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Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization
Authors:
Parth Garud,
Kiumars Aryana,
Cosmin Constantin Popescu,
Steven Vitale,
Rashi Sharma,
Kathleen Richardson,
Tian Gu,
Juejun Hu,
Hyun Jung Kim
Abstract:
Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications including…
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Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications including sensing, imaging, telecommunications, and data storage. Chalcogenide-based phase change materials (PCMs) have shown great promise due to their stable, non-volatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. In this paper, we report on the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching, extending the operational lifetime of the device beyond 13,000 switching events. To achieve this, we have developed a computer-aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process, thereby significantly enhancing the lifetime of these reconfigurable devices. Our findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.
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Submitted 22 April, 2024;
originally announced April 2024.
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An Open-Source Multi-functional Testing Platform for Optical Phase Change Materials
Authors:
Cosmin-Constantin Popescu,
Khoi Phuong Dao,
Luigi Ranno,
Brian Mills,
Louis Martin,
Yifei Zhang,
David Bono. Brian Neltner,
Tian Gu,
Juejun Hu,
Kiumars Aryana,
William M. Humphreys,
Hyun Jung Kim,
Steven Vitale,
Paul Miller,
Christopher Roberts,
Sarah Geiger,
Dennis Callahan,
Michael Moebius,
Myungkoo Kang,
Kathleen Richardson,
Carlos A. Ríos Ocampo
Abstract:
Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. In this article, we introduce a multi-functional silicon microheater platform capable of in situ mea…
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Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. In this article, we introduce a multi-functional silicon microheater platform capable of in situ measurement of structural, kinetic, optical, and thermal properties of these materials. The platform can be fabricated leveraging industry-standard silicon foundry manufacturing processes. We fully open-sourced this platform, including complete hardware design and associated software codes.
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Submitted 12 July, 2023;
originally announced July 2023.
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Multi-scale plasticity homogenization of Sn-3Ag-0.5Cu: from β-Sn micropillars to polycrystals with intermetallics
Authors:
Yilun Xu,
Tianhong Gu,
Jingwei Xian,
Finn Giuliani,
T. Ben Britton,
Christopher M. Gourlay,
Fionn P. E. Dunne
Abstract:
The mechanical properties of $β$-Sn single crystals have been systematically investigated using a combined methodology of micropillar tests and rate-dependent crystal plasticity modelling. The slip strength and rate sensitivity of several key slip systems within $β$-Sn single crystals have been determined. Consistency between the numerically predicted and experimentally observed slip traces has be…
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The mechanical properties of $β$-Sn single crystals have been systematically investigated using a combined methodology of micropillar tests and rate-dependent crystal plasticity modelling. The slip strength and rate sensitivity of several key slip systems within $β$-Sn single crystals have been determined. Consistency between the numerically predicted and experimentally observed slip traces has been shown for pillars oriented to activate single and double slip. Subsequently, the temperature-dependent, intermetallic-size-governing behaviour of a polycrystal $β$-Sn-rich alloy SAC305 (96.5Sn-3Ag-0.5Cu wt%) is predicted through a multi-scale homogenization approach, and the predicted temperature- and rate-sensitivity reproduce independent experimental results. The integrated experimental and numerical approaches provide mechanistic understanding and fundamental material properties of microstructure-sensitive behaviour of electronic solders subject to thermomechanical loading, including thermal fatigue.
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Submitted 24 August, 2022;
originally announced August 2022.
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Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials
Authors:
Carlos Ríos,
Qingyang Du,
Yifei Zhang,
Cosmin-Constantin Popescu,
Mikhail Y. Shalaginov,
Paul Miller,
Christopher Roberts,
Myungkoo Kang,
Kathleen A. Richardson,
Tian Gu,
Steven A. Vitale,
Juejun Hu
Abstract:
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state…
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Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable PICs. Thus far, carrier modulation and thermo-optical effect are the chosen phenomena for ultrafast and low-loss phase shifters, respectively; however, the state and information they carry are lost once the power is turned off-they are volatile. The volatility not only compromises energy efficiency due to their demand for constant power supply, but also precludes them from emerging applications such as in-memory computing. To circumvent this limitation, we introduce a novel phase shifting mechanism that exploits the nonvolatile refractive index modulation upon structural phase transition of Sb$_{2}$Se$_{3}$, a bi-stable transparent phase change material. A zero-static power and electrically-driven phase shifter was realized on a foundry-processed silicon-on-insulator platform, featuring record phase modulation up to 0.09 $π$/$μ$m and a low insertion loss of 0.3 dB/$π$, which can be further improved upon streamlined design. We also pioneered a one-step partial amorphization scheme to enhance the speed and energy efficiency of PCM devices. A diverse cohort of programmable photonic devices were demonstrated based on the ultra-compact PCM phase shifter.
