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Implementation of the bilayer Hubbard model in a moiré heterostructure
Authors:
Borislav Polovnikov,
Johannes Scherzer,
Subhradeep Misra,
Henning Schlömer,
Julian Trapp,
Xin Huang,
Christian Mohl,
Zhijie Li,
Jonas Göser,
Jonathan Förste,
Ismail Bilgin,
Kenji Watanabe,
Takashi Taniguchi,
Annabelle Bohrdt,
Fabian Grusdt,
Anvar S. Baimuratov,
Alexander Högele
Abstract:
Moiré materials provide a unique platform for studies of correlated many-body physics of the Fermi-Hubbard model on triangular spin-charge lattices. Bilayer Hubbard models are of particular significance with regard to the physics of Mott insulating states and their relation to unconventional superconductivity, yet their experimental implementation in moiré systems has so far remained elusive. Here…
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Moiré materials provide a unique platform for studies of correlated many-body physics of the Fermi-Hubbard model on triangular spin-charge lattices. Bilayer Hubbard models are of particular significance with regard to the physics of Mott insulating states and their relation to unconventional superconductivity, yet their experimental implementation in moiré systems has so far remained elusive. Here, we demonstrate the realization of a staggered bilayer triangular lattice of electrons in an antiparallel MoSe$_{2}$/WS$_{2}$ heterostructure. The bilayer lattice emerges due to strong electron confinement in the moiré potential minima and the near-resonant alignment of conduction band edges in MoSe$_{2}$ and WS$_{2}$. As a result, charge filling proceeds layer-by-layer, with the first and second electron per moiré cell consecutively occupying first the MoSe$_{2}$ and then the WS$_{2}$ layer. We describe the observed charging sequence by an electrostatic model and provide experimental evidence of spin correlations on the vertically offset and laterally staggered bilayer lattice, yielding absolute exciton Landé factors as high as $600$ at lowest temperatures. The bilayer character of the implemented spin-charge lattice allows for electrostatic tunability of Ruderman-Kittel-Kasuya-Yosida magnetism, and establishes antiparallel MoSe$_{2}$/WS$_{2}$ heterostructures as a viable platform for studies of bilayer Hubbard model physics with exotic magnetic phases on frustrated lattices.
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Submitted 8 April, 2024;
originally announced April 2024.
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Field-induced hybridization of moiré excitons in MoSe$_2$/WS$_2$ heterobilayers
Authors:
Borislav Polovnikov,
Johannes Scherzer,
Subhradeep Misra,
Xin Huang,
Christian Mohl,
Zhijie Li,
Jonas Göser,
Jonathan Förste,
Ismail Bilgin,
Kenji Watanabe,
Takashi Taniguchi,
Alexander Högele,
Anvar S. Baimuratov
Abstract:
We study experimentally and theoretically the hybridization among intralayer and interlayer moiré excitons in a MoSe$_2$/WS$_2$ heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moiré excitons in the MoSe$_2$/WS$_2$ heterostack to a perpendicular electric field, monitor the field…
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We study experimentally and theoretically the hybridization among intralayer and interlayer moiré excitons in a MoSe$_2$/WS$_2$ heterostructure with antiparallel alignment. Using a dual-gate device and cryogenic white light reflectance and narrow-band laser modulation spectroscopy, we subject the moiré excitons in the MoSe$_2$/WS$_2$ heterostack to a perpendicular electric field, monitor the field-induced dispersion and hybridization of intralayer and interlayer moiré exciton states, and induce a cross-over from type I to type II band alignment. Moreover, we employ perpendicular magnetic fields to map out the dependence of the corresponding exciton Landé $g$-factors on the electric field. Finally, we develop an effective theoretical model combining resonant and non-resonant contributions to moiré potentials to explain the observed phenomenology, and highlight the relevance of interlayer coupling for structures with close energetic band alignment as in MoSe$_2$/WS$_2$.
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Submitted 16 February, 2024; v1 submitted 27 April, 2023;
originally announced April 2023.
