucial for achieving true dissipationless transport in QAH insulators and for providing deeper insights into QAH-related phenomena.
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Submitted 18 September, 2020; v1 submitted 27 August, 2020;
originally announced August 2020.
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Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire
Authors:
Riena Jinno,
Celesta S. Chang,
Takeyoshi Onuma,
Yongjin Cho,
Shao-Ting Ho,
Michael C. Cao,
Kevin Lee,
Vladimir Protasenko,
Darrell G. Schlom,
David A. Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi…
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Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.
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Submitted 16 July, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
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Experimental evidence for topological phases in the magnetoconductance of 2DEG-based hybrid junctions
Authors:
Kaveh Delfanazari,
Llorenc Serra,
Pengcheng Ma,
Reuben K. Puddy,
Teng Yi,
Moda Cao,
Yilmaz Gul,
Ian Farrer,
David A. Ritchie,
Hannah J. Joyce,
Michael J. Kelly,
Charles G. Smith
Abstract:
While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid…
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While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid junctions based on two-dimensional electron gases (2DEG) under fully out-of-plane magnetic fields. The large transverse Rashba spin-orbit interaction in 2DEG, together with a strong magneto-orbital effect, yield topological phase transitions to nontrivial phases hosting Majorana modes. Such Majorana modes are formed at the ends of 2DEG-based wires with a hybrid superconductor-semiconductor integrity. Here, we report on the experimental observation of such topological phases in Josephson junctions, based on In0.75Ga0.25As 2DEG, by sweeping out-of-plane magnetic fields of as small as 0 < B(mT) < 100 and probing the conductance to highlight the characteristic quantized magnetoconductance plateaus. Our approaches towards (i) creation and detection of topological phases in small out-of-plane magnetic fields, and (ii) integration of an array of topological Josephson junctions on a single chip pave the ways for the development of scalable quantum integrated circuits for their potential applications in fault-tolerant quantum processing and computing.
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Submitted 8 August, 2020; v1 submitted 4 July, 2020;
originally announced July 2020.
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Bidirectional Self-Folding with Atomic Layer Deposition Nanofilms for Microscale Origami
Authors:
Baris Bircan,
Marc Z. Miskin,
Robert J. Lang,
Michael C. Cao,
Kyle J. Dorsey,
Muhammad G. Salim,
Wei Wang,
David A. Muller,
Paul L. McEuen,
Itai Cohen
Abstract:
Origami design principles are scale invariant and enable direct miniaturization of origami structures provided the sheets used for folding have equal thickness to length ratios. Recently, seminal steps have been taken to fabricate microscale origami using unidirectionally actuated sheets with nanoscale thickness. Here, we extend the full power of origami-inspired fabrication to nanoscale sheets by…
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Origami design principles are scale invariant and enable direct miniaturization of origami structures provided the sheets used for folding have equal thickness to length ratios. Recently, seminal steps have been taken to fabricate microscale origami using unidirectionally actuated sheets with nanoscale thickness. Here, we extend the full power of origami-inspired fabrication to nanoscale sheets by engineering bidirectional folding with 4 nm thick atomic layer deposition (ALD) SiNx-SiO2 bilayer films. Strain differentials within these bilayers result in bending, producing microscopic radii of curvature. We lithographically pattern these bilayers and localize the bending using rigid panels to fabricate a variety of complex micro-origami devices. Upon release, these devices self-fold according to prescribed patterns. Our approach combines planar semiconductor microfabrication methods with computerized origami design, making it easy to fabricate and deploy such microstructures en masse. These devices represent an important step forward in the fabrication and assembly of deployable micromechanical systems that can interact with and manipulate micro- and nanoscale environments.
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Submitted 18 June, 2020;
originally announced June 2020.
