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Optical and microstructural studies of femtosecond laser treated amorphous germanium thin coatings
Authors:
L. Kotsedi,
A. Abdelmalek,
V. Bharadwaj,
C. B. Mtshali,
Z. Y. Nuru,
B. Sotillo,
G. Coccia,
S. M. Eaton,
R. Ramponi,
El-H. Amara,
M. Maaza
Abstract:
The study of the relaxation mechanism of amorphous germanium after femtosecond laser irradiation is presented in this work. In particular, a thin germanium coating was deposited onto a glass substrate through the electron beam vacuum coating method. The substrate was kept at room temperature during the coating process, which resulted in a deposited layer characterized by an amorphous microstructur…
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The study of the relaxation mechanism of amorphous germanium after femtosecond laser irradiation is presented in this work. In particular, a thin germanium coating was deposited onto a glass substrate through the electron beam vacuum coating method. The substrate was kept at room temperature during the coating process, which resulted in a deposited layer characterized by an amorphous microstructure, as observed from the X-ray diffraction. The germanium layer was then irradiated with a femtosecond laser at 1030 nm wavelength, while varying the net fluence from 15 J cm-2 to 90 J cm-2. Moreover, an extended two temperature model was used to extract the electronic and lattice temperature of the laser heated germanium coating, showing a 32% contribution from heating due to the thermal accumulation effect. The microstructural and morphological studies of the irradiated samples were carried out using X-ray diffraction and high-resolution scanning electron microscopy. From the X-ray diffraction results, it was observed that at higher laser fluence there is an emergence of crystallinity on the germanium layer, with no evidence of oxidation. On the surface, the morphology was observed to evolve to granular sphere, attributed to melting of the material. Finally, an increase in absorbance with laser fluence was observed and the optical band gap of the coating was calculated.
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Submitted 21 August, 2024;
originally announced August 2024.
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Determining Strain Components in a Diamond Waveguide from Zero-Field ODMR Spectra of NV$^{-}$ Center Ensembles
Authors:
M. Sahnawaz Alam,
Federico Gorrini,
Michał Gawełczyk,
Daniel Wigger,
Giulio Coccia,
Yanzhao Guo,
Sajedeh Shahbazi,
Vibhav Bharadwaj,
Alexander Kubanek,
Roberta Ramponi,
Paul E. Barclay,
Anthony J. Bennett,
John P. Hadden,
Angelo Bifone,
Shane M. Eaton,
Paweł Machnikowski
Abstract:
The negatively charged nitrogen-vacancy (NV$^{-}$) center in diamond has shown great potential in nanoscale sensing and quantum information processing due to its rich spin physics. An efficient coupling with light, providing strong luminescence, is crucial for realizing these applications. Laser-written waveguides in diamond promote NV$^{-}$ creation and improve their coupling to light but, at the…
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The negatively charged nitrogen-vacancy (NV$^{-}$) center in diamond has shown great potential in nanoscale sensing and quantum information processing due to its rich spin physics. An efficient coupling with light, providing strong luminescence, is crucial for realizing these applications. Laser-written waveguides in diamond promote NV$^{-}$ creation and improve their coupling to light but, at the same time, induce strain in the crystal. The induced strain contributes to light guiding but also affects the energy levels of NV$^{-}$ centers. We probe NV$^{-}$ spin states experimentally with the commonly used continuous-wave zero-field optically detected magnetic resonance (ODMR). In our waveguides, the ODMR spectra are shifted, split, and consistently asymmetric, which we attribute to the impact of local strain. To understand these features, we model ensemble ODMR signals in the presence of strain. By fitting the model results to the experimentally collected ODMR data, we determine the strain tensor components at different positions, thus determining the strain profile across the waveguide. This shows that zero-field ODMR spectroscopy can be used as a strain imaging tool. The resulting strain within the waveguide is dominated by a compressive axial component transverse to the waveguide structure, with a smaller contribution from vertical and shear strain components.
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Submitted 12 August, 2024; v1 submitted 9 February, 2024;
originally announced February 2024.
