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Isolation of Single Donors in ZnO
Authors:
Ethan R. Hansen,
Vasileios Niaouris,
Bethany E. Matthews,
Christian Zimmermann,
Xingyi Wang,
Roman Kolodka,
Lasse Vines,
Steven R. Spurgeon,
Kai-Mei C. Fu
Abstract:
The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The…
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The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.
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Submitted 17 January, 2024; v1 submitted 9 October, 2023;
originally announced October 2023.
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Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO
Authors:
Vasileios Niaouris,
Samuel H. D'Ambrosia,
Christian Zimmermann,
Xingyi Wang,
Ethan R. Hansen,
Michael Titze,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound excito…
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Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound exciton optical linewidth properties of Al, Ga, and In donors in single-crystal ZnO. The ensemble photoluminescence linewidth ranges from 4-11 GHz, less than two orders of magnitude larger than the expected lifetime-limited linewidth. The ensemble linewidth remains narrow in absorption through samples with an estimated optical depth up to several hundred. The primary thermal relaxation mechanism is identified and found to have a negligible contribution to the total linewidth at 2 K. We find that inhomogeneous broadening due to the disordered isotopic environment in natural ZnO is significant, contributing 2 GHz. Two-laser spectral hole burning measurements, indicate the dominant mechanism, however, is homogeneous. Despite this broadening, the high homogeneity, large optical depth and potential for isotope purification indicate that the optical properties of the ZnO donor-bound exciton are promising for a wide range of quantum technologies and motivate a need to improve the isotope and chemical purity of ZnO for quantum technologies.
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Submitted 17 January, 2024; v1 submitted 24 July, 2023;
originally announced July 2023.
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Ensemble spin relaxation of shallow donor qubits in ZnO
Authors:
Vasileios Niaouris,
Mikhail V. Durnev,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Christian Zimmermann,
Aswin Vishnuradhan,
Y. Kozuka,
M. Kawasaki,
Kai-Mei C. Fu
Abstract:
We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic ex…
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We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling.
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Submitted 15 April, 2022; v1 submitted 22 November, 2021;
originally announced November 2021.
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Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond
Authors:
Srivatsa Chakravarthi,
Christian Pederson,
Zeeshawn Kazi,
Andrew Ivanov,
Kai-Mei C. Fu
Abstract:
Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance sp…
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Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.
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Submitted 6 August, 2021; v1 submitted 19 May, 2021;
originally announced May 2021.
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Optical spin control and coherence properties of acceptor bound holes in strained GaAs
Authors:
Xiayu Linpeng,
Todd Karin,
Mikhail V. Durnev,
Mikhail M. Glazov,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pumping and coherent population trapping for acceptor-bound holes in a strained GaAs epitaxial la…
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Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pumping and coherent population trapping for acceptor-bound holes in a strained GaAs epitaxial layer. We find $μ$s-scale longitudinal spin relaxation time T$_1$ and an inhomogeneous dephasing time T$_2^*$ of $\sim$7~ns. We attribute the spin relaxation mechanism to a combination effect of a hole-phonon interaction through the deformation potentials and a heavy-hole light-hole mixing in an in-plane magnetic field. We attribute the short T$_2^*$ to g-factor broadening due to strain inhomogeneity. T$_1$ and T$_2^*$ are quantitatively calculated based on these mechanisms and compared with the experimental results. While the hyperfine-mediated decoherence is mitigated, our results highlight the important contribution of strain to relaxation and dephasing of acceptor-bound hole spins.
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Submitted 13 December, 2020;
originally announced December 2020.
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Probing topological spin structures using light-polarization and magnetic microscopy
Authors:
Till Lenz,
Georgios Chatzidrosos,
Zhiyuan Wang,
Lykourgos Bougas,
Yannick Dumeige,
Arne Wickenbrock,
Nico Kerber,
Jakub Zázvorka,
Fabian Kammerbauer,
Mathias Kläui,
Zeeshawn Kazi,
Kai-Mei C. Fu,
Kohei Itoh,
Hideyuki Watanabe,
Dmitry Budker
Abstract:
We present an imaging modality that enables detection of magnetic moments and their resulting stray magnetic fields. We use wide-field magnetic imaging that employs a diamond-based magnetometer and has combined magneto-optic detection (e.g. magneto-optic Kerr effect) capabilities. We employ such an instrument to image magnetic (stripe) domains in multilayered ferromagnetic structures.
