-
Synthesis of Mg$_2$IrH$_5$: A potential pathway to high-$T_c$ hydride superconductivity at ambient pressure
Authors:
Mads F. Hansen,
Lewis J. Conway,
Kapildeb Dolui,
Christoph Heil,
Chris J. Pickard,
Anna Pakhomova,
Mohammed Mezouar,
Martin Kunz,
Rohit P. Prasankumar,
Timothy A. Strobel
Abstract:
Following long-standing predictions associated with hydrogen, high-temperature superconductivity has recently been observed in several hydride-based materials. Nevertheless, these high-$T_c$ phases only exist at extremely high pressures, and achieving high transition temperatures at ambient pressure remains a major challenge. Recent predictions of the complex hydride Mg$_{2}$IrH$_{6}$ may help ove…
▽ More
Following long-standing predictions associated with hydrogen, high-temperature superconductivity has recently been observed in several hydride-based materials. Nevertheless, these high-$T_c$ phases only exist at extremely high pressures, and achieving high transition temperatures at ambient pressure remains a major challenge. Recent predictions of the complex hydride Mg$_{2}$IrH$_{6}$ may help overcome this challenge with calculations of high-$T_c$ superconductivity (65 K$~<~T_c~<~$ 170 K) in a material that is stable at atmospheric pressure. In this work, the synthesis of Mg$_{2}$IrH$_{6}$ was targeted over a broad range of $P$-$T$ conditions, and the resulting products were characterized using X-ray diffraction (XRD) and vibrational spectroscopy, in concert with first-principles calculations. The results indicate that the charge-balanced complex hydride Mg$_{2}$IrH$_{5}$ is more stable over all conditions tested up to ca 28 GPa. The resulting hydride is isostructural with the predicted superconducting Mg$_{2}$IrH$_{6}$ phase except for a single hydrogen vacancy, which shows a favorable replacement barrier upon insertion of hydrogen into the lattice. Bulk Mg$_{2}$IrH$_{5}$ is readily accessible at mild $P$-$T$ conditions and may thus represent a convenient platform to access superconducting Mg$_{2}$IrH$_{6}$ via non-equilibrium processing methods.
△ Less
Submitted 13 June, 2024;
originally announced June 2024.
-
Feasible route to high-temperature ambient-pressure hydride superconductivity
Authors:
Kapildeb Dolui,
Lewis J. Conway,
Christoph Heil,
Timothy A. Strobel,
Rohit Prasankumar,
Chris J. Pickard
Abstract:
A key challenge in materials discovery is to find high-temperature superconductors. Hydrogen and hydride materials have long been considered promising materials displaying conventional phonon-mediated superconductivity. However, the high pressures required to stabilize these materials have restricted their application. Here, we present results from high-throughput computation, considering a wide r…
▽ More
A key challenge in materials discovery is to find high-temperature superconductors. Hydrogen and hydride materials have long been considered promising materials displaying conventional phonon-mediated superconductivity. However, the high pressures required to stabilize these materials have restricted their application. Here, we present results from high-throughput computation, considering a wide range of high-symmetry ternary hydrides from across the periodic table at ambient pressure. This large composition space is then reduced by considering thermodynamic, dynamic, and magnetic stability, before direct estimations of the superconducting critical temperature. This approach has revealed a metastable ambient-pressure hydride superconductor, Mg$_2$IrH$_6$, with a predicted critical temperature of 160 K, comparable to the highest temperature superconducting cuprates. We propose a synthesis route via a structurally related insulator, Mg$_2$IrH$_7$, which is thermodynamically stable above 15 GPa and discuss the potential challenges in doing so.
△ Less
Submitted 30 April, 2024; v1 submitted 11 October, 2023;
originally announced October 2023.
-
Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure $via$ Interface Engineering
Authors:
Sujan Maity,
Dibyendu Dey,
Anudeepa Ghosh,
Suvadip Masanta,
Binoy Krishna De,
Hemant Singh Kunwar,
Bikash Das,
Tanima Kundu,
Mainak Palit,
Satyabrata Bera,
Kapildeb Dolui,
Kenji Watanabe,
Takashi Taniguchi,
Liping Yu,
A Taraphder,
Subhadeep Datta
Abstract:
Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der Waals (vdW) materials. Herein, we report the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi$_\mathrm{2}$Te$_\mathrm{3}$, due to the proxi…
▽ More
Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der Waals (vdW) materials. Herein, we report the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi$_\mathrm{2}$Te$_\mathrm{3}$, due to the proximity of FePS$_\mathrm{3}$ (an antiferromagnet (AFM), $T_\mathrm{N}$ $\sim$ 120 K), in a vdW heterostructure framework. Temperature-dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin-lattice coupling at the Bi$_{2}$Te$_{3}$/FePS$_{3}$ interface at/below 60 K in the peak position (self-energy) and linewidth (lifetime) of the characteristic phonon modes of Bi$_{2}$Te$_{3}$ (106 cm$^{-1}$ and 138 cm$^{-1}$) in the stacked heterostructure. The Ginzburg-Landau (GL) formalism, where the respective phonon frequencies of Bi$_{2}$Te$_{3}$ couple to phonons of similar frequencies of FePS$_{3}$ in the AFM phase, has been adopted to understand the origin of the hybrid magneto-elastic modes. At the same time, the reduction of characteristic $T_\mathrm{N}$ of FePS$_3$ from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe-S-Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi$_{2}$Te$_{3}$/FePS$_{3}$ stacking regains the anharmonicity in Bi$_{2}$Te$_{3}$. Controlling interfacial spin-phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices.
