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Electric field induced resistive switching in M$^{3+}_x$V$_{1-x}$O$_2$ (M$^{3+}$= Ga$^{3+}$, Al$^{3+}$) single crystals at temperatures below the T $\to$ M2 phase transition
Authors:
Larisa Patlagan,
George M. Reisner,
Shani Neyshtadt-Ronel,
Yoav Kalcheim,
Bertina Fisher
Abstract:
The phase diagram of VO$_2$ strained or doped with several trivalent ions consists of four phases; in order of increasing temperatures, three (M1, T and M2) are insulating while the fourth (R), above ~340 K, is metallic. These phases and the three phase transitions have been thoroughly investigated for about half a century by a wide variety of techniques, including electronic transport. While an u…
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The phase diagram of VO$_2$ strained or doped with several trivalent ions consists of four phases; in order of increasing temperatures, three (M1, T and M2) are insulating while the fourth (R), above ~340 K, is metallic. These phases and the three phase transitions have been thoroughly investigated for about half a century by a wide variety of techniques, including electronic transport. While an upwards jump of the resistance of up to a factor of 2 was observed at the T-M2 transition and a drop of several orders of magnitude was observed at the M2$\to$R one, resistive switching at the M1$\to$T transition remained elusive over all these years. Here we report on the investigation of Ga- and Al-doped VO$_2$ single crystals, following the rather surprising appearance of a small and steep drop of a factor of ~ 0.12 in the resistance of Ga-doped VO$_2$ single crystals detected by pulsed and DC I-V measurements carried out at room temperature, below the T$\to$M2 phase transition. Similar results were obtained also from measurements on Al-doped VO2 single crystals. Raman spectra of Ga-, and Al-doped crystals resolved their structures as function of temperature. The accumulated results of the measurements on Ga-, and Al-doped single crystals provide evidence for identifying the resistive switching at T$_{\rm RS}$<T$_{\rm T\to M2}$ with the M1$\to$T transition.
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Submitted 25 March, 2024; v1 submitted 4 March, 2024;
originally announced March 2024.
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Tunable superconductivity at the oxide-insulator/KTaO$_3$ interface and its origin
Authors:
Changjiang Liu,
Xianjing Zhou,
Deshun Hong,
Brandon Fisher,
Hong Zheng,
John Pearson,
Dafei Jin,
Michael R Norman,
Anand Bhattacharya
Abstract:
Superconductivity forms out of the condensation of Cooper pairs of electrons. The mechanism by which Cooper pairs are created in non-conventional superconductors is often elusive because experimental signatures that connect a specific pairing mechanism to the properties of superconducting state are rare. The recently discovered superconducting oxide-insulator/KTaO$_3$ interface may offer clues abo…
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Superconductivity forms out of the condensation of Cooper pairs of electrons. The mechanism by which Cooper pairs are created in non-conventional superconductors is often elusive because experimental signatures that connect a specific pairing mechanism to the properties of superconducting state are rare. The recently discovered superconducting oxide-insulator/KTaO$_3$ interface may offer clues about its origins. Here we observe distinct dependences of the superconducting transition temperature Tc on carrier density n$_{2D}$ for electron gases formed at KTaO$_3$ (111), (001) and (110) interfaces. For the KTaO$_3$ (111) interface, a remarkable linear dependence of Tc on n$_{2D}$ is observed over a range of nearly one order of magnitude. Further, our study of the dependence of superconductivity on gate electric fields reveals the role of the interface in mediating superconductivity, which also allows for a reversible electric switching of superconductivity at T = 2 K. We found that the extreme sensitivity of superconductivity to crystallographic orientation can be explained by Cooper pairing via inter-orbital interactions induced by the inversion-breaking transverse optical (TO1) phonons and quantum confinement. This mechanism is also consistent with the dependence of Tc on n$_{2D}$ at the KTaO$_3$ (111) interface. Our study may shed light on the pairing mechanism in other superconducting quantum-paraelectrics.
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Submitted 11 March, 2022;
originally announced March 2022.