We present an imaging modality that enables detection of magnetic moments and their resulting stray magnetic fields. We use wide-field magnetic imaging that employs a diamond-based magnetometer and has combined magneto-optic detection (e.g. magneto-optic Kerr effect) capabilities. We employ such an instrument to image magnetic (stripe) domains in multilayered ferromagnetic structures.
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Submitted 7 October, 2020;
originally announced October 2020.
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Wide-field dynamic magnetic microscopy using double-double quantum driving of a diamond defect ensemble
Authors:
Zeeshawn Kazi,
Isaac M. Shelby,
Hideyuki Watanabe,
Kohei M. Itoh,
Vaithiyalingam Shutthanandan,
Paul A. Wiggins,
Kai-Mei C. Fu
Abstract:
Wide-field magnetometry can be realized by imaging the optically-detected magnetic resonance of diamond nitrogen vacancy (NV) center ensembles. However, NV ensemble inhomogeneities significantly limit the magnetic-field sensitivity of these measurements. We demonstrate a double-double quantum (DDQ) driving technique to facilitate wide-field magnetic imaging of dynamic magnetic fields at a micron s…
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Wide-field magnetometry can be realized by imaging the optically-detected magnetic resonance of diamond nitrogen vacancy (NV) center ensembles. However, NV ensemble inhomogeneities significantly limit the magnetic-field sensitivity of these measurements. We demonstrate a double-double quantum (DDQ) driving technique to facilitate wide-field magnetic imaging of dynamic magnetic fields at a micron scale. DDQ imaging employs four-tone radio frequency pulses to suppress inhomogeneity-induced variations of the NV resonant response. As a proof-of-principle, we use the DDQ technique to image the dc magnetic field produced by individual magnetic-nanoparticles tethered by single DNA molecules to a diamond sensor surface. This demonstrates the efficacy of the diamond NV ensemble system in high-frame-rate magnetic microscopy, as well as single-molecule biophysics applications.
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Submitted 15 January, 2021; v1 submitted 14 February, 2020;
originally announced February 2020.
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Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures
Authors:
Ding Zhong,
Kyle L. Seyler,
Xiayu Linpeng,
Nathan P. Wilson,
Takashi Taniguchi,
Kenji Watanabe,
Michael A. McGuire,
Kai-Mei C. Fu,
Di Xiao,
Wang Yao,
Xiaodong Xu
Abstract:
Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing hete…
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Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.
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Submitted 12 January, 2020;
originally announced January 2020.
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Quantum Simulators: Architectures and Opportunities
Authors:
Ehud Altman,
Kenneth R. Brown,
Giuseppe Carleo,
Lincoln D. Carr,
Eugene Demler,
Cheng Chin,
Brian DeMarco,
Sophia E. Economou,
Mark A. Eriksson,
Kai-Mei C. Fu,
Markus Greiner,
Kaden R. A. Hazzard,
Randall G. Hulet,
Alicia J. Kollar,
Benjamin L. Lev,
Mikhail D. Lukin,
Ruichao Ma,
Xiao Mi,
Shashank Misra,
Christopher Monroe,
Kater Murch,
Zaira Nazario,
Kang-Kuen Ni,
Andrew C. Potter,
Pedram Roushan
, et al. (12 additional authors not shown)
Abstract:
Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati…
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Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education.
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Submitted 20 December, 2019; v1 submitted 14 December, 2019;
originally announced December 2019.
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Microscopic model of stacking-fault potential and exciton wave function in GaAs
Authors:
Mikhail V. Durnev,
Mikhail M. Glazov,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Bethany Matthews,
Steven R. Spurgeon,
P. V. Sushko,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated…
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Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
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Submitted 1 November, 2019;
originally announced November 2019.