△ Less
Submitted 25 April, 2024; v1 submitted 24 December, 2022;
originally announced December 2022.
-
Ultrahigh breakdown current density of van der Waals One Dimensional $\mathrm{PdBr_2}$
Authors:
Bikash Das,
Kapildeb Dolui,
Rahul Paramanik,
Tanima Kundu,
Sujan Maity,
Anudeepa Ghosh,
Mainak Palit,
Subhadeep Datta
Abstract:
One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better interconnect than conventional copper with higher current density and resistance to electro-migration with sustainable down-scaling. We report a new halide based "truly" 1D few-chain atomic thread, PdBr$_2$, isolable from its bu…
▽ More
One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better interconnect than conventional copper with higher current density and resistance to electro-migration with sustainable down-scaling. We report a new halide based "truly" 1D few-chain atomic thread, PdBr$_2$, isolable from its bulk which crystallizes in a monoclinic space group C2/c. Liquid phase exfoliated nanowires with mean length (20$\pm$1)$μ$m transferred onto SiO$_2$/Si wafer with a maximum aspect ratio of 5000 confirms the lower cleavage energy perpendicular to chain direction. Moreover, an isolated nanowire can also sustain current density of 200 MA/cm$^\mathrm{2}$ which is atleast one-order higher than typical copper interconnects. However, local transport measurement via conducting atomic force microscopy (CAFM) tip along the cross direction of the single chain records a much lower current density due to the anisotropic electronic band structure. While 1D nature of the nanoobject can be linked with non-trivial collective quantum behavior, vdW nature could be beneficial for the new pathways in interconnect fabrication strategy with better control of placement in an integrated circuit (IC).
△ Less
Submitted 16 November, 2022; v1 submitted 7 September, 2022;
originally announced September 2022.
-
Above-room-temperature ferromagnetism in ultrathin van der Waals magnet
Authors:
Hang Chen,
Shahidul Asif,
Kapildeb Dolui,
Yang Wang,
Jeyson Tamara Isaza,
V. M. L. Durga Prasad Goli,
Matthew Whalen,
Xinhao Wang,
Zhijie Chen,
Huiqin Zhang,
Kai Liu,
Deep Jariwala,
M. Benjamin Jungfleisch,
Chitraleema Chakraborty,
Andrew F. May,
Michael A. McGuire,
Branislav K. Nikolic,
John Q. Xiao,
Mark J. H. Ku
Abstract:
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling ultrathin and highly tunable spintronic devices. To realize high quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temp…
▽ More
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling ultrathin and highly tunable spintronic devices. To realize high quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here the study of exfoliated flakes of cobalt substituted Fe5GeTe2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm. This corresponds to one of the thinnest room-temperature 2D magnet flakes exfoliated from robust single crystals, reaching a thickness relevant to practical spintronic applications. The Curie temperature Tc of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed which predicted a high value of Tc ~270 K in CFGT monolayers. Pathways towards further enhancing monolayer Tc are discussed. These results support CFGT as a promising platform to realize high-quality room-temperature 2D magnet devices.
△ Less
Submitted 14 June, 2022;
originally announced June 2022.
-
Spin pumping from antiferromagnetic insulator spin-orbit-proximitized by adjacent heavy metal: A first-principles Floquet-nonequilibrium Green's function study
Authors:
Kapildeb Dolui,
Abhin Suresh,
Branislav K. Nikolic
Abstract:
Motivated by recent experiments [P. Vaidya {\em et al.}, Science {\bf 368}, 160 (2020)] on spin pumping from sub-THz radiation-driven uniaxial antiferromagnetic insulator (AFI) MnF$_2$ into heavy metal (HM) Pt hosting strong spin-orbit (SO) coupling, we compute and compare pumped spin currents in Cu/MnF$_2$/Cu and Pt/MnF$_2$/Cu heterostructures. Recent theories of spin pumping by AFI have relied o…
▽ More
Motivated by recent experiments [P. Vaidya {\em et al.}, Science {\bf 368}, 160 (2020)] on spin pumping from sub-THz radiation-driven uniaxial antiferromagnetic insulator (AFI) MnF$_2$ into heavy metal (HM) Pt hosting strong spin-orbit (SO) coupling, we compute and compare pumped spin currents in Cu/MnF$_2$/Cu and Pt/MnF$_2$/Cu heterostructures. Recent theories of spin pumping by AFI have relied on simplistic Hamiltonians (such as tight-binding) and the scattering approach to quantum transport yielding the so-called interfacial spin mixing conductance (SMC), but the concept of SMC ceases to be applicable when SO coupling is present directly at the interface. In contrast, we use more general first-principles quantum transport approach which combines noncollinear density functional theory with Floquet-nonequilibrium Green's functions in order to take into account: {\em SO-proximitized AFI} as a new type of quantum material, different from isolated AFI and brought about by AFI hybridization with adjacent HM layer; SO coupling at interfaces; and evanescent wavefunctions penetrating from Pt or Cu into AFI layer to make its interfacial region {\em conducting} rather than insulating as in the original AFI. The DC component of pumped spin current $I_\mathrm{DC}^{S_z}$ vs. precession cone angle $θ_{\vb*{l}}$ of the Néel vector $\vb*{l}$ of AFI {\em does not} follow putative $I^{S_z}_\mathrm{DC} \propto \sin^2 θ_{\vb*{l}}$, except for very small angles $θ_{\vb*{l}} \lesssim 10^\circ$ for which we can define an {\em effective} SMC from the prefactor and find that it doubles from MnF$_2$/Cu to MnF$_2$/Pt interface. In addition, the angular dependence $I^{S_z}_\mathrm{DC}(θ_{\vb*{l}})$ differs for opposite directions of precession of the Néel vector, leading to twice as large SMC for the right-handed than for the left-handed chirality of the precession mode.