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Submitted 21 March, 2022; v1 submitted 12 May, 2021;
originally announced May 2021.
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Accessing slip activity in high purity tin with electron backscatter diffraction and measurement of slip strength
Authors:
Tianhong Gu,
Finn Giuliani,
T. Ben Britton
Abstract:
Beta-tin has been used widely as an interconnect in modern electronics. To improve the understanding of the reliability of these components, we directly measure the critical resolved shear stress of individual slip systems in beta-tin using micropillar compression tests at room temperature with crystal orientations near-[100] and [001] in the loading direction within a large grain high purity tin…
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Beta-tin has been used widely as an interconnect in modern electronics. To improve the understanding of the reliability of these components, we directly measure the critical resolved shear stress of individual slip systems in beta-tin using micropillar compression tests at room temperature with crystal orientations near-[100] and [001] in the loading direction within a large grain high purity tin (99.99%) sample. This activates the (110)[1-11]/2, (110)[1-1-1]/2, (010)[001] and (110)[001] slip systems. Analysis of the slip traces and load-displacement curves enables measurement of the critical resolved shear stress for epsilon=10^(-4) of tau_(CRSS)^({110}<1-11>/2)=10.4+/-0.4 and tau_(CRSS)^({010}<001>)=3.9+/-0.3 MPa.
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Submitted 20 October, 2023; v1 submitted 6 April, 2021;
originally announced April 2021.
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Tunable spin textures in polar antiferromagnetic hybrid organic inorganic perovskites by electric and magnetic fields
Authors:
Feng Lou,
Teng Gu,
Junyi Ji,
Junsheng Feng,
Hongjun Xiang,
Alessandro Stroppa
Abstract:
The hybrid organic inorganic perovskites (HOIPs) have attracted much attention for their potential applications as novel optoelectronic devices. Remarkably, the Rashba band splitting, together with specific spin orientations in k space (i.e., spin texture), has been found to be relevant for the optoelectronic performances. In this work, by using first principles calculations and symmetry analyses,…
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The hybrid organic inorganic perovskites (HOIPs) have attracted much attention for their potential applications as novel optoelectronic devices. Remarkably, the Rashba band splitting, together with specific spin orientations in k space (i.e., spin texture), has been found to be relevant for the optoelectronic performances. In this work, by using first principles calculations and symmetry analyses, we study the electric polarization, magnetism, and spin texture properties of the antiferromagnetic (AFM) HOIP ferroelectric TMCM_MnCl3 (TMCM = (CH3)3NCH2Cl, trimethylchloromethyl ammonium). This recently synthesized compound is a prototype of order disorder and displacement-type ferroelectric with a large piezoelectric response, high ferroelectric transition temperature, and excellent photoluminescence properties [You et al., Science 357, 306 (2017)]. The most interesting result is that the inversion symmetry breaking coupled to the spin orbit coupling gives rise to a Rashba-like band splitting and a related robust persistent spin texture (PST) and/or typical spiral spin texture, which can be manipulated by tuning the ferroelectric or, surprisingly, also by the AFM magnetic order parameter. The tunability of spin texture upon switching of AFM order parameter is largely unexplored and our findings not only provide a platform to understand the physics of AFM spin texture but also support the AFM HOIP ferroelectrics as a promising class of optoelectronic materials.
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Submitted 20 July, 2020;
originally announced July 2020.