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Coulomb-correlated states of moiré excitons and charges in a semiconductor moiré lattice
Authors:
Borislav Polovnikov,
Johannes Scherzer,
Subhradeep Misra,
Xin Huang,
Christian Mohl,
Zhijie Li,
Jonas Göser,
Jonathan Förste,
Ismail Bilgin,
Kenji Watanabe,
Takashi Taniguchi,
Anvar S. Baimuratov,
Alexander Högele
Abstract:
Semiconductor moiré heterostructures exhibit rich correlation-induced many-body phenomena with signatures of emergent magnetism, Mott insulating states or generalized Wigner crystals observed in optical spectroscopy by probing intralayer excitons. However, as the staggered band alignment in the underlying WSe$_2$/WS$_2$ heterobilayer system separates photoexcited electrons and holes to form lowest…
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Semiconductor moiré heterostructures exhibit rich correlation-induced many-body phenomena with signatures of emergent magnetism, Mott insulating states or generalized Wigner crystals observed in optical spectroscopy by probing intralayer excitons. However, as the staggered band alignment in the underlying WSe$_2$/WS$_2$ heterobilayer system separates photoexcited electrons and holes to form lowest-energy interlayer excitons, direct access to interactions between correlated charge states and ground state moiré excitons remained elusive. Here, we use MoSe$_2$/WS$_2$ heterostacks with type-I band alignment to probe Coulomb interactions of elementary charges with the ground and excited states of moiré excitons. In addition to positive and negative moiré trions reminiscent of their canonical counterparts in monolayer MoSe$_2$, we reveal novel many-body states formed between moiré excitons and charges at fractional filling factors of the periodic moiré lattice. For both electrons and holes, these states exhibit doping-dependent Landé factors as a hallmark of correlation-induced magnetism, identifying the MoSe$_2$/WS$_2$ heterobilayer as a unique system for studies of correlated phenomena in ambipolar doping regimes.
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Submitted 29 September, 2022; v1 submitted 8 August, 2022;
originally announced August 2022.
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Stacking-dependent exciton multiplicity in WSe$_2$ bilayers
Authors:
Zhijie Li,
Jonathan Förste,
Kenji Watanabe,
Takashi Taniguchi,
Bernhard Urbaszek,
Anvar S. Baimuratov,
Iann C. Gerber,
Alexander Högele,
Ismail Bilgin
Abstract:
Twisted layers of atomically thin two-dimensional materials realize a broad range of novel quantum materials with engineered optical and transport phenomena arising from spin and valley degrees of freedom and strong electron correlations in hybridized interlayer bands. Here, we report experimental and theoretical studies of WSe$_2$ homobilayers obtained in two stable configurations of 2H (…
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Twisted layers of atomically thin two-dimensional materials realize a broad range of novel quantum materials with engineered optical and transport phenomena arising from spin and valley degrees of freedom and strong electron correlations in hybridized interlayer bands. Here, we report experimental and theoretical studies of WSe$_2$ homobilayers obtained in two stable configurations of 2H ($60^\circ$ twist) and 3R ($0^\circ$ twist) stackings by controlled chemical vapor synthesis of high-quality large-area crystals. Using optical absorption and photoluminescence spectroscopy at cryogenic temperatures, we uncover marked differences in the optical characteristics of 2H and 3R bilayer WSe$_2$ which we explain on the basis of beyond-DFT theoretical calculations. Our results highlight the role of layer stacking for the spectral multiplicity of momentum-direct intralayer exciton transitions in absorption, and relate the multiplicity of phonon sidebands in the photoluminescence to momentum-indirect excitons with different spin valley and layer character. Our comprehensive study generalizes to other layered homobilayer and heterobilayer semiconductor systems and highlights the role of crystal symmetry and stacking for interlayer hybrid states.
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Submitted 16 December, 2021;
originally announced December 2021.
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Spectral asymmetry of phonon sideband luminescence in monolayer and bilayer WSe2
Authors:
Victor Funk,
Koloman Wagner,
Edith Wietek,
Jonas D. Ziegler,
Jonathan Förste,
Jessica Lindlau,
Michael Förg,
Kenji Watanabe,
Takashi Taniguchi,
Alexey Chernikov,
Alexander Högele
Abstract:
We report an experimental study of temperature-dependent spectral lineshapes of phonon side-band emission stemming from dark excitons in monolayer and bilayer WSe$_{2}$. Using photoluminescence spectroscopy in the range from 4 to 100K, we observe a pronounced asymmetry in the phonon-assisted luminescence from momentum-indirect exciton reservoirs. We demonstrate that the corresponding spectral prof…
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We report an experimental study of temperature-dependent spectral lineshapes of phonon side-band emission stemming from dark excitons in monolayer and bilayer WSe$_{2}$. Using photoluminescence spectroscopy in the range from 4 to 100K, we observe a pronounced asymmetry in the phonon-assisted luminescence from momentum-indirect exciton reservoirs. We demonstrate that the corresponding spectral profiles are distinct from those of bright excitons with direct radiative decay pathways. The lineshape asymmetry reflects thermal distribution of exciton states with finite center-of-mass momenta, characteristic for phonon sideband emission. The extracted temperature of the exciton reservoirs is found to generally follow that of the crystal lattice, with deviations reflecting overheated populations. The latter are most pronounced in the bilayer case and at lowest temperatures. Our results add to the understanding of phonon-assisted recombination of momentum-dark excitons and, more generally, establish means to access the thermal distribution of finite-momentum excitons in atomically thin semiconductors with indirect bandgaps.
