Showing 1–18 of 18 results for author: Fournier, T

Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene

Authors: Tom Fournier, Kelvin Cruz, Marc Monthioux, Benjamin Lassagne, Lionel Petit, Sébastien Moyano, Pascal Puech, Fabrice Piazza

Abstract: Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying… ▽ More Creating defects in graphene by hydrogenation, either to achieve hydrogen chemisorption or partial etching, is a way to open an electronic band gap in graphene. Understanding the range of stability conditions of partially etched or hydrogenated graphene is crucial for application, as processing conditions (e.g. temperature) and quality control (characterization) conditions may result in modifying the material through partial or full dehydrogenation, and subsequent alteration of its electronic properties. This work reports a study of various dehydrogenation conditions of hydrogenated or hydrogen-etched monolayer graphene (1LG), either free-standing or supported by an interferential (SiO2/Si) substrate, using incremental annealing under nitrogen atmosphere up to 400 {\textdegree}C. Materials were investigated by Raman spectroscopy. Indeed, it has been known since 2012 that the intensity ratio of two Raman bands activated by double resonance, D over D' (ID/ID') can be used to identify the type of defects in defective graphene. It is shown that hydrogenated 1LG, characterized by a large ID/ID' ratio (~9-15), is stable provided annealing remains below 300 {\textdegree}C. On the other hand, defective 1LG resulting from hydrogen etching remains stable up to 400 {\textdegree}C, whether the 1LG is hydrogenated on one side or both sides, while a modification in the type and proportions of defects is likely. Experimental conditions for the safe use of Raman spectroscopy, otherwise able to induce specimen overheating because of the laser energy and power, are also determined and discussed. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Journal ref: Materials Chemistry and Physics, 2024, 321, pp.129490

Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity

Authors: Lionel Petit, Tom Fournier, Géraldine Ballon, Cédric Robert, Delphine Lagarde, Pascal Puech, Thomas Blon, Benjamin Lassagne

Abstract: Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. He… ▽ More Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors. △ Less

Submitted 17 March, 2024; originally announced March 2024.

Comments: 27 pages including supplemental material, 12 figures in the main text and 6 figures in the supplemental material

Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication

Authors: Maria Spies, Zahra Sadre-Momtaz, Jonas Lähnemann, Minh Anh Luong, Bruno Fernandez, Thierry Fournier, Eva Monroy, Martien I. den Hertog

Abstract: Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular obj… ▽ More Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membranes crucial to these correlated and in-situ measurements. △ Less

Submitted 2 December, 2021; v1 submitted 24 January, 2020; originally announced January 2020.

Comments: This is an author-created, un-copyedited version of a topical review published in Nanotechnology. IOP Publishing Ltd. is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab99f0

Journal ref: Nanotechnology 31, 472001 (2020)

Silicon Vibrating Wires at Low Temperatures

Authors: Eddy Collin, Laure Filleau, Thierry Fournier, Yuriy M. Bunkov, Henri Godfrin

Abstract: Nowadays microfabrication techniques originating from micro-electronics enable to create mechanical objects of micron-size. The field of Micro-Electro-Mechanical devices (MEMS) is continuously expanding, with an amazingly broad range of applications at room temperature. Vibrating objects (torsional oscillators, vibrating wires) widely used at low temperatures to study quantum fluids, can be replac… ▽ More Nowadays microfabrication techniques originating from micro-electronics enable to create mechanical objects of micron-size. The field of Micro-Electro-Mechanical devices (MEMS) is continuously expanding, with an amazingly broad range of applications at room temperature. Vibrating objects (torsional oscillators, vibrating wires) widely used at low temperatures to study quantum fluids, can be replaced advantageously by Silicon MEMS. In this letter we report on the study of Silicon vibrating wire devices. A goal-post structure covered with a metal layer is driven at resonance by the Laplace force acting on a current in a magnetic field, while the induced voltage arising from the cut magnetic flux allows to detect the motion. The characteristics of the resonance have been studied from 10 mK to 30 K, in vacuum and in $^4$He gas. In this article, we focus on the results obtained above 1.5 K, in vacuum and gas, and introduce some features observed at lower temperatures. The resonant properties can be quantitatively understood by means of simple models, from the linear regime to a highly non-linear response at strong drives. We demonstrate that the non-linearity is mostly due to the geometry of the vibrators. We also show that in our device the friction mechanisms originate in the metallic layers, and can be fully characterized. The interaction with $^4$He gas is fit to theory without adjustable parameters. △ Less

Submitted 23 February, 2018; originally announced February 2018.