△ Less
Submitted 18 January, 2022; v1 submitted 30 September, 2021;
originally announced September 2021.
-
Experimental Evidence of Stable 2$H$ Phase on the Surface of Layered 1$T'$-TaTe$_2$
Authors:
Indrani Kar,
Kapildeb Dolui,
Luminita Harnagea,
Y. Kushnirenko,
G. Shipunov,
N. C. Plumb,
M. Shi,
B. Büchner,
S. Thirupathaiah
Abstract:
We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as Ta…
▽ More
We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as TaS$_2$, TaSe$_2$, and isostructural compound NbTe$_2$. More importantly, we discover that the surface electronic structure of 1$T'$-TaTe$_2$ has more resemblance to the 2$H$-TaTe$_2$, while the bulk electronic structure has more resemblance to the hypothetical 1$T$-TaTe$_2$. These experimental observations are thoroughly compared with our DFT calculations performed on 1$T$-, 2$H$- and 2$H$ (monolayer)/1$T$- TaTe$_2$. We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2$H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.
△ Less
Submitted 22 December, 2020; v1 submitted 2 September, 2020;
originally announced September 2020.
-
Spin-orbit-proximitized ferromagnetic metal by monolayer transition metal dichalcogenide: Atlas of spectral functions, spin textures and spin-orbit torques in Co/MoSe$_2$, Co/WSe$_2$ and Co/TaSe$_2$ heterostructures
Authors:
Kapildeb Dolui,
Branislav K. Nikolic
Abstract:
The bilayer heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics. We demonstrate how hybridization of wavefunctions of Co layer and a monolayer of transition metal dichalcogenides (TMDs)---such as semiconducting MoSe$_2$ and W…
▽ More
The bilayer heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics. We demonstrate how hybridization of wavefunctions of Co layer and a monolayer of transition metal dichalcogenides (TMDs)---such as semiconducting MoSe$_2$ and WSe$_2$ or metallic TaSe$_2$---can lead to dramatic transmutation of electronic and spin structure of Co within some distance away from its interface with TMD, when compared to the bulk of Co or its surface in contact with vacuum. This is due to proximity induced SO splitting of Co bands encoded in the spectral functions and spin textures on its monolayers, which we obtain using noncollinear density functional theory (ncDFT) combined with equilibrium Green function (GF) calculations. In fact, SO splitting is present due to structural inversion asymmetry of the bilayer even if SO coupling within TMD monolayer is artificially switched off in ncDFT calculations, but switching it on makes the effects associated with proximity SO coupling within Co layer about five times larger. Injecting spin-unpolarized charge current through SO-proximitized monolayers of Co generates nonequilibrium spin density over them, so that its cross product with the magnetization of Co determines SO torque. The SO torque computed via first-principles quantum transport methodology, which combines ncDFT with nonequilibrium GF calculations, can be used as the screening parameter to identify optimal combination of materials and their interfaces for applications in spintronics. In particular, we identify heterostructure two-monolayer-Co/monolayer-WSe$_2$ as the most optimal.
△ Less
Submitted 19 June, 2020;
originally announced June 2020.
-
Scattering-induced and highly tunable by gate damping-like spin-orbit torque in graphene doubly proximitized by two-dimensional magnet Cr$_2$Ge$_2$Te$_6$ and WS$_2$
Authors:
Klaus Zollner,
Marko D. Petrovic,
Kapildeb Dolui,
Petr Plechac,
Branislav K. Nikolic,
Jaroslav Fabian
Abstract:
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using first-principles combined with quantum transport calculations, we predict that such doubly proximitized graphene within van der Waals heterostructure will exhibit SO torque…
▽ More
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using first-principles combined with quantum transport calculations, we predict that such doubly proximitized graphene within van der Waals heterostructure will exhibit SO torque driven by unpolarized charge current. This system lacking spin Hall current, putatively considered to be necessary for efficient damping-like (DL) SO torque that plays a key role in magnetization switching, demonstrates how DL torque component can be generated solely by skew-scattering off spin-independent potential barrier or impurities in purely two-dimensional electronic transport due to the presence of proximity SO coupling and its spin texture tilted out-of-plane. This leads to current-driven nonequilibrium spin density emerging in all spatial directions, whose cross product with proximity magnetization yields DL SO torque, unlike the ballistic regime with no scatterers in which only field-like (FL) SO torque appears. In contrast to SO torque on conventional metallic ferromagnets in contact with three dimensional SO-coupled materials, the ratio of FL and DL torque can be tuned by more than an order of magnitude via combined top and back gates.
