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Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
Authors:
Muqing Yu,
Changjiang Liu,
Dengyu Yang,
Xi Yan,
Qianheng Du,
Dillon D. Fong,
Anand Bhattacharya,
Patrick Irvin,
Jeremy Levy
Abstract:
Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces.…
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Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.
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Submitted 7 January, 2022;
originally announced January 2022.
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Discovery of two-dimensional anisotropic superconductivity at KTaO$_3$ (111) interfaces
Authors:
Changjiang Liu,
Xi Yan,
Dafei Jin,
Yang Ma,
Haw-Wen Hsiao,
Yulin Lin,
Terence M. Bretz-Sullivan,
Xianjing Zhou,
John Pearson,
Brandon Fisher,
J. Samuel Jiang,
Wei Han,
Jian-Min Zuo,
Jianguo Wen,
Dillon D. Fong,
Jirong Sun,
Hua Zhou,
Anand Bhattacharya
Abstract:
The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating overlayers of either EuO or LaAlO$_3$. The superconducting transition temperature, approaching 2.2 K, is about one order of magnitude higher than that of the L…
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The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating overlayers of either EuO or LaAlO$_3$. The superconducting transition temperature, approaching 2.2 K, is about one order of magnitude higher than that of the LaAlO$_3$/SrTiO$_3$ system. Strikingly, similar electron gases at (001) KTaO$_3$ interfaces remain normal down to 25 mK. The critical field and current-voltage measurements indicate that the superconductivity is two dimensional. Higher mobility EuO/KTaO$_3$ (111) samples show a large in-plane anisotropy in transport properties at low temperatures prior to onset of superconductivity, suggesting the emergence of a stripe like phase where the superconductivity is nearly homogeneous in one direction, but strongly modulated in the other.
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Submitted 15 April, 2020;
originally announced April 2020.
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Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge
Authors:
Hyoungjeen Jeen,
Woo Seok Choi,
Michael D. Biegalski,
Chad M. Folkman,
I-Cheng Tung,
Dillon D. Fong,
John W. Freeland,
Dongwon Shin,
Hiromichi Ohta,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here…
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Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here, we report a significant lowering of the redox temperature by epitaxial stabilization of strontium cobaltites (SrCoOx) grown directly as one of two distinct crystalline phases, either the perovskite SrCoO3-δ or the brownmillerite SrCoO2.5. Importantly, these two phases can be reversibly switched at a remarkably reduced temperature (200~300 °C) in a considerably short time (< 1 min) without destroying the parent framework. The fast, low temperature redox activity in SrCoO3-δ is attributed to a small Gibbs free energy difference between two topotatic phases. Our findings thus provide useful information for developing highly sensitive electrochemical sensors and low temperature cathode materials.
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Submitted 26 August, 2013;
originally announced August 2013.
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Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces
Authors:
Woo Seok Choi,
Christopher M. Rouleau,
Sung Seok A. Seo,
Zhenlin Luo,
Hua Zhou,
Timothy T. Fister,
Jeffrey A. Eastman,
Paul H. Fuoss,
Dillon D. Fong,
Jonathan Z. Tischler,
Gyula Eres,
Matthew F. Chisholm,
Ho Nyung Lee
Abstract:
Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most impo…
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Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in shaping a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces.
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Submitted 6 October, 2012;
originally announced October 2012.