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A window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers
Authors:
Srivatsa Chakravarthi,
Chris Moore,
April Opsvig,
Christian Pederson,
Emma Hunt,
Andrew Ivanov,
Ian Christen,
Scott Dunham,
Kai-Mei C Fu
Abstract:
Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can…
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Knowledge of the nitrogen-vacancy center formation kinetics in diamond is critical to engineering sensors and quantum information devices based on this defect. Here we utilize the longitudinal tracking of single NV centers to elucidate NV defect kinetics during high-temperature annealing from 800-1100 $^\circ$C in high-purity chemical-vapor-deposition diamond. We observe three phenomena which can coexist: NV formation, NV quenching, and NV orientation changes. Of relevance to NV-based applications, a 6 to 24-fold enhancement in the NV density, in the absence of sample irradiation, is observed by annealing at 980 $^\circ$C, and NV orientation changes are observed at 1050 $^\circ$C. With respect to the fundamental understanding of defect kinetics in ultra-pure diamond, our results indicate a significant vacancy source can be activated for NV creation between 950-980 $^\circ$C and suggests that native hydrogen from NVH$_y$ complexes plays a dominant role in NV quenching, in agreement with recent {\it ab initio} calculations. Finally, the direct observation of orientation changes allows us to estimate an NV diffusion barrier of 5.1~eV.
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Submitted 23 November, 2019; v1 submitted 17 July, 2019;
originally announced July 2019.
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Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe$_2$/CrI$_3$ Heterostructures
Authors:
Kyle L. Seyler,
Ding Zhong,
Bevin Huang,
Xiayu Linpeng,
Nathan P. Wilson,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
Di Xiao,
Michael A. McGuire,
Kai-Mei C. Fu,
Xiaodong Xu
Abstract:
Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polar…
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Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polarized optical pulses. However, sweeping large magnetic fields is impractical for devices, and the pseudo-magnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to control valley physics via van der Waals heterostructure engineering. Here we demonstrate wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser excitation power in heterostructures formed by monolayer WSe$_2$ and 2D magnetic chromium triiodide (CrI$_3$). The valley manipulation is realized via optical control of the CrI$_3$magnetization, which tunes the magnetic exchange field over a range of 20 T. Our results reveal a convenient new path towards optical control of valley pseudospins and van der Waals magnetic heterostructures.
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Submitted 22 May, 2018;
originally announced May 2018.
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Inverse Design of Compact Multimode Cavity Couplers
Authors:
Weiliang Jin,
Sean Molesky,
Zin Lin,
Kai-Mei C. Fu,
Alejandro W. Rodriguez
Abstract:
Efficient coupling between on-chip sources and cavities plays a key role in silicon photonics. However, despite the importance of this basic functionality, there are few systematic design tools to simultaneously control coupling between multiple modes in a compact resonator and a single waveguide. Here, we propose a large-scale adjoint optimization approach to produce wavelength-scale waveguide--c…
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Efficient coupling between on-chip sources and cavities plays a key role in silicon photonics. However, despite the importance of this basic functionality, there are few systematic design tools to simultaneously control coupling between multiple modes in a compact resonator and a single waveguide. Here, we propose a large-scale adjoint optimization approach to produce wavelength-scale waveguide--cavity couplers operating over tunable and broad frequency bands. We numerically demonstrate couplers discovered by this method that can achieve critical, or nearly critical, coupling between multi-ring cavities and a single waveguide at up to six widely separated wavelengths spanning the $560$--$1500$~nm range of interest for on-chip nonlinear optical devices.
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Submitted 2 September, 2018; v1 submitted 15 March, 2018;
originally announced March 2018.
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Frequency control of single quantum emitters in integrated photonic circuits
Authors:
Emma R. Schmidgall,
Srivatsa Chakravarthi,
Michael Gould,
Ian R. Christen,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect…
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Submitted 23 February, 2018;
originally announced February 2018.