△ Less
Submitted 12 September, 2020; v1 submitted 17 October, 2019;
originally announced October 2019.
-
First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$
Authors:
Kapildeb Dolui,
Marko D. Petrovic,
Klaus Zollner,
Petr Plechac,
Jaroslav Fabian,
Branislav K. Nikolic
Abstract:
The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to t…
▽ More
The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of bilayer-CrI$_3$/monolayer-TaSe$_2$ van der Waals heterostructure will induce spin-orbit torque (SOT) and thereby driven dynamics of magnetization on the first monolayer of CrI$_3$ in direct contact with TaSe$_2$. By combining calculated complex angular dependence of SOT with the Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization, we demonstrate that current pulses can switch the direction of magnetization on the first monolayer to become parallel to that of the second monolayer, thereby converting CrI$_3$ from antiferromagnet to ferromagnet while not requiring any external magnetic field. We explain the mechanism of this reversible current-driven nonequilibrium phase transition by showing that first monolayer of CrI$_3$ carries current due to evanescent wavefunctions injected by metallic transition metal dichalcogenide TaSe$_2$, while concurrently acquiring strong spin-orbit coupling (SOC) via such proximity effect, whereas the second monolayer of CrI$_3$ remains insulating. The transition can be detected by passing vertical read current through the vdW heterostructure, encapsulated by bilayer of hexagonal boron nitride and sandwiched between graphite electrodes, where we find tunneling magnetoresistance of $\simeq 240$%.
△ Less
Submitted 23 October, 2019; v1 submitted 30 September, 2019;
originally announced September 2019.
-
Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach
Authors:
Kapildeb Dolui,
Utkarsh Bajpai,
Branislav K. Nikolic
Abstract:
The spin mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect and spin pumping. However, the standard expression for SMC, provided by the scatte…
▽ More
The spin mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in spintronics, such as spin-orbit torque, spin Hall magnetoresistance, spin Hall effect and spin pumping. However, the standard expression for SMC, provided by the scattering theory in terms of the reflection probability amplitudes, is inapplicable when strong spin-orbit coupling (SOC) is present directly at the interface. This is the precisely the case of topological-insulator/ferromagnet and heavy-metal/ferromagnet interfaces of great contemporary interest. We introduce an approach where first-principles Hamiltonian of these interfaces, obtained from noncollinear density functional theory (ncDFT) calculations, is combined with charge conserving Floquet-nonequilibrium-Green-function formalism to compute {\em directly} the pumped spin current $I^{S_z}$ into semi-infinite left lead of two-terminal heterostructures Cu/X/Co/Cu or Y/Co/Cu---where X=Bi$_2$Se$_3$ and Y=Pt or W---due to microwave-driven steadily precessing magnetization of the Co layer. This allows us extract an effective SMC as a prefactor in $I^{S_z}$ vs. precession cone angle $θ$ dependence, as long as it remains the same, $I^{S_z} \propto \sin^2 θ$, as in the case where SOC is absent. By comparing calculations where SOC in switched off vs. switched on in ncDFT calculations, we find that SOC consistently reduces the pumped spin current and, therefore, the effective SMC.
△ Less
Submitted 23 December, 2019; v1 submitted 3 May, 2019;
originally announced May 2019.
-
Higgs-Axion interplay and anomalous magnetic phase diagram in TlCuCl$_3$
Authors:
Gaurav Kumar Gupta,
Kapildeb Dolui,
Abhinav Kumar,
D. D. Sarma,
Tanmoy Das
Abstract:
What is so unique in TlCuCl3 which drives so many unique magnetic features in this compound? To study these properties, here we employ a combination of ab-initio band structure, tight-binding model, and an effective quantum field theory. Within a density-functional theory (DFT) calculation, we find an unexpected bulk Dirac cone without spin-orbit coupling (SOC). Tracing back to its origin, we iden…
▽ More
What is so unique in TlCuCl3 which drives so many unique magnetic features in this compound? To study these properties, here we employ a combination of ab-initio band structure, tight-binding model, and an effective quantum field theory. Within a density-functional theory (DFT) calculation, we find an unexpected bulk Dirac cone without spin-orbit coupling (SOC). Tracing back to its origin, we identify, for the first time, the presence of a Su-Schrieffer-Heeger (SSH) like dimerized Cu chain lying in the 3D crystal structure. The SSH chain, combined with SOC, stipulates an anisotropic 3D Dirac cone where chiral and helical states are intertwined. As a Heisenberg interaction is introduced, we show that the dimerized Cu sublattices of the SSH chain condensate into spin-singlet, dimerized magnets. In the magnetic ground state, we also find a topological phase, distinguished by the axion angle. Finally, to study how the topological axion term couples to magnetic excitations, we derive a Chern-Simons-Ginzburg-Landau action from the 3D SSH Hamiltonian. We find that axion term provides an additional mass term to the Higgs mode, and a lifetime to paramagnons, which are independent of the quantum critical physics. The axion-Higgs interplay can be probed with electric and magnetic field applied parallel or anti-parallel to each other.