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Imaging Polarity in Two Dimensional Materials by Breaking Friedel's Law
Authors:
Pratiti Deb,
Michael C. Cao,
Yimo Han,
Megan E. Holtz,
Saien Xie,
Jiwoong Park,
Robert Hovden,
David A. Muller
Abstract:
Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with…
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Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with unexpected contrast between conjugate Bragg peaks. We show analytically that retaining higher order terms in the power series expansion of the scattered wavefunction can describe the anomalous contrast between $hkl$ and $\overline{hkl}$ peaks that occurs in 2D crystals with broken in-plane inversion symmetry. These higher-order terms describe multiple scattering paths starting from the same atom in an atomically thin material. Furthermore, 2D materials containing heavy elements, such as WS$_2$, always act as strong phase objects, violating Friedel's law no matter how high the energy of the incident electron beam. Experimentally, this understanding can enhance diffraction-based techniques to provide rapid imaging of polarity, twin domains, in-plane rotations, or other polar textures in 2D materials.
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Submitted 6 May, 2020;
originally announced May 2020.
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Disentangling magnetic and grain contrast in polycrystalline FeGe thin films using four-dimensional Lorentz scanning transmission electron microscopy
Authors:
Kayla X. Nguyen,
Xiyue S. Zhang,
Emrah Turgut,
Michael C. Cao,
Jack Glaser,
Zhen Chen,
Matthew J. Stolt,
Celesta S. Chang,
Yu-Tsun Shao,
Song Jin,
Gregory D. Fuchs,
David A. Muller
Abstract:
The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable materi…
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The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable material platform. Although conventional Lorentz electron microscopy provides the requisite spatial resolution to probe chiral magnetic textures in single-crystal FeGe, probing the magnetism of sputtered B20 FeGe is more challenging because the sub-micron crystal grains add confounding contrast. We address the challenge of disentangling magnetic and grain contrast by applying 4-dimensional Lorentz scanning transmission electron microscopy using an electron microscope pixel array detector. Supported by analytical and numerical models, we find that the most important parameter for imaging magnetic materials with polycrystalline grains is the ability for the detector to sustain large electron doses, where having a high-dynamic range detector becomes extremely important. Despite the small grain size in sputtered B20 FeGe on Si, using this approach we are still able to observe helicity switching of skyrmions and magnetic helices across two adjacent grains as they thread through neighboring grains. We reproduce this effect using micromagnetic simulations by assuming that the grains have distinct orientation and magnetic chirality and find that magnetic helicity couples to crystal chirality. Our methodology for imaging magnetic textures is applicable to other thin-film magnets used for spintronics and memory applications, where an understanding of how magnetic order is accommodated in polycrystalline materials is important.
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Submitted 7 March, 2022; v1 submitted 19 January, 2020;
originally announced January 2020.
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Strain Mapping of Two-Dimensional Heterostructures with Sub-Picometer Precision
Authors:
Yimo Han,
Kayla Nguyen,
Michael Cao,
Paul Cueva,
Saien Xie,
Mark W. Tate,
Prafull Purohit,
Sol M. Gruner,
Jiwoong Park,
David A. Muller
Abstract:
Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable strain, dislocations, or ripples, which can strongly affect their mechanical, optical, and electronic properties. We have developed an approach to map 2D heterojuncti…
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Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable strain, dislocations, or ripples, which can strongly affect their mechanical, optical, and electronic properties. We have developed an approach to map 2D heterojunction lattice and strain profiles with sub-picometer precision and to identify dislocations and out-of-plane ripples. We collected diffraction patterns from a focused electron beam for each real-space scan position with a high-speed, high dynamic range, momentum-resolved detector - the electron microscope pixel array detector (EMPAD). The resulting four-dimensional (4D) phase space datasets contain the full spatially resolved lattice information of the sample. By using this technique on tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures, we have mapped lattice distortions with 0.3 pm precision across multi-micron fields of view and simultaneously observed the dislocations and ripples responsible for strain relaxation in 2D laterally-epitaxial structures.
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Submitted 24 January, 2018;
originally announced January 2018.