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An integrated magnetometry platform with stackable waveguide-assisted detection channels for sensing arrays
Authors:
Michael Hoese,
Michael K. Koch,
Vibhav Bharadwaj,
Johannes Lang,
John P. Hadden,
Reina Yoshizaki,
Argyro N. Giakoumaki,
Roberta Ramponi,
Fedor Jelezko,
Shane M. Eaton,
Alexander Kubanek
Abstract:
The negatively-charged NV$^-$-center in diamond has shown great success in nanoscale, high-sensitivity magnetometry. Efficient fluorescence detection is crucial for improving the sensitivity. Furthermore, integrated devices enable practicable sensors. Here, we present a novel architecture which allows us to create NV$^-$-centers a few nanometers below the diamond surface, and at the same time in t…
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The negatively-charged NV$^-$-center in diamond has shown great success in nanoscale, high-sensitivity magnetometry. Efficient fluorescence detection is crucial for improving the sensitivity. Furthermore, integrated devices enable practicable sensors. Here, we present a novel architecture which allows us to create NV$^-$-centers a few nanometers below the diamond surface, and at the same time in the mode field maximum of femtosecond-laser-written type-II waveguides. We experimentally verify the coupling efficiency, showcase the detection of magnetic resonance signals through the waveguides and perform first proof-of-principle experiments in magnetic field and temperature sensing. The sensing task can be operated via the waveguide without direct light illumination through the sample, which marks an important step for magnetometry in biological systems which are fragile to light. In the future, our approach will enable the development of two-dimensional sensing arrays facilitating spatially and temporally correlated magnetometry.
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Submitted 4 December, 2020;
originally announced December 2020.
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VO$_2$ as a natural optical metamaterial
Authors:
Miller Eaton,
Alessandra Catellani,
Arrigo Calzolari
Abstract:
VO$_2$ is a unique phase change material with strongly anisotropic electronic properties. Recently, samples have been prepared that present a co-existence of phases and thus form metal-insulator junctions of the same chemical compound. Using first principles calculations, the optical properties of metallic and semiconducting VO$_2$ are here discussed to design self-contained natural optical metama…
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VO$_2$ is a unique phase change material with strongly anisotropic electronic properties. Recently, samples have been prepared that present a co-existence of phases and thus form metal-insulator junctions of the same chemical compound. Using first principles calculations, the optical properties of metallic and semiconducting VO$_2$ are here discussed to design self-contained natural optical metamaterials, avoiding coupling with other dielectric media. The analysis of the optical properties complements the experiments in the description of the vast change in reflectance and metallicity for both disordered and planar compounds. The present results also predict the possibility to realize ordered VO$_2$ junctions operating as efficient hyperbolic metamaterials in the THz-visible range, by simply adjusting the ratio between metallic and insulating VO$_2$ content. The possibility to excite propagating {\em volume plasmom polariton} across the metamaterial is finally discussed.
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Submitted 28 December, 2017;
originally announced December 2017.
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Integrated waveguides and deterministically positioned nitrogen vacancy centers in diamond created by femtosecond laser writing
Authors:
J. P. Hadden,
V. Bharadwaj,
B. Sotillo,
S. Rampini,
R. Osellame,
J. Witmer,
H. Jayakumar,
T. T. Fernandez,
A. Chiappini,
C. Armellini,
M. Ferrari,
R. Ramponi,
P. E. Barclay,
S. M. Eaton
Abstract:
Diamond's nitrogen vacancy (NV) center is an optically active defect with long spin coherence times, showing great potential for both efficient nanoscale magnetometry and quantum information processing schemes. Recently, both the formation of buried 3D optical waveguides and high quality single NVs in diamond were demonstrated using the versatile femtosecond laser-writing technique. However, until…
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Diamond's nitrogen vacancy (NV) center is an optically active defect with long spin coherence times, showing great potential for both efficient nanoscale magnetometry and quantum information processing schemes. Recently, both the formation of buried 3D optical waveguides and high quality single NVs in diamond were demonstrated using the versatile femtosecond laser-writing technique. However, until now, combining these technologies has been an outstanding challenge. In this work, we fabricate laser written photonic waveguides in quantum grade diamond which are aligned to within micron resolution to single laser-written NVs, enabling an integrated platform providing deterministically positioned waveguide-coupled NVs. This fabrication technology opens the way towards on-chip optical routing of single photons between NVs and optically integrated spin-based sensing.
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Submitted 12 March, 2018; v1 submitted 20 January, 2017;
originally announced January 2017.
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Viable route towards large-area two dimensional MoS2 using magnetron sputtering
Authors:
Hassana Samassekou,
Asma Alkabsh,
Milinda Wasala,
Miller Eaton,
Aaron Walber,
Andrew Walker,
Olli Pitkänen,
Krisztian Kordas,
Saikat Talapatra,
Thushari Jayasekera,
Dipanjan Mazumdar
Abstract:
Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsom…
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Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.
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Submitted 23 November, 2016; v1 submitted 24 May, 2016;
originally announced May 2016.