△ Less
Submitted 25 January, 2019; v1 submitted 30 April, 2018;
originally announced May 2018.
-
Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
Authors:
André Dankert,
Parham Pashaei,
M. Venkata Kamalakar,
Anand P. S. Gaur,
Satyaprakash Sahoo,
Ivan Rungger,
Awadhesh Narayan,
Kapildeb Dolui,
Anamul Hoque,
Michel P. de Jong,
Ram S. Katiyar,
Stefano Sanvito,
Saroj P. Dash
Abstract:
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 %…
▽ More
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance.
△ Less
Submitted 26 April, 2018;
originally announced April 2018.
-
First-principles quantum transport modeling of spin-transfer and spin-orbit torques in magnetic multilayers
Authors:
Branislav K. Nikolic,
Kapildeb Dolui,
Marko Petrović,
Petr Plecháč,
Troels Markussen,
Kurt Stokbro
Abstract:
We review a unified approach for computing: (i) spin-transfer torque in magnetic trilayers like spin-valves and magnetic tunnel junction, where injected charge current flows perpendicularly to interfaces; and (ii) spin-orbit torque in magnetic bilayers of the type ferromagnet/spin-orbit-coupled-material, where injected charge current flows parallel to the interface. Our approach requires to constr…
▽ More
We review a unified approach for computing: (i) spin-transfer torque in magnetic trilayers like spin-valves and magnetic tunnel junction, where injected charge current flows perpendicularly to interfaces; and (ii) spin-orbit torque in magnetic bilayers of the type ferromagnet/spin-orbit-coupled-material, where injected charge current flows parallel to the interface. Our approach requires to construct the torque operator for a given Hamiltonian of the device and the steady-state nonequilibrium density matrix, where the latter is expressed in terms of the nonequilibrium Green's functions and split into three contributions. Tracing these contributions with the torque operator automatically yields field-like and damping-like components of spin-transfer torque or spin-orbit torque vector, which is particularly advantageous for spin-orbit torque where the direction of these components depends on the unknown-in-advance orientation of the current-driven nonequilibrium spin density in the presence of spin-orbit coupling. We provide illustrative examples by computing spin-transfer torque in a one-dimensional toy model of a magnetic tunnel junction and realistic Co/Cu/Co spin-valve, both of which are described by first-principles Hamiltonians obtained from noncollinear density functional theory calculations; as well as spin-orbit torque in a ferromagnetic layer described by a tight-binding Hamiltonian which includes spin-orbit proximity effect within ferromagnetic monolayers assumed to be generated by the adjacent monolayer transition metal dichalcogenide.
△ Less
Submitted 29 April, 2018; v1 submitted 17 January, 2018;
originally announced January 2018.
-
Quantum phase transition in few-layer NbSe$_2$ probed through quantized conductance fluctuations
Authors:
Hemanta Kumar Kundu,
Sujay Ray,
Kapildeb Dolui,
Vivas Bagwe,
Palash Roy Choudhury,
S. B. Krupanidhi,
Tanmoy Das,
Pratap Raychaudhuri,
Aveek Bid
Abstract:
We present the first observation of dynamically modulated quantum phase transition (QPT) between two distinct charge density wave (CDW) phases in 2-dimensional 2H-NbSe$_2$. There is recent spectroscopic evidence for the presence of these two quantum phases, but its evidence in bulk measurements remained elusive. We studied suspended, ultra-thin \nbse devices fabricated on piezoelectric substrates…
▽ More
We present the first observation of dynamically modulated quantum phase transition (QPT) between two distinct charge density wave (CDW) phases in 2-dimensional 2H-NbSe$_2$. There is recent spectroscopic evidence for the presence of these two quantum phases, but its evidence in bulk measurements remained elusive. We studied suspended, ultra-thin \nbse devices fabricated on piezoelectric substrates - with tunable flakes thickness, disorder level and strain. We find a surprising evolution of the conductance fluctuation spectra across the CDW temperature: the conductance fluctuates between two precise values, separated by a quantum of conductance. These quantized fluctuations disappear for disordered and on-substrate devices. With the help of mean-field calculations, these observations can be explained as to arise from dynamical phase transition between the two CDW states. To affirm this idea, we vary the lateral strain across the device via piezoelectric medium and map out the phase diagram near the quantum critical point (QCP). The results resolve a long-standing mystery of the anomalously large spectroscopic gap in NbSe$_2$.
△ Less
Submitted 12 January, 2018;
originally announced January 2018.