Comments: Long paper. Both experiment and theory

Journal ref: J. of Low Temp. Phys., vol. 150, no 5-6, p. 739 - 790 (2008)

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

Authors: Jonas Lähnemann, Martien Den Hertog, Pascal Hille, María de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy

Abstract: We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark cu… ▽ More We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity, and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. In consequence, the time response is rather independent of the dark current. △ Less

Submitted 20 June, 2017; v1 submitted 27 April, 2016; originally announced April 2016.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2016), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b00806

Journal ref: Nano Letters 16, 3260 (2016)

Reversibility of Superconducting Nb Weak Links Driven by the Proximity Effect in a Quantum Interference Device

Authors: Nikhil Kumar, T. Fournier, H. Courtois, C. B. Winkelmann, Anjan K. Gupta

Abstract: We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic… ▽ More We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic or not. Below the superconductor critical temperature, the critical current switches from a classical weak-link behavior to one driven by the proximity effect. The associated small amplitude of the critical current makes it robust with respect to the heat generation by phase-slips, leading to a non-hysteretic behavior. △ Less

Submitted 4 June, 2015; v1 submitted 26 November, 2014; originally announced November 2014.

Comments: 6 pages, 5 figures, including Supplementary Information

Journal ref: Phys. Rev. Lett. 114, 157003 (2015)

Phonon Heat Conduction in Corrugated Silicon Nanowires Below the Casimir Limit

Authors: Christophe Blanc, Ali Rajabpour, Sebastian Volz, Thierry Fournier, Olivier Bourgeois

Abstract: The thermal conductance of straight and corrugated monocrystalline silicon nanowires has been measured between 0.3 K and 5 K. The difference in the thermal transport between corrugated nanowires and straight ones demonstrates a strong reduction in the mean free path of the phonons. This averaged mean free path is remarkably smaller than the smaller diameter of the nanowire, evidencing a phonon the… ▽ More The thermal conductance of straight and corrugated monocrystalline silicon nanowires has been measured between 0.3 K and 5 K. The difference in the thermal transport between corrugated nanowires and straight ones demonstrates a strong reduction in the mean free path of the phonons. This averaged mean free path is remarkably smaller than the smaller diameter of the nanowire, evidencing a phonon thermal transport reduced below the Casimir limit. Monte Carlo simulations highlight that this effect can be attributed to significant multiple scattering of ballistic phonons occuring on the corrugated surfaces. This result suggests an original approach to transforming a monocrystalline material into a phonon glass. △ Less

Submitted 17 April, 2013; v1 submitted 18 February, 2013; originally announced February 2013.

Journal ref: Applied Physics Letters 103, 4 (2013) 043109

Fabrication of stable and reproducible sub-micron tunnel junctions

Authors: I. M. Pop, T. Fournier, T. Crozes, F. Lecocq, I. Matei, B. Pannetier, O. Buisson, W. Guichard

Abstract: We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on larg… ▽ More We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on large ensembles of junctions which prove the reproducibility of the fabrication process. The measured tunnel resistance variance in large ensembles of identically fabricated junctions is in the range of only a few percents. Finally, we have studied the effect of different thermal treatments on the junction barrier. This is especially important for multiple step fabrication processes which imply annealing the junction. △ Less

Submitted 31 May, 2011; originally announced May 2011.

Comments: 4 pages, 3 figures

Persistence of superconductivity in niobium ultrathin films grown on R-Plane Sapphire

Authors: Cécile Delacour, Luc Ortega, Marc Faucher, Thierry Crozes, Thierry Fournier, Bernard Pannetier, Vincent Bouchiat

Abstract: We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state… ▽ More We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films showing that hetero-epitaxy is not achieved under a thickness of 3.3nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9ML) has an offset critical temperature above 4.2K and can be processed by standard nanofabrication techniques to generate air- and time-stable superconducting nanostructures, useful for quantum devices. △ Less

Submitted 2 February, 2011; originally announced February 2011.

Comments: 22 pages, 8 figures, to appear in Physical Review B (2011)

Journal ref: Physical Review B, vol. 83, 144504 (2011)

Novel E-beam lithography technique for in-situ junction fabrication: the controlled undercut

Authors: Florent Lecocq, Cécile Naud, Ioan M. Pop, Zhi-Hui Peng, Iulian Matei, Thierry Crozes, Thierry Fournier, Wiebke Guichard, Olivier Buisson

Abstract: We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors without the use of the well-known suspended bridge[1]. The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible ra… ▽ More We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors without the use of the well-known suspended bridge[1]. The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible range of the junction size, from 0.01 to more than 10000 micron square. We have fabricated Al/AlOx/Al Josephson junctions, phase qubit and capacitors using a 100kV E- beam writer. Although this high voltage enables a precise control of the undercut, implementation using a conventional 20kV E-beam is also discussed. The phase qubit coherence times, extracted from spectroscopy resonance width, Rabi and Ramsey oscillations decay and energy relaxation measurements, are longer than the ones obtained in our previous samples realized by standard techniques. These results demonstrate the high quality of the junction obtained by this controlled undercut technique. △ Less

Submitted 2 February, 2011; v1 submitted 24 January, 2011; originally announced January 2011.