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The role of lengthscale in the creep of Sn-3Ag-0.5Cu solder microstructures
Authors:
Tianhong Gu,
Christopher M. Gourlay,
T. Ben Britton
Abstract:
Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near-<110> orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of temperatures. The creep performance improves by refining the microstructure, i.e. the decrease in secondary dendrite arm spacing (λ2), eutectic intermetallic spaci…
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Creep of directionally solidified Sn-3Ag-0.5Cu wt.% (SAC305) samples with near-<110> orientation along the loading direction and different microstructural lengthscale is investigated under constant load tensile testing and at a range of temperatures. The creep performance improves by refining the microstructure, i.e. the decrease in secondary dendrite arm spacing (λ2), eutectic intermetallic spacing (λe) and intermetallic compound (IMC) size, indicating as a longer creep lifetime, lower creep strain rate, change in activation energy (Q) and increase in ductility and homogeneity in macro- and micro-structural deformation of the samples. The dominating creep mechanism is obstacle-controlled dislocation creep at room temperature and transits to lattice-associated vacancy diffusion creep at elevated temperature (T/T_M > 0.7 to 0.75). The deformation mechanisms are investigated using electron backscatter diffraction (EBSD) and strain heterogeneity is identified between b/-Sn in dendrites and b/-Sn in eutectic regions containing Ag3Sn and Cu6Sn5 particles. The size of the recrystallised grains is modulated by the dendritic and eutectic spacings, however, the recrystalised grains in the eutectic regions for coarse-scaled samples (largest λ2 and λe) is only localised next to IMCs without growth in size.
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Submitted 10 December, 2020; v1 submitted 16 July, 2020;
originally announced July 2020.
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In-situ study of creep in Sn-3Ag-0.5Cu solder
Authors:
Tianhong Gu,
Vivian Tong,
Christopher M. Gourlay,
T. Ben Britton
Abstract:
The creep behaviour and microstructural evolution of a Sn-3Ag-0.5Cu wt.% sample with a columnar microstructure have been investigated through in-situ creep testing under constant stress of 30 MPa at 298 K. This is important, as 298 K is high temperature within the solder system and in-situ observations of microstructure evolutions confirm the mechanisms involved in deformation and ultimately failu…
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The creep behaviour and microstructural evolution of a Sn-3Ag-0.5Cu wt.% sample with a columnar microstructure have been investigated through in-situ creep testing under constant stress of 30 MPa at 298 K. This is important, as 298 K is high temperature within the solder system and in-situ observations of microstructure evolutions confirm the mechanisms involved in deformation and ultimately failure of the material. The sample has been observed in-situ using repeat and automatic forescatter diode and auto electron backscatter diffraction imaging. During deformation, polygonisation and recrystallisation are observed heterogeneously with increasing strain, and these correlate with local lattice rotations near matrix-intermetallic compound interfaces. Recrystallised grains have either twin or special boundary relationships to their parent grains. The combination of these two imaging methods reveal one grain (loading direction, LD, 10.4 ° from [100]) deforms less than the neighbour grain 2 (LD 18.8° from [110]), with slip traces in the strain localised regions. In grain 1, (1-10)[001] slip system are observed and in grain 2, (1-10)[-1-11]/2 and (110)[-111]/2 slip systems are observed. Lattice orientation gradients build up with increasing plastic strain and near fracture recrystallisation is observed concurrent with fracture.
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Submitted 7 June, 2020;
originally announced June 2020.
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Light emission from self-assembled and laser-crystallized chalcogenide metasurface
Authors:
Feifan Wang,
Zi Wang,
Dun Mao,
Mingkun Chen,
Qiu Li,
Thomas Kananen,
Dustin Fang,
Anishkumar Soman,
Xiaoyong Hu,
Craig B. Arnold,
Tingyi Gu
Abstract:
Subwavelength periodic confinement can collectively and selectively enhance local light intensity and enable control over the photo-induced phase transformations at the nanometer scale. Standard nanofabrication process can result in geometrical and compositional inhomogeneities in optical phase change materials, especially chalcogenides, as those materials exhibit poor chemical and thermal stabili…
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Subwavelength periodic confinement can collectively and selectively enhance local light intensity and enable control over the photo-induced phase transformations at the nanometer scale. Standard nanofabrication process can result in geometrical and compositional inhomogeneities in optical phase change materials, especially chalcogenides, as those materials exhibit poor chemical and thermal stability. Here we demonstrate the self-assembled planar chalcogenide nanostructured array with resonance enhanced light emission to create an all-dielectric optical metasurface, by taking advantage of the fluid properties associated with solution processed films. A patterned silicon membrane serves as a template for shaping the chalcogenide metasurface structure. Solution-processed arsenic sulfide metasurface structures are self-assembled in the suspended 250 nm silicon membrane templates. The periodic nanostructure dramatically manifests the local light-matter interaction such as absorption of incident photons, Raman emission, and photoluminescence. Also, the thermal distribution is modified by the boundaries and thus the photo-thermal crystallization process, leading to the formation of anisotropic nano-emitters within the field enhancement area. This hybrid structure shows wavelength selective anisotropic photoluminescence, which is a characteristic behavior of the collective response of the resonant guided modes in a periodic nanostructure. The resonance enhanced Purcell effect could manifest the quantum efficiency of localized light emission.