-
Spin-memory loss due to spin-orbit coupling at ferromagnet/heavy-metal interfaces: Ab initio spin-density matrix approach
Authors:
Kapildeb Dolui,
Branislav K. Nikolic
Abstract:
Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic experiments. However, its strength extracted by fitting experimental data to phenomenological semiclassical theory, which replaces each interface by a fictitious bulk…
▽ More
Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic experiments. However, its strength extracted by fitting experimental data to phenomenological semiclassical theory, which replaces each interface by a fictitious bulk diffusive layer, is poorly understood from a microscopic quantum framework and/or materials properties. Here we describe an ensemble of flowing spin quantum states using spin-density matrix, so that SML is measured like any decoherence process by the decay of its off-diagonal elements or, equivalently, by the reduction of the magnitude of polarization vector. By combining this framework with density functional theory (DFT), we examine how all three components of the polarization vector change at Co/Ta, Co/Pt, Co/Cu, Pt/Cu and Pt/Au interfaces embedded within Cu/FM/HM/Cu vertical heterostructures. In addition, we use ab initio Green's functions to compute spectral functions and spin textures over FM, HM and NM monolayers around these interfaces which quantify interfacial spin-orbit coupling and explain the microscopic origin of SML in long-standing puzzles, such as why it is nonzero at Co/Cu interface; why it is very large at Pt/Cu interface; and why it occurs even in the absence of disorder, intermixing and magnons at the interface.
△ Less
Submitted 13 December, 2017; v1 submitted 23 August, 2017;
originally announced August 2017.
-
Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes
Authors:
J. M. Marmolejo-Tejada,
K. Dolui,
P. Lazic,
P. -H. Chang,
S. Smidstrup,
D. Stradi,
K. Stokbro,
B. K. Nikolic
Abstract:
The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi$_2$Se$_3$ and Co or Cu layers…
▽ More
The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin texture around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi$_2$Se$_3$ and Co or Cu layers comprising the interface. In contrast to widely assumed but thinly tested Dirac cone gapped by the proximity exchange field, we find that the Rashba ferromagnetic model describes the spectral function on the surface of Bi$_2$Se$_3$ in contact with Co near the Fermi level $E_F^0$, where circular and snowflake-like constant energy contours coexist around which spin locks to momentum. The remnant of the Dirac cone is hybridized with evanescent wave functions injected by metallic layers and pushed, due to charge transfer from Co or Cu layers, few tenths of eV below $E_F^0$ for both Bi$_2$Se$_3$/Co and Bi$_2$Se$_3$/Cu interfaces while hosting distorted helical spin texture wounding around a single circle. These features explain recent observation [K. Kondou {\em et al.}, Nat. Phys. {\bf 12}, 1027 (2016)] of sensitivity of spin-to-charge conversion signal at TI/Cu interface to tuning of $E_F^0$. Interestingly, three monolayers of Co adjacent to Bi$_2$Se$_3$ host spectral functions very different from the bulk metal, as well as in-plane spin textures signifying the spin-orbit proximity effect. We predict that out-of-plane tunneling anisotropic magnetoresistance in vertical heterostructure Cu/Bi$_2$Se$_3$/Co, where current flowing perpendicular to its interfaces is modulated by rotating magnetization from parallel to orthogonal to current flow, can serve as a sensitive probe of spin texture residing at $E_F^0$.
△ Less
Submitted 28 March, 2017; v1 submitted 2 January, 2017;
originally announced January 2017.
-
Unusual Dirac fermions on the surface of noncentrosymmetric $α$ - BiPd superconductor
Authors:
S. Thirupathaiah,
Soumi Ghosh,
Rajveer Jha,
E. D. L. Rienks,
Kapildeb Dolui,
V. V. Ravi Kishore,
B. Büchner,
Tanmoy Das,
V. P. S. Awana,
D. D. Sarma,
J. Fink
Abstract:
Combining multiple emergent correlated properties such as superconductivity and magnetism within the topological matrix can have exceptional consequences in garnering new and exotic physics. Here, we study the topological surface states from a noncentrosymmetric $α$-BiPd superconductor by employing angle-resolved photoemission spectroscopy (ARPES) and first principle calculations. We observe that…
▽ More
Combining multiple emergent correlated properties such as superconductivity and magnetism within the topological matrix can have exceptional consequences in garnering new and exotic physics. Here, we study the topological surface states from a noncentrosymmetric $α$-BiPd superconductor by employing angle-resolved photoemission spectroscopy (ARPES) and first principle calculations. We observe that the Dirac surface states of this system have several interesting and unusual properties, compared to other topological surface states. The surface state is strongly anisotropic and the in-plane Fermi velocity varies rigorously on rotating the crystal about the $y$-axis. Moreover, it acquires an unusual band gap as a function of $k_y$, possibly due to hybridization with bulk bands, detected upon varying the excitation energy. Coexistence of all the functional properties, in addition to the unusual surface state characteristics make this an interesting material.
△ Less
Submitted 18 November, 2016; v1 submitted 28 September, 2016;
originally announced September 2016.
