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Ultraviolet and Near-Infrared Dual Band Selective-Harvesting Transparent Luminescent Solar Concentrators
Authors:
Chenchen Yang,
Wei Sheng,
Mehdi Moemeni,
Matthew Bates,
Christopher K. Herrera,
Babak Borhan,
Richard R. Lunt
Abstract:
Visibly transparent luminescent solar concentrators (TLSCs) can optimize both power production and visible transparency by selectively harvesting the invisible portion of the solar spectrum. Since the primary applications of TLSCs include building envelopes, greenhouses, automobiles, signage, and mobile electronics, maintaining aesthetics and functionalities is as important as achieving high power…
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Visibly transparent luminescent solar concentrators (TLSCs) can optimize both power production and visible transparency by selectively harvesting the invisible portion of the solar spectrum. Since the primary applications of TLSCs include building envelopes, greenhouses, automobiles, signage, and mobile electronics, maintaining aesthetics and functionalities is as important as achieving high power conversion efficiencies (PCEs) in practical deployment. In this work, we combine massive-downshifting phosphorescent nanoclusters and fluorescent organic molecules into a TLSC system as ultraviolet (UV) and near-infrared (NIR) selective-harvesting luminophores, respectively, demonstrating UV and NIR dual-band selective-harvesting TLSCs with PCE over 3%, average visible transmittance (AVT) exceeding 75% and color metrics suitable for the window industry. With distinct wavelength-selectivity and effective utilization of the invisible portion of the solar spectrum, this work reports the highest light utilization efficiency (PCE x AVT) of 2.6 for a TLSC system, the highest PCE of any transparent photovoltaic device with AVT greater than 70%, and outperforms the practical limit for non-wavelength-selective transparent photovoltaics.
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Submitted 20 September, 2020;
originally announced September 2020.
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Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2
Authors:
Q. J. Song,
Q. H. Tan,
X. Zhang,
J. B. Wu,
B. W. Sheng,
Y. Wan,
X. Q. Wang,
L. Dai,
P. H. Tan
Abstract:
We systematically study the high-resolution and polarized Raman spectra of multilayer (ML) MoTe2. The layer-breathing (LB) and shear (C) modes are observed in the ultralow-frequency region, which are used to quantitatively evaluate the interlayer coupling in ML MoTe2 based on the linear chain model, in which only the nearest interlayer coupling is considered. The Raman spectra on three different s…
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We systematically study the high-resolution and polarized Raman spectra of multilayer (ML) MoTe2. The layer-breathing (LB) and shear (C) modes are observed in the ultralow-frequency region, which are used to quantitatively evaluate the interlayer coupling in ML MoTe2 based on the linear chain model, in which only the nearest interlayer coupling is considered. The Raman spectra on three different substrates verify the negligible substrate effect on the phonon frequencies of ML MoTe2. Ten excitation energies are used to measure the high-frequency modes of N-layer MoTe2 (NL MoTe2; N is an integer). Under the resonant excitation condition, we observe N-dependent Davydov components in ML MoTe2 , originating from the Raman-active A'1(A21g) modes at ~172 cm-1. More than two Davydov components are observed in NL MoTe2 for N larger than 4 by Raman spectroscopy. The N-dependent Davydov components are further investigated based on the symmetry analysis. A van der Waals model only considering the nearest interlayer coupling has been proposed to well understand the Davydov splitting of high-frequency A'1(A21g) modes. The different resonant profiles for the two Davydov components in 3L MoTe2 indicate that proper excitation energy of ~1.8-2.2 eV must be chosen to observe the Davydov splitting in ML MoTe2 . Our work presents a simple way to identify layer number of ultrathin MoTe2 flakes by the corresponding number and peak position of Davydov components. Our work also provides a direct evidence from Raman spectroscopy of how the nearest van der Waals interactions significantly affect the frequency of the high-frequency intralayer phonon modes in multilayer MoTe2 and expands the understanding on the lattice vibrations and interlayer coupling of transition metal dichalcogenides and other two-dimensional materials.
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Submitted 9 March, 2016; v1 submitted 18 February, 2016;
originally announced February 2016.
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Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects
Authors:
Shuo Cao,
Jing Tang,
Yue Sun,
Kai Peng,
Yunan Gao,
Yanhui Zhao,
Chenjiang Qian,
Sibai Sun,
Hassan Ali,
Yuting Shao,
Shiyao Wu,
Feilong Song,
David A. Williams,
Weidong Sheng,
Kuijuan Jin,
Xiulai Xu
Abstract:
We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one ord…
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We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing.