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Effect of heat treatment on the current induced dynamic mixed metal-insulator phase in needle-like VO2 single crystals
Authors:
L. Patlagan,
G. M. Reisner,
B. Fisher
Abstract:
The Insulator-Metal-Transition adjoined by a structural transition of VO2 is induced above room temperature (340 K) by heating or self-heating. A steep resistance-jump of up to five orders of magnitude occurs at this transition in high quality, unstrained single crystals. Insulating domains sliding in the sense of the electric current within the metallic background were found so far exclusively in…
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The Insulator-Metal-Transition adjoined by a structural transition of VO2 is induced above room temperature (340 K) by heating or self-heating. A steep resistance-jump of up to five orders of magnitude occurs at this transition in high quality, unstrained single crystals. Insulating domains sliding in the sense of the electric current within the metallic background were found so far exclusively in the current induced mixed metal-insulator phase of VO2 single crystals; it is known for a long time that their uniformity and speed as function of current density are very sensitive to crystal quality. The high energetical cost of domain emission is the focus of our present investigations. In this Communication we report on the surprising behavior of a needle-like VO2 single crystal. Several I-V closed loops traced at room temperature concurrently with video recording of the crystal under the microscope, were followed by R(T) measurements during three slow heating-cooling cycles between room temperature and above 340 K, followed in their turn by an additional set of I-V measurements and video recordings. The results show that the slow cycling through the transition using external heat had a healing effect on the reproducibility of R(T) while increasing the activation energy of conduction in the insulating state and in reducing the damping term in the domains' sliding velocity. The intriguing result of this set of measurements was that the energy cost of the domain emission, was higher after healing than prior to it.
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Submitted 26 May, 2021;
originally announced May 2021.
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Manipulating topology in tailored artificial graphene nanoribbons
Authors:
Daniel J. Trainer,
Srilok Srinivasan,
Brandon L. Fisher,
Yuan Zhang,
Constance R. Pfeiffer,
Saw-Wai Hla,
Pierre Darancet,
Nathan P. Guisinger
Abstract:
Topological phases of matter give rise to exotic physics that can be leveraged for next generation quantum computation and spintronic devices. Thus, the search for topological phases and the quantum states that they exhibit have become the subject of a massive research effort in condensed matter physics. Topologically protected states have been produced in a variety of systems, including artificia…
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Topological phases of matter give rise to exotic physics that can be leveraged for next generation quantum computation and spintronic devices. Thus, the search for topological phases and the quantum states that they exhibit have become the subject of a massive research effort in condensed matter physics. Topologically protected states have been produced in a variety of systems, including artificial lattices, graphene nanoribbons (GNRs) and bismuth bilayers. Despite these advances, the real-time manipulation of individual topological states and their relative coupling, a necessary feature for the realization of topological qubits, remains elusive. Guided by first-principles calculations, we spatially manipulate robust, zero-dimensional topological states by altering the topological invariants of quasi-one-dimensional artificial graphene nanostructures. This is achieved by positioning carbon monoxide molecules on a copper surface to confine its surface state electrons into artificial atoms positioned to emulate the low-energy electronic structure of graphene derivatives. Ultimately, we demonstrate control over the coupling between adjacent topological states that are finely engineered and simulate complex Hamiltonians. Our atomic synthesis gives access to an infinite range of nanoribbon geometries, including those beyond the current reach of synthetic chemistry, and thus provides an ideal platform for the design and study of novel topological and quantum states of matter.
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Submitted 22 April, 2021;
originally announced April 2021.
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Quasi-two-dimensional heterostructures (K$M_{1-x}$Te)(LaTe$_{3}$) ($M$ = Mn, Zn) with charge density waves
Authors:
Jin-Ke Bao,
Christos D. Malliakas,