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Coherence properties of shallow donor qubits in ZnO
Authors:
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Aswin Vishnuradhan,
Y. Kozuka,
Cameron Johnson,
M. Kawasaki,
Kai-Mei C. Fu
Abstract:
Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence pro…
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Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence properties. We find a longitudinal relaxation time T$_1$ exceeding 100 ms, an inhomogeneous dephasing time T$_2^*$ of $17\pm2$ ns, and a Hahn spin-echo time T$_2$ of $50\pm13$ $μ$s. The magnitude of T$_2^*$ is consistent with the inhomogeneity of the nuclear hyperfine field in natural ZnO. Possible mechanisms limiting T$_2$ include instantaneous diffusion and nuclear spin diffusion (spectral diffusion). These results are comparable to the phosphorous donor system in natural silicon, suggesting that with isotope and chemical purification long qubit coherence times can be obtained for donor spins in a direct band gap semiconductor. This work motivates further research on high-purity material growth, quantum device fabrication, and high-fidelity control of the donor:ZnO system for quantum technologies.
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Submitted 23 May, 2018; v1 submitted 9 February, 2018;
originally announced February 2018.
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Van der Waals Engineering of Ferromagnetic Semiconductor Heterostructures for Spin and Valleytronics
Authors:
Ding Zhong,
Kyle L. Seyler,
Xiayu Linpeng,
Ran Cheng,
Nikhil Sivadas,
Bevin Huang,
Emma Schmidgall,
Takashi Taniguchi,
Kenji Watanabe,
Michael A. McGuire,
Wang Yao,
Di Xiao,
Kai-Mei C. Fu,
Xiaodong Xu
Abstract:
The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley ps…
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The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photo-excited spins in WSe2 and the CrI3 magnetization, due to ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.
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Submitted 3 April, 2017;
originally announced April 2017.
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Magnetic field sensitivity and decoherence spectroscopy of an ensemble of narrow-linewidth nitrogen-vacancy centers close to a diamond surface
Authors:
Kento Sasaki,
Ed E. Kleinsasser,
Zhouyang Zhu,
Wen-Di Li,
Hideyuki Watanabe,
Kai-Mei C. Fu,
Kohei M. Itoh,
Eisuke Abe
Abstract:
We perform pulsed optically detected electron spin resonance to measure the DC magnetic field sensitivity and electronic spin coherence time T_2 of an ensemble of near-surface, high-density nitrogen-vacancy (NV) centers engineered to have a narrow magnetic resonance linewidth. Combining pulsed spectroscopy with dynamic nuclear polarization, we obtain the photon-shot-noise-limited DC magnetic sensi…
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We perform pulsed optically detected electron spin resonance to measure the DC magnetic field sensitivity and electronic spin coherence time T_2 of an ensemble of near-surface, high-density nitrogen-vacancy (NV) centers engineered to have a narrow magnetic resonance linewidth. Combining pulsed spectroscopy with dynamic nuclear polarization, we obtain the photon-shot-noise-limited DC magnetic sensitivity of 35 nT Hz^{-0.5}. We find that T_2 is controlled by instantaneous diffusion, enabling decoherence spectroscopy on residual nitrogen impurity spins in the diamond lattice and a quantitative determination of their density. The demonstrated high DC magnetic sensitivity and decoherence spectroscopy are expected to broaden the application range for two-dimensional magnetic imaging.
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Submitted 30 November, 2016;
originally announced December 2016.
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Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs
Authors:
Todd Karin,
Xiayu Linpeng,
Ashish K. Rai,
Arne Ludwig,
Andreas D. Wieck,
Kai-Mei C. Fu
Abstract:
Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act as strong non-radiative recombination centers, while others are efficient radiative recombination centers. We characterize luminescence bands in GaAs due to dislocations, stacking faults, and pairs of stacking faults. Th…
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Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act as strong non-radiative recombination centers, while others are efficient radiative recombination centers. We characterize luminescence bands in GaAs due to dislocations, stacking faults, and pairs of stacking faults. These results indicate that low-temperature, spatially-resolved photoluminescence imaging can be a powerful tool for identifying luminescence bands of extended defects. This mapping could then be used to identify extended defects in other GaAs samples solely based on low-temperature photoluminescence spectra.
