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Showing 1–2 of 2 results for author: Ganeshan, V

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  1. arXiv:1609.06542  [pdf

    cond-mat.mtrl-sci

    Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators

    Authors: Abhishek Singh, Rahul Singh, A. Lakhani, T. Patel, G. S. Okram, V. Ganeshan, A. K. Ghosh, Sandip Chatterjee

    Abstract: Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and thermoelectric power measurements. Carrier mobility decreases with the doping of Cu which provides evidence of t… ▽ More

    Submitted 21 September, 2016; originally announced September 2016.

    Comments: 15 pages, 4 figures

  2. arXiv:0808.0420  [pdf

    cond-mat.mtrl-sci

    Study on dielectric behavior of Lithium Tantalate(LT) nano particle filled poly (vinylidene fluoride) (PVDF) nano composite

    Authors: S. Satapathy, P. K. Gupta, K. B. R. Varma, Pragya Tiwari, V. Ganeshan

    Abstract: For pyroelectric detector application materials should have low dielectric constant, high pyroelectric coefficient, large non volatile polarization at small applied electric field and low specific heat. Large field (greater than 1200kV/cm) is need to pole ferroelectric polymer poly (vinylidene fluoride) (PVDF) and it has low sensitivity compared to other pyroelectric materials. To increase non v… ▽ More

    Submitted 4 August, 2008; originally announced August 2008.

    Comments: Please send your comments(20 pages with figures)