-
Intrinsic large gap quantum anomalous Hall insulators in La$X$ ($X$=Br, Cl, I)
Authors:
Kapildeb Dolui,
Sujay Ray,
Tanmoy Das
Abstract:
We report a theoretical prediction of a new class of bulk and intrinsic quantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) via relativistic first-principle calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight binding model is developed to understand the…
▽ More
We report a theoretical prediction of a new class of bulk and intrinsic quantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) via relativistic first-principle calculations. We find that these systems are innate long-ranged ferromagnets which, with the help of intrinsic spin-orbit coupling, become QAH insulators. A low-energy multiband tight binding model is developed to understand the origin of the QAH effect. Finally integer Chern number is obtained via Berry phase computation for each two-dimensional plane. These materials have the added benefit of a sizable band gap of as large as $\sim$ 25 meV, with the flexibility of enhancing it to above 75 meV via strain engineering. The synthesis of La$X$ materials will provide the impurity-free single crystals and thin-film QAH insulators for versatile experiments and functionalities.
△ Less
Submitted 22 August, 2016;
originally announced August 2016.
-
Tuning the metal-insulator transition in NdNiO3 heterostructures via Fermi surface instability and spin-fluctuations
Authors:
R. S. Dhaka,
Tanmoy Das,
N. C. Plumb,
Z. Ristic,
W. Kong,
C. E. Matt,
N. Xu,
K. Dolui,
E. Razzoli,
M. Medarde,
L. Patthey,
M. Shi,
M. Radovic,
Joel Mesot
Abstract:
We employed {\it in-situ} pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO$_3$ (NNO) thin films, grown on NdGaO$_3$(110) and LaAlO$_3$(100) substrates. In the metallic phase, we observe three dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized band…
▽ More
We employed {\it in-situ} pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO$_3$ (NNO) thin films, grown on NdGaO$_3$(110) and LaAlO$_3$(100) substrates. In the metallic phase, we observe three dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with Q$_{AF}\sim$(1/4, 1/4, 1/4$\pm$$δ$).
△ Less
Submitted 18 May, 2015;
originally announced May 2015.
-
Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous
Authors:
Kapildeb Dolui,
Su Ying Quek
Abstract:
2D materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E_ext, applied normal to a 2D black phosphorus thin film, can reduce the direct band…
▽ More
2D materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E_ext, applied normal to a 2D black phosphorus thin film, can reduce the direct band gap of few-layer black phosphorus, resulting in an insulator-to-metal transition at a critical field, E_c. Increasing E_ext beyond E_c can induce a Dirac cone in the system, provided the black phosphorus film is sufficiently thin. The electric field strength can tune the position of the Dirac cone and the Dirac-Fermi velocities, the latter being similar in magnitude to that in graphene. We show that the Dirac cone arises from an anisotropic interaction term between the frontier orbitals that are spatially separated due to the applied field, on different halves of the 2D slab. When this interaction term becomes vanishingly small for thicker films, the Dirac cone can no longer be induced. Spin-orbit coupling can gap out the Dirac cone at certain electric fields; however, a further increase in field strength reduces the spin-orbit-induced gap, eventually resulting in a topological-insulator-to-Dirac-semi-metal transition.
△ Less
Submitted 12 March, 2015;
originally announced March 2015.
-
Spin-valve Effect in NiFe/MoS2/NiFe Junctions
Authors:
Weiyi Wang,
Awadhesh Narayan,
Lei Tang,
Kapildeb Dolui,
Yanwen Liu,
Xiang Yuan,
Yibo Jin,
Yizheng Wu,
Ivan Rungger,
Stefano Sanvito,
Faxian Xiu
Abstract:
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast…
▽ More
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.
△ Less
Submitted 14 August, 2015; v1 submitted 21 February, 2015;
originally announced February 2015.
-
Theory of Weyl orbital semimetals and predictions of several materials classes
Authors:
Kapildeb Dolui,
Tanmoy Das
Abstract:
Graphene, topological insulators, and Weyl semimetals are three widely studied materials classes which possess Dirac or Weyl cones arising from either sublattice symmetry or spin-orbit coupling. In this work, we present a theory of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals, where the orbital polarization and texture inversion between two electronic states at discrete…
▽ More
Graphene, topological insulators, and Weyl semimetals are three widely studied materials classes which possess Dirac or Weyl cones arising from either sublattice symmetry or spin-orbit coupling. In this work, we present a theory of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals, where the orbital polarization and texture inversion between two electronic states at discrete momenta lend itself into protected Dirac or Weyl cones without spin-orbit coupling. We also predict several families of Weyl orbital semimetals including V$_3$S$_4$, NiTi3S6, BLi, and PbO$_2$ via first-principle band structure calculations. We find that the highest Fermi velocity predicted in some of these materials is even larger than that of the existing Dirac materials. The synthesis of Weyl orbital semimetals will not only expand the territory of Dirac materials beyond the quintessential spin-orbit coupled systems and hexagonal lattice to the entire periodic table, but it may also open up new possibilities for orbital controlled electronics or `orbitronics'.
△ Less
Submitted 20 April, 2015; v1 submitted 8 December, 2014;
originally announced December 2014.