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Submitted 9 January, 2020;
originally announced January 2020.
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In-situ electron backscatter diffraction of thermal cycling in a single grain Cu/Sn-3Ag-0.5Cu/Cu solder joint
Authors:
Tianhong Gu,
Christopher M. Gourlay,
T. Ben Britton
Abstract:
The heterogeneous evolution of microstructure in a single Cu/SAC305/Cu solder joint is investigated using in-situ thermal cycling combined with electron backscatter diffraction (EBSD). Local deformation due to thermal expansion mismatch results in heterogeneous lattice rotation, localised towards the corners of the joint and decreases towards the centre of the joint. This deformation is induced by…
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The heterogeneous evolution of microstructure in a single Cu/SAC305/Cu solder joint is investigated using in-situ thermal cycling combined with electron backscatter diffraction (EBSD). Local deformation due to thermal expansion mismatch results in heterogeneous lattice rotation, localised towards the corners of the joint and decreases towards the centre of the joint. This deformation is induced by the constraint from the CTE between the \b{eta}-Sn, Cu6Sn5 and Cu at interfaces. The formation of subgrains with continuous increase in misorientation is revealed during deformation, implying the accumulation of plastic slip at the strain-localised regions and the activation of slip systems (1-10)[111]/2 and (11-0)[111]/2.
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Submitted 29 August, 2019; v1 submitted 15 July, 2019;
originally announced August 2019.
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Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics
Authors:
Yifei Zhang,
Jeffrey B. Chou,
Junying Li,
Huashan Li,
Qingyang Du,
Anupama Yadav,
Si Zhou,
Mikhail Y. Shalaginov,
Zhuoran Fang,
Huikai Zhong,
Christopher Roberts,
Paul Robinson,
Bridget Bohlin,
Carlos Ríos,
Hongtao Lin,
Myungkoo Kang,
Tian Gu,
Jamie Warner,
Vladimir Liberman,
Kathleen Richardson,
Juejun Hu
Abstract:
Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index…
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Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics, reflective display, and optical neuromorphic computers. Current phase change materials, such as Ge-Sb-Te (GST), exhibit large contrast of both refractive index (delta n) and optical loss (delta k), simultaneously. The coupling of both optical properties fundamentally limits the function and performance of many potential applications. In this article, we introduce a new class of O-PCMs, Ge-Sb-Se-Te (GSST) which breaks this traditional coupling, as demonstrated with an optical figure of merit improvement of more than two orders of magnitude. The first-principle computationally optimized alloy, Ge2Sb2Se4Te1, combines broadband low optical loss (1-18.5 micron), large optical contrast (delta n = 2.0), and significantly improved glass forming ability, enabling an entirely new field of infrared and thermal photonic devices. We further leverage the material to demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio, as well as an electrically addressed, microsecond switched pixel level spatial light modulator, thereby validating its promise as a platform material for scalable nonvolatile photonics.
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Submitted 5 November, 2018; v1 submitted 1 November, 2018;
originally announced November 2018.