Chi Zhang,
Songting Cai,
Haijie Chen,
Alexander J. E. Rettie,
Brandon L. Fisher,
Duck Young Chung,
Vinayak P. Dravid,
Mercouri G. Kanatzidis
Abstract:
Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report the intergrowth compounds KLa$M$$_{1-x}$Te$_{4}$ ($M$ = Mn, Zn; $x\approx$ 0.35) featuring two chemically distinct alternating layers [LaTe$_3$] and [K$M$$_{1-x}$Te]. Their crystal structures are incomm…
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Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report the intergrowth compounds KLa$M$$_{1-x}$Te$_{4}$ ($M$ = Mn, Zn; $x\approx$ 0.35) featuring two chemically distinct alternating layers [LaTe$_3$] and [K$M$$_{1-x}$Te]. Their crystal structures are incommensurate, determined by single X-ray diffraction for the Mn compound and transmission electron microscope (TEM) study for the Zn compound. KLaMn$_{1-x}$Te$_{4}$ crystallizes in the orthorhombic superspace group $Pmnm$(01/2$γ$)$s$00 with lattice parameters $a$ = 4.4815(3) Å, $b$ = 21.6649(16) Å and $c$ = 4.5220(3) Å. It exhibits charge density wave (CDW) order at room temperature with a modulation wave vector $\mathbf{q}$ = 1/2$\mathbf{b}$* + 0.3478$\mathbf{c}$* originating from electronic instability of Te-square nets in [LaTe$_{3}$] layers. The Mn analog exhibits a cluster spin glass behavior with spin freezing temperature $T_{\mathrm{f}}$ $\approx$ 5 K attributed to disordered Mn vacancies and competing magnetic interactions in the [Mn$_{1-x}$Te] layers. The Zn analog also has charge density wave order at room temperature with a similar $\mathbf{q}$-vector having the $\mathbf{c}$* component ~ 0.346 confirmed by selected-area electron diffraction (SAED). Electron transfer from [K$M_{1-x}$Te] to [LaTe$_{3}$] layers exists in KLa$M_{1-x}$Te$_{4}$, leading to an enhanced electronic specific heat coefficient. The resistivities of KLa$M_{1-x}$Te$_{4}$ ($M$ = Mn, Zn) exhibit metallic behavior at high temperatures and an upturn at low temperatures, suggesting partial localization of carriers in the [LaTe$_{3}$] layers with some degree of disorder associated with the $M$ atom vacancies in the [$M_{1-x}$Te] layers.
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Submitted 16 April, 2021; v1 submitted 22 November, 2020;
originally announced November 2020.
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Voltage control of magnon spin currents in antiferromagnetic Cr2O3
Authors:
Changjiang Liu,
Yongming Luo,
Deshun Hong,
Steven S. -L. Zhang,
Brandon Fisher,
John E. Pearson,
J. Samuel Jiang,
Axel Hoffmann,
Anand Bhattacharya
Abstract:
Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigat…
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Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigate voltage control of the SSE in the antiferromagnetic insulator Cr2O3. We demonstrate that the SSE response generated in this material can be effectively controlled by applying a bias voltage, owing to the sensitivity of the SSE to the orientation of the magnetic sublattices as well as the existence of magnetoelectric couplings in Cr2O3. Our experimental results are explained using a model based on the magnetoelectric effect in Cr2O3.
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Submitted 24 July, 2020;
originally announced July 2020.
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Discovery of two-dimensional anisotropic superconductivity at KTaO$_3$ (111) interfaces
Authors:
Changjiang Liu,
Xi Yan,
Dafei Jin,
Yang Ma,
Haw-Wen Hsiao,
Yulin Lin,
Terence M. Bretz-Sullivan,
Xianjing Zhou,
John Pearson,
Brandon Fisher,
J. Samuel Jiang,
Wei Han,
Jian-Min Zuo,
Jianguo Wen,
Dillon D. Fong,
Jirong Sun,
Hua Zhou,
Anand Bhattacharya
Abstract:
The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating overlayers of either EuO or LaAlO$_3$. The superconducting transition temperature, approaching 2.2 K, is about one order of magnitude higher than that of the L…
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The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating overlayers of either EuO or LaAlO$_3$. The superconducting transition temperature, approaching 2.2 K, is about one order of magnitude higher than that of the LaAlO$_3$/SrTiO$_3$ system. Strikingly, similar electron gases at (001) KTaO$_3$ interfaces remain normal down to 25 mK. The critical field and current-voltage measurements indicate that the superconductivity is two dimensional. Higher mobility EuO/KTaO$_3$ (111) samples show a large in-plane anisotropy in transport properties at low temperatures prior to onset of superconductivity, suggesting the emergence of a stripe like phase where the superconductivity is nearly homogeneous in one direction, but strongly modulated in the other.
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Submitted 15 April, 2020;
originally announced April 2020.
