Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te
Authors:
L. Chen,
L. Q. Zhou,
Y. Zhou,
C. Liu,
Z. N. Guo,
S. Y. Gao,
W. H. Fan,
J. F. Xu,
Y. X. Guo,
K,
Liao,
J. O. Wang,
H. M. Weng,
G. Wang
Abstract:
Looking for new materials with Dirac points has been a fascinating subject of research. Here we report the growth, crystal structure, and band structure of HfGe0.92Te single crystals, featuring three different types of Dirac points. HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No. 129), having square Ge-atom plane with vacancies about 8%. Despite the vacancies on Ge sit…
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Looking for new materials with Dirac points has been a fascinating subject of research. Here we report the growth, crystal structure, and band structure of HfGe0.92Te single crystals, featuring three different types of Dirac points. HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No. 129), having square Ge-atom plane with vacancies about 8%. Despite the vacancies on Ge site, the Dirac nodal line composed of conventional Dirac points vulnerable to spin-orbit coupling (SOC) is observed using angle-resolved photoemission spectroscopy, accompanied with the robust Dirac line protected by the nonsymmorphic symmetry against both SOC and vacancies. Specially, spin-orbit Dirac points (SDPs) originated from the surface formed under SOC are hinted to exist according to our experiments and calculations. Quasi-two-dimensional (quasi-2D) characters are observed and further confirmed by angular-resolved magnetoresistance. HfGe0.92Te is a good candidate to explore exotic topological phases or topological properties with three different types of Dirac points and a promising candidate to realize 2D SDPs.
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Submitted 15 January, 2022;
originally announced January 2022.