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Soft antiphase tilt of oxygen octahedra in the hybrid improper multiferroic Ca3Mn1.9Ti0.1O7
Authors:
Feng Ye,
Jinchen Wang,
Jieming Sheng,
C. Hoffmann,
T. Gu,
H. J. Xiang,
Wei Tian,
J. J. Molaison,
A. M. dos Santos,
M. Matsuda,
B. C. Chakoumakos,
J. A. Fernandez-Baca,
X. Tong,
Bin Gao,
Jae Wook Kim,
S. -W. Cheong
Abstract:
We report a single crystal neutron and x-ray diffraction study of the hybrid improper multiferroic Ca3Mn1.9Ti0.1O7 (CMTO), a prototypical system where the electric polarization arises from the condensation of two lattice distortion modes.With increasing temperature (T ), the out-of-plane, antiphase tilt of MnO6 decreases in amplitude while the in-plane, in-phase rotation remains robust and experie…
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We report a single crystal neutron and x-ray diffraction study of the hybrid improper multiferroic Ca3Mn1.9Ti0.1O7 (CMTO), a prototypical system where the electric polarization arises from the condensation of two lattice distortion modes.With increasing temperature (T ), the out-of-plane, antiphase tilt of MnO6 decreases in amplitude while the in-plane, in-phase rotation remains robust and experiences abrupt changes across the first-order structural transition. Application of hydrostatic pressure (P) to CMTO at room temperature shows a similar effect. The consistent behavior under both T and P reveals the softness of antiphase tilt and highlights the role of the partially occupied d orbital of the transition-metal ions in determining the stability of the octahedral distortion. Polarized neutron analysis indicates the symmetry-allowed canted ferromagnetic moment is less than the 0.04 μB/Mn site, despite a substantial out-of-plane tilt of the MnO6 octahedra.
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Submitted 19 January, 2018;
originally announced January 2018.
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Cooperative Couplings between Octahedral Rotations and Ferroelectricity in Perovskites
Authors:
Teng Gu,
Timothy Scarbrough,
Yurong Yang,
Jorge Íñiguez,
L. Bellaiche,
H. J. Xiang
Abstract:
The structure of ABO3 perovskites is dominated by two types of unstable modes, namely, the oxygen octahedral rotation (AFD) and ferroelectric (FE) mode. It is generally believed that such AFD and FE modes tend to compete and suppress each other. Here we use first-principles methods to show that a dual nature of the AFD-FE coupling, which turns from competitive to cooperative as the AFD mode streng…
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The structure of ABO3 perovskites is dominated by two types of unstable modes, namely, the oxygen octahedral rotation (AFD) and ferroelectric (FE) mode. It is generally believed that such AFD and FE modes tend to compete and suppress each other. Here we use first-principles methods to show that a dual nature of the AFD-FE coupling, which turns from competitive to cooperative as the AFD mode strengthens, occurs in numerous perovskite oxides. We provide a unified model of such a dual interaction by introducing novel high-order coupling terms, and explain the atomistic origin of the resulting new form of ferroelectricity in terms of universal steric mechanisms. We also predict that such a novel form of ferroelectricity leads to atypical behaviors, such as an enhancement of the electric polarization under hydrostatic pressure.
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Submitted 18 October, 2017;
originally announced October 2017.
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Chalcogenide Glass-on-Graphene Photonics
Authors:
Hongtao Lin,
Yi Song,
Yizhong Huang,
Derek Kita,
Kaiqi Wang,
Lan Li,
Junying Li,
Hanyu Zheng,
Skylar Deckoff-Jones,
Zhengqian Luo,
Haozhe Wang,
Spencer Novak,
Anupama Yadav,
Chung-Che Huang,
Tian Gu,
Daniel Hewak,
Kathleen Richardson,
Jing Kong,
Juejun Hu
Abstract:
Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D mate…
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Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators.
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Submitted 5 March, 2017;
originally announced March 2017.