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Submitted 7 December, 2015;
originally announced December 2015.
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Longitudinal wave function control in single quantum dots with an applied magnetic field
Authors:
Shuo Cao,
Jing Tang,
Yunan Gao,
Yue Sun,
Kangsheng Qiu,
Yanhui Zhao,
Min He,
Jin-An Shi,
Lin Gu,
David A. Williams,
Weidong Sheng,
Kuijuan Jin,
Xiulai Xu
Abstract:
Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of p…
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Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.
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Submitted 29 January, 2015;
originally announced January 2015.
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Substrate effects on quasiparticles and excitons in graphene nanoflakes
Authors:
W. Sheng,
M. Sun,
A. Zhou,
S. J. Xu
Abstract:
The effects of substrate on electronic and optical properties of triangular and hexagonal graphene nanoflakes with armchair edges are investigated by using a configuration interaction approach beyond double excitation scheme. The quasiparticle correction to the energy gap and exciton binding energy are found to be dominated by the long-range Coulomb interactions and exhibit similar dependence on t…
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The effects of substrate on electronic and optical properties of triangular and hexagonal graphene nanoflakes with armchair edges are investigated by using a configuration interaction approach beyond double excitation scheme. The quasiparticle correction to the energy gap and exciton binding energy are found to be dominated by the long-range Coulomb interactions and exhibit similar dependence on the dielectric constant of the substrate, which leads to a cancellation of their contributions to the optical gap. As a result, the optical gaps are shown to be insensitive to the dielectric environment and unexpectedly close to the single-particle gaps.
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Submitted 22 August, 2013;
originally announced August 2013.
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Dominant shear bands observed in amorphous ZrCuAl nanowires under simulated compression
Authors:
Qiran Xiao,
H. W. Sheng,
Yunfeng Shi
Abstract:
We observed the formation of dominant shear bands in model ZrCuAl metallic glass (MG) nanowires (18-nm-long) in molecular dynamics simulations, which implies size-independent incipient plasticity in MG materials. The MG nanowires were prepared using the simulated casting technique to ensure proper relaxation of sample surfaces. Under uniaxial compression, shear bands initiate at the surfaces and l…
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We observed the formation of dominant shear bands in model ZrCuAl metallic glass (MG) nanowires (18-nm-long) in molecular dynamics simulations, which implies size-independent incipient plasticity in MG materials. The MG nanowires were prepared using the simulated casting technique to ensure proper relaxation of sample surfaces. Under uniaxial compression, shear bands initiate at the surfaces and lead to reduced icosahedral short-range order. The shear band formation is sensitive to sample thermal-history, which calls for careful consideration of sample preparation effects in both experimental and numerical studies of size-effect in MG samples.
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Submitted 15 March, 2012;
originally announced March 2012.
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Electronic and magnetic properties of bilayer graphene with intercalated adsorption atoms C, N and O
Authors:
S. J. Gong,
W. Sheng,
Z. Q. Yang,
J. H. Chu
Abstract:
We present an ab-initio density function theory to investigate the electronic and magnetic structures of the bilayer graphene with intercalated atoms C, N, and O. The intercalated atom although initially positioned at the middle site of the bilayer interval will finally be adsorbed to one graphene layer. Both N and O atoms favor the bridge site (i.e. above the carbon-carbon bonding of the lower…
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We present an ab-initio density function theory to investigate the electronic and magnetic structures of the bilayer graphene with intercalated atoms C, N, and O. The intercalated atom although initially positioned at the middle site of the bilayer interval will finally be adsorbed to one graphene layer. Both N and O atoms favor the bridge site (i.e. above the carbon-carbon bonding of the lower graphene layer), while the C atom prefers the hollow site (i.e. just above a carbon atom of the lower graphene layer and simultaneously below the center of a carbon hexagon of the upper layer). Concerning the magnetic property, both C and N adatoms can induce itinerant Stoner magnetism by introducing extended or quasilocalized states around the Fermi level. Full spin polarization can be obtained in N-intercalated system and the magnetic moment mainly focuses on the N atom. In C-intercalated system, both the foreign C atom and some carbon atoms of the bilayer graphene are induced to be spin-polarized. N and O atoms can easily get electrons from carbon atoms of bilayer graphene, which leads to Fermi level shifting downward to valence band and thus producing the metallic behavior in bilayer graphene.