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Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect
Authors:
Yongming Luo,
Changjiang Liu,
Hilal Saglam,
Yi Li,
Wei Zhang,
Steven S. -L. Zhang,
John E. Pearson,
Brandon Fisher,
Anand Bhattacharya,
Axel Hoffmann
Abstract:
Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic sublattices, especially in thin films and small-scale devices, remains a formidable challenge. So far, the existing read-out techniques such as anisotropic magnet…
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Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic sublattices, especially in thin films and small-scale devices, remains a formidable challenge. So far, the existing read-out techniques such as anisotropic magnetoresistance, tunneling anisotropic magnetoresistance, and spin-Hall magnetoresistance, are even functions of sublattice magnetization and thus allow us to detect different orientations of the Néel order for antiferromagnets with multiple easy axes. In contrast direct electrical detection of oppositely oriented spin states along the same easy axes (e.g., in uniaxial antiferromagnets) requires sensitivity to the direction of individual sublattices and thus is more difficult. In this study, using spin Seebeck effect, we report the electrical detection of the two sublattices in a uniaxial antiferromagnet Cr2O3. We find the rotational symmetry and hysteresis behavior of the spin Seebeck signals measured at the top and bottom surface reflect the dierction of the surface sublattice moments, but not the Néel order or the net moment in the bulk. Our results demonstrate the important role of interface spin sublattices in generating the spin Seebeck voltages, which provide a way to access each sublattice independently, enables us to track the full rotation of the magnetic sublattice, and distinguish different and antiparallel antiferromagnetic states in uniaxial antiferromagnets.
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Submitted 23 October, 2019;
originally announced October 2019.
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Search for power-efficient wide-range reversible resistance modulation of $VO_2$ single crystals
Authors:
Bertina Fisher,
Larisa Patlagan,
Lior Kornblum
Abstract:
The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at several ambient temperatures below the insulator-metal transition. The insulator-mixed-metal-insulator transition is induced by Joule heating above ambient temperatu…
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The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at several ambient temperatures below the insulator-metal transition. The insulator-mixed-metal-insulator transition is induced by Joule heating above ambient temperature in the range of negative differential resistivity (NDR). In this range the stability of V(I) is governed by the load resistance $R_L$. Steady state I(V) is obtained for $R_L> |dV/dI|_{max}$ in the NDR regime. For $R_L< |dV/dI|_{max}$ there is switching between initial and final steady states associated with peaks in the Joule power, that are higher the lower $R_L$ is. The peaks caused by steep switching are superfluous and damaging the samples. On the other hand, the large $R_L$ needed for steady state is the main power consumer in the circuit at high currents. The present work is motivated by the need to avoid damaging switching in the NDR regime while reducing the power consumption in the circuit. It is shown here that large resistance modulation can be obtained under steady state conditions with reduced power consumption by increasing the ambient temperature of the device above room temperature.
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Submitted 13 December, 2018;
originally announced December 2018.
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Transfer of Graphene with Protective Oxide Layers
Authors:
H. Grebel,
L. Stan,
A. V. Sumant,
Y. Liu,
D. Gosztola,
L. Ocola,
B. Fisher
Abstract:
Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by…
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Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.
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Submitted 8 June, 2018; v1 submitted 22 January, 2018;
originally announced January 2018.
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Systematics in the metal-insulator transition temperatures in vanadium oxides
Authors:
B. Fisher,
J. Genossar,
G. M. Reisner
Abstract:
Nine of the known vanadium oxides, VO$_{2-1/n}$ (n - a positive or negative integer) with n=2 - 6, 8, 9, $\infty$ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures T$_{MIT}$ (V$_7$O$_{13}$ is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-ph…
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Nine of the known vanadium oxides, VO$_{2-1/n}$ (n - a positive or negative integer) with n=2 - 6, 8, 9, $\infty$ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures T$_{MIT}$ (V$_7$O$_{13}$ is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in T$_{MIT}$ as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if T$_{MIT}$ is the absolute value of the difference between T$_M$(n) and T$_P$(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of T$_M$-T$_P$ versus 1/n lie on, or close to, two simple straight lines; one is T$_M$-T$_P$= T$_{\infty}$(7/n-1) for V$_3$O$_5$, V$_4$O$_7$, V$_5$O$_9$, V$_7$O$_{13}$, V$_8$O$_{15}$, V$_9$O$_{17}$ and VO$_2$ and the other is T$_M$-T$_P$= T$_{\infty}$(3/n-1) for V$_2$O$_3$, V$_6$O$_{11}$ and VO$_2$.
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Submitted 28 October, 2015;
originally announced October 2015.
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Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo0.9Ni0.1S1.8
Authors:
B. Fisher,
J. Genossar,
K. B. Chashka,
L. Patlagan,
G. M. Reisner
Abstract:
The layered compound BaCo1-xNixS2-y (0.05<x<0.2 and 0.05<y<0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (~ 40 K) and large volume change (~0.01). Here we report on unusual voltage-controlled resistive switching followed by current-contro…
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The layered compound BaCo1-xNixS2-y (0.05<x<0.2 and 0.05<y<0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (~ 40 K) and large volume change (~0.01). Here we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo1-xNixS2-y (nominal x=0.1 and y=0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.