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Multiscale modeling of the elastic behavior of architectured and nanostructured Cu-Nb composite wires
Authors:
T. Gu,
O. Castelnau,
S. Forest,
E. Hervé-Luanco,
F. Lecouturier,
H. Proudhon,
L. Thilly
Abstract:
Nanostructured and architectured copper niobium composite wires are excellent candidates for the generation of intense pulsed magnetic fields (>90T) as they combine both high strength and high electrical conductivity. Multi-scaled Cu-Nb wires are fabricated by accumulative drawing and bundling (a severe plastic deformation technique), leading to a multiscale, architectured, and nanostructured micr…
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Nanostructured and architectured copper niobium composite wires are excellent candidates for the generation of intense pulsed magnetic fields (>90T) as they combine both high strength and high electrical conductivity. Multi-scaled Cu-Nb wires are fabricated by accumulative drawing and bundling (a severe plastic deformation technique), leading to a multiscale, architectured, and nanostructured microstructure exhibiting a strong fiber crystallographic texture and elongated grain shapes along the wire axis. This paper presents a comprehensive study of the effective elastic behavior of this composite material by three multi-scale models accounting for different microstructural contents: two mean-field models and a full-field finite element model. As the specimens exhibit many characteristic scales, several scale transition steps are carried out iteratively from the grain scale to the macro-scale. The general agreement among the model responses allows suggesting the best strategy to estimate the effective behavior of Cu-Nb wires and save computational time. The importance of crystallographical and morphological textures in various cases is discussed. Finally, the models are validated by available experimental data with a good agreement.
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Submitted 3 August, 2017; v1 submitted 19 December, 2016;
originally announced December 2016.
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Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser
Authors:
Tingyi Gu,
Hyuncheol Jeong,
Kengran Yang,
Fan Wu,
Nan Yao,
Rodney D. Priestley,
Claire E. White,
Craig B. Arnold
Abstract:
The low activation energy associated with amorphous chalcogenide structures offers broad tunability of material properties with laser-based or thermal processing. In this paper, we study near-bandgap laser induced anisotropic crystallization in solution processed arsenic sulfide. The modified electronic bandtail states associated with laser irritation lead to a distinctive photoluminescence spectr…
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The low activation energy associated with amorphous chalcogenide structures offers broad tunability of material properties with laser-based or thermal processing. In this paper, we study near-bandgap laser induced anisotropic crystallization in solution processed arsenic sulfide. The modified electronic bandtail states associated with laser irritation lead to a distinctive photoluminescence spectrum, compared to thermally annealed amorphous glass. Laser crystalized materials exhibit a periodic subwavelength ripples structure in transmission electron microscopy experiments and show polarization dependent photoluminescence. Analysis of the local atomic structure of these materials using laboratory-based X-ray pair distribution function analysis indicates that laser irradiation causes a slight rearrangement at the atomic length scale, with a small percentage of S-S homopolar bonds converting to As-S heteropolar bonds. These results highlight fundamental differences between laser and thermal processing in this important class of materials.
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Submitted 12 December, 2016;
originally announced December 2016.
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Room-temperature chiral charge pumping in Dirac semimetals
Authors:
Cheng Zhang,
Enze Zhang,
Weiyi Wang,
Yanwen Liu,
Zhi-Gang Chen,
Shiheng Lu,
Sihang Liang,
Junzhi Cao,
Xiang Yuan,
Lei Tang,
Qian Li,
Chao Zhou,
Teng Gu,
Yizheng Wu,
Jin Zou,
Faxian Xiu
Abstract:
Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusio…
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Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusion in Cd3As2. Apart from the conventional negative magnetoresistance, we observe an unusual nonlocal response with negative field dependence up to room temperature, originating from the diffusion of valley polarization. Furthermore, a large magneto-optic Kerr effect generated by parallel electric and magnetic fields is detected. These new experimental approaches provide a quantitative analysis of the chiral anomaly phenomenon which is inaccessible previously. The ability to manipulate the valley polarization in topological semimetal at room temperature opens up a brand-new route towards understanding its fundamental properties and utilizing the chiral fermions.
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Submitted 1 November, 2016; v1 submitted 28 April, 2015;
originally announced April 2015.
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Regenerative oscillation and four-wave mixing in graphene optoelectronics
Authors:
Tingyi Gu,
Nick Petrone,
James F. McMillian,
Arend van der Zande,
Mingbin Yu,
Guo-Qiang Lo,
Dim-Lee Kwong,
James Hone,
Chee-Wei Wong
Abstract:
The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow pow…
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The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-frequency optoelectronics, and all-optical signal processing.
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Submitted 26 June, 2012; v1 submitted 19 May, 2012;
originally announced May 2012.
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Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells
Authors:
Tingyi Gu,
Mohamed A. El-Emawy,
Kai Yang,
Andreas Stintz,
Luke F. Lester
Abstract:
The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit volt…
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The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells.
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Submitted 11 February, 2011;
originally announced February 2011.