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Submitted 18 October, 2021;
originally announced October 2021.
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Moiré excitons in MoSe$_2$-WSe$_2$ heterobilayers and heterotrilayers
Authors:
Michael Förg,
Anvar S. Baimuratov,
Stanislav Yu. Kruchinin,
Ilia A. Vovk,
Johannes Scherzer,
Jonathan Förste,
Victor Funk,
Kenji Watanabe,
Takashi Taniguchi,
Alexander Högele
Abstract:
Layered two-dimensional materials exhibit rich transport and optical phenomena in twisted or lattice-incommensurate heterostructures with spatial variations of interlayer hybridization arising from moiré interference effects. Here, we report experimental and theoretical studies of excitons in twisted heterobilayers and heterotrilayers of transition metal dichalcogenides. Using MoSe$_2$-WSe$_2$ sta…
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Layered two-dimensional materials exhibit rich transport and optical phenomena in twisted or lattice-incommensurate heterostructures with spatial variations of interlayer hybridization arising from moiré interference effects. Here, we report experimental and theoretical studies of excitons in twisted heterobilayers and heterotrilayers of transition metal dichalcogenides. Using MoSe$_2$-WSe$_2$ stacks as representative realizations of twisted van der Waals bilayer and trilayer heterostructures, we observe contrasting optical signatures and interpret them in the theoretical framework of interlayer moiré excitons in different spin and valley configurations. We conclude that the photoluminescence of MoSe$_2$-WSe$_2$ heterobilayer is consistent with joint contributions from radiatively decaying valley-direct interlayer excitons and phonon-assisted emission from momentum-indirect reservoirs that reside in spatially distinct regions of moiré supercells, whereas the heterotrilayer emission is entirely due to momentum-dark interlayer excitons of hybrid-layer valleys. Our results highlight the profound role of interlayer hybridization for transition metal dichalcogenide heterostacks and other realizations of multi-layered semiconductor van der Waals heterostructures.
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Submitted 15 March, 2021; v1 submitted 16 June, 2020;
originally announced June 2020.
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Exciton g-factors in monolayer and bilayer WSe$_2$ from experiment and theory
Authors:
J. Förste,
N. V. Tepliakov,
S. Yu. Kruchinin,
J. Lindlau,
V. Funk,
M. Förg,
K. Watanabe,
T. Taniguchi,
A. S. Baimuratov,
A. Högele
Abstract:
The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. We present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe$_2$ monolayer and bilayer cr…
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The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. We present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe$_2$ monolayer and bilayer crystals embedded in a field effect device for active doping control. We develop theoretical methods to calculate the exciton $g$-factors from first principles and tight-binding for all possible spin-valley configurations of excitons in monolayer and bilayer WSe$_2$ including valley-indirect exciton configurations. Our theoretical and experimental findings shed light on some of the characteristic photoluminescence peaks observed for monolayer and bilayer WSe$_2$. In more general terms, the theoretical aspects of our work provide new guidelines for the characterization of single and few-layer transition metal dichalcogenides, as well as their heterostructures, in the presence of external magnetic fields.
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Submitted 4 March, 2020; v1 submitted 26 February, 2020;
originally announced February 2020.
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Identifying optical signatures of momentum-dark excitons in transition metal dichalcogenide monolayers
Authors:
Jessica Lindlau,
Cedric Robert,
Victor Funk,
Jonathan Förste,
Michael Förg,
Léo Colombier,
Andre Neumann,
Emmanuel Courtade,
Shivangi Shree,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail M. Glazov,
Xavier Marie,
Bernhard Urbaszek,
Alexander Högele
Abstract:
Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin…
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Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin configurations of such momentum-direct excitons as well as their charged counterparts provide a powerful platform for spin-valley and microcavity physics in two-dimensional materials. The corresponding spectral signatures, however, are insufficient to explain the main characteristic peaks observed in the photoluminescence spectra of ML TMDs on the basis of momentum-\textit{direct} excitons alone. Here, we show that the notion of momentum-\textit{indirect} excitons is important for the understanding of the versatile photoluminescence features. Taking into account phonon-assisted radiative recombination pathways for electrons and holes from dissimilar valleys, we interpret unidentified peaks in the emission spectra as acoustic and optical phonon sidebands of momentum-dark excitons. Our approach will facilitate the interpretation of optical, valley and spin phenomena in TMDs arising from bright and dark exciton manifolds.
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Submitted 25 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.