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Submitted 10 June, 2016;
originally announced June 2016.
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Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform
Authors:
Michael Gould,
Emma R. Schmidgall,
Shabnam Dadgostar,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL pho…
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Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers.
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Submitted 15 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
Authors:
Todd Karin,
Xiayu Linpeng,
M. V. Durnev,
Russell Barbour,
M. M. Glazov,
E. Ya. Sherman,
Simon Watkins,
Satoru Seto,
Kai-Mei C. Fu
Abstract:
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$, $0.4~\text{ms}$ and $1.2~\text{ms}$, respectively. In GaAs and InP at low magnetic field, up to $\sim2~\text{T}$, the spin-relaxation mechanism is strongly density a…
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We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$, $0.4~\text{ms}$ and $1.2~\text{ms}$, respectively. In GaAs and InP at low magnetic field, up to $\sim2~\text{T}$, the spin-relaxation mechanism is strongly density and temperature dependent and is attributed to the random precession of the electron spin in hyperfine fields caused by the lattice nuclear spins. In all three semiconductors at high magnetic field, we observe a power-law dependence ${T_1 \propto B^{-ν}}$ with ${3\lesssim ν\lesssim 4}$. Our theory predicts that the direct spin-phonon interaction is important in all three materials in this regime in contrast to quantum dot structures. In addition, the "admixture" mechanism caused by Dresselhaus spin-orbit coupling combined with single-phonon processes has a comparable contribution in GaAs. We find excellent agreement between high-field theory and experiment for GaAs and CdTe with no free parameters, however a significant discrepancy exists for InP.
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Submitted 19 May, 2016;
originally announced May 2016.
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High density NV sensing surface created via He^(+) ion implantation of (12)^C diamond
Authors:
Ed E. Kleinsasser,
Matthew M. Stanfield,
Jannel K. Q. Banks,
Zhouyang Zhu,
Wen-Di Li,
Victor M. Acosta,
Hideyuki Watanabe,
Kohei M. Itoh,
Kai-Mei C. Fu
Abstract:
We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation…
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We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10^(17) cm^(-3) nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed spin resonance linewidth over 10 times more narrow. The 200 kHz linewidth is most likely limited by dipolar broadening indicating even further reduction of the linewidth is desirable and possible.
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Submitted 3 February, 2016;
originally announced February 2016.
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Giant permanent dipole moment of 2D excitons bound to a single stacking fault
Authors:
Todd Karin,
Xiayu Linpeng,
M. M. Glazov,
M. V. Durnev,
E. L. Ivchenko,
Sarah Harvey,
Ashish K. Rai,
Arne Ludwig,
Andreas D. Wieck,
Kai-Mei C. Fu
Abstract:
We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential lea…
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We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ${\lesssim 80~μ\text{eV} }$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (${\gtrsim e \cdot 10~\text{nm}}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.
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Submitted 6 June, 2016; v1 submitted 15 January, 2016;
originally announced January 2016.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
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Radiative properties of multi-carrier bound excitons in GaAs
Authors:
Todd Karin,
Russell Barbour,
Charles Santori,
Yoshihisa Yamamoto,
Yoshiro Hirayama,
Kai-Mei C. Fu
Abstract:
Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of ${k=0}$ excitons with an arbitrary number of charge carriers in d…
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Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of ${k=0}$ excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be ${T_o (1,3,3/4)}$ where ${T_o = (0.61 \pm 0.12) \text{ns}}$. Furthermore, we provide an estimate of the intra-level and inter-level exciton spin-relaxation rates.
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Submitted 5 November, 2014;
originally announced November 2014.