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Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator
Authors:
Wencan Jin,
Suresh Vishwanath,
Jianpeng Liu,
Lingyuan Kong,
Rui Lou,
Zhongwei Dai,
Jerzy T. Sadowski,
Xinyu Liu,
Huai-Hsun Lien,
Alexander Chaney,
Yimo Han,
Micheal Cao,
Junzhang Ma,
Tian Qian,
Jerry I. Dadap,
Shancai Wang,
Malgorzata Dobrowolska,
Jacek Furdyna,
David A. Muller,
Karsten Pohl,
Hong Ding,
Huili Grace Xing,
Richard M. Osgood, Jr
Abstract:
Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density fu…
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Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.
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Submitted 10 April, 2017;
originally announced April 2017.
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A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction
Authors:
Xiaoxian Song,
Yating Zhang,
Ran Wang,
Mingxuan Cao,
Yongli Che,
Jianlong Wang,
Haiyan Wang,
Lufan Jin,
Haitao Dai,
Xin Ding,
Guizhong Zhang,
Jianquan Yao
Abstract:
As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still u…
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As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still unknown. A comparison study is performed based on an MEH-PPV and PbS QDs hybrid.
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Submitted 29 April, 2015;
originally announced June 2015.
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Scaling of Particle Trajectories on a Lattice II: The Critical Region
Authors:
Meng-she Cao,
E. G. D. Cohen
Abstract:
The scaling behavior of the closed trajectories of a moving particle generated by randomly placed rotators or mirrors on a square or triangular lattice in the critical region are investigated. We study numerically two scaling functions: $f(x)$ related to the trajectory length distribution $n_S$ and $h(x)$ related to the trajectory size $R_S$ (gyration radius) as introduced by Stauffer for the pe…
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The scaling behavior of the closed trajectories of a moving particle generated by randomly placed rotators or mirrors on a square or triangular lattice in the critical region are investigated. We study numerically two scaling functions: $f(x)$ related to the trajectory length distribution $n_S$ and $h(x)$ related to the trajectory size $R_S$ (gyration radius) as introduced by Stauffer for the percolation problem, where $S$ is the length of a closed trajectory. The scaling function $f(x)$ is in most cases found to be symmetric double Gaussians with the same characteristic size exponent $σ=0.43\approx 3/7$ as was found at criticality. In contrast to previous assumptions of an exponential dependence of $n_S$ on $S$, the Gaussian functions lead to a stretched exponential dependence of $n_S$ on $S$, $n_S\sim e^{-S^{6/7}}$. However, for the rotator model on the partially occupied square lattice, an alternative scaling function near criticality is found, leading to a new exponent $σ'=1.6\pm0.3$ and a super exponential dependence of $n_S$ on $S$. The appearance of the same exponent $σ=3/7$ describing the behavior at and near the critical point is discussed. Our numerical simulations show that $h(x)$ is essentially a constant, which depends on the type of lattice and on the concentration of the scatterers.
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Submitted 29 August, 1996;
originally announced August 1996.
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Scaling of Particle Trajectories on a Lattice I: Critical Behavior
Authors:
Meng-she Cao,
E. G. D. Cohen
Abstract:
The scaling behavior of the closed trajectories of a moving particle generated by randomly placed rotators or mirrors on a square or triangular lattice is studied numerically. For most concentrations of the scatterers the trajectories close exponentially fast. For special critical concentrations infinitely extended trajectories can occur which exhibit a scaling behavior similar to that of the pe…
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The scaling behavior of the closed trajectories of a moving particle generated by randomly placed rotators or mirrors on a square or triangular lattice is studied numerically. For most concentrations of the scatterers the trajectories close exponentially fast. For special critical concentrations infinitely extended trajectories can occur which exhibit a scaling behavior similar to that of the perimeters of percolation clusters. In addition to the two critical exponents $τ=15/7$ and $d_{f}=7/4$ found before, the critical exponent $σ=3/7$, which is associated with the scaling function for trajectory size away from criticality, also appears. This exponent determines structural scaling properties of closed trajectories of finite size when they approach infinity, at criticality. New scaling behavior was found for the square lattice partially occupied by rotators, indicating a different universality class from that of percolation clusters. An argument for the scaling behavior found along the critical lines is presented.
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Submitted 29 August, 1996;
originally announced August 1996.