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Submitted 10 April, 2014;
originally announced April 2014.
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Inter-grain tunneling in the half-metallic double-perovskites Sr$_2$BB'O$_6$ (BB'-- FeMo, FeRe, CrMo, CrW, CrRe
Authors:
B. Fisher,
J. Genossar,
K. B. Chashka,
L. Patlagan,
G. M. Reisner
Abstract:
The zero-field conductivities ($σ$) of the polycrystaline title materials, are governed by inter-grain transport. In the majority of cases their $σ$(T) can be described by the "fluctuation induced tunneling" model. Analysis of the results in terms of this model reveals two remarkable features: 1. For \emph{all} Sr$_2$FeMoO$_6$ samples of various microstructures, the tunneling constant (barrier wid…
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The zero-field conductivities ($σ$) of the polycrystaline title materials, are governed by inter-grain transport. In the majority of cases their $σ$(T) can be described by the "fluctuation induced tunneling" model. Analysis of the results in terms of this model reveals two remarkable features: 1. For \emph{all} Sr$_2$FeMoO$_6$ samples of various microstructures, the tunneling constant (barrier width $\times$ inverse decay-length of the wave-function) is $\sim$ 2, indicating the existence of an intrinsic insulating boundary layer with a well defined electronic (and magnetic) structure. 2. The tunneling constant for \emph{all} cold-pressed samples decreases linearly with increasing magnetic-moment/formula-unit.
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Submitted 4 June, 2013;
originally announced June 2013.
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Absence of charge-density-wave sliding in epitaxial charge-ordered Pr0.48Ca0.52MnO3 films
Authors:
B. Fisher,
J. Genossar,
L. Patlagan,
S. Kar-Narayan,
X. Moya,
D. Sánchez,
P. A. Midgley,
N. D. Mathur
Abstract:
For an epitaxial Pr0.48Ca0.52MnO3 film on NdGaO3, we use transmission electron microscopy to observe a "charge-ordered" superlattice along the in-plane direction a. The same film shows no electrical signatures of charge order. The in-plane electrical anisotropy (rho)a/(rho)c = 28 is constant, and there is no evidence of sliding charge density waves up to the large field of ~10^3 V/cm.
For an epitaxial Pr0.48Ca0.52MnO3 film on NdGaO3, we use transmission electron microscopy to observe a "charge-ordered" superlattice along the in-plane direction a. The same film shows no electrical signatures of charge order. The in-plane electrical anisotropy (rho)a/(rho)c = 28 is constant, and there is no evidence of sliding charge density waves up to the large field of ~10^3 V/cm.
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Submitted 10 March, 2010;
originally announced March 2010.
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Pulsed versus DC I-V characteristics of resistive manganites
Authors:
B. Fisher,
J. Genossar,
K. B. Chashka,
L. Patlagan,
G. M. Reisner
Abstract:
We report on pulsed and DC I-V characteristics of polycrystalline samples of three charge-ordered manganites, Pr_{2/3}Ca_{1/3}MnO_3, Pr_{1/2}Ca_{1/2}MnO_3, Bi_{1/2}Sr_{1/2}MnO_3 and of a double-perovskite Sr_2MnReO_6, in a temperature range where their ohmic resistivity obeys the Efros-Shklovskii variable range hopping relation. For all samples, the DC I(V) exhibits at high currents negative dif…
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We report on pulsed and DC I-V characteristics of polycrystalline samples of three charge-ordered manganites, Pr_{2/3}Ca_{1/3}MnO_3, Pr_{1/2}Ca_{1/2}MnO_3, Bi_{1/2}Sr_{1/2}MnO_3 and of a double-perovskite Sr_2MnReO_6, in a temperature range where their ohmic resistivity obeys the Efros-Shklovskii variable range hopping relation. For all samples, the DC I(V) exhibits at high currents negative differential resistance and hysteresis, which mask a perfectly ohmic or a moderately nonohmic conductivity obtained by pulsed measurements. This demonstrates that the widely used DC I-V measurements are usually misleading.
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Submitted 3 April, 2006;
originally announced April 2006.