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Submitted 5 January, 2010;
originally announced January 2010.
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Tuning the exciton g-factor in single InAs/InP quantum dots
Authors:
D. Kim,
W. Sheng,
P. J. Poole,
D. Dalacu,
J. Lefebvre,
J. Lapointe,
M. E. Reimer,
G. C. Aers,
R. L. Williams
Abstract:
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight bind…
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Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.
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Submitted 10 December, 2008; v1 submitted 16 September, 2008;
originally announced September 2008.
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Atomistic theory of electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates
Authors:
Weidong Sheng,
Pawel Hawrylak
Abstract:
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole…
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We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via Bir-Pikus Hamiltonian. The optical properties are determined by solving many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of positioning of quantum dots using nanotemplate on their optical spectra is determined by a comparison with dots on unpatterned substrates, and with experimental results. The possibility of tuning the quantum dot properties with varying the nano-template is explored.
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Submitted 5 May, 2005;
originally announced May 2005.
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Multiband theory of multi-exciton complexes in self-assembled quantum dots
Authors:
Weidong Sheng,
Shun-Jen Cheng,
Pawel Hawrylak
Abstract:
We report on a multiband microscopic theory of many-exciton complexes in self-assembled quantum dots. The single particle states are obtained by three methods: single-band effective-mass approximation, the multiband $k\cdot p$ method, and the tight-binding method. The electronic structure calculations are coupled with strain calculations via Bir-Pikus Hamiltonian. The many-body wave functions of…
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We report on a multiband microscopic theory of many-exciton complexes in self-assembled quantum dots. The single particle states are obtained by three methods: single-band effective-mass approximation, the multiband $k\cdot p$ method, and the tight-binding method. The electronic structure calculations are coupled with strain calculations via Bir-Pikus Hamiltonian. The many-body wave functions of $N$ electrons and $N$ valence holes are expanded in the basis of Slater determinants. The Coulomb matrix elements are evaluated using statically screened interaction for the three different sets of single particle states and the correlated $N$-exciton states are obtained by the configuration interaction method. The theory is applied to the excitonic recombination spectrum in InAs/GaAs self-assembled quantum dots. The results of the single-band effective-mass approximation are successfully compared with those obtained by using the of $k\cdot p$ and tight-binding methods.
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Submitted 13 October, 2004;
originally announced October 2004.
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Absence of correlation between built-in electric dipole moment and quantum Stark effect in InAs/GaAs self-assembled quantum dots
Authors:
Weidong Sheng,
Jean-Pierre Leburton
Abstract:
We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order perturbation theory fails to correctly describe the Stark shift for electric field below $F = 10$ kV/cm in high dots. Eight-band ${\bf k}\cdot{\bf p}$ calcula…
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We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order perturbation theory fails to correctly describe the Stark shift for electric field below $F = 10$ kV/cm in high dots. Eight-band ${\bf k}\cdot{\bf p}$ calculations demonstrate this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affects the hole ground state. Our conclusions are supported by two independent experiments.
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Submitted 26 April, 2002;
originally announced April 2002.
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Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
Authors:
Weidong Sheng,
Jean-Pierre Leburton
Abstract:
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous…
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Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.
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Submitted 3 July, 2001;
originally announced July 2001.
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The second order nonlinear conductance of a two-dimensional mesoscopic conductor
Authors:
Wei-Dong Sheng,
Jian Wang,
Hong Guo
Abstract:
We have investigated the weakly non-linear quantum transport properties of a two-dimensional quantum conductor. We have developed a numerical scheme which is very general for this purpose. The nonlinear conductance is computed by explicitly evaluating the various partial density of states, the sensitivity and the characteristic potential. Interesting spatial structure of these quantities are rev…
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We have investigated the weakly non-linear quantum transport properties of a two-dimensional quantum conductor. We have developed a numerical scheme which is very general for this purpose. The nonlinear conductance is computed by explicitly evaluating the various partial density of states, the sensitivity and the characteristic potential. Interesting spatial structure of these quantities are revealed. We present detailed results concerning the crossover behavior of the second order nonlinear conductance when the conductor changes from geometrically symmetrical to asymmetrical. Other issues of interests such as the gauge invariance are also discussed.
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Submitted 11 April, 1997;
originally announced April 1997.