-
Superconducting dome in MoS2 and TiSe2 generated by quasiparticle-phonon coupling
Authors:
Tanmoy Das,
Kapildeb Dolui
Abstract:
We use a first-principles based self-consistent momentum-resolved density fluctuation (MRDF) model to compute the combined effects of electron-electron and electron-phonon interactions to describe the superconducting dome in the correlated MoS2 thin flake and TiSe2. We find that without including the electron-electron interaction, the electron-phonon coupling and the superconducting transition tem…
▽ More
We use a first-principles based self-consistent momentum-resolved density fluctuation (MRDF) model to compute the combined effects of electron-electron and electron-phonon interactions to describe the superconducting dome in the correlated MoS2 thin flake and TiSe2. We find that without including the electron-electron interaction, the electron-phonon coupling and the superconducting transition temperature (Tc) are overestimated in both these materials. However, once the full angular and dynamical fluctuations of the spin and charge density induced quasiparticle self-energy effects are included, the electron-phonon coupling and Tc are reduced to the experimental value. With doping, both electronic correlation and electron-phonon coupling grows, and above some doping value, the former becomes so large that it starts to reduce the quasiparticle-phonon coupling constant and Tc, creating a superconducting dome, in agreement with experiments.
△ Less
Submitted 30 March, 2015; v1 submitted 12 November, 2014;
originally announced November 2014.
-
Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions
Authors:
Kapildeb Dolui,
Awadhesh Narayan,
Ivan Rungger,
Stefano Sanvito
Abstract:
We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junc…
▽ More
We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness a maximum magnetoresistance of $\sim$300\% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.
△ Less
Submitted 15 July, 2014; v1 submitted 14 April, 2014;
originally announced April 2014.
-
Dimensionality driven charge density wave instability in TiS$_2$
Authors:
Kapildeb Dolui,
Stefano Sanvito
Abstract:
Density functional theory and density functional perturbation theory are used to investigate the electronic and vibrational properties of TiS$_2$. Within the local density approximation the material is a semi-metal both in the bulk and in the monolayer form. Most interestingly we observe a Kohn anomaly in the bulk phonon dispersion, which turns into a charge density wave instability when TiS$_2$ i…
▽ More
Density functional theory and density functional perturbation theory are used to investigate the electronic and vibrational properties of TiS$_2$. Within the local density approximation the material is a semi-metal both in the bulk and in the monolayer form. Most interestingly we observe a Kohn anomaly in the bulk phonon dispersion, which turns into a charge density wave instability when TiS$_2$ is thinned to less than four monolayers. Such charge density wave phase can be tuned by compressive strain, which appears to be the control parameter of the instability.
△ Less
Submitted 7 October, 2013;
originally announced October 2013.
-
Electric Field Effects on Armchair MoS2 Nanoribbons
Authors:
Kapildeb Dolui,
Chaitanya Das Pemmaraju,
Stefano Sanvito
Abstract:
{\it Ab initio} density functional theory calculations are performed to investigate the electronic structure of MoS$_2$ armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and semiconducting, exhibit a set of weakly interacting edge states whose energy position determines the band-gap of the system. We show that, by applying an externa…
▽ More
{\it Ab initio} density functional theory calculations are performed to investigate the electronic structure of MoS$_2$ armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and semiconducting, exhibit a set of weakly interacting edge states whose energy position determines the band-gap of the system. We show that, by applying an external transverse electric field, $E_\mathrm{ext}$, the nanoribbons band-gap can be significantly reduced, leading to a metal-insulator transition beyond a certain critical value. Moreover, the presence of a sufficiently high density of states at the Fermi level in the vicinity of the metal-insulator transition leads to the onset of Stoner ferromagnetism that can be modulated, and even extinguished, by $E_\mathrm{ext}$. In the case of bi-layer nanoribbons we further show that the band-gap can be changed from indirect to direct by applying a transverse field, an effect which might be of significance for opto-electronics applications.
△ Less
Submitted 28 August, 2013;
originally announced August 2013.
-
Ab-initio study on the possible doping strategies for MoS$_2$ monolayers
Authors:
Kapildeb Dolui,
Ivan Rungger,
Chaitanya Das Pemmaraju,
Stefano Sanvito
Abstract:
Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on…
▽ More
Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional dopants at the Mo site, Nb is identified as suitable p-type dopant, while Re is the donor with the lowest activation energy. When dopants are simply adsorbed on a monolayer we find that alkali metals shift the Fermi energy into the MoS$_2$ conduction band, making the system n-type. Finally, the adsorption of charged molecules is considered, mimicking an ionic liquid environment. We find that molecules adsorption can lead to both n- and p-type conductivity, depending on the charge polarity of the adsorbed species.
△ Less
Submitted 30 April, 2013;
originally announced April 2013.
-
Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate
Authors:
Kapildeb Dolui,
Ivan Rungger,
Stefano Sanvito
Abstract:
Ab-initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate the oxide plays an insignificant role, since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of t…
▽ More
Ab-initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate the oxide plays an insignificant role, since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band-gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO2 are mainly determined by the detailed structure of the MoS2 /SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2 -based devices.
△ Less
Submitted 11 January, 2013;
originally announced January 2013.