Comments: Submitted to Nanotechnology

Journal ref: Nanotechnology 22 (2011) 315302

Contacting individual Fe(110) dots in a single electron-beam lithography step

Authors: Fabien Cheynis, Helge Haas, Thierry Fournier, Laurent Ranno, Wolfgang Wernsdorfer, Olivier Fruchart, Jean-Christophe Toussaint

Abstract: We report on a new approach, entirely based on electron-beam lithography technique, to contact electrically, in a four-probe scheme, single nanostructures obtained by self-assembly. In our procedure, nanostructures of interest are localised and contacted in the same fabrication step. This technique has been developed to study the field-induced reversal of an internal component of an asymmetric B… ▽ More We report on a new approach, entirely based on electron-beam lithography technique, to contact electrically, in a four-probe scheme, single nanostructures obtained by self-assembly. In our procedure, nanostructures of interest are localised and contacted in the same fabrication step. This technique has been developed to study the field-induced reversal of an internal component of an asymmetric Bloch domain wall observed in elongated structures such as Fe(110) dots. We have focused on the control, using an external magnetic field, of the magnetisation orientation within Néel caps that terminate the domain wall at both interfaces. Preliminary magneto-transport measurements are discussed demonstrating that single Fe(110) dots have been contacted. △ Less

Submitted 23 February, 2009; originally announced February 2009.

Comments: 5 pages

Journal ref: Nanotechnology 20 (2009) 285302

Andreev Current-Induced Dissipation in a Hybrid Superconducting Tunnel Junction

Authors: Sukumar Rajauria, Philippe Gandit, Thierry Fournier, F. W. J. Hekking, Bernard Pannetier, Hervé Courtois

Abstract: We have studied hybrid superconducting micro-coolers made of a double Superconductor-Insulator-Normal metal tunnel junction. Under subgap conditions, the Andreev current is found to dominate the single-particle tunnel current. We show that the Andreev current introduces additional dissipation in the normal metal equivalent to Joule heating. By analyzing quantitatively the heat balance in the sys… ▽ More We have studied hybrid superconducting micro-coolers made of a double Superconductor-Insulator-Normal metal tunnel junction. Under subgap conditions, the Andreev current is found to dominate the single-particle tunnel current. We show that the Andreev current introduces additional dissipation in the normal metal equivalent to Joule heating. By analyzing quantitatively the heat balance in the system, we provide a full description of the evolution of the electronic temperature with the voltage. The dissipation induced by the Andreev current is found to dominate the quasiparticle tunneling-based cooling over a large bias range. △ Less

Submitted 3 June, 2008; v1 submitted 18 February, 2008; originally announced February 2008.

Journal ref: Physical Review Letters 100 (2008) 207002

Electron and phonon Cooling in a Superconductor - Normal Metal - Superconductor Tunnel Junction

Authors: Sukumar Rajauria, P. S. Luo, T. Fournier, F. W. J. Hekking, H. Courtois, B. Pannetier

Abstract: We present evidence for the cooling of normal metal phonons by electron tunneling in a Superconductor - Normal metal - Superconductor tunnel junction. The normal metal electron temperature is extracted by comparing the device current-voltage characteristics to the theoretical prediction. We use a quantitative model for the phonon cooling that includes the electron-phonon coupling in the normal m… ▽ More We present evidence for the cooling of normal metal phonons by electron tunneling in a Superconductor - Normal metal - Superconductor tunnel junction. The normal metal electron temperature is extracted by comparing the device current-voltage characteristics to the theoretical prediction. We use a quantitative model for the phonon cooling that includes the electron-phonon coupling in the normal metal and the Kapitza resistance between the substrate and the metal. It gives an excellent fit to the data and enables us to extract an effective phonon temperature in the normal metal. △ Less

Submitted 8 May, 2007; v1 submitted 1 December, 2006; originally announced December 2006.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 99, 047004 (2007)

Measurement of thermal conductance of silicon nanowires at low temperature

Authors: Olivier Bourgeois, T. Fournier, J. Chaussy

Abstract: We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3 method. The cross-section of the nanowire ap… ▽ More We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3 method. The cross-section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry. △ Less

Submitted 31 August, 2006; originally announced August 2006.