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Muon Spin Relaxation Measurements in Na_xCoO_2*yH_2O
Authors:
A. Kanigel,
A. Keren,
L. Patlagan,
K. B. Chashka,
B. Fisher,
P. King,
A. Amato
Abstract:
Using the transverse field muon spin relaxation technique we measure the temperature dependence of the magnetic field penetration depth $λ$, in the Na$_{x}$CoO$_{2}\cdot y$H$_{2}$O system. We find that $λ,$ which is determined by superfluid density $n_{s}$ and the effective mass $m^{\ast}$, is very small and on the edge of the TF-$μ$SR sensitivity. Nevertheless, the results indicate that the ord…
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Using the transverse field muon spin relaxation technique we measure the temperature dependence of the magnetic field penetration depth $λ$, in the Na$_{x}$CoO$_{2}\cdot y$H$_{2}$O system. We find that $λ,$ which is determined by superfluid density $n_{s}$ and the effective mass $m^{\ast}$, is very small and on the edge of the TF-$μ$SR sensitivity. Nevertheless, the results indicate that the order parameter in this system has nodes and that it obeys the Uemura relation. By comparing $λ$ with the normal state electron density we conclude that $m^{\ast}$ of the superconductivity carrier is 70 times larger than the mass of bare electrons.
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Submitted 25 November, 2003; v1 submitted 18 November, 2003;
originally announced November 2003.
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Cohomology for Anyone
Authors:
David A. Rabson,
John F. Huesman,
Benji N. Fisher
Abstract:
Crystallography has proven a rich source of ideas over several centuries. Among the many ways of looking at space groups, N. David Mermin has pioneered the Fourier-space approach. Recently, we have supplemented this approach with methods borrowed from algebraic topology. We now show what topology, which studies global properties of manifolds, has to do with crystallography. No mathematics is ass…
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Crystallography has proven a rich source of ideas over several centuries. Among the many ways of looking at space groups, N. David Mermin has pioneered the Fourier-space approach. Recently, we have supplemented this approach with methods borrowed from algebraic topology. We now show what topology, which studies global properties of manifolds, has to do with crystallography. No mathematics is assumed beyond what the typical physics or crystallography student will have seen of group theory; in particular, the reader need not have any prior exposure to topology or to cohomology of groups.
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Submitted 30 January, 2003;
originally announced January 2003.
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Impulse distributions in dense granular flows: signatures of large-scale spatial structures
Authors:
A. Ferguson,
B. Fisher,
B. Chakraborty
Abstract:
In this paper we report the results of simulations of a 2D gravity driven, dissipative granular flow through a hopper system. Measurements of impulse distributions P(I) on the simulated system show flow-velocity-invariant behavior of the distribution for impulses larger than the average impulse <I>. For small impulses, however, P(I) decreases significantly with flow velocity, a phenomenon which…
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In this paper we report the results of simulations of a 2D gravity driven, dissipative granular flow through a hopper system. Measurements of impulse distributions P(I) on the simulated system show flow-velocity-invariant behavior of the distribution for impulses larger than the average impulse <I>. For small impulses, however, P(I) decreases significantly with flow velocity, a phenomenon which can be attributed exclusively to collisions between grains undergoing frequent collisions. Visualizations of the system also show that these frequently colliding particles tend to form increasingly large linear clusters as the flow velocity decreases. A model is proposed for the form of P(I), given distributions of cluster size and velocity, which accurately predicts the observed form of the distribution. Thus the impulse distribution provides some insight into the formation and properties of these ``dynamic'' force chains.
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Submitted 13 January, 2003; v1 submitted 13 January, 2003;
originally announced January 2003.
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Fourier-Space Crystallography as Group Cohomology
Authors:
David A. Rabson,
Benji Fisher
Abstract:
We reformulate Fourier-space crystallography in the language of cohomology of groups. Once the problem is understood as a classification of linear functions on the lattice, restricted by a particular group relation, and identified by gauge transformation, the cohomological description becomes natural. We review Fourier-space crystallography and group cohomology, quote the fact that cohomology is…
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We reformulate Fourier-space crystallography in the language of cohomology of groups. Once the problem is understood as a classification of linear functions on the lattice, restricted by a particular group relation, and identified by gauge transformation, the cohomological description becomes natural. We review Fourier-space crystallography and group cohomology, quote the fact that cohomology is dual to homology, and exhibit several results, previously established for special cases or by intricate calculation, that fall immediately out of the formalism. In particular, we prove that {\it two phase functions are gauge equivalent if and only if they agree on all their gauge-invariant integral linear combinations} and show how to find all these linear combinations systematically.
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Submitted 8 May, 2001; v1 submitted 2 May, 2001;
originally announced May 2001.