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Waveguide-integrated single-crystalline GaP resonators on diamond
Authors:
Nicole Thomas,
Russell J. Barbour,
Yuncheng Song,
Minjoo Larry Lee,
Kai-Mei C. Fu
Abstract:
Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP) resonator-waveguide coupled structures on diamond. We demonstrate coupling between 1 μm diameter GaP disk resonators and waveguides with a loaded Q factor of 3,800, and evaluate…
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Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP) resonator-waveguide coupled structures on diamond. We demonstrate coupling between 1 μm diameter GaP disk resonators and waveguides with a loaded Q factor of 3,800, and evaluate their potential for efficient photon collection if integrated with single photon emitters. This work opens a path toward scalable NV entanglement in the hybrid GaP/diamond platform, with the potential to integrate on-chip photon collection, switching, and detection for applications in quantum information processing.
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Submitted 23 April, 2014;
originally announced April 2014.
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Hybrid nanocavities for resonant enhancement of color center emission in diamond
Authors:
Paul E. Barclay,
Kai-Mei C. Fu,
Charles Santori,
Andrei Faraon,
Raymond G. Beausoleil
Abstract:
Resonantly enhanced emission from the zero phonon line of a diamond nitrogen-vacancy (NV) center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity. A 900 nm diameter ring nanocavity formed from gallium phosphide, whose sidewalls extend into a diamond substrate, is tuned onto resonance at low-temperature with the zero phonon line of a negativ…
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Resonantly enhanced emission from the zero phonon line of a diamond nitrogen-vacancy (NV) center in single crystal diamond is demonstrated experimentally using a hybrid whispering gallery mode nanocavity. A 900 nm diameter ring nanocavity formed from gallium phosphide, whose sidewalls extend into a diamond substrate, is tuned onto resonance at low-temperature with the zero phonon line of a negatively charged NV center implanted near the diamond surface. When the nanocavity is on resonance, the zero phonon line intensity is enhanced by approximately an order of magnitude, and the spontaneous emission lifetime of the NV is reduced as much as 18%, corresponding to a 6.3X enhancement of emission in the zero photon line.
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Submitted 25 May, 2011;
originally announced May 2011.
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Observation of the dynamic Jahn-Teller effect in the excited states of nitrogen-vacancy centers in diamond
Authors:
Kai-Mei C. Fu,
Charles Santori,
Paul E. Barclay,
Lachlan J. Rogers,
Neil B. Manson,
Raymond G. Beausoleil
Abstract:
The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant d…
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The optical transition linewidth and emission polarization of single nitrogen-vacancy (NV) centers are measured from 5 K to room temperature. Inter-excited state population relaxation is shown to broaden the zero-phonon line and both the relaxation and linewidth are found to follow a T^5 dependence for T up to 100 K. This dependence indicates that the dynamic Jahn-Teller effect is the dominant dephasing mechanism for the NV optical transitions at low temperatures.
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Submitted 17 December, 2009; v1 submitted 2 October, 2009;
originally announced October 2009.
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Chip-based microcavities coupled to NV centers in single crystal diamond
Authors:
Paul E. Barclay,
Kai-Mei C. Fu,
Charles Santori,
Raymond G. Beausoleil
Abstract:
Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000.
Optical coupling of nitrogen vacancy centers in single-crystal diamond to an on-chip microcavity is demonstrated. The microcavity is fabricated from a hybrid gallium phosphide and diamond material system, and supports whispering gallery mode resonances with spectrometer resolution limited Q > 25000.
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Submitted 14 August, 2009;
originally announced August 2009.
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Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing
Authors:
Charles Santori,
Paul E. Barclay,
Kai-Mei C. Fu,
Raymond G. Beausoleil
Abstract:
Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion…
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Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.
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Submitted 8 February, 2009; v1 submitted 19 December, 2008;
originally announced December 2008.
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Millisecond spin-flip times of donor-bound electrons in GaAs
Authors:
Kai-Mei C. Fu,
Wenzheng Yeo,
Susan Clark,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and me…
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We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.
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Submitted 18 October, 2006;
originally announced October 2006.
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Coherent Population Trapping of Electron Spins in a Semiconductor
Authors:
Kai-Mei C. Fu,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our dat…
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In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.
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Submitted 25 June, 2007; v1 submitted 31 March, 2005;
originally announced April 2005.
