Autonomous tuning and charge state detection of gate defined quantum dots
Authors:
J. Darulová,
S. J. Pauka,
N. Wiebe,
K. W. Chan,
G. C. Gardener,
M. J. Manfra,
M. C. Cassidy,
M. Troyer
Abstract:
Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning pr…
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Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning process which first determines whether devices are functional and then attempts to tune the functional devices to the single or double quantum dot regime. We show that automating well established manual tuning procedures and replacing the experimenter's decisions by supervised machine learning is sufficient to tune double quantum dots in multiple devices without pre-measured input or manual intervention. The quality of measurement results and charge states are assessed by four binary classifiers trained with experimental data, reflecting real device behaviour. We compare and optimize eight models and different data preprocessing techniques for each of the classifiers to achieve reliable autonomous tuning, an essential step towards scalable quantum systems in quantum dot based qubit architectures.
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Submitted 15 December, 2019; v1 submitted 25 November, 2019;
originally announced November 2019.
Hybridization of sub-gap states in one-dimensional superconductor/semiconductor Coulomb islands
Authors:
E. C. T. O'Farrell,
A. C. C. Drachmann,
M. Hell,
A. Fornieri,
A. M. Whiticar,
E. B. Hansen,
S. Gronin,
G. C. Gardener,
C. Thomas,
M. J. Manfra,
K. Flensberg,
C. M. Marcus,
F. Nichele
Abstract:
We present measurements of one-dimensional superconductor-semiconductor Coulomb islands, fabricated by gate confinement of a two-dimensional InAs heterostructure with an epitaxial Al layer. When tuned via electrostatic side gates to regimes without sub-gap states, Coulomb blockade reveals Cooper-pair mediated transport. When sub-gap states are present, Coulomb peak positions and heights oscillate…
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We present measurements of one-dimensional superconductor-semiconductor Coulomb islands, fabricated by gate confinement of a two-dimensional InAs heterostructure with an epitaxial Al layer. When tuned via electrostatic side gates to regimes without sub-gap states, Coulomb blockade reveals Cooper-pair mediated transport. When sub-gap states are present, Coulomb peak positions and heights oscillate in a correlated way with magnetic field and gate voltage, as predicted theoretically, with (anti) crossings in (parallel) transverse magnetic field indicating Rashba-type spin-orbit coupling. Overall results are consistent with a picture of overlapping Majorana zero modes in finite wires.
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Submitted 25 April, 2018;
originally announced April 2018.
