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Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes
Authors:
T. N. Tran Thi,
B. Fernandez,
D. Eon,
E. Gheeraert,
J. Hartwig,
T. A. Lafford,
A. Perrat-Mabilon,
C. Peaucelle,
P. Olivero,
E. Bustarret
Abstract:
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air)…
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A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O+ fluence of 2x10^17 cm^-2 was found to result in sub-nanometre roughness over tens of um^2.
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Submitted 25 August, 2016;
originally announced August 2016.
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Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond
Authors:
F. Picollo,
S. Rubanov,
C. Tomba,
A. Battiato,
E. Enrico,
A. Perrat-Mabilon,
C. Peaucelle,
T. N. Tran Thi,
L. Boarino,
E. Gheeraert,
P. Olivero
Abstract:
We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different e…
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We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different electron microscopy techniques. The main feature observed after laser irradiation is the thickening of the pre-existing graphitic layer. Cross sectional SEM imaging was performed to directly measure the thickness of the modified layers, and subsequent selective etching of the buried layers was employed to both assess their graphitic nature and enhance the SEM imaging contrast. In particular, it was found that for optimal irradiation parameters the laser processing induces a six-fold increase the thickness of sub superficial graphitic layers without inducing mechanical failures in the surrounding crystal. TEM microscopy and EELS spectroscopy allowed a detailed analysis of the internal structure of the laser irradiated layers, highlighting the presence of different nano graphitic and amorphous layers. The obtained results demonstrate the effectiveness and versatility of high-power laser irradiation for an accurate tuning of the geometrical and structural features of graphitic structures embedded in single crystal diamond, and open new opportunities in diamond fabrication.
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Submitted 25 August, 2016;
originally announced August 2016.
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High Field magnetospectroscopy to probe the 1.4eV Ni color center in diamond
Authors:
P. Plochocka,
O. Portugall,
P. Y. Solane,
E. Gheeraert,
L. Ranno,
E. Bustarret,
N. Bruyant,
I. Breslavetz,
D. K. Maude,
H. Kanda,
G. L. J. A. Rikken
Abstract:
A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin Hamiltonian of Nazaré, Nevers and Davies [Phys. Rev. B 43, 14196 (1991)] for interstitial Ni$^{+}$ with the electronic configuration $3d^{9}$ and effective spin $S=1/2$.…
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A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin Hamiltonian of Nazaré, Nevers and Davies [Phys. Rev. B 43, 14196 (1991)] for interstitial Ni$^{+}$ with the electronic configuration $3d^{9}$ and effective spin $S=1/2$. Our results unequivocally demonstrate the trigonal symmetry of the defect which preferentially aligns along the [111] growth direction on the (111) face, but reveal the shortcomings of the crystal field model for this particular defect.
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Submitted 5 March, 2012;
originally announced March 2012.
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Magneto-optical spectroscopy of (Ga,Mn)N epilayers
Authors:
Stéphane Marcet,
David Ferrand,
David Halley,
Shinji Kuroda,
Henri Mariette,
Etienne Gheeraert,
Francisco J. Teran,
Marcin L. Sadowski,
Rose-Marie Galéra,
Joël Cibert
Abstract:
We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal transitions allows a precise study of its Zeeman effect in both Faraday and Voigt configurations. We obtain a good agreement if we assume a dynamical Jahn-Te…
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We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal transitions allows a precise study of its Zeeman effect in both Faraday and Voigt configurations. We obtain a good agreement if we assume a dynamical Jahn-Teller effect in the 3d$^{4}$ configuration of Mn, and we determine the parameters of the effective Hamiltonians describing the $^{5}T\_{2}$ and $^{5}E$ levels, and those of the spin Hamiltonian in the ground spin multiplet, from which the magnetization of the isolated ion can be calculated. On layers grown on transparent substrates, transmission close to the band gap, and the associated magnetic circular dichroism, reveal the presence of the giant Zeeman effect resulting from exchange interactions between the Mn$^{3+}$ ions and the carriers. The spin-hole interaction is found to be ferromagnetic.
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Submitted 2 April, 2006;
originally announced April 2006.
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Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films
Authors:
Etienne Bustarret,
Jozef Kacmarcik,
Christophe Marcenat,
Etienne Gheeraert,
Catherine Cytermann,
Jacques Marcus,
Thierry Klein
Abstract:
Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity is about 5-7 10^20 /cm3, close to the metal-insulator transition. The H-T phase diagram has been obtained from transport and…
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Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity is about 5-7 10^20 /cm3, close to the metal-insulator transition. The H-T phase diagram has been obtained from transport and a.c. susceptibility measurements down to 300mK. These results bring new quantitative constraints on the theoretical models proposed for superconductivity in diamond.
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Submitted 24 August, 2004;
originally announced August 2004.