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an Atomic Force Microscope

Authors: M. Faucher, T. Fournier, B. Pannetier, C. Thirion, W. Wernsdorfer, J. C. Villegier, V. Bouchiat

Abstract: We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an Atomic Force Microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using the voltage biased tip of the AFM. The SQUIDs are of weak-link type, for which two geometries have been tested: Dayem and variable thickness nanobridg… ▽ More We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an Atomic Force Microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using the voltage biased tip of the AFM. The SQUIDs are of weak-link type, for which two geometries have been tested: Dayem and variable thickness nanobridges. The magnetic field dependence of the maximum supercurrent Ic(flux) in resulting SQUIDs is thoroughly measured for different weak link geometries and for both tested materials. It is found that the modulation shape and depth of Ic(flux) curves are greatly dependent on the weak link size. We analyze the results taking into account the kinetic inductance of nanobridges and using the Likharev-Yakobson model. Finally we show that the present resolution reached by this technique (20nm) enables us to fabricate Nb weak-links which behavior approaches those of ideal Josephson junctions. △ Less

Submitted 19 November, 2001; originally announced November 2001.

Comments: 22 pages, 8 figures

Journal ref: Physica C 368, 211 (2002)

Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films

Authors: V. Bouchiat, M. Faucher, C. Thirion, W. Wernsdorfer, T. Fournier, B. Pannetier

Abstract: We present a method for fabricating Josephson junctions and superconducting quantum interference devices (SQUIDs) which is based on the local anodization of niobium strip lines 3 to 6.5 nm-thick under the voltage-biased tip of an Atomic Force Microscope. Microbridge junctions and SQUID loops are obtained either by partial or total oxidation of the niobium layer. Two types of weak link geometries… ▽ More We present a method for fabricating Josephson junctions and superconducting quantum interference devices (SQUIDs) which is based on the local anodization of niobium strip lines 3 to 6.5 nm-thick under the voltage-biased tip of an Atomic Force Microscope. Microbridge junctions and SQUID loops are obtained either by partial or total oxidation of the niobium layer. Two types of weak link geometries are fabricated : lateral constriction (Dayem bridges) and variable thickness bridges. SQUIDs based on both geometries show a modulation of the maximum Josephson current with a magnetic flux periodic with respect to the superconducting flux quantum h/2e. They persist up to 4K. The modulation shape and depth for SQUIDs based on variable thickness bridges indicate that the weak link size becomes comparable to the superconducting film coherence length which is of the order of 10nm. △ Less

Submitted 12 July, 2001; originally announced July 2001.

Comments: 12 pages

Journal ref: Appl. Phys. Lett. 79, 123 (2001)

Localization Effect in a 2D Superconducting Network without Disorder

Authors: B. Pannetier, C. C. Abilio, E. Serret, Th. Fournier, P. Butaud, J. Vidal

Abstract: The superconducting properties of a two-dimensional superconducting wire network with a new geometry have been measured as a function of the external magnetic field. The extreme localization effect recently predicted for this periodic lattice is revealed as a suppression of the critical current when the applied magnetic field corresponds to half a flux quantum per unit cell. For this particular… ▽ More The superconducting properties of a two-dimensional superconducting wire network with a new geometry have been measured as a function of the external magnetic field. The extreme localization effect recently predicted for this periodic lattice is revealed as a suppression of the critical current when the applied magnetic field corresponds to half a flux quantum per unit cell. For this particular magnetic field, the observed vortex state configuration is highly disordered. △ Less

Submitted 6 July, 2000; v1 submitted 16 May, 2000; originally announced May 2000.

Comments: 6 pages, 2 eps figures, submitted to Physica C. Title changed

Report number: Proceedings of the International Symposium on Mesoscopic Superconductivity MS2000, Kanagawa Japan (March 8-10, 2000)

Journal ref: Physica C 352 (2001) 41-45

Magnetic field induced localization in a two-dimensional superconducting wire network

Authors: C. C. Abilio, P. Butaud, Th. Fournier, J. Vidal, S. Tedesco, B. Dalzotto, B. Pannetier

Abstract: We report transport measurements on superconducting wire networks which provide the first experimental evidence of a new localization phenomenon induced by magnetic field on a 2D periodic structure. In the case of a superconducting wave function this phenomenon manifests itself as a depression of the network critical current and of the superconducting transition temperature at a half magnetic fl… ▽ More We report transport measurements on superconducting wire networks which provide the first experimental evidence of a new localization phenomenon induced by magnetic field on a 2D periodic structure. In the case of a superconducting wave function this phenomenon manifests itself as a depression of the network critical current and of the superconducting transition temperature at a half magnetic flux quantum per tile. In addition, the strong broadening of the resistive transition observed at this field is consistent with enhanced phase fluctuations due to this localization mechanism. △ Less

Submitted 14 May, 2000; v1 submitted 13 July, 1999; originally announced July 1999.

Comments: 4 pages, 3 eps figures, final version with minor changes

Journal ref: Phys. Rev. Lett. 83, 5102 (